CN104867995B - Two-dimensional Cosine wavy surface light trapping structure and the solar film battery based on this structure - Google Patents
Two-dimensional Cosine wavy surface light trapping structure and the solar film battery based on this structure Download PDFInfo
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- CN104867995B CN104867995B CN201510201982.5A CN201510201982A CN104867995B CN 104867995 B CN104867995 B CN 104867995B CN 201510201982 A CN201510201982 A CN 201510201982A CN 104867995 B CN104867995 B CN 104867995B
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- light trapping
- trapping structure
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Abstract
The invention discloses a kind of Two-dimensional Cosine wavy surface light trapping structure and the solar film battery based on this structure, including battery obsorbing layer, the top and bottom of battery obsorbing layer are respectively provided with the light trapping structure of cosine waveform.Periodic two-dimensional cosine waveform face proposed by the present invention light trapping structure can be had the ability absorption efficiency to be advanced to theoretical limit, thus battery conversion efficiency is greatly improved with numerical optimization.Simultaneously, periodic two-dimensional cosine waveform face light trapping structure is more practical on making than existing light trapping structure, its face type can be prepared by the method for simple two-beam interference photoetching, and it is big to shape area, and the area in existing light trapping structure preparation method can be overcome to be restricted, structural disorder the shortcomings of.
Description
Technical field
The present invention relates to new cleaning fuel and micro-nano photonics, it is specifically related to a kind of Two-dimensional Cosine wavy surface and falls into
Photo structure and the solar film battery based on this structure.
Background technology
The world today, the increasingly size of population being incremented by and quick economic development have resulted in the deficient of global conventional energy resource
The weary heavy damage with ecological environment.Therefore, as natural, renewable free of contamination new forms of energy cause the whole world to solar energy
The extensive concern of researcher.Wherein, solaode luminous energy being directly changed into the electric energy of cleaning is most important one
Item innovation and application.Silicon materials are in the rich content of nature, and do not have any murder by poisoning to human body, in solar cell application material
It is in absolute dominant position in material, account for the share in market more than 98%.The silica-based solar cell of film type is prepared because of it
Process is simple, material consumption is few, and the low advantage of energy consumption has become current study hotspot.The cost of silicon-based film solar cells
Although very low, however as solaode absorber thickness reduce when, battery is just faced with a less efficient difficult problem, typically
Less than 10% it is therefore desirable to extend propagation path in battery structure for the light to increase its effective light using nanometer light trapping structure
Journey, reaches and strengthens the purpose absorbing, thus improving electricity conversion.
At present, in order to improve the efficiency of silicon-based film solar cells, research worker has been proposed for a variety of nanometers and falls into
Photo structure, such as nano wire, inverted pyramid, nanometer circular cone, nano-pore etc..2010, U.S. Peidong Yang et al. was in thickness
Method for utilizing self assembly on 8 μm of silicon absorbed layer makes orderly nano-wire array, and result of study shows such nanometer
The light path of incident illumination can be increased to original 73 times by linear array, be far longer than unordered scattering object limit 4n2(～50).So
And, the preparation method of self assembly is generally limited by area it is impossible to prepare large-area orderly nanostructured.2013,
M.Foldyna et al. can also prepare nano thread structure by VLS growth mechanism, but the nanometer battle array that the method is formed
Row are mostly to be unordered.2012, Gang Chen et al. used the method for wet etching in the silica-based solar cell of 5 μ m-thick
Prepare inverted pyramid structure, and reach 37.1mA/cm2Short-circuit current density.But, wet etching obtains the side of preparation
Method will also tend to form structure unordered in a jumble.Although unordered light trapping structure can obtain to absorb in wide spectral range and increase at random
Long, but be difficult to because structural arrangement is unordered maximize enhancing absorption.In order that nanostructured arrangement is in good order, they
The method being combined using mask lithography and wet etching, but this method is also only applicable to monocrystaline silicon solar cell.
Content of the invention
For above-mentioned prior art shortcoming, the present invention provides a kind of novel cycle Two-dimensional Cosine wavy surface light trapping structure.
This structure not only has the advantages that periodicity face type couples to strengthen wide spectrum absorption efficiency, and can pass through simply double light
Beam interferometer photoetching preparation method obtains large area resulting structure so that thin-film solar cells obtain high absorption, to be carried with this
The conversion efficiency of high solar battery.
The present invention adopts the following technical scheme that：Periodic two-dimensional cosine waveform face for silicon-based film solar cells falls into
Photo structure, including battery obsorbing layer, the top and bottom of battery obsorbing layer are respectively provided with the light trapping structure of cosine waveform.
Further, light trapping structure carries out vertical exposure acquisition twice by two-beam interference.
Further, the formula that described two-beam interference is exposed is I (x)=2I0[1+cos (2 π x/d)], wherein I0
For exposure intensity, d is fringe period, and I (x) is exposure height.
A kind of silicon-based film solar cells with periodic two-dimensional cosine waveform face light trapping structure, from top to bottom successively
For metal electrode, transparent conductive oxide film, silicon absorbed layer, transparent conductive oxide film, described silicon absorbed layer upper and lower
Face is respectively provided with the light trapping structure of cosine waveform.
The preparation method of the silicon-based film solar cells in the present invention, its step is as follows：In the substrate of metal electrode
Deposition transparent conductive oxide, with the light trapping structure of two-beam interference photoetching making cosine waveform, then pass sequentially through deposition and
Doping makes silicon absorbed layer PN junction, finally deposits upper transparent conductive oxide.
Because the method for two-beam interference can form cosine face type, with mathematical formulae I (x)=2I0[1+cos(2πx/
D)] describing, wherein I0For exposure intensity, d is fringe period, I0Determine the height of light trapping structure, fall into light by optimizing
The cycle of structure and height make solaode obtain maximum absorption effect thus finding the cosine surface structure of optimum.
Compared with prior art, the invention has the advantages that：
First, the periodic two-dimensional structure that light trapping structure proposed by the present invention is ordered into, has stronger coupled characteristic, has
The good feature of wide spectrum influx and translocation, angle sensitivity, influx and translocation effect is suitable with traditional isostructural effect of inverted pyramid；
2nd, this light trapping structure directly can be prepared by simple two-beam interference photoetching method, shapes area big, no
Limited by absorbing layer material.
Brief description
Fig. 1 is the structural profile schematic diagram of the present invention；
Fig. 2 is the schematic three dimensional views of the structure signal period of the present invention；
Fig. 3 is the short-circuit current density of different cycles and height；
Fig. 4 is the absorption spectrum in vertical incidence for the battery in example one；
Fig. 5 be example one in battery with angle change absorption spectrum.
Specific embodiment
Below in conjunction with the drawings and the specific embodiments, the invention will be further described.
For the periodic two-dimensional cosine waveform face light trapping structure of silicon-based film solar cells, including battery obsorbing layer,
The top and bottom of battery obsorbing layer are respectively provided with the light trapping structure of cosine waveform.
A kind of silicon-based film solar cells with periodic two-dimensional cosine waveform face light trapping structure, from top to bottom successively
For metal electrode, transparent conductive oxide film, silicon absorbed layer, transparent conductive oxide film, described silicon absorbed layer upper and lower
Face is respectively provided with the light trapping structure of cosine waveform.
The preparation method of the silicon-based film solar cells in the present invention, its step is as follows：In the substrate of metal electrode
Deposition transparent conductive oxide, makes the light trapping structure of cosine waveform, be then sequentially depositing and adulterate making silicon of interference lithography
Absorbed layer PN junction, then the light trapping structure of cosine waveform is made of interference lithography, finally deposit upper transparent conductive oxide.
The influx and translocation effect of periodic two-dimensional cosine waveform face light trapping structure can be according to short circuit electricity during vertical incidence
Current density JscTo assess, its expression formula is as follows：
Wherein q is the quantity of electric charge, and λ is lambda1-wavelength, and h is planck constant, and c is the light velocity, IAM1.5G(λ) for AM1.5G too
Solar spectrum radiates, and A (λ) is the absorption spectrum of battery, and it is closely related with photon structure, the absorption spectrum A (λ) of battery during calculating
To launch in the solar spectrum of 300nm to 1100nm.
Embodiment one
The silicon absorber thickness of the battery structure (see Fig. 1 and Fig. 2) that we are given is 1000nm, due to different cycles and height
The two-dimentional light trapping structure of degree is different to the effect of influx and translocation, therefore, by cycle P excursion when assessing vertical incidence is
300nm to 1300nm, the height H excursion different light trapping structures corresponding short-circuit current density J for 100nm to 1000nmsc
(P, H) carrys out cycle and the height of optimization cycle two dimension light trapping structure.
Two-dimensional Cosine wavy surface light trapping structure is optimized by this optimization method, as shown in figure 3, optimal Two-dimensional Cosine wavy surface
The cycle of light trapping structure and height are respectively 650nm and 800nm (white point see in Fig. 3), and its corresponding short-circuit current density is
28.46mA/cm2.In the same manner, an optimal inverted pyramid light trapping structure can also be obtained by this optimization method, its cycle is
550nm, highly for 650nm, short-circuit current density is 28.32mA/cm2.
In order to embody the impact to battery influx and translocation for this optimal light trapping structure, fall into light knot with traditional pyramid simultaneously
The battery of structure, there is no light trapping structure flat plate cell, and the theoretical absorption limit is compared.As shown in figure 4, having light trapping structure
Battery significantly on whole solar energy spectral limit will the ratio good absorbing effect of flat plate cell, and all level off to pole
Limit.Meanwhile, the table of the influx and translocation effect to battery for the optimal cosine waveform face light trapping structure and optimal inverted pyramid light trapping structure
Now suitable.
Analyze in terms of angle, as shown in figure 5, when incident angle excursion is 0 ° to 85 °, optimal cosine waveform face falls into
It is insensitive to angle that the absorption spectrum of photo structure also show this cosine waveform face light trapping structure, similar with inverted pyramid.Examine
Consider the process of light trapping structure preparation, the light trapping structure in cosine face can be prepared by simple two-beam interference, and becomes
Shape area is big.Therefore, such periodic two-dimensional cosine waveform face light trapping structure is more practical.
Claims (2)
1. the silicon-based film solar cells of periodic two-dimensional cosine waveform face light trapping structure preparation method it is characterised in that
Its step is as follows：The substrate of metal electrode deposits transparent conductive oxide, with two-beam interference photoetching making cosine waveform
Light trapping structure, be then sequentially depositing and adulterate making silicon absorbed layer PN junction, then with interference lithography make cosine waveform sunken light
Structure, finally deposits upper transparent conductive oxide.
2. the system of the silicon-based film solar cells of periodic two-dimensional cosine waveform face according to claim 1 light trapping structure
Preparation Method is it is characterised in that the formula that described two-beam interference photoetching is exposed isI(x)=2I 0[1+cos(2πx/d
)], whereinI 0For exposure intensity,dFor fringe period,I(x) for exposure highly.
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