CN107516629A - Improve the buffer growth method of nitride epitaxial layer voltage endurance - Google Patents
Improve the buffer growth method of nitride epitaxial layer voltage endurance Download PDFInfo
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- CN107516629A CN107516629A CN201710499314.4A CN201710499314A CN107516629A CN 107516629 A CN107516629 A CN 107516629A CN 201710499314 A CN201710499314 A CN 201710499314A CN 107516629 A CN107516629 A CN 107516629A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02538—Group 13/15 materials
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Abstract
The present invention relates to a kind of buffer growth method for improving nitride epitaxial layer voltage endurance, it is included in substrate top surface with the first temperature growth low temperature buffer layer, first temperature rises to second temperature growth high temperature buffer layer, and cushion raw material is continually fed into during the first temperature rises to second temperature.The present invention improves the breakdown voltage of epitaxial film and device, improves the quality of device, reduce disqualification rate by being persistently included in cushion raw material in the temperature-rise period of cushion.
Description
Technical field
The present invention relates to semiconductor applications, are given birth to more particularly to a kind of cushion for improving nitride epitaxial layer voltage endurance
Long method.
Background technology
One of important parameter of nitride power devices is the breakdown voltage of device, typically by growing nitrogen on silicon substrate
The design of AlN buffer growths process and growth conditions during compound, reach the purpose for the breakdown voltage for improving material and device.By
In GaN growth required raw material trimethyl gallium at high temperature with silicon substrate react, therefore on a silicon substrate growing gallium nitride it
Before need grow one layer of aluminum nitride buffer layer.Find different aluminum nitride buffer layer growing methods to epitaxial material by studying
Voltage endurance has obvious influence.At present, the growth of aluminium nitride is a certain temperature growth between 900-1200 DEG C at high temperature
One layer；Or the aln layer of one layer of relative low temperature is first grown, a comparative high temperature is then warming up to again grows another layer of nitrogen
Change aluminium, but both growing methods all do not significantly improve to the breakdown voltage of epitaxial film and device.
The content of the invention
It is an object of the invention to provide a kind of buffer growth method for improving nitride epitaxial layer voltage endurance.
To reach above-mentioned purpose, the technical solution adopted by the present invention is：
A kind of buffer growth method for improving nitride epitaxial layer voltage endurance, is included in substrate top surface and is given birth to the first temperature
Long low temperature buffer layer, the first temperature rise to second temperature growth high temperature buffer layer, second temperature are risen in the first temperature
During be continually fed into cushion raw material.
Preferably, described cushion raw material is aluminium nitride.
Preferably, the first described temperature is at 600-1000 DEG C；Described second temperature is at 1000-1200 DEG C.
It is further preferred that the first described temperature is at 750-850 DEG C；Described second temperature is at 1050-1150 DEG C.
Preferably, the time that the first described temperature rises to described second temperature is 1-60 min.
It is further preferred that the time that the first described temperature rises to described second temperature is 5-10 min.
Preferably, the time 1-1800s of the first described temperature growth low temperature buffer layer, and/or described low temperature buffer
The thickness of layer growth is 1-50 nm.
It is further preferred that the time 10-60s of the first described temperature growth low temperature buffer layer, and/or described low temperature
The thickness of buffer growth is 1-10 nm.
Preferably, the time 1-3600s of described second temperature growth high temperature buffer layer, and/or described high-temperature buffer
The thickness of layer growth is 1-300 nm.
It is further preferred that the time 600-3000s of described second temperature growth high temperature buffer layer, and/or it is described
The thickness of high temperature buffer layer growth is 50-250 nm.
Preferably, described substrate is silicon substrate.
The principle of the application is that the growth pattern can keep the aluminium nitride film using aluminum nitride buffer layer raw material in height
Flatness in warm growth course.
Because above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art：
The present invention improves hitting for epitaxial film and device by being persistently included in cushion raw material in the temperature-rise period of cushion
Voltage is worn, improves the quality of device, reduces disqualification rate.
Embodiment
With reference to case study on implementation, the invention will be further described：
Embodiment one：
A kind of buffer growth method for improving nitride epitaxial layer voltage endurance, in the present embodiment：Substrate uses silicon substrate,
Cushion is using aluminium nitride as raw material.
Step is included in substrate top surface with the first temperature growth low temperature nitride aluminium cushion, wherein：First temperature is 850
DEG C, the time 30s of the first temperature growth low temperature nitride aluminium cushion, and/or the thickness of low temperature nitride aluminium buffer growth is 10
nm；Second temperature is risen to from the first temperature, it is uninterruptedly lasting to be passed through aluminium nitride in the 10min periods of uphill process
Raw material；When second temperature rises to 1100 DEG C, high-temperature ammonolysis aluminium cushion, second temperature growth high-temperature ammonolysis aluminium cushion are grown
Time 2400s, and/or the thickness of high-temperature ammonolysis aluminium buffer growth is 150 nm, until completing the growth of cushion.
Remaining embodiment：
| Embodiment two | Embodiment three | Example IV | |
| First temperature/DEG C | 600℃ | 750℃ | 1000℃ |
| Time/s of first temperature growth low temperature nitride aluminium cushion | 60s | 100s | 200s |
| Thickness/nm of first temperature growth low temperature nitride aluminium cushion | 20 nm | 30 nm | 50 nm |
| The period of uphill process/min | 20 min | 30 min | 60 min |
| Second temperature/DEG C | 1000℃ | 1050℃ | 1200℃ |
| Time/s of second temperature growing low temperature aluminum nitride buffer layer | 600s | 1000s | 3000s |
| Thickness/nm of second temperature growing low temperature aluminum nitride buffer layer | 50 nm | 100 nm | 250 nm |
Comparative example：
| Existing method | Embodiment one | Embodiment two | Embodiment three | Example IV | |
| Epitaxial wafer | Outside silica-based nitride Prolong piece | Outside silica-based nitride Prolong piece | Outside silica-based nitride Prolong piece | Outside silica-based nitride Prolong piece | Outside silica-based nitride Prolong piece |
| Extension thickness Degree/μm | 5μm | 5μm | 5μm | 5μm | 5μm |
| Breakdown voltage/ V | 750V | ≥900V | ≥900V | ≥900V | ≥900V |
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art's energy
Solution present disclosure much of that is simultaneously implemented according to this, and it is not intended to limit the scope of the present invention.It is all spiritual according to the present invention
The equivalent change or modification that essence is made, should all be included within the scope of the present invention.
Claims (10)
1. a kind of buffer growth method for improving nitride epitaxial layer voltage endurance, is included in substrate top surface with the first temperature
Low temperature growth buffer layer, the first temperature rise to second temperature growth high temperature buffer layer, it is characterised in that：Rise in the first temperature
To being continually fed into cushion raw material during second temperature.
2. the buffer growth method according to claim 1 for improving epitaxial layer voltage endurance, it is characterised in that：Described
Cushion raw material is aluminium nitride.
3. the buffer growth method according to claim 1 for improving epitaxial layer voltage endurance, it is characterised in that：Described
First temperature is at 600-1000 DEG C；Described second temperature is at 1000-1200 DEG C.
4. the buffer growth method according to claim 3 for improving epitaxial layer voltage endurance, it is characterised in that：Described
First temperature is at 750-850 DEG C；Described second temperature is at 1050-1150 DEG C.
5. the buffer growth method according to claim 1 for improving epitaxial layer voltage endurance, it is characterised in that：It is described
The first temperature to rise to time of described second temperature be 1-60 min.
6. the buffer growth method according to claim 5 for improving epitaxial layer voltage endurance, it is characterised in that：It is described
The first temperature to rise to time of described second temperature be 5-10 min.
7. the buffer growth method according to claim 1 for improving epitaxial layer voltage endurance, it is characterised in that：It is described
The first temperature growth low temperature buffer layer time 1-1800s, and/or described low temperature buffer layer growth thickness be 1-50
nm。
8. the buffer growth method according to claim 7 for improving epitaxial layer voltage endurance, it is characterised in that：It is described
The first temperature growth low temperature buffer layer time 10-60s, and/or described low temperature buffer layer growth thickness be 1-10
nm。
9. the buffer growth method according to claim 1 for improving epitaxial layer voltage endurance, it is characterised in that：It is described
Second temperature growth high temperature buffer layer time 1-3600s, and/or described high temperature buffer layer growth thickness be 1-300
nm。
10. the buffer growth method according to claim 9 for improving epitaxial layer voltage endurance, it is characterised in that：It is preferred that
Ground, described second temperature grow the time 600-3000s of high temperature buffer layer, and/or the thickness of described high temperature buffer layer growth
Spend for 50-250 nm.
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| CN201710499314.4A CN107516629B (en) | 2017-06-27 | 2017-06-27 | Buffer layer growth method for improving withstand voltage characteristic of nitride epitaxial layer |
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| CN201710499314.4A CN107516629B (en) | 2017-06-27 | 2017-06-27 | Buffer layer growth method for improving withstand voltage characteristic of nitride epitaxial layer |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006068374A1 (en) * | 2004-12-23 | 2006-06-29 | Lg Innotek Co., Ltd | Nitride semiconductor light emitting device and fabrication method thereof |
| CN103531683A (en) * | 2013-09-23 | 2014-01-22 | 华灿光电股份有限公司 | Gallium nitride light emitting diode and preparation method thereof |
| CN103700743A (en) * | 2012-09-28 | 2014-04-02 | 江苏汉莱科技有限公司 | Light-emitting diode and preparation method of buffer layer thereof |
| CN104347761A (en) * | 2013-08-06 | 2015-02-11 | 甘志银 | Crystal quality-controllable GaN thin film epitaxial growth method |
-
2017
- 2017-06-27 CN CN201710499314.4A patent/CN107516629B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006068374A1 (en) * | 2004-12-23 | 2006-06-29 | Lg Innotek Co., Ltd | Nitride semiconductor light emitting device and fabrication method thereof |
| CN103700743A (en) * | 2012-09-28 | 2014-04-02 | 江苏汉莱科技有限公司 | Light-emitting diode and preparation method of buffer layer thereof |
| CN104347761A (en) * | 2013-08-06 | 2015-02-11 | 甘志银 | Crystal quality-controllable GaN thin film epitaxial growth method |
| CN103531683A (en) * | 2013-09-23 | 2014-01-22 | 华灿光电股份有限公司 | Gallium nitride light emitting diode and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 李艳炯等: ""应用厚缓冲层实现蓝宝石上高质量AlN外延层的MOCVD生长"", 《半导体光电》 * |
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