CN107516599B - A kind of three-dimensional structure ceramic capacitor and preparation method thereof - Google Patents
A kind of three-dimensional structure ceramic capacitor and preparation method thereof Download PDFInfo
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- CN107516599B CN107516599B CN201710707116.2A CN201710707116A CN107516599B CN 107516599 B CN107516599 B CN 107516599B CN 201710707116 A CN201710707116 A CN 201710707116A CN 107516599 B CN107516599 B CN 107516599B
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- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000003990 capacitor Substances 0.000 claims abstract description 30
- 238000010301 surface-oxidation reaction Methods 0.000 claims abstract description 24
- 239000000919 ceramic Substances 0.000 claims abstract description 19
- 238000000227 grinding Methods 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000004080 punching Methods 0.000 claims abstract description 13
- 239000002344 surface layer Substances 0.000 claims abstract description 10
- 230000002706 hydrostatic effect Effects 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims abstract description 8
- 238000007731 hot pressing Methods 0.000 claims abstract description 7
- 239000000843 powder Substances 0.000 claims abstract description 7
- 238000005266 casting Methods 0.000 claims abstract description 5
- 238000003825 pressing Methods 0.000 claims abstract description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910002113 barium titanate Inorganic materials 0.000 claims description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- HGWOWDFNMKCVLG-UHFFFAOYSA-N [O--].[O--].[Ti+4].[Ti+4] Chemical compound [O--].[O--].[Ti+4].[Ti+4] HGWOWDFNMKCVLG-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Abstract
The present invention discloses the preparation method and capacitor of a kind of three-dimensional structure ceramic capacitor.It the described method comprises the following steps: by semiconductive ceramic powder casting films by hot-forming for green sheet；Through-hole is gone out in the green sheet；The green sheet after the on-perforated green sheet and punching is stacked together, shaped blank sheet is formed by hot pressing and hydrostatic pressing respectively；The shaped blank sheet is put into reducing atmosphere and is sintered, semiconducting potsherd is obtained；Surface oxidation is carried out to the semiconducting potsherd；By the on-perforated one side grinding of semiconducting potsherd described after surface oxidation, surface oxidation insulating layer is removed；It metallizes to the semiconducting potsherd two sides after grinding, obtains three-dimensional structure surface layer semiconductor ceramics capacitorss.Using method or capacitor of the invention, it can greatly increase condenser capacity.
Description
Technical field
The present invention relates to capacitor preparation fields, more particularly to a kind of three-dimensional structure ceramic capacitor and its preparation side
Method.
Background technique
Semiconductor ceramic capacitor generally divides three categories, i.e. blocking stratotype, surface stratotype and grain boundary stratotype.Surface
Type semiconductor capacitor is reoxidized using semiconductive ceramic surface, and surface insulation dielectric layer is formed.Surface stratotype is partly led at present
Body ceramic capacitor mostly uses barium titanate, strontium titanates or titanium dioxide ceramic as dielectric substance, it is desirable that the table after oxidation
Surface layer ceramics have the characteristics that dielectric constant is high, dielectric loss is low, proof voltage is high and temperature stability is good.In order to adapt to micro-group dress
Demand for development, electronic component is just gradually to miniaturization, and existing surface layer semiconductor ceramics capacitorss can not expire
The requirement of sufficient larger capacity, smaller volume, while multilayer ceramic capacitor can not be bonded.In the prior art often through local quarter
Substrate is lost to form hole or groove, electrode for capacitors area is increased with this, although can increase capacitor by hole or groove
Device area, but since hole or the increased area of groove be not significant, the effect for increasing condenser capacity is not obvious.
The capacitance of capacitor is directly proportional to effective electrode area, and three-dimensional structure ceramic capacitor can greatly increase electrode effective area,
Correspondingly increase capacitance.
Summary of the invention
The object of the present invention is to provide a kind of three-dimensional structure ceramic capacitors and preparation method thereof, and such method is produced
The capacitor of three-dimensional structure has three-dimensional structure, greatly increases condenser capacity.
To achieve the above object, the present invention provides following schemes:
A kind of preparation method of three-dimensional structure ceramic capacitor, which comprises the following steps:
Semiconductive ceramic powder casting films are hot-forming for green sheet；The semiconductive ceramic powder include barium titanate,
Strontium titanates or titanium dioxide semiconductor Ceramic material of ceramic capacitor；
Through-hole is gone out in the green sheet；
The green sheet after the on-perforated green sheet and punching is stacked together, passes through hot pressing and hydrostatic respectively
Swaging is at shaped blank sheet；
The shaped blank sheet is put into reducing atmosphere and is sintered, semiconducting potsherd is obtained；
Surface oxidation is carried out to the semiconducting potsherd；
By the on-perforated one side grinding of semiconducting potsherd described after surface oxidation, surface oxidation insulating layer is removed；
It metallizes to the semiconducting potsherd two sides after grinding, obtains three-dimensional structure surface layer type semiconductor pottery
Porcelain condenser.
Optionally, described to go out through-hole in the green sheet and specifically include:
Through-hole is gone out in the green sheet by way of mechanical punching；
Alternatively, going out through-hole in the green sheet by way of laser boring.
Optionally, described to go out through-hole in the green sheet and specifically include:
The bore dia of the through-hole is 10~100 microns, and opening area and leading is 19.6%~30.6%.
Optionally, described that semiconducting potsherd progress surface oxidation is specifically included:
Surface oxidation is carried out to the semiconducting potsherd in atmospheric environment；
Alternatively, carrying out surface oxidation to the semiconducting potsherd in oxygen atmosphere.
Optionally, the semiconducting potsherd two sides after described pair of grinding is metallized, and obtains three-dimensional structure surface
Layer type semiconductor ceramic capacitor specifically includes:
It is metallized by magnetron sputtering mode to the semiconducting potsherd two sides after grinding, obtains three-dimensional structure
Surface layer semiconductor ceramics capacitorss；
Alternatively, being metallized by chemical vapor deposition mode to the semiconducting potsherd two sides after grinding, obtain
To three-dimensional structure surface layer semiconductor ceramics capacitorss.
A kind of three-dimensional structure ceramic capacitor, the capacitor include:
Green sheet with through-hole, the green sheet without through-hole；
Through-hole is had in the green sheet with through-hole；
The green sheet with through-hole, the green sheet without through-hole are molded by hot pressing and hydrostatic；
The green sheet without through-hole overlays the lower section of the green sheet with through-hole；
The green sheet and the green sheet with through-hole without through-hole passes through cofiring and forms blind hole, Surface Oxygen
Change, metallization operations；
Grinding operation, removal oxidation are also passed through in the surface of the green sheet without through-hole after cofiring, surface oxidation
Insulating layer.
Optionally, the green sheet with through-hole, be specially 0.1-0.4 millimeters of thickness without the green sheet of through-hole
Green sheet.
Optionally, it is specifically included in the green sheet with through-hole with through-hole:
The through-hole is arranged at array type.
Optionally, it is specifically included in the green sheet with through-hole with through-hole:
The through-hole diameter is 10~100 microns, and opening area and leading is 19.6%~30.6%.
Optionally, it is specifically included in the green sheet with through-hole with through-hole:
100 microns of the bore dia of the through-hole, 1000 microns of pitch of holes；
Alternatively, 10 microns of the bore dia of the through-hole, 80 microns of pitch of holes.
The specific embodiment provided according to the present invention, the invention discloses following technical effects:
By the way that the green sheet of punching and on-perforated green sheet are stacked together in the present invention, by hot pressing and hydrostatic pressing
Molding operates by cofiring, surface oxidation, grinding, metallization etc., obtains the surface type semiconductive ceramic capacitor of three-dimensional structure.
The green sheet of through-hole and punching in the present invention in the green sheet of punching realizes the three-dimensional structure of semiconductive ceramic capacitor, due to
It include multiple through-holes in the green sheet of punching, and area of the hole wall of through-hole as capacitor, therefore considerably increase capacitor
Area, greatly improve the capacity of capacitor.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without any creative labor, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the preparation method flow chart of three-dimensional structure of embodiment of the present invention ceramic capacitor；
Fig. 2 is the structure chart for the green sheet with through-hole that the through-hole of the embodiment of the present invention is arranged with array type；
Fig. 3 is the structure chart for the three-dimensional structure ceramic capacitor that the through-hole of the embodiment of the present invention is arranged with array type.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of three-dimensional structure ceramic capacitors and preparation method thereof, and such method is produced
The capacitor of three-dimensional structure has three-dimensional structure, greatly increases condenser capacity.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
Fig. 1 is the preparation method flow chart of three-dimensional structure of embodiment of the present invention ceramic capacitor.Referring to Fig. 1, a kind of three-dimensional
The preparation method of structural ceramics capacitor, comprising the following steps:
Step 101: semiconductive ceramic powder casting films are hot-forming for green sheet；Wherein casting films are with a thickness of 20-50
Micron thickness green sheet is with a thickness of 0.1-0.4 millimeters；The semiconductive ceramic powder includes barium titanate, strontium titanates or titanium dioxide
Titanium semiconductor ceramic capacitor porcelain；
Step 102: going out through-hole in the green sheet；
Step 103: the green sheet after the on-perforated green sheet and punching being stacked together, passes through heat respectively
Pressure and hydrostatic pressing form shaped blank sheet；
Step 104: the shaped blank sheet being put into reducing atmosphere and is sintered, semiconducting potsherd is obtained；
Step 105: surface oxidation is carried out to the semiconducting potsherd；It can make pottery in atmospheric environment to the semiconducting
Tile carries out surface oxidation, or carries out surface oxidation to the semiconducting potsherd in oxygen atmosphere.
Step 106: the on-perforated one side of semiconducting potsherd described after surface oxidation being ground, removal surface oxidation insulation
Layer；
Step 107: metallizing to the semiconducting potsherd two sides after grinding, obtain three-dimensional structure surface stratotype
Semiconductor ceramic capacitor.
It wherein, can be by way of mechanical punching in the green compact in the preparation process of three-dimensional structure ceramic capacitor
On piece goes out through-hole；Or through-hole is gone out in the green sheet by way of laser boring.The bore dia of through-hole be 10~
100 microns, opening area and leading is 19.6%~30.6%, open area lead for through-hole with through-hole green sheet upper surface opening it is total
The ratio between the gross area of area and the green sheet upper surface with through-hole.
Such as: when using mechanical punching by the way of be punched out when, the bore dia of through-hole is 100 microns, and pitch of holes is
1000 microns, there is 3*3 centimetres of green sheet at this time, when opening area to lead is 20%, then in the green sheet after passing through mechanical punching then
Probably have 24000 through-holes.
When being punched out using the mode of laser boring, the bore dia of through-hole is 10 microns, and pitch of holes is 80 micro-
Rice when opening area to lead is 20%, is then then probably had when the green sheet for having 3*3 centimetres by the green sheet after laser boring
2400000 through-holes.
If firing back aperture is D, hole depth H opens area and leads K.Hole area π R2,2 π RH of hole wall area, the then capacitor of three-dimensional structure
Amount increases multiple Z
Z=1+4K (H/D)
If the aspect ratio H/D in hole is 10, K=0.3, then it is 13 that capacitance, which increases multiple Z,.
It is found that the quantity of through-hole is especially more from above two punch pattern, the face of capacitor is significantly increased with this
Product, the through-hole and green sheet shape in capacitor compared with traditional surface layer semiconductor ceramics capacitorss, in the present invention
At new three-dimensional structure, and the area of such increased capacitor of new structure is, it can be achieved that Fabrication of High Specific Capacitance and micromation, meet micro-group
Reload request.
Compared with the biggish etching technics of technology difficulty and media coating preparation process, structure of the invention is easy control
System, enforcement difficulty is small, and qualification rate is high, at low cost.
Through-hole can be arranged at array type in green sheet with through-hole, alternatively, the through-hole is at regular pattern arrangement, or
Through-hole described in person is arranged at irregular figure.The band logical that Fig. 2 is arranged for the through-hole of the embodiment of the present invention with array type in the present invention
The structure chart of the green sheet in hole, referring to fig. 2, the bore dia of through-hole 201 is 10~100 microns in the green sheet with through-hole, is opened
It is 19.6%~30.6% that area, which is led,.When it is mechanical through hole that through-hole 201 is corresponding, 100 microns of the bore dia of through-hole 201, Kong Jian
Away from 1000 microns；When being laser boring, 10 microns of the bore dia of through-hole 201,80 microns of pitch of holes.
Fig. 3 is the structure chart for the three-dimensional structure ceramic capacitor that the through-hole of the embodiment of the present invention is arranged with array type.Referring to
Fig. 3, a kind of three-dimensional structure ceramic capacitor, the capacitor include: the green sheet 301 with through-hole, the life without through-hole
Blank 302；Through-hole 201 is had in the green sheet 301 with through-hole；The green sheet 301 with through-hole, it is described without
There is the green sheet 302 of through-hole molded by hot pressing and hydrostatic；The green sheet 302 without through-hole overlays described have
The lower section of the green sheet 301 of through-hole；It is described to be passed through without the green sheet 302 and the green sheet 301 with through-hole of through-hole
Cross cofiring, oxidation, metallization operations；The green sheet 302 without through-hole also passes through grinding operation after cofiring oxidation.
The green sheet 301 with through-hole without the green sheet 302 of through-hole is specially thickness 0.1-0.4 millimeters
Green sheet.
Capacitor in the present invention is the large value capacitor with 3D structure, the characteristic with high apparent dielectric constant.
The capacity of ceramic capacitor increases approach: 1. increase capacitor area；2. reducing dielectric thickness；
Shown in following formula:
Wherein C is capacitance, and ε is apparent dielectric constant, and S is capacitor area, and T is capacitor thickness.
Wherein there are two mode, the multiple stratification of such as ceramic condenser of mode 1, S increases for the method for increase condenser capacity；Side
The filming of such as dielectric layer of formula 2, reduces T.
The area that mode 1 increases capacitor is limited by capacitor miniaturization, micro-group reload request；Mode 2 need interior electrode and
Termination electrode, process difficulty increase, and the series equivalent resistance (ESR) and series equivalent inductance (ESL) of capacitor increase, and are unable to key
It closes.
Existing 3D technology: the hole worked it out by etching mode, complex procedures, difficulty are big.In addition the preparation of media coating
Technology difficulty is also big, and cannot once form continuous dielectric film, and the effective capacitance amount of flood all fails.It is beaten by laser
Hole is made into blind hole, and control parameter is difficult, and success rate is low.
The present invention plays the purpose for increasing capacitor area using three-dimensional (3D) structure to be had compared with prior art
The features such as simple process is convenient for operating, low manufacture cost, while the proof voltage of capacitor is not influenced, and keeps preferable microwave
Performance.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (10)
1. a kind of preparation method of three-dimensional structure ceramic capacitor, which comprises the following steps:
Semiconductive ceramic powder casting films are hot-forming for green sheet；The semiconductive ceramic powder includes barium titanate, metatitanic acid
Strontium or titanium dioxide semiconductor Ceramic material of ceramic capacitor；
Through-hole is gone out in the green sheet；
The green sheet after the on-perforated green sheet and punching is stacked together, by hot pressing and hydrostatic pressing formed at
Parison piece；
The shaped blank sheet is put into reducing atmosphere and is sintered, semiconducting potsherd is obtained；
Surface oxidation is carried out to the semiconducting potsherd；
By the on-perforated one side grinding of semiconducting potsherd described after surface oxidation, surface oxidation insulating layer is removed；
It metallizes to the semiconducting potsherd two sides after grinding, obtains three-dimensional structure surface stratotype semiconductive ceramic electricity
Container.
2. the preparation method of three-dimensional structure ceramic capacitor according to claim 1, which is characterized in that described in the life
Through-hole is gone out in blank to specifically include:
Through-hole is gone out in the green sheet by way of mechanical punching；
Alternatively, going out through-hole in the green sheet by way of laser boring.
3. the preparation method of three-dimensional structure ceramic capacitor according to claim 1, which is characterized in that described in the life
Through-hole is gone out in blank to specifically include:
The bore dia of the through-hole is 10~100 microns, and opening area and leading is 19.6%~30.6%, opens area and leads as through-hole with logical
The ratio between the gross area of the gross area of the opening of the green sheet upper surface in hole and the green sheet upper surface with through-hole.
4. the preparation method of three-dimensional structure ceramic capacitor according to claim 1, which is characterized in that described to described half
Leading potsherd carries out surface oxidation and specifically includes:
Surface oxidation is carried out to the semiconducting potsherd in atmospheric environment；
Alternatively, carrying out surface oxidation to the semiconducting potsherd in oxygen atmosphere.
5. the preparation method of three-dimensional structure ceramic capacitor according to claim 1, which is characterized in that after described pair of grinding
Semiconducting potsherd two sides metallize, obtain three-dimensional structure surface layer semiconductor ceramics capacitorss and specifically wrap
It includes:
It is metallized by magnetron sputtering mode to the semiconducting potsherd two sides after grinding, obtains three-dimensional structure surface
Layer type semiconductor ceramic capacitor；
Alternatively, metallizing by chemical vapor deposition mode to the semiconducting potsherd two sides after grinding, three are obtained
Tie up body structure surface stratotype semiconductor ceramic capacitor.
6. a kind of three-dimensional structure ceramic capacitor, which is characterized in that the capacitor includes:
Green sheet with through-hole, the green sheet without through-hole；
Through-hole is had in the green sheet with through-hole；
The green sheet with through-hole, the green sheet without through-hole are molded by hot pressing and hydrostatic；
The green sheet without through-hole overlays the lower section of the green sheet with through-hole；
The green sheet and the green sheet with through-hole without through-hole pass through cofiring formed blind hole, surface oxidation,
Metallization operations；
Grinding operation is also passed through on the surface of the green sheet without through-hole after cofiring, surface oxidation, removes oxide isolated
Layer.
7. three-dimensional structure ceramic capacitor according to claim 6, which is characterized in that the green sheet with through-hole,
Green sheet without through-hole is specially 0.1-0.4 millimeters of thickness of green sheet.
8. three-dimensional structure ceramic capacitor according to claim 6, which is characterized in that in the green sheet with through-hole
It is specifically included with through-hole:
The through-hole is arranged at array type.
9. three-dimensional structure ceramic capacitor according to claim 6, which is characterized in that in the green sheet with through-hole
It is specifically included with through-hole:
The through-hole diameter is 10~100 microns, opening area and leading is 19.6%~30.6%, opens area and leads as through-hole with through-hole
The ratio between the gross area of the gross area of the opening of green sheet upper surface and the green sheet upper surface with through-hole.
10. three-dimensional structure ceramic capacitor according to claim 6, which is characterized in that the green sheet with through-hole
In specifically included with through-hole:
100 microns of the bore dia of the through-hole, 1000 microns of pitch of holes；
Alternatively, 10 microns of the bore dia of the through-hole, 80 microns of pitch of holes.
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| CN201710707116.2A CN107516599B (en) | 2017-08-17 | 2017-08-17 | A kind of three-dimensional structure ceramic capacitor and preparation method thereof |
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| CN201710707116.2A CN107516599B (en) | 2017-08-17 | 2017-08-17 | A kind of three-dimensional structure ceramic capacitor and preparation method thereof |
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| CN107516599B true CN107516599B (en) | 2019-01-11 |
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| CN114446661B (en) * | 2021-12-06 | 2023-06-23 | 中北大学 | Multilayer ceramic capacitor based on chemical mechanical polishing and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1211050A (en) * | 1997-09-10 | 1999-03-17 | 电子科技大学 | Semiconducting sintering method for ceramic capacitor with crystal dielectric layer and surface layer |
| JP2004289051A (en) * | 2003-03-25 | 2004-10-14 | Toppan Printing Co Ltd | Substrate built-in capacitor structure and its manufacturing method |
| CN101567263A (en) * | 2007-06-14 | 2009-10-28 | 太阳诱电株式会社 | Capacitor and method of manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06215977A (en) * | 1993-01-19 | 1994-08-05 | Sumitomo Metal Ind Ltd | Grain boundary layer type semiconductor porcelain element and manufacture thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1211050A (en) * | 1997-09-10 | 1999-03-17 | 电子科技大学 | Semiconducting sintering method for ceramic capacitor with crystal dielectric layer and surface layer |
| JP2004289051A (en) * | 2003-03-25 | 2004-10-14 | Toppan Printing Co Ltd | Substrate built-in capacitor structure and its manufacturing method |
| CN101567263A (en) * | 2007-06-14 | 2009-10-28 | 太阳诱电株式会社 | Capacitor and method of manufacturing the same |
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