CN107509047A - A kind of 3D stacks single sampled pixel unit and its driving method - Google Patents
A kind of 3D stacks single sampled pixel unit and its driving method Download PDFInfo
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- CN107509047A CN107509047A CN201710852829.8A CN201710852829A CN107509047A CN 107509047 A CN107509047 A CN 107509047A CN 201710852829 A CN201710852829 A CN 201710852829A CN 107509047 A CN107509047 A CN 107509047A
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Abstract
The invention discloses a kind of 3D to stack single sampled pixel unit, signal including the photosignal generation unit on the chip of upper strata and in lower layer chip resets holding unit, signal output unit, by the way that the output-stage circuit of photosignal generation unit and dot structure is separated, further to reduce the influence of dot structure and illumination to final output signal, so as to make the lightsensitivity of the filling rate of pixel and photodiode effectively improve；And resetted by the way that electric signal caused by pixel photosignal generation unit is stored in into signal on the electric capacity of holding unit, utilize the resetting charge and electric charge induction at the electric capacity both ends, unitary sampling is only needed to can obtain electric signal caused by pixel, the time needed for signal-obtaining can substantially be shortened, finally improve the frame per second of imaging sensor.
Description
Technical field
The present invention relates to image sensor technologies field, more particularly, to a kind of 3D stack single sampled pixel unit and
Its driving method.
Background technology
With the continuous development of image sensor technologies, cmos image sensor is due to high integration, low-power consumption etc.
Advantage, in fields such as electronics, monitoring, navigation, traffic using more and more extensive.It is but continuous with cmos image sensor technology
Development, to the performance requirement of cmos image sensor also more and more higher.
High-speed is to weigh an important need index of cmos image sensor performance；And the frame of cmos image sensor
Rate is higher, and the speed that cmos image sensor obtains a two field picture is also higher.
However, all it is by gathering signal twice, to being obtained after the two signal transactings generally in cmos image sensors
To the signal of photodiode conversion.Because the signal of each photodiode photo conversion needs to obtain by double sampling
Arrive, cause circuit row cycle time relatively long, so that the frame per second of cmos image sensor is restricted.
In addition, in conventional art, in the pixel cell of cmos image sensor in addition to provided with light sensitive diode, it is additionally added
Amplifying unit, this will reduce the filling rate of pixel cell.In addition, light would generally produce certain carrier in metal interface,
Or electric charge caused by photoelectric device can be by substrate transport to other circuits, these will all cause picture signal to change,
So that the lightsensitivity of circuit reduces.
The content of the invention
It is an object of the invention to overcome drawbacks described above existing for prior art, there is provided a kind of 3D stacks single sampled pixel list
Member and its driving method.
To achieve the above object, technical scheme is as follows：
A kind of 3D stacks single sampled pixel unit, including：
Photosignal generation unit, on the chip of upper strata, for converting optical signals into electric signal；
Signal resets holding unit, in lower layer chip, for storing and transmitting caused by photosignal generation unit
Electric signal；
Signal output unit, in lower layer chip, the electric signal of holding unit transmission is resetted for output signal；
Wherein, upper strata chip is connected with lower layer chip using 3D stack manners, and the signal resets holding unit and passed through
The both ends of its electric capacity being provided with are connected with photosignal generation unit and signal output unit respectively；Pass through the electric capacity both ends
Resetting charge and electric charge induction, carry out unitary sampling obtain electric signal caused by photosignal generation unit.
Preferably, the photosignal generation unit includes a photodiode, a photoelectricity resets metal-oxide-semiconductor and one
Optoelectronic switch metal-oxide-semiconductor；Wherein, the photodiode is used to the optical signal of incidence being converted into electric signal, photodiode
Anode is connected to the ground, and the negative electrode of photodiode resets the source electrode of metal-oxide-semiconductor and the source electrode of optoelectronic switch metal-oxide-semiconductor with photoelectricity simultaneously
It is connected, the photoelectricity resets the exposure that metal-oxide-semiconductor is used to control photodiode, and photoelectricity resets the grid of metal-oxide-semiconductor and photoelectricity resets
Control signal is connected, and the drain electrode that photoelectricity resets metal-oxide-semiconductor is connected with power supply, and the optoelectronic switch metal-oxide-semiconductor is used to control electric signal
Transmission, the grid of optoelectronic switch metal-oxide-semiconductor are connected with photoelectricity transmission control signal, and the drain electrode of optoelectronic switch metal-oxide-semiconductor is as optical telecommunications
Number output end of generation unit is connected with the input of signal output unit.
Preferably, the signal, which resets holding unit, includes an electric capacity, the low reset metal-oxide-semiconductor of an electric capacity, a reset
Metal-oxide-semiconductor；Wherein, the electric capacity is used to pass through its caused electric charge induction, transmits the electric signal of photosignal generation unit conversion,
First end in electric capacity both ends resets the input of holding unit while the drain electrode with optoelectronic switch metal-oxide-semiconductor and electricity as signal
Hold it is low reset metal-oxide-semiconductor drain electrode be connected, the second end in electric capacity both ends as signal reset holding unit output end and meanwhile with
The input of the source electrode and signal output unit that reset metal-oxide-semiconductor is connected, and the low metal-oxide-semiconductor that resets of the electric capacity is used for electric capacity first end
The low level of current potential is resetted, and the low source electrode for resetting metal-oxide-semiconductor of electric capacity is connected to the ground, and the low grid for resetting metal-oxide-semiconductor of electric capacity is opened with electric capacity
Control signal is closed to be connected, it is described reset metal-oxide-semiconductor and be used for the high level of the terminal potential of electric capacity second reset, reset the drain electrode of metal-oxide-semiconductor with
Power supply is connected, and the grid for resetting metal-oxide-semiconductor is connected with reset signal.
Preferably, the signal output unit includes a signal amplification metal-oxide-semiconductor and a signal behavior metal-oxide-semiconductor；Wherein,
The electric signal that the signal amplification metal-oxide-semiconductor is used to receive its grid amplifies output, and the grid of signal amplification metal-oxide-semiconductor is as signal
The input of output unit is connected with the second end of electric capacity and the source electrode of reset metal-oxide-semiconductor simultaneously, and signal amplifies the drain electrode of metal-oxide-semiconductor
It is connected with power supply, the source electrode of signal amplification metal-oxide-semiconductor is connected with the source electrode of signal behavior metal-oxide-semiconductor, and the signal behavior metal-oxide-semiconductor is used for
The output of picture element signal is controlled, the drain electrode of signal behavior metal-oxide-semiconductor is connected with picture element signal output end, the grid of signal behavior metal-oxide-semiconductor
Pole is connected with selection signal.
The photosignal generation unit and the signal positioned at lower floor for being preferably located at upper strata reset holding unit
Between be connected by conductive via.
Preferably, between the drain electrode of the optoelectronic switch metal-oxide-semiconductor and the first end of electric capacity by be divided into upper strata chip and
The conductive via of lower layer chip is connected.
A kind of above-mentioned 3D stacks the driving method of single sampled pixel unit, comprises the following steps：
Step S01：Open photoelectricity to reset metal-oxide-semiconductor, optoelectronic switch metal-oxide-semiconductor and reset metal-oxide-semiconductor, the low reset MOS of shut-off electric capacity
Pipe and signal behavior metal-oxide-semiconductor, photodiode reset, and electric capacity both ends reset；
Step S02：Shut-off photoelectricity resets metal-oxide-semiconductor and optoelectronic switch metal-oxide-semiconductor, photodiode start to expose and accumulate electricity
Lotus, electric capacity both ends continue to keep reset state；
Step S03：Open optoelectronic switch metal-oxide-semiconductor, photodiode conversion electric signal transmission to optoelectronic switch metal-oxide-semiconductor
Connected electric capacity first end side, the voltage of electric capacity first end side reduce, and reduce the telecommunications that amplitude is photodiode conversion
Number；
Step S04：Optoelectronic switch metal-oxide-semiconductor is turned off, completes the transmission of electric signal caused by photodiode；
Step S05：Shut-off resets metal-oxide-semiconductor, and the end of electric capacity second being connected with resetting metal-oxide-semiconductor continues to keep resetting, and then beats
The low reset metal-oxide-semiconductor of electric capacity is opened, the electric capacity first end voltage that reset metal-oxide-semiconductor low with electric capacity is connected is reduced to 0, due to electric capacity both ends
Electric charge induction acts on, and the terminal voltage of electric capacity second being connected with resetting metal-oxide-semiconductor also reduces, and the magnitude of voltage phase that electric capacity both ends reduce
Deng being then reduced to the magnitude of voltage of electric signal caused by photodiode with resetting the terminal voltage of electric capacity second that is connected of metal-oxide-semiconductor；
Step S06：Turn off the low reset metal-oxide-semiconductor of electric capacity, opening signal selection metal-oxide-semiconductor, electric signal caused by photodiode
Voltage signal transmit the reading to picture element signal output end, completed to electric signal；
Step S07：Open photoelectricity to reset metal-oxide-semiconductor, optoelectronic switch metal-oxide-semiconductor and reset metal-oxide-semiconductor, carry out next frame reset.
It can be seen from the above technical proposal that the present invention is by the way that electric signal caused by pixel photosignal generation unit is deposited
Store up on the electric capacity for resetting holding unit in signal, acted on using the resetting charge and electric charge induction at electric capacity both ends, only need single to adopt
Sample can obtain electric signal caused by pixel, can substantially shorten the time needed for signal-obtaining, finally improve image sensing
The frame per second of device.Meanwhile by the way that photosignal generation unit and signal reset holding unit, signal output unit are separately positioned on
In upper and lower layers of chips, the circuit structure of pixel cell is set to use the form of 3D distributions, by photosignal generation unit and pixel
The output-stage circuit of structure is further spaced from, further to reduce the influence of dot structure and illumination to final output signal, from
And the filling rate of pixel and the lightsensitivity of photodiode can be made to effectively improve.
Brief description of the drawings
Fig. 1 is that a kind of 3D of a preferred embodiment of the present invention stacks the 3D structural representations of single sampled pixel unit；
Fig. 2 is that a kind of 3D of a preferred embodiment of the present invention stacks the electrical block diagram of single sampled pixel unit；
Fig. 3 is that a kind of 3D of a preferred embodiment of the present invention stacks the driving method timing diagram of single sampled pixel unit.
Embodiment
Below in conjunction with the accompanying drawings, the embodiment of the present invention is described in further detail.
It should be noted that in following embodiments, when embodiments of the present invention are described in detail, in order to clear
Ground represents the structure of the present invention in order to illustrate, special that structure in accompanying drawing is not drawn according to general proportion, and has carried out part
Amplification, deformation and simplified processing, therefore, should avoid being understood in this, as limitation of the invention.
In embodiment of the invention below, referring to Fig. 1, Fig. 1 is one kind of a preferred embodiment of the present invention
3D stacks the 3D structural representations of single sampled pixel unit.As shown in figure 1, a kind of 3D of the present invention stacks single sampled pixel list
Member, including the photosignal generation unit 11 being arranged on upper strata chip 10 and the signal reset guarantor being arranged in lower layer chip 20
Hold unit 21, signal output unit 22.Upper strata chip 10, lower layer chip 20 are connected according to upper-lower position with 3D stack manners,
The cmos image sensor 3D for forming 3D stereochemical structures stacks single sampled pixel unit.Upper strata chip, the lower floor's core stacked in 3D
On piece, one or more pixel cell can be set.
Closely sealed connection can be carried out by sticking dielectric layer (figure omits) between upper strata chip 10 and lower layer chip 20；On also,
It can be connected between layer chip 10 and each connecting node of lower layer chip 20 by conductive via (VIA) 30.Wherein, positioned at upper strata
The photosignal generation unit 11 of chip and positioned at lower layer chip the signal reset holding unit 21 between can pass through
Conductive via 30 is connected.
Pass through above and below being separately positioned on photosignal generation unit and signal reset holding unit, signal output unit two
In layer chip, the circuit structure of pixel cell is set to use the form of 3D distributions, by photosignal generation unit and dot structure
Output-stage circuit is further spaced from, and can further reduce the influence of dot structure and illumination to final output signal, so as to
The filling rate of pixel and the lightsensitivity of photosignal generation unit is enough set to effectively improve.
The also settable PAD drawn as circuit on upper strata chip 10.
Referring to Fig. 2, Fig. 2, which is a kind of 3D of a preferred embodiment of the present invention, stacks the circuit structure of single sampled pixel unit
Schematic diagram.As shown in Fig. 2 the photosignal generation unit 11 on upper strata chip 10, for converting optical signals into telecommunications
Number.The photosignal generation unit 11 is provided with a photodiode PD, a photoelectricity resets metal-oxide-semiconductor M0 and a photoelectricity is opened
Close metal-oxide-semiconductor M1.The photodiode is used to the optical signal of incidence being converted into electric signal；The anode of photodiode and ground
VSS is connected, and the negative electrode of photodiode is connected with the source electrode of photoelectricity reset metal-oxide-semiconductor and the source electrode of optoelectronic switch metal-oxide-semiconductor simultaneously
In connecting node A.
The photoelectricity resets the exposure that metal-oxide-semiconductor is used to control photodiode；The grid that photoelectricity resets metal-oxide-semiconductor is answered with photoelectricity
Position control signal RPD is connected, and the drain electrode that photoelectricity resets metal-oxide-semiconductor is connected with power vd D.
The optoelectronic switch metal-oxide-semiconductor is used for the transmission for controlling electric signal；The grid of optoelectronic switch metal-oxide-semiconductor and photoelectricity transmission control
Signal TX processed is connected, the output end and signal output unit 21 that drain as photosignal generation unit of optoelectronic switch metal-oxide-semiconductor
Input be connected.
Signal in lower layer chip 20 resets holding unit 21, for storing and transmitting the production of photosignal generation unit
Raw electric signal.The signal, which resets holding unit 21, includes an electric capacity CAP, the low reset metal-oxide-semiconductor M2 and one of an electric capacity
Individual reset metal-oxide-semiconductor M3.The electric capacity is used to pass through its caused electric charge induction, the telecommunications of transmission photosignal generation unit conversion
Number；First end in electric capacity both ends resets the input of holding unit (close to the capacitor plate end of connecting node B points) as signal
End drain electrode with optoelectronic switch metal-oxide-semiconductor simultaneously and the low drain electrode for resetting metal-oxide-semiconductor of electric capacity are connected in connecting node B, electric capacity both ends
In the second end (close to the capacitor plate end of connecting node C points) as signal reset holding unit output end and meanwhile with reset
The source electrode of metal-oxide-semiconductor and the input of signal output unit 22 are connected in connecting node C.The drain electrode of the optoelectronic switch metal-oxide-semiconductor
It is connected between the first end of electric capacity by being divided into the conductive via 30 of upper strata chip and lower layer chip.
The low low level reset for resetting metal-oxide-semiconductor and being used for the terminal potential of electric capacity first of the electric capacity；The low source for resetting metal-oxide-semiconductor of electric capacity
Pole is connected with ground VSS, and the low grid for resetting metal-oxide-semiconductor of electric capacity is connected with capacitance switch control signal RC.
The high level reset for resetting metal-oxide-semiconductor and being used for the terminal potential of electric capacity second；Reset drain electrode and the power vd D of metal-oxide-semiconductor
It is connected, the grid for resetting metal-oxide-semiconductor is connected with reset signal RST.
The same signal output unit 22 in lower layer chip 20, the electricity of holding unit transmission is resetted for output signal
Signal.The signal output unit 22 includes a signal and amplifies a metal-oxide-semiconductor M4 and signal behavior metal-oxide-semiconductor M5.The signal
The electric signal that amplification metal-oxide-semiconductor is used to receive its grid amplifies output；The grid of signal amplification metal-oxide-semiconductor is as signal output unit
Input simultaneously with the second end of electric capacity and resetting the source electrode of metal-oxide-semiconductor and being connected in connecting node C, signal amplification metal-oxide-semiconductor
Drain electrode is connected with power vd D, and the source electrode of the source electrode and signal behavior metal-oxide-semiconductor of signal amplification metal-oxide-semiconductor is connected in connecting node D.
The signal behavior metal-oxide-semiconductor is used for the output for controlling picture element signal；The drain electrode of signal behavior metal-oxide-semiconductor and picture element signal
Output end VP is connected, and the grid of signal behavior metal-oxide-semiconductor is connected with selection signal SEL.
Above-mentioned photoelectricity resets the low reset metal-oxide-semiconductor M2 of metal-oxide-semiconductor M0, optoelectronic switch metal-oxide-semiconductor M1, electric capacity, resets metal-oxide-semiconductor M3, letter
Number amplification metal-oxide-semiconductor M4 and each metal-oxide-semiconductors of signal behavior metal-oxide-semiconductor M5 source electrode and drain electrode exchange do not influence circuit function.
Resetted by the way that electric signal caused by pixel photosignal generation unit is stored in into signal on the electric capacity of holding unit,
Acted on using the resetting charge and electric charge induction at electric capacity both ends, only need unitary sampling to can obtain electric signal caused by pixel, energy
The enough obvious time shortened needed for signal-obtaining, finally improve the frame per second of imaging sensor.
Below by embodiment and accompanying drawing, above-mentioned 3D a kind of to the present invention stacks the drive of single sampled pixel unit
Dynamic method is described in detail.
Referring to Fig. 3, Fig. 3, which is a kind of 3D of a preferred embodiment of the present invention, stacks the driving method of single sampled pixel unit
Timing diagram.As shown in figure 3, a kind of above-mentioned 3D of the present invention stacks the driving method of single sampled pixel unit, including following step
Suddenly：
Step S01：Open photoelectricity to reset metal-oxide-semiconductor, optoelectronic switch metal-oxide-semiconductor and reset metal-oxide-semiconductor, the low reset MOS of shut-off electric capacity
Pipe and signal behavior metal-oxide-semiconductor, photodiode reset, and electric capacity both ends reset.
As shown in figure 3, during original state, reset signal RST, photoelectricity transmission control signal TX, photoelectricity is set to reset control letter
Number RPD is high voltage, and makes capacitance switch control signal RC and selection signal SEL be low-voltage；Photoelectricity reset metal-oxide-semiconductor M0,
Optoelectronic switch metal-oxide-semiconductor M1, reset metal-oxide-semiconductor M3 are turned on, and electric capacity is low to reset metal-oxide-semiconductor M2, signal amplification metal-oxide-semiconductor M4, signal behavior
Metal-oxide-semiconductor M5 is turned off, and photodiode PD and electric capacity CAP reset, and connecting node A, B and C are high voltage, and connecting node A,
B and C voltage VA, VB, VC meets：VA=VB=VC=VDD.VDD represents supply voltage.
Step S02：Shut-off photoelectricity resets metal-oxide-semiconductor and optoelectronic switch metal-oxide-semiconductor, photodiode start to expose and accumulate electricity
Lotus, electric capacity both ends continue to keep reset state.
As shown in figure 3, at the t0 moment, photoelectricity transmission control signal TX and photoelectricity reseting controling signal RPD are become by high voltage
For low-voltage, photoelectricity resets metal-oxide-semiconductor M0 and optoelectronic switch metal-oxide-semiconductor M1 and is turned off, and photodiode PD exposures, produces electric charge, even
Connect the reduction of node A points voltage.
Step S03：Open optoelectronic switch metal-oxide-semiconductor, photodiode conversion electric signal transmission to optoelectronic switch metal-oxide-semiconductor
Connected electric capacity first end side, the voltage of electric capacity first end side reduce, and reduce the telecommunications that amplitude is photodiode conversion
Number.
As shown in figure 3, at the t1 moment, photoelectricity transmission control signal TX is changed into high voltage, optoelectronic switch metal-oxide-semiconductor from low-voltage
M1 is turned on, and electric charge caused by photodiode PD reaches electric capacity CAP first end, and voltage reduces at connecting node B points.
Step S04：Optoelectronic switch metal-oxide-semiconductor is turned off, completes the transmission of electric signal caused by photodiode.
As shown in figure 3, at the t2 moment, photoelectricity transmission control signal TX is changed into low-voltage, optoelectronic switch metal-oxide-semiconductor from high voltage
M1 is turned off, connecting node B point voltage stabilizations, and its stable voltage is：VB=VDD-Vsig, wherein Vsig are photodiode PD
In electric charge caused by moment t0 to moment t2.
Step S05：Shut-off resets metal-oxide-semiconductor, and the end of electric capacity second being connected with resetting metal-oxide-semiconductor continues to keep resetting, and then beats
The low reset metal-oxide-semiconductor of electric capacity is opened, the electric capacity first end voltage that reset metal-oxide-semiconductor low with electric capacity is connected is reduced to 0, due to electric capacity both ends
Electric charge induction acts on, and the terminal voltage of electric capacity second being connected with resetting metal-oxide-semiconductor also reduces, and the magnitude of voltage phase that electric capacity both ends reduce
Deng being then reduced to the magnitude of voltage of electric signal caused by photodiode with resetting the terminal voltage of electric capacity second that is connected of metal-oxide-semiconductor.
As shown in figure 3, at the t3 moment, reset signal RST is changed into low-voltage from high voltage, resets metal-oxide-semiconductor M3 shut-offs, connection
Node C point voltages continue to remain VC=VDD.
At the t4 moment, capacitance switch control signal RC is changed into high voltage from low-voltage, and the low metal-oxide-semiconductor M2 that resets of electric capacity is opened,
Connecting node B point voltages are reduced to 0 by (VDD-Vsig), and the voltage difference that connecting node B points reduce is (VDD-Vsig).Due to electricity
Hold the electric charge induction effect at both ends, connecting node C point voltages decline identical voltage difference with connecting node B points voltage, then connected
Node C point voltages also reduce (VDD-Vsig), then the final voltage of connecting node C points is：VC=VDD- (VDD-Vsig)=
Vsig, i.e., the voltage that connecting node C points are now stablized are the electrical signal voltage of photodiode conversion.
Step S06：Turn off the low reset metal-oxide-semiconductor of electric capacity, opening signal selection metal-oxide-semiconductor, electric signal caused by photodiode
Voltage signal transmit the reading to picture element signal output end, completed to electric signal.
As shown in figure 3, at the t5 moment, capacitance switch control signal RC is changed into low-voltage, the low reset MOS of electric capacity from high voltage
Pipe M2 is turned off, and connecting node C points voltage keeps constant, i.e. VC=Vsig.
At the t6 moment, selection signal SEL is changed into high voltage, signal behavior metal-oxide-semiconductor M5 conductings, connecting node C from low-voltage
The voltage signal of point reaches connecting node D points, and eventually arrives at picture element signal output end VP.
Assuming that signal amplification metal-oxide-semiconductor M4 gain is gm, then connecting node D point voltages VD is：
VD=gm × VC=gm × Vsig, then picture element signal output end VP voltage is also gm × Vsig.
Step S07：Open photoelectricity to reset metal-oxide-semiconductor, optoelectronic switch metal-oxide-semiconductor and reset metal-oxide-semiconductor, carry out next frame reset.
As shown in figure 3, at the t7 moment, selection signal SEL is changed into low-voltage, signal behavior metal-oxide-semiconductor M5 shut-offs from high voltage.
Finally, at the t8 moment, photoelectricity reseting controling signal RPD, photoelectricity transmission control signal TX and reset signal RST by
Low-voltage is changed into high voltage, and photoelectricity, which resets metal-oxide-semiconductor M0, optoelectronic switch metal-oxide-semiconductor M1 and resets metal-oxide-semiconductor M3, to be both turned on, connecting node A
Point, B points and C point voltages are all changed into high voltage, you can carry out the reset of next frame.
In summary, the present invention resets guarantor by the way that electric signal caused by pixel photosignal generation unit is stored in into signal
Hold on the electric capacity of unit, acted on using the resetting charge and electric charge induction at electric capacity both ends, only need unitary sampling to can obtain pixel
It caused electric signal, can substantially shorten the time needed for signal-obtaining, finally improve the frame per second of imaging sensor.Meanwhile
By the way that photosignal generation unit and signal are resetted into holding unit, signal output unit is separately positioned on layers of chips up and down
In, the circuit structure of pixel cell is used the form of 3D distributions, by the output stage of photosignal generation unit and dot structure
Circuit is further spaced from, further to reduce the influence of dot structure and illumination to final output signal, so as to make pixel
Filling rate and the lightsensitivity of photodiode effectively improve.
Above-described is only the preferred embodiments of the present invention, the embodiment and the patent guarantor for being not used to the limitation present invention
Scope, therefore the equivalent structure change that every specification and accompanying drawing content with the present invention is made are protected, similarly should be included in
In protection scope of the present invention.
Claims (7)
1. a kind of 3D stacks single sampled pixel unit, it is characterised in that including：
Photosignal generation unit, on the chip of upper strata, for converting optical signals into electric signal；
Signal resets holding unit, in lower layer chip, for storing and transmitting telecommunications caused by photosignal generation unit
Number；
Signal output unit, in lower layer chip, the electric signal of holding unit transmission is resetted for output signal；
Wherein, upper strata chip is connected with lower layer chip using 3D stack manners, and the signal resets holding unit and set by it
The both ends of some electric capacity are connected with photosignal generation unit and signal output unit respectively；Pass through the electricity at the electric capacity both ends
Lotus resets and electric charge induction, carries out unitary sampling and obtains electric signal caused by photosignal generation unit.
2. 3D according to claim 1 stacks single sampled pixel unit, it is characterised in that the photosignal generation unit
Metal-oxide-semiconductor and an optoelectronic switch metal-oxide-semiconductor are resetted including a photodiode, a photoelectricity；Wherein, the photodiode is used
In the optical signal of incidence is converted into electric signal, the anode of photodiode is connected to the ground, the negative electrode of photodiode simultaneously with
The source electrode of source electrode and optoelectronic switch metal-oxide-semiconductor that photoelectricity resets metal-oxide-semiconductor is connected, and the photoelectricity resets metal-oxide-semiconductor and is used to control photoelectricity
The exposure of diode, photoelectricity reset metal-oxide-semiconductor grid be connected with photoelectricity reseting controling signal, photoelectricity reset metal-oxide-semiconductor drain electrode and
Power supply is connected, and the optoelectronic switch metal-oxide-semiconductor is used for the transmission for controlling electric signal, the grid of optoelectronic switch metal-oxide-semiconductor and photoelectricity transmission
Control signal is connected, the output end and signal output unit of the drain electrode of optoelectronic switch metal-oxide-semiconductor as photosignal generation unit
Input is connected.
3. 3D according to claim 2 stacks single sampled pixel unit, it is characterised in that the signal resets holding unit
Including an electric capacity, the low reset metal-oxide-semiconductor of an electric capacity, a reset metal-oxide-semiconductor；Wherein, the electric capacity is used for by caused by it
Electric charge induction, the electric signal of transmission photosignal generation unit conversion, the first end in electric capacity both ends reset holding as signal
The drain electrode with optoelectronic switch metal-oxide-semiconductor simultaneously of the input of unit and the low drain electrode for resetting metal-oxide-semiconductor of electric capacity are connected, in electric capacity both ends
The second end as signal reset holding unit output end simultaneously with reset metal-oxide-semiconductor source electrode and signal output unit it is defeated
Enter to hold and be connected, the low low level reset for resetting metal-oxide-semiconductor and being used for the terminal potential of electric capacity first of the electric capacity, the low reset metal-oxide-semiconductor of electric capacity
Source electrode is connected to the ground, and the low grid for resetting metal-oxide-semiconductor of electric capacity is connected with capacitance switch control signal, and the reset metal-oxide-semiconductor is used for electricity
The high level for holding the second terminal potential resets, and the drain electrode for resetting metal-oxide-semiconductor is connected with power supply, resets the grid and reset signal of metal-oxide-semiconductor
It is connected.
4. 3D according to claim 3 stacks single sampled pixel unit, it is characterised in that the signal output unit includes
One signal amplification metal-oxide-semiconductor and a signal behavior metal-oxide-semiconductor；Wherein, the signal amplification metal-oxide-semiconductor is used for receive its grid
Electric signal amplification output, input of the grid as signal output unit of signal amplification metal-oxide-semiconductor while the second end with electric capacity
And the source electrode of reset metal-oxide-semiconductor is connected, the drain electrode of signal amplification metal-oxide-semiconductor is connected with power supply, and signal amplifies the source electrode and letter of metal-oxide-semiconductor
The source electrode of number selection metal-oxide-semiconductor is connected, and the signal behavior metal-oxide-semiconductor is used to control the output of picture element signal, signal behavior metal-oxide-semiconductor
Drain electrode is connected with picture element signal output end, and the grid of signal behavior metal-oxide-semiconductor is connected with selection signal.
5. 3D according to claim 1 stacks single sampled pixel unit, it is characterised in that the optical telecommunications positioned at upper strata
Number generation unit between resetting holding unit positioned at the signal of lower floor with being connected by conductive via.
6. 3D according to claim 4 stacks single sampled pixel unit, it is characterised in that the optoelectronic switch metal-oxide-semiconductor
It is connected between drain electrode and the first end of electric capacity by being divided into the conductive via of upper strata chip and lower layer chip.
7. a kind of 3D as claimed in claim 4 stacks the driving method of single sampled pixel unit, it is characterised in that including following
Step：
Step S01：Open photoelectricity reset metal-oxide-semiconductor, optoelectronic switch metal-oxide-semiconductor and reset metal-oxide-semiconductor, shut-off electric capacity it is low reset metal-oxide-semiconductor and
Signal behavior metal-oxide-semiconductor, photodiode reset, and electric capacity both ends reset；
Step S02：Turn off photoelectricity and reset metal-oxide-semiconductor and optoelectronic switch metal-oxide-semiconductor, photodiode starts exposure and stored charge, electricity
Hold both ends to continue to keep reset state；
Step S03：Optoelectronic switch metal-oxide-semiconductor is opened, the electric signal transmission of photodiode conversion is connected to optoelectronic switch metal-oxide-semiconductor
Electric capacity first end side, the voltage of electric capacity first end side reduces, and reduces the electric signal that amplitude is photodiode conversion；
Step S04：Optoelectronic switch metal-oxide-semiconductor is turned off, completes the transmission of electric signal caused by photodiode；
Step S05：Shut-off resets metal-oxide-semiconductor, and the end of electric capacity second being connected with resetting metal-oxide-semiconductor continues to keep resetting, and then opens electricity
Hold low reset metal-oxide-semiconductor, the electric capacity first end voltage that reset metal-oxide-semiconductor low with electric capacity is connected is reduced to 0, due to the electric charge at electric capacity both ends
Induction effect, the terminal voltage of electric capacity second being connected with resetting metal-oxide-semiconductor also reduces, and the magnitude of voltage that electric capacity both ends reduce is equal, then
The terminal voltage of electric capacity second being connected with resetting metal-oxide-semiconductor is reduced to the magnitude of voltage of electric signal caused by photodiode；
Step S06：Turn off the low reset metal-oxide-semiconductor of electric capacity, opening signal selection metal-oxide-semiconductor, the electricity of electric signal caused by photodiode
Pressure signal transmits the reading to picture element signal output end, completed to electric signal；
Step S07：Open photoelectricity to reset metal-oxide-semiconductor, optoelectronic switch metal-oxide-semiconductor and reset metal-oxide-semiconductor, carry out next frame reset.
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