CN107507902A - A kind of burst of ultraviolel white LED lamp structure - Google Patents
A kind of burst of ultraviolel white LED lamp structure Download PDFInfo
- Publication number
- CN107507902A CN107507902A CN201710718803.4A CN201710718803A CN107507902A CN 107507902 A CN107507902 A CN 107507902A CN 201710718803 A CN201710718803 A CN 201710718803A CN 107507902 A CN107507902 A CN 107507902A
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- lamp body
- fluorescent glue
- burst
- blue
- white led
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- 239000003292 glue Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000002096 quantum dot Substances 0.000 claims abstract description 18
- 239000006185 dispersion Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 239000000853 adhesive Substances 0.000 claims abstract description 4
- 230000001070 adhesive effect Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 4
- 230000008569 process Effects 0.000 claims abstract description 4
- 230000007704 transition Effects 0.000 claims abstract description 4
- 238000005253 cladding Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910004613 CdTe Inorganic materials 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- JQPIKACKMZSIJX-UHFFFAOYSA-N aluminum magnesium barium(2+) oxygen(2-) Chemical compound [O-2].[Al+3].[Mg+2].[Ba+2] JQPIKACKMZSIJX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910052919 magnesium silicate Inorganic materials 0.000 claims description 3
- 239000000391 magnesium silicate Substances 0.000 claims description 3
- 235000019792 magnesium silicate Nutrition 0.000 claims description 3
- SYJBLFMEUQWNFD-UHFFFAOYSA-N magnesium strontium Chemical compound [Mg].[Sr] SYJBLFMEUQWNFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- -1 aluminoxynitride Chemical compound 0.000 claims description 2
- WBCBIKSEEYDRAF-UHFFFAOYSA-N [P].[Ba].[Ca] Chemical compound [P].[Ba].[Ca] WBCBIKSEEYDRAF-UHFFFAOYSA-N 0.000 claims 1
- 239000000843 powder Substances 0.000 abstract description 5
- 230000005284 excitation Effects 0.000 abstract description 3
- 238000005034 decoration Methods 0.000 abstract description 2
- 230000009102 absorption Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 244000283207 Indigofera tinctoria Species 0.000 description 1
- YBGZDTIWKVFICR-JLHYYAGUSA-N Octyl 4-methoxycinnamic acid Chemical class CCCCC(CC)COC(=O)\C=C\C1=CC=C(OC)C=C1 YBGZDTIWKVFICR-JLHYYAGUSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 229960004050 aminobenzoic acid Drugs 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 239000001506 calcium phosphate Substances 0.000 description 1
- 229910000389 calcium phosphate Inorganic materials 0.000 description 1
- 235000011010 calcium phosphates Nutrition 0.000 description 1
- OBJUXSBAKWEKRI-UHFFFAOYSA-K calcium;barium(2+);phosphate Chemical compound [Ca+2].[Ba+2].[O-]P([O-])([O-])=O OBJUXSBAKWEKRI-UHFFFAOYSA-K 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000009331 sowing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
- C09K11/621—Chalcogenides
- C09K11/623—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/65—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing carbon
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of burst of ultraviolel white LED lamp structure, including being in totally fusiform lamp body, lamp body is in divergent shape transition from the left and right sides to upper and lower both sides, the inner at left and right sides of lamp body has one piece of substrate respectively, two substrates install one group of UV LED chip to inner side respectively, respectively inwards covered with blue fluorescent glue and yellow fluorescent glue, the blue fluorescent glue, yellow fluorescent glue are passed through by blue phosphor, yellow fluorescent material respectively to be handled to obtain UV LED chip described in this two groups with adhesive process；On the inside of the lamp body UV absorption coating is coated with from the border of blue fluorescent glue and yellow fluorescent glue to upper and lower two side portions.Present invention incorporates gold-tinted quantum dot fluorescent glue and ripe blue light fluorescent RE powder, it is by ultraviolet excitation and is mixed into white light, and shape design is unique, has light disperse function, but low dispersion, very color reduction, there is high decoration and practical value applied to life.
Description
Technical field
The present invention relates to LED technology field, particularly a kind of burst of ultraviolel white LED lamp structure.
Background technology
At present, the LED technology of in the market is ripe, and commercial white light LEDs are received using launching 450-470 at present
The GaN base matter LED chip of rice blue light and the blue light of surface coating excite the aluminic acid of the fluorescent material, mainly cerium dopping of yellow emission
Yttrium fluorescent material.This commercial fluorescent material is there is also some shortcomings, the unstability of mainly poor color saturation and colour temperature.
Burst of ultraviolel white LED light source is to excite the fluorescent material of red, green, blue three primary colours assorted glimmering to produce by LED light
Light, remix what these fluorescence and LED light were realized.This white light LEDs refer to because three primary colours are various, thus with high colour developing
Number, high illumination effect, and adjustable color, and this fluorescence system is readily available.Therefore, the LED of burst of ultraviolel turns into
Current trend.The rear-earth-doped aluminosilicate of fluorescent material, nitride, the powder of silicate are the ripe systems of fluorescent material.
In addition, it is also required to set again corresponding to the ultraviolet source for exciting, the shell and internal structure of LED
Meter, to adapt to new mode of excitation and the releasable requirement of light.
The content of the invention
Goal of the invention：In order to solve the above problems, it is an object of the invention to provide a kind of burst of ultraviolel white LED lamp knot
Structure, become white light efficiently to mix a variety of colors light, so as to obtain higher colour index, and reduce ultraviolet source injury and
Side effect.
The content of the invention：A kind of burst of ultraviolel white LED lamp structure, including overall be in fusiform lamp body, lamp body from or so
Two to descend both sides on the side be in divergent shape transition, and the inner at left and right sides of lamp body has one piece of substrate respectively, and two substrates divide to inner side
One group of UV LED chip is not installed, UV LED chip described in this two groups respectively inwards covered with blue fluorescent glue and yellow fluorescent glue,
The blue fluorescent glue, yellow fluorescent glue are passed through by blue phosphor, yellow fluorescent material respectively to be handled to obtain with adhesive process；On the inside of the lamp body
UV absorption coating is coated with from the border of blue fluorescent glue and yellow fluorescent glue to upper and lower two side portions.
Preferably, the material of the lamp body is low dispersion, concavees lens are shaped as.Low dispersion subtracts by dispersion
It is few, RGB is reduced, the light that concavees lens make to issue in LED dissipates.
Preferably, the barium zeopan that the blue phosphor, which is Eu2+, to be excited, barium magnesium aluminum oxide, alumina nitridation
One kind in thing, strontium magnesium silicate, strontium beryllium oxychlorination things, barium calcium phosphate.Eu2+Several mineral send blue light more than exciting
Efficiency high, photochromic pure and stably, technology maturation.
Preferably, the yellow fluorescent material is the cladding CdSe quantum dot of shell structure, CdTe quantum, CuInS quantum dots,
One kind in graphene quantum dot.The yellow fluorescence quantum efficiency of several quantum dots is high above, and cladding shell structure is for quantum
It is more stable that point runs into various adverse environments.
Further, the shell structure of the quantum dot cladding of the yellow fluorescent material is ZnS, CdS, SiO2In one kind.Encasement
The transmitting optical power level of structure is higher than the transmitting optical power level of nuclear structure, and so as to the protection shell structure stablized, and green glow will
The shell structure emission level asked is higher than corresponding to feux rouges.
Preferably, the lamp body up and down both sides be in outward bulge shaped form, the width of lamp body both sides up and down, in the middle part of it
Width is 1.4-1.7 times of its both ends width.The width diverse location change of both sides and the narrow shape in intermediate drum both ends above and below lamp body
Shape is advantageous to assembled between the diverging of its light and multiple LEDs.
Further, the Abbe number of the low dispersion is more than 68.5.The big dispersion of Abbe number is small, and 68.5 equivalent to Chengdu
The dispersion of light production FK-61 eyeglasses, has been low dispersion standard, color rendition natural reality.
The beneficial effects of the present invention are：A kind of burst of ultraviolel white LED lamp structure of the present invention, deft design.Lamp body
Itself curve Shape design and enclosed inside substrate and the mode novel and unique of fluorescent material；Concavees lens and the design energy of low dispersion
The scope for enough sowing light is bigger, and color rendition is truer；UV absorption coating absorb it is unnecessary not using or fluorescent material decline
The part ultraviolet light spilt after subtracting；The CdSe quantum dot of cladding shell structure, CdTe quantum, CuInS quantum dots, graphene quantum
Point is used as gold-tinted quantum dot, and emission peak is controllable, and quantum efficiency is high；Rare earth blue light fluorescent powder obtained it is commonly used, it is ultraviolet swash
Efficiency high, the long lifespan of blue light-emitting；This two kinds of photochromic intensities and allotment are readily obtained the white light LEDs of high quality.This hair
Bright to combine gold-tinted quantum dot fluorescent glue and ripe blue light fluorescent RE powder, it is by ultraviolet excitation and is mixed into white light,
Shape design is unique, has light disperse function, but low dispersion, very coloured silk reduce, and have high decoration and reality applied to life
With value.
Specific implementation
Fig. 1 is the structural representation of the embodiment of the present invention.
In figure：1- lamp bodies, 2- substrates, 3- UV LED chips, 4- indigo plant fluorescent glues, 5- Huang fluorescent glues, 6- UV absorptions apply
Layer, 7- reflecting optics.
Embodiment
In order to illustrate more clearly of the embodiment of the present application or technical scheme of the prior art, letter will be made to embodiment below
Singly introduce.
Such as Fig. 1, a kind of burst of ultraviolel white LED lamp structure, including overall is in fusiform lamp body 1, the material of the lamp body 1
Matter is low dispersion, is shaped as concavees lens, and the Abbe number of the low dispersion is more than 68.5, and preferably Chengdu light produces
FK-61, Japan small original FPL-51, FPL-53；
Lamp body 1 is in divergent shape transition from the left and right sides to upper and lower both sides, lamp body about 1 both sides be in outward bulge shaped form, lamp body 1
The width of upper and lower both sides, the width in the middle part of it are 1.4-1.7 times of its both ends width, and the inner side of lamp body 1 is from left and right ends to centre
Some reflecting optics are distributed with, the inner of the left and right sides of lamp body 1 has one piece of substrate 2 respectively, and two substrates 2 are installed respectively to inner side
One group of UV LED chip 3, UV LED chip 3 described in this two groups respectively inwards side covered with blue fluorescent glue 4 and yellow fluorescent glue 5,
The blue fluorescent glue 4, yellow fluorescent glue 5 are passed through by blue phosphor, yellow fluorescent material respectively to be handled to obtain with adhesive process；The blue fluorescence
Powder is Eu2+Barium zeopan, barium magnesium aluminum oxide, aluminoxynitride, strontium magnesium silicate, strontium beryllium oxychlorination things, the barium excited
One kind in calcium phosphate, the yellow fluorescent material is the cladding CdSe quantum dot of shell structure, CdTe quantum, CuInS quantum dots,
One kind in graphene quantum dot, the shell structure of the quantum dot cladding of the yellow fluorescent material is ZnS, CdS, SiO2In one kind；
The inner side of lamp body 1 is coated with UV absorption from the border of blue fluorescent glue 4 and yellow fluorescent glue 5 to upper and lower two side portions and applied
Layer 6, the UV absorption coating 6 include the combination for absorbing UVA and UVB ultraviolets respectively of compounding, preferably aminobenzoic acid
And its mixture of esters and Methoxycinnamate class.
Above example is only illustrating the preferred technical solution of the present invention, it is noted that for the general of the art
For logical technical staff, under the premise without departing from the principles of the invention, some improvement made or equivalent substitution, this is accordingly to be regarded as
The protection domain of invention, it should cover in scope of the presently claimed invention.
Claims (7)
- A kind of 1. burst of ultraviolel white LED lamp structure, it is characterised in that including it is overall be in fusiform lamp body, lamp body from or so Two to descend both sides on the side be in divergent shape transition, and the inner at left and right sides of lamp body has one piece of substrate respectively, and two substrates divide to inner side One group of UV LED chip is not installed, UV LED chip described in this two groups respectively inwards covered with blue fluorescent glue and yellow fluorescent glue, The blue fluorescent glue, yellow fluorescent glue are passed through by blue phosphor, yellow fluorescent material respectively to be handled to obtain with adhesive process；On the inside of the lamp body UV absorption coating is coated with from the border of blue fluorescent glue and yellow fluorescent glue to upper and lower two side portions.
- A kind of 2. burst of ultraviolel white LED lamp structure according to claim 1, it is characterised in that the material of the lamp body For low dispersion, concavees lens are shaped as.
- 3. a kind of burst of ultraviolel white LED lamp structure according to claim 1, it is characterised in that the blue phosphor is Eu2+Barium zeopan, barium magnesium aluminum oxide, aluminoxynitride, strontium magnesium silicate, strontium beryllium oxychlorination things, the barium calcium phosphorus excited One kind in hydrochlorate.
- 4. a kind of burst of ultraviolel white LED lamp structure according to claim 1, it is characterised in that the yellow fluorescent material is Coat one kind in the CdSe quantum dot of shell structure, CdTe quantum, CuInS quantum dots, graphene quantum dot.
- 5. a kind of burst of ultraviolel white LED lamp structure according to claim 4, it is characterised in that the yellow fluorescent material The shell structure of quantum dot cladding is ZnS, CdS, SiO2In one kind.
- 6. a kind of burst of ultraviolel white LED lamp structure according to claim 1, it is characterised in that two above and below the lamp body Side is in the shaped form of outward bulge, and the width of the upper and lower both sides of lamp body, the width in the middle part of it is 1.4-1.7 times of its both ends width.
- A kind of 7. burst of ultraviolel white LED lamp structure according to claim 2, it is characterised in that the low dispersion Abbe number be more than 68.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710718803.4A CN107507902A (en) | 2017-08-21 | 2017-08-21 | A kind of burst of ultraviolel white LED lamp structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710718803.4A CN107507902A (en) | 2017-08-21 | 2017-08-21 | A kind of burst of ultraviolel white LED lamp structure |
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| Publication Number | Publication Date |
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| CN107507902A true CN107507902A (en) | 2017-12-22 |
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| CN201710718803.4A Pending CN107507902A (en) | 2017-08-21 | 2017-08-21 | A kind of burst of ultraviolel white LED lamp structure |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090267509A1 (en) * | 2008-04-25 | 2009-10-29 | Broitzman Troy R | Led lighting system for direct form, fit, and function replacement of existing incandescent, halogen, mercury vapor, high pressure sodium and compact fluorscent systems |
| CN102933366A (en) * | 2010-02-19 | 2013-02-13 | 迈图高新材料有限责任公司 | Integral irradiation unit |
| CN106396364A (en) * | 2016-08-31 | 2017-02-15 | 中山火炬职业技术学院 | Preparation method of low ultraviolet radiation lamp glass bulb |
| CN104851956B (en) * | 2015-04-20 | 2017-07-18 | 绍兴文理学院 | A kind of near ultraviolet excited white light LED light source |
-
2017
- 2017-08-21 CN CN201710718803.4A patent/CN107507902A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090267509A1 (en) * | 2008-04-25 | 2009-10-29 | Broitzman Troy R | Led lighting system for direct form, fit, and function replacement of existing incandescent, halogen, mercury vapor, high pressure sodium and compact fluorscent systems |
| CN102933366A (en) * | 2010-02-19 | 2013-02-13 | 迈图高新材料有限责任公司 | Integral irradiation unit |
| CN104851956B (en) * | 2015-04-20 | 2017-07-18 | 绍兴文理学院 | A kind of near ultraviolet excited white light LED light source |
| CN106396364A (en) * | 2016-08-31 | 2017-02-15 | 中山火炬职业技术学院 | Preparation method of low ultraviolet radiation lamp glass bulb |
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Application publication date: 20171222 |
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| RJ01 | Rejection of invention patent application after publication |