CN107493139A - Digital optical receiver - Google Patents

Digital optical receiver Download PDF

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Publication number
CN107493139A
CN107493139A CN201710687769.9A CN201710687769A CN107493139A CN 107493139 A CN107493139 A CN 107493139A CN 201710687769 A CN201710687769 A CN 201710687769A CN 107493139 A CN107493139 A CN 107493139A
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China
Prior art keywords
output end
input
circuit
layers
electrically connect
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CN201710687769.9A
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Chinese (zh)
Inventor
张捷
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Xian Cresun Innovation Technology Co Ltd
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Xian Cresun Innovation Technology Co Ltd
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Priority to CN201710687769.9A priority Critical patent/CN107493139A/en
Publication of CN107493139A publication Critical patent/CN107493139A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/69—Electrical arrangements in the receiver
    • H04B10/691—Arrangements for optimizing the photodetector in the receiver

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)

Abstract

The present invention relates to a kind of digital optical receiver, including：Horizontal PIN structural photodetector, its first input end input optical signal；Preamplifier, its input electrically connect with the output end of the horizontal PIN structural photodetector；Main amplifier, its first input end electrically connect with the output end of the preamplifier；Equalization filtering circuit, its input electrically connect with the output end of the main amplifier；Automatic gain control circuit, its input electrically connect with the first output end of the equalization filtering circuit, and its output end electrically connects with the second input of the main amplifier；Decision device, its first input end electrically connect with the output end of the equalization filtering circuit, and its output end exports the output electric signal of the photoreceiver；Clock extracting circuit, its input electrically connect with the output end of the equalization filtering circuit, and its output end electrically connects with the second input of the decision device.Digital optical receiver of the present invention is by using high performance horizontal PIN structural photodetector, and its photoelectric transformation efficiency is high, and cost is low, performance is good.

Description

Digital optical receiver
Technical field
The invention belongs to optoelectronic information technology technical field, and in particular to a kind of digital optical receiver.
Background technology
Fiber optic communication (Fiber-optic communication), also makees optical-fibre communications.Fiber optic communication is to be used as letter using light Carrier is ceased, using optical fiber as the communication mode of transmission medium, converts the electrical signal to optical signal first, then believe light through optical fiber Number transmitted, belong to one kind of wire communication.Most basic optical fiber telecommunications system is by optical sender, photoreceiver, optical fiber cable Road, repeater and passive device etc. form.Wherein optical sender, which is responsible for transposing the signals into, is suitable for what is transmitted on optical fiber Optical signal, fibre circuit is responsible for transmission signal, and photoreceiver is responsible for receiving optical signal, and therefrom extracts information, then changes Into electric signal, the information such as corresponding speech, image, data are finally obtained.The photoelectric transformation efficiency of photoreceiver is to influence light to connect The important indicator of receipts machine performance, therefore how to develop high performance photoreceiver and have become important subject.
The content of the invention
In order to solve the above-mentioned problems in the prior art, the invention provides a kind of digital optical receiver, including：
Horizontal PIN structural photodetector, its first input end input optical signal；
Preamplifier, its input electrically connect with the output end of the horizontal PIN structural photodetector；
Main amplifier, its first input end electrically connect with the output end of the preamplifier；
Equalization filtering circuit, its input electrically connect with the output end of the main amplifier；
Automatic gain control circuit, its input are electrically connected with the first output end of the equalization filtering circuit, and it is exported End electrically connects with the second input of the main amplifier；
Decision device, its first input end electrically connect with the output end of the equalization filtering circuit, described in the output of its output end The output electric signal of photoreceiver；
Clock extracting circuit, its its input electrically connect with the output end of the equalization filtering circuit, its output end and institute State the second input electrical connection of decision device.
In one embodiment of the invention, in addition to bias control circuit, the output end of the bias control circuit with The second input electrical connection of the photodetector.
In one embodiment of the invention, the preamplifier is bipolar transistor preamplifier.
In one embodiment of the invention, the main amplifier is power amplifier.
In one embodiment of the invention, the equalization filtering circuit output model is raised cosine spectrum pulse.
In one embodiment of the invention, the decision device includes decision circuit and code forms circuit, wherein,
The first input end of the decision circuit electrically connects with the output end of the equalization filtering circuit；
The input that the code forms circuit electrically connects with the output end of the decision circuit；
The code forms the output electric signal of the output end output photoreceiver of circuit.
In one embodiment of the invention, the horizontal PIN structural photodetector includes：
SOI substrate 11, including Si substrate layers 110, the SiO stacked gradually2Layer 120 and Si layers, the Si layers include level Direction is arranged in order n-type doping area 111, i types area 112 and p-type doped region 113；
Crystallization Ge layers 12, it is arranged on the surface of i types area 112.
In one embodiment of the invention, in addition to metal electrode 13, the metal electrode 13 are respectively arranged at the N On type doped region 111 and the p-type doped region 113.
In one embodiment of the invention, in addition to it is arranged on the crystallization Ge layers 12 and the Si layers 130 SiO2Passivation layer 14.
In one embodiment of the invention, the crystallization Ge layers 12 include Ge seed layers and Ge main bodys.
The embodiment of the present invention has the beneficial effect that this digital optical receiver by using high performance horizontal PIN structural photoelectricity Detector, its photoelectric transformation efficiency is high, and cost is low, performance is good.
Brief description of the drawings
Fig. 1 is a kind of structural representation of photoreceiver provided in an embodiment of the present invention；
Fig. 2 is decision device structural representation in a kind of photoreceiver provided in an embodiment of the present invention；
Fig. 3 is a kind of structural representation of horizontal PiN structures photodetector provided in an embodiment of the present invention；
Fig. 4 a- Fig. 4 j are that a kind of preparation technology of horizontal PiN structures photodetector provided in an embodiment of the present invention illustrates Figure；
Fig. 5 is a kind of schematic diagram of laser crystallization technique provided in an embodiment of the present invention.
Embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to This.
Embodiment one
Fig. 1, Fig. 2, Fig. 3 are referred to, Fig. 1 is a kind of structural representation of photoreceiver provided in an embodiment of the present invention；Fig. 2 For decision device structural representation in a kind of photoreceiver provided in an embodiment of the present invention；Fig. 3 is provided in an embodiment of the present invention one The structural representation of the horizontal PiN structures photodetector of kind；The photoreceiver includes：
Horizontal PIN structural photodetector, its first input end input optical signal；
Preamplifier, its input electrically connect with the output end of the horizontal PIN structural photodetector；
Main amplifier, its first input end electrically connect with the output end of the preamplifier；
Equalization filtering circuit, its input electrically connect with the output end of the main amplifier；
Automatic gain control circuit, its input are electrically connected with the first output end of the equalization filtering circuit, and it is exported End electrically connects with the second input of the main amplifier；
Decision device, its first input end electrically connect with the output end of the equalization filtering circuit, described in the output of its output end The output electric signal of photoreceiver；
Clock extracting circuit, its input electrically connect with the output end of the equalization filtering circuit, its output end with it is described The second input electrical connection of decision device.
Wherein, in addition to bias control circuit, the of the output end of the bias control circuit and the photodetector Two inputs electrically connect.
Wherein, the preamplifier is bipolar transistor preamplifier.
Wherein, the main amplifier is power amplifier.
Wherein, the equalization filtering circuit output model is raised cosine spectrum pulse.
Wherein, the decision device includes decision circuit and code forms circuit, wherein,
The first input end of the decision circuit electrically connects with the output end of the equalization filtering circuit；
The input that the code forms circuit electrically connects with the output end of the decision circuit；
The code forms the output electric signal of the output end output photoreceiver of circuit.
Wherein, the horizontal PIN structural photodetector includes：
SOI substrate 11, including Si substrate layers 110, the SiO stacked gradually2Layer 120 and Si layers, the Si layers include level Direction is arranged in order n-type doping area 111, i types area 112 and p-type doped region 113；
Crystallization Ge layers 12, it is arranged on the surface of i types area 112.
Wherein, in addition to metal electrode 13, the metal electrode 13 are respectively arranged at the n-type doping area 111 and the P On type doped region 113.
Wherein, in addition to the SiO that is arranged on the crystallization Ge layers 12 and the Si layers 1302Passivation layer 14.
Wherein, the crystallization Ge layers 12 include Ge seed layers and Ge main bodys.
Wherein, the crystallization Ge layers are by the laser Ge layers that crystallization process makes again, refer to Fig. 5, and Fig. 5 is the present invention A kind of schematic diagram for laser crystallization technique that embodiment provides.Crystallization process is a kind of method of thermal induced phase transition crystallization to laser again, By the process of laser crystallization fusing recrystallization, big crystal grain can be grown, the higher Ge films of crystallization degree can be obtained, greatly The defects of big relatively low Ge materials.
Photoreceiver in the present embodiment at work, by optical sender through optical fiber be transmitted through Lai optical signal pass through transverse direction PIN structural photodetector is changed into electric signal, and electric signal is amplified to obtain one-level amplification electric signal by preamplifier, The one-level amplified signal that preamplifier exports is continued to be amplified to signal level required for decision device by main amplifier i.e. Two level amplifies electric signal；Meanwhile when the electric signal of photodetector output rises and falls, pass through automatic gain control circuit pair The gain of main amplifier is adjusted, so that the two level amplification electrical signal amplitude of main amplifier output is not inputted in certain limit One-level amplification electric signal influence；Two level amplification electric signal waveform of output signal after equalization filtering circuit is changed into favourable Interference is not produced, it is necessary to which the waveform is adjudicated adjacent code in the waveform such as raised cosine spectrum pulse of judgement, the output of terminal decision device Signal signal regeneration carried out after decision device obtain final output electric signal.
The embodiment of the present invention has the beneficial effect that：
1st, by using high performance horizontal PIN structural photodetector, the photoreceiver photoelectric transformation efficiency of preparation is high, Cost is low, performance is good；
2nd, horizontal PIN structural photodetector processing step is simple, and process cycle is short, and heat budget is low；
3rd, using laser, crystallization process makes crystallization Ge layers again, and dislocation density, the surface that can effectively reduce Ge/Si interfaces are thick Rugosity, boundary defect, Ge/Si interfacial characteristicses are lifted, so that photodetector possesses high-speed response rate and high-quantum efficiency Characteristic.
Embodiment two
It is a kind of horizontal PiN structures photodetection provided in an embodiment of the present invention to refer to Fig. 4 a- Fig. 4 j, Fig. 4 a- Fig. 4 j The preparation technology schematic diagram of device；The present embodiment is on the basis of above-described embodiment, the preparation to horizontal PiN structures photodetector Method is described in detail as follows：
S101, substrate are chosen.As shown in fig. 4 a, it is original material to choose monocrystalline silicon Si substrates 001；
It is prepared by S102, SOI substrate.As shown in Figure 4 b, it is 1.8 × 10 from O+ dosage18cm-3Carry out noting oxygen isolation, then High annealing is carried out, forms the SiO of 1 μ m-thick2The SOI substrate of Si layers 003 thick 002 and 300nm of layer.
S103, p-type ion implanting.As illustrated in fig. 4 c, the first thick SiO of 200nm are deposited2Protective layer 004, selectivity are carved Erosion, B ion implantings, form 1 × 1020cm-3P-type doped region 005.
S104, N-type ion implanting.As shown in figure 4d, the 2nd SiO is etched away2Protective layer 004,200nm thickness is deposited again 2nd SiO2Protective layer 006, selective etch, P ion injection, form 1 × 1020cm-3N-type doping area 007, etches away second SiO2Protective layer 006.The not middle doped portion of Si floor 003 is i types area.
S105, undoped with Si regioselectivity outer layer growth Ge materials, including Ge inculating crystal layers 007 and Ge body layers 008。
S1051, Ge inculating crystal layer 008 grows.As shown in fig 4e, at a temperature of 275 DEG C~325 DEG C, life in CVD techniques is utilized Long 40~50nm Ge inculating crystal layers 007；
S1052, Ge body layer 009 grows.As shown in fig. 4f, at a temperature of 500 DEG C~600 DEG C, using CVD techniques The Ge body layers 009 of the superficial growth 250nm of Ge inculating crystal layers 008；
S106, protective layer are SiO2Preparation.As shown in figure 4g, using CVD techniques on the surface of Ge body layers 008 Deposit the SiO of 150nm the 3rd2Protective layer 010；
Crystallization and the protective layer etching of S107, Ge epitaxial layer, such as Fig. 4 h.The single crystal Si substrate 001, the Ge will be included Inculating crystal layer 007, the Ge body layers 009 and the 3rd SiO2The whole backing material of protective layer 010 is heated to 700 DEG C, even It is continuous to use whole backing material described in laser technology crystallization, wherein, optical maser wavelength 808nm, the μ m of laser spot size 100 100 μm, laser power 1.5kW/cm2, time for exposure 40ms, natural cooling formation crystallization Ge layers 011.Relatively low Ge materials Dislocation density and surface roughness, Ge/Si interface qualities are improved, dark current lifting quantum efficiency can be effectively reduced.Then it is sharp The SiO in Fig. 4 g is etched with dry etch process2Protective layer 010.
It is prepared by S108, metal contact hole.As shown in figure 4i, the thick SiO of 300~350nm are deposited2Passivation layer 012, isolate platform Face makes electrical contact with extraneous.Contact hole is etched, falls specified SiO with etching technics selective etch2Passivation layer 012 forms metal contact Hole.
It is prepared by S109, metal interconnection.As shown in figure 4j.The thick Cr/Au layers of 150~200nm are deposited using electron beam evaporation. The metal Cr/Au of selective eating away designated area is carved using etching technics, (CMP is carried out at planarization using chemically mechanical polishing Reason, form metal electrode 013.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to is assert The specific implementation of the present invention is confined to these explanations.For general technical staff of the technical field of the invention, On the premise of not departing from present inventive concept, some simple deduction or replace can also be made, should all be considered as belonging to the present invention's Protection domain.

Claims (10)

  1. A kind of 1. digital optical receiver, it is characterised in that including：
    Horizontal PIN structural photodetector, its first input end input optical signal；
    Preamplifier, its input electrically connect with the output end of the horizontal PIN structural photodetector；
    Main amplifier, its first input end electrically connect with the output end of the preamplifier；
    Equalization filtering circuit, its input electrically connect with the output end of the main amplifier；
    Automatic gain control circuit, its input electrically connect with the output end of the equalization filtering circuit, its output end with it is described The second input electrical connection of main amplifier；
    Decision device, its first input end electrically connect with the output end of the equalization filtering circuit, and its output end exports the light and connect The output electric signal of receipts machine；
    Clock extracting circuit, its input electrically connect with the output end of the equalization filtering circuit, its output end and the judgement The second input electrical connection of device.
  2. 2. photoreceiver according to claim 1, it is characterised in that also including bias control circuit, the bias voltage control The output end of circuit electrically connects with the second input of the photodetector.
  3. 3. photoreceiver according to claim 1, it is characterised in that the preamplifier is that bipolar transistor is preposition Amplifier.
  4. 4. photoreceiver according to claim 1, it is characterised in that the main amplifier is power amplifier.
  5. 5. photoreceiver according to claim 1, it is characterised in that the equalization filtering circuit output model is raised cosine Frequency spectrum pulse.
  6. 6. photoreceiver according to claim 1, it is characterised in that the decision device includes decision circuit and code forms electricity Road, wherein,
    The first input end of the decision circuit electrically connects with the output end of the equalization filtering circuit；
    The input that the code forms circuit electrically connects with the output end of the decision circuit；
    The code forms the output electric signal of the output end output photoreceiver of circuit.
  7. 7. photoreceiver according to claim 1, it is characterised in that the horizontal PIN structural photodetector includes：
    SOI substrate (11), including Si substrate layers (110), the SiO stacked gradually2Layer (120) and Si layers, the Si layers include N-type Doped region (111), i types area (112) and p-type doped region (113)；
    Crystallization Ge layers (12), it is arranged on i types area (112) surface.
  8. 8. photoreceiver according to claim 1, it is characterised in that also including metal electrode (13), the metal electrode (13) it is respectively arranged on the n-type doping area (111) and the p-type doped region (113).
  9. 9. photoreceiver according to claim 1, it is characterised in that also include being arranged at the crystallization Ge layers (12) and institute State the SiO on Si layers2Passivation layer (14).
  10. 10. photoreceiver according to claim 1, it is characterised in that the crystallization Ge layers (12) include Ge seed layers and Ge main bodys.
CN201710687769.9A 2017-08-11 2017-08-11 Digital optical receiver Pending CN107493139A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105306147A (en) * 2015-10-30 2016-02-03 苏州优康通信设备有限公司 Digital optical receiver
CN105405916A (en) * 2015-12-22 2016-03-16 中国科学院半导体研究所 Silicon-based wide spectrum detector and preparation method therefor
CN206023793U (en) * 2016-08-22 2017-03-15 江苏通航电子科技网络有限公司 Digital optical receiver

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105306147A (en) * 2015-10-30 2016-02-03 苏州优康通信设备有限公司 Digital optical receiver
CN105405916A (en) * 2015-12-22 2016-03-16 中国科学院半导体研究所 Silicon-based wide spectrum detector and preparation method therefor
CN206023793U (en) * 2016-08-22 2017-03-15 江苏通航电子科技网络有限公司 Digital optical receiver

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JIE ZHANG 等: "Modeling of continuous wave laser melting of germanium epitaxial films on silicon substrates", 《MATERIALS EXPRESS》 *
ZIHENG LIU 等: "Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering", 《THIN SOLID FILMS》 *
黄志伟: "激光退火改善Si上外延Ge晶体质量", 《第十一届全国硅基光电子材料及器件研讨会论文摘要集》 *

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Application publication date: 20171219