CN107490933A - A kind of photomask cleaning - Google Patents

A kind of photomask cleaning Download PDF

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Publication number
CN107490933A
CN107490933A CN201710728019.1A CN201710728019A CN107490933A CN 107490933 A CN107490933 A CN 107490933A CN 201710728019 A CN201710728019 A CN 201710728019A CN 107490933 A CN107490933 A CN 107490933A
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CN
China
Prior art keywords
photomask
cleaning
protective cover
high purity
purity water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710728019.1A
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Chinese (zh)
Inventor
张坤
刘藩东
夏志良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yangtze Memory Technologies Co Ltd
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Yangtze Memory Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yangtze Memory Technologies Co Ltd filed Critical Yangtze Memory Technologies Co Ltd
Priority to CN201710728019.1A priority Critical patent/CN107490933A/en
Publication of CN107490933A publication Critical patent/CN107490933A/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting

Abstract

A kind of photomask cleaning, including：Demoulding；First photomask is fixed on cleaning machine, then the protective cover with vacuum protection cover suction nozzle is placed on optical mask plate, vacuumized, when pressure reaches 10‑1~10‑3Stop vacuumizing during Pa；Using the cull in dry method or/and method for cleaning photo mask by wet, photomask is rinsed for several times with high purity water after having cleaned；Gas is injected into protective cover separates protective cover and photomask, then removes photomask removing glue protective cover；High purity water ultrasonic irrigation photomask is first used, then uses up irradiation photomask, light irradiation and ultrasonic irrigation is repeated for several times, finally uses high purity water ultrasonic irrigation photomask again.The advantage of the invention is that being remarkably improved photomask service life, light shield cost is greatly reduced.

Description

A kind of photomask cleaning
Technical field
The present invention relates to a kind of photomask cleaning, and in particular to a kind of photomask cleaning.
Background technology
Photomask is figure mother matrix used in photoetching process in field of microelectronic fabrication, is by lighttight shading film Mask graph is formed on the transparent substrate, and is transferred the graphic to by exposure on product substrate.It is ultra-large for manufacturing Integrated circuit (VLSI) and ULSI (ULSI), photomask technology is more and more important, usual a set of advanced light Mask needs million U.S. dollars.When manufacturing photomask, SO can be remained on mask4 2-And NH4+, in 193nm or 193nm during exposure Under the irradiation of following wavelength (such as 172nm), haze defect (haze) can be increasingly generated on mask plate, by haze defect composition Analysis, ammonium sulfate (NH4)2SO4) compound the problem of being considered as most important haze defect.Therefore, it is necessary to periodic cleaning Photomask is to remove the Haze on mask.In order to prevent pollution of the environment to photomask, one layer can be typically covered on mask plate Film, substantial amounts of adhesive can be remained on mask plate after striping, due to present cleaning defect and photomask required precision, General mask plate, which cleans 3 times or so, just needs making sheet again, causes to expend huge expense, it is seen that photomask cleaning is photomask One of most important processing step in manufacturing process.
At present, photomask cleaning have ignored cleaning agent to phase shift film (MoSiON), light blocking film (Cr/CrO) and glue The Different Effects of mixture, for example, photomask in the prior art, such as Fig. 1, including 1- photomasks, 4- culls, 6- films, by de- After mould, as Fig. 2, including 1- photomasks, 4- culls are then clear from chemical cleaning solution in conventional semiconductor wet-cleaned technology After washing photomask, the ion of high concentration can be not only remained on the photomask, be shown in Table 1, and whole photomask region is all cleaned One time so that effective photomask region is difficult to protect in cleaning.
The high concentration ion (ppb=μ g/l) remained on table 1- photomasks
Ion Cr- NO2- NO3- SO4 2- Na+ NH4 + K+
As a result 2.50 0.15 0.23 62.99 2.16 6.44 0.22
Detectable limit 0.05 0.08 0.08 0.06 0.02 0.01 0.03
Select conventional photomask cleaning fluid, such as SPM (H simultaneously2SO4、H2O2And H2O mixed solutions), it is organic for removing Pollutant；HF or DHF (HF of dilution), is mainly used in corrosion oxidation film；SC1 (or be APM, NH3H2O、H2O2And H2O's is mixed Close solution), be mainly used in remove particle, while also can organics removal and metal pollutant, HPM (HCl, H2O2And H2O's Mixed solution), it is mainly used in removing metal pollutant；SOM(H2SO4、O3And H2O mixed solution), for remove organic matter, Metal pollutant simultaneously reduces H2SO4Dosage.Wherein, SPM and SC1 is that main ion is residual in these traditional photomask cleaning fluids Source is stayed, also easily generates haze defect (haze).
To sum up, for Integrated circuit manufacturers, there is an urgent need to one kind both can effectively suppress to produce mist on the photomask Shape defect, the cleaning method of the cleaning frequency of photomask can be extended again, so as to improve photomask service life, reduce photomask dimension Cost is protected, improves the yield rate of chip.
The content of the invention
The purpose of the present invention is achieved through the following technical solutions, and a kind of photomask cleaning, is comprised the following steps：
Demoulding：Remove the protective film of photomask surface；
Vacuumize：First photomask is fixed on cleaning machine, then put the protective cover with vacuum protection cover suction nozzle On optical mask plate, vacuumize, when pressure reaches 10-1~10-3Stop vacuumizing during Pa, due to protective cover and the sky of photomask Chamber is in vacuum state, and vacuum protection cover can be adsorbed firmly on the photomask；
Go colloid：Using the cull in dry method or/and method for cleaning photo mask by wet, photomask is rinsed with high purity water after having cleaned For several times；
Inflate, remove protective cover：Gas is injected into protective cover separates protective cover and photomask, then removes photomask Glue protective cover is removed；
Cleaning：High purity water ultrasonic irrigation photomask is first used, then uses up irradiation photomask, repeats illumination and ultrasonic irrigation number It is secondary, allow the ion of optical mask plate remained on surface fully to separate out, finally use high purity water ultrasonic irrigation photomask again.
Further, the guarantor of photomask surface is removed from 5~500N, perpendicular to photomask surface, slow upward pulling force Cuticula.
Further, the protective cover size is less than protective film size, and is more than photomask pattern border, and the vacuum is protected Shield suction nozzle lower end opens up equally distributed vacuum suction hole, and according to the size on protective cover and photomask pattern border, it is necessary to It is 0.5mm~2cm according to specific size selection protective cover thickness.
Further, the material of the protective cover is quartz glass or polytetrafluoroethylene (PTFE).
Further, the dry method cleaning is plasma (preferably O2Plasma, O3Plasma and O2And O3Mixing etc. Combinations more than one or both of gas ions, wherein plasma density value are 106~1020cm-3, temperature be 50C~ 400C, pressure are 5mtorr~500mtorr) cleaning, it can greatly prevent SO4 2-And NH4+Residual, the wet-cleaning is Organic solvent (dense H2S2O4Or dense H2S2O4And H2O2Combination (H2S2O4：H2O2=10/1~1/10)) clean, can greatly prevent SO is stopped4 2-And NH4+Residual；1~the 30min of scavenging period (preferably 10~15min)；The washing time is 2~10 times (preferably 3~5 times).
Further, stop being passed through gas when injecting pressure and reaching 1~1.5 atmospheric pressure, the gas be pure nitrogen gas or Air.
Further, the 1~10min of high purity water ultrasonic irrigation time (preferably 3~5min), ultrasonic wave work(frequency be 10~ 130KHz (preferably 50~100KHz), the wavelength of illumination are 0.2~200 micron (preferably 20~100 microns), light application time 10 ~60min (preferably 20~40min), number of repetition are 2~10 times (preferably 3~5 times).
The present invention employs substep cleaning photomask according to the chemical property of cleaned material and the required precision of photomask, first Cull is first cleaned, effective photomask region is protected using vacuum protection cover in cleaning process, greatly eliminates effective light and cover Influence of ion residues of the mould region in cleaning process to mask material；Then by illumination and ultrasonic irrigation, residual is promoted The removal of ion is without damaging photomask, and so as to effectively control the ion residues on optical mask plate surface, to reach, preventing and treating is vaporific to be lacked Fall into (haze).From there through the combination of the reasonable effective cleaning of two steps, the usage time of photomask is significantly increased.
The advantage of the invention is that being remarkably improved photomask service life, cost is greatly reduced.
Brief description of the drawings
By reading the detailed description of hereafter preferred embodiment, it is various other the advantages of and benefit it is common for this area Technical staff will be clear understanding.Accompanying drawing is only used for showing the purpose of preferred embodiment, and is not considered as to the present invention Limitation.And in whole accompanying drawing, identical part is denoted by the same reference numerals.In the accompanying drawings：
Fig. 1 is photomask side view in the prior art.
Fig. 2 is photomask top view after the demoulding in the prior art.
Fig. 3 is photomask cleaning process flow figure of the present invention.
Fig. 4 is photomask top view after the present invention demoulding.
Fig. 5 is protective cover top view of the present invention.
In figure, 1- photomasks, 2- vacuum protection covers, 3- vacuum suctions hole, 4- culls, 5- photomask patterns border, 6- is thin Film, 7- vacuum protection cover suction nozzles.
Embodiment
The illustrative embodiments of the disclosure are more fully described below with reference to accompanying drawings.Although this public affairs is shown in accompanying drawing The illustrative embodiments opened, it being understood, however, that may be realized in various forms the disclosure without the reality that should be illustrated here The mode of applying is limited.Conversely, there is provided these embodiments are to be able to be best understood from the disclosure, and can be by this public affairs The scope opened completely is communicated to those skilled in the art.
Embodiment 1
A kind of photomask cleaning, as shown in figure 3, including：
(1) demoulding：The protection of photomask surface is removed from 10N, perpendicular to the surface of photomask 1, slow upward pulling force Film 6；
(2) vacuumize：First photomask 1 is fixed on cleaning machine, then by the quartz with vacuum protection cover suction nozzle 7 Protecting glass 2 is placed on optical mask plate, wherein, the size of protective cover 2 is less than the size of protective film 6, and is more than photomask Graphic limit 5, the lower end of vacuum protection cover suction nozzle 7 opens up equally distributed vacuum suction hole 3, and is covered according to protective cover and light The size of mould graphic limit, the thickness of adjustment vacuum protection cover 2 is 1cm, is vacuumized, when pressure reaches 10-2Stop taking out very during Pa It is empty；Photomask top view after the demoulding, see Fig. 4, including 1- photomasks, 2- vacuum protection covers, 3- vacuum suctions hole, 4- culls, 5- Photomask pattern border, 6- films, protective cover top view, see Fig. 5, including 3- vacuum suctions hole.
(3) colloid is gone：Utilize O2Plasma (plasma density value:1015cm-3, temperature:100C, pressure: 150mtorr) the cull 4 cleaned on mask, clean 10min；After having cleaned photomask is rinsed with high purity water 5 times；
(4) inflate, remove protective cover：Pure N is injected into vacuum protection cover 22, as the pure N of injection2Pressure reaches 1.2 air Stop being passed through pure N during pressure2, vacuum protection cover 2 and photomask 1 are separated, photomask removing glue protective cover 2 is removed；
(5) clean：First continue 5min with high purity water ultrasonic irrigation photomask 1, ultrasonic wave work(frequency is 50KHz, Ran Houyong Wavelength continues 20min for the light irradiation photomask 1 of 20 micrometer ranges, repeats illumination and ultrasonic irrigation 3 times, finally uses high purity water again Ultrasonic irrigation photomask 1 continues 5min.
Embodiment 2
A kind of photomask cleaning, including：
(1) demoulding：The protection of photomask surface is removed from 50N, perpendicular to the surface of photomask 1, slow upward pulling force Film 6；
(2) vacuumize：First photomask 1 is fixed on cleaning machine, then by poly- four with vacuum protection cover suction nozzle 7 PVF protective cover 2 is placed on optical mask plate, wherein, the size of protective cover 2 is less than the size of protective film 6, and is covered more than light Mould graphic limit 5, the lower end of vacuum protection cover suction nozzle 7 open up equally distributed vacuum suction hole 3, and according to protective cover and light The size on mask graph border, the thickness of adjustment vacuum protection cover 2 is 1.5cm, is vacuumized, when pressure reaches 10-1Stop during Pa Vacuumize；
(3) colloid is gone：Utilize O3Plasma (plasma density value:1013cm-3, temperature:80C, pressure: 130mtorr) the cull 4 cleaned on mask, clean 15min；After having cleaned photomask is rinsed with high purity water 4 times；
(4) inflate, remove protective cover：Pure N is injected into vacuum protection cover 22, as the pure N of injection2When pressure reaches 1 atmospheric pressure Stopping is passed through pure N2, vacuum protection cover 2 and photomask 1 are separated, photomask removing glue protective cover 2 is removed；
(5) clean：First continue 3min with high purity water ultrasonic irrigation photomask 1, ultrasonic wave work(frequency is 100KHz, Ran Houyong Wavelength continues 40min for the light irradiation photomask 1 of 100 micrometer ranges, illumination and ultrasonic irrigation 3 times is repeated, finally again with high-purity Water ultrasonic irrigation photomask 1 continues 3min.
Embodiment 3
A kind of photomask cleaning, including：
(1) demoulding：The protection of photomask surface is removed from 100N, perpendicular to the surface of photomask 1, slow upward pulling force Film 6；
(2) vacuumize：First photomask 1 is fixed on cleaning machine, then by poly- four with vacuum protection cover suction nozzle 7 PVF protective cover 2 is placed on optical mask plate, wherein, the size of protective cover 2 is less than the size of protective film 6, and is covered more than light Mould graphic limit 5, the lower end of vacuum protection cover suction nozzle 7 open up equally distributed vacuum suction hole 3, and according to protective cover and light The size on mask graph border, the thickness of adjustment vacuum protection cover 2 is 0.5mm, is vacuumized, when pressure reaches 10-3Stop during Pa Vacuumize；
(3) colloid is gone：Utilize O2And O3Hybrid plasma (plasma density value:1014cm-3, temperature:85C, pressure: 150mtorr) the cull 4 cleaned on mask, clean 3min；After having cleaned photomask is rinsed with high purity water 1 time；
(4) inflate, remove protective cover：Air is injected into vacuum protection cover 2, when injection air pressure reaches 1.5 big Stop being passed through air during air pressure, separate vacuum protection cover 2 and photomask 1, photomask removing glue protective cover 2 is removed；
(5) clean：First continue 10min with high purity water ultrasonic irrigation photomask 1, ultrasonic wave work(frequency is 10KHz, Ran Houyong Wavelength continues 60min for the light irradiation photomask 1 of 0.2 micrometer range, illumination and ultrasonic irrigation 2 times is repeated, finally again with high-purity Water ultrasonic irrigation photomask 1 continues 1min.
Embodiment 4
A kind of photomask cleaning, including：
(1) demoulding：The protection of photomask surface is removed from 250N, perpendicular to the surface of photomask 1, slow upward pulling force Film 6；
(2) vacuumize：First photomask 1 is fixed on cleaning machine, then by the quartz with vacuum protection cover suction nozzle 7 Protecting glass 2 is placed on optical mask plate, wherein, the size of protective cover 2 is less than the size of protective film 6, and is more than photomask Graphic limit 5, the lower end of vacuum protection cover suction nozzle 7 opens up equally distributed vacuum suction hole 3, and is covered according to protective cover and light The size of mould graphic limit, the thickness of adjustment vacuum protection cover 2 is 2cm, is vacuumized, when pressure reaches 10-1Stop taking out very during Pa It is empty；
(3) colloid is gone：Utilize O2And O3Hybrid plasma (plasma density value:1014cm-3, temperature:80C, pressure: 150mtorr) and dense H2S2O4And H2O2(H2S2O4：H2O2=10/3) the cull 4 on combined type cleaning mask, 1min is cleaned；Clearly After washing photomask is rinsed with high purity water 10 times；
(4) inflate, remove protective cover：Air is injected into vacuum protection cover 2, when injection air pressure reaches 1.2 big Stop being passed through air during air pressure, separate vacuum protection cover 2 and photomask 1, photomask removing glue protective cover 2 is removed；
(5) clean：First continue 10min with high purity water ultrasonic irrigation photomask 1, ultrasonic wave work(frequency is 10KHz, Ran Houyong Wavelength continues 10min for the light irradiation photomask 1 of 0.2 micrometer range, illumination and ultrasonic irrigation 2 times is repeated, finally again with high-purity Water ultrasonic irrigation photomask 1 continues 10min.
Embodiment 5
A kind of photomask cleaning, including：
(1) demoulding：The protection of photomask surface is removed from 400N, perpendicular to the surface of photomask 1, slow upward pulling force Film 6；
(2) vacuumize：First photomask 1 is fixed on cleaning machine, then by the quartz with vacuum protection cover suction nozzle 7 Protecting glass 2 is placed on optical mask plate, wherein, the size of protective cover 2 is less than the size of protective film 6, and is more than photomask Graphic limit 5, the lower end of vacuum protection cover suction nozzle 7 opens up equally distributed vacuum suction hole 3, and is covered according to protective cover and light The size of mould graphic limit, the thickness of adjustment vacuum protection cover 2 is 1mm, is vacuumized, when pressure reaches 10-3Stop taking out very during Pa It is empty；
(3) colloid is gone：Using the cull 4 in dry method or/and wet-cleaning mask, 30min is cleaned；With high-purity after having cleaned Water rinses photomask 2 times；
(4) inflate, remove protective cover：Pure N is injected into vacuum protection cover 22, as the pure N of injection2Pressure reaches 1.3 air Stop being passed through pure N during pressure2, vacuum protection cover 2 and photomask 1 are separated, photomask removing glue protective cover 2 is removed；
(5) clean：First continue 1min with high purity water ultrasonic irrigation photomask 1, ultrasonic wave work(frequency is 130KHz, Ran Houyong Wavelength continues 10min for the light irradiation photomask 1 of 200 micrometer ranges, illumination and ultrasonic irrigation 10 times is repeated, finally again with high-purity Water ultrasonic irrigation photomask 1 continues 1min.
Embodiment 6
A kind of photomask cleaning, including：
(1) demoulding：The protection of photomask surface is removed from 500N, perpendicular to the surface of photomask 1, slow upward pulling force Film 6；
(2) vacuumize：First photomask 1 is fixed on cleaning machine, then by poly- four with vacuum protection cover suction nozzle 7 PVF protective cover 2 is placed on optical mask plate, wherein, the size of protective cover 2 is less than the size of protective film 6, and is covered more than light Mould graphic limit 5, the lower end of vacuum protection cover suction nozzle 7 open up equally distributed vacuum suction hole 3, and according to protective cover and light The size on mask graph border, the thickness of adjustment vacuum protection cover 2 is 5mm, is vacuumized, when pressure reaches 10-3Stop taking out during Pa Vacuum；
(3) colloid is gone：Using the cull 4 in dry method or/and wet-cleaning mask, 8min is cleaned；With high-purity after having cleaned Water rinses photomask 6 times；
(4) inflate, remove protective cover：Pure N is injected into vacuum protection cover 22, as the pure N of injection2Pressure reaches 1.4 air Stop being passed through pure N during pressure2, vacuum protection cover and photomask are separated, photomask removing glue protective cover 2 is removed；
(5) clean：First continue 6min with high purity water ultrasonic irrigation photomask 1, ultrasonic wave work(frequency is 30KHz, Ran Houyong Wavelength continues 15min for the light irradiation photomask 1 of 15 micrometer ranges, repeats illumination and ultrasonic irrigation 6 times, finally uses high purity water again Ultrasonic irrigation photomask 1 continues 8min.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto, Any one skilled in the art the invention discloses technical scope in, the change or replacement that can readily occur in, It should all be included within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of the claim Enclose and be defined.

Claims (10)

1. a kind of photomask cleaning, it is characterised in that the technique includes：
Demoulding：Remove the protective film of photomask surface；
Vacuumize：First photomask is fixed on cleaning machine, the protective cover with vacuum protection cover suction nozzle is then placed on light On mask plate, vacuumize, when pressure reaches 10-1~10-3Stop vacuumizing during Pa；
Go colloid：Using the cull certain time in dry method or/and method for cleaning photo mask by wet, light is rinsed with high purity water after having cleaned Mask is for several times；
Inflate, remove protective cover：Gas is injected into protective cover separates protective cover and photomask, then protects photomask removing glue Shield is removed；
Cleaning：High purity water ultrasonic irrigation photomask is first used, then uses up irradiation photomask, repeats light irradiation and ultrasonic irrigation number It is secondary, high purity water ultrasonic irrigation photomask is finally used again.
2. photomask cleaning according to claim 1, it is characterised in that the demoulding is from 5~500N, vertically The protective film of photomask surface is removed in photomask surface, slow upward pulling force.
3. photomask cleaning according to claim 1 or 2, it is characterised in that the vacuum protection cover size is less than Protective film size, and it is more than photomask pattern border, the protective cover thickness is 0.5mm~2cm, and the vacuum protection cover is inhaled Head lower end opens up equally distributed vacuum suction hole.
4. photomask cleaning according to claim 3, it is characterised in that the material of the vacuum protection cover is quartz Glass or polytetrafluoroethylene (PTFE).
5. the photomask cleaning according to one of claims 1 to 3, it is characterised in that dry method cleaning for wait from Daughter is cleaned, and the wet-cleaning is cleaned for organic solvent, and the time is 1~30min；It is described cleaned after with high purity water rinse light Mask washing time is 2~10 times.
6. photomask cleaning according to claim 5, it is characterised in that the plasma is O2Plasma, O3 Plasma and O2And O3Combination more than one or both of hybrid plasma, the plasma density value are 106~1020cm-3, temperature is 50C~400C, and pressure is 5mtorr~500mtorr；The organic solvent is dense H2S2O4It is or dense H2S2O4And H2O2According to 10:1~1:10 combinations.
7. photomask cleaning according to claim 5, it is characterised in that the time is 10~15min；The punching Number is washed as 3~5 times.
8. the photomask cleaning according to one of claims 1 to 3, it is characterised in that when injection pressure reaches 1~ Stop being passed through gas during 1.5 atmospheric pressure, the gas is pure nitrogen gas or air.
9. the photomask cleaning according to one of Claims 1 to 4, it is characterised in that the high purity water ultrasonic irrigation 1~10min of time, ultrasonic wave work(frequency are 10~130KHz, and the wavelength of illumination is 0.2~200 micron, light application time is 10~ 60min, number of repetition are 2~10 times.
10. photomask cleaning according to claim 9, it is characterised in that the high purity water ultrasonic irrigation time 3~ 5min, ultrasonic wave work(frequency are 50~100KHz, and the wavelength of illumination is 20~100 microns, and light application time is 20~40min, weight Again number is 3~5 times.
CN201710728019.1A 2017-08-23 2017-08-23 A kind of photomask cleaning Pending CN107490933A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710728019.1A CN107490933A (en) 2017-08-23 2017-08-23 A kind of photomask cleaning

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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Publication Number Publication Date
CN107490933A true CN107490933A (en) 2017-12-19

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5938860A (en) * 1997-08-28 1999-08-17 Micron Technology, Inc. Reticle cleaning without damaging pellicle
US20100078039A1 (en) * 2008-09-30 2010-04-01 Banqiu Wu Method and appratus for mask pellicle adhesive residue cleaning
CN101957554A (en) * 2009-07-14 2011-01-26 中芯国际集成电路制造(上海)有限公司 Method for removing protective film glue on photomask
CN102033416A (en) * 2009-09-27 2011-04-27 中芯国际集成电路制造(上海)有限公司 Method for washing light mask
US20130186436A1 (en) * 2009-08-03 2013-07-25 Samsung Electronics Co., Ltd. Apparatus for cleaning photomask

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5938860A (en) * 1997-08-28 1999-08-17 Micron Technology, Inc. Reticle cleaning without damaging pellicle
US20100078039A1 (en) * 2008-09-30 2010-04-01 Banqiu Wu Method and appratus for mask pellicle adhesive residue cleaning
CN101957554A (en) * 2009-07-14 2011-01-26 中芯国际集成电路制造(上海)有限公司 Method for removing protective film glue on photomask
US20130186436A1 (en) * 2009-08-03 2013-07-25 Samsung Electronics Co., Ltd. Apparatus for cleaning photomask
CN102033416A (en) * 2009-09-27 2011-04-27 中芯国际集成电路制造(上海)有限公司 Method for washing light mask

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Application publication date: 20171219