CN107447190A - A kind of metal mask and preparation method thereof - Google Patents
A kind of metal mask and preparation method thereof Download PDFInfo
- Publication number
- CN107447190A CN107447190A CN201610373550.7A CN201610373550A CN107447190A CN 107447190 A CN107447190 A CN 107447190A CN 201610373550 A CN201610373550 A CN 201610373550A CN 107447190 A CN107447190 A CN 107447190A
- Authority
- CN
- China
- Prior art keywords
- aperture area
- metal mask
- bridge region
- annular via
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
- C23F1/04—Chemical milling
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of metal mask, including：Annular via；Internal non-aperture area, it is located inside the annular via；The non-aperture area in periphery, it is located at outside the annular via；Bridge region, it connects the non-aperture area in inside and the non-aperture area in periphery.Present invention simultaneously provides a kind of preparation method of metal mask, comprise the following steps：(1) a mask bottom plate is provided, its second face with the first face and corresponding thereto, is at least coated with photosensitive photoresistance on the first face；(2) exposure defines annular section, and reserved bridge region, annular via is formed by developing, etching, the inside of wherein described annular via is internal non-aperture area, the outside of the annular via is the non-aperture area in periphery, and the bridge region connects the non-aperture area in inside and the non-aperture area in periphery；(3) bridge region is cut off.
Description
Technical field
The present invention relates to OLED manufacturing technology fields, and in particular to a kind of metal mask and preparation method thereof.
Background technology
It is many excellent that organic electroluminescence device (OLED) has that low in energy consumption, light, brightness is high, the visual field is wide and reaction is fast etc.
Point, and Flexible Displays can be realized, have been widely used in the intelligent terminals such as smart mobile phone, tablet personal computer.
Existing OLED display panel is layer structure, and every layer is prepared by way of evaporation.In manufacturing process flow
Need to prepare some common layers (Common Layer), it accordingly needs to use some shared metal masks (exposure light shield)
The metal mask of (Common Metal Mask, hereinafter referred to as CMM) as evaporation.
As shown in figure 1, existing OLED display panel (Panel) is layer structure, every layer is prepared by way of evaporation.
The structure being deposited generally, for each layer of needs, is required for being deposited using a corresponding metal mask.But
In OLED structure, the similar layer of some structures be present, the metal mask required for it is deposited is also all identical, and these can be utilized
Layer prepared by identical metal mask evaporation is common layer (Common Layer).Generally require to make in manufacturing process flow
Standby some common layers, its accordingly need to use some shared metal masks (exposure light shield) (Common Metal Mask, below
Abbreviation CMM) as the metal mask being deposited.Such as shown in Fig. 1, HIL1 layers 12, HIL2-1 layers 13, HIL3 layers 15, electricity in figure
Hole transport layer 16, electron transfer layer 18 and light-output layer 20 are common layer.Common in general OLED technological processes
Layer shares 6 layers, it is necessary to using 6 CMM light shields.
At present, prior art manufacturing process is to etch metal mask with whole display panel (Panel) opening mode, by
It is relatively large in opening, can because pool effect and caused by etching solution because large area etch and poor fluidity caused by etching solution it is dense
It is poor to spend homogeneity, it is bad in turn result in edge etch dimensional homogeneity, makes product substandard.To Fig. 5, it shows reference picture 2
Technological process and the structure of metal mask are prepared in the prior art.As shown in Fig. 2 photosensitive photoresistance is coated with mask bottom plate 21
22 and pair with size of display panels to be prepared be adapted the region of display panel pattern 23 be exposed.It is as shown in figure 3, right
Mask bottom plate 21 after foregoing exposure carries out developing manufacture process, so as to remove the photosensitive photoresistance 22 in the region of display panel pattern 23, makes
Obtain the part mask bottom plate 21 to expose, form display surface plate hole 31 after development.As shown in figure 4, foregoing mask bottom plate 21 is carried out
Etching, the expose portion of mask bottom plate 21 is etched away into part, forms display panel prepared hole 31 '.The mask bottom plate 21 is turned over
Face, repeated exposure, development, etch process, you can obtain the gold with the through hole adaptable with required preparation size of display panels
Belong to mask.In the preparation technology of OLED display panel, because former Common Layer metal masks can face etching during fabrication
The problem of edge of opening out-of-flatness caused by area is big, the exception of OLED technological processes is easily caused, causes the gold produced
Belong to mask open edge out-of-flatness, Aperture precision is not high.Further, since in this preparation technology of metal mask, etching is
Travelling technique, thus the metal that whole display panel opening is corresponded on mask plate drop can be behind scratch mask bottom plate, or
Mask bottom plate is caused to be stuck in base station.
The content of the invention
For problems of the prior art, it is an object of the invention to provide a kind of metal mask and a kind of metal to cover
The preparation method of film, reduce because etching area is big and caused by edge etch size uniformity caused by etchant concentration inequality
The problem of property is bad, prevents that metal drops in etch process.
To reach above-mentioned purpose, the present invention provides a kind of metal mask, it is characterised in that including：
Annular via；
Internal non-aperture area, it is located inside the annular via；
The non-aperture area in periphery, it is located at outside the annular via；
Bridge region, it connects the non-aperture area in inside and the non-aperture area in periphery.
Preferably, multiple annular vias surround rectangle.
Preferably, the non-aperture area in the inside is central openings area.
Preferably, the bridge region is between the two neighboring annular via.
Preferably, the annular via is semicircle, and the bridge region is located between the both ends of the annular via.
Preferably, the thickness of the bridge region is less than or equal to mask thicknesses.
Preferably, the width of the annular via is more than the etched thickness of the mask.
As another aspect of the present invention, also provide a kind of preparation method of metal mask, it is characterised in that including with
Lower step：
(1) a mask bottom plate is provided, its second face with the first face and corresponding thereto, at least coating sense on the first face
Light photoresistance；
(2) exposure defines annular section, and reserved bridge region, annular via is formed by developing, etching, wherein the ring
The inside of shape through hole is internal non-aperture area, and the outside of the annular via is the non-aperture area in periphery, and the bridge region connects institute
State internal non-aperture area and the non-aperture area in periphery；
(3) bridge region is cut off.
Preferably, the technique that the step (2) uses two-sided half-etching respectively.
Preferably, after passing through half-etching in the first face of the mask bottom plate, first it is coated with corrosion protection on first face
Protective layer is carved, then half-etching technique is carried out on the second face of the mask bottom plate.
Preferably, the annular section defined in the step (2) is rectangle or semicircle.
Preferably, the mode of excision bridge region is to utilize laser cutting in the step (3).
Compared with prior art, the present invention at least has the advantages that：
The present invention by wanted using in metal mask the opening contours (understand depending on each product profile) of etching area as
The region of etching, first etch annular via and bridge region, then cut off bridge region, can reduce because etching area is big and caused by erosion
Carve size caused by liquid density unevenness and etch bad problem, prevent that metal drops in etch process.
Brief description of the drawings
Fig. 1 is the structural representation of common layer (Common Layer) in existing OLED；
Fig. 2 is the existing mask bottom plate prepared after being exposed in metal one masking process；
Fig. 3 is the existing mask bottom plate prepared after developing in metal one masking process；
Fig. 4 is the existing mask bottom plate prepared after being etched in metal one masking process；
Fig. 5 is the structural representation of the metal mask of the embodiment of the present invention；
Fig. 6 is the structural representation of the metal mask of another embodiment of the present invention；
Fig. 7 is the schematic flow sheet of the metal mask preparation method of the embodiment of the present invention；
Fig. 8 is to be coated with the mask bottom plate after photosensitive photoresistance in the preparation method step S1 of the embodiment of the present invention to overlook and correspondingly
Cross section structure diagram；
Fig. 9 is that sectional structure is overlooked and corresponded to the mask bottom plate after being exposed in the preparation method step S2 of the embodiment of the present invention
Schematic diagram；
Figure 10 is that section view knot is overlooked and corresponded to the mask bottom plate after developing in the preparation method step S2 of the embodiment of the present invention
Structure schematic diagram；
Figure 11 be the embodiment of the present invention preparation method step S2 in mask bottom plate mask bottom plate after etching overlook and
Corresponding cross section structure diagram；
Figure 12 is photosensitive for the first face coat protective layer in the preparation method step S2 of the embodiment of the present invention and the coating of the second face
Mask bottom plate after photoresistance is overlooked and corresponding cross section structure diagram；
Figure 13 is for the mask bottom plate vertical view after the second facet etch in the preparation method step S2 of the embodiment of the present invention and correspondingly
Cross section structure diagram；
Figure 14 is the flow and structural representation that bridge region is removed in the preparation method step S4 of the embodiment of the present invention.
Wherein, description of reference numerals is as follows：
10：Thin-film transistor array base-plate
11：Anode
12：HIL1
13：HIL2-1 layers
14：HIL2-2/HIL2-3
15：HTL3
16：Electric hole transport layer
17：Luminescent layer
18：Electron transfer layer
19：Negative electrode
20：Light-output layer
21：Mask bottom plate
22：Photosensitive photoresistance
22’：Photosensitive photoresistance
23：Display panel pattern
31：Display surface plate hole after development
31’：Display panel prepared hole
41：Annular via
42：The internal non-non- aperture area in aperture area/center
43：The non-aperture area in periphery
44：Bridge region
51：Annular via pattern
52：Annular aperture after development
52’：Ring-type prepared hole
61：Protective layer
Embodiment
Example embodiment is described more fully with referring now to accompanying drawing.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that the present invention more
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Identical accompanying drawing in figure
Mark represents same or similar structure, thus will omit repetition thereof.
The word of expression position and direction described in present invention, is the explanation carried out by taking accompanying drawing as an example, but root
According to needing to make a change, make change and be all contained in the scope of the present invention.
Fig. 5 is refer to, it illustrates a kind of structural representation of metal mask of the embodiment of the present invention, the metal mask bag
Multiple annular vias 41 are included, are surrounded by multiple annular vias 41 and the non-aperture area 42 in inside on its interior, are led to positioned at ring-type
The bridge region 44 of the internal non-aperture area 42 in peripheral non-aperture area 43 and connection and the non-aperture area 43 in periphery outside hole 41.
As shown in figure 5, the non-perforate on mask bottom plate 21 is divided into internal non-aperture area 42 and periphery by annular via 41
Non- aperture area 43, internal non-aperture area 42 are located inside annular via 41.The Outside Dimensions of the annular via 41 depend on OLED
Common layer needs the scope being deposited, and in addition to it can be the annular shown in figure, can also be that other are any and required evaporation
The adaptable shape of scope.In general, the periphery of the Outside Dimensions of annular via 41 and an OLED display panel to be formed
Size is identical；As shown in figure 5, four annular vias 41 substantially surround the rectangle corresponding to rectangle OLED display panel.Ring-type is led to
The number in hole 41 is also not limited to four shown in figure, can be other numbers.In the present embodiment, internal non-aperture area is
Central non-aperture area 42 as shown in Figure 5, but centre is not limited to, it can also be other interior locations of offset from center；
The shape of the non-aperture area 42 in center is not limited to as shown in figure 5, it can also be other arbitrary shapes.
Bridge region 44 is used to connect the non-aperture area 43 in the non-aperture area 42 in the center and periphery, and the non-aperture area 42 in center is risen
To supporting role, the non-aperture area 42 in center is avoided to be dropped in subsequent technique.As shown in figure 5, bridge region 44 is arranged at adjacent ring
Between shape through hole 41.But the bridge region 44 is not limited to the design method shown in figure, it can be other numbers, can set
In other any positions for being enough to prevent the non-aperture area 42 in center from dropping, and to be deposited by the common layers of OLED range size,
Shape and etching parameter and difference.The thickness of bridge region 44 can be identical with the thickness of mask bottom plate, might be less that mask
The thickness of bottom plate.
Fig. 6 is refer to, it illustrates a kind of structural representation of metal mask of another embodiment of the present invention, wherein, should
The annular via 41 of metal mask is semicircle, and bridge region 44 is the region shown in dotted line in figure.The bridge region 44 is simultaneously unlimited
The structure shown in Fig. 6 or the region at other connection semicircle both ends of annular via 41.Such as it can also regard not
The set-up mode for the bridge region 44 that the semi-ring of etching does not drop for metal in support etching face.Annular via 41 can also be 3/4
Circle etc..
Fig. 7 is refer to, it illustrates the schematic flow sheet of the preparation method of the metal mask of the embodiment of the present invention.The system
Preparation Method comprises the following steps：
Step S1：One mask bottom plate 21 is provided, its second face with the first face and corresponding thereto, at least on the first face
It is coated with photosensitive photoresistance 22.
For concrete example, as shown in figure 8, being coated with photosensitive photoresistance 22, photosensitive photoresistance on the face of the mask bottom plate 21 first
42 can be the material commonly used in existing photoetching technique, and photoresist can be used, can also use universe formula photoresist (light-sensitive surface).Example
Such as it is the photoresist of universe formula, then it substitutes coating (coating) mode in a manner of pad pasting.
Step S2：Exposure defines annular section, and reserved bridge region 44, and annular via 41 is formed by developing, etching, its
Described in the inside of annular via 41 be internal non-aperture area 42, the outside of the annular via is the non-aperture area 43 in periphery, institute
State bridge region 44 and connect the non-aperture area 42 in the inside and the non-aperture area 43 in the periphery.
For concrete example, as shown in figure 9, the mask bottom plate 21 that photosensitive photoresistance 22 is coated with the first face is exposed,
So as to the annular via pattern 51 being formed on after exposure, and bridge region 44 is reserved simultaneously.For the annular via pattern
51, because etching breadth depth ratio, the width w of annular via pattern 51 is more than the thickness that mask bottom plate 21 etches.For reserving bridge region
44, for continuous processing, only Exposure mode can be reserved, but Exposure mode can use photomask exposure, can also make
Exposed with laser direct imaging machine.Bridge region 44 must be designed in the opening contours of the mask bottom plate 21.Its design spirit is energy
The bridge region 44 is enough allowd to support the non-etching area in the inside of wanted etching area, that is, internal non-aperture area 42, to keep away
Dropped from subsequent technique.As shown in Figure 10, the mask bottom plate 21 after foregoing exposure is developed, annular via pattern 51 after exposure
The photosensitive photoresistance 22 in part is removed, and exposes the mask bottom plate 21 of its lower covering.As shown in figure 11, to the mask bottom after foregoing development
Plate 21 is etched processing procedure, and the foregoing part of mask bottom plate 21 exposed is partially etched, so as to form ring-type prepared hole
52 ', but do not form annular via 41.Above-mentioned etching in the present embodiment can use travelling technique, and etching mode is wet
Etching.In general, the present invention is applicable only to the mode of wet etching.
As shown in figure 12, can on the first face of the mask bottom plate 21 coat protective layer 61, prevent in follow-up work
It is etched in skill flow.Then, it is coated with photosensitive photoresistance 22 ' on the second face of the mask bottom plate 21.As shown in figure 13, at this
Foregoing development, etch process are repeated on second face of mask bottom plate 21, so as to form annular via 41 on the mask bottom plate 21.
Etching can be the two-sided technique etched at twice in the present embodiment, be etched to the complete rear turn-over of front-side etch entirely same
Continue to etch penetrating in position.As it was previously stated, by carrying out half-etching processing procedure respectively on the two sides of mask bottom plate 21 first, second, i.e.,
Annular via 41 can be formed on the mask bottom plate 21.
Step S3：Cut off the bridge region.
Annular via is completed due to the final metal mask for needing preparation to can be used in preparing display panel, therefore preparing
After 41, it is also necessary to remove the bridge region 44.Physical shear mode can be used by removing the mode of bridge region 44, such as can be with
Use the physics modes such as laser, break bar, scissors or blade.Such as Figure 14, it illustrates the flow for removing bridge region 44 and corresponding
Cross-section structure.After removing bridge region 44, internal non-aperture area 42 can drop because losing support, so as to be formed with to be made
The adaptable through hole of standby size of display panels.
The embodiment of the present invention is illustrated exemplified by preparing several display panel size dimension through holes, but the present invention can use
In the mask plate species not limited to this of preparation.It is that multiple display panel openings are done on one piece of mask bottom plate 21 in actual process, often
Individual opening is the opening of corresponding display panel.This mode can be applied to the making of all masks.For fine metal mask version
(FMM) for, it will depending on the width being open using the thickness of mask bottom plate 21 with needs, if met the requirements, i.e., can also fit
For preparing fine metal mask version.
It is the domain closed that " ring-type " alleged by the present invention, which does not limit, can be a part for ring；The shape of ring can also
It is various, to be adapted to the appearance profile of various display panels or other workpieces to be processed.
Although embodiments of the invention have been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art is not departing from the principle and objective of the present invention
In the case of above-described embodiment can be changed within the scope of the invention, change, replace and modification.
Claims (12)
- A kind of 1. metal mask, it is characterised in that including：Annular via；Internal non-aperture area, it is located inside the annular via；The non-aperture area in periphery, it is located at outside the annular via；Bridge region, it connects the non-aperture area in inside and the non-aperture area in periphery.
- 2. metal mask according to claim 1, it is characterised in that multiple annular vias surround rectangle.
- 3. metal mask according to claim 2, it is characterised in that the non-aperture area in inside is central openings area.
- 4. metal mask according to claim 2, it is characterised in that the bridge region is located at the two neighboring ring-type and led to Between hole.
- 5. metal mask according to claim 1, it is characterised in that the annular via is semicircle, the bridge region Between the both ends of the annular via.
- 6. metal mask according to any one of claim 1 to 5, it is characterised in that the thickness of the bridge region is less than Or equal to mask thicknesses.
- 7. metal mask according to any one of claim 1 to 5, it is characterised in that the width of the annular via is big In the etched thickness of the mask.
- 8. a kind of preparation method of metal mask, it is characterised in that comprise the following steps：(1) a mask bottom plate is provided, its second face with the first face and corresponding thereto, is at least coated with photosensitive light on the first face Resistance；(2) exposure defines annular section, and reserved bridge region, annular via is formed by developing, etching, wherein the ring-type is led to The inside in hole is internal non-aperture area, and the outside of the annular via is the non-aperture area in periphery, and the bridge region connection is described interior The non-aperture area in portion and the non-aperture area in periphery；(3) bridge region is cut off.
- 9. the preparation method of metal mask according to claim 8, it is characterised in that the step (2) uses two-sided point The technique of other half-etching.
- 10. the preparation method of metal mask according to claim 9, it is characterised in that the first of the mask bottom plate Face is passed through after half-etching, and anti-etch protection layer is first coated with first face, then on the second face of the mask bottom plate Carry out half-etching technique.
- 11. the preparation method of metal mask according to claim 8, it is characterised in that the ring defined in the step (2) Shape region is rectangle or semicircle.
- 12. the preparation method of the metal mask according to any one of claim 8 to 11, it is characterised in that the step (3) mode of excision bridge region is to utilize laser cutting in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610373550.7A CN107447190A (en) | 2016-05-31 | 2016-05-31 | A kind of metal mask and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610373550.7A CN107447190A (en) | 2016-05-31 | 2016-05-31 | A kind of metal mask and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107447190A true CN107447190A (en) | 2017-12-08 |
Family
ID=60484995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610373550.7A Pending CN107447190A (en) | 2016-05-31 | 2016-05-31 | A kind of metal mask and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107447190A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114182204A (en) * | 2022-01-26 | 2022-03-15 | 福建华佳彩有限公司 | Mask strip structure of special-shaped screen and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1151611A (en) * | 1995-09-28 | 1997-06-11 | 株式会社村田制作所 | Process for forming electrodes of electronic components and apparatus for use in process |
| CN103451598A (en) * | 2013-09-05 | 2013-12-18 | 中山新诺科技有限公司 | Novel fine metal mask plate for producing organic light emitting diode (OLED) display panel and fabrication method of novel fine metal mask plate |
| CN103887157A (en) * | 2014-03-12 | 2014-06-25 | 京东方科技集团股份有限公司 | Optical mask plate and laser lift-off device |
| CN104532183A (en) * | 2015-01-26 | 2015-04-22 | 深圳市华星光电技术有限公司 | Manufacturing method of high-precision mask |
| CN104966791A (en) * | 2015-07-01 | 2015-10-07 | 深圳市华星光电技术有限公司 | Mask plate, manufacturing method of mask plate and OLED device packaging method |
-
2016
- 2016-05-31 CN CN201610373550.7A patent/CN107447190A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1151611A (en) * | 1995-09-28 | 1997-06-11 | 株式会社村田制作所 | Process for forming electrodes of electronic components and apparatus for use in process |
| CN103451598A (en) * | 2013-09-05 | 2013-12-18 | 中山新诺科技有限公司 | Novel fine metal mask plate for producing organic light emitting diode (OLED) display panel and fabrication method of novel fine metal mask plate |
| CN103887157A (en) * | 2014-03-12 | 2014-06-25 | 京东方科技集团股份有限公司 | Optical mask plate and laser lift-off device |
| CN104532183A (en) * | 2015-01-26 | 2015-04-22 | 深圳市华星光电技术有限公司 | Manufacturing method of high-precision mask |
| CN104966791A (en) * | 2015-07-01 | 2015-10-07 | 深圳市华星光电技术有限公司 | Mask plate, manufacturing method of mask plate and OLED device packaging method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114182204A (en) * | 2022-01-26 | 2022-03-15 | 福建华佳彩有限公司 | Mask strip structure of special-shaped screen and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9188856B2 (en) | Type of fine metal mask (FFM) used in OLED production and the method of manufacturing it | |
| CN207313683U (en) | Intermediate products and deposition mask | |
| CN100468824C (en) | Method of manufacturing a mask | |
| KR100703102B1 (en) | Method for manufacturing organic electroluminescence device | |
| CN110158025B (en) | Mask plate manufacturing method and mask plate | |
| CN105063553A (en) | Method for manufacturing magnetic mask plate for coating by evaporation | |
| TW201743488A (en) | Hollowed electronic display | |
| CN105093813B (en) | Optical mask plate and exposure system | |
| KR20150017191A (en) | Method for manufacturing metal mask | |
| US9880426B2 (en) | Display panel and manufacturing method thereof, mask and manufacturing method thereof, and display device | |
| CN113286916B (en) | Micro precise mask plate, manufacturing method thereof and AMOLED display device | |
| US10287669B2 (en) | Mask and method of manufacturing the mask | |
| US10153333B1 (en) | Method for manufacturing an OLED backplate and method for manufacturing an OLED panel | |
| CN102608860A (en) | Photoetching method, photomask combination and exposure system | |
| CN113016073A (en) | Mask plate, manufacturing method thereof and organic light-emitting device | |
| CN107447190A (en) | A kind of metal mask and preparation method thereof | |
| CN111095591A (en) | FMM process for high RES FMM | |
| CN104040428B (en) | Phase shifting mask and the corrosion-resisting pattern forming method for using the phase shifting mask | |
| CN107475665A (en) | A kind of mask plate and evaporation coating method | |
| WO2022030612A1 (en) | Vapor deposition mask and method for producing vapor deposition mask | |
| CN103556150A (en) | Method for producing high-precision mask plate | |
| CN107447191A (en) | A kind of metal mask and preparation method thereof | |
| CN110783493A (en) | Mask structure, method of manufacturing the same, and workpiece processing system | |
| CN111364002B (en) | Manufacturing method of fine metal mask plate suitable for high PPI | |
| US11726400B2 (en) | Lithography process method for defining sidewall morphology of lithography pattern |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171208 |
|
| RJ01 | Rejection of invention patent application after publication |