CN107447191A - A kind of metal mask and preparation method thereof - Google Patents
A kind of metal mask and preparation method thereof Download PDFInfo
- Publication number
- CN107447191A CN107447191A CN201610379837.0A CN201610379837A CN107447191A CN 107447191 A CN107447191 A CN 107447191A CN 201610379837 A CN201610379837 A CN 201610379837A CN 107447191 A CN107447191 A CN 107447191A
- Authority
- CN
- China
- Prior art keywords
- aperture area
- face
- metal mask
- preparation
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
Abstract
The present invention provides a kind of metal mask, including：Aperture area, including multiple through holes；And half aperture area, including multiple grooves, the multiple groove surfaces are less than the surface of the metal mask；Wherein, the aperture area does not overlap with half aperture area.The present invention also provides a kind of preparation method of metal mask simultaneously, comprises the following steps：(1) a mask bottom plate is provided, its second face with the first face and corresponding thereto, is at least coated with photosensitive photoresistance on first face；(2) to mask bottom plate exposure, development, etching, so as to form aperture area and half aperture area on the first face, the aperture area does not overlap with half aperture area, the aperture area includes impermeable multiple prepared holes, half aperture area includes multiple grooves, and the surface of the multiple groove is less than first face；(3) photosensitive photoresistance is coated with the second face of the mask bottom plate, and exposes, develops, then multiple prepared hole relevant positions with the first face aperture area only on the face are etched, and the multiple prepared hole is formed through hole.
Description
Technical field
The present invention relates to make in organic light emitting diode display manufacturing field, more particularly to a kind of display production
Metal mask and preparation method thereof.
Background technology
It is many excellent that organic electroluminescence device (OLED) has that low in energy consumption, light, brightness is high, the visual field is wide and reaction is fast etc.
Point, and Flexible Displays can be realized, have been widely used in the intelligent terminals such as smart mobile phone, tablet personal computer.
As shown in figure 1, existing OLED display panel (Panel) is layer structure, every layer is prepared by way of evaporation.
The structure being deposited generally, for each layer of needs, is required for being deposited using a corresponding metal mask.But
In OLED structure, the similar layer of some structures be present, the metal mask required for it is deposited is also all identical, and these can be utilized
Layer prepared by identical metal mask evaporation is common layer (Common Layer).Generally require to make in manufacturing process flow
Standby some common layers, its accordingly need to use some shared metal masks (exposure light shield) (Common Metal Mask, below
Abbreviation CMM) as the metal mask being deposited.Such as shown in Fig. 1, HIL1 layers 12, HIL2-1 layers 13, HIL3 layers 15, electric hole in figure
Transport layer 16, electron transfer layer 18 and light-output layer 20 are common layer.Common Layer in general OLED technological processes
6 layers are shared, it is necessary to using 6 CMM light shields.Further, since need to measure the thickness during evaporation, it is necessary to above-mentioned
CMM is upper to prepare multiple opening areas simultaneously, for preparing multiple test points for measuring thickness on Common Layer
Position (Test Key).Added up during evaporation, on each test point position and form different thickness laminations, so as to by using amount
Survey board to measure the thickness of test point position, you can know the specific thickness that each layer is deposited.
At present, in the preparation technology of OLED display panel, because of the different reasons that product design designs from component, can need
There is different film stacks in different test point positions to reach measurement purpose, and be needed in former technological process for this with difference
Exposure light shield do graph exposure, that is, that display panel design is identical and test point position Position Design is different can be present,
That is, only having test point position position between every layer of Common Layer has difference.Therefore, each diverse location is corresponded to
Test point position, technological process of the prior art, which is required for preparing corresponding different exposure light shield, does graph exposure.Such as Fig. 2 and
Shown in Fig. 3, for the structural representation of the metal mask with test point position prepared in the prior art.Wherein, Fig. 2 is shown
Exposure defines the structural representation of the metal mask formed after figure, the test point bit pattern 21 that there is exposure to define thereon
With display panel figure 22.It can be seen that in the prior art, only define single test point bit pattern 21.Fig. 3, which is shown, have been prepared
Into metal mask structural representation, it has display panel through hole 22 ' and test point position through hole 21 '.Due to technique before
In define only single test point bit pattern 21, therefore prepare the metal mask completed only there is single test point position through hole
21’.Therefore, for different test point positions, in the case of existing process, can only be prepared for different test point positions different
Exposure light shield, this undoubtedly adds exposure light shield expense, adds stock's amount of money.
The content of the invention
For problems of the prior art, it is an object of the invention to provide a kind of metal mask and its preparation side
Method, it is not necessary to prepare a set of metal mask respectively for the test point position of every kind of diverse location, reduce exposure technology number, reduce
Stock's amount of money.
To reach above-mentioned purpose, the present invention provides a kind of metal mask, including：
Aperture area, including multiple through holes；And
Half aperture area, including multiple grooves, the multiple groove surfaces are less than the surface of the metal mask；
Wherein, the aperture area does not overlap with half aperture area.
Preferably, half aperture area is located at a side of the aperture area.
Preferably, the multiple groove is shaped as circular, ellipse or polygon.
As another aspect of the present invention, a kind of preparation method of metal mask is also provided, it is characterised in that including such as
Lower step：
(1) a mask bottom plate is provided, its second face with the first face and corresponding thereto, at least applied on first face
The photosensitive photoresistance of cloth；
(2) to mask bottom plate exposure, development, etching, so as to form aperture area and half aperture area, institute on the first face
State aperture area not overlapping with half aperture area, the aperture area includes impermeable multiple prepared holes, half perforate
Area includes multiple grooves, and the surface of the multiple groove is less than first face；
(3) be coated with photosensitive photoresistance on the second face of the mask bottom plate, and expose, develop, then only on the face with
Multiple prepared hole relevant positions in the first face aperture area are etched, and the multiple prepared hole is formed through hole.
Preferably, in addition to step (4), selection needs penetrating recessed of perforate in multiple grooves in half aperture area
Groove carries out through hole.
Preferably, in the step (2), the groove of half aperture area is entirely located in a side of the aperture area.
Preferably, in the step (4), perforate is carried out to the groove for needing perforate with laser.
Preferably, in the step (4), perforate is carried out to the groove for needing perforate with break bar.
Preferably, in the step (4), perforate is carried out to the groove for needing perforate with blade.
Compared with prior art, the preparation method of metal mask and metal mask provided by the invention at least has with following
Beneficial effect：
The present invention will pass through etching on same set of metal mask for the test point position region for preparing all diverse locations
Mode prepare, and make its keep the impermeable state of half-etching.Subsequently preparation is being needed to use to form fc-specific test FC point
During position, then the process of the test point position groove perforate for needing, prepare metal mask, it is not necessary to for every kind of difference
The test point position of position all prepares a set of metal mask, can reduce stock's amount of money.
Brief description of the drawings
Fig. 1 is the structural representation of common layer (Common Layer) in existing OLED；
Fig. 2 is the existing mask bottom plate prepared after being exposed in common type metal one masking process；
Fig. 3 is the existing metal mask for preparing the preparation of common type metal one masking process；
Fig. 4 is the overlooking the structure diagram of the metal mask of the embodiment of the present invention；
Fig. 5 is the schematic flow sheet of the metal mask preparation method of the embodiment of the present invention；
Fig. 6 is that the vertical view of the mask bottom plate after photosensitive photoresistance and right is coated with the preparation method step S1 of the embodiment of the present invention
Answer cross section structure diagram；
Fig. 7 be the embodiment of the present invention preparation method step S2 in mask bottom plate after exposure imaging vertical view and correspondingly cut open
Depending on structural representation；
Fig. 8 be the embodiment of the present invention preparation method step S2 in mask bottom plate vertical view after etching and corresponding section view knot
Structure schematic diagram；
Fig. 9 be the embodiment of the present invention preparation method step S3 in the second face be coated with photoresistance and develop, etch after cover
The vertical view of film bottom plate and corresponding cross section structure diagram；
Figure 10 is the vertical view for the metal mask that completion is prepared in the preparation method step S3 of the embodiment of the present invention and correspondingly cutd open
Depending on structural representation；
Figure 11 is the schematic flow sheet of the metal mask preparation method of another embodiment of the present invention；
Figure 12 is the top view before laser beam drilling in the preparation method step S4 of another embodiment of the present invention and opening flow
Broken section structural representation.
Wherein, description of reference numerals is as follows：
10：Thin-film transistor array base-plate
11：Anode
12：HIL1
13：HIL2-1 layers
14：HIL2-2/HIL2-3
15：HTL3
16：Electric hole transport layer
17：Luminescent layer
18：Electron transfer layer
19：Negative electrode
20：Light-output layer
21：Test point bit pattern
22：Display panel figure
21’：Test point position through hole
22’：Display panel through hole
31：Aperture area
32：Half aperture area
41：Mask bottom plate
42：Photosensitive photoresistance
42’：Photosensitive photoresistance
43：Display surface plate hole after development
43’：Display panel prepared hole
44：Test point position hole after development
44’：Groove
51：Anti- etch protection layer
Embodiment
The example embodiment that the present invention is described more fully hereinafter with reference to the accompanying drawings will be combined now.However, example embodiment
It can in a variety of forms implement, and be not understood as limited to embodiment set forth herein；Conversely, there is provided these embodiments
So that the present invention is more comprehensively and completely, and the design of example embodiment can be comprehensively communicated to those skilled in the art.
Identical reference represents same or similar structure in figure, thus will omit repetition thereof.
The word of expression position and direction described in present invention, is the explanation carried out by taking accompanying drawing as an example, but root
According to needing to make a change, make change and be all contained in the scope of the present invention.
Fig. 4 is refer to, it illustrates the structural representation of the metal mask of the embodiment of the present invention, the metal mask includes opening
Porose area 31 and half aperture area 32 not overlapped with the aperture area 31.
As shown in figure 4, the metal mask of the present embodiment includes the aperture area 32 of aperture area 31 and half, the aperture area 31 and institute
Half aperture area 32 is stated not overlap.Aperture area 31 is multiple display panel through holes for being used to form display panel (Panel)
22 ', its openings of sizes and the size of the display panel of required formation are adapted.Half aperture area 32 includes being less than metal mask table
Multiple grooves (such as impermeable multiple test point positions prepared hole) 44 ' in face, the multiple test point position prepared hole 44 ' allow
It is formed selectively test point position through hole 21 '.The position of each test point position prepared hole 44 ' is different, will wherein appoint
After what test point position prepared hole 44 ' is opened, you can formed and surveyed for the relevant position where the test point position prepared hole 44 '
Pilot position.As shown in figure 4, in a preferred embodiment, half aperture area 32 is located at a side of aperture area 31.Test point position is pre-
The shape in standby hole 44 ' can be any other shapes such as circular, ellipse or polygon, but need to be according to thickness measurement platform
Demand and set.The position of test point position prepared hole 44 ' is used for the via arrangements mode for preparing display panel according to aperture area 31
It is and different.
Fig. 5 is refer to, it illustrates the schematic flow sheet of the preparation method of the metal mask of the embodiment of the present invention, the system
Preparation Method comprises the following steps：
Step S1：One mask bottom plate 41 is provided, its second face with the first face and corresponding thereto, at least on the first face
It is coated with photosensitive photoresistance 42.Photosensitive photoresistance 42 can be the material commonly used in existing photoetching technique, and photoresist can be used, can also make
With dry lithography glue (light-sensitive surface).The for example, photoresist of dry type, then its substitute coating (coating) mode in a manner of pad pasting.
As shown in Figure 6, it is preferable that photosensitive photoresistance 42 is only coated with the first face of mask bottom plate 41.
Step S2：The mask bottom plate 41 is exposed, develop, etched, so as to be formed on the first face such as dotted line frame in Fig. 8
The shown aperture area 32 of aperture area 31 and half, aperture area 31 do not overlap with half aperture area 32, and aperture area 31 includes not penetrating
Multiple display panel prepared holes 43 ', half aperture area 32 includes more less than the face of metal mask first (namely not penetrating)
Individual groove 44 '.The aperture area 32 of aperture area 31 and half described in the present embodiment is on mask bottom plate 41 and is not present real meaning
On division, and be only intended to distinguish explanation display surface plate hole and both different holes of test point position hole, between the two not
There is clear and definite division.
As shown in fig. 7, it is the photosensitive photoresistance 42 in the preparation method step S2 of the present embodiment on mask bottom plate 41 through exposing
Vertical view and corresponding cross section structure diagram after light, development, by development, the graphics field portion formed in foregoing step of exposure
The photosensitive photoresistance 42 divided has disappeared, so as to which the part of mask bottom plate 41 covered is exposed, with this i.e. in photosensitive photoresistance
Test point position hole 44 after display surface plate hole 43 after developing is formed on 42 and is developed.As shown in figure 8, it is the preparation side of the present embodiment
The vertical view and correspondence cross section structure diagram of mask bottom plate 41 after etching in method step S2, through overetch, foregoing step of exposure
In the part of mask bottom plate 41 that exposes be etched a part of depth, but do not form through hole.In the prior art, metal is covered
Film typically uses the two-sided technique etched at twice, be etched to full front-side etch it is complete after turn-over in same position to continue etching logical
Thoroughly, half-etching be front-side etch it is complete after, after turn-over no longer be directed to position etch, that is, form half-etching.As described above, mask bottom
The aperture area 31 formed on plate 41 includes impermeable multiple display panel prepared holes 43 ', and the display panel prepared hole 43 ' exists
Display panel through hole 22 ' will be formed by etching in follow-up step, and the hole shape and size and to be prepared showing for formation
Show that the shapes and sizes of panel (Panel) are adapted.Half aperture area 32 includes (namely obstructed less than metal mask surface
Multiple grooves 44 ' thoroughly), can be as needed in follow-up technological process, in the position for the test point position to be formed,
Corresponding groove 44 ' is opened as penetrating test point position through hole 21 '.In the present embodiment, because the etch process of groove 44 ' is with showing
Show the etching of panel prepared hole 43 ' while carry out, therefore the depth that groove 44 ' etches can be according to display panel prepared hole 44 '
Depending on etch requirements.By and large, as long as groove 44 ' is not etched by holes, any thickness can, be not limited solely to this implementation
Situation about being shown in example.The present embodiment takes above-mentioned process of the prior art, the shape on the first face of mask bottom plate 41
Into the aperture area 32 of aperture area 31 and half of half-etching.
Step S3：Photosensitive photoresistance 42 ' is coated with the second face of the mask bottom plate 41, and exposes, develop, is then only existed
Multiple relevant positions of display panel prepared hole 43 ' on the face with the first face aperture area 31 are etched, and make the multiple display
Panel prepared hole 43 ' forms through hole 22 '.As shown in figure 9, it is coated with anti-etch protection layer on the second face of the mask bottom plate 41
51, repeat foregoing exposure, development and etch process.In the technique carried out on second face, not then at the first face upper half
The relevant position of aperture area 32 forms any perforate so that half aperture area 32 on the first face keeps the state of half-etching；Such as Figure 10
Shown, by half-etching twice, the aperture area 31 forms multiple through holes 22 '.
Figure 11 is refer to, it illustrates the schematic flow sheet of the preparation method of the metal mask of another embodiment of the present invention.
In this embodiment, the preparation method of metal mask can further include：
Step S4：The test point position that selection needs perforate penetrating in multiple grooves 44 ' in half aperture area 32 is entered
Row through hole.As shown in figure 12, it illustrates carry out through hole in the penetrating groove of required perforate by way of laser beam drilling
Flow and vertical view and specific sectional structure chart.The present embodiment illustrate only by the way of laser via, but the mode of through hole is simultaneously
Not limited to this.The through-hole approaches that same effect can be reached in the prior art can apply to herein, such as with break bar or blade
Substitute laser and carry out through hole.
The depth that " half-etching " does not limit etching described in this specification is the half of flood thickness, but refer to according to
Required thickness is partially etched.
Although embodiments of the invention have been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art is not departing from the principle and objective of the present invention
In the case of above-described embodiment can be changed within the scope of the invention, change, replace and modification.
Claims (9)
- A kind of 1. metal mask, it is characterised in that including：Aperture area, including multiple through holes；AndHalf aperture area, including multiple grooves, the multiple groove surfaces are less than the surface of the metal mask；Wherein, the aperture area does not overlap with half aperture area.
- 2. metal mask according to claim 1, it is characterised in that half aperture area is located at the side of the aperture area Side.
- 3. metal mask according to claim 2, it is characterised in that being shaped as the multiple groove is circular, ellipse Or polygon.
- 4. a kind of preparation method of metal mask, it is characterised in that comprise the following steps：(1) a mask bottom plate is provided, its second face with the first face and corresponding thereto, sense is coated with least on first face Light photoresistance；(2) it is described to open so as to form aperture area and half aperture area on the first face to mask bottom plate exposure, development, etching Porose area does not overlap with half aperture area, and the aperture area includes impermeable multiple prepared holes, the half aperture area bag Multiple grooves are included, the multiple groove surfaces are less than first face；(3) photosensitive photoresistance is coated with the second face of the mask bottom plate, and exposes, develops, then only on the face with first Multiple prepared hole relevant positions of face aperture area are etched, and the multiple prepared hole is formed through hole.
- 5. the preparation method of metal mask according to claim 4, it is characterised in that also including step (4), described half Selection needs the penetrating groove of perforate to carry out through hole in multiple grooves in aperture area.
- 6. the preparation method of metal mask according to claim 5, it is characterised in that described half-open in the step (2) The groove of porose area is entirely located in a side of the aperture area.
- 7. the preparation method of metal mask according to claim 5, it is characterised in that in the step (4), with laser pair The groove of perforate is needed to carry out perforate.
- 8. the preparation method of metal mask according to claim 5, it is characterised in that in the step (4), with break bar pair The groove of perforate is needed to carry out perforate.
- 9. the preparation method of metal mask according to claim 5, it is characterised in that in the step (4), with blade pair The groove of perforate is needed to carry out perforate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610379837.0A CN107447191A (en) | 2016-06-01 | 2016-06-01 | A kind of metal mask and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610379837.0A CN107447191A (en) | 2016-06-01 | 2016-06-01 | A kind of metal mask and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107447191A true CN107447191A (en) | 2017-12-08 |
Family
ID=60486070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610379837.0A Pending CN107447191A (en) | 2016-06-01 | 2016-06-01 | A kind of metal mask and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107447191A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110284101A (en) * | 2018-03-19 | 2019-09-27 | 上海和辉光电有限公司 | A kind of metal mask plate and its manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203021638U (en) * | 2012-12-25 | 2013-06-26 | 唐军 | Mask plate for evaporation |
| CN203965796U (en) * | 2014-05-21 | 2014-11-26 | 京东方科技集团股份有限公司 | A kind of mask plate |
| CN104532183A (en) * | 2015-01-26 | 2015-04-22 | 深圳市华星光电技术有限公司 | Manufacturing method of high-precision mask |
| CN104630705A (en) * | 2015-03-13 | 2015-05-20 | 合肥鑫晟光电科技有限公司 | Mask plate and preparation method thereof |
-
2016
- 2016-06-01 CN CN201610379837.0A patent/CN107447191A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203021638U (en) * | 2012-12-25 | 2013-06-26 | 唐军 | Mask plate for evaporation |
| CN203965796U (en) * | 2014-05-21 | 2014-11-26 | 京东方科技集团股份有限公司 | A kind of mask plate |
| CN104532183A (en) * | 2015-01-26 | 2015-04-22 | 深圳市华星光电技术有限公司 | Manufacturing method of high-precision mask |
| CN104630705A (en) * | 2015-03-13 | 2015-05-20 | 合肥鑫晟光电科技有限公司 | Mask plate and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110284101A (en) * | 2018-03-19 | 2019-09-27 | 上海和辉光电有限公司 | A kind of metal mask plate and its manufacturing method |
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Application publication date: 20171208 |
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