CN107429040A - The manufacture method of resin composition for encapsulating, semiconductor device and semiconductor device - Google Patents
The manufacture method of resin composition for encapsulating, semiconductor device and semiconductor device Download PDFInfo
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- CN107429040A CN107429040A CN201580078021.8A CN201580078021A CN107429040A CN 107429040 A CN107429040 A CN 107429040A CN 201580078021 A CN201580078021 A CN 201580078021A CN 107429040 A CN107429040 A CN 107429040A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
A kind of resin composition for encapsulating, it is used for semiconductor element and engagement linear sealing, above-mentioned closing line is connected with above-mentioned semiconductor element and using Cu as main component, in above-mentioned resin composition for encapsulating, the sulphur extracted amount overall relative to above-mentioned resin composition for encapsulating calculated by condition 1 is set to W1When, W1For more than 0.04ppm below 0.55ppm.Condition 1：Above-mentioned resin composition for encapsulating will be made to be crushed with solidfied material obtained from 175 DEG C, the condition heat cure of 4 hours, obtain crushed material.Then, above-mentioned crushed material is implemented to be heat-treated under conditions of 150 DEG C, 8 hours, this caused gas is collected using hydrogen peroxide.Then, calculated by the sulfate ion amount in above-mentioned hydrogen peroxide relative to the overall sulphur extracted amount W of above-mentioned resin composition for encapsulating1。
Description
Technical field
The present invention relates to the manufacture method of resin composition for encapsulating, semiconductor device and semiconductor device.
Background technology
In order to improve the reliability for the semiconductor device for possessing closing line, carried out for resin composition for encapsulating various
The research of various kinds.As this technology, such as the technology described in patent document 1 can be enumerated.
Patent document 1 describes a kind of semiconductor containing the biphenyl type epoxy resin that water-disintegrable chlorine dose is 10~20ppm
Encapsulating epoxy resin composition.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2013-67694 publications
The content of the invention
The invention technical task to be solved
By semiconductor element and semiconductor element is connected to for the solidfied material using resin composition for encapsulating and with Cu
, it is necessary to improve its reliability for the semiconductor device being sealed to form for the closing line of main component.
For solving the means of technical task
According to the present invention, there is provided a kind of resin composition for encapsulating, its be used for by semiconductor element and with above-mentioned semiconductor
Element connects and the engagement linear sealing using Cu as main component, and above-mentioned resin composition for encapsulating contains epoxy resin (A) and consolidated
Agent (B), the sulphur extracted amount overall relative to above-mentioned resin composition for encapsulating calculated by condition 1 is set to W1When, W1For
More than 0.04ppm below 0.55ppm.
(condition 1：Above-mentioned resin composition for encapsulating will be made with solidification obtained from 175 DEG C, the condition heat cure of 4 hours
Thing crushes, and obtains crushed material.Then, above-mentioned crushed material is implemented to be heat-treated under conditions of 150 DEG C, 8 hours, utilizes hydrogen peroxide
Collect this caused gas.Then, calculated by the sulfate ion amount in above-mentioned hydrogen peroxide relative to above-mentioned sealing resin
The overall sulphur extracted amount W of composition1)
Also, according to the present invention, there is provided a kind of semiconductor device, it possesses：Semiconductor element；Closing line, its with it is above-mentioned
Semiconductor element connects and using Cu as main component；And sealing resin, its by above-mentioned resin composition for encapsulating solidfied material structure
Into, and by above-mentioned semiconductor element and above-mentioned engagement linear sealing.
Also, according to the present invention, there is provided a kind of manufacture method of semiconductor device, it, which possesses, utilizes above-mentioned sealing resin
Composition is connected by semiconductor element and with above-mentioned semiconductor element and the process using Cu as the engagement linear sealing of main component.
Invention effect
In accordance with the invention it is possible to improve the reliability of semiconductor device.
Brief description of the drawings
Above-mentioned purpose and other objects, features and advantages pass through preferred embodiment as described below and subsidiary following
Accompanying drawing it is more clear and definite.
Fig. 1 is the sectional view for representing the semiconductor device involved by present embodiment.
Embodiment
Hereinafter, embodiment is illustrated using accompanying drawing.Wherein, in all of the figs, to identical constitutive requirements mark
Identical symbol is noted, and is suitably omitted the description.
(the 1st embodiment)
Fig. 1 is the sectional view for representing the semiconductor device 100 involved by present embodiment.
Resin composition for encapsulating involved by present embodiment is to be used to connect by semiconductor element and with semiconductor element
Connect and the resin composition for encapsulating using Cu as the engagement linear sealing of main component, the resin composition for encapsulating contain asphalt mixtures modified by epoxy resin
Fat (A) and curing agent (B).Also, in resin composition for encapsulating, by by following conditions 1 calculate relative to sealing resin
The overall sulphur extracted amount of composition is set to W1When, W1For more than 0.04ppm below 0.55ppm.
(condition 1：Resin composition for encapsulating will be made with solidfied material powder obtained from 175 DEG C, the condition heat cure of 4 hours
It is broken, obtain crushed material.Then, the crushed material is implemented to be heat-treated under conditions of 150 DEG C, 8 hours, this is collected using hydrogen peroxide
Caused gas.Then, calculated by the sulfate ion amount in the hydrogen peroxide relative to resin composition for encapsulating entirety
Sulphur extracted amount W1)
The inventors found that by adjusting in the resin composition for encapsulating extracted with the condition of 150 DEG C, 8 hours
Sulphur extracted amount, it is possible to increase the reliability of semiconductor device, so as to complete the sealing resin involved by present embodiment
Composition.Wherein, the reliability as semiconductor device, such as reflux-resisting welded property and high temperature keeping characteristic etc. can be enumerated.
That is, according to present embodiment, based on above-mentioned opinion, resin composition for encapsulating is adjusted so that calculated by above-mentioned condition 1
The sulphur extracted amount W overall relative to resin composition for encapsulating gone out1For more than 0.04ppm below 0.55ppm.Thereby, it is possible to
Improve and be sealed to form semiconductor element and closing line using Cu as main component using the solidfied material of resin composition for encapsulating
Semiconductor device reliability.
Hereinafter, to the resin composition for encapsulating involved by present embodiment and possess by resin composition for encapsulating
The semiconductor device 100 of sealing resin 50 that forms of solidfied material be described in detail.
First, resin composition for encapsulating involved in the present invention is illustrated.
Resin composition for encapsulating is used to be connected and using Cu as main component by semiconductor element and with semiconductor element
Engage linear sealing.In the present embodiment, following situation can be illustrated：Formed using by the solidfied material of resin composition for encapsulating
Sealing resin by semiconductor element and engagement linear sealing, be consequently formed semiconductor package body.
Semiconductor element base material such as being mounted in the chip bonding pad (die pad) or organic substrate that form lead frame
On upper or other semiconductor elements.Now, semiconductor element is via closing line and the outer lead, the organic group that form lead frame
Plate or the electrical connection of other semiconductor elements.
Closing line is made up of the metal material using Cu as main component.As this metal material, for example, can enumerate by
Cu simple substance form metal material or using alloy materials of the Cu as main component and containing other metals.Closing line for example connects
In the electrode pad set by semiconductor element.The electrode pad of semiconductor element is for example by least surface using Al as main component
Metal material form.
In resin composition for encapsulating, the sulphur overall relative to resin composition for encapsulating that will be calculated by following conditions 1
Extracted amount is set to W1When, W1For more than 0.04ppm below 0.55ppm.
(condition 1：Resin composition for encapsulating will be made with solidfied material powder obtained from 175 DEG C, the condition heat cure of 4 hours
It is broken, obtain crushed material.Then, the crushed material is implemented to be heat-treated under conditions of 150 DEG C, 8 hours, this is collected using hydrogen peroxide
Caused gas.Then, calculated by the sulfate ion amount in the hydrogen peroxide relative to resin composition for encapsulating entirety
Sulphur extracted amount W1)
In this specification, sulphur extracted amount W1Unit ppm represent mass fraction.Also, to sulphur extracted amount W described later2Also phase
Together.
The inventors found that with the resin composition for encapsulating of cryogenic conditions extraction as 150 DEG C, 8 hours
Sulphur extracted amount and semiconductor device reliability between it is relevant.Present embodiment is completed according to this opinion, is led to
Overregulate sulphur extracted amount W1Bad phenomenon is produced to suppress to trigger, such as suppresses the change of closing line and electrode surface, so as to
Improve the reliability of semiconductor device.Here, the reliability as semiconductor device, such as reflux-resisting welded property, height can be enumerated
Temperature keeping characteristic, moisture-proof reliability and hot operation characteristic.
By making sulphur extracted amount W1For more than 0.04ppm, it is possible to increase the sealing formed using resin composition for encapsulating
Resin is relative to the adhesion using Cu as the base materials such as the closing line of main component or lead frame, semiconductor chip.Therefore, it is possible to
Realize reflux-resisting welded property and the excellent semiconductor device of moisture-proof reliability, hot operation.Also, by making sulphur extracted amount W1For
Below 0.55ppm, the raising of the high temperature keeping characteristic of semiconductor device can be realized.Characteristic is taken care of as the high temperature, such as can
To enumerate the connection reliability of connecting portion under the high temperature conditions using Cu between the closing line and semiconductor element of main component
Maintenance.The inventors found that using closing line and the surface that Cu is main component by the metal using Al as main component
The transition zone of the Cu and Al gradual transition of composition is formed between the electrode pad that material is formed, its part is corroded sometimes.This reality
Apply in mode, can speculate and for example keep connection reliability well by suppressing the corrosion.
In addition, from the viewpoint of the reliability for improving the semiconductor device such as reflux-resisting welded property and high temperature keeping characteristic, more
It is preferred that sulphur extracted amount W1For more than 0.1ppm below 0.55ppm, particularly preferably more than 0.2ppm below 0.5ppm.
In resin composition for encapsulating, for example, it is overall relative to resin composition for encapsulating by being calculated by following conditions 2
Sulphur extracted amount be set to W2When, W2/W1Below 120.
(condition 2：Resin composition for encapsulating will be made with solidfied material powder obtained from 175 DEG C, the condition heat cure of 4 hours
It is broken, obtain crushed material.Then, the crushed material is implemented to be heat-treated under conditions of 175 DEG C, 8 hours, this is collected using hydrogen peroxide
Caused gas.Then, calculated by the sulfate ion amount in the hydrogen peroxide relative to resin composition for encapsulating entirety
Sulphur extracted amount W2)
It is considered that the sulphur extraction in the resin composition for encapsulating extracted under hot conditions as 175 DEG C, 8 hours
Measure W2Relative to sulphur extracted amount W1Ratio be W2/W1, bad show is produced with after the above-mentioned bad phenomenon of initiation, transmission
As associated.In present embodiment, based on this opinion, by adjusting W2/W1The reliability of semiconductor device can be improved.
In present embodiment, by making W2/W1For less than 120, high temperature keeping characteristic can be more effectively improved.It is used as this
High temperature takes care of characteristic, can enumerate for example using Cu as the connecting portion between the closing line of main component and semiconductor element in height
The maintenance of connection reliability under the conditions of temperature.Thereby, it is possible to improve the reliability of semiconductor device.In addition, from improve high temperature dwell
From the viewpoint of pipe characteristic, W2/W1More preferably below 95, particularly preferably below 90.Also, W2/W1Lower limit have no spy
Do not limit, such as more than 10 can be set to.
In present embodiment, the sulphur extracted amount W overall relative to resin composition for encapsulating that is calculated by above-mentioned condition 22
Preferably such as more than 3ppm below 65ppm, more preferably more than 5ppm below 60ppm.By making sulphur extracted amount W2To be above-mentioned
Below higher limit, the high temperature keeping characteristic of semiconductor device can be more effectively improved.Also, by making sulphur extracted amount W2To be upper
State more than lower limit, it is main that can further improve the sealing resin formed using resin composition for encapsulating relative to using Cu
The adhesion of the base materials such as the closing line and lead frame of composition etc..Can therefore, it is possible to more effectively improve reflux-resisting welded property and moisture-proof
By the reliability of the semiconductor devices such as property, hot operation.
As described above, sulphur extracted amount W1With sulphur extracted amount W2For containing using with sulphur contained in resin composition for encapsulating
Different indexs is measured to evaluate the reliability of semiconductor device.This sulphur extracted amount W1With sulphur extracted amount W2Can be by suitably
Adjust the species of each composition contained in such as resin composition for encapsulating and the preparation of content and resin composition for encapsulating
Method etc. is controlled.As the example of the preparation method of the resin composition for encapsulating, it can enumerate and utilize coupling agent (D)
The surface treatment carried out to inorganic filler described later (C).
Resin composition for encapsulating contains epoxy resin (A) and curing agent (B).Thus, it is possible to use sealing resin group
Compound is formed for by the sealing resin of closing line and semiconductor element encapsulation.
((A) epoxy resin)
As epoxy resin (A), the monomer that there is more than 2 epoxy radicals in 1 intramolecular, oligomer can be used, gathered
Compound is whole, and its molecular weight and molecular structure are not particularly limited.
In the present embodiment, as epoxy resin (A), such as biphenyl type epoxy resin can be enumerated；Bisphenol type epoxy
The bisphenol-type epoxy resins such as resin, bisphenol f type epoxy resin, tetramethyl bisphenol f type epoxy resin；Stilbene type epoxy resin；Phenol
The phenolic resin varnish type epoxy resins such as phenolic resin varnish type epoxy resin, cresol novolak type epoxy resin；Tris-phenol type ring
The polyfunctional epoxy resins such as oxygen tree fat, alkyl-modified tris-phenol type epoxy resin；Phenol aralkyl with phenylene skeleton
The aralkyl-type epoxy resins such as type epoxy resin, the phenol aralkyl type epoxy resin with biphenylene skeleton；Dihydroxy
Naphthalene type epoxy resin, by the naphthol type epoxy resin such as epoxy resin obtained from the dimer glycidyl ether of dihydroxy naphthlene；
The epoxy resin containing triazine core such as triglycidyl group isocyanuric acid ester, monoallyl diglycidyl isocyanuric acid ester；Two
Cyclopentadiene is modified the bridged cycloalkyl hydrocarbon compounds such as phenol-type epoxy resin and is modified phenol-type epoxy resin, and these materials can be used alone
One kind, can also be simultaneously using two or more.Among them, aralkyl-type epoxy resin, biphenyl type epoxy resin, bisphenol A-type
The bisphenol-type epoxy resins such as epoxy resin, bisphenol f type epoxy resin and tetramethyl bisphenol f type epoxy resin and Stilbene type ring oxygen
Resin preferably has crystalline resin.
As epoxy resin (A), particularly preferably using containing selected from the epoxy resin shown in following formula (1), following formula (2)
The resin of at least one of epoxy resin shown in shown epoxy resin and following formula (3).
(in formula (1), Ar1Phenylene or naphthylene are represented, in Ar1In the case of naphthylene, glycidyl ether can key
Together in any position in α positions, β positions.Ar2Represent any group in phenylene, biphenylene or naphthylene.R5And R6Respectively
Independently represent the alkyl of carbon number 1~10.G is 0~5 integer, and h is 0~8 integer.n3The degree of polymerization is represented, it is average
It is worth for 1~3)
(in formula (2), multiple R be present9Separately represent the alkyl of hydrogen atom or carbon number 1~4.n5Represent poly-
Right, its average value is 0~4)
(in formula (3), multiple R be present10And R11Separately represent the alkyl of hydrogen atom or carbon number 1~4.n6
The degree of polymerization is represented, its average value is 0~4)
The content of epoxy resin (A) in resin composition for encapsulating is not particularly limited, such as relative to sealing tree
Oil/fat composition is preferably integrally below the mass % of more than 1 mass % 50, special more preferably more than 2 mass % below 30 mass %
You Xuanwei not below the mass % of more than 5 mass % 20.By the way that the content of epoxy resin (A) is set to more than above-mentioned lower limit, energy
It is enough to suppress to engage thread breakage because caused by rising the viscosity of resin composition for encapsulating.Also, by by epoxy resin (A)
Content is set to below above-mentioned higher limit, it is possible to increase the moisture-proof reliability of semiconductor device and reflux-resisting welded property.
((B) curing agent)
As the curing agent (B) contained by resin composition for encapsulating, such as polyaddition type curing agent, catalyst can be roughly divided into
Type curing agent and condensed type curing agent this three class.
As polyaddition type curing agent used in curing agent (B), such as can enumerate：Including diethylenetriamines
(DETA), the aliphatic polyamine such as trien (TETA), m-xylene diamine (MXDA), diaminodiphenyl-methane (DDM),
The aromatic polyamines such as m-phenylene diamine (MPD) (MPDA), diamino diphenyl sulfone (DDS) and dicyandiamide (DICY), organic acid dihydrazide
Deng polyamine compounds；It is alicyclic including hexahydrophthalic anhydride (HHPA), methyl tetrahydrophthalic anhydride (MTHPA) etc.
The aromatic anhydrides such as acid anhydrides, trimellitic anhydride (TMA), pyromellitic acid anhydride (PMDA), benzophenone tetrabasic carboxylic acid (BTDA)
Deng acid anhydrides；The phenolic resin such as novolak phenolics, polyvinyl phenol system curing agent；Polysulfide, thioesters, thioether etc.
Poly-thiol compound；The isocyanate compounds such as isocyanate prepolymer, blocked isocyanate；Polyester resin containing carboxylic acid etc. has
Machine acids etc..
As catalyst type curing agent used in curing agent (B), such as can enumerate：Benzyldimethylamine, 2,4 (BDMA),
The tertiary amine compounds such as 2,4,6- tri- (dimethylaminomethyl) phenol (DMP-30)；2-methylimidazole, 2-ethyl-4-methylimidazole
(EMI24) imidazolium compounds such as；Lewis acids such as BF3 complexes etc..
As condensed type curing agent used in curing agent (B), such as can enumerate：Resol type phenol resin；First containing hydroxyl
The urea resins such as the urea resin of base；Melmacs such as the melmac containing methylol etc..
Among them, from the viewpoint for the balance for improving flame resistance, moisture-proof, electrical characteristics, curability and storage stability etc.
Consider, preferably phenolic resin system curing agent.As phenolic resin system curing agent, can use an intramolecular have 2 with
Monomer, oligomer, the polymer of upper phenolic hydroxyl group are whole, and its molecular weight, molecular structure are not particularly limited.
As phenolic resin system curing agent used in curing agent (B), such as phenol resol resins, first can be enumerated
The phenolic varnish type resins such as phenol novolac resin, bis-phenol novolaks；Polyvinyl phenol；Tris-phenol type phenolic resin etc.
Multifunctional type phenolic resin；The phenol-formaldehyde resin modifieds such as terpene modified phenolic resin, dicyclopentadiene-modified phenolic resin；With Asia
The phenol aralkyl resin of phenyl skeleton and/or biphenylene skeleton, there is the naphthols of phenylene and/or biphenylene skeleton virtue
The aralkyl-type resin such as alkyl resin；Bisphenol compounds such as bisphenol-A, Bisphenol F etc., it can be used alone among these,
Can be simultaneously using two or more.
As curing agent (B), particularly preferably using at least one kind of curing agent in the compound shown in following formula (4).
(in formula (4), Ar3Phenylene or naphthylene are represented, in Ar3In the case of naphthylene, hydroxyl is bonding in α positions, β
Any position in position.Ar4Represent any group in phenylene, biphenylene or naphthylene.R7And R8Separately represent
The alkyl of carbon number 1~10.I is 0~5 integer, and j is 0~8 integer.n4The degree of polymerization is represented, its average value is 1~3)
The content of curing agent (B) in resin composition for encapsulating is not particularly limited, such as relative to sealing resin
Composition is preferably integrally below the mass % of more than 2 mass % 15, more preferably more than 3 mass % below 13 mass %, especially
Preferably more than 4 mass % below 11 mass %.By the way that the content of curing agent (B) is set to more than above-mentioned lower limit, Neng Goushi
Now there is the resin composition for encapsulating of abundant mobility, realize the raising of mouldability.Also, pass through containing curing agent (B)
Amount is set to below above-mentioned higher limit, it is possible to increase the moisture-proof reliability of semiconductor device and reflux-resisting welded property.
((C) filler)
Resin composition for encapsulating can also for example contain filler (C).As filler (C), it can be used common half
Filler used in conductor encapsulating epoxy resin composition, such as can enumerate：Melt spherical silicon dioxide, melting crushes
The inorganic fillers such as silica, crystalline silica, talcum, aluminum oxide, titanium white, silicon nitride；Organosilicon powder, polyethylene powder
The organic fillers such as end.Among them, particularly preferably using melting spherical silicon dioxide.These fillers can be used alone one
Kind, can also be simultaneously using two or more.
Also, as filler (C) shape, it is not particularly limited, is glued from the melting for suppressing resin composition for encapsulating
Preferably it is just spherical and broad particle distribution as much as possible from the viewpoint of the rising of degree and the content of raising filler.
The content of filler (C) in resin composition for encapsulating is not particularly limited, such as relative to sealing resin
Composition is preferably integrally below the mass % of more than 35 mass % 95, special more preferably more than 50 mass % below 93 mass %
You Xuanwei not below the mass % of more than 65 mass % 90., can by the way that the content of filler (C) is set to more than above-mentioned lower limit
Agent of low hygroscopicity and low heat expansion are improved, can more effectively improve moisture-proof reliability and reflux-resisting welded property.Also, by that will fill out
The content for filling agent (C) is set to below above-mentioned higher limit, can be suppressed caused by the mobility reduction of resin composition for encapsulating
The reduction of mouldability and closing line flowing etc. because of caused by high viscosity.
((D) coupling agent)
Coupling agent (D) can be used to implement to be surface-treated to filler (C).As coupling agent (D), such as ring can be used
The various silicon such as oxosilane, hydrosulphonyl silane, amino silane, alkyl silane, ureido silane, vinyl silanes, metering system base silane
Coupling agent known to methane series compound, titanium sub-group compound, aluminium chelate compound class, aluminium/zirconium compound etc..If example is carried out to them
Show, can enumerate：Vinyl trichlorosilane, vinyltrimethoxy silane, VTES, vinyl three (β-
Methoxy ethoxy) silane, γ-methacryloxypropyl trimethoxy silane, β-(3,4- expoxycyclohexyls) ethyl
Trimethoxy silane, γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxypropyl group triethoxysilane, γ-
Glycidoxypropyl dimethoxysilane, γ-methacryloyloxypropyl methyl diethoxy silane, γ-methyl
Acryloxypropyl triethoxysilane, vinyltriacetoxy silane, γ mercaptopropyitrimethoxy silane, γ-ammonia
Base propyl-triethoxysilicane, γ-anilino- propyl trimethoxy silicane, γ-anilino- hydroxypropyl methyl dimethoxysilane,
γ-[double (beta-hydroxyethyls)] aminopropyltriethoxywerene werene, N- β-(amino-ethyl)-gamma-amino propyl trimethoxy silicane,
N- β-(amino-ethyl)-γ aminopropyltriethoxy silane, N- β-(amino-ethyl)-gamma-amino hydroxypropyl methyl dimethoxy
Silane, N- phenyl-gamma-amino propyl trimethoxy silicane, γ-(beta-aminoethyl) aminopropyldimethoxy methyl-monosilane,
N- (trimethoxy-silylpropyl) ethylenediamine, N- (dimethoxy-methyl silicyl isopropyl) ethylenediamine, methyl trimethoxy
TMOS, dimethyldimethoxysil,ne, MTES, N- β-(N- vinylbenzylaminoethyls)-γ-ammonia
Base propyl trimethoxy silicane, γ-r-chloropropyl trimethoxyl silane, hexamethyldisilane, vinyltrimethoxy silane, γ-
Mercaptopropyi methyl dimethoxysilane, 3- NCOs propyl-triethoxysilicane, 3- acryloxypropyl trimethoxies
The silane series coupling agent such as hydrolysate of base silane, 3- triethoxysilyls-N- (1,3- dimethyl-butylidene) propyl group amine；
The isostearoyl base titanate esters of isopropyl three, isopropyl three (dioctylphyrophosphoric acid) titanate esters, three (N- aminoethyl-aminos ethyls)
Double (two-tridecyl phosphorous acid) titanate esters of isopropyl titanate, four octyl groups, four (2,2- diene propoxy methyl -1- butyl) are double
(two-tridecyl) phosphito titanate, double (dioctylphyrophosphoric acid) fluoroacetic acid titanate esters, double (dioctylphyrophosphoric acid) ethylidene
Titanate esters, the caprylyl titanate esters of isopropyl three, isopropyl Dimethylacryloyl isostearoyl base titanate esters, isopropyl three (ten
Dialkyl benzene sulfonyl) titanate esters, isopropyl stearyl diallyl titanate esters, isopropyl three (dioctyl phosphito) titanium
The titanate esters system coupling agents such as double (dioctyl phosphito) titanate esters of acid esters, the cumyl phenyl titanate esters of isopropyl three, tetra isopropyl.It
The one kind that can be used alone, can also be simultaneously using two or more.Among them, more preferably epoxy silane, hydrosulphonyl silane, amino
The silane based compound such as silane, alkyl silane, ureido silane or vinyl silanes.Also, partly led from reflux-resisting welded property etc. is improved
From the viewpoint of the reliability of body device, particularly preferably using hydrosulphonyl silane.
The surface treatment carried out using coupling agent (D) to filler (C) can for example be carried out as follows.First, will
After filler (C) input mixer, start to stir, further put into coupling agent (D) wherein and stir 1~5 minute afterwards, filled out
Fill the mixture of agent (C) and coupling agent (D).Then, the mixture is taken out and stood from mixer.Time of repose can fit
Work as selection, such as can be 3 minutes~1 hour.The filling of surface treatment is implemented thereby, it is possible to be utilized coupling agent (D)
Agent (C).Also, heat treatment further can also be implemented to the filler (C) after stewing process.Heat treatment for example can 30~
Carried out under conditions of 80 DEG C, 0.1~10 hour.Also, in the present embodiment, can also by one side using sprayer to stirring
Mix the filler (C) in machine and spray coupling agent (D) while being stirred to filler (C), obtain filler (C) and coupling agent
(D) mixture.As sprayer, such as the device for spraying fine droplets for possessing second fluid nozzle etc. can be used.It is logical
Cross using this sprayer, more uniformly filler (C) surface can be handled using coupling agent, therefore preferably.
In the present embodiment, such as by adjusting the condition of above-mentioned surface treatment, sulphur extracted amount W can be controlled1And W2。
The condition of the surface treatment can enumerate whether using sprayer, time of repose, have no heat treatment and heat treatment condition etc..
In addition, coupling agent (D) to filler (C) except by carrying out above-mentioned surface treatment to be contained in sealing resin group
Beyond situation in compound, it can also be mixed by direct plungeing into mixer with other compositions to be contained in sealing resin group
In compound.
The content of coupling agent (D) in resin composition for encapsulating is not particularly limited, such as relative to sealing resin
Composition is preferably integrally below the mass % of more than 0.05 mass % 2, special more preferably more than 0.1 mass % below 1 mass %
You Xuanwei not below the mass % of more than 0.15 mass % 0.5.By the way that the content of coupling agent (D) is set to more than above-mentioned lower limit,
The favorable dispersibility of the filler (C) in resin composition for encapsulating can be made.It is reliable therefore, it is possible to more effectively improve moisture-proof
Property and reflux-resisting welded property etc..By the way that the content of coupling agent (D) is set to below above-mentioned higher limit, sealing resin can be combined
The good fluidity of thing, so as to realize the raising of mouldability.
((E) ion capturing agent)
Resin composition for encapsulating can also for example contain ion capturing agent (E).
As ion capturing agent (E), it is not particularly limited, such as hydrotalcite and polyvalent metal ackd salt etc. can be enumerated
Inorganic ion exchanger.They can be used alone, can also be simultaneously using two or more.It is high from improving among them
From the viewpoint of temperature keeping characteristic, particularly preferably using hydrotalcite.
The content of ion capturing agent (E) in resin composition for encapsulating is not particularly limited, such as is used relative to sealing
Resin combination is preferably integrally below the mass % of more than 0.05 mass % 1,0.8 mass % more preferably more than 0.1 mass %
Hereinafter, particularly preferably more than 0.15 mass % below 0.5 mass %.By the way that the content of ion capturing agent (E) is set into above-mentioned
More than lower limit, it can more effectively improve high temperature keeping characteristic.Further, it is possible to it is reliably suppressed closing line and semiconductor element
Between corrosion, so as to keeping connection reliability well.Also, by the way that the content of ion capturing agent (E) is set into the above-mentioned upper limit
Value is following, it is possible to increase the moisture-proof reliability of semiconductor device and reflux-resisting welded property.
((F) curing accelerator)
Resin composition for encapsulating can also for example contain curing accelerator (F).
Curing accelerator (F) is as long as can promote the epoxy radicals of epoxy resin (A) and curing agent (B) (such as phenolic resin
Be the phenolic hydroxyl group of curing agent) cross-linking reaction, common epoxy resin composition for encapsulating semiconductor institute can be used
The curing accelerator used.Organic phosphine can be for example enumerated as curing accelerator (F), four taken for phosphonium compounds, phosphate sweet tea
Dish alkali cpd, the adduct of phosphine compound and naphtoquinone compounds, the adduct etc. of phosphonium compounds and silane compound contain phosphorus atoms
Compound；Amidine illustrated in 1,8- diazabicyclos (5,4,0) endecatylene -7, benzyldimethylamine, 2,4,2-methylimidazole etc.
Or tertiary amine, above-mentioned amidine, the compound of nitrogen atom such as quaternary ammonium salt etc. of amine can be further enumerated, is used alone in these a kind of
Or simultaneously using two or more.
The content of curing accelerator (F) is preferably integrally 1 matter of more than 0.05 mass % relative to resin composition for encapsulating
Below % is measured, more preferably more than 0.1 mass % below 0.8 mass %.By the way that the content of curing accelerator (F) is set into above-mentioned
More than lower limit, can suppress the curability of resin composition for encapsulating reduces.Also, pass through containing curing accelerator (F)
Amount is set to below above-mentioned higher limit, can be suppressed the mobility of resin composition for encapsulating and be reduced.
In resin composition for encapsulating, following various additives further can be suitably mixed as needed：Carbon black, iron
The colouring agents such as pellet；The low stress composition such as silicon rubber；The higher fatty acids such as the native paraffins such as Brazil wax, synthetic wax, zinc stearate
And its releasing agent such as metallic salt or paraffin；The fire retardants such as aluminium hydroxide, magnesium hydroxide, Firebrake ZB, zinc molybdate, phosphonitrile；It is anti-
Oxidant etc..
As resin composition for encapsulating, such as it can use and be mixed method known to above-mentioned each components utilising,
And melting mixing is carried out using kneading machines such as roller, kneader or extruders, carry out crushing etc. appropriate adjustment as needed after cooling
The composition of decentralization or mobility etc..
Below, the semiconductor device 100 of present embodiment is illustrated.
Semiconductor device 100 possesses semiconductor element 20, closing line 40 and sealing resin 50.Closing line 40, which is connected to, partly leads
Volume elements part 20 and using Cu as main component., will also, sealing resin 50 is made up of the solidfied material of above-mentioned resin composition for encapsulating
Semiconductor element 20 and closing line 40 seal.
Semiconductor element 20 is equipped on base material 30.Base material 30 is, for example, lead frame or organic substrate.Also, base material 30 connects
It is connected to closing line 40.In Fig. 2 exemplified with the chip bonding pad 32 in the base material 30 as lead frame via bonding die material (die
Attach material) 10 semiconductor element mounted thereons 20 situation.As the base material 30 of lead frame, such as by being closed with Cu or 42
Gold is formed for the metal material of main component.In addition, semiconductor element 20 can also be configured on other semiconductor elements.
In the upper surface of semiconductor element 20, such as formed with multiple electrodes pad 22.It is arranged at semiconductor element 20
At least superficial layer of electrode pad 22 is for example made up of the metal material using Al as main component.Thereby, it is possible to improve using Cu as
The closing line 40 of main component and the connection reliability of electrode pad 22.
It is exemplified with closing line 40 that the outer lead 34 in the electrode pad 22 of semiconductor element 20 and base material 30 is electric in fig. 2
The situation of connection.
Sealing resin 50 is made up of the solidfied material of above-mentioned resin composition for encapsulating.Therefore, to base material 30 and closing line 40
Adhesion it is good, reflux-resisting welded property and moisture-proof reliability, the semiconductor device 100 of hot operation excellent can be obtained.
It is made up of in closing line 40 metal material using Cu as main component and base material 30 is by the gold using Cu or 42 alloys as main component
In the case of belonging to material composition, the effect can be particularly marked degree obtained.Also, the height of semiconductor device 100 can also be realized
The raising of temperature keeping characteristic.
Semiconductor device 100 for example manufactures as follows.
First, semiconductor element mounted thereon 20 on the substrate 30.Then, it is the closing line 40 of main component by base to utilize using Cu
Material 30 is connected to each other with semiconductor element 20.Then, by semiconductor element 20 and engaged using above-mentioned resin composition for encapsulating
Line 40 seals.Method as sealing moulding is not particularly limited, such as can be enumerated and be passed mold forming method or compression forming methods.By
This, can manufacture semiconductor device 100.
Embodiment
Then, embodiments of the invention are illustrated.
(resin composition for encapsulating)
To embodiment 1~10 and each example of comparative example 1~3, resin composition for encapsulating is prepared as follows.First,
Inorganic filler (C) is implemented to be surface-treated using the coupling agent (D) of the use level shown in table 1.Then, according to shown in table 1
Coordinate, mixed each composition with 15~28 DEG C using mixer.Then, resulting mixture roller is kneaded with 70~100 DEG C.
Then, the mixture after mixing is cooled down and crushes and obtain composition epoxy resin.Wherein, each composition in table 1 is detailed
Content is as described below.Also, the unit in table 1 is quality %.
(A) epoxy resin
Epoxy resin 1：Phenol aralkyl type epoxy resin (NC-3000P, the Japanese chemical drug strain formula of the skeleton containing biphenylene
Commercial firm manufactures)
Epoxy resin 2：Biphenyl type epoxy resin (YX4000K, Mitsubishi chemical Co., Ltd's manufacture)
(B) curing agent
Curing agent 1：Phenol aralkyl resin (MEH-7851SS, the bright and chemical conversion Co. Ltd. system of the skeleton containing biphenylene
Make)
Curing agent 2：The phenol aralkyl resin (XLC-4L, Mitsui Chemicals, Inc's manufacture) of the skeleton containing phenylene
(C) filler
Filler 1：Silica (26 μm of average grain diameter, specific surface area 2.4mm2/g)
Filler 2：Silica (SO-25R, Admatechs Company Limited are manufactured, 0.5 μm of average grain diameter,
Specific surface area 6.0mm2/g)
(D) coupling agent
γ mercaptopropyitrimethoxy silane (Shin-Etsu Chemial Co., Ltd manufactures, KBM-803)
(E) ion capturing agent
Hydrotalcite (DHT-4H, Kyowa Chemical Industry Co., Ltd's manufacture)
(F) curing accelerator
Curing accelerator 1：Compound shown in following formula (5)
Curing accelerator 2：Compound shown in following formula (6)
(G) releasing agent
Brazil wax
In embodiment 1~4,7~12 and comparative example 1~3, as follows using coupling agent (D) to inorganic filler
(C) it is surface-treated.First, after filler 1 and filler 2 being put into mixer, start to stir, then input coupling thereto
Agent (D) simultaneously stirs them 3.0 minutes, obtains the mixture of filler 1, filler 2 and coupling agent (D).Then, this is mixed
Thing takes out from mixer, stands the time (time of repose of table 1) shown in table 1.Thus, it is utilized coupling agent (D) progress
The filler (C) of surface treatment.
In embodiment 5, after said mixture is stood, heat is carried out to said mixture under conditions of 55 DEG C, 3 hours
Processing, in addition, is surface-treated similarly to Example 1.
In embodiment 6, obtain the mixture of filler 1, filler 2 and coupling agent (D) as follows, except this with
Outside, it is surface-treated similarly to Example 1.First, filler 1 and filler 2 are put into mixer, they is mixed.
Then, while spraying coupling agent to the filler 1 in mixer and filler 2 using sprayer, while they are stirred into 3.0 points
Clock, obtain the mixture of filler 1, filler 2 and coupling agent (D).Then, the mixture is taken out from mixer, stood
Time (time of repose of table 1) shown in table 1.
(sulphur extracted amount W1Measure)
For each embodiment and each comparative example, determine as follows whole relative to resulting resin composition for encapsulating
The sulphur extracted amount W of body1.First, resin composition for encapsulating will be made with solidification obtained from 175 DEG C, the condition heat cure of 4 hours
Thing crushes, and obtains crushed material.Then, above-mentioned crushed material is implemented to be heat-treated under conditions of 150 DEG C, 8 hours, utilizes hydrogen peroxide
Collect now caused gas.Then, calculated by the sulfate ion amount in above-mentioned hydrogen peroxide relative to sealing resin group
The overall sulphur extracted amount W of compound1.Unit in table 1 is ppm.
(sulphur extracted amount W2Measure)
For each embodiment and each comparative example, determine as follows whole relative to resulting resin composition for encapsulating
The sulphur extracted amount W of body2.First, resin composition for encapsulating will be made with solidification obtained from 175 DEG C, the condition heat cure of 4 hours
Thing crushes, and obtains crushed material.Then, above-mentioned crushed material is implemented to be heat-treated under conditions of 175 DEG C, 8 hours, utilizes hydrogen peroxide
Collect now caused gas.Then, calculated by the sulfate ion amount in above-mentioned hydrogen peroxide relative to sealing resin group
The overall sulphur extracted amount W of compound2.Unit in table 1 is ppm.
(making of semiconductor device)
To embodiment 1~12, each example of comparative example 1~3, semiconductor device is made as follows.
Will be provided with aluminum electrode pad TEG (Test Element Group, test element group) chip (3.5mm ×
3.5mm) it is equipped in the chip bonding pad portion for the lead frame that surface has carried out plating using Ag.Then, using by Cu99.9%'s
The closing line that metal material is formed, with 120 μm of electrode pads (being denoted as electrode pad below) and lead frame by TEG chips of line-spacing
Outer lead part wire bonding.
Die forming machine is passed in 175 DEG C of mold temperature, injection pressure 10.0MPa, the condition of 2 minutes hardening times using low pressure
It is lower that sealing moulding is carried out to the structure obtained as described above using resin composition for encapsulating, make semiconductor package body.It
Afterwards, resulting semiconductor package body solidify afterwards are obtained into semiconductor device under conditions of 175 DEG C, 4 hours.
(MSL (reflux-resisting welded property evaluation))
To embodiment 1~12, each example of comparative example 1~3, by 12 resulting semiconductor devices 85 DEG C, it is relatively wet
168 hours are stood in the environment of degree 60%, carries out IR reflow process (260 DEG C) afterwards.Then, ultrasonic flaw detecting device is utilized
Inside semiconductor device after observation processing, calculate in the area peeled off caused by the interface of sealing resin and lead frame.To institute
There is semiconductor device, situation of the peels off area less than 5% is designated as ◎, less than more than 5% 10% situation is designated as zero, will be super
Cross 10% situation be designated as ×.
(HTSL (high temperature keeping evaluating characteristics))
To embodiment 1~12, each example of comparative example 1~3, by environment of the resulting semiconductor device keeping at 150 DEG C
Under, and every the resistance value between the electrode pad and closing line of 24 hours measure semiconductor chips, by the value relative to initial
Value add 20% semiconductor device be designated as it is bad.Even if by keeping do not produce within 2000 hours yet it is bad be designated as ◎, will be
Generated between 1000~2000 hours it is bad be designated as zero, will be generated within 1000 hours it is bad be designated as ×.
As shown in table 1, in embodiment 1~12, reflux-resisting welded property and high temperature keeping characteristic obtain good result.It is real
Example 1~6,8,10,12 is applied compared with embodiment 7,9,11, shows more excellent high temperature keeping characteristic.
Claims (7)
1. a kind of resin composition for encapsulating, it is used for semiconductor element and engagement linear sealing, the closing line and described half
Conductor element is connected and using Cu as main component, and the resin composition for encapsulating is characterised by：
Containing epoxy resin (A) and curing agent (B),
The sulphur extracted amount overall relative to the resin composition for encapsulating calculated by condition 1 is set to W1When, W1For
More than 0.04ppm below 0.55ppm,
Condition 1：The resin composition for encapsulating will be made with solidfied material powder obtained from 175 DEG C, the condition heat cure of 4 hours
It is broken, obtain crushed material；Then, the crushed material is implemented to be heat-treated under conditions of 150 DEG C, 8 hours, collected using hydrogen peroxide
This caused gas；Then, calculated by the sulfate ion amount in the hydrogen peroxide and combined relative to the sealing resin
The overall sulphur extracted amount W of thing1。
2. resin composition for encapsulating according to claim 1, it is characterised in that：
The sulphur extracted amount overall relative to the resin composition for encapsulating calculated by condition 2 is set to W2When, W2/W1120
Hereinafter,
Condition 2：The resin composition for encapsulating will be made with solidfied material powder obtained from 175 DEG C, the condition heat cure of 4 hours
It is broken, obtain crushed material；Then, the crushed material is implemented to be heat-treated under conditions of 175 DEG C, 8 hours, collected using hydrogen peroxide
This caused gas；Then, calculated by the sulfate ion amount in the hydrogen peroxide and combined relative to the sealing resin
The overall sulphur extracted amount W of thing2。
3. resin composition for encapsulating according to claim 1 or 2, it is characterised in that：
The resin composition for encapsulating also contains ion capturing agent (E).
4. resin composition for encapsulating according to claim 3, it is characterised in that：
Relative to whole solid state components of the resin composition for encapsulating, the content of the ion capturing agent (E) is 0.05 matter
Measure below the mass % of more than % 1.
5. a kind of semiconductor device, it is characterised in that possess：
Semiconductor element；
Closing line, it is connected with the semiconductor element and using Cu as main component；With
Sealing resin, it is made up of the solidfied material of the resin composition for encapsulating any one of Claims 1-4, and
By the semiconductor element and the engagement linear sealing.
6. semiconductor device according to claim 5, it is characterised in that：
The semiconductor device be also equipped with it is carrying the semiconductor element and be connected with the closing line, with Cu or 42
Alloy is the lead frame or organic substrate of main component.
A kind of 7. manufacture method of semiconductor device, it is characterised in that：
Possess using the resin composition for encapsulating any one of Claims 1 to 44 that semiconductor element and closing line is close
The process of envelope, the closing line are connected with the semiconductor element and using Cu as main component.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2015/058767 WO2016151733A1 (en) | 2015-03-23 | 2015-03-23 | Resin composition for encapsulation, semiconductor device, and process for producing semiconductor device |
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| CN107429040B CN107429040B (en) | 2021-02-19 |
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| Country | Link |
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| KR (1) | KR102264524B1 (en) |
| CN (1) | CN107429040B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108485185A (en) * | 2018-03-19 | 2018-09-04 | 长兴电子材料（昆山）有限公司 | A kind of automobile-used based epoxy resin constituent of high reliability high fluidity and its application |
| CN111433284A (en) * | 2017-12-06 | 2020-07-17 | 住友电木株式会社 | Epoxy resin composition and electronic device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102459397A (en) * | 2009-06-22 | 2012-05-16 | 住友电木株式会社 | Resin composition for sealing semiconductors, and semiconductor device |
| CN102666724A (en) * | 2009-12-07 | 2012-09-12 | 住友电木株式会社 | Epoxy resin composition for semiconductor encapsulation, cured product thereof, and semiconductor device using epoxy resin composition |
| JP2014232854A (en) * | 2013-05-30 | 2014-12-11 | 住友ベークライト株式会社 | Semiconductor device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4014488B2 (en) * | 2002-10-28 | 2007-11-28 | 住友ベークライト株式会社 | Epoxy resin composition and semiconductor device |
| CN1908065B (en) * | 2005-08-05 | 2010-12-08 | 信越化学工业株式会社 | Epoxy resin composition and semiconductor device |
| JP2007051198A (en) * | 2005-08-17 | 2007-03-01 | Kyocera Chemical Corp | Epoxy resin composition for sealing semiconductor |
| JP2013067694A (en) | 2011-09-21 | 2013-04-18 | Panasonic Corp | Epoxy resin composition for sealing semiconductor, and semiconductor device |
| JP6398167B2 (en) * | 2013-10-04 | 2018-10-03 | 住友ベークライト株式会社 | Resin composition for sealing, semiconductor device, and method for manufacturing semiconductor device |
-
2015
- 2015-03-23 WO PCT/JP2015/058767 patent/WO2016151733A1/en active Application Filing
- 2015-03-23 KR KR1020177023577A patent/KR102264524B1/en active IP Right Grant
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102459397A (en) * | 2009-06-22 | 2012-05-16 | 住友电木株式会社 | Resin composition for sealing semiconductors, and semiconductor device |
| CN102666724A (en) * | 2009-12-07 | 2012-09-12 | 住友电木株式会社 | Epoxy resin composition for semiconductor encapsulation, cured product thereof, and semiconductor device using epoxy resin composition |
| JP2014232854A (en) * | 2013-05-30 | 2014-12-11 | 住友ベークライト株式会社 | Semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111433284A (en) * | 2017-12-06 | 2020-07-17 | 住友电木株式会社 | Epoxy resin composition and electronic device |
| CN111433284B (en) * | 2017-12-06 | 2021-01-05 | 住友电木株式会社 | Epoxy resin composition and electronic device |
| CN108485185A (en) * | 2018-03-19 | 2018-09-04 | 长兴电子材料（昆山）有限公司 | A kind of automobile-used based epoxy resin constituent of high reliability high fluidity and its application |
| CN108485185B (en) * | 2018-03-19 | 2020-06-30 | 长兴电子材料（昆山）有限公司 | High-reliability high-fluidity epoxy resin composition for vehicles and application thereof |
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| KR102264524B1 (en) | 2021-06-15 |
| KR20170130378A (en) | 2017-11-28 |
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| WO2016151733A1 (en) | 2016-09-29 |
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