CN107421524A - A kind of quartz crystal oscillation drive circuit and its monolithic integrated optical circuit - Google Patents
A kind of quartz crystal oscillation drive circuit and its monolithic integrated optical circuit Download PDFInfo
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- CN107421524A CN107421524A CN201710657230.9A CN201710657230A CN107421524A CN 107421524 A CN107421524 A CN 107421524A CN 201710657230 A CN201710657230 A CN 201710657230A CN 107421524 A CN107421524 A CN 107421524A
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- 239000013078 crystal Substances 0.000 title claims abstract description 70
- 239000010453 quartz Substances 0.000 title claims abstract description 64
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 230000010355 oscillation Effects 0.000 title claims abstract description 43
- 230000003287 optical effect Effects 0.000 title claims abstract description 9
- 238000001514 detection method Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 6
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/38—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator frequency-determining element being connected via bridge circuit to closed ring around which signal is transmitted
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L5/00—Automatic control of voltage, current, or power
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- Radar, Positioning & Navigation (AREA)
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- Oscillators With Electromechanical Resonators (AREA)
Abstract
The present invention relates to a kind of quartz crystal oscillation drive circuit and its monolithic integrated optical circuit, wherein, the quartz crystal oscillation drive circuit is made up of quartz crystal, trans-impedance amplifier, variable gain amplifier and amplitude detection unit.In the present invention, the piezoelectricity sensor current signal of trans-impedance amplifier detection quartz crystal one end is simultaneously converted to voltage signal, then the signal is controlled to the gain of variable gain amplifier by amplitude detection unit, finally makes loop works in fixed ampllitude pure oscillation state；In addition, foregoing quartz crystal oscillation drive circuit can be adapted to carry out single-chip integration, the advantage of the invention is that integrated circuit has simple in construction, small volume, the low in energy consumption and suitable single chip integrated advantage of standard CMOS process.
Description
Technical field
The present invention relates to inertia sensing field, more particularly, to a kind of quartz tuning-fork gyro drive circuit, particularly one kind
Quartz crystal oscillation drive circuit and its monolithic integrated optical circuit.
Background technology
Quartz Gyro is a kind of angular-rate sensor of medium accuracy, has the advantages that small volume, low in energy consumption, general use
Self-oscillation mode realizes excitation driving.
Traditional excitation drive circuit typically uses square wave excitation, and advantage is that circuit structure is simple, and shortcoming is harmonic component
More interference are big, and driving frequency stability is poor.Preferably excitation type of drive is sinusoidal excitation, and circuit provides critical gain, crystal
Just at pure oscillation state, there is optimal frequency stability, the interference to other circuits is also minimum.
Compared with quartz crystal used in usual clock circuit, quartz Gyro crystal quality factor is relatively low, can not use common
One-stage amplifier realize vibration.CN102624335A, CN1909360A propose a kind of relatively simple crystal oscillating circuit,
But its oscillation amplitude and DC level are all mainly maintained by single metal-oxide-semiconductor, difficulty is likely to occur for the relatively low quartz Gyro of Q values
The problem of with starting of oscillation.
Generally realize sine-wave excitation driving quartz Gyro crystal oscillation drive circuit structure as shown in figure 1, prime across
The piezoelectric signal that impedance amplifier U1 exports to quartz crystal first end carries out pre-amplification, and the signal passes through variable gain amplifier again
Feedback driving crystal second end after U2 further amplifies.Crystal oscillation state is determined by loop signal gain, if loop gain
Relatively low, oscillation amplitude can be less and less, and final crystal can not vibrate；If loop gain is higher, oscillation amplitude can be increasing,
Clipping state is eventually entered into, sine-wave oscillation can not be realized.Loop signal amplitude is detected by amplitude detection circuit U3,
And variable-gain amplifier gain is controlled according to testing result, loop automatic gain control (AGC) is realized, can be increased with control loop
Benefit is stablized in critical condition, realizes pure oscillation.
Patent US5047734A, US5185585A, US5487015A propose sine wave crystal oscillation drive circuit, still
The shortcomings of complicated with circuit structure, volume is big, power consumption height, and hardware requirement is high.CN103684262B proposes for these shortcomings
A kind of sine-wave quartz crystal oscillator circuit structure based on analog circuit, has that circuit structure is simple, low in energy consumption, volume
The advantages that small, but controlled current source+General operational amplifier that its variable gain amplifier is realized using N-channel technotron is real
Existing, amplitude detection circuit realizes that circuit structure is still relative complex using the precision rectifying circuit configuration of diode+General operational amplifier,
And it is not easy to realize using standard CMOS process monolithic.The present invention proposes that a kind of quartz Gyro for realizing sine-wave excitation driving is brilliant
Oscillation body drive circuit structure, especially provide detailed variable gain amplifier and peak detection circuit structure, integrated circuit phase
There is simple circuit, small volume, the low in energy consumption and suitable single chip integrated advantage of standard CMOS process than patent before.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of quartz crystal to vibrate driving electricity
Road and its monolithic integrated optical circuit, for solve the circuit structure of quartz crystal oscillation drive circuit in the prior art it is relative complex and
The problem of being not easy to realize using standard CMOS process monolithic.
In order to achieve the above objects and other related objects, the present invention provides following technical scheme：
A kind of quartz crystal oscillation drive circuit of sine-wave excitation, including it is quartz crystal G1, trans-impedance amplifier U1, variable
Gain amplifier U2, amplitude detection unit U3, the first end of the input of the trans-impedance amplifier U1 and the quartz crystal G1
It is connected, the output end of the trans-impedance amplifier U1 is connected with amplitude detection unit U3 input, the trans-impedance amplifier
U1 output end is connected with the first input end of the variable gain amplifier U2, and passes sequentially through inverting amplifier U7 and decline
The second input for subtracting network U6 with the variable gain amplifier U2 is connected, the output end of the amplitude detection unit U3 with
The gain control input of the variable gain amplifier U2 is connected, the output end of the variable gain amplifier U2 with it is described
Quartz crystal G1 the second end is connected.
The operation principle of foregoing circuit is：Trans-impedance amplifier U1 receives the piezoelectricity induced-current of quartz crystal G1 first ends simultaneously
Ac voltage signal is converted into, amplitude detection unit U3, which changes into the ac voltage signal, can reflect that alternating voltage is believed
The direct current signal of number amplitude, and compared with reference data voltage integrating meter, output signal control variable gain amplifier U2 gain；
Variable gain amplifier U2 output ends driving quartz crystal G1 the second end simultaneously forms whole feedback control loop, after loop stability, electricity
Road is operated in fixed ampllitude pure oscillation state.
Preferably, the variable gain amplifier U2 includes the first PMOSFET transistor M1, the second PMOSFET transistor
M2, the 3rd PMOSFET transistor M3, the 4th PMOSFET transistor M6, the first NMOSFET transistors M4, the 2nd NMOSFET are brilliant
Body pipe M5, the 3rd NMOSFET transistors M7 and the 9th resistance R9；Wherein described first PMOSFET transistor M1 source electrode connects
First power supply, gain control input of the grid as the variable gain amplifier U2, it is brilliant that drain electrode meets the 2nd PMOSFET
The source electrode of body pipe M2 source electrode and the 3rd PMOSFET transistor M3；The grid of the second PMOSFET transistor M2 is made
For the inverting input of the variable gain amplifier U2, drain electrode connects grid and the drain electrode of the first NMOSFET transistors M4；
In-phase input end of the grid of the 3rd PMOSFET transistor M3 as the variable gain amplifier U2, drain electrode connect described
2nd NMOSFET transistors M5 drain electrode；The first NMOSFET transistors M4 is diode-connected, its grid and drain electrode phase
Even, source electrode connects second source；The 2nd NMOSFET transistor M5 source electrodes connect second source, and grid meets the first NMOSFET
Transistor M4 grid, drain electrode meet the grid of the 4th PMOSFET transistor M6 and the 3rd NMOSFET transistors M7
Grid；The source electrode of the 4th PMOSFET transistor M6 connects the first power supply, and drain electrode meets the 3rd NMOSFET transistors M7
Drain electrode；The source electrode of the 3rd NMOSFET transistors M7 connects second source, drains as the variable gain amplifier U2's
Output end；The 9th resistance R9 is simultaneously connected between grid and the drain electrode of the 3rd NMOSFET transistors M7.
Preferably, the peak detector U4 includes the first tail current source I1, the second tail current source I2, the 5th PMOSFET
Transistor M8, the 6th PMOSFET transistor M9, the 4th NMOSFET transistors M10, the 5th NMOSFET transistors M11, the 6th
NMOSFET transistors M12 and the 3rd electric capacity C3；Wherein described 5th PMOSFET transistor M8 grid is as the peak value
Detector U4 input, source electrode connect one end of the first tail current source I1, and drain electrode connects the 4th NMOSFET transistors
M10 drain electrode；The first tail current source I1 mono- terminates the first power supply, another termination the 5th PMOSFET transistor M8's
The source electrode of source electrode and the 6th PMOSFET transistor M9；The grid of the 4th NMOSFET transistors M10 connects the described 5th
NMOSFET transistors M11 grid, source electrode connect second source, and drain electrode connects the grid of the 6th NMOSFET transistors M12；Institute
The source electrode for stating the 6th PMOSFET transistor M9 connects the source electrode of the 5th PMOSFET transistor M8, and grid connects the second tail electricity
Stream source I2 one end, drain electrode connect the drain electrode of the 5th NMOSFET transistors M11；The 5th NMOSFET transistors M11 is
Diode-connected, its grid are connected with drain electrode, and source electrode connects second source；The second tail current source I2 mono- terminates the first power supply,
Another termination the 6th PMOSFET transistor M9 grid；The source electrode of the 6th NMOSFET transistors M12 connects the second electricity
Source, drain electrode connect the grid of the 6th PMOSFET transistor M9 and as the output end of the peak detection circuit U4；Described
Three electric capacity C3 mono- terminate second source, another termination the 6th NMOSFET transistors M12 drain electrode.
The advantages of foregoing circuit, is：Because the variable gain amplifier U2 structures of offer can meet quartz crystal G1 sines
Vibratory stimulation drives demand, while volume small power consumption, precision are high and are adapted to single-chip integration, are adapted to single supply application.Therefore, root
The quartz crystal G1 oscillation drive circuits realized according to the present embodiment have the advantages of small volume, low in energy consumption, precision is high, using sine
Wave excitation it also avoid interference effect of the square wave higher hamonic wave to circuit.
Brief description of the drawings
Fig. 1 is the application background circuit diagram of the present invention.
Fig. 2 is a kind of schematic diagram of the quartz crystal oscillation drive circuit of sine-wave excitation of the present invention.
Fig. 3 is the circuit structure diagram of the quartz crystal oscillation drive circuit of sine-wave excitation of the present invention in one embodiment.
Fig. 4 is the circuit structure diagram of variable gain amplifier in a preferred embodiment in the present invention.
Fig. 5 is the circuit structure diagram of peak detector in a preferred embodiment in the present invention.
Fig. 6 is the equivalent-circuit model schematic diagram of quartz crystal in the present invention.
Embodiment
Embodiments of the present invention are illustrated by particular specific embodiment below, those skilled in the art can be by this explanation
Content disclosed by book understands other advantages and effect of the present invention easily.
See Fig. 2：A kind of schematic diagram of the quartz crystal oscillation drive circuit of sine-wave excitation is given, as illustrated, should
Quartz crystal oscillation drive circuit includes quartz crystal G1, trans-impedance amplifier U1, variable gain amplifier U2, amplitude detection unit
U3, the input of the trans-impedance amplifier U1 are connected with the first end of the quartz crystal G1, the trans-impedance amplifier U1's
Output end is connected with amplitude detection unit U3 input, and output end and the variable gain of the trans-impedance amplifier U1 are put
Big device U2 first input end is connected, and passes sequentially through inverting amplifier U7 and attenuation network U6 and amplify with the variable gain
Device U2 the second input is connected, the output end of the amplitude detection unit U3 and the gain of the variable gain amplifier U2
Control signal is connected, and the output end of the variable gain amplifier U2 is connected with the second end of the quartz crystal G1.
The operation principle of foregoing circuit is：Trans-impedance amplifier U1 receives the piezoelectricity induced-current of quartz crystal G1 first ends simultaneously
Ac voltage signal is converted into, amplitude detection unit U3, which changes into the ac voltage signal, can reflect that alternating voltage is believed
The direct current signal of number amplitude, and compared with reference data voltage integrating meter, output signal control variable gain amplifier U2 gain；
Variable gain amplifier U2 output ends driving quartz crystal G1 the second end simultaneously forms whole feedback control loop, after loop stability, electricity
Road is operated in fixed ampllitude pure oscillation state.
The advantages of foregoing circuit, is：Because the variable gain amplifier U2 structures of offer can meet quartz crystal G1 sines
Vibratory stimulation drives demand, while volume small power consumption, precision are high and are adapted to single-chip integration, are adapted to single supply application.Therefore, root
The quartz crystal G1 oscillation drive circuits realized according to the present embodiment have the advantages of small volume, low in energy consumption, precision is high, using sine
Wave excitation it also avoid interference effect of the square wave higher hamonic wave to circuit.
It is the quartz crystal oscillation drive circuit of above-mentioned sine-wave excitation in reality as a kind of preferred embodiment, such as Fig. 3
A circuit structure diagram in, it is described in detail below by the structure to the circuit and principle to be easy to the skill of this area
Art personnel are better understood from and implemented.
In specific implementation, trans-impedance amplifier U1 includes the first operational amplifier A 1, first resistor R1 and the first electric capacity
C1, wherein first resistor R1 and the first electric capacity C1 are connected in the inverting input and output end of the first operational amplifier A 1 in parallel
Between；The in-phase input end ground connection of first operational amplifier A 1, inverting input and the quartz crystal G1 of the first operational amplifier A 1
First end connection；Input of the inverting input of first operational amplifier A 1 as trans-impedance amplifier U1, the first computing are put
Output end of the big device A1 output end as trans-impedance amplifier U1.Trans-impedance amplifier U1 effect is the quartz for that will detect
The current signal at crystal G1 ends amplifies and is converted to voltage signal.
Further, the inverting amplifier U7 includes the second operational amplifier A 2, second resistance R2 and 3rd resistor
R3, wherein the 3rd resistor R3 is connected in parallel between inverting input and the output end of second operational amplifier A 2, institute
The one end for stating second resistance R2 is connected to the output end of the trans-impedance amplifier U1 as the input of the inverting amplifier U7,
The other end is connected to the inverting input of second operational amplifier A 2；The in-phase input end of second operational amplifier A 2
Ground connection, output end of its output end as the inverting amplifier U7.
Further, the attenuation network U6 includes the 4th resistance R4, the 5th resistance R5 and the 6th resistance R6, wherein
The both ends of the 5th resistance R5 respectively as first, second output end of the attenuation network U6, be connected in parallel it is described can
Between variable-gain amplifier U2 in-phase input end and inverting input；One end of the 4th resistance R4 is as the attenuation network
U6 first input end is connected to the output end of the inverting amplifier U7, the other end as shown in attenuation network U6 it is first defeated
Go out the in-phase input end that end is connected to the variable gain amplifier U2；One end of the 6th resistance R6 is as the attenuation network
Network U6 the second input is connected to the output end of the trans-impedance amplifier U1, the other end as the attenuation network U6 second
Output end is connected to the inverting input of the variable gain amplifier U2.
In specific implementation, the amplitude detection unit U3 includes peak detector U4 and integrator U5, the peak value inspection
The input for surveying device U4 is connected with trans-impedance amplifier U1 output end, for receiving the exchange of shown trans-impedance amplifier U1 outputs
Signal is simultaneously translated into the d. c. voltage signal that can represent AC signal amplitude；An input of the integrator U5 and institute
The output end for stating peak detector U4 is connected, for the d. c. voltage signal that exports the peak detector U4 with being input to
The reference data voltage of another inputs of integrator U5 carries out integral contrast；The output end of the integrator U5 with it is described can
Variable-gain amplifier U2 gain control input connection, to control the multiplication factor of the variable gain amplifier U2.
It can include specifically, above-mentioned integrator U5 obtains particular circuit configurations：3rd operational amplifier A 3, the 7th resistance
R7, the 8th resistance R8 and the second electric capacity C2；Input of the wherein described 7th resistance R7 one end as the integrator U5
The output end of the peak detector U4 is connected to, the other end is connected to the inverting input of the 3rd operational amplifier A 3；
The 8th resistance R8 first connects with the second electric capacity C2, is then connected in parallel to the anti-of the 3rd operational amplifier A 3 again
Between phase input and output end, i.e., described 8th resistance R8 one end is connected to the anti-phase input of the 3rd operational amplifier A 3
End, its other end are connected to one end of the second electric capacity C2, and the other end of the second electric capacity C2 is connected to the 3rd fortune
Calculate amplifier A3 output end；The in-phase input end of 3rd operational amplifier A 3 is connected to the reference voltage of reference, and its is defeated
Go out output end of the end as the integrator U5.
Above-mentioned amplitude detecting section U3 operation principle is：The sinusoidal ac signal of trans-impedance amplifier U1 outputs passes through peak
It is worth detector U4 detections, peak detector U4 obtains the voltage for representing trans-impedance amplifier U1 output sinusoidal ac signal amplitudes
Signal and compared with being input to the external amplitude control voltage of the integrator U5 other ends, integrator U5 output termination variable gain
Amplifier U2 gain control input, integrator U5 output voltage control variable gain amplifiers U2 multiplication factor, finally
Encourage driving circuit gain to stablize by feedback control loop in critical level, ensure the fixed ampllitude pure oscillation of quartz crystal.
For more specifically, in the quartz crystal starting of oscillation stage, the sinusoidal signal amplitude that amplitude detection unit U3 is detected is very
It is small, variable gain amplifier U2 multiplication factor is far longer than 1, therefore loop gain is much larger than 1, during so as to shorten starting of oscillation
Between；After quartz crystal starting of oscillation, amplitude detection unit U3 regulation variable gain amplifiers U2 multiplication factor increases whole loop
Benefit is constantly equal to 1, so as to ensure that loop each point is operated in stable sine wave state.
In a preferred embodiment, because circuit provided by the invention has the characteristics of being adapted to single-chip integration, the present embodiment
A kind of circuit structure diagram of variable gain amplifier is provided, such as Fig. 4, the variable gain amplifier U2 include the first PMOSFET
Transistor M1, the second PMOSFET transistor M2, the 3rd PMOSFET transistor M3, the 4th PMOSFET transistor M6, first
NMOSFET transistors M4, the 2nd NMOSFET transistors M5, the 3rd NMOSFET transistors M7 and the 9th resistance R9；Wherein,
PMOSFET transistor M1 source electrode connects the first power supply Vp, gain control input of the grid as variable gain amplifier, drain electrode
Connect PMOSFET transistor M2 and M3 source electrode；Anti-phase input of the PMOSFET transistor M2 grid as variable gain amplifier
End, drain electrode connect NMOSFET transistors M4 grid and drain electrode；PMOSFET transistor M3 grid is as variable gain amplifier
In-phase input end, drain electrode connects NMOSFET transistors M5 drain electrode；NMOSFET transistors M4 is diode-connected, its grid and
Drain electrode is connected, and source electrode meets second source Vn；NMOSFET transistor M5 source electrodes meet second source Vn, and grid connects NMOSFET transistors
M4 grid, drain electrode connect PMOSFET transistor M6 grid and NMOSFET transistors M7 grid；PMOSFET transistor M6's
Source electrode meets the first power supply Vp, and drain electrode connects NMOSFET transistors M7 drain electrode；NMOSFET transistors M7 source electrode connects second source
Vn, the output end to drain as variable gain amplifier；Resistance R9 and grid and the drain electrode for being connected in NMOSFET transistors M7
Between.
In variable gain amplifier first order operational amplifier tail current be flow through PMOSFET transistor M1 electric current it is as follows
Shown in formula (1)：
Wherein, μpFor carrier mobility, COXFor the gate oxide capacitance of unit area, Vp is the first supply voltage, VC
For gain control input voltage, VthpFor the threshold voltage of M1 pipes, W is the grid width of M1 pipes, and L is that the grid of M1 pipes are grown.
Transistor M2, M3, M4, M5 form operational transconductance amplifier (OTA), and the transadmittance gain of the operational transconductance amplifier is such as
Lower formula (2)：
Wherein, transistor M6, M7, R9 forms second level trans-impedance amplifier, and the amplifier transimpedance gain is approximately R9, therefore
Variable gain amplifier overall magnification equation below (3)：
Av-gm8^R9 (3)
Wherein, with reference to formula (2) (3), it can be deduced that the multiplication factor of variable gain amplifierTherefore gain-controlled voltage VC can linearly control the times magnification of variable gain amplifier
Number, makes whole backfeed loop be more prone to control.
In another preferred embodiment, such as Fig. 5, a kind of preferred electrical architecture figure of above-mentioned peak detector is given, such as
Shown in figure, the peak detector U4 include the first tail current source I1, the second tail current source I2, the 5th PMOSFET transistor M8,
6th PMOSFET transistor M9, the 4th NMOSFET transistors M10, the 5th NMOSFET transistors M11, the 6th NMOSFET crystal
Pipe M12 and the 3rd electric capacity C3；Wherein, input of the PMOSFET transistor M8 grid as peak detector, source electrode connect tail
Current source I1 one end, drain electrode connect NMOSFET transistors M10 drain electrode；Tail current source I1 mono- terminates the first power supply Vp, the other end
Connect PMOSFET transistor M8, M9 source electrode；NMOSFET transistors M10 grid connects NMOSFET transistors M11 grid, source
Pole meets second source Vn, and drain electrode connects NMOSFET transistors M12 grid；PMOSFET transistor M9 source electrode connects PMOSFET crystalline substances
Body pipe M8 source electrode, grid connect tail current source I2 one end, and drain electrode connects NMOSFET transistors M11 drain electrode；NMOSFET crystal
Pipe M11 is diode-connected, and its grid is connected with drain electrode, and source electrode meets second source Vn；Tail current source I2 mono- terminates the first power supply
Vp, another termination PMOSFET transistor M9 grid；NMOSFET transistors M12 source electrode meets second source Vn, and drain electrode connects
PMOSFET transistor M9 grid and as the output end of peak detection circuit；Electric capacity C3 mono- terminates second source Vn, the other end
Connect NMOSFET transistors M12 drain electrode.
In another preferred embodiment, such as Fig. 6, the equivalent-circuit model of quartz crystal G1 in foregoing circuit is given,
Branch route dynamic electric resistor R0, dynamic capacity C0 and the dynamic inductance L0 of the equivalent-circuit model are composed in series, and are referred to as
Series arm.The dynamic electric resistor R0 main representatives size of quartz crystal mechanical loss, and dynamic capacity C0 and dynamic inductance L0
Mainly determined by the size of quartz crystal, density, piezoelectric constant and elastic constant.Electrostatic capacitance between quarts crystal electrode is equivalent
For Cb, it is in parallel in equivalent-circuit model with series arm.
In summary, in the quartz crystal oscillation drive circuit of sine-wave excitation provided by the invention, trans-impedance amplifier
The piezoelectricity sensor current signal of detection quartz crystal one end is simultaneously converted to voltage signal, then the signal is passed through into amplitude detection unit
To control the gain of variable gain amplifier, finally make loop works in fixed ampllitude pure oscillation state, in conjunction with providing variable increasing
Beneficial amplifier and peak detection circuit structure, integrated circuit of the invention have simple in construction, small volume, low in energy consumption and suitable
The single chip integrated advantage of standard CMOS process.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. the quartz crystal oscillation drive circuit of a kind of sine-wave excitation, it is characterised in that amplify including quartz crystal G1, across resistance
Device U1, variable gain amplifier U2, amplitude detection unit U3, the input of the trans-impedance amplifier U1 and the quartz crystal G1
First end be connected, the output end of the trans-impedance amplifier U1 is connected with amplitude detection unit U3 input, it is described across
Impedance amplifier U1 output end is connected with the first input end of the variable gain amplifier U2, and passes sequentially through anti-phase amplification
Device U7 and attenuation network U6 is connected with the second input of the variable gain amplifier U2, the amplitude detection unit U3's
Output end is connected with the gain control input of the variable gain amplifier U2, the output of the variable gain amplifier U2
End is connected with the second end of the quartz crystal G1.
2. the quartz crystal oscillation drive circuit of sine-wave excitation according to claim 1, it is characterised in that：It is described variable
Gain amplifier U2 include the first PMOSFET transistor M1, the second PMOSFET transistor M2, the 3rd PMOSFET transistor M3,
4th PMOSFET transistor M6, the first NMOSFET transistors M4, the 2nd NMOSFET transistors M5, the 3rd NMOSFET transistors
M7 and the 9th resistance R9；Wherein described first PMOSFET transistor M1 source electrode connects the first power supply, and grid is as described variable
Gain amplifier U2 gain control input, drain electrode connect the source electrode and the described 3rd of the second PMOSFET transistor M2
PMOSFET transistor M3 source electrode；The grid of the second PMOSFET transistor M2 is as the variable gain amplifier U2's
Inverting input, drain electrode connect grid and the drain electrode of the first NMOSFET transistors M4；The 3rd PMOSFET transistor M3
In-phase input end of the grid as the variable gain amplifier U2, drain electrode connects the leakage of the 2nd NMOSFET transistors M5
Pole；The first NMOSFET transistors M4 is diode-connected, and its grid is connected with drain electrode, and source electrode connects second source；Described
Two NMOSFET transistor M5 source electrodes connect second source, and grid connects the grid of the first NMOSFET transistors M4, and drain electrode meets institute
State the 4th PMOSFET transistor M6 grid and the grid of the 3rd NMOSFET transistors M7；4th PMOSFET
Transistor M6 source electrode connects the first power supply, and drain electrode connects the drain electrode of the 3rd NMOSFET transistors M7；3rd NMOSFET
Transistor M7 source electrode connects second source, the output end to drain as the variable gain amplifier U2；The 9th resistance R9
And it is connected between grid and the drain electrode of the 3rd NMOSFET transistors M7.
3. the quartz crystal oscillation drive circuit of sine-wave excitation according to claim 1, it is characterised in that：The peak value
Detector U4 includes the first tail current source I1, the second tail current source I2, the 5th PMOSFET transistor M8, the 6th PMOSFET crystal
Pipe M9, the 4th NMOSFET transistors M10, the 5th NMOSFET transistors M11, the electricity of the 6th NMOSFET transistors M12 and the 3rd
Hold C3；Input of the wherein described 5th PMOSFET transistor M8 grid as the peak detector U4, source electrode connect described
First tail current source I1 one end, drain electrode connect the drain electrode of the 4th NMOSFET transistors M10；The first tail current source I1
One the first power supply of termination, another termination the 5th PMOSFET transistor M8 source electrode and the 6th PMOSFET transistor M9
Source electrode；The grid of the 4th NMOSFET transistors M10 connects the grid of the 5th NMOSFET transistors M11, and source electrode connects
Second source, drain electrode connect the grid of the 6th NMOSFET transistors M12；The source electrode of the 6th PMOSFET transistor M9 connects
The source electrode of the 5th PMOSFET transistor M8, grid connect one end of the second tail current source I2, and drain electrode connects the described 5th
NMOSFET transistors M11 drain electrode；The 5th NMOSFET transistors M11 is diode-connected, and its grid is connected with drain electrode,
Source electrode connects second source；The second tail current source I2 mono- terminates the first power supply, another termination the 6th PMOSFET transistor
M9 grid；The source electrode of the 6th NMOSFET transistors M12 connects second source, and drain electrode connects the 6th PMOSFET transistor
M9 grid and as the output end of the peak detection circuit U4；The 3rd electric capacity C3 mono- terminates second source, the other end
Connect the drain electrode of the 6th NMOSFET transistors M12.
4. according to the quartz crystal oscillation drive circuit of any described sine-wave excitations of claim 1-3, it is characterised in that：Across
Impedance amplifier U1 includes the first operational amplifier A 1, first resistor R1 and the first electric capacity C1, wherein first resistor R1 and first
Electric capacity C1 is connected in parallel between inverting input and the output end of the first operational amplifier A 1；The same phase of first operational amplifier A 1
Input end grounding, the inverting input of the first operational amplifier A 1 are connected with quartz crystal G1 first end；First operation amplifier
Input of the device A1 inverting input as trans-impedance amplifier U1, the output end of the first operational amplifier A 1 is used as amplifies across resistance
Device U1 output end.Trans-impedance amplifier U1 effect is for amplifying and turning the current signal at the quartz crystal detected G1 ends
It is changed to voltage signal.
5. the quartz crystal oscillation drive circuit of sine-wave excitation according to claim 4, it is characterised in that：It is described anti-phase
Amplifier U7 includes the second operational amplifier A 2, second resistance R2 and 3rd resistor R3, wherein the 3rd resistor R3 is in parallel
It is connected between inverting input and the output end of second operational amplifier A 2, described in one end conduct of the second resistance R2
Inverting amplifier U7 input is connected to the output end of the trans-impedance amplifier U1, and the other end is connected to second computing and put
Big device A2 inverting input；The in-phase input end ground connection of second operational amplifier A 2, its output end is as described anti-phase
Amplifier U7 output end.
6. the quartz crystal oscillation drive circuit of sine-wave excitation according to claim 5, it is characterised in that：The decay
Network U6 includes the 4th resistance R4, the 5th resistance R5 and the 6th resistance R6, wherein the both ends of the 5th resistance R5 are made respectively
For first, second output end of the attenuation network U6, the in-phase input end of the variable gain amplifier U2 is connected in parallel
Between inverting input；One end of the 4th resistance R4 is connected to described anti-as the first input end of the attenuation network U6
Phase amplifier U7 output end, other end attenuation network U6 first output end as shown in are connected to the variable gain amplification
Device U2 in-phase input end；One end of the 6th resistance R6 is connected to described as the second input of the attenuation network U6
Trans-impedance amplifier U1 output end, the other end are connected to the variable gain as the second output end of the attenuation network U6 and put
Big device U2 inverting input.
7. the quartz crystal oscillation drive circuit of sine-wave excitation according to claim 6, it is characterised in that：The amplitude
Detection unit U3 includes peak detector U4 and integrator U5, the peak detector U4 input with trans-impedance amplifier U1's
Output end is connected, and exchange letter can be represented for receiving the AC signal of shown trans-impedance amplifier U1 outputs and being translated into
The d. c. voltage signal of number amplitude；An input of the integrator U5 is connected with the output end of the peak detector U4,
For the d. c. voltage signal for exporting the peak detector U4 and the reference for being input to another inputs of integrator U5
Reference voltage carries out integral contrast；The output end of the integrator U5 and the gain control input of the variable gain amplifier U2
End connection, to control the multiplication factor of the variable gain amplifier U2.
8. the quartz crystal oscillation drive circuit of sine-wave excitation according to claim 7, it is characterised in that：Above-mentioned integration
Device U5, which obtains particular circuit configurations, to be included：3rd operational amplifier A 3, the 7th resistance R7, the 8th resistance R8 and the second electric capacity
C2；Wherein described 7th resistance R7 one end is connected to the defeated of the peak detector U4 as the input of the integrator U5
Go out end, the other end is connected to the inverting input of the 3rd operational amplifier A 3；The 8th resistance R8 and the described second electricity
Hold C2 first to connect, be then connected in parallel to again between inverting input and the output end of the 3rd operational amplifier A 3, i.e., it is described
8th resistance R8 one end is connected to the inverting input of the 3rd operational amplifier A 3, and its other end is connected to described second
Electric capacity C2 one end, the other end of the second electric capacity C2 are connected to the output end of the 3rd operational amplifier A 3；Described
The in-phase input end of three operational amplifier As 3 is connected to the reference voltage of reference, output of its output end as the integrator U5
End.
A kind of 9. monolithic integrated optical circuit, it is characterised in that：Vibrate and drive including any described quartz crystals of the claims 1-8
Dynamic circuit.
10. monolithic integrated optical circuit according to claim 9, it is characterised in that：The monolithic integrated optical circuit is standard CMOS
Technique monolithic integrated optical circuit.
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| CN201710657230.9A CN107421524B (en) | 2017-08-03 | 2017-08-03 | Quartz crystal oscillation drive circuit and monolithic integrated circuit thereof |
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| CN201710657230.9A CN107421524B (en) | 2017-08-03 | 2017-08-03 | Quartz crystal oscillation drive circuit and monolithic integrated circuit thereof |
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| CN110988397A (en) * | 2019-12-19 | 2020-04-10 | 西安建筑科技大学 | Excitation circuit for quartz resonance accelerometer |
| CN111162750A (en) * | 2019-10-31 | 2020-05-15 | 奉加微电子（上海）有限公司 | Crystal oscillation circuit, method and electronic equipment |
| CN114152541A (en) * | 2020-09-07 | 2022-03-08 | 中石化石油工程技术服务有限公司 | Tuning fork type self-oscillation sensor system |
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| CN101615886A (en) * | 2009-07-22 | 2009-12-30 | 成都国腾电子技术股份有限公司 | A kind of main circuit of quartz crystal oscillator |
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|---|---|
| CN107421524B (en) | 2020-02-07 |
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