CN107421524B - Quartz crystal oscillation drive circuit and monolithic integrated circuit thereof - Google Patents

Quartz crystal oscillation drive circuit and monolithic integrated circuit thereof Download PDF

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CN107421524B
CN107421524B CN201710657230.9A CN201710657230A CN107421524B CN 107421524 B CN107421524 B CN 107421524B CN 201710657230 A CN201710657230 A CN 201710657230A CN 107421524 B CN107421524 B CN 107421524B
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transistor
amplifier
nmosfet
pmosfet
resistor
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CN107421524A (en
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黄文刚
曾岩
黄晓宗
刘伦才
崔华锐
谢佳维
朱振忠
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CETC 24 Research Institute
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/38—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator frequency-determining element being connected via bridge circuit to closed ring around which signal is transmitted
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L5/00—Automatic control of voltage, current, or power

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Oscillators With Electromechanical Resonators (AREA)

Abstract

The invention relates to a quartz crystal oscillation driving circuit and a monolithic integrated circuit thereof, wherein the quartz crystal oscillation driving circuit is composed of a quartz crystal, a trans-impedance amplifier, a variable gain amplifier and an amplitude detection unit. In the invention, a trans-impedance amplifier detects a piezoelectric induced current signal at one end of a quartz crystal and converts the piezoelectric induced current signal into a voltage signal, and then the signal controls the gain of a variable gain amplifier through an amplitude detection unit, so that a loop works in a stable-amplitude sinusoidal oscillation state finally; in addition, the quartz crystal oscillation driving circuit can be suitable for monolithic integration, and the invention has the advantages that the whole circuit has the advantages of simple structure, small volume, low power consumption and suitability for standard CMOS process monolithic integration.

Description

Quartz crystal oscillation drive circuit and monolithic integrated circuit thereof
Technical Field
The invention relates to the field of inertial sensing, in particular to a quartz tuning fork gyroscope driving circuit, and particularly relates to a quartz crystal oscillation driving circuit and a monolithic integrated circuit thereof.
Background
The quartz gyroscope is an angular velocity sensor with medium precision, has the advantages of small volume, low power consumption and the like, and generally adopts a self-oscillation mode to realize excitation driving.
The traditional excitation driving circuit generally adopts square wave excitation, and has the advantages of simple circuit structure and the disadvantages of more harmonic components, large interference and poor stability of excitation frequency. The ideal excitation driving mode is sinusoidal excitation, the circuit provides critical gain, the crystal is just in a sinusoidal oscillation state, the frequency stability is optimal, and the interference to other circuits is also minimum.
Compared with the quartz crystal used by a common clock circuit, the quartz gyroscope crystal has a lower quality factor and cannot realize oscillation by adopting a common single-stage amplifier. CN102624335A and CN1909360A propose a simpler crystal oscillation circuit, but the oscillation amplitude and dc level are mainly maintained by a single MOS transistor, and the problem of difficult oscillation may occur for the quartz gyroscope with a low Q value.
As shown in fig. 1, a pre-stage transimpedance amplifier U1 pre-amplifies a piezoelectric signal output from a first end of a quartz crystal, and the piezoelectric signal is further amplified by a variable gain amplifier U2 and then fed back to a second end of the crystal. The oscillation state of the crystal is determined by the gain of the loop signal, if the loop gain is low, the oscillation amplitude is smaller and smaller, and finally the crystal cannot oscillate; if the loop gain is higher, the oscillation amplitude is larger and larger, and finally the loop enters an amplitude limiting state, so that the sine wave oscillation cannot be realized. The amplitude detection circuit U3 is used for detecting the amplitude of the loop signal, and the gain of the variable gain amplifier is controlled according to the detection result, so that the Automatic Gain Control (AGC) of the loop is realized, the gain of the loop can be controlled to be stabilized in a critical state, and the sinusoidal oscillation is realized.
Patents US5047734A, US5185585A, and US5487015A propose sine wave crystal oscillation driving circuits, but have the disadvantages of complex circuit structure, large volume, high power consumption, high hardware requirement, and the like. CN103684262B proposes a sine-wave quartz crystal oscillator circuit structure based on an analog circuit, which has the advantages of simple circuit structure, low power consumption, small size, etc., but its variable gain amplifier is implemented by using a controlled current source implemented by an N-channel junction field effect transistor and a general operational amplifier, and its amplitude detection circuit is implemented by using a precision rectification current structure implemented by a diode and a general operational amplifier, and the circuit structure is still relatively complex and is not easy to implement by using a standard CMOS process monolithic. The invention provides a quartz gyroscope crystal oscillation driving circuit framework for realizing sine wave excitation driving, and particularly provides a detailed variable gain amplifier and peak detection circuit structure.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides a quartz crystal oscillation driving circuit and a monolithic integrated circuit thereof, which are used for solving the problems that the circuit structure of the quartz crystal oscillation driving circuit in the prior art is relatively complex and is not convenient to be implemented monolithically by adopting the standard CMOS process.
In order to achieve the above objects and other related objects, the present invention provides the following technical solutions:
a sine wave excited quartz crystal oscillation driving circuit comprises a quartz crystal G1, a transimpedance amplifier U1, a variable gain amplifier U2 and an amplitude detection unit U3, wherein the input end of the transimpedance amplifier U1 is connected with the first end of the quartz crystal G1, the output end of the transimpedance amplifier U1 is connected with the input end of an amplitude detection unit U3, the output end of the transimpedance amplifier U1 is connected with the first input end of a variable gain amplifier U2, the transimpedance amplifier U1, an inverting amplifier U7 and an attenuation network U6 are sequentially connected, an attenuation network U6 is connected with the second input end of the variable gain amplifier U2, the output end of the amplitude detection unit U3 is connected with the gain control input end of the variable gain amplifier U2, and the output end of the variable gain amplifier U2 is connected with the second end of the quartz crystal G1.
The working principle of the circuit is as follows: the transimpedance amplifier U1 receives the piezoelectric induced current at the first end of the quartz crystal G1 and converts the piezoelectric induced current into an alternating current voltage signal, the amplitude detection unit U3 converts the alternating current voltage signal into a direct current signal capable of reflecting the amplitude of the alternating current voltage signal, the direct current signal is subjected to integral comparison with a reference voltage, and the output signal controls the gain of the variable gain amplifier U2; the output end of the variable gain amplifier U2 drives the second end of the quartz crystal G1 to form a whole feedback loop, and after the loop is stabilized, the circuit works in a stable amplitude sinusoidal oscillation state.
The variable gain amplifier U2 comprises a first PMOSFET transistor M1, a second PMOSFET transistor M2, a third PMOSFET transistor M3, a fourth PMOSFET transistor M6, a first NMOSFET transistor M4, a second NMOSFET transistor M5, a third NMOSFET transistor M7 and a ninth resistor R9; wherein the source of the first PMOSFET transistor M1 is connected to a first power supply, the gate is used as the gain control input terminal of the variable gain amplifier U2, and the drain is connected to the source of the second PMOSFET transistor M2 and the source of the third PMOSFET transistor M3; the grid electrode of the second PMOSFET transistor M2 is used as the inverting input end of the variable gain amplifier U2, and the drain electrode of the second PMOSFET transistor M2 is connected with the grid electrode and the drain electrode of the first NMOSFET transistor M4; the grid electrode of the third PMOSFET transistor M3 is used as the non-inverting input end of the variable gain amplifier U2, and the drain electrode of the third PMOSFET transistor M3 is connected with the drain electrode of the second NMOSFET transistor M5; the first NMOSFET transistor M4 adopts a diode connection method, the grid electrode and the drain electrode of the first NMOSFET transistor M4 are connected, and the source electrode of the first NMOSFET transistor M4 is connected with a second power supply; the source electrode of the second NMOSFET transistor M5 is connected with a second power supply, the grid electrode of the second NMOSFET transistor M3578 is connected with the grid electrode of the first NMOSFET transistor M4, and the drain electrode of the second NMOSFET transistor M5 is connected with the grid electrode of the fourth PMOSFET transistor M6 and the grid electrode of the third NMOSFET transistor M7; the source electrode of the fourth PMOSFET transistor M6 is connected with a first power supply, and the drain electrode of the fourth PMOSFET transistor M3578 is connected with the drain electrode of the third NMOSFET transistor M7; the source electrode of the third NMOSFET transistor M7 is connected with a second power supply, and the drain electrode of the third NMOSFET transistor M7 is used as the output end of the variable gain amplifier U2; the ninth resistor R9 is connected in parallel between the gate and the drain of the third NMOSFET transistor M7.
Preferably, the peak detector U4 includes a first tail current source I1, a second tail current source I2, a fifth PMOSFET transistor M8, a sixth PMOSFET transistor M9, a fourth NMOSFET transistor M10, a fifth NMOSFET transistor M11, a sixth NMOSFET transistor M12, and a third capacitance C3; the grid electrode of the fifth PMOSFET transistor M8 is used as the input end of the peak detector U4, the source electrode is connected with one end of the first tail current source I1, and the drain electrode is connected with the drain electrode of the fourth NMOSFET transistor M10; one end of the first tail current source I1 is connected with a first power supply, and the other end is connected with the source electrode of the fifth PMOSFET transistor M8 and the source electrode of the sixth PMOSFET transistor M9; the grid electrode of the fourth NMOSFET transistor M10 is connected with the grid electrode of the fifth NMOSFET transistor M11, the source electrode of the fourth NMOSFET transistor M10 is connected with a second power supply, and the drain electrode of the fourth NMOSFET transistor M12 is connected with the grid electrode of the sixth NMOSFET transistor M11; the source electrode of the sixth PMOSFET transistor M9 is connected with the source electrode of the fifth PMOSFET transistor M8, the grid electrode of the sixth PMOSFET transistor M9 is connected with one end of the second tail current source I2, and the drain electrode of the sixth PMOSFET transistor M11 is connected with the drain electrode of the fifth NMOSFET transistor M11; the fifth NMOSFET transistor M11 adopts a diode connection method, the grid electrode and the drain electrode of the fifth NMOSFET transistor M11 are connected, and the source electrode of the fifth NMOSFET transistor M11 is connected with a second power supply; one end of the second tail current source I2 is connected with a first power supply, and the other end is connected with the grid electrode of the sixth PMOSFET transistor M9; the source electrode of the sixth NMOSFET transistor M12 is connected with a second power supply, and the drain electrode of the sixth NMOSFET transistor M9 is connected with the grid electrode of the sixth PMOSFET transistor M3526 and serves as the output end of the peak detection circuit U4; and one end of the third capacitor C3 is connected with a second power supply, and the other end is connected with the drain electrode of the sixth NMOSFET transistor M12.
The circuit has the advantages that: the variable gain amplifier U2 structure provided can meet the requirement of quartz crystal G1 sine oscillation excitation drive, and meanwhile, the volume power consumption is small, the precision is high, the device is suitable for monolithic integration, and the device is suitable for single power supply application. Therefore, the quartz crystal G1 oscillation driving circuit realized according to the embodiment has the advantages of small size, low power consumption and high precision, and the sine wave excitation is adopted to avoid the interference influence of square wave higher harmonics on the circuit.
Drawings
Fig. 1 is a circuit diagram of an application background of the present invention.
Fig. 2 is a schematic diagram of a sine wave excited quartz crystal oscillation driving circuit of the present invention.
Fig. 3 is a circuit configuration diagram of a sine wave excited crystal oscillation driving circuit according to an embodiment of the present invention.
Fig. 4 is a circuit configuration diagram of the variable gain amplifier in a preferred embodiment of the present invention.
Fig. 5 is a circuit configuration diagram of the peak detector in a preferred embodiment of the present invention.
FIG. 6 is a schematic diagram of an equivalent circuit model of a quartz crystal according to the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
See FIG. 2: a schematic diagram of a sine wave excited quartz crystal oscillation drive circuit is provided, as shown, the quartz crystal oscillation driving circuit comprises a quartz crystal G1, a trans-impedance amplifier U1, a variable gain amplifier U2 and an amplitude detection unit U3, the input end of the transimpedance amplifier U1 is connected with the first end of the quartz crystal G1, the output end of the transimpedance amplifier U1 is connected with the input end of the amplitude detection unit U3, the output end of the transimpedance amplifier U1 is connected with the first input end of the variable gain amplifier U2, the transimpedance amplifier U1, the inverting amplifier U7 and the attenuation network U6 are sequentially connected, the attenuation network U6 is connected with the second input end of the variable gain amplifier U2, the output of the amplitude detection unit U3 is connected to the gain control input of the variable gain amplifier U2, the output of the variable gain amplifier U2 is connected to the second terminal of the quartz crystal G1.
The working principle of the circuit is as follows: the transimpedance amplifier U1 receives the piezoelectric induced current at the first end of the quartz crystal G1 and converts the piezoelectric induced current into an alternating current voltage signal, the amplitude detection unit U3 converts the alternating current voltage signal into a direct current signal capable of reflecting the amplitude of the alternating current voltage signal, the direct current signal is subjected to integral comparison with a reference voltage, and the output signal controls the gain of the variable gain amplifier U2; the output end of the variable gain amplifier U2 drives the second end of the quartz crystal G1 to form a whole feedback loop, and after the loop is stabilized, the circuit works in a stable amplitude sinusoidal oscillation state.
The circuit has the advantages that: the variable gain amplifier U2 structure provided can meet the requirement of quartz crystal G1 sine oscillation excitation drive, and meanwhile, the volume power consumption is small, the precision is high, the device is suitable for monolithic integration, and the device is suitable for single power supply application. Therefore, the quartz crystal G1 oscillation driving circuit realized according to the embodiment has the advantages of small size, low power consumption and high precision, and the sine wave excitation is adopted to avoid the interference influence of square wave higher harmonics on the circuit.
As a preferred embodiment, fig. 3 is a circuit structure diagram of the sine wave excited crystal oscillation driving circuit in practical application, and the structure and principle of the circuit are explained in detail below to facilitate better understanding and implementation for those skilled in the art.
In a specific implementation, the transimpedance amplifier U1 includes a first operational amplifier a1, a first resistor R1, and a first capacitor C1, wherein the first resistor R1 and the first capacitor C1 are connected in parallel between the inverting input terminal and the output terminal of the first operational amplifier a 1; the non-inverting input end of the first operational amplifier A1 is grounded, and the inverting input end of the first operational amplifier A1 is connected with the first end of the quartz crystal G1; the inverting input of the first operational amplifier a1 serves as the input of the transimpedance amplifier U1, and the output of the first operational amplifier a1 serves as the output of the transimpedance amplifier U1. The transimpedance amplifier U1 is used to amplify and convert the detected current signal at the end of the quartz crystal G1 into a voltage signal.
Further, the inverting amplifier U7 includes a second operational amplifier a2, a second resistor R2 and a third resistor R3, wherein the third resistor R3 is connected in parallel between the inverting input terminal and the output terminal of the second operational amplifier a2, one end of the second resistor R2 is connected to the output terminal of the transimpedance amplifier U1 as the input terminal of the inverting amplifier U7, and the other end is connected to the inverting input terminal of the second operational amplifier a 2; the non-inverting input of the second operational amplifier A2 is connected to ground, and the output thereof is used as the output of the inverting amplifier U7.
Furthermore, the attenuation network U6 includes a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6, wherein two ends of the fifth resistor R5 are respectively used as the first and second output ends of the attenuation network U6, and are connected in parallel between the non-inverting input end and the inverting input end of the variable gain amplifier U2; one end of the fourth resistor R4 is connected to the output end of the inverting amplifier U7 as the first input end of the attenuation network U6, and the other end is connected to the non-inverting input end of the variable gain amplifier U2 as the first output end of the attenuation network U6; one end of the sixth resistor R6 is connected to the output end of the transimpedance amplifier U1 as the second input end of the attenuation network U6, and the other end is connected to the inverting input end of the variable gain amplifier U2 as the second output end of the attenuation network U6.
In a specific implementation, the amplitude detection unit U3 includes a peak detector U4 and an integrator U5, an input terminal of the peak detector U4 is connected to an output terminal of a transimpedance amplifier U1, and is configured to receive the ac signal output by the transimpedance amplifier U1 and convert the ac signal into a dc voltage signal that can represent the amplitude of the ac signal; an input terminal of the integrator U5 is connected to an output terminal of the peak detector U4, for performing an integral comparison between the dc voltage signal output from the peak detector U4 and a reference voltage input to another input terminal of the integrator U5; the output of the integrator U5 is connected to the gain control input of the variable gain amplifier U2 to control the amplification of the variable gain amplifier U2.
Specifically, the specific circuit structure of the integrator U5 includes: a third operational amplifier A3, a seventh resistor R7, an eighth resistor R8 and a second capacitor C2; wherein one end of the seventh resistor R7 is connected as the input end of the integrator U5 to the output end of the peak detector U4, and the other end is connected to the inverting input end of the third operational amplifier A3; the eighth resistor R8 and the second capacitor C2 are connected in series, and then connected in parallel between the inverting input terminal and the output terminal of the third operational amplifier A3, that is, one end of the eighth resistor R8 is connected to the inverting input terminal of the third operational amplifier A3, the other end thereof is connected to one end of the second capacitor C2, and the other end of the second capacitor C2 is connected to the output terminal of the third operational amplifier A3; the non-inverting input terminal of the third operational amplifier A3 is connected to a reference voltage, and the output terminal thereof is used as the output terminal of the integrator U5.
The operation principle of the amplitude detection section U3 described above is: the sinusoidal alternating current signal output by the transimpedance amplifier U1 is detected by a peak detector U4, the peak detector U4 obtains a voltage signal representing the amplitude of the sinusoidal alternating current signal output by the transimpedance amplifier U1 and compares the voltage signal with an external amplitude control voltage input to the other end of the integrator U5, the output end of the integrator U5 is connected with the gain control input end of the variable gain amplifier U2, the output voltage of the integrator U5 controls the amplification factor of the variable gain amplifier U2, and finally the gain of the excitation driving loop is stabilized at a critical level through a feedback control loop, so that the amplitude-stabilized sinusoidal oscillation of the quartz crystal is ensured.
More specifically, in the oscillation starting stage of the quartz crystal, the amplitude of the sinusoidal signal detected by the amplitude detection unit U3 is small, so that the amplification factor of the variable gain amplifier U2 is much greater than 1, and therefore the loop gain is much greater than 1, thereby shortening the oscillation starting time; after the quartz crystal starts oscillation, the amplitude detection unit U3 adjusts the amplification factor of the variable gain amplifier U2 to make the gain of the whole loop constantly equal to 1, thereby ensuring that each point of the loop works in a stable sine wave state.
In a preferred embodiment, since the circuit provided by the present invention has the characteristic of being suitable for monolithic integration, this embodiment presents a circuit structure diagram of a variable gain amplifier, as shown in fig. 4, the variable gain amplifier U2 includes a first PMOSFET transistor M1, a second PMOSFET transistor M2, a third PMOSFET transistor M3, a fourth PMOSFET transistor M6, a first NMOSFET transistor M4, a second NMOSFET transistor M5, a third NMOSFET transistor M7, and a ninth resistor R9; wherein, the source of the PMOSFET transistor M1 is connected with a first power supply Vp, the grid is used as the gain control input end of the variable gain amplifier, and the drain is connected with the sources of the PMOSFET transistors M2 and M3; the grid electrode of the PMOSFET transistor M2 is used as the inverting input end of the variable gain amplifier, and the drain electrode is connected with the grid electrode and the drain electrode of the NMOSFET transistor M4; the grid electrode of the PMOSFET transistor M3 is used as the non-inverting input end of the variable gain amplifier, and the drain electrode is connected with the drain electrode of the NMOSFET transistor M5; the NMOSFET transistor M4 adopts a diode connection method, the grid electrode of the NMOSFET transistor M4 is connected with the drain electrode of the NMOSFET transistor M, and the source electrode of the NMOSFET transistor M4 is connected with the second power supply Vn; the source electrode of the NMOSFET transistor M5 is connected with a second power supply Vn, the gate electrode of the NMOSFET transistor M4 is connected with the gate electrode of the NMOSFET transistor M7, and the drain electrode of the NMOSFET transistor M6 is connected with the gate electrode of the NMOSFET transistor M7; the source electrode of the PMOSFET transistor M6 is connected with a first power supply Vp, and the drain electrode is connected with the drain electrode of the NMOSFET transistor M7; the source electrode of the NMOSFET transistor M7 is connected with a second power supply Vn, and the drain electrode is used as the output end of the variable gain amplifier; resistor R9 is connected in parallel between the gate and drain of NMOSFET transistor M7.
The tail current of the first stage operational amplifier in the variable gain amplifier, i.e., the current flowing through the PMOSFET transistor M1, is shown in the following equation (1):
Figure GDA0002267558250000061
wherein, mupFor carrier mobility, COXIs gate oxide capacitance per unit area, Vp is first power supply voltage, VCFor gain control of input voltage, VthpThe threshold voltage of the M1 tube is W, the gate width of the M1 tube is W, and the gate length of the M1 tube is L.
The transistors M2, M3, M4, M5 constitute a transconductance operational amplifier (OTA) whose transconductance gain is as follows:
Figure GDA0002267558250000062
wherein, the transistors M6, M7 and R9 form a second-stage transimpedance amplifier, and the transimpedance gain of the amplifier is approximately R9, so that the overall amplification factor of the variable gain amplifier is as follows formula (3):
Av＝gm3*R9(3)
wherein, combining the formulas (2) and (3), the amplification factor of the variable gain amplifier can be obtained
Figure GDA0002267558250000063
Therefore, the gain control voltage VC can linearly control the amplification factor of the variable gain amplifier, so that the whole feedback loop is easier to control.
In another preferred embodiment, as shown in fig. 5, a preferred circuit structure diagram of the peak detector is shown, and as shown in the figure, the peak detector U4 includes a first tail current source I1, a second tail current source I2, a fifth PMOSFET transistor M8, a sixth PMOSFET transistor M9, a fourth NMOSFET transistor M10, a fifth NMOSFET transistor M11, a sixth NMOSFET transistor M12, and a third capacitor C3; wherein, the grid of the PMOSFET transistor M8 is used as the input end of the peak detector, the source is connected with one end of the tail current source I1, and the drain is connected with the drain of the NMOSFET transistor M10; one end of the tail current source I1 is connected with a first power supply Vp, and the other end is connected with the sources of the PMOSFET transistors M8 and M9; the gate of the NMOSFET transistor M10 is connected with the gate of the NMOSFET transistor M11, the source is connected with the second power supply Vn, and the drain is connected with the gate of the NMOSFET transistor M12; the source electrode of the PMOSFET transistor M9 is connected with the source electrode of the PMOSFET transistor M8, the grid electrode is connected with one end of the current source I2, and the drain electrode is connected with the drain electrode of the NMOSFET transistor M11; the NMOSFET transistor M11 adopts a diode connection method, the grid electrode of the NMOSFET transistor M11 is connected with the drain electrode of the NMOSFET transistor M, and the source electrode of the NMOSFET transistor M11 is connected with the second power supply Vn; one end of the tail current source I2 is connected with a first power supply Vp, and the other end is connected with the grid electrode of the PMOSFET transistor M9; the source electrode of the NMOSFET transistor M12 is connected with a second power supply Vn, and the drain electrode of the NMOSFET transistor M9 is connected with the grid electrode of the PMOSFET transistor M9 and serves as the output end of the peak value detection circuit; the capacitor C3 has one end connected to the second power supply Vn and the other end connected to the drain of the NMOSFET transistor M12.
In another preferred embodiment, as shown in fig. 6, an equivalent circuit model of the quartz crystal G1 in the circuit is also shown, and one branch of the equivalent circuit model is composed of a dynamic resistor R0, a dynamic capacitor C0 and a dynamic inductor L0 in series, which is called a series branch. The dynamic resistor R0 mainly represents the magnitude of the mechanical loss of the quartz crystal, and the dynamic capacitor C0 and the dynamic inductor L0 are mainly determined by the size, density, piezoelectric constant and elastic constant of the quartz crystal. The electrostatic capacitance between the quartz crystal electrodes is equivalent to Cb and is connected with the series branch in parallel in the equivalent circuit model.
In summary, in the sine-wave-excited quartz crystal oscillation driving circuit provided by the present invention, the transimpedance amplifier detects a piezoelectric induced current signal at one end of the quartz crystal and converts the piezoelectric induced current signal into a voltage signal, and the signal controls the gain of the variable gain amplifier through the amplitude detection unit, so that the loop finally operates in a stable-amplitude sine oscillation state, and the variable gain amplifier and the peak detection circuit are combined to provide a structure.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (9)

1. A sine wave excited quartz crystal oscillation drive circuit is characterized by comprising a quartz crystal G1, a transimpedance amplifier U1, a variable gain amplifier U2 and an amplitude detection unit U3, the input end of the transimpedance amplifier U1 is connected with the first end of the quartz crystal G1, the output end of the transimpedance amplifier U1 is connected with the input end of the amplitude detection unit U3, the output end of the transimpedance amplifier U1 is connected with the first input end of the variable gain amplifier U2, the transimpedance amplifier U1, the inverting amplifier U7 and the attenuation network U6 are sequentially connected, the attenuation network U6 is connected with the second input end of the variable gain amplifier U2, the output of the amplitude detection unit U3 is connected to the gain control input of the variable gain amplifier U2, the output end of the variable gain amplifier U2 is connected with the second end of the quartz crystal G1;
the variable gain amplifier U2 comprises a first PMOSFET transistor M1, a second PMOSFET transistor M2, a third PMOSFET transistor M3, a fourth PMOSFET transistor M6, a first NMOSFET transistor M4, a second NMOSFET transistor M5, a third NMOSFET transistor M7 and a ninth resistor R9; wherein the source of the first PMOSFET transistor M1 is connected to a first power supply, the gate is used as the gain control input terminal of the variable gain amplifier U2, and the drain is connected to the source of the second PMOSFET transistor M2 and the source of the third PMOSFET transistor M3; the grid electrode of the second PMOSFET transistor M2 is used as the inverting input end of the variable gain amplifier U2, and the drain electrode of the second PMOSFET transistor M2 is connected with the grid electrode and the drain electrode of the first NMOSFET transistor M4; the grid electrode of the third PMOSFET transistor M3 is used as the non-inverting input end of the variable gain amplifier U2, and the drain electrode of the third PMOSFET transistor M3 is connected with the drain electrode of the second NMOSFET transistor M5; the first NMOSFET transistor M4 adopts a diode connection method, the grid electrode and the drain electrode of the first NMOSFET transistor M4 are connected, and the source electrode of the first NMOSFET transistor M4 is connected with a second power supply; the source electrode of the second NMOSFET transistor M5 is connected with a second power supply, the grid electrode of the second NMOSFET transistor M3578 is connected with the grid electrode of the first NMOSFET transistor M4, and the drain electrode of the second NMOSFET transistor M5 is connected with the grid electrode of the fourth PMOSFET transistor M6 and the grid electrode of the third NMOSFET transistor M7; the source electrode of the fourth PMOSFET transistor M6 is connected with a first power supply, and the drain electrode of the fourth PMOSFET transistor M3578 is connected with the drain electrode of the third NMOSFET transistor M7; the source electrode of the third NMOSFET transistor M7 is connected with a second power supply, and the drain electrode of the third NMOSFET transistor M7 is used as the output end of the variable gain amplifier U2; the ninth resistor R9 is connected in parallel between the gate and the drain of the third NMOSFET transistor M7.
2. The sine wave excited quartz crystal oscillation driver circuit of claim 1, wherein: the amplitude detection unit U3 comprises a peak detector U4, and the peak detector U4 comprises a first tail current source I1, a second tail current source I2, a fifth PMOSFET transistor M8, a sixth PMOSFET transistor M9, a fourth NMOSFET transistor M10, a fifth NMOSFET transistor M11, a sixth NMOSFET transistor M12 and a third capacitor C3; the grid electrode of the fifth PMOSFET transistor M8 is used as the input end of the peak detector U4, the source electrode is connected with one end of the first tail current source I1, and the drain electrode is connected with the drain electrode of the fourth NMOSFET transistor M10; one end of the first tail current source I1 is connected with a first power supply, and the other end is connected with the source electrode of the fifth PMOSFET transistor M8 and the source electrode of the sixth PMOSFET transistor M9; the grid electrode of the fourth NMOSFET transistor M10 is connected with the grid electrode of the fifth NMOSFET transistor M11, the source electrode of the fourth NMOSFET transistor M10 is connected with a second power supply, and the drain electrode of the fourth NMOSFET transistor M12 is connected with the grid electrode of the sixth NMOSFET transistor M11; the source electrode of the sixth PMOSFET transistor M9 is connected with the source electrode of the fifth PMOSFET transistor M8, the grid electrode of the sixth PMOSFET transistor M9 is connected with one end of the second tail current source I2, and the drain electrode of the sixth PMOSFET transistor M11 is connected with the drain electrode of the fifth NMOSFET transistor M11; the fifth NMOSFET transistor M11 adopts a diode connection method, the grid electrode and the drain electrode of the fifth NMOSFET transistor M11 are connected, and the source electrode of the fifth NMOSFET transistor M11 is connected with a second power supply; one end of the second tail current source I2 is connected with a first power supply, and the other end is connected with the grid electrode of the sixth PMOSFET transistor M9; the source electrode of the sixth NMOSFET transistor M12 is connected with a second power supply, and the drain electrode of the sixth NMOSFET transistor M9 is connected with the grid electrode of the sixth PMOSFET transistor M3526 and serves as the output end of the peak detection circuit U4; and one end of the third capacitor C3 is connected with a second power supply, and the other end is connected with the drain electrode of the sixth NMOSFET transistor M12.
3. The sine wave excited quartz crystal oscillation driver circuit of claim 1 or 2, wherein: the transimpedance amplifier U1 comprises a first operational amplifier a1, a first resistor R1 and a first capacitor C1, wherein the first resistor R1 and the first capacitor C1 are connected in parallel between the inverting input terminal and the output terminal of the first operational amplifier a 1; the non-inverting input end of the first operational amplifier A1 is grounded, and the inverting input end of the first operational amplifier A1 is connected with the first end of the quartz crystal G1; the inverting input end of the first operational amplifier A1 is used as the input end of the transimpedance amplifier U1, and the output end of the first operational amplifier A1 is used as the output end of the transimpedance amplifier U1; the transimpedance amplifier U1 is used to amplify and convert the detected current signal at the end of the quartz crystal G1 into a voltage signal.
4. The sine wave excited quartz crystal oscillation driver circuit of claim 3, wherein: the inverting amplifier U7 comprises a second operational amplifier a2, a second resistor R2 and a third resistor R3, wherein the third resistor R3 is connected in parallel between the inverting input terminal and the output terminal of the second operational amplifier a2, one end of the second resistor R2 is connected as the input terminal of the inverting amplifier U7 to the output terminal of the transimpedance amplifier U1, and the other end is connected to the inverting input terminal of the second operational amplifier a 2; the non-inverting input of the second operational amplifier A2 is connected to ground, and the output thereof is used as the output of the inverting amplifier U7.
5. The sine wave excited quartz crystal oscillation driver circuit of claim 4, wherein: the attenuation network U6 comprises a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6, wherein two ends of the fifth resistor R5 are respectively used as a first output end and a second output end of the attenuation network U6 and are connected in parallel between a non-inverting input end and an inverting input end of the variable gain amplifier U2; one end of the fourth resistor R4 is connected to the output end of the inverting amplifier U7 as the first input end of the attenuation network U6, and the other end is connected to the non-inverting input end of the variable gain amplifier U2 as the first output end of the attenuation network U6; one end of the sixth resistor R6 is connected to the output end of the transimpedance amplifier U1 as the second input end of the attenuation network U6, and the other end is connected to the inverting input end of the variable gain amplifier U2 as the second output end of the attenuation network U6.
6. The sine wave excited quartz crystal oscillation driver circuit of claim 5, wherein: the amplitude detection unit U3 includes a peak detector U4 and an integrator U5, an input terminal of the peak detector U4 is connected to an output terminal of a transimpedance amplifier U1, and is configured to receive the ac signal output by the transimpedance amplifier U1 and convert the ac signal into a dc voltage signal that can represent the amplitude of the ac signal; an input terminal of the integrator U5 is connected to an output terminal of the peak detector U4, for performing an integral comparison between the dc voltage signal output from the peak detector U4 and a reference voltage input to another input terminal of the integrator U5; the output of the integrator U5 is connected to the gain control input of the variable gain amplifier U2 to control the amplification of the variable gain amplifier U2.
7. The sine wave excited quartz crystal oscillation driver circuit of claim 6, wherein: the specific circuit structure of the integrator U5 includes: a third operational amplifier A3, a seventh resistor R7, an eighth resistor R8 and a second capacitor C2; wherein one end of the seventh resistor R7 is connected as the input end of the integrator U5 to the output end of the peak detector U4, and the other end is connected to the inverting input end of the third operational amplifier A3; the eighth resistor R8 and the second capacitor C2 are connected in series, and then connected in parallel between the inverting input terminal and the output terminal of the third operational amplifier A3, that is, one end of the eighth resistor R8 is connected to the inverting input terminal of the third operational amplifier A3, the other end thereof is connected to one end of the second capacitor C2, and the other end of the second capacitor C2 is connected to the output terminal of the third operational amplifier A3; the non-inverting input terminal of the third operational amplifier A3 is connected to a reference voltage, and the output terminal thereof is used as the output terminal of the integrator U5.
8. A monolithic integrated circuit, characterized in that: comprising a quartz crystal oscillation drive circuit as claimed in any one of the preceding claims 1 to 7.
9. The monolithic integrated circuit of claim 8, wherein: the monolithic integrated circuit is a standard CMOS process monolithic integrated circuit.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101615886A (en) * 2009-07-22 2009-12-30 成都国腾电子技术股份有限公司 A kind of main circuit of quartz crystal oscillator
CN103684262A (en) * 2013-12-20 2014-03-26 北京遥测技术研究所 Sine-wave quartz crystal oscillator based on analog circuit
JP2015019241A (en) * 2013-07-11 2015-01-29 新日本無線株式会社 Oscillation circuit and method of adjusting the same
CN104426479A (en) * 2013-08-29 2015-03-18 京微雅格（北京）科技有限公司 Low-power consumption, low-jitter, and wide working-range crystal oscillator circuit
CN106059512A (en) * 2016-05-26 2016-10-26 华南理工大学 Novel low-complexity broadband variable gain amplifier

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101615886A (en) * 2009-07-22 2009-12-30 成都国腾电子技术股份有限公司 A kind of main circuit of quartz crystal oscillator
JP2015019241A (en) * 2013-07-11 2015-01-29 新日本無線株式会社 Oscillation circuit and method of adjusting the same
CN104426479A (en) * 2013-08-29 2015-03-18 京微雅格（北京）科技有限公司 Low-power consumption, low-jitter, and wide working-range crystal oscillator circuit
CN103684262A (en) * 2013-12-20 2014-03-26 北京遥测技术研究所 Sine-wave quartz crystal oscillator based on analog circuit
CN106059512A (en) * 2016-05-26 2016-10-26 华南理工大学 Novel low-complexity broadband variable gain amplifier

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