CN107404314A - One key switch circuit and the supply unit with a key switch circuit - Google Patents
One key switch circuit and the supply unit with a key switch circuit Download PDFInfo
- Publication number
- CN107404314A CN107404314A CN201610340445.3A CN201610340445A CN107404314A CN 107404314 A CN107404314 A CN 107404314A CN 201610340445 A CN201610340445 A CN 201610340445A CN 107404314 A CN107404314 A CN 107404314A
- Authority
- CN
- China
- Prior art keywords
- transistor
- key switch
- voltage
- control terminal
- output end
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/96—Touch switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- Electronic Switches (AREA)
Abstract
The present invention provides an a kind of key switch circuit,One key switch circuit includes the first transistor,Second transistor,Third transistor and key switch,The first transistor,Second transistor and second transistor include input,Output end and control terminal,Key switch includes first end and the second end,The input connection voltage input end of the first transistor,The output end connection voltage output end of the first transistor,The control terminal of the first transistor connects voltage input end by first resistor,The control terminal of the input connection the first transistor of second transistor,The output head grounding of second transistor,The first end of the control terminal connection key switch of second transistor,Second end of key switch passes through capacity earth,Second end of key switch also connects the control terminal of the first transistor by second resistance,Voltage output end connects the input of third transistor by 3rd resistor,The control terminal of the output end connection second transistor of transistor simultaneously passes through the 4th resistance eutral grounding.
Description
Technical field
The present invention relates to on-off circuit, more particularly to an a kind of key switch circuit and there is a key switch circuit
Supply unit.
Background technology
With the development of electronic technology, electronic equipment it is small to household electrical appliance, shop equipment, greatly to Aero-Space,
The application fields such as space exploration are more and more extensive, adapt to the switch kind of different application electronic equipment and environment therewith
Class and form are also more and more.At present, mechanical switch and electronic cutting can be generally divided into by realizing the switch of circuit
Close.
Mechanical switch realizes switching function using Mechanical Contact and disconnection, and shut-off voltage x current model can be opened by having
Enclose wide, switchable direct current and exchange, non-standby current after shutdown, the advantages that circuit realiration is simple;But its
Have the shortcomings that to switch that mechanical wear is larger, fragile, to be not easy to automatically control application, volume big, it has not been convenient to
Operation.
The content of the invention
For overcome the deficiencies in the prior art, the present invention provides an a kind of key switch circuit of convenient operation and had
The supply unit of one key switch circuit.
The present invention provides an a kind of key switch circuit, and a key switch circuit includes the first transistor, second
Transistor, third transistor and key switch, the first transistor, the second transistor and described
Two-transistor includes input, output end and control terminal, and the first transistor is the crystalline substance of low level conducting
Body pipe, the second transistor are the transistor of high level conducting, and the key switch includes first end and the
Two ends, the input connection voltage input end of the first transistor, the output end of the first transistor connect
Voltage output end is connect, the control terminal of the first transistor connects the voltage input end by first resistor,
The input of the second transistor connects the control terminal of the first transistor, the second transistor it is defeated
Go out end ground connection, the control terminal of the second transistor connects the first end of the key switch, and the button is opened
By capacity earth, the second end of the key switch also connects described the by second resistance at the second end closed
The control terminal of one transistor, the voltage output end connect the input of the third transistor by 3rd resistor
End, the output end of the third transistor connect the control terminal of the second transistor and connect by the 4th resistance
Ground, the voltage input end be used for receive supply voltage and it is described pressing switch press after output voltage to institute
Voltage output end is stated, the voltage output end is used to connect load circuit, the control terminal of the third transistor
For being received after the voltage input end output voltage gives the voltage output end from the load circuit
Control signal and turn on third transistor.
Further, the control terminal of the third transistor passes through the 5th resistance eutral grounding, the third transistor
For the transistor of high level conducting.
Further, the third transistor is N-type FET, and the control terminal of the third transistor is
The grid of the N-type FET, the input of the third transistor are the leakage of the N-type FET
Pole, the output end of the third transistor are the source electrode of the N-type FET.
Further, the first transistor is p-type FET, and the control terminal of the first transistor is
The grid of the p-type FET, the input of the first transistor are the leakage of the p-type FET
Pole, the output end of the first transistor are the source electrode of the p-type FET.
Further, the second transistor is N-type FET, and the control terminal of the second transistor is
The grid of the N-type FET, the input of the second transistor are the leakage of the N-type FET
Pole, the output end of the second transistor are the source electrode of the N-type FET.
The present invention also provides a kind of supply unit, and the supply unit includes an above-mentioned key switch circuit.
Further, the supply unit also includes power supply, and the power supply connects the voltage input end and is used for
The supply voltage is provided.
Further, the supply unit also includes the load circuit, and the load circuit includes single-chip microcomputer,
The control terminal that the single-chip microcomputer connects the third transistor is used in the voltage input end output voltage to institute
The control signal is exported after stating voltage output end.
Beneficial effects of the present invention:One key switch circuit includes three transistors and by compressing switch, described
After pressing switch press, the control terminal of electric capacity and second transistor connects and it is powered, second transistor
Control terminal is changed into high level, turns on second transistor;Second transistor turns on the control for making the first transistor
End is grounded and is changed into low level, so that the first transistor turns on;The first transistor conducting makes voltage input end
To be connected with voltage output end, third transistor is used to receive to be turned on from the control signal of load circuit, with
The control terminal of second transistor after release button is set to keep high level, so that a whole key switch circuit is in
Conducting state, when needing to turn off a key switch circuit, pressing the key switch can turn off, operation letter
Folk prescription is just.
Brief description of the drawings
Fig. 1 is the circuit connection diagram of a key switch circuit better embodiment of the invention.
Fig. 2 be a key switch circuit better embodiment of supply unit of the present invention press in the off case by
The schematic diagram of key switch moment.
Fig. 3 be supply unit of the present invention a key switch circuit better embodiment in the off case persistently by
Press the schematic diagram of key switch.
Fig. 4 is that a key switch circuit better embodiment of supply unit of the present invention is unclamped button after opening and opened
The schematic diagram of pass.
Fig. 5 is that key switch circuit better embodiment pressing keys after opening of supply unit of the present invention are opened
The schematic diagram of the moment of pass.
Fig. 6 be supply unit of the present invention a key switch circuit better embodiment after shut-off Continued depression by
The schematic diagram of key switch.
Embodiment
Below, various embodiments of the present invention will be described in detail with reference to accompanying drawing.
Referring to Fig. 1, the better embodiment of supply unit of the present invention includes a key switch circuit 100, power supply
And load circuit, a key switch circuit 100 include the first transistor, second transistor, the 3rd crystal
Pipe and key switch S.The load circuit includes single-chip microcomputer.
The first transistor, the second transistor and the second transistor include input, output
End and control terminal, the first transistor are the transistor of low level conducting, the second transistor and described
Third transistor is the transistor of high level conducting.In the present embodiment, the first transistor is p-type
Channel field-effect pipe QP1, the second transistor are N-type channel FET QN2, the 3rd crystal
Manage as N-type channel FET QN3, the input, output end of three transistors and control terminal difference
For drain electrode, source electrode, grid.
The key switch S includes the end 104 of first end 105 and second, the P-type channel FET QP1
Drain electrode 101 connect voltage input end Vin, the source electrode 102 of the P-type channel FET QP1 connects
Voltage output end Vout, the P-type channel FET QP1 grid 103 pass through resistance R1 connections institute
Voltage input end Vin is stated, the drain electrode 106 of the N-type channel FET QN2 connects the P-type channel
FET QP1 grid 103, the source ground of the N-type channel FET QN2, the N
Type channel field-effect pipe QN2 grid 107 connects the first end 105 of the key switch S, the button
Switch S the second end 104 is grounded by electric capacity C1.The second end 104 of the key switch S also passes through electricity
R2 connections P-type channel FET QP1 grid 103 is hindered, the voltage output end Vout passes through
Resistance R3 connections N-type channel FET QN3 drain electrode, the N-type channel FET QN3
Source electrode connect the grid of the N-type channel FET QN2 and be grounded by resistance R4.The N-type
Channel field-effect pipe QN3 grid 108 is grounded by resistance R5, the N-type channel FET QN3
Grid 108 be also connected with the pin IO of single-chip microcomputer.
The voltage input end Vin be used for receive the power supply supply voltage and it is described by compress switch S by
Output voltage gives the voltage output end Vout after pressure.The voltage output end Vout connections load circuit
(figure is to show), the single-chip microcomputer are located in the load circuit.When the voltage output end Vout is to described
When load circuit is powered, the pin IO of the single-chip microcomputer sends the control signal of high level to the N-type channel
FET QN3 grid 108 is to turn on the N-type channel FET QN3.
In the present embodiment, the DC voltage that the voltage input end Vin is received is 5V, the voltage output
The voltage of end output is 5V;All resistance is metal film resistor, and resistance R1, R3, R5 are preferred
Value 20K, resistance R4 preferred value 30K, resistance R2 preferred values 200K;Electric capacity C1 is ROHS, electricity
It is 3.3uF to hold C1 preferred values.
Fig. 1, Fig. 2 and Fig. 3 are referred to, in off state, FET QP1, QN2, QN3 locate
In off state, the now voltage at the second end 104 of the key switch S and P-type channel FET QP1
Grid 103 it is identical, be high level;Described N-type channel FET QN2, QN3 grid lead to respectively
Resistance R4, R5 ground connection are crossed, is low level.Push button switch S moment, the N-type channel field effect
Should pipe QN2 grid 107 be connected by the key switch S with the 104 of the electric capacity C1, the electricity
Hold C1 to power the FET QN2 and turn on the FET QN2;The P-type channel field
Effect pipe QP1 grid 103 is grounded by the N-type channel FET QN2 to be changed into low level,
Voltage input end Vin is set to power the voltage output end Vout so as to turn on.The voltage output end Vout
After being powered to the load circuit, the pin IO of the single-chip microcomputer sends the control signal of high level to institute
N-type channel FET QN3 grid 108 is stated to turn on the N-type channel FET QN3;This
When key switch S described in sustained hold, Vout*R2//R4/ (R2//R4+R3) be 2.8V be more than the N-type ditch
Road FET QN2's fully opens voltage 2.5V, and the N-type channel FET QN2 is persistently led
It is logical, opening state is locked, as shown in figure 3, the key switch S is unclamped, by R4/ (R4+R3) * Vout
For 3V voltage 2.5V, the N-type channel field-effect are fully opened more than N-type channel FET QN2
Pipe QN2 constant conductions, lock opening state.
Fig. 4 to Fig. 6 is referred to, in opening state, described transistor QP1, QN2, QN3 are all in leading
The grid of logical state, now the second end 104 and P-type channel FET QP1 of the key switch S
Pole 103 is identical, is low level;The voltage of the grid 107 of the N-type channel FET QN2:
R4/ (R4+R3) * Vout are that 3V fully opens voltage 2.5V more than the N-type channel FET QN2,
For high level;The grid 108 of the N-type channel FET QN3 receives the pin IO of the single-chip microcomputer
The control signal of high level is sent, is high level.The moment of the key switch S is pressed, such as Fig. 5 institutes
Show, the grid 107 of the N-type channel FET QN2 passes through the key switch S and the electric capacity
C1 is connected, and is changed into low level, the N-type channel FET QN2 shut-offs;The N-type channel field effect
Should pipe QN2 shut-offs, the electric capacity C1 charge by described resistance R1, R2, and the P-type channel field is imitated
Should pipe QP1 grid 103 voltage:Vin*R2/ (R1+R2) is that 4.2V is more than the P-type channel field-effect
Pipe QP1's complete switches off voltage 2.5V, the P-type channel FET QP1 shut-offs, the control source
Vin is held to stop powering to the load circuit.
After power remove, the pin IO of the single-chip microcomputer does not have high level signal to send, the N-type channel field
Effect pipe QN3 grid 108 is low level by resistance R5 drop-downs, the N-type channel FET QN3
Shut-off.If Continued depression key switch S, lead to as shown in fig. 6, resistance R1, R2, R4 form series connection
Road, and be by the voltage of the grid 103 of the P-type channel FET QP1:Vin*(R2+R4)
/ (R1+R2+R4) is equal to 4.6V, and voltage is complete switched off more than the P-type channel FET QP1
2.5V, therefore the P-type channel FET QP1 continues to turn off, the N-type channel FET QN2
The voltage of grid 107 be:Vin*R4/ (R1+R2+R4) is equal to 0.6V, less than the N-type channel FET
QN2's complete switches off voltage 0.7V, therefore the N-type channel FET QN2 is turned off, Continued depression
The key switch S will not also be such that power supply is connected with load.Unclamp the key switch S, FET
QP1, QN2, QN3 are all in off state.
When voltage input end Vin can not be to load circuit normal power supply, the N-type channel FET
QN3 grid 108 is pulled down by resistor R5 and turned off for low level.Press the wink of the key switch S
Between, as shown in Fig. 2 because the N-type channel FET QN3 is turned off, the N-type channel field-effect
Pipe QN2 grid 107 is at once low level by resistor R4 drop-downs, the N-type channel FET QN2
Shut-off, the grid 103 of the P-type channel FET QP1 is pulled up by resistance R1 to be turned off for high level;
If Continued depression key switch S, the electric capacity C1 is discharged rapidly by resistance R2, R4, and is entered
Enter shut-off lock-out state as shown in Figure 6.
Although the present invention has shown and described with reference to specific embodiment, those skilled in the art will
Understand:In the case where not departing from the spirit and scope of the present invention limited by claim and its equivalent,
The various change in form and details can be carried out herein.
Claims (8)
- An a kind of 1. key switch circuit, it is characterised in that a key switch circuit include the first transistor, Second transistor, third transistor and key switch, the first transistor, the second transistor and institute Stating second transistor includes input, output end and control terminal, and the first transistor turns on for low level Transistor, the second transistor is the transistor of high level conducting, and the key switch includes first end And second end, the input connection voltage input end of the first transistor, the output of the first transistor End connection voltage output end, the control terminal of the first transistor connect the control source by first resistor End, the input of the second transistor connect the control terminal of the first transistor, the second transistor Output head grounding, the control terminal of the second transistor connects the first end of the key switch, described to press Second end of key switch also connects institute by capacity earth, the second end of the key switch by second resistance The control terminal of the first transistor is stated, the voltage output end connects the third transistor by 3rd resistor Input, the output end of the third transistor connect the control terminal of the second transistor and by the 4th electricity Resistance ground connection, the voltage input end are used to receive supply voltage and the output voltage after the pressing switch press To the voltage output end, the voltage output end is used to connect load circuit, the control of the third transistor End processed is used to after the voltage input end output voltage is to the voltage output end receive from the load electricity The control signal on road and turn on third transistor.
- A 2. key switch circuit according to claim 1, it is characterised in that the third transistor For control terminal by the 5th resistance eutral grounding, the third transistor is the transistor of high level conducting.
- A 3. key switch circuit according to claim 2, it is characterised in that the third transistor is N-type FET, the control terminal of the third transistor are the grid of the N-type FET, described the The input of three transistors is the drain electrode of the N-type FET, and the output end of the third transistor is institute State the source electrode of N-type FET.
- A 4. key switch circuit according to claim 1, it is characterised in that the first transistor is P-type FET, the control terminal of the first transistor are the grid of the p-type FET, described first The input of transistor is the drain electrode of the p-type FET, and the output end of the first transistor is the P The source electrode of type FET.
- A 5. key switch circuit according to claim 1, it is characterised in that the second transistor is N-type FET, the control terminal of the second transistor are the grid of the N-type FET, described the The input of two-transistor is the drain electrode of the N-type FET, and the output end of the second transistor is institute State the source electrode of N-type FET.
- 6. a kind of supply unit, is characterised by, the supply unit includes any one of claim 1 to 5 One key switch circuit.
- 7. supply unit according to claim 6, it is characterised in that the supply unit also includes electricity Source, the power supply connect the voltage input end and are used to provide the supply voltage.
- 8. supply unit according to claim 6, it is characterised in that the supply unit also includes institute Load circuit is stated, the load circuit includes single-chip microcomputer, and the single-chip microcomputer connects the control of the third transistor End processed is used to export the control signal after the voltage input end output voltage is to the voltage output end.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610340445.3A CN107404314A (en) | 2016-05-20 | 2016-05-20 | One key switch circuit and the supply unit with a key switch circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610340445.3A CN107404314A (en) | 2016-05-20 | 2016-05-20 | One key switch circuit and the supply unit with a key switch circuit |
Publications (1)
Publication Number | Publication Date |
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CN107404314A true CN107404314A (en) | 2017-11-28 |
Family
ID=60389470
Family Applications (1)
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CN201610340445.3A Pending CN107404314A (en) | 2016-05-20 | 2016-05-20 | One key switch circuit and the supply unit with a key switch circuit |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108933585A (en) * | 2018-07-05 | 2018-12-04 | 科沃斯机器人股份有限公司 | A kind of active circuit and dust catcher |
EP4184793A3 (en) * | 2021-11-19 | 2023-08-02 | Shenzhen Moore Vaporization Health & Medical Technology Co., Ltd. | Power on/off circuit and electronic vaporization device |
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CN201516033U (en) * | 2009-09-22 | 2010-06-30 | 武汉力源信息技术股份有限公司 | Power supply soft switching circuit of fingertip pulse oximeter |
CN202395885U (en) * | 2011-12-20 | 2012-08-22 | Tcl集团股份有限公司 | Power switch and television set |
CN102664612A (en) * | 2012-04-26 | 2012-09-12 | 深圳众为兴技术股份有限公司 | Control device for automatic disconnection of power switch triggered at one time |
CN203434954U (en) * | 2013-07-29 | 2014-02-12 | 青岛海信移动通信技术股份有限公司 | Switching circuit with adjustable rise time and digital product |
CN205249167U (en) * | 2015-12-24 | 2016-05-18 | 深圳市拓普泰克电子有限公司 | Switch circuit and electronic equipment |
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Patent Citations (7)
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US20070235754A1 (en) * | 2006-04-06 | 2007-10-11 | Nec Electronics Corporation | Electronic switch circuit |
US20100019829A1 (en) * | 2008-07-28 | 2010-01-28 | Cegnar Erik J | Turn on-off power circuit for digital systems |
CN201516033U (en) * | 2009-09-22 | 2010-06-30 | 武汉力源信息技术股份有限公司 | Power supply soft switching circuit of fingertip pulse oximeter |
CN202395885U (en) * | 2011-12-20 | 2012-08-22 | Tcl集团股份有限公司 | Power switch and television set |
CN102664612A (en) * | 2012-04-26 | 2012-09-12 | 深圳众为兴技术股份有限公司 | Control device for automatic disconnection of power switch triggered at one time |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108933585A (en) * | 2018-07-05 | 2018-12-04 | 科沃斯机器人股份有限公司 | A kind of active circuit and dust catcher |
CN108933585B (en) * | 2018-07-05 | 2022-12-13 | 添可智能科技有限公司 | Activation circuit and dust collector |
EP4184793A3 (en) * | 2021-11-19 | 2023-08-02 | Shenzhen Moore Vaporization Health & Medical Technology Co., Ltd. | Power on/off circuit and electronic vaporization device |
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Application publication date: 20171128 |