CN107403792B - A kind of chip-scale COB mould group and its manufacturing method - Google Patents
A kind of chip-scale COB mould group and its manufacturing method Download PDFInfo
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- CN107403792B CN107403792B CN201710568468.4A CN201710568468A CN107403792B CN 107403792 B CN107403792 B CN 107403792B CN 201710568468 A CN201710568468 A CN 201710568468A CN 107403792 B CN107403792 B CN 107403792B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
Abstract
The present invention relates to a kind of manufacturing methods of chip-scale COB mould group, comprising: S1 prepares fluorescent plate: fluorescent plate being ready to for use, wherein fluorescent plate includes transparent substrate and fluorescent material, and the fluorescent material is located at the surface and/or inside of the transparent substrate；S2 point glue: glue is put on the transparent substrate；S3 installs LED chip: LED chip being fixed on the fluorescent plate, the LED chip includes luminescent layer and electrode, and when installation, the luminescent layer of the LED chip is connected with the fluorescent plate by glue；S4 installs circuit substrate: the electrode of LED chip on the fluorescent plate is welded on circuit substrate by tin cream.Correspondingly, the present invention also provides the chip-scale COB mould groups manufactured by the manufacturing method.Chip-scale COB mould group produced by the present invention has fully ensured that the luminous uniformity of all LED chips, uniform in light emission, the photochromic indifference of COB mould group, and high temperature resistant, long service life in the chip-scale COB mould group.
Description
Technical field
The present invention relates to a kind of LED encapsulation technology field more particularly to a kind of chip-scale COB mould groups and its manufacturing method.
Background technique
With the continuous development of semiconductor illumination technique, high power density, high-power, flip LED demand are increasing,
Traditional COB technology has gone to bottleneck point, when power is close due to the limitation of chip heat dissipation and size and COB structure itself
When spending high, the heat-resisting of silica gel for encapsulation has had arrived at the limit, and light decay is excessive, colloid turn yellow in addition colloid cracking
Phenomenon also frequently occurs, and service life is short；On the other hand, it when making COB mould group, generallys use tin cream and welds single led chip
It connects in the circuit board, since there are fine differences for the tin cream amount of welding, causes the inconsistent of LED chip height, it may appear that light
The more scattered phenomenon of color coordinates distribution.Therefore, it is necessary to propose a kind of novel COB mould group, problem above is solved.
The present invention proposes a kind of chip-scale COB mould group and its manufacturing method, can solve that LED chip height is inconsistent to ask
Topic, and high temperature resistant, long service life.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of chip-scale COB mould group and its manufacturing methods, can solve LED
Chip height inconsistence problems, and high temperature resistant, long service life.
In order to solve the above-mentioned technical problem, the present invention proposes a kind of manufacturing method of chip-scale COB mould group, comprising:
S1 prepares fluorescent plate: fluorescent plate being ready to for use, wherein fluorescent plate includes transparent substrate and fluorescent material, institute
State surface and/or inside that fluorescent material is located at the transparent substrate；
S2 point glue: glue is put on the transparent substrate；
S3 installs LED chip: LED chip being fixed on the fluorescent plate, the LED chip includes luminescent layer and electricity
Pole, when installation, the luminescent layer of the LED chip is connected with the fluorescent plate by glue；
S4 installs circuit substrate: the electrode of LED chip on the fluorescent plate is welded on circuit substrate by tin cream.
Preferably, the transparent substrate is one in transparent glass substrate, transparent ceramic base or transparent sapphire substrate
Kind, it is provided at least one chip installation area.
Preferably, at least provided with a LED chip inside a chip installation area, the LED chip is to fall
Fill LED chip.
Preferably, the glue is transparent glue.
Preferably, the circuit substrate is aluminum substrate, copper base or ceramic substrate comprising welding zone and circuit；
The position of the welding zone, quantity and size match with the position of the electrode of the LED chip, quantity and size.
Preferably, the circuit substrate further includes box dam, and the box dam surrounds all welding zones, and the LED chip is sealed
Between the circuit substrate and the fluorescent plate.
Preferably, further include S5 setting box dam: box dam is set between the circuit substrate and the fluorescent plate, it is described
Box dam surrounds all LED chips, and the LED chip is sealed between the circuit substrate and the fluorescent plate.
A kind of chip-scale COB mould group of manufacturing method manufacture, comprising: fluorescent plate is connected with the fluorescent plate
At least one LED chip, the glue for connecting the LED chip and the fluorescent plate, the circuit base being connected with the LED chip
The tin cream of plate and the connection LED chip and the circuit substrate, the fluorescent plate include transparent substrate and are located at described
The fluorescent material on transparent substrate surface and/or inside, the LED chip include luminescent layer and electrode, the luminescent layer with it is described
Fluorescent plate is connected by glue, and the electrode is electrically connected and is mechanically connected by the tin cream with the circuit substrate.
Preferably, the circuit substrate is aluminum substrate, copper base or ceramic substrate comprising welding zone and circuit, the weldering
Area is for realizing being electrically connected between the circuit substrate and the LED chip, position, quantity and size and the LED core
The position of the electrode of piece, quantity and size match.
It preferably, further include box dam, the box dam surrounds all between the circuit substrate and the fluorescent plate
The LED chip is sealed between the circuit substrate and the fluorescent plate by LED chip.
Compared with prior art, the beneficial effects of the present invention are:
1, the manufacturing method of chip-scale COB mould group provided by the invention, fits in fluorescent plate for the luminescent layer of LED chip
On, fluorescent plate is a plane, and therefore, the height of the luminescent layer of the LED chip is consistent, has fully ensured that the chip-scale
The luminous uniformity of all LED chips, solves in conventional fabrication processes, since the difference of solder causes chip in COB mould group
Height inconsistence problems, solve conventional package as glue amount thickness it is inconsistent caused by the photochromic difference problem of COB mould group, this hair
The luminescent layer of bright LED chip is in the same plane, uniform in light emission, the photochromic indifference of COB mould group.
2, the encapsulation of LED chip can be realized without silica gel in chip-scale COB mould group provided by the invention, and uses
Fluorescent plate and the equal high temperature resistant of circuit substrate, thoroughly solve the problems, such as COB mould group colloid turn yellow, cracking, extend chip
The service life of grade COB mould group.
3, chip-scale COB mould group provided by the invention, further includes box dam, the box dam be located at the circuit substrate with it is described
Between fluorescent plates, all LED chips are surrounded, the LED chip is sealed between the circuit substrate and the fluorescent plate,
The light for preventing LED chip from issuing is revealed between the circuit substrate and the fluorescent plate, to influence the chip-scale COB mould
The light-out effect of group.
Detailed description of the invention
Fig. 1 is the flow chart of the manufacturing method of chip-scale COB mould group of the present invention；
Fig. 2 is the flow chart of another embodiment of the manufacturing method of chip-scale COB mould group of the present invention；
Fig. 3 is the structural schematic diagram of chip-scale COB mould group of the present invention；
Fig. 4 is the structural schematic diagram of the chip of chip-scale COB mould group of the present invention.
Specific embodiment
It is with reference to the accompanying drawing and preferred real in order to make those skilled in the art more fully understand technical solution of the present invention
Applying example, the present invention is described in further detail.
Fig. 1 and 2 gives the manufacturing method flow chart of the chip-scale COB mould group of the present embodiment, gives with reference to the accompanying drawing
It illustrates.
As shown in Figure 1, a kind of manufacturing method of chip-scale COB mould group, comprising:
S1 prepares fluorescent plate: fluorescent plate is ready to for use, wherein fluorescent plate is surface and/or is internally provided with fluorescence
The transparent substrate of material, the transparent substrate are one in transparent glass substrate, transparent ceramic base or transparent sapphire substrate
Kind, it is provided at least one chip installation area, for installing LED chip；The fluorescent material can be set in described
The surface of bright substrate can also be doped in the inside of the transparent substrate, be selected with specific reference to actual needs.
Specifically, the transparent substrate is transparent ceramic base, and the fluorescent material is fluorescent powder, the fluorescent powder doping
Inside the transparent ceramic base, in other embodiments, the transparent substrate is transparent glass substrate or transparent sapphire
Substrate, the fluorescent material are the fluorescent film for being provided with fluorescent powder, and the fluorescent film is set to the surface of the transparent substrate.
S2 point glue: in the chip installation area internal point glue of transparent substrate, for realizing LED chip and transparent substrate it
Between be fixedly connected, wherein the glue be transparent glue, prevent LED chip issue light be blocked, to influence the core
The light extraction efficiency of chip level COB mould group, in the present embodiment, the model KER-3000-M2 of the transparent glue.
S3 installs LED chip: LED chip being fixed on inside the chip installation area of the fluorescent plate, a chip
At least provided with a LED chip inside installing zone, wherein the LED chip is flip LED chips comprising luminescent layer
And electrode, when installation, the luminescent layer of the LED chip is connected with the fluorescent plate by transparent glue；
S4 installs circuit substrate: the electrode of LED chip on the fluorescent plate is welded in the circuit substrate by tin cream
On, wherein the circuit substrate is aluminum substrate, copper base or ceramic substrate comprising welding zone and circuit, the welding zone is for real
Being electrically connected between the existing circuit substrate and the LED chip, position, quantity and size and the LED chip electrode
Position, quantity and size match, the circuit is for realizing the electrical connection and the core between the LED chip
Being electrically connected between chip level COB mould group and extraneous power supply.
The side blue light of the chip-scale COB mould group is revealed in order to prevent, is also set up on the circuit substrate of the invention
There is box dam, the box dam surrounds all welding zones, the LED chip is sealed between the circuit substrate and the fluorescent plate,
The light for preventing LED chip from issuing is revealed between the circuit substrate and the fluorescent plate, to influence the chip-scale COB mould
The light-out effect of group.
In other embodiment, it is not provided with box dam on the circuit substrate, as shown in Fig. 2, further including that S5 setting is enclosed
Dam: box dam is set between the circuit substrate and the fluorescent plate, and the box dam surrounds all LED chips, by the LED core
Piece is sealed between the circuit substrate and the fluorescent plate, prevent LED chip issue light from the circuit substrate with it is described
It is revealed between fluorescent plate, to influence the light-out effect of the chip-scale COB mould group.
The manufacturing method of chip-scale COB mould group provided by the invention, the luminescent layer of LED chip is fitted on fluorescent plate,
Fluorescent plate is a plane, and therefore, the height of the luminescent layer of the LED chip is consistent, has fully ensured that the chip-scale COB mould
The luminous uniformity of all LED chips, solves in conventional fabrication processes, since the difference of solder causes chip height not in group
Consensus, solve conventional package as glue amount thickness it is inconsistent caused by the photochromic difference problem of COB mould group, it is of the invention
The luminescent layer of LED chip is in the same plane, uniform in light emission, the photochromic indifference of COB mould group.
On the other hand, the chip-scale COB mould group of the manufacturing method manufacture of chip-scale COB mould group provided by the invention, is not necessarily to
Using silica gel, the fluorescent plate and the equal high temperature resistant of circuit substrate that the encapsulation of LED chip can be realized, and use, thoroughly solves COB
The problem of colloid of mould group turns yellow, cracks, extends the service life of chip-scale COB mould group.
Correspondingly, invention additionally discloses a kind of chip-scale COB mould groups, its structure is specifically addressed now in conjunction with attached drawing.
As shown in Figures 3 and 4, a kind of chip-scale COB mould group, comprising: fluorescent plate 1 is connected at least with the fluorescent plate 1
One LED chip 2, the glue 3 for connecting the LED chip 2 and the fluorescent plate 1, the circuit being connected with the LED chip 2
The tin cream 5 of substrate 4 and the connection LED chip 2 and the circuit substrate 4, the fluorescent plate 1 include transparent substrate 11 and
Fluorescent material 12 positioned at the transparent substrate surface and/or inside, the LED chip 2 include luminescent layer 21 and electrode 22, institute
It states luminescent layer 21 and is connected with the fluorescent plate 1 by glue 3, the electrode 22 passes through the tin cream 5 with the circuit substrate 4
Electrical connection and mechanical connection.
Transparent substrate 11 is one of transparent glass substrate, transparent ceramic base or transparent sapphire substrate, is set thereon
It is equipped at least one chip installation area, for installing the LED chip；The fluorescent material 12 can be set in the transparent base
The surface of plate can also be doped in the inside of the transparent substrate, be selected with specific reference to actual needs.
Specifically, the transparent substrate 11 is transparent ceramic base, and the fluorescent material 12 is fluorescent powder, the fluorescent powder
It is doped in inside the transparent ceramic base；In other embodiments, the transparent substrate 11 is transparent glass substrate or transparent
Sapphire substrate, the fluorescent material 12 are the fluorescent film for being provided with fluorescent powder, and the fluorescent film is set to the transparent substrate
Surface.
The LED chip 2 is flip LED chips, is located at the chip installation area comprising luminescent layer 21 and electrode 22,
The luminescent layer 21 is connected with the fluorescent plate 1 by glue 3, and the electrode 22 passes through the tin with the circuit substrate 4
The electrical connection of cream 5 and mechanical connection.
The glue 3 is transparent glue, prevents for realizing being fixedly connected between LED chip 2 and transparent substrate 1
The light that LED chip issues is blocked, so that the light extraction efficiency of the chip-scale COB mould group is influenced, it is described transparent in the present embodiment
The model KER-3000-M2 of glue.
The circuit substrate 4 is aluminum substrate, copper base or ceramic substrate comprising welding zone and circuit, the welding zone are used for
Realize being electrically connected between the circuit substrate 4 and the LED chip 2, position, quantity and size and the LED chip 2
The position of electrode 22, quantity and size match, the circuit for realizing the electrical connection between the LED chip 2 with
And being electrically connected between the chip-scale COB mould group and extraneous power supply.
The side blue light leakage of the chip-scale COB mould group in order to prevent, further includes box dam 6, the box dam 6 is located at described
Between circuit substrate 4 and the fluorescent plate 1, all LED chips 2 are surrounded, the LED chip 2 is sealed in the circuit base
Between plate 4 and the fluorescent plate 1, the light for preventing LED chip 2 from issuing is let out between the circuit substrate 4 and the fluorescent plate 1
Dew, to influence the light-out effect of the chip-scale COB mould group.
Compared with prior art, the beneficial effects of the present invention are:
1, the manufacturing method of chip-scale COB mould group provided by the invention, fits in fluorescent plate for the luminescent layer of LED chip
On, fluorescent plate is a plane, and therefore, the height of the luminescent layer of the LED chip is consistent, has fully ensured that the chip-scale
The luminous uniformity of all LED chips, solves in conventional fabrication processes, since the difference of solder causes chip in COB mould group
Height inconsistence problems, solve conventional package as glue amount thickness it is inconsistent caused by the photochromic difference problem of COB mould group, this hair
The luminescent layer of bright LED chip is in the same plane, uniform in light emission, the photochromic indifference of COB mould group.
2, the encapsulation of LED chip can be realized without silica gel in chip-scale COB mould group provided by the invention, and uses
Fluorescent plate and the equal high temperature resistant of circuit substrate, thoroughly solve the problems, such as COB mould group colloid turn yellow, cracking, extend chip
The service life of grade COB mould group.
3, chip-scale COB mould group provided by the invention, further includes box dam, the box dam be located at the circuit substrate with it is described
Between fluorescent plates, all LED chips are surrounded, the LED chip is sealed between the circuit substrate and the fluorescent plate,
The light for preventing LED chip from issuing is revealed between the circuit substrate and the fluorescent plate, to influence the chip-scale COB mould
The light-out effect of group.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (8)
1. a kind of manufacturing method of chip-scale COB mould group characterized by comprising
S1 prepares fluorescent plate: fluorescent plate is ready to for use, wherein fluorescent plate includes transparent substrate and fluorescent material, described glimmering
Luminescent material is located at the surface and/or inside of the transparent substrate；
S2 point glue: glue is put on the transparent substrate；
S3 installs LED chip: LED chip being fixed on the fluorescent plate, the LED chip includes luminescent layer and electrode, peace
When dress, the luminescent layer of the LED chip is connected with the fluorescent plate by glue；
S4 installs circuit substrate: the electrode of LED chip on the fluorescent plate is welded on circuit substrate by tin cream；
The circuit substrate is aluminum substrate, copper base or ceramic substrate comprising welding zone and circuit；
The position of the welding zone, quantity and size match with the position of the electrode of the LED chip, quantity and size；
Further include S5 setting box dam: box dam is set between the circuit substrate and the fluorescent plate, the box dam surrounds all
The LED chip is sealed between the circuit substrate and the fluorescent plate by LED chip.
2. the manufacturing method of chip-scale COB mould group according to claim 1, which is characterized in that the transparent substrate is
One of bright glass substrate, transparent ceramic base or transparent sapphire substrate, are provided at least one chip installation area.
3. the manufacturing method of chip-scale COB mould group according to claim 2, which is characterized in that a chip installation
At least provided with a LED chip inside area, the LED chip is flip LED chips.
4. the manufacturing method of chip-scale COB mould group according to claim 1, which is characterized in that the glue is transparent adhesive tape
Water.
5. the manufacturing method of chip-scale COB mould group according to claim 1, which is characterized in that the circuit substrate also wraps
Box dam is included, the box dam surrounds all welding zones, the LED chip is sealed between the circuit substrate and the fluorescent plate.
6. a kind of chip-scale COB mould group manufactured by any one of claim 1-5 characterized by comprising fluorescent plate and institute
State at least one LED chip that fluorescent plate is connected, the glue that connects the LED chip and the fluorescent plate, with the LED core
The tin cream of circuit substrate and the connection LED chip and the circuit substrate that piece is connected, the fluorescent plate includes transparent
Substrate and fluorescent material positioned at the transparent substrate surface and/or inside, the LED chip includes luminescent layer and electrode,
The luminescent layer is connected with the fluorescent plate by glue, and the electrode is electrically connected with the circuit substrate by the tin cream
And mechanical connection.
7. chip-scale COB mould group according to claim 6, which is characterized in that the circuit substrate is aluminum substrate, copper base
Or ceramic substrate comprising welding zone and circuit, the welding zone is for realizing the electricity between the circuit substrate and the LED chip
Connection, position, quantity and size and the position of the electrode of the LED chip, quantity and size match.
8. chip-scale COB mould group according to claim 6, which is characterized in that further include box dam, the box dam is located at described
Between circuit substrate and the fluorescent plate, surround all LED chips, by the LED chip be sealed in the circuit substrate with
Between the fluorescent plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710568468.4A CN107403792B (en) | 2017-07-13 | 2017-07-13 | A kind of chip-scale COB mould group and its manufacturing method |
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| CN201710568468.4A CN107403792B (en) | 2017-07-13 | 2017-07-13 | A kind of chip-scale COB mould group and its manufacturing method |
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| CN107403792A CN107403792A (en) | 2017-11-28 |
| CN107403792B true CN107403792B (en) | 2019-11-15 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448902A (en) * | 2014-08-25 | 2016-03-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | LED light-emitting device and manufacture method thereof |
| CN105470246A (en) * | 2015-12-21 | 2016-04-06 | 福建中科芯源光电科技有限公司 | Double-channel heat-conduction packaging structure and method for solid phosphor integrated light source |
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2017
- 2017-07-13 CN CN201710568468.4A patent/CN107403792B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448902A (en) * | 2014-08-25 | 2016-03-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | LED light-emitting device and manufacture method thereof |
| CN105470246A (en) * | 2015-12-21 | 2016-04-06 | 福建中科芯源光电科技有限公司 | Double-channel heat-conduction packaging structure and method for solid phosphor integrated light source |
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Effective date of registration: 20210909 Address after: 364000 No. 18, Yanhe Road, Huangzhu Village Industrial Zone, Lincheng Town, Shanghang County, Longyan City, Fujian Province Patentee after: Fujian Jingxu Semiconductor Technology Co.,Ltd. Address before: 528200 room A304, building a, Chongxian building (R & D building), Nanhai software technology park, Shishan town, Nanhai District, Foshan City, Guangdong Province Patentee before: FOSHAN EVERCORE OPTOELECTRONIC TECHNOLOGY Co.,Ltd. |
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