CN107400921A - Epitaxial device maintenance method - Google Patents
Epitaxial device maintenance method Download PDFInfo
- Publication number
- CN107400921A CN107400921A CN201710626408.3A CN201710626408A CN107400921A CN 107400921 A CN107400921 A CN 107400921A CN 201710626408 A CN201710626408 A CN 201710626408A CN 107400921 A CN107400921 A CN 107400921A
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- CN
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- Prior art keywords
- reaction chamber
- epitaxial device
- thermocouple
- device maintenance
- maintenance method
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Abstract
The invention provides a kind of epitaxial device maintenance method, the epitaxial device includes reaction chamber, the reaction chamber has air inlet and gas outlet, pedestal is provided with the reaction chamber, for placing silicon chip, heat sink is also equipped with the reaction chamber, the heat sink is between pedestal and gas outlet and positioned at the first half of reaction chamber；The epitaxial device maintenance method includes etch step, to remove the polysilicon layer deposited in the reaction chamber, etching property gas chlorination hydrogen and carrier gas hydrogen need to be passed through to the reaction chamber, etching temperature is 1165 DEG C 1175 DEG C.Compared with prior art, epitaxial device maintenance method provided by the invention, can effective extension device maintenance period, rise above 60000 microns/time maintenance period；Equipment capacity utilization rate is improved, reduces production cost.
Description
Technical field
The present invention relates to a kind of epitaxial device maintenance method.
Background technology
Epitaxial device utilizes the hydrogen silicon of trichlorine one or dichlorosilane and the reduction reaction of hydrogen, raw on single crystalline substrate silicon chip
Single crystal epitaxial is grown, with the increase of production epitaxial wafer number, the reaction chamber of equipment needs stop cleaning to maintain, and changes reaction chamber
Interior produces the major part of loss due to the regular etching of hydrogen chloride, such as pedestal (including base ring), thermocouple.
This is due to during epitaxial growth, except going out single crystal epitaxial in substrate monocrystal grown above silicon, in reaction chamber
The other regions in room can also grow polysilicon layer and be covered in surface, and this polysilicon layer can cause reaction chamber endoparticle, temperature change
Deng exception, hydrogen chloride can etch away the polysilicon layer for being covered in reaction chamber inner surface, but also cause major part in cavity
Loss.Therefore it is to realize that equipment is protected to reduce hydrogen chloride dosage and extend pedestal (including base ring) and its shelf-life of thermocouple sheath
Support the improvement direction in cycle.
On the premise of extension product quality is ensured, it is extension device maintenance period pair to extend part life in reaction chamber
It is significant to improve equipment capacity utilization rate, reduction production cost.
The content of the invention
The invention aims to overcome deficiency of the prior art, there is provided it is a kind of can extension device maintenance period it is outer
Rolling equipment maintenance method.
To realize object above, the present invention is achieved through the following technical solutions：
Epitaxial device maintenance method, it is characterised in that the epitaxial device includes reaction chamber, and the reaction chamber has
Air inlet and gas outlet, the reaction chamber is interior to be provided with pedestal, for placing silicon chip, is also equipped with absorbing heat in the reaction chamber
Device, the heat sink is between pedestal and gas outlet and positioned at the first half of reaction chamber；The epitaxial device maintenance
Method includes etch step, and to remove the polysilicon layer deposited in the reaction chamber, etching is passed through to the reaction chamber
Gas chlorination hydrogen and carrier gas hydrogen, etching temperature are 1165 DEG C -1175 DEG C.
According to a preferred embodiment of the invention, etch period is【8×(T-2)】Second, the T is in the reaction chamber
Silicon chip growth polysilicon layer thickness, unit is micron.
According to a preferred embodiment of the invention, hydrogen flowing quantity is 15-25 liters/min.
According to a preferred embodiment of the invention, the pedestal is made up of the graphite material coated with coat of silicon carbide, its
Middle coat of silicon carbide is prepared using fine grain.
According to a preferred embodiment of the invention, the pedestal has coat of silicon carbide, and the coat of silicon carbide is fine grain,
Particle diameter is 10-30 microns.
According to a preferred embodiment of the invention, the epitaxial device also includes heater and thermocouple temperature measuring apparatus, institute
State heater and be used for heating response chamber；The thermocouple temperature measuring apparatus includes four thermocouples, i.e. center thermocouple, front end
Thermocouple, rear end thermocouple, side thermocouple, wherein center thermocouple are located at the underface of pedestal.
According to a preferred embodiment of the invention, after the reaction chamber indoor location heat sink, the polysilicon of reaction chamber
Deposition is reduced, and thus can reduce the dosage of hydrogen chloride and the surface quality of silicon chip is not had an impact, the reduction of hydrogen chloride causes
Base-plates surface coat of silicon carbide thickness consumption it is slower, also cause reaction chamber in four thermocouples the quartz socket tube life-span more
It is long.
According to a preferred embodiment of the invention, the thickness of the quartz socket tube of the center thermocouple is 1.4-1.6 millimeters.
According to a preferred embodiment of the invention, the maintenance period of the epitaxial device is accumulative epitaxial thickness at least 60000
Micron/time.
Compared with prior art, epitaxial device maintenance method provided by the invention, can effective extension device maintenance period, protect
The foster cycle rises above 60000 microns/time；Equipment capacity utilization rate is improved, reduces production cost.
Brief description of the drawings
Fig. 1 is the structural representation of one chip epitaxial device of the present invention.
Fig. 2 is comparison diagram after pedestal of the present invention etching, and left figure fails due to turning to be yellow, coming off, and right figure is normal.
Fig. 3 is the micro- comparison diagram of the coat of silicon carbide of pedestal of the present invention, and left figure is fine grain, and right figure is coarse-grain
Grain.
Fig. 4 is the schematic diagram of the putting position of center thermocouple of the present invention.
Fig. 5 is the structural representation of center thermocouple of the present invention.
Embodiment
The present invention is described in detail below in conjunction with the accompanying drawings.
Referring to Fig. 1, epitaxial device includes reaction chamber 1, and the reaction chamber 1 has air inlet 2 (Inlet gas) and gone out
Gas port 3 (Exhaust gas), the reaction chamber 1 is interior to be provided with pedestal 5 (including base ring 6), described anti-for placing silicon chip 4
Answer and heat sink 11 is also equipped with chamber 1, the heat sink 11 is between pedestal 5 and gas outlet 3 and is located at reaction chamber
The first half of room 1；The epitaxial device also includes heater (not shown) and thermocouple temperature measuring apparatus, the heating dress
Put and be used for heating response chamber 1, the thermocouple temperature measuring apparatus includes four thermocouples, the i.e. (Center of center thermocouple 10
TC), front end thermocouple 7 (Front TC), rear end thermocouple 8 (Rear TC), wherein side thermocouple 9 (Side TC), center
Thermocouple 10 is located at the underface of pedestal 5, and the thickness of the quartz socket tube of center thermocouple is 1.4-1.6 millimeters；Remove described anti-
Answering the polysilicon layer of deposition in chamber 1 includes etch step, and etching property gas chlorination hydrogen and load need to be passed through to the reaction chamber 1
Gas hydrogen, etching temperature are 1165 DEG C -1175 DEG C, and etch period is the 15-25 seconds, and hydrogen flowing quantity is 15-25 liters/min.
As shown in figure 1, the rear of pedestal 5 sets heat sink 11, inventor's warp in the reaction chamber 1 of the epitaxial device
Cross research to find, this can allow the amorphous silicon deposition of original inwall of reaction chamber 1 for being deposited on the top of pedestal 5 in heat sink 11
On, compared to be deposited in reaction chamber quartz wall do reaction chamber etching every time when, the polysilicon layer of deposition is easier to be moved
Remove.
After installing heat sink 11, because the coating of reaction chamber rear end is more easy to be removed, you can will be used to etch instead
Answer the etch step of chamber rear end to remove, also just reduce the dosage of hydrogen chloride, and because hydrogen chloride is in reaction chamber each zero
Part has corrosiveness, therefore the etch period of hydrogen chloride and dosage can be reduced further, so as to extend each part of reaction chamber
Life-span.
Grown above silicon polysilicon layer in the reaction chamber includes etch step, need to be passed through etching property gas chlorination hydrogen
With carrier gas hydrogen, etches polycrystalline silicon layer at being 1165 DEG C -1175 DEG C in etching temperature, etch step is contracted by 5 original steps or 3 steps
Short is 2 steps.Original etch step is divided into two methods of 5 steps or 3 step, is respectively used to front end, middle-end and the rear end of etching cavity,
Hydrogen setting flow in each step is respectively 5-20 liters/min, 20-60 liters/min and 60-90 liters/min, in installation heat absorption dress
After putting 11, the polycrystal layer of reaction cavity rear end is less susceptible to deposit and is more easy to be removed, therefore the etch step after optimizing can shorten to 2
Step, the i.e. front end of an etching cavity and middle-end.Etch period is by original【8×(T+1)】Second is adjusted to【8×(T-2)】
Second (wherein, T is the thickness of the polysilicon layer of the silicon chip growth in the reaction chamber, and unit is micron), and etch period
Minimum 20 seconds, the numerical value such as calculated according to above-mentioned formula was less than 20, then etch period is arranged to 20 seconds.
For etching temperature, 1165 DEG C -1175 DEG C are adjusted to by 1190 DEG C of original standard.In the prior art, it is raising
Etch rate, the method that generally use raises etching temperature.But inventor has found that etching temperature exists with etch rate
Linear in 1000-1170 DEG C of temperature range, i.e., etching temperature is higher, and etch rate is higher；But more than 1170 DEG C extremely
In 1200 DEG C of temperature ranges, etch rate is in " saturation " state, and etch rate does not change substantially corresponding to the rise of temperature.Will
Etching temperature is adjusted to 1165 DEG C -1175 DEG C by 1190 DEG C of original standard so that the life of thermocouple, and reduce liter
Temperature fall time.
Set for the hydrogen flowing quantity of etching, different hydrogen flowing quantities is mainly used in carrying hydrogen chloride etching reaction chamber
1 diverse location, after heat sink 11 is installed, mainly need etch quartz reaction chamber front end and pedestal, therefore hydrogen usage is from original
55 liters/min, 80 liters/min of first standard are reduced to 15-25 liters/min.
Pedestal 5 (including base ring) is used to place silicon substrate 4 and heat transfer, and it is mainly by coated with coat of silicon carbide
Graphite material is made, and the thickness and preparation method of coat of silicon carbide influence maximum to heat transfer, carborundum service life etc..Carbonization
Silicon coating thickness is thicker, and the etch period of resistance to hydrogen chloride is longer, but the increase of thickness also results in heat transfer, the heat on product should
Power inequality equitemperature.The life-span of pedestal 5 (including base ring) in addition to by being reflected in product performance exception, passes through mesh
Survey, which can also be observed that on phase surface, to be there is pin hole (Pinhole) and back side jaundice or even occurs to peel off (Peeling off), such as
Shown in Fig. 2.
In the case where coat of silicon carbide thickness is certain, the preparation method of coat of silicon carbide is to pedestal (including base ring)
Aging effects are the most notable.The preparation of coat of silicon carbide is embodied in different microstructures, mainly including coarse grain (Large
Grain) or fine grain (Fine grain), as shown in figure 3, left figure is fine grain, particle diameter is generally 10-30 microns, and right figure is
Coarse grain, particle diameter are generally 150-200 microns, and life-span of two kinds of structures under hydrogen chloride etching shows different.Inventor through than
Life-span compared with two kinds of pedestals (including base ring) finds that pedestal (including base ring) surface roughness of fine grained structure is more excellent,
Under the high-temp chlorination hydrogen etching of epitaxial device, pin hole and back side yellowing phenomenon are less also easy to produce, i.e. the life-span is longer.
Thermocouple is mainly used in measuring the temperature of reaction chamber, and center thermocouple 10 is in the underface of pedestal 5, such as Fig. 4
Shown, the quartz socket tube outside it is easily chlorinated hydrogen etching and is lost gradually, therefore the thickness for thickening quartz socket tube can effectively prolong
The life-span of long thermocouple.As shown in figure 5, thermocouple, after high temperature etches, height is coarse not on the surface of quartz socket tube 12 of outside
Flat, part has been chlorinated hydrogen and etched away, and quartz socket tube loses its protective effect to temp probe 13, and whole thermocouple loses
Service behaviour and fail.But side effect is also brought along after thickening thermocouple, such as influences temperature rate, the accuracy of thermometric.
Inventor verifies through test of many times, by the thickness of the quartz socket tube 12 of center thermocouple 10 from original 1.25 millimeters thicken to
1.4-1.6 millimeters (such as 1.5 millimeters), the thermometric performance of thermocouple can not be both influenceed, also the life-span of thermocouple can effectively be prolonged
It is long.
By above-described optimize technique after heat sink is installed to one chip epitaxial device, such as remove the more of deposition
Etching temperature, etch period, the hydrogen flowing quantity of crystal silicon layer, the pedestal (including base ring) prepared using fine grained structure, and
The thickness of center thermocouple quartz socket tube is thickened to 1.4-1.6 millimeters from original 1.25 millimeters, can be made outside the one chip
The maintenance cleaning cycle of rolling equipment extends to from accumulation micron/time of epitaxial thickness 45000>60000 microns/time, this is same at home
Maintenance period has reached highest in kind type device, greatly improves equipment capacity and reduces production cost.
One~embodiment of embodiment three
The each several part data of embodiment one to embodiment three are as shown in table 1.
Table 1：
Wherein, in embodiment three, because etch period was less than 20 seconds, calculated within 20 seconds according to minimum value.
Embodiment in the present invention is only used for that the present invention will be described, and is not construed as limiting the scope of claims limitation,
Other substantially equivalent replacements that those skilled in that art are contemplated that, all fall in the scope of protection of the present invention.
Claims (9)
1. epitaxial device maintenance method, it is characterised in that the epitaxial device includes reaction chamber, the reaction chamber have into
Gas port and gas outlet, the reaction chamber is interior to be provided with pedestal, and for placing silicon chip, heat absorption dress is also equipped with the reaction chamber
Put, the heat sink is between pedestal and gas outlet and positioned at the first half of reaction chamber；The epitaxial device maintenance side
Method includes etch step, and to remove the polysilicon layer deposited in the reaction chamber, etching property gas is passed through to the reaction chamber
Body hydrogen chloride and carrier gas hydrogen, etching temperature are 1165 DEG C -1175 DEG C.
2. epitaxial device maintenance method according to claim 1, it is characterised in that etch period is【8×(T-2)】Second,
The T is the thickness of the polysilicon layer of the silicon chip growth in the reaction chamber, and unit is micron.
3. epitaxial device maintenance method according to claim 1, it is characterised in that hydrogen flowing quantity is 15-25 liters/min.
4. epitaxial device maintenance method according to claim 1, it is characterised in that the pedestal is by coated with carborundum
The graphite material of coating is made, and wherein coat of silicon carbide is prepared using fine grain.
5. epitaxial device maintenance method according to claim 4, it is characterised in that the pedestal has coat of silicon carbide,
The coat of silicon carbide is fine grain, and particle diameter is 10-30 microns.
6. epitaxial device maintenance method according to claim 1, it is characterised in that the epitaxial device also includes heating dress
Put and thermocouple temperature measuring apparatus, the heater are used for heating response chamber；The thermocouple temperature measuring apparatus includes four heat
Galvanic couple, i.e. center thermocouple, front end thermocouple, rear end thermocouple, side thermocouple, wherein center thermocouple are being located at pedestal just
Lower section.
7. epitaxial device maintenance method according to claim 6, it is characterised in that the reaction chamber indoor location heat absorption dress
Postpone, the polysilicon deposition of reaction chamber is reduced, and thus can reduce the dosage of hydrogen chloride and the surface quality of silicon chip is not produced
Influence, the reduction of hydrogen chloride make it that the coat of silicon carbide thickness consumption of base-plates surface is slower, also causes four in reaction chamber
The quartz socket tube life-span of thermocouple is longer.
8. epitaxial device maintenance method according to claim 6, it is characterised in that the quartz socket tube of the center thermocouple
Thickness be 1.4-1.6 millimeters.
9. epitaxial device maintenance method according to claim 1, it is characterised in that the maintenance period of the epitaxial device is
Accumulative epitaxial thickness at least 60000 microns/time.
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| CN201710626408.3A CN107400921A (en) | 2017-07-27 | 2017-07-27 | Epitaxial device maintenance method |
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| CN201710626408.3A CN107400921A (en) | 2017-07-27 | 2017-07-27 | Epitaxial device maintenance method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109003886A (en) * | 2018-07-04 | 2018-12-14 | 上海晶盟硅材料有限公司 | The preparation method of middle thickness extension |
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|---|---|---|---|---|
| JPS53133367A (en) * | 1977-04-27 | 1978-11-21 | Hitachi Ltd | Silicon vapor phase epitaxial growing method |
| EP1533836A1 (en) * | 2002-08-28 | 2005-05-25 | Shin-Etsu Handotai Co., Ltd | Method for manufacturing silicon epitaxial wafer |
| CN101783288A (en) * | 2009-01-14 | 2010-07-21 | 硅电子股份公司 | Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| CN103820849A (en) * | 2012-11-16 | 2014-05-28 | 有研半导体材料股份有限公司 | Technology for producing 12-inch monocrystalline silicon epitaxial wafers through pressure reduction |
| CN104319235A (en) * | 2014-10-23 | 2015-01-28 | 中国电子科技集团公司第四十六研究所 | Manufacture method of silicon epitaxial slice for fast recovery diode |
| CN105671631A (en) * | 2016-02-05 | 2016-06-15 | 浙江金瑞泓科技股份有限公司 | Method for cleaning back face of 200 mm-300 mm epitaxial device base in situ |
| CN106783571A (en) * | 2016-12-29 | 2017-05-31 | 上海晶盟硅材料有限公司 | Polysilicon layer lithographic method in epitaxy machine platform cavity |
-
2017
- 2017-07-27 CN CN201710626408.3A patent/CN107400921A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53133367A (en) * | 1977-04-27 | 1978-11-21 | Hitachi Ltd | Silicon vapor phase epitaxial growing method |
| EP1533836A1 (en) * | 2002-08-28 | 2005-05-25 | Shin-Etsu Handotai Co., Ltd | Method for manufacturing silicon epitaxial wafer |
| CN101783288A (en) * | 2009-01-14 | 2010-07-21 | 硅电子股份公司 | Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| CN103820849A (en) * | 2012-11-16 | 2014-05-28 | 有研半导体材料股份有限公司 | Technology for producing 12-inch monocrystalline silicon epitaxial wafers through pressure reduction |
| CN104319235A (en) * | 2014-10-23 | 2015-01-28 | 中国电子科技集团公司第四十六研究所 | Manufacture method of silicon epitaxial slice for fast recovery diode |
| CN105671631A (en) * | 2016-02-05 | 2016-06-15 | 浙江金瑞泓科技股份有限公司 | Method for cleaning back face of 200 mm-300 mm epitaxial device base in situ |
| CN106783571A (en) * | 2016-12-29 | 2017-05-31 | 上海晶盟硅材料有限公司 | Polysilicon layer lithographic method in epitaxy machine platform cavity |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109003886A (en) * | 2018-07-04 | 2018-12-14 | 上海晶盟硅材料有限公司 | The preparation method of middle thickness extension |
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Application publication date: 20171128 |