CN107394323A - Internet of things oriented silicon substrate SIW band metal column cantilever beam restructural bandpass filters - Google Patents
Internet of things oriented silicon substrate SIW band metal column cantilever beam restructural bandpass filters Download PDFInfo
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- CN107394323A CN107394323A CN201710425751.1A CN201710425751A CN107394323A CN 107394323 A CN107394323 A CN 107394323A CN 201710425751 A CN201710425751 A CN 201710425751A CN 107394323 A CN107394323 A CN 107394323A
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- siw
- silicon substrate
- metal
- bandpass filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
- H01P1/2088—Integrated in a substrate
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Abstract
The invention discloses a kind of silicon substrate SIW of internet of things oriented band metal column cantilever beam restructural bandpass filters, including SIW bandpass filters, exchanging structure (3) and the MEMS cantilever beam structures with metal column.MEMS cantilever beam structures with metal column include MEMS cantilever beams (6), MEMS cantilever beams are suspended on silicon substrate (1) by the support of anchor area (7), metal column (11) is provided with the lower surface of MEMS cantilever beams, the position that silicon substrate corresponds to metal column offers hole (14), and the hole (14) enters in silicon substrate (1) through the silicon nitride layer (10) on silicon substrate (1) and upper surface metal level (5).The present invention is only needed by controlling the state of MEMS cantilever beams just to change the centre frequency of filter passband, reach the purpose of switching filter passband central frequency, MEMS cantilever beams can realize the conversion of quick DOWN states and UP states, can effectively realize the control to filter filtering scope in microwave circuit.
Description
Technical field
The invention belongs to the technical field of microelectromechanical systems, and in particular to a kind of silicon substrate SIW bands of internet of things oriented
Metal column cantilever beam restructural bandpass filter.
Background technology
In recent years, as the Internet of Things communication technology obtains the development of high speed, art of microwave filters is as Internet of Things Netcom
One of important device in letter technology, turns into the focus of research again, and wave filter can be used for obstructing or separating different frequency range
Signal.In order to meet the high speed development demand of modern portable wireless communication technology, microwave filter will not only have high-quality
Factor, the advantages that high power capacity, more there is low-power consumption, minimize, the advantages of high integration.And with Internet of things system
Communication service it is increasingly various so that natively limited frequency spectrum resource becomes more nervous, in order to more effectively utilize frequency spectrum
The technology such as resource, spread spectrum, frequency hopping, dynamic frequency allocation is widely used, and frequency adjustable filter is as these technologies
Primary Component be also increasingly taken seriously.
The appearance of substrate integration wave-guide (SIW) technology provides solution for above mentioned problem, and SIW is close by two winding displacements
Formed in metal throuth hole or metal cylinder the insertion substrate of arrangement, the electromagnetic wave in SIW is limited in two gold up and down of substrate
Category face and the regional spread asked of two row metal throuth holes, formation is guided wave structure, so SIW not only inherits conventional waveguide loss
It is low, the advantages that power capacity is big, and quality factor are high, also with low section, the advantages that small size, it is easy to and other microwave circuit phases
It is integrated.In addition, the SIW devices made of silicon can be integrated easily with other circuits or silicon-based devices.Due to Jie of silicon
Electric constant is much higher relative to the dielectric constant of PCB or LTCC backing materials, so the SIW of silicon substrate can be used in the device of high frequency
On part, and it can effectively reduce the volume of device.
The movable structure being made up of MEMS cantilever beams is typical reconstructing element, and MEMS cantilever beams hardly consume directly
Electric current is flowed, so it also has the advantages of low-power consumption while high reliability and the remarkable linearity is possessed.
The content of the invention
It is an object of the invention to provide a kind of silicon substrate SIW of internet of things oriented band metal column cantilever beam restructural band logical filters
Ripple device, the MEMS cantilever beams with metal column are added on the basis of SIW bandpass filters, with each humorous in SIW bandpass filters
Shake introduce in chamber can dynamic condenser, adjust the resonant frequency of each resonator, finally realize the restructural purpose of filter passband, can
To control the trend of work of wave filter.
The present invention solves its technical problem and is achieved through the following technical solutions：
A kind of silicon substrate SIW band metal column cantilever beam restructural bandpass filters of internet of things oriented, including SIW bandpass filterings
Device and MEMS cantilever beam structures；
The SIW bandpass filters include SIW structures, and SIW structures include the silicon substrate as medium, the upper table of silicon substrate
Face and lower surface are plated with metal level, and metal throuth hole one, and adjacent metal through hole are equipped with the silicon substrate and metal level
The length of metal throuth hole one diameter of the distance between one central shaft less than twice, positioned at the gold of silicon substrate upper and lower surface
It is symmetrically parallel to belong to layer, and the metal level of silicon substrate upper surface is provided with silicon nitride layer；The SIW structures pass through metal throuth hole
Two are divided into several SIW resonators, and metal throuth hole two is between the symmetrical parallel metal throuth hole one of two rows, and metal throuth hole
One is identical with the structure of metal throuth hole two；
The MEMS cantilever beam structures are arranged on the silicon nitride layer of SIW resonators, and MEMS cantilever beam structures include MEMS
Cantilever beam, one end of MEMS cantilever beams are provided with anchor area, and MEMS cantilever beams are erected on the silicon nitride layer of silicon substrate by anchor area, and
Anchor area is fixedly connected with silicon nitride layer；Be provided with the lower surface of MEMS cantilever beams a diameter of 200 μm, length be 24 μm of metals
Post, and the silicon substrate correspond to metal column position offer a diameter of 202 μm, depth be 24 μm of hole, and hole is through silicon lining
Silicon nitride layer and upper surface metal level on bottom enter in silicon substrate, and the metal column is stretched into hole；On the downside of MEMS cantilever beams
Silicon nitride layer is provided with pull-down electrode, and silicon dioxide layer is enclosed with pull-down electrode.
Further, in addition to exchanging structure, exchanging structure are to be carried between microstrip line and SIW bandpass filters to turn
Change structure, exchanging structure one end is connected with microstrip line, and the exchanging structure other end is connected with SIW bandpass filters, exchanging structure with
The port of microstrip line connection is equal with micro belt line width, and the width for the port that exchanging structure is connected with SIW bandpass filters uses
Be width with SIW bandpass filter characteristic impedance value identical microstrip lines.
Further, the exchanging structure length is a quarter of the wavelength at SIW bandpass filter centre frequencies.
Further, the characteristic impedance of the microstrip line is 50 ohm.
Further, the anchor area is made of polysilicon.
Beneficial effects of the present invention are：
Restructurals of the silicon substrate SIW of internet of things oriented of the present invention with metal column cantilever beam restructural bandpass filter passband
Control is carried out by the cantilever beam with metal column, specifically needs to control passive filter passband central frequency frequency at some
In the circuit of numerous switching, if applying heretofore described restructural SIW bandpass filters in the circuit, it is only necessary to pass through
The state of control MEMS cantilever beams can just change the centre frequency of filter passband, reach switching filter passband central frequency
Purpose, this just avoid well need in circuit by increase different center frequency wave filter quantity go control circuit
The problem of, and the voltage required for the closure of MEMS cantilever beams is applied voltage, has insulating barrier to obstruct filter circuit, institute
Not interfere with the normal work of circuit substantially, the power consumption of circuit control can be effectively reduced, MEMS cantilever beams can be realized
The conversion of quick DOWN states and UP states, can effectively realize the control to filter filtering scope in microwave circuit.
Brief description of the drawings
Fig. 1 is that structures of the silicon substrate SIW of internet of things oriented of the present invention with metal column cantilever beam restructural bandpass filter is bowed
Depending on schematic diagram；
Fig. 2 be in Fig. 1 B-B ' to diagrammatic cross-section；
Fig. 3 be in Fig. 1 A-A ' to diagrammatic cross-section.
Description of reference numerals
1- silicon substrates, 2- metal throuth holes one, 3- exchanging structures, 4- microstrip lines, 5- metal levels, 6-MEMS cantilever beams, 7- anchors
Area, 8- pull-down electrodes, 9-SIW resonators, 10- silicon nitride layers, 11- metal columns, 12- leads, 13- metal throuth holes two, 14- holes,
15- silicon dioxide layers.
Embodiment
Below by specific embodiment, the invention will be further described, and following examples are descriptive, is not limit
Qualitatively, it is impossible to which protection scope of the present invention is limited with this.
The silicon substrate SIW band metal column cantilever beam restructural bandpass filters of internet of things oriented, including SIW bandpass filters,
MEMS cantilever beam structures and exchanging structure 3；
As shown in figure 1, SIW bandpass filters include SIW structures, SIW structures include the silicon substrate 1 as medium, silicon lining
The upper and lower surface at bottom 1 is plated with metal level 5, and metal throuth hole 1 is equipped with silicon substrate 1 and metal level 5, and adjacent
The length of metal throuth hole one 2 diameter of the distance between the central shaft of metal throuth hole 1 less than twice, is so to prevent electromagnetism
Ripple is revealed.Metal level 5 positioned at the upper and lower surface of silicon substrate 1 is symmetrically parallel, and the metal level of the upper surface of silicon substrate 1
5 are provided with silicon nitride layer 10.In Fig. 1, SIW structures are divided into four SIW resonators 9, metal throuth hole by metal throuth hole 2 13
2 13 between the symmetrical parallel metal throuth hole 1 of two rows, and metal throuth hole 1 is identical with the structure of metal throuth hole 2 13, phase
Coupling window be present in the part not occupied between adjacent SIW resonators 9 by metal throuth hole 2 13.
As shown in Fig. 2 MEMS cantilever beam structures are arranged on the silicon nitride layer 10 of SIW resonators 9, MEMS cantilever beam structures
Including MEMS cantilever beams 6, one end of MEMS cantilever beams 6 is provided with the anchor area 7 made of polysilicon, and MEMS cantilever beams 6 pass through anchor area 7
It is erected on the silicon nitride layer 10 of silicon substrate 1, and anchor area 7 is fixedly connected with silicon nitride layer 10.On the lower surface of MEMS cantilever beams 6
Be provided with a diameter of 200 μm, length be 24 μm of metal columns 11, the position of the corresponding metal column 11 of silicon substrate 1 offers a diameter of 202
μm, depth be 24 μm of hole 14, and hole 14 enters silicon substrate 1 through the silicon nitride layer 10 on silicon substrate 1 and upper surface metal level 5
In.Metal column 11 is stretched into hole 14, and the bottom in the bottom of metal column 11 and hole 14 has a gap, and metal column 11 can be with
MEMS cantilever beams 6 move up and down.The silicon nitride layer 10 of the downside of MEMS cantilever beams 6 is provided with pull-down electrode 8, and in pull-down electrode 8
It is enclosed with silicon dioxide layer 15.The purpose for wrapping up in silicon dioxide layer 15 is to prevent the direct of MEMS cantilever beams 6 and pull-down electrode 8
Contact, because if both directly contact, both potentials can be made identical.In Fig. 1, six are employed in each SIW resonators 9
MEMS cantilever beams 6, and this six MEMS cantilever beams 6 are divided to for two row, each column three, six MEMS cantilever beams 6 are symmetrically parallel.
Pull-down electrode 8 under each row MEMS cantilever beams 6 is together in series by a lead 12, and lead 12 is produced on silicon nitride layer 10
On, to apply actuation voltage.
Exchanging structure 3 is to be carried in transformational structure between microstrip line 4 and SIW bandpass filters, the one end of exchanging structure 3 with
Microstrip line 4 is connected, and the other end of exchanging structure 3 is connected with SIW bandpass filters.Port that exchanging structure 3 is connected with microstrip line 4 with
The width of microstrip line 4 is equal, and the characteristic impedance of microstrip line 4 is 50 ohm.The port that exchanging structure 3 is connected with SIW bandpass filters
Width using the width with SIW bandpass filter characteristic impedance value identical microstrip lines.The length of exchanging structure 3 is SIW
The a quarter of wavelength at bandpass filter centre frequency.
MEMS cantilever beams 6 rely on a Ge Mao areas 7 in silicon substrate SIW bands metal column cantilever beam restructural bandpass filter of the present invention
Support be suspended on silicon substrate 1, this is typical MEMS cantilever beam structures, is provided with the lower surface of MEMS cantilever beams 6
Metal column 11, the position of the corresponding metal column 11 of silicon substrate 1 offers the hole 14 that a diameter of 202 μm of depth are 24 μm, and hole 14 is worn
Cross the silicon nitride layer 10 on silicon substrate 1 and upper surface metal level 5 enters in silicon substrate 1, therefore metal column 11 can be with MEMS
Cantilever beam 6 moves up and down.In the presence of not having voltage in pull-down electrode 8, MEMS cantilever beams 6 can not be pulled down, SIW bandpass filterings
Device keeps original pass-band performance；When being pulled down in pull-down electrode 8 with the presence of voltage MEMS cantilever beams 6, metal column 11 can
Stretch into hole 14, the size of the electric capacity formed between metal column 11 and the lower surface metal layer 5 of SIW resonators 9 can be changed, electricity
Hold the resonant frequency that the change of size can change SIW resonators 9, and then change the free transmission range of SIW bandpass filters, realize
The restructural of SIW bandpass filters.
The preparation method of silicon substrate cantilever beam restructural SIW bandpass filters includes following steps：
(1) high resistance type silicon substrate 1 is prepared, its thickness is 400 μm；
(2) high resistance type silicon substrate 1 is punched using laser, to punching completely；
(3) gold-plated, formation metal throuth hole 1 and gold on the through-hole wall surface of silicon substrate 1 are carried out to the silicon substrate 1 of punching
Belong to through hole 2 13, metal throuth hole 1 and the diameter of metal throuth hole 2 13 are 180 μm, and the upper and lower surface of silicon substrate 1 is respectively provided with one layer thin
Metal level 5, its thickness be 3 μm；
(4) one layer of photoresist is coated in the ad-hoc location of metal level 5, what the ad-hoc location referred to is exactly microstrip line 4 and Change-over knot
Position where structure 3, photoetching do not coat the metal level of photoresist and remove microstrip line 4 and the light of the position of transformational structure 3
Photoresist, form microstrip line 4 and exchanging structure 3；
(5) one layer of silicon nitride layer 10 is deposited in the upper surface of SIW filter cavities, is needing the position in making hole 14,
It is 24 μm of hole 14 that a diameter of 200 μm of depth are got since silicon nitride layer 10, and wave filter upper surface after drilling except
One layer of photoresist of position spin coating outside hole 14；
(6) one layer of photoresist is all coated around the position for needing to make pull-down electrode 8, remove needs to make on this basis
Make the electrode Board position of MEMS cantilever beams 6 and the photoresist of the position of lead 12, photoresist here is just coated in this step 5
's.Then one layer of Al is deposited, is removed around pull-down electrode 8 on remaining those photoresists and photoresist for not being removed also
Al, form pull-down electrode 8 and lead 12, the thickness of pull-down electrode is 2 μm；
(7) silica is deposited in pull-down electrode 8, forms the coating silicon dioxide layer 15 of pull-down electrode 8, its thickness
For 1 μm；
(8) the position deposit polycrystalline silicon in anchor area 7 is being made using CVD technology, is being etched by dry etching technology at anchor area 7
Polysilicon, retain the polysilicon of the position of anchor area 7 of MEMS cantilever beams 6, polysilicon anchor area thickness is 4 μm；
(9) PMGI sacrifice layers are formed in the position for needing to make MEMS cantilever beams 6 and metal column 11 by spin coating mode,
The other positions coating photoresist in anchor area 7 is removed around PMGI sacrifice layers；
(10) punched on PMGI sacrifice layers, the growth position of metal column 11 is reserved, on PMGI sacrifice layers and photoresist
And evaporation side grows Au floor in anchor area 7, metal column 11 can be formed by evaporating the Au of growth, and Au Ceng Huiyumao areas 7 connect and covered
PMGI sacrifice layers and photoresist layer；
(11) the Au layers above photoresist are all etched, only retain the Au layers formed above the position of MEMS cantilever beams 6,
The layer gold width remained is 200 μm, and length is 400 μm, coating among subsequent removal step 9, except PMGI sacrifice layers
The photoresist all coated with all places beyond anchor area 7；
(12) PMGI sacrifice layers are discharged, the Au layers being retained can form the MEMS cantilever beams 6 and cantilever beam 6 of suspension
The metal column 11 of lower section, the width of MEMS cantilever beams 6 is 200 μm, and length is 400 μm, a diameter of 200 μm of metal column 11, long
Spend for 24 μm.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (5)
- A kind of 1. silicon substrate SIW band metal column cantilever beam restructural bandpass filters of internet of things oriented, it is characterised in that：Including SIW bandpass filters and MEMS cantilever beam structures；The SIW bandpass filters include SIW structures, and SIW structures include the silicon substrate (1) as medium, silicon substrate (1) it is upper Surface and lower surface are plated with metal level (5), and metal throuth hole one (2) is equipped with the silicon substrate (1) and metal level (5), And the length of metal throuth hole one (2) diameter of the distance between adjacent metal through hole one (2) central shaft less than twice, served as a contrast positioned at silicon The metal level (5) of bottom (1) upper and lower surface is symmetrically parallel, and the metal level (5) of silicon substrate (1) upper surface is provided with Silicon nitride layer (10)；The SIW structures are divided into several SIW resonators (9), metal throuth hole two by metal throuth hole two (13) (13) between the symmetrical parallel metal throuth hole one (2) of two rows, and metal throuth hole one (2) and metal throuth hole two (13) structure phase Together；The MEMS cantilever beam structures are arranged on the silicon nitride layer (10) of SIW resonators (9), and MEMS cantilever beam structures include MEMS cantilever beams (6), one end of MEMS cantilever beams (6) are provided with anchor area (7), and MEMS cantilever beams (6) are erected at silicon by anchor area (7) On the silicon nitride layer (10) of substrate (1), and anchor area (7) are fixedly connected with silicon nitride layer (10)；The lower surface of MEMS cantilever beams (6) On be provided with a diameter of 200 μm, length be 24 μm of metal columns (11), and the position of the corresponding metal column (11) of the silicon substrate (1) Offer a diameter of 202 μm, depth be 24 μm of hole (14), hole (14) are through the silicon nitride layer (10) on silicon substrate (1) and upper Surface metal-layer (5) enters in silicon substrate (1), and the metal column (11) is stretched into hole (14)；Nitrogen on the downside of MEMS cantilever beams (6) SiClx layer (10) is provided with pull-down electrode (8), and silicon dioxide layer (15) is enclosed with pull-down electrode (8).
- 2. the silicon substrate SIW band metal column cantilever beam restructural bandpass filters of internet of things oriented as claimed in claim 1, it is special Sign is：Also include exchanging structure (3), exchanging structure (3) is to be carried between microstrip line (4) and SIW bandpass filters to turn Structure is changed, exchanging structure (3) one end is connected with microstrip line (4), and exchanging structure (3) other end is connected with SIW bandpass filters, is turned Binding structure (3) is equal with microstrip line (4) width with the port that microstrip line (4) connects, exchanging structure (3) and SIW bandpass filters The width of the port of connection is using the width with SIW bandpass filter characteristic impedance value identical microstrip lines.
- 3. the silicon substrate SIW band metal column cantilever beam restructural bandpass filters of internet of things oriented as claimed in claim 2, it is special Sign is：Exchanging structure (3) length is a quarter of the wavelength at SIW bandpass filter centre frequencies.
- 4. the silicon substrate SIW band metal column cantilever beam restructural bandpass filters of internet of things oriented as claimed in claim 2, it is special Sign is：The characteristic impedance of the microstrip line (4) is 50 ohm.
- 5. the silicon substrate SIW band metal column cantilever beam restructural bandpass filters of internet of things oriented as claimed in claim 1, it is special Sign is：The anchor area (7) is made of polysilicon.
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| CN201710425751.1A CN107394323B (en) | 2017-06-08 | 2017-06-08 | The internet of things oriented silicon substrate SIW band restructural bandpass filter of metal column cantilever beam |
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| CN201710425751.1A CN107394323B (en) | 2017-06-08 | 2017-06-08 | The internet of things oriented silicon substrate SIW band restructural bandpass filter of metal column cantilever beam |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| RU2686486C1 (en) * | 2018-04-25 | 2019-04-29 | Акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (АО "Российские космические системы") | Microwave filter based on waveguide integrated into substrate and method of its manufacturing |
| CN113366697A (en) * | 2019-03-14 | 2021-09-07 | 株式会社藤仓 | Filter device |
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| RU2686486C1 (en) * | 2018-04-25 | 2019-04-29 | Акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (АО "Российские космические системы") | Microwave filter based on waveguide integrated into substrate and method of its manufacturing |
| CN113366697A (en) * | 2019-03-14 | 2021-09-07 | 株式会社藤仓 | Filter device |
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