CN107394322B - The restructural SIW bandpass filter of the silicon substrate clamped beam of internet of things oriented - Google Patents
The restructural SIW bandpass filter of the silicon substrate clamped beam of internet of things oriented Download PDFInfo
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- CN107394322B CN107394322B CN201710425729.7A CN201710425729A CN107394322B CN 107394322 B CN107394322 B CN 107394322B CN 201710425729 A CN201710425729 A CN 201710425729A CN 107394322 B CN107394322 B CN 107394322B
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- siw
- bandpass filter
- silicon substrate
- mems
- clamped beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
- H01P1/2088—Integrated in a substrate
Abstract
The invention discloses a kind of restructural SIW bandpass filters of the silicon substrate clamped beam of internet of things oriented, including SIW bandpass filter, exchanging structure (3) and MEMS fixed beam structure.SIW bandpass filter includes mutual cascade SIW resonant cavity (9), there is coupling window (14) between adjacent SIW resonant cavity, and MEMS fixed beam structure is set in coupling window.In some circuits for specifically needing to control passive filter passband central frequency frequent switching, the present invention avoids the need for the problem of going control circuit by increase filter quantity by MEMS fixed beam structure well, and the smaller normal work that also will not influence circuit substantially of voltage required for the closure of MEMS fixed beam structure, can be effectively reduced the power consumption of circuit control.The conversion of quick DOWN state and UP state may be implemented in MEMS clamped beam (6), can effectively realize the control in microwave circuit to filter filtering range.
Description
Technical field
The invention belongs to the technical fields of microelectromechanical systems, and in particular to a kind of silicon substrate clamped beam of internet of things oriented
Restructural SIW bandpass filter.
Background technique
Today's society Internet of Things Network Communication is more and more flourishing, and microwave and millimeter wave circuit system is Internet of Things network communication system
Important component, function becomes increasingly complex, electrical performance indexes are higher and higher, its weight is then increasingly lighter at the same time, volume
It is smaller and smaller；Whole system develops to lightweight, miniaturization, multifunctionality, high reliability and inexpensive direction rapidly.Gao Xing
Energy, high finished product rate, the microwave and millimeter wave technology of low cost rise in developing commercialized inexpensive microwave and millimeter wave broadband system
Very important effect, filter is as the Primary Component in Internet of Things Network Communication, and the Study of Lifting of performance is also increasingly
To the attention of domestic and foreign scholars.
The basic conception of substrate integration wave-guide (SIW) is the metal plate up and down and two-row spacing certain distance using substrate
Metal aperture constitutes the metallic walls of waveguide, since the adjacent pitch of holes of every row's metal aperture is much smaller than wavelength, by slot leakage
Energy very little, this is equivalent to inside and is filled with the rectangular waveguide of medium, so the structure that can be realized with rectangle common waveguide
It can be realized with substrate integration wave-guide.In addition, with silicon make SIW device can easily with other circuits or silicon
Base device is integrated.Since the dielectric constant of silicon is relative to the dielectric constant of PCB (printed circuit board) or LTCC substrate material height
Very much, so the SIW of silicon substrate can be on the device of high frequency, and the volume of device can effectively be reduced.
The movable structure as composed by MEMS clamped beam is typical switch element, and MEMS clamped beam hardly consumes direct current
Electric current, so its advantages of there are also low-power consumption while possessing high reliability and the brilliant linearity.MEMS clamped beam is answered
It uses in the restructural research of filter, can not only relatively easily realize the restructural target of filter, also easy and silicon substrate
MEMS technology combines.
Summary of the invention
The purpose of the present invention is to provide a kind of restructural SIW bandpass filter of the silicon substrate clamped beam of internet of things oriented,
MEMS clamped beam switch is added on the basis of SIW bandpass filter, it, can to achieve the purpose that control SIW bandpass filter on-off
To control the trend of work of filter.
The present invention solves its technical problem and is achieved through the following technical solutions:
A kind of restructural SIW bandpass filter of the silicon substrate clamped beam of internet of things oriented, including SIW bandpass filter and MEMS
Fixed beam structure；
The SIW bandpass filter includes SIW structure, and SIW structure includes the silicon substrate as medium, the upper table of silicon substrate
Face and lower surface are plated with metal layer, and metal throuth hole one, and adjacent metal through-hole are equipped in the silicon substrate and metal layer
The length of metal throuth hole one diameter of the distance between one central axis less than twice, positioned at the gold of silicon substrate upper and lower surfaces
It is symmetrically parallel to belong to layer；The SIW structure is divided into several SIW resonant cavities by metal throuth hole two, at metal throuth hole two
Between two rows of symmetrical parallel metal throuth holes one, and metal throuth hole two is identical as one structure of metal throuth hole, adjacent SIW resonance
There is coupling window in the part not occupied by metal throuth hole two between chamber；
The metal layer for coupling window present position both ends is removed, retains the metal layer in the middle part of coupling window present position and makees
For lower metal layer, and anchoring area is respectively set after removing the metal layer at coupling window both ends in the metal layer, anchoring area and silicon substrate are solid
Fixed connection；The MEMS fixed beam structure is set in coupling window, and the MEMS fixed beam structure includes MEMS clamped beam,
MEMS clamped beam is erected in anchoring area, and the silicon substrate on the downside of MEMS clamped beam is equipped with pull-down electrode, and pull-down electrode is located at
Between anchoring area and lower metal layer, pull-down electrode is enclosed with silicon nitride layer, is enclosed with silicon dioxide layer on lower metal layer.
It further, further include exchanging structure, exchanging structure is that load turns between microstrip line and SIW bandpass filter
Change structure, exchanging structure one end is connect with microstrip line, and the exchanging structure other end is connect with SIW bandpass filter, exchanging structure with
The port of microstrip line connection is equal with micro belt line width, and the width for the port that exchanging structure is connect with SIW bandpass filter uses
Be the width for being worth identical microstrip line with SIW bandpass filter characteristic impedance.
Further, the exchanging structure length is a quarter of the wavelength at SIW bandpass filter centre frequency.
Further, the characteristic impedance of the microstrip line is 50 ohm.
Further, the anchoring area is made of polysilicon.
Further, the metal throuth hole one is solid metal column.
The invention has the benefit that
The regulation of the restructural SIW band-pass filter range of the silicon substrate clamped beam of internet of things oriented of the present invention is to rely on
What MEMS clamped beam carried out, in some circuits for specifically needing to control passive filter passband central frequency frequent switching,
If applying heretofore described restructural SIW bandpass filter in the circuit, it is only necessary to by controlling MEMS clamped beam
State can change the centre frequency of filter passband, achieve the purpose that switching filter passband central frequency, this is just very
Good avoiding needs the problem of going control circuit by the filter quantity for increasing different center frequency in circuit, and
The smaller normal work that also will not influence circuit substantially of voltage required for the closure of MEMS clamped beam, can be effectively reduced electricity
The conversion of quick DOWN state and UP state may be implemented in the power consumption of road control, MEMS clamped beam, can effectively realize microwave electricity
To the control of filter filtering range in road.
Detailed description of the invention
Fig. 1 is the structure schematic top plan view of the restructural SIW bandpass filter of silicon substrate clamped beam of internet of things oriented of the present invention；
Fig. 2 be in Fig. 1 B-B ' to diagrammatic cross-section；
Fig. 3 be in Fig. 1 A-A ' to diagrammatic cross-section.
Description of symbols
1- silicon substrate, 2- metal throuth hole one, 3- exchanging structure, 4- microstrip line, 5- metal layer, 6-MEMS clamped beam, 7- anchor
Area, 8- pull-down electrode, 9-SIW resonant cavity, 10- silicon nitride layer, 11- metal throuth hole two, 12- lower metal layer, 13- silica
Layer, 14- couple window.
Specific embodiment
Below by specific embodiment, the invention will be further described, and it is not limit that following embodiment, which is descriptive,
Qualitatively, this does not limit the scope of protection of the present invention.
The restructural SIW bandpass filter of the silicon substrate clamped beam of internet of things oriented, including SIW bandpass filter, exchanging structure 3
With MEMS fixed beam structure.
As shown in Figure 1, SIW bandpass filter includes SIW structure, SIW structure includes the silicon substrate 1 as medium, silicon lining
The upper and lower surfaces at bottom 1 are plated with metal layer 5, are equipped with metal throuth hole 1 in silicon substrate 1 and metal layer 5, and adjacent
The length of metal throuth hole one 2 diameter of the distance between one 2 central axis of metal throuth hole less than twice is electromagnetism in order to prevent in this way
Wave leakage, while the metal layer 5 for being located at 1 upper and lower surfaces of silicon substrate is symmetrically parallel.In Fig. 1, SIW structure passes through gold
Belong to through-hole 2 11 and be divided into four SIW resonant cavities 9, metal throuth hole 2 11 is between two rows of symmetrical parallel metal throuth holes 1.
In Fig. 1, metal throuth hole 2 11 has five column, and metal throuth hole 2 11 is identical as one 2 structure of metal throuth hole, adjacent SIW resonant cavity 9 it
Between the part that is not occupied by metal throuth hole 2 11 there is coupling window 14.
As shown in Fig. 2, the metal layer 5 for coupling 14 present position both ends of window is removed, retain position locating for coupling window 14
The metal layer 5 for setting middle part is used as lower metal layer 12, and sets respectively after removing the metal layer for coupling 14 both ends of window in metal layer 5
The anchoring area 7 of polysilicon production is set, anchoring area 7 is fixedly connected with silicon substrate 1.MEMS fixed beam structure is set in coupling window 14,
MEMS fixed beam structure includes MEMS clamped beam 6, and MEMS clamped beam 6 is erected in anchoring area 7, positioned at 6 downside of MEMS clamped beam
Silicon substrate 1 is equipped with pull-down electrode 8, and for pull-down electrode 8 between anchoring area 7 and lower metal layer 12, pull-down electrode 8 is enclosed with nitridation
Silicon layer 10, the purpose for wrapping up silicon nitride layer are that MEMS clamped beam 6 and pull-down electrode 8 directly contact in order to prevent, because if
The two directly contacts, and the two potential can be made identical.It is enclosed with silicon dioxide layer 13 on lower metal layer 12, wraps up silicon dioxide layer master
If MEMS clamped beam 6 is directly contacted in pull-down state with pull-down electrode 8 in order to prevent, because if the two directly contacts,
The two potential can be made identical, MEMS clamped beam 6 cannot maintain its pull-down state again.
Exchanging structure 3 is transformational structure of the load between microstrip line 4 and SIW bandpass filter, 3 one end of exchanging structure with
Microstrip line 4 connects, and 3 other end of exchanging structure is connect with SIW bandpass filter.Port that exchanging structure 3 is connect with microstrip line 4 with
4 width of microstrip line is equal, and the characteristic impedance of microstrip line 4 is 50 ohm.The port that exchanging structure 3 is connect with SIW bandpass filter
Width using the width for being worth identical microstrip line with SIW bandpass filter characteristic impedance.3 length of exchanging structure is SIW
The a quarter of wavelength at bandpass filter centre frequency.
MEMS clamped beam 6 is outstanding by the support of anchoring area 7 in the restructural SIW bandpass filter of silicon substrate clamped beam in the present invention
It floats on the silicon substrate 1 that metal layer 5 extends out, this is typical MEMS fixed beam structure, below MEMS clamped beam 6
Lower metal layer 12 is covered by silicon dioxide layer 13.The width and length of reasonable design MEMS fixed beam structure make MEMS clamped
Beam 6 by the effect of pull-down electrode 8 when being pulled down in silicon dioxide layer 13, to point of capacitor and inductance between SIW resonant cavity 9
Cloth has an impact, and the change of the value of capacitor and inductance can make the resonance frequency of resonant cavity 9 change, so that band logical is filtered
The passband central frequency position of wave device changes, and when MEMS clamped beam 6 is not pulled down, the working band of filter script is not
It will receive influence, therefore the restructural of bandpass filter can be realized by the state of control MEMS clamped beam 6.
The preparation method of the restructural SIW bandpass filter of silicon substrate clamped beam including the following steps:
(1) prepare high resistance type silicon substrate 1, with a thickness of 400 μm；
(2) high resistance type silicon substrate 1 is punched using laser, until punching completely；
(3) silicon substrate of punching 1 is carried out gold-plated, it is logical forms metal throuth hole 1 and metal in the through-hole wall of silicon substrate 1
Hole 2 11, metal throuth hole 1 and 2 11 diameter of metal throuth hole are 180 μm, and 1 upper and lower surface of silicon substrate is respectively provided with one layer of thin gold
Belong to layer 5, with a thickness of 3 μm；
(4) layer photoresist is coated in 5 specific position of metal layer, what which referred to is exactly microstrip line 4 and Change-over knot
Position where structure 3, photoetching do not coat the metal layer of photoresist and the light of removal microstrip line 4 and 3 position of transformational structure
Photoresist forms microstrip line 4 and exchanging structure 3；
(5) layer photoresist is all coated around the position for needing to make pull-down electrode 8, removal needs to make on this basis
Make the photoresist of 6 electrode Board position of MEMS clamped beam, photoresist here is just coated in this step 5.Then one is deposited
Layer Al, the Al on photoresist and photoresist that those of removal 8 surrounding residue of pull-down electrode is removed not yet, forms drop-down
Electrode 8 and clamped beam lower metal layer 12, pull-down electrode with a thickness of 2 μm；
(6) layer of silicon dioxide is deposited above the lower metal layer 12 of MEMS clamped beam 6, with a thickness of 1 μm；
(7) deposit silicon nitride forms the coating silicon nitride layer 10 of pull-down electrode 8, in pull-down electrode 8 with a thickness of 1 μ
m；
(8) it is etched at anchoring area 7 in the position deposit polycrystalline silicon of production anchoring area 7 by dry etching technology using CVD technology
Polysilicon, retain MEMS clamped beam 67 position of anchoring area polysilicon, polysilicon anchoring area is with a thickness of 4 μm；
(9) PMGI sacrificial layer is formed in the position for needing to make MEMS clamped beam 6 by spin coating mode, in PMGI sacrificial layer
The other positions that surrounding removes anchoring area 7 coat photoresist；
(10) evaporation side grows Au layers on PMGI sacrificial layer and in photoresist and anchoring area 7, and Au layers can connect with anchoring area 7
And cover PMGI sacrificial layer and photoresist layer；
(11) the Au layer above photoresist is all etched, only retains the Au layer above the position for forming MEMS clamped beam 6,
The layer gold width remained is 200 μm, and length is 400 μm, then removes what step 9 coated in the middle, in addition to PMGI sacrificial layer
The photoresist all coated with all places other than anchoring area 7；
(12) PMGI sacrificial layer is discharged, the Au layer being retained will form the MEMS clamped beam 6 of suspension, MEMS clamped beam
6 width is 200 μm, and length is 400 μm.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (5)
1. a kind of restructural SIW bandpass filter of the silicon substrate clamped beam of internet of things oriented, it is characterised in that: filtered including SIW band logical
Wave device and MEMS fixed beam structure；
The SIW bandpass filter includes SIW structure, and SIW structure includes the silicon substrate (1) as medium, silicon substrate (1) it is upper
Surface and lower surface are plated with metal layer (5), are equipped with metal throuth hole one (2) in the silicon substrate (1) and metal layer (5),
And the length of metal throuth hole one (2) diameter of the distance between adjacent metal through-hole one (2) central axis less than twice, it is located at silicon and serves as a contrast
The metal layer (5) of bottom (1) upper and lower surfaces is symmetrically parallel；The SIW structure is divided by metal throuth hole two (11)
At several SIW resonant cavities (9), metal throuth hole two (11) is between two rows of symmetrical parallel metal throuth holes one (2), and metal
Through-hole two (11) is identical as metal throuth hole one (2) structure, is not accounted for by metal throuth hole two (11) between adjacent SIW resonant cavity (9)
According to part exist coupling window (14)；
The metal layer (5) that window (14) present position both ends will be coupled removes, and retains in the middle part of coupling window (14) present position
Metal layer (5) is used as lower metal layer (12), and sets respectively after removing the metal layer for coupling window (14) both ends in metal layer (5)
It sets anchoring area (7), anchoring area (7) is fixedly connected with silicon substrate (1)；The MEMS fixed beam structure is set in coupling window (14),
The MEMS fixed beam structure includes MEMS clamped beam (6), and MEMS clamped beam (6) is erected on anchoring area (7), and it is clamped to be located at MEMS
Silicon substrate (1) on the downside of beam (6) is equipped with pull-down electrode (8), pull-down electrode (8) be located at anchoring area (7) and lower metal layer (12) it
Between, pull-down electrode (8) is enclosed with silicon nitride layer (10), and silicon dioxide layer (13) are enclosed on lower metal layer (12)；
MEMS clamped beam (6) is suspended in by the support of anchoring area (7) from metal in the restructural SIW bandpass filter of silicon substrate clamped beam
On layer (5) silicon substrate (1) for extending out, the width and length of MEMS fixed beam structure make MEMS clamped beam (6) by
When pulling down on silicon dioxide layer (13) to pull-down electrode (8) effect, to point of capacitor and inductance between SIW resonant cavity (9)
Cloth has an impact, and the change of the value of capacitor and inductance can make the resonance frequency of resonant cavity (9) change, so that band logical
The passband central frequency position of filter changes, the work frequency of bandpass filter when MEMS clamped beam (6) is not pulled down
Band is unaffected, therefore can realize the restructural of bandpass filter by the state of control MEMS clamped beam (6).
2. the restructural SIW bandpass filter of the silicon substrate clamped beam of internet of things oriented as described in claim 1, it is characterised in that:
It further include exchanging structure (3), exchanging structure (3) is transformational structure of the load between microstrip line (4) and SIW bandpass filter,
Exchanging structure (3) one end is connect with microstrip line (4), and exchanging structure (3) other end is connect with SIW bandpass filter, exchanging structure
(3) equal with microstrip line (4) width with the port of microstrip line (4) connection, what exchanging structure (3) was connect with SIW bandpass filter
The width of port is using the width for being worth identical microstrip line with SIW bandpass filter characteristic impedance.
3. the restructural SIW bandpass filter of the silicon substrate clamped beam of internet of things oriented as claimed in claim 2, it is characterised in that:
Exchanging structure (3) length is a quarter of the wavelength at SIW bandpass filter centre frequency.
4. the restructural SIW bandpass filter of the silicon substrate clamped beam of internet of things oriented as claimed in claim 2, it is characterised in that:
The characteristic impedance of the microstrip line (4) is 50 ohm.
5. the restructural SIW bandpass filter of the silicon substrate clamped beam of internet of things oriented as described in claim 1, it is characterised in that:
The anchoring area (7) is made of polysilicon.
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| CN201710425729.7A CN107394322B (en) | 2017-06-08 | 2017-06-08 | The restructural SIW bandpass filter of the silicon substrate clamped beam of internet of things oriented |
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| CN107394322B true CN107394322B (en) | 2019-06-21 |
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| CN110336105B (en) * | 2019-06-05 | 2020-08-04 | 华中科技大学 | SIW band-pass filter loaded with square-disc SSPP structure |
| FR3113197B1 (en) | 2020-07-28 | 2022-08-19 | Thales Sa | Process for manufacturing a component in SIW technology (waveguide integrated into the substrate); components and circuits obtained by the implementation of said method. |
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| CN103985608B (en) * | 2014-05-29 | 2017-01-18 | 电子科技大学 | MEMS capacitor switch with PN junction |
| CN105161798B (en) * | 2015-07-01 | 2017-12-26 | 东南大学 | The SCF and preparation method of silicon substrate low-leakage current cantilever beam grid |
| CN105044452B (en) * | 2015-07-01 | 2017-10-10 | 东南大学 | Based on GaAs base low-leakage current double cantilever beam switching frequency detectors |
| CN106252800B (en) * | 2016-07-18 | 2019-03-12 | 中国科学院微电子研究所 | Substrate integral wave guide filter of regulable center frequency and preparation method thereof |
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