CN103985608B - MEMS capacitor switch with PN junction - Google Patents
MEMS capacitor switch with PN junction Download PDFInfo
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- CN103985608B CN103985608B CN201410234153.2A CN201410234153A CN103985608B CN 103985608 B CN103985608 B CN 103985608B CN 201410234153 A CN201410234153 A CN 201410234153A CN 103985608 B CN103985608 B CN 103985608B
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Abstract
The invention discloses an MEMS capacitor switch with a PN junction, and belongs to the technical field of electronics. The MEMS capacitor switch is characterized in that a longitudinal PN junction structure is additionally arranged between an upper drive electrode and a lower drive electrode of the MEMS capacitor switch; when the switch is in the Up state, drive voltage is not applied between the upper drive electrode and the lower drive electrode, and an electric contact point does not make contact with a signal line; when the switch is in the Down state, the upper drive electrode is pulled downwards under the action of the drive voltage, the electric contact point makes contact with the signal line, and meanwhile the longitudinal semiconductor PN junction is in the reversal of biasing state. When the MEMS capacitor switch with the PN junction works in the Down state, charge injection and accumulation cannot be generated, the bonding failure problem of the upper drive electrode and the lower drive electrode is solved, the MEMS capacitor switch is made to work under the sufficient drive voltage, it can be guaranteed that the electric contact point tightly makes contact with the signal line, and eventually reliability and stability of the MEMS capacitor switch can be improved.
Description
Technical field
The invention belongs to electronic science and technology field, it is related to MEMS (mems) and semiconductor technology, specifically refers to
A kind of mems capacitance switch with pn-junction.
Technical background
Switch is the basic element of character in radio frequency (rf) and microwave telecommunication system, and radio-frequency micro electromechanical (rf mems) switch is being penetrated
Frequency and microwave components level and system-level have very big application space.Can be opened with radio-frequency micro electromechanical (rf mems) in component level
Pass construction voltage controlled oscillator, wave filter (capacitance switch, inductance) and phase shifter etc. are modern radars and communication system is indispensable
Element.It is little, slotting that radio-frequency micro electromechanical (rf mems) switch has DC power compared to traditional fet and pin diode switch
Enter to be lost that low, isolation is high, intermodulation distortion is little, working band width and low cost it is easy to integrated the features such as.
Existing mems capacitance switch, the drive electrode structure of its mems electric capacity mainly includes contact pull-down structure (such as
Shown in Fig. 1) and two kinds of contactless drop-down (as shown in Figure 2).In contact shown in Fig. 1 drop-down drive electrode structure, upper
One layer of insulating medium layer 4 (arbitrary drive electrode surface can be deposited on), direct current biasing driving voltage is deposited between lower drive electrode
After putting between upper and lower drive electrode, upper and lower drive electrode produces electrostatic force, and electrostatic force is by (the i.e. drop-down drive of upper drive electrode 3
Moving electrode) to leave behind so that the electrical pickoff 2 on cantilever beam contacts generation radio-frequency (RF) switch characteristic with holding wire 7, layer insulation simultaneously is situated between
The direct-current short circuit that matter layer 4 is prevented from upper and lower drive electrode directly contact and leads to, upper drive electrode 3 left behind by electrostatic force after with
Lower drive electrode 5 and insulating medium layer 4 constitute electric capacity.The mems capacitance switch of contact pull-down structure applies directly long-time
Stream offset driving voltage after can lead in insulating medium layer 4 produce electric charge injection and accumulative effect, final insulating medium layer 4 due to
Accumulating multi-charge leads to switch cannot discharge i.e. caking property inefficacy.In contactless drop-down drive electrode structure shown in Fig. 2,
After direct current biasing driving voltage puts between upper and lower drive electrode, upper and lower drive electrode produces electrostatic force, and electrostatic force is by upper drive
Moving electrode 3 (i.e. drop-down drive electrode) is left behind so that the electrical pickoff 2 on cantilever beam contacts generation radio-frequency (RF) switch with holding wire 7
Characteristic, but when electrical pickoff 2 is contacted with holding wire 7, between upper and lower drive electrode, still keep certain gap 4 ' directly not connect
Touch, reach the effect avoiding the injection of medium layer charge, but due to excessive drop-down electrostatic force must be avoided to make upper/lower electrode straight
Contact leads to direct-current short circuit, therefore cannot apply larger electrostatic force, thus electrical pickoff 2 can be led to contact not with holding wire 7
Enough tight, lead to the radio-frequency performance switching to decline (series impedance that is as larger in Insertion Loss, introducing is excessively high).
Content of the invention
In order to avoid mems capacitance switch works long hours the electric charge injection producing in down state and accumulative effect leads to
Caking property lost efficacy, simultaneously in order to mems capacitance switch can be worked under enough driving voltages and ensure that mems electric capacity is opened
The radio-frequency performance closed, the present invention provides a kind of mems capacitance switch with pn-junction.The electricity of driving up and down of this mems capacitance switch
There is a semiconductor pn junction between pole, and during drawing under the electrodes, this pn-junction is operated in reverse-biased and forms reverse-biased two poles
Pipe similar effect, can either avoid electric charge injection mems capacitance switch can be enable to work under enough driving voltages again, from
And ensure that the close contact of electrical pickoff and holding wire, finally can improve the reliability of mems capacitance switch and stable
Property.
Technical solution of the present invention is as follows:
A kind of mems capacitance switch with pn-junction, including cantilever beam 1 and the holding wire 7 being arranged at substrate base 8 surface,
One end of cantilever beam 1 is fixed on substrate base 8 by anchor point 6, and the other end of cantilever beam 1 is provided with two segment signal lines
The electrical pickoff 2 that 7 couple together；Substrate base 8 surface region between holding wire 7 and anchor point 6 is provided with lower drive electrode
5, the region between the corresponding anchor point 6 in cantilever beam 1 and electrical pickoff 2 is provided with drive electrode 3, in upper and lower drive electrode
Between exist a longitudinal semiconductor pn junction being made up of p-type semiconductor 4-1 and n-type semiconductor 4-2, described longitudinal quasiconductor pn
Knot be deposited on drive electrode 3 surface or be deposited on lower drive electrode 5 surface but area be less than upper drive electrode 3 or lower drive electricity
The area of pole 5.
In the up state of mems capacitance switch, do not apply direct current biasing driving voltage, upper driving between upper and lower drive electrode
Electrode does not produce downdraw process, and electrical pickoff 2 is not contacted with holding wire 7；In the down state of mems capacitance switch, due to upper and lower
It is applied with direct current biasing driving voltage, upper drive electrode 3 is pulled down into so that making electrical contact with electrostatic force between drive electrode
Point 2 is in close contact with holding wire 7 and couples together two segment signal lines 7, and longitudinal semiconductor pn junction is in reverse-biased, that is, simultaneously
P-type semiconductor 4-1 and low voltage drive contact electrode in longitudinal semiconductor pn junction, and n-type semiconductor 4-2 and high voltage drive
Contact electrode.
A kind of mems capacitance switch with pn-junction, including clamped beam 9 and the holding wire 7 being arranged at substrate base 8 surface,
The two ends of clamped beam 9 are fixed on substrate base 8 by an anchor point 6 respectively, and clamped beam 9 centre position is provided with and believes
The electrical pickoff 2 of number line 7 contact；8 two surface regions of substrate base between holding wire 7 and two anchor points 6 are respectively provided with
There is a lower drive electrode 5, two regions between corresponding two anchor points 6 in clamped beam 9 and electrical pickoff 2 are respectively provided with
Have a upper drive electrode 3, two to upper and lower drive electrode between be respectively present one by p-type semiconductor 4-1 and n-type semiconductor
Longitudinal semiconductor pn junction that 4-2 is constituted, described longitudinal semiconductor pn junction is deposited on drive electrode 3 surface or is deposited on lower driving
Electrode 5 surface but area are less than the area of upper drive electrode 3 or lower drive electrode 5.
In the up state of mems capacitance switch, do not apply direct current biasing driving voltage, upper driving between upper and lower drive electrode
Electrode does not produce downdraw process, and electrical pickoff 2 is not contacted with holding wire 7；In the down state of mems capacitance switch, due to upper and lower
It is applied with direct current biasing driving voltage, two upper drive electrodes 3 are pulled down into making electric under electrostatic force between drive electrode
Contact point 2 is in close contact with holding wire 7, and longitudinal semiconductor pn junction is in reverse-biased simultaneously, i.e. p-type in longitudinal semiconductor pn junction
Quasiconductor 4-1 and low voltage drive contact electrode, and n-type semiconductor 4-2 and high voltage drive contact electrode.
The operation principle of the present invention is () taking the mems capacitance switch with cantilever beam as a example:
What the present invention provided has the mems capacitance switch of pn-junction when up state (switch off state), upper and lower drive electrode
Between do not apply direct current biasing driving voltage, maintain a certain distance between upper drive electrode and lower drive electrode, electrical pickoff 2
Do not contact between holding wire 7, now the radiofrequency signal on a segment signal line can not be transferred on another segment signal line.When upper
When applying direct current biasing driving voltage between lower drive electrode, because the electric field action generation one between upper and lower drive electrode is quiet
So that upper drive electrode is pulled down in the presence of electrostatic attraction, now mems capacitance switch is in down state and (opens electric attraction
Close closure state), it is in close contact between electrical pickoff 2 and holding wire 7 and two segment signal lines are coupled together, ultimately result in one section
Radio signal transmission on holding wire is on another segment signal line.
Be applied to direct current biasing driving voltage between upper and lower drive electrode it suffices that:
Wherein k is the coefficient of elasticity that driving pole plate and support beam form structure, ε0For permittivity of vacuum, a is pole up and down
Plate suqare, h is the initial distance between two electrodes.
The electrostatic attraction (electric field force) that upper drive electrode is subject to is:
Wherein g is pole inter-plate gap.For breaker in middle electrode structure of the present invention, pn-junction part, with non-pn-junction portion gap
Highly inconsistent, then preferably calculate electrostatic force respectively.Wherein pn-junction portion gap height, is that p-type semiconductor thickness adds between air
G' in gap thickness, such as Fig. 3 and Fig. 4.
What the present invention provided the have mems capacitance switch of pn-junction is when down state (switch closed condition) it shall be guaranteed that vertical
All contact with upper and lower drive electrode to pn-junction, and longitudinal pn-junction is in reverse-biased, be i.e. p-type semiconductor in longitudinal semiconductor pn junction
4-1 and low voltage drive contact electrode, and n-type semiconductor 4-2 and high voltage drive contact electrode, now longitudinal quasiconductor
Pn-junction, similar to a back biased diode, will not produce electric charge injection and accumulative effect, thus avoid existing mems electric capacity and open
Close the bonding failure problem of drive electrode up and down existing.During down state, upper bottom crown is in close contact with pn-junction, due to longitudinal pn-junction
Reverse-biased, yet suffer from DC voltage difference between upper/lower electrode, simultaneously because longitudinal pn-junction area be less than drive electrode area so that
Electrostatic attraction is still suffered from, this electrostatic attraction only needs to maintain between the residual area after drive electrode removes longitudinal pn-junction area up and down
Switch closure (down state), that is, this electrostatic attraction need to be more than the restoring force f of cantilever beam 1r.Wherein, restoring force frSimple mould
Type is:
fr=ke(g0-g)
Wherein keFor considering the equivalent elastic coefficient after stretching, g0For electrode gap during up state.Although to be in close contact
For switch, also do not understood in detail by the mechanical return force that the absorption affinity between metal and dielectric layer and repulsive force produce,
But still assume that t in calculatingdFor pn-junction thickness, and g=td.
Now during pull-down state, the residual area outside removing pn-junction area on electrode is a'.Now electrostatic force formula is
Switch remainder parameter to be calculated as switch designs calculating process under normal circumstances identical.
In sum, the invention has the beneficial effects as follows:
The mems capacitance switch with pn-junction that the present invention provides, is less than due to there is area between upper and lower drive electrode
The pn-junction of drive electrode area, when applying direct current biasing driving voltage between upper and lower drive electrode, between upper and lower drive electrode
It is obtained in that upper drive electrode is pulled down by enough electrostatic force, thus ensureing the close contact of electrical pickoff and holding wire；With
When, in the down state of mems capacitance switch, the longitudinal pn-junction between upper and lower drive electrode is in reverse-biased so as to produce similar
In the characteristic of back biased diode, electric charge injection and accumulation phenomenon will not be produced, thus the bonding avoiding upper and lower drive electrode is lost
Effect problem.Therefore, the mems capacitance switch with pn-junction that the present invention provides, compares and existing mems capacitance switch, can
Improve its reliability and stability.
Brief description
Fig. 1 is the mems capacitance switch structural representation that existing contact drives pull-down electrode structure.
Fig. 2 is the existing contactless mems capacitance switch structural representation driving pull-down electrode structure.
(pn-junction is deposited on mems capacitance switch (cantilever beam structure) schematic diagram of pn-junction of having that Fig. 3 provides for the present invention
Upper drive electrode surface).
(pn-junction is deposited on mems capacitance switch (cantilever beam structure) schematic diagram of pn-junction of having that Fig. 4 provides for the present invention
Lower drive electrode surface).
The top view of the mems capacitance switch (cantilever beam structure) with pn-junction that Fig. 5 provides for the present invention.
(down state) electrode when Fig. 6 closes for the mems capacitance switch (cantilever beam structure) with pn-junction that the present invention provides
Part-structure schematic diagram.
Mems capacitance switch (fixed beam structure) schematic diagram with pn-junction that Fig. 7 provides for the present invention.
In Fig. 1 to Fig. 7,1 expression cantilever beam, 2 expression electrical pickofves, 3 represent upper drive electrode, and 4 represent insulating medium layers,
The mems capacitance switch of 4 ' expression contactless driving pull-down electrode structure gap between upper and lower drive electrode in down state,
4-1 represents p-type semiconductor, and 4-2 represents n-type semiconductor, and 5 represent lower drive electrode, 6 expression anchor points, 7 expression holding wires, 8 expressions
Substrate base, 9 expression clamped beams.
Specific embodiment
Below in conjunction with the accompanying drawings, the invention will be further described.As shown in Figures 3 to 5,
A kind of mems capacitance switch with pn-junction, including cantilever beam 1 and the holding wire 7 being arranged at substrate base 8 surface,
One end of cantilever beam 1 is fixed on substrate base 8 by anchor point 6, and the other end of cantilever beam 1 is provided with two segment signal lines
The electrical pickoff 2 that 7 couple together；Substrate base 8 surface region between holding wire 7 and anchor point 6 is provided with lower drive electrode
5, the region between the corresponding anchor point 6 in cantilever beam 1 and electrical pickoff 2 is provided with drive electrode 3, in upper and lower drive electrode
Between exist a longitudinal semiconductor pn junction being made up of p-type semiconductor 4-1 and n-type semiconductor 4-2, described longitudinal quasiconductor pn
Knot be deposited on drive electrode 3 surface or be deposited on lower drive electrode 5 surface but area be less than upper drive electrode 3 or lower drive electricity
The area of pole 5.
In the up state of mems capacitance switch, do not apply direct current biasing driving voltage, upper driving between upper and lower drive electrode
Electrode does not produce downdraw process, and electrical pickoff 2 is not contacted with holding wire 7；In the down state of mems capacitance switch, due to upper and lower
It is applied with direct current biasing driving voltage, upper drive electrode 3 is pulled down into so that making electrical contact with electrostatic force between drive electrode
Point 2 is in close contact with holding wire 7 and couples together two segment signal lines 7, and longitudinal semiconductor pn junction is in reverse-biased, that is, simultaneously
P-type semiconductor 4-1 and low voltage drive contact electrode in longitudinal semiconductor pn junction, and n-type semiconductor 4-2 and high voltage drive
Contact electrode.
Fig. 3 show mems capacitance switch (cantilever beam structure) schematic diagram with pn-junction of present invention offer, wherein pn
Knot is deposited on drive electrode surface；I.e. described longitudinal semiconductor pn junction be deposited on drive electrode 3 surface but area be less than upper
The area of drive electrode 3.
Fig. 4 show mems capacitance switch (cantilever beam structure) schematic diagram with pn-junction of present invention offer, wherein pn
Knot is deposited on lower drive electrode surface；I.e. described longitudinal semiconductor pn junction is deposited on lower drive electrode 5 surface but area is less than down
The area of drive electrode 5.
Fig. 5 opens the top view of (cantilever beam structure) for the mems electric capacity with pn-junction that the present invention provides.
Fig. 6 for the present invention provide have pn-junction mems capacitance switch drop-down when (down state) electrode partial structurtes show
It is intended to.It is the pn-junction being operated in reverse-biased between bottom crown 3,5 on electrode, between upper and lower drive electrode, have hanging part to produce
Continue pulling force, maintained switch closes, signal constant conduction.
The mems electric capacity with pn-junction that Fig. 7 present invention provides drives the schematic diagram of (fixed beam structure).
A kind of mems capacitance switch with pn-junction, including clamped beam 9 and the holding wire 7 being arranged at substrate base 8 surface,
The two ends of clamped beam 9 are fixed on substrate base 8 by an anchor point 6 respectively, and clamped beam 9 centre position is provided with and believes
The electrical pickoff 2 of number line 7 contact；8 two surface regions of substrate base between holding wire 7 and two anchor points 6 are respectively provided with
There is a lower drive electrode 5, two regions between corresponding two anchor points 6 in clamped beam 9 and electrical pickoff 2 are respectively provided with
Have a upper drive electrode 3, two to upper and lower drive electrode between be respectively present one by p-type semiconductor 4-1 and n-type semiconductor
Longitudinal semiconductor pn junction that 4-2 is constituted, described longitudinal semiconductor pn junction is deposited on drive electrode 3 surface or is deposited on lower driving
Electrode 5 surface but area are less than the area of upper drive electrode 3 or lower drive electrode 5.
In the up state of mems capacitance switch, do not apply direct current biasing driving voltage, upper driving between upper and lower drive electrode
Electrode does not produce downdraw process, and electrical pickoff 2 is not contacted with holding wire 7；In the down state of mems capacitance switch, due to upper and lower
It is applied with direct current biasing driving voltage, two upper drive electrodes 3 are pulled down into making electric under electrostatic force between drive electrode
Contact point 2 is in close contact with holding wire 7, and longitudinal semiconductor pn junction is in reverse-biased simultaneously, i.e. p-type in longitudinal semiconductor pn junction
Quasiconductor 4-1 and low voltage drive contact electrode, and n-type semiconductor 4-2 and high voltage drive contact electrode.
Claims (2)
1. a kind of mems capacitance switch with pn-junction, including cantilever beam (1) be arranged at two sections of substrate base (8) surface letters
Number line (7), one end of cantilever beam (1) is fixed on substrate base (8) by anchor point (6), and the other end of cantilever beam (1) is provided with
The electrical pickoff (2) that two segment signal lines (7) can be coupled together；Substrate base between holding wire (7) and anchor point (6)
(8) surface region is provided with lower drive electrode (5), between the corresponding anchor point (6) in cantilever beam (1) and electrical pickoff (2)
Region is provided with drive electrode (3), has one by p-type semiconductor (4-1) and n-type semiconductor between upper and lower drive electrode
(4-2) the longitudinal semiconductor pn junction constituting；
Under the off-state of mems capacitance switch, do not apply direct current biasing driving voltage, upper drive between upper and lower drive electrode
Moving electrode does not produce downdraw process, and electrical pickoff (2) is not contacted with two segment signal lines (7)；Closure in mems capacitance switch
Under state, due to being applied with direct current biasing driving voltage between upper and lower drive electrode, upper drive electrode (3) is under electrostatic force
It is pulled down into so that electrical pickoff (2) is in close contact with holding wire (7) and couples together two segment signal lines (7), longitudinally partly simultaneously
Conductor pn-junction is in reverse-biased, i.e. p-type semiconductor (4-1) and low voltage drive contact electrode in longitudinal semiconductor pn junction,
And n-type semiconductor (4-2) and high voltage drive contact electrode；
Described longitudinal semiconductor pn junction is deposited on drive electrode (3) surface or is deposited on lower drive electrode (5) surface but area
Area less than upper drive electrode (3) or lower drive electrode (5).
2. a kind of mems capacitance switch with pn-junction, including clamped beam (9) with the holding wire that is arranged at substrate base (8) surface
(7), the two ends of clamped beam (9) are fixed on substrate base (8) by an anchor point (6) respectively, and clamped beam (9) interposition installs
It is equipped with the electrical pickoff (2) that can contact with holding wire (7)；Substrate base between holding wire (7) and two anchor points (6)
(8) two surface regions are respectively arranged with a lower drive electrode (5), corresponding two anchor points (6) in clamped beam (9) and electricity
Two regions between contact point (2) are respectively arranged with a upper drive electrode (3), two to upper and lower drive electrode between respectively
There is a longitudinal semiconductor pn junction being made up of p-type semiconductor (4 1) and n-type semiconductor (4 2)；
Under the off-state of mems capacitance switch, do not apply direct current biasing driving voltage, upper drive between upper and lower drive electrode
Moving electrode does not produce downdraw process, and electrical pickoff (2) is not contacted with holding wire (7)；Closure state in mems capacitance switch
Under, due to being applied with direct current biasing driving voltage between upper and lower drive electrode, two upper drive electrodes (3) are under electrostatic force
It is pulled down into so that electrical pickoff (2) is in close contact with holding wire (7), longitudinal semiconductor pn junction is in reverse-biased simultaneously, that is, indulge
P-type semiconductor (4-1) and low voltage drive contact electrode in semiconductor pn junction, and n-type semiconductor (4-2) is driven with high voltage
Moving electrode contacts；
Described longitudinal semiconductor pn junction is deposited on drive electrode (3) surface or is deposited on lower drive electrode (5) surface but area
Area less than upper drive electrode (3) or lower drive electrode (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410234153.2A CN103985608B (en) | 2014-05-29 | 2014-05-29 | MEMS capacitor switch with PN junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410234153.2A CN103985608B (en) | 2014-05-29 | 2014-05-29 | MEMS capacitor switch with PN junction |
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| CN103985608A CN103985608A (en) | 2014-08-13 |
| CN103985608B true CN103985608B (en) | 2017-01-18 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104992940B (en) * | 2015-07-01 | 2018-02-23 | 东南大学 | Gallium nitride base low-leakage current cantilever beam field-effect transistor transmission gate and preparation method |
| CN105161798B (en) * | 2015-07-01 | 2017-12-26 | 东南大学 | The SCF and preparation method of silicon substrate low-leakage current cantilever beam grid |
| CN107425249B (en) * | 2017-06-08 | 2020-02-18 | 东南大学 | Silicon-based cantilever beam reconfigurable SIW band-pass filter for Internet of things |
| CN107394322B (en) * | 2017-06-08 | 2019-06-21 | 东南大学 | The restructural SIW bandpass filter of the silicon substrate clamped beam of internet of things oriented |
| CN110212805B (en) * | 2019-05-30 | 2020-12-25 | 上海集成电路研发中心有限公司 | MEMS structure for improving warping degree |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5578976A (en) * | 1995-06-22 | 1996-11-26 | Rockwell International Corporation | Micro electromechanical RF switch |
| CN1519877A (en) * | 2002-12-05 | 2004-08-11 | 欧姆龙株式会社 | Contact switch and appts. provided with contact switch |
| CN1624846A (en) * | 2003-12-03 | 2005-06-08 | 电子科技大学 | Microwave/radio-frequency micromechanical switch and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3985229B2 (en) * | 2003-09-22 | 2007-10-03 | 廣瀬 満 | Micro mechanical switch |
| KR100761476B1 (en) * | 2004-07-13 | 2007-09-27 | 삼성전자주식회사 | MEMS RF-switch for using semiconductor |
-
2014
- 2014-05-29 CN CN201410234153.2A patent/CN103985608B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5578976A (en) * | 1995-06-22 | 1996-11-26 | Rockwell International Corporation | Micro electromechanical RF switch |
| CN1519877A (en) * | 2002-12-05 | 2004-08-11 | 欧姆龙株式会社 | Contact switch and appts. provided with contact switch |
| CN1624846A (en) * | 2003-12-03 | 2005-06-08 | 电子科技大学 | Microwave/radio-frequency micromechanical switch and manufacturing method thereof |
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| CN103985608A (en) | 2014-08-13 |
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