CN115313010A - MEMS five-port annular junction with adjustable power distribution ratio and preparation method thereof - Google Patents

MEMS five-port annular junction with adjustable power distribution ratio and preparation method thereof Download PDF

Info

Publication number
CN115313010A
CN115313010A CN202210978586.3A CN202210978586A CN115313010A CN 115313010 A CN115313010 A CN 115313010A CN 202210978586 A CN202210978586 A CN 202210978586A CN 115313010 A CN115313010 A CN 115313010A
Authority
CN
China
Prior art keywords
port
mems
cantilever beam
annular junction
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210978586.3A
Other languages
Chinese (zh)
Inventor
张志强
蒋亦非
金建镇
李波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Southeast University
Original Assignee
Southeast University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southeast University filed Critical Southeast University
Priority to CN202210978586.3A priority Critical patent/CN115313010A/en
Publication of CN115313010A publication Critical patent/CN115313010A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
    • H01P5/184—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being strip lines or microstrips
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/32—Non-reciprocal transmission devices
    • H01P1/38—Circulators
    • H01P1/383—Junction circulators, e.g. Y-circulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Micromachines (AREA)

Abstract

The invention relates to an MEMS five-port annular junction with adjustable power distribution ratio and a preparation method thereof. The first port of the five-port annular junction is an input end, and the second port, the third port, the fourth port and the fifth port are respectively positioned on two sides of the first port and are output ends; the MEMS cantilever beam is positioned at equal parts of the fourth port and the fifth port on the annular junction, driving voltage is applied to the lower polar plate, the height of the MEMS cantilever beam is reduced based on the electrostatic principle, namely the MEMS cantilever beam is in contact with a signal line of the annular junction, so that the signal line is in a ground short circuit, the topological structure of the whole circuit is changed, and the power distribution ratio of the output port is adjusted. The MEMS five-port annular junction with the adjustable power distribution ratio belongs to a passive device, has the characteristics of miniaturization, adjustable power distribution ratio and the like, is compatible with a silicon-based CMOS (complementary metal oxide semiconductor) process, is convenient to integrate and is low in cost.

Description

MEMS five-port annular junction with adjustable power distribution ratio and preparation method thereof
Technical Field
The invention belongs to the technical field of micro-electro-mechanical systems (MEMS), and particularly relates to an MEMS five-port annular junction with adjustable power distribution ratio and a preparation method thereof.
Background
With the rapid development of intelligent mobile terminals, the wireless data traffic is exponentially increased, and the demand of people for communication services is sharply increased to different degrees, so that a Multiple Input Multiple Output (MIMO) wireless communication system capable of greatly improving the channel capacity is widely applied. The power divider is one of important devices in a wireless communication system, and is a device capable of dividing one path of signal energy into two or more paths for output, and several commonly used power dividers are an orthogonal hybrid network, a 180-degree hybrid network and a Wilkinson power divider respectively. With the improvement of the integration degree of the microwave system, the adjustability and miniaturization of the communication system are great challenges in the field of radio frequency/microwave technology, however, the existing power divider has the disadvantages of fixed number of channels, non-adjustable power distribution ratio and the like, so that a power divider with adjustable power distribution ratio and output channel number needs to be developed to meet the requirements of specific situations. With the intensive research of the MEMS technology, a power distribution device that realizes the above-described functions based on the MEMS technology is made possible.
Disclosure of Invention
The invention aims to provide an MEMS five-port annular junction with adjustable power distribution ratio and a preparation method thereof, and aims to solve the technical problems that the existing power divider has fixed channel number and nonadjustable power distribution ratio.
In order to solve the technical problems, the specific technical scheme of the invention is as follows:
an MEMS five-port annular junction with adjustable power distribution ratio comprises a silicon substrate, and a CPW-based port, an annular junction, an MEMS cantilever beam, a lead, a pressure welding block, an air bridge and a lower polar plate which are arranged on the silicon substrate;
the CPW-based port and the annular junction are placed on a silicon substrate to form a main body structure of the annular directional coupler; the characteristic impedance of the port based on the CPW is 50 omega, and the characteristic impedance of the annular junction is 70.7 omega; the port based on the CPW comprises a first port, a second port, a third port, a fourth port and a fifth port, and the tail end of the port based on the CPW is connected with the annular junction; the first port is an input end, the second port, the third port, the fourth port and the fifth port are output ends, and the electrical lengths of the fourth port, the second port, the first port, the third port and the fifth port, which are separated on the annular junction, are all quarter wavelengths; the MEMS cantilever beam comprises an anchor area; the MEMS cantilever beam is positioned at the equal division of the fourth port and the fifth port on the annular junction, the electrical length between the MEMS cantilever beam and the annular junction of the fourth port and the fifth port is a quarter wavelength, one end of the MEMS cantilever beam is suspended on a signal line of the annular junction, one end of the MEMS cantilever beam is fixed on a CPW ground line between the fourth port and the fifth port through an anchor area, a lower polar plate is positioned between the signal line of the annular junction below the MEMS cantilever beam and the anchor area of the cantilever beam, the lower polar plate is led out through a lead and connected with a pressure welding block, and an air bridge is suspended above the lead and connected with the CPW ground line separated between the fourth port and the fifth port; the MEMS cantilever beam, the lower polar plate, the lead and the pressure welding block form an MEMS switch.
Further, the first port, the second port, the third port, the fourth port and the fifth port are identical.
The invention also discloses a preparation method of the MEMS five-port annular junction with adjustable power distribution ratio, which comprises the following steps:
step 1, preparing a silicon substrate: selecting high-resistance silicon with the thickness of 400 mu m as a substrate;
step 2, thermal oxidation of SiO 2 Dielectric layer: growing a layer of SiO on a silicon substrate 2 Formation of SiO 2 A dielectric layer;
step 3, sputtering and photoetching a Cr/Au layer: siO processed in silicon substrate and step 2 2 Coating photoresist on the two layers of the dielectric layer, and removing the photoresist at the positions of the port, the lower polar plate, the lead and the pressure welding block which are prepared to manufacture the annular junction and are based on the CPW; then, by sputtering to produceLong Cr/Au; finally, removing the reserved photoresist by utilizing a stripping technology, and removing Cr/Au on the photoresist to form an annular junction, a port based on CPW, a lower polar plate, a lead and a pressure welding block;
and 4, depositing and photoetching a polyimide sacrificial layer: coating a polyimide sacrificial layer on the substrate obtained in the step (3), photoetching the polyimide sacrificial layer, and only reserving the polyimide sacrificial layer below the air bridge and the MEMS cantilever beam;
step 5, evaporating the seed layer: growing a seed layer for electroplating on the substrate obtained in the step 4 in an evaporation mode, and evaporating titanium/gold/titanium to be used as the seed layer;
step 6, gold electroplating: coating photoresist on the substrate obtained in the step 5, and removing the photoresist on the MEMS cantilever beam and the air bridge to be manufactured; then, electroplating a layer of gold; finally, removing the reserved photoresist by utilizing a stripping technology, removing gold on the photoresist in a connecting manner, and corroding the titanium/gold/titanium seed layer by utilizing a reverse etching technology to form an MEMS cantilever beam and an air bridge;
step 7, releasing the polyimide sacrificial layer: scribing the substrate obtained in the step 6, putting the unit chips into a developing solution for soaking in batches, removing the polyimide sacrificial layer below the MEMS cantilever beam and the air bridge, soaking in deionized water, dehydrating with absolute ethyl alcohol, volatilizing at normal temperature, and drying.
The MEMS five-port annular junction with adjustable power distribution ratio and the preparation method thereof have the following advantages:
1. the MEMS five-port annular junction adopts the annular junction based on the CPW to replace the traditional microstrip line structure, realizes the transmission and distribution of microwave power, can ensure that the MEMS five-port annular junction has lower microwave loss at a higher frequency band, and is convenient for connecting other devices in series and in parallel because a signal line and a ground line are on the same plane.
2. In the structural design, an MEMS cantilever beam is arranged at the equi-division position of a fourth port and a fifth port of the MEMS five-port annular junction, and the MEMS cantilever beam is switched in an UP state and a DOWN state by applying driving voltage on a lower polar plate, so that the circuit topological structure of the MEMS five-port annular junction is changed, and the power distribution ratio of the MEMS five-port annular junction is changed.
3. The MEMS five-port ring junction has the characteristics of simple structure and miniaturization, is compatible with a silicon-based CMOS process, is convenient to integrate and has low cost.
Drawings
FIG. 1 is a schematic diagram of a MEMS five-port ring junction with adjustable power splitting ratio of the present invention;
FIG. 2 isbase:Sub>A cross-sectional view taken along line A-A of the adjustable power splitting ratio MEMS five-port ring junction of the present invention;
FIG. 3 (a) is a UP state circuit topology diagram of the MEMS five-port ring junction with adjustable power splitting ratio of the present invention;
FIG. 3 (b) is a diagram of the circuit topology of the switch DOWN state of the MEMS five-port ring junction with adjustable power splitting ratio of the present invention;
FIG. 4 (a) is a diagram showing simulation results of the UP state of the switch of the MEMS five-port ring junction with adjustable power splitting ratio according to the present invention;
FIG. 4 (b) is a diagram showing simulation results of the DOWN state of the switch of the MEMS five-port ring junction with adjustable power splitting ratio of the present invention;
the symbols in the figure illustrate: 1. a first port; 2. pressing a welding block; 3. a lead wire; 4. an air bridge; 5. an MEMS cantilever beam; 6. a lower polar plate; 7. a silicon substrate; 8. SiO 2 2 A dielectric layer; 9. a loop tie; 10. a second port; 11. a third port; 12. a fourth port; 13. a fifth port; 14. a MEMS switch.
Detailed Description
For better understanding of the purpose, structure and function of the present invention, the MEMS five-port ring junction with adjustable power splitting ratio and the method for fabricating the same according to the present invention will be described in detail with reference to the accompanying drawings.
As shown in fig. 1 and 2, the MEMS five-port ring junction with adjustable power division ratio uses high-resistance silicon as a substrate, and five CPW-based ports, a ring junction 9, a MEMS cantilever 5, a lead 3, a pressure welding block 2, an air bridge 4, and a bottom plate 6 are disposed on a silicon substrate 7;
the CPW-based port and the ring junction 9 are placed on the silicon substrate 7 to form the main structure of the ring directional coupler; the characteristic impedance of the port based on CPW is 50 omega, and the characteristic impedance of the annular junction (9) is 70.7 omega; the port based on the CPW comprises a first port 1, a second port 10, a third port 11, a fourth port 12 and a fifth port 13, and the tail end of the port based on the CPW is connected with the annular junction 9; wherein the first port 1 is an input end, the second port 10, the third port 11, the fourth port 12 and the fifth port 13 are output ends, and the electrical lengths of the fourth port 12 and the second port 10, the second port 10 and the first port 1, the first port 1 and the third port 11, and the third port 11 and the fifth port 13, which are separated from each other on the ring-shaped junction 9, are all quarter wavelengths;
the MEMS cantilever beam 5 comprises an anchor area; the MEMS cantilever beam 5 is positioned at the equal division of the fourth port 12 and the fifth port 13 on the annular junction 9, the electrical lengths of the MEMS cantilever beam 5 and the fourth port 12 and the fifth port 13 on the annular junction 9 are both quarter wavelengths, one end of the MEMS cantilever beam 5 is suspended on a signal line of the annular junction 9, and the other end of the MEMS cantilever beam is fixed on a CPW ground line between the fourth port and the fifth port through an anchor area, the lower polar plate 6 is positioned between the signal line of the annular junction 9 below the MEMS cantilever beam 5 and the anchor area of the cantilever beam 5, the lower polar plate 6 is led out through the lead 3 and is connected with the pressure welding block 2, and the air bridge 4 is suspended on the lead 3 and is connected with the CPW ground line separated between the fourth port and the fifth port. The cantilever beam 5, the lower polar plate 6, the lead 3 and the bonding block 2 form an MEMS switch 14.
The MEMS five-port annular junction provided by the invention has the function of adjustable power distribution ratio. And a driving voltage is applied to the lower polar plate 6, the MEMS cantilever beam 5 is pulled down based on the electrostatic principle and is in contact with the signal line of the annular junction 9, so that the signal line is short-circuited, and the topological structure of the whole circuit is changed. When no driving voltage is applied, the MEMS cantilever 5 is in an UP state, the circuit topology of the five-port ring junction is as shown in fig. 3 (a), at this time, the microwave signal power of the first port is equally divided to the second port 10, the third port 11, the fourth port 12, and the fifth port 13 to have almost no output, and the simulation result is as shown in fig. 4 (a); when a driving voltage is applied, the MEMS cantilever 5 is in a DOWN state, and the circuit topology of the five-port ring junction is as shown in fig. 3 (b), where the microwave signal power of the first port 1 is divided into the second port 10, the third port 11, the fourth port 12 and the fifth port 13, the output power of the second port 10 and the third port 11 is about 30% of the input power of the first port 1, and the output power of the fourth port 12 and the fifth port 13 is about 15% of the input power of the first port 1, as shown in fig. 4 (b).
The invention relates to a preparation method of an MEMS five-port annular junction with adjustable power distribution ratio, which comprises the following steps:
step 1, preparing a silicon substrate 7: selecting high-resistance silicon with the thickness of 400 mu m as a substrate;
step 2, thermal oxidation of SiO 2 Dielectric layer 8: growing a layer of SiO on the silicon substrate 7 2 Formation of SiO 2 A dielectric layer 8;
step 3, sputtering and photoetching a Cr/Au layer: siO processed in the silicon substrate 7 and step 2 2 Coating photoresist on the two layers of the dielectric layer 8, and removing the photoresist at the positions of the prepared annular junction 9, the CPW-based port, the lower polar plate 6, the lead 3 and the pressure welding block 2; then, growing Cr/Au in a sputtering mode; finally, removing the reserved photoresist by utilizing a stripping technology, and removing Cr/Au on the photoresist to form an annular junction 9, a port based on CPW, a lower polar plate 6, a lead 3 and a pressure welding block 2;
and 4, depositing and photoetching a polyimide sacrificial layer: coating a polyimide sacrificial layer on the substrate obtained in the step (3), photoetching the polyimide sacrificial layer, and only reserving the polyimide sacrificial layer below the air bridge 4 and the MEMS cantilever beam 5;
step 5, evaporating the seed layer: growing a seed layer for electroplating on the substrate obtained in the step 4 in an evaporation mode, and evaporating titanium/gold/titanium to be used as the seed layer;
step 6, gold electroplating: coating photoresist on the substrate obtained in the step 5, and removing the photoresist on the MEMS cantilever 5 and the air bridge 4 to be manufactured; then, electroplating a layer of gold; finally, removing the reserved photoresist by utilizing a stripping technology, removing gold on the photoresist, and corroding the titanium/gold/titanium seed layer by utilizing a reverse etching technology to form an MEMS cantilever beam 5 and an air bridge 4;
and 7, releasing the polyimide sacrificial layer: and (4) scribing the substrate obtained in the step (6), putting the unit chips into a developing solution for soaking in batches, removing the polyimide sacrificial layers below the MEMS cantilever beam 5 and the air bridge 4, slightly soaking in deionized water, dehydrating with absolute ethyl alcohol, volatilizing at normal temperature, and airing.
It is to be understood that the present invention has been described with reference to certain embodiments, and that various changes in the features and embodiments, or equivalent substitutions may be made therein by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.

Claims (3)

1. An MEMS five-port annular junction with adjustable power distribution ratio is characterized by comprising a silicon substrate (7), and a CPW-based port, an annular junction (9), an MEMS cantilever beam (5), a lead (3), a pressure welding block (2), an air bridge (4) and a lower polar plate (6) which are arranged on the silicon substrate (7);
the CPW-based port and the annular junction (9) are placed on a silicon substrate (7) to form a main body structure of the annular directional coupler; the characteristic impedance of the port based on the CPW is 50 omega, and the characteristic impedance of the annular junction (9) is 70.7 omega; the port based on the CPW comprises a first port (1), a second port (10), a third port (11), a fourth port (12) and a fifth port (13), and the tail end of the port based on the CPW is connected with an annular junction (9); the first port (1) is an input end, the second port (10), the third port (11), the fourth port (12) and the fifth port (13) are output ends, and the electrical lengths of the fourth port (12), the second port (10), the first port (1), the third port (11) and the fifth port (13) which are separated from each other on the annular junction (9) are quarter wavelengths; the MEMS cantilever beam (5) comprises an anchor area; the MEMS cantilever beam (5) is positioned at the equal division of the fourth port (12) and the fifth port (13) on the annular junction (9), the electrical lengths of the MEMS cantilever beam and the fourth port (12) and the fifth port (13) on the annular junction (9) are quarter wavelengths, one end of the MEMS cantilever beam (5) is suspended on a signal line of the annular junction (9) and is fixed on a CPW ground line between the fourth port and the fifth port through an anchor area, the lower polar plate (6) is positioned between the signal line of the annular junction (9) below the MEMS cantilever beam (5) and the anchor area of the cantilever beam (5), the lower polar plate (6) is led out through a lead (3) and is connected with a pressure welding block (2), and the air bridge (4) is suspended above the lead (3) and is connected with the CPW ground line separated between the fourth port (12) and the fifth port (13); the MEMS switch (14) is composed of the MEMS cantilever beam (5), the lower polar plate (6), the lead (3) and the pressure welding block (2).
2. The adjustable power splitting ratio MEMS five-port ring junction according to claim 1, wherein the first port (1), the second port (10), the third port (11), the fourth port (12) and the fifth port (13) are identical.
3. The method for preparing the MEMS five-port annular junction with the adjustable power splitting ratio according to claim 1, comprising the following steps of:
step 1, preparing a silicon substrate (7): selecting high-resistance silicon with the thickness of 400 mu m as a substrate;
step 2, thermal oxidation of SiO 2 Dielectric layer (8): growing a layer of SiO on a silicon substrate (7) 2 Formation of SiO 2 A dielectric layer (8);
step 3, sputtering and photoetching a Cr/Au layer: siO processed in silicon substrate (7) and step 2 2 Coating photoresist on the two layers of the dielectric layer (8), and removing the photoresist at the positions of preparing and manufacturing the annular junction (9), the port based on the CPW, the lower polar plate (6), the lead (3) and the pressure welding block (2); then, growing Cr/Au in a sputtering mode; finally, removing the remained photoresist by utilizing a stripping technology, and removing Cr/Au on the photoresist to form a ring junction (9), a port based on CPW, a lower polar plate (6), a lead (3) and a pressure welding block (2);
and 4, depositing and photoetching a polyimide sacrificial layer: coating a polyimide sacrificial layer on the substrate obtained in the step (3), photoetching the polyimide sacrificial layer, and only reserving the polyimide sacrificial layer below the air bridge (4) and the MEMS cantilever beam (5);
step 5, evaporating the seed layer: growing a seed layer for electroplating on the substrate obtained in the step 4 in an evaporation mode, and evaporating titanium/gold/titanium to be used as the seed layer;
step 6, gold electroplating: coating photoresist on the substrate obtained in the step 5, and removing the photoresist on the MEMS cantilever beam (5) and the air bridge (4) to be manufactured; then, electroplating a layer of gold; finally, removing the reserved photoresist by utilizing a stripping technology, removing gold on the photoresist in a connecting manner, and corroding the titanium/gold/titanium seed layer by utilizing a reverse etching technology to form an MEMS cantilever beam (5) and an air bridge (4);
and 7, releasing the polyimide sacrificial layer: and (4) scribing the substrate obtained in the step (6), putting the unit chips into a developing solution for soaking in batches, removing the polyimide sacrificial layer below the MEMS cantilever beam (5) and the air bridge (4), soaking in deionized water, dehydrating with absolute ethyl alcohol, volatilizing at normal temperature, and airing.
CN202210978586.3A 2022-08-16 2022-08-16 MEMS five-port annular junction with adjustable power distribution ratio and preparation method thereof Pending CN115313010A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210978586.3A CN115313010A (en) 2022-08-16 2022-08-16 MEMS five-port annular junction with adjustable power distribution ratio and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210978586.3A CN115313010A (en) 2022-08-16 2022-08-16 MEMS five-port annular junction with adjustable power distribution ratio and preparation method thereof

Publications (1)

Publication Number Publication Date
CN115313010A true CN115313010A (en) 2022-11-08

Family

ID=83863059

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210978586.3A Pending CN115313010A (en) 2022-08-16 2022-08-16 MEMS five-port annular junction with adjustable power distribution ratio and preparation method thereof

Country Status (1)

Country Link
CN (1) CN115313010A (en)

Similar Documents

Publication Publication Date Title
US6472962B1 (en) Inductor-capacitor resonant RF switch
US7858423B2 (en) MEMS based RF components with vertical motion and parallel-plate structure and manufacture thereof using standard CMOS technologies
CN103177904A (en) Radio frequency MEMS (micro-electromechanical system) switch and forming method thereof
US20120256708A1 (en) Millimeter Wave Filter for Wireless Communications Systems
CN107196025B (en) Silicon-based SIW band metal column clamped beam reconfigurable band-pass filter for Internet of things
Park et al. Reconfigurable millimeter-wave filters using CPW-based periodic structures with novel multiple-contact MEMS switches
Chan et al. Scalable RF MEMS switch matrices: Methodology and design
Vahidpour et al. Micromachined J-band rectangular waveguide filter
CN107425249B (en) Silicon-based cantilever beam reconfigurable SIW band-pass filter for Internet of things
CN102403561B (en) Micro-electromechanical cantilever beam switch type microwave power coupler and method for preparing microwave power coupler
CN102255128A (en) Micro electro mechanical clamped beam type directional microwave power coupler and manufacturing method thereof
KR100469248B1 (en) MicroInductor for Wireless Communication Module
CN115313010A (en) MEMS five-port annular junction with adjustable power distribution ratio and preparation method thereof
US9048053B2 (en) Electrostatic micro relay and manufacturing method for the same
JP3472495B2 (en) Low-loss air-suspended radially coupled patch for N-way RF switch
CN110247146B (en) Broadband power divider chip based on thin film integrated passive element technology
CN107394323A (en) Internet of things oriented silicon substrate SIW band metal column cantilever beam restructural bandpass filters
CN113285192A (en) TSV-based parallel open-circuit stub type broadband band-stop filter
Kim et al. Hybrid ring coupler for W-band MMIC applications using MEMS technology
Tang et al. A compact DC-20 GHz SPDT switch circuit using lateral RF MEMS switches
TAKAHASHI et al. A compact V-band filter/antenna integrated receiver IC built on Si-micromachined BCB suspended structure
Hou et al. Wideband Switchable Sharp-Rejection Filter in Compact 3-D Heterogeneous Integration
CN113184798B (en) Variable MEMS microwave filter
CN112886160B (en) Compact substrate integrated waveguide filter based on silicon-based MEMS (micro-electromechanical systems) process
Xu et al. Memristive switch for intelligent RF applications

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination