CN107394021A - 一种增强空穴注入的异质结构led器件 - Google Patents
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Abstract
一种增强空穴注入的异质结构LED器件,包括衬底及衬底上的外延结构,所述外延结构包括沿外延生长方向依次设置的缓冲层、非故意掺杂层、n型电子漂移层、多量子阱发光有源区、p型电子阻挡层、p型空穴漂移层和p型接触层,所述n型电子漂移层上设置有n型欧姆接触电极,所述p型接触层上设置有p型欧姆接触电极,所述p型电子阻挡层由沿外延生长方向依次设置的p‑AlxGa1‑ xN层、p‑Iny1Ga1‑y1N/p‑Iny2Ga1‑y2N/p‑Iny3Ga1‑y3N复合层及p‑AlzGa1‑zN层构成。本发明能够在保证对电子较好的阻挡作用、不增加器件工作电压的基础上,有效地提高空穴浓度和空穴漂移速率,缓解Mg受主激活能大、空穴迁移率低造成的不利影响,大大增强了空穴注入,从而提高了器件发光效率。
Description
技术领域
本发明涉及半导体照明技术领域,具体是涉及一种增强空穴注入的异质结构LED器件。
背景技术
GaN基发光二极管(LED)具有体积小、寿命长、高效节能、绿色环保等优点,是传统白炽灯、荧光灯的理想替代光源,是引领新一代照明革命的核心关键器件。近十余年来,LED照明市场规模不断扩大,取得了巨大的成功,同时可见光通信、微显示、可穿戴智能眼镜等LED新型应用不断发展,对器件性能提出了更高要求。当前在学术界和产业界,仍面临的重要挑战之一是如何解决大注入电流下LED的发光效率骤降(Efficiency Droop)问题。导致器件出现效率骤降的原因众说纷纭,可能包括缺陷相关的非辐射复合、俄歇复合、载流子解局域化、空穴注入效率限制或载流子泄漏等多种因素。其中,空穴注入效率限制或载流子泄漏是其中最重要的因素之一,这是因为对GaN基材料体系而言,n型和p型材料存在显著的导电性差异,例如:n型GaN基材料掺杂容易实现,电子浓度可远大于1×1018 cm-3,且迁移率可>300 cm2/V/s;而p型GaN基材料缺乏合适的受主掺杂剂(通常用Mg),空穴浓度很难做到1×1018cm-3以上,且迁移率通常<10 cm2/V/s。因此,LED器件中n区和p区载流子存在显著的不平衡,从而导致内量子效率较低或者大注入电流下电子泄漏严重,导致器件发光效率下降。在Mg受主激活能高达150-250meV的限制条件下,现有技术通常在量子阱发光有源区和p-GaN漂移区之间引入p-AlGaN、AlGaN/GaN短周期超晶格、或者渐变组分p-AlGaN等电子阻挡层结构来阻挡电子泄漏。这些电子阻挡层在一定程度上缓解了效率骤降,但仍存在厚度较大导致器件工作电压增大、外延生长条件较为苛刻、或者制备工艺复杂等一系列问题。
发明内容
本发明的目的在于针对上述存在问题和不足,提供一种结构可靠,能够实现阻挡层中价带能带结构和电场强度分布的局部调节,有效地增强空穴注入,发光效率高的异质结构LED器件。
本发明的技术方案是这样实现的:
本发明所述的增强空穴注入的异质结构LED器件,其特点是:包括衬底及衬底上的外延结构,所述外延结构包括沿外延生长方向依次设置的缓冲层、非故意掺杂层、n型电子漂移层、多量子阱发光有源区、p型电子阻挡层、p型空穴漂移层和p型接触层,所述n型电子漂移层上设置有n型欧姆接触电极,所述p型接触层上设置有p型欧姆接触电极,所述p型电子阻挡层由沿外延生长方向依次设置的p-AlxGa1-xN层、p-Iny1Ga1-y1N/p-Iny2Ga1-y2N/p-Iny3Ga1- y3N复合层及p-AlzGa1-zN层构成,其中所述p-AlxGa1-xN层用于阻挡电子,所述p-Iny1Ga1-y1N/p-Iny2Ga1-y2N/p-Iny3Ga1-y3N复合层用于调整价带和电场强度,使价带更接近空穴的准费米能级而提高空穴浓度,并使空穴在更大的电场下加速获得更高速率,所述p-AlzGa1-zN层用于辅助增强阻挡电子。
其中,所述p-AlxGa1-xN层的Al组分x为0.07≤x≤1。而且,所述p-AlxGa1-xN层的厚度为1~5nm。
所述p-Iny1Ga1-y1N/p-Iny2Ga1-y2N/p-Iny3Ga1-y3N复合层的In组分y1、y2、y3分别为0.04≤y1≤0.2,0.04≤y2≤0.2,0.04≤y3≤0.2,且y2≤y1≤y3。而且,所述p-Iny1Ga1-y1N/p-Iny2Ga1-y2N/p-Iny3Ga1-y3N复合层中每一层的厚度均为1~5nm。
所述p-AlzGa1-zN层的Al组分z为0.07≤z≤1。而且,所述p-AlzGa1-zN层的厚度为1~5nm。
为了使本发明具有多种不同的结构形式,以方便地满足不同的使用需要,既可以是,所述衬底为生长衬底,所述缓冲层、非故意掺杂层、n型电子漂移层、多量子阱发光有源区、p型电子阻挡层、p型空穴漂移层和p型接触层由生长衬底从下往上依次外延生长而成;也可以是,所述衬底为导热基底,所述导热基底通过键合层键合在n型欧姆接触电极和p型欧姆接触电极上而实现与外延结构的连接。
本发明由于采用了由p-AlxGa1-xN层、p-Iny1Ga1-y1N/p-Iny2Ga1-y2N/p-Iny3Ga1-y3N复合层和p-AlzGa1-zN层组成的异质结作为p型电子阻挡层,通过采用较薄的p-AlxGa1-xN层降低了对注入空穴的阻挡作用;同时,通过引入压电极化与p-AlxGa1-xN材料相反的p-Iny1Ga1- y1N/p-Iny2Ga1-y2N/p-Iny3Ga1-y3N复合层,由增强的极化电场能够使p-AlxGa1-xN和p-Iny1Ga1- y1N之间带阶处的价带更接近空穴准费米能级,并使空穴在更大的电场下漂移,而且复合层中p-Iny2Ga1-y2N/p-Iny3Ga1-y3N的作用是由带阶差异进一步提升价带和电场强度。通过以上多层异质结的共同作用,在优化的组分和厚度条件下,能够在保证对电子较好的阻挡作用、不增加器件工作电压的基础上,有效地提高空穴浓度和空穴漂移速率,缓解Mg受主激活能大、空穴迁移率低造成的不利影响,大大增强了空穴注入,从而提高了器件发光效率。此外,由于增强了空穴注入,可以降低LED器件p型层的整体厚度而保持器件性能不变,从而有利于节约材料外延生长的时间和原料成本,并减少p型层对量子阱发光的吸收,对于进一步提高器件性能和产业化生产都具有积极意义。
下面结合附图对本发明作进一步的说明。
附图说明
图1为本发明方案一的结构示意图。
图2为本发明方案二的结构示意图。
具体实施方式
如图1-图2所示,本发明所述的增强空穴注入的异质结构LED器件,包括衬底1及衬底1上的外延结构,所述外延结构包括沿外延生长方向依次设置的缓冲层2、非故意掺杂层3、n型电子漂移层4、多量子阱发光有源区5、p型电子阻挡层6、p型空穴漂移层7和p型接触层8,所述n型电子漂移层4上设置有n型欧姆接触电极9,所述p型接触层8上设置有p型欧姆接触电极10。
其中,所述p型电子阻挡层6由沿外延生长方向依次设置的p-AlxGa1-xN层61、p-Iny1Ga1-y1N/p-Iny2Ga1-y2N/p-Iny3Ga1-y3N复合层62及p-AlzGa1-zN层63构成。所述p-AlxGa1-xN层61用于阻挡电子,且其厚度为1~5nm ,Al组分x为0.07≤x≤1。所述p-Iny1Ga1-y1N/p-Iny2Ga1-y2N/p-Iny3Ga1-y3N复合层62用于调整价带和电场强度,使价带更接近空穴的准费米能级而提高空穴浓度,并使空穴在更大的电场下加速获得更高速率,且其每一层的厚度均为1~5nm,In组分y1、y2、y3分别为0.04≤y1≤0.2,0.04≤y2≤0.2,0.04≤y3≤0.2,且y2≤y1≤y3。所述p-AlzGa1-zN层63用于辅助增强阻挡电子,且其厚度为1~5nm,Al组分z为0.07≤z≤1。
下面通过具体实施例对本发明作进一步的说明。
实施例一:
本实施例中LED器件为正装结构的蓝光LED器件,其结构如图1所示。此时,衬底1为蓝宝石图形化生长衬底,在该蓝宝石图形化生长衬底上采用MOCVD生长法由下往上依次外延生长有GaN缓冲层、GaN非故意掺杂层、n型GaN电子漂移层、10个周期的In0.2Ga0.8N/GaN多量子阱发光有源区(发光波长约为460nm)、p型电子阻挡层、p型GaN空穴漂移层和p型GaN接触层。外延生长的条件和参数与传统大功率蓝光LED相似。其不同点在于p型电子阻挡层由厚度为5nm 的p-Al0.14Ga0.86N层、厚度依次为1nm/1nm/1nm 的p-In0.08Ga0.92N/p-In0.04Ga0.96N/p-In0.14Ga0.86N复合层以及厚度为5nm 的p-Al0.07Ga0.93N层构成。Mg掺杂浓度都为3×1019 cm-3,复合层中In组分依次为0.08/0.04/0.14,均小于多量子阱发光有源区的In组分0.2,以避免吸收正面出光。
将得到的外延片按常规芯片工艺流片,采用ICP刻蚀工艺刻蚀部分外延结构,露出n型GaN电子漂移层,并在该露出的n型GaN电子漂移层的表面上通过电子束蒸发的方法制备Ti/Al/Ni/Au多层金属n型欧姆接触电极,同时在p型GaN接触层的表面上通过电子束蒸发的方法制备ITO/Ti/Au多层结构p型欧姆接触电极,最后制成单颗芯片,即可得到本实施例中增强空穴注入的蓝光LED器件。
实施例二:
本实施例中LED器件为正装结构的近紫外光LED器件,其结构如图1所示。此时,衬底1为蓝宝石/AlN复合生长衬底,在该蓝宝石/AlN复合生长衬底上采用MOCVD生长法由下往上依次外延生长有GaN缓冲层、GaN非故意掺杂层、n型Al0.07Ga0.93N电子漂移层、10个周期的In0.08Ga0.92N/GaN多量子阱发光有源区(发光波长约为395nm)、p型电子阻挡层、p型Al0.07Ga0.93N空穴漂移层和p型In0.07Ga0.93N接触层。外延生长的条件和参数与传统近紫外光LED相似。其不同点在于p型电子阻挡层由厚度为2nm 的p-Al0.15Ga0.85N层、厚度依次为2nm/2nm/2nm 的p-In0.05Ga0.95N/p-In0.03Ga0.97N/p-In0.08Ga0.92N复合层以及厚度为5nm 的p-Al0.14Ga0.86N层构成。Mg掺杂浓度都为3×1019 cm-3,复合层中In组分依次为0.05/0.03/0.08,均小于多量子阱发光有源区的In组分0.1,以避免吸收正面出光。另外,p型Al0.07Ga0.93N空穴漂移层的厚度也由传统结构LED的150nm减薄为75nm,且p型层的总厚度约为90nm,为薄p型层的LED器件。
将得到的外延片按常规芯片工艺流片,采用ICP刻蚀工艺刻蚀部分外延结构,露出n型GaN电子漂移层,并在该露出的n型GaN电子漂移层的表面上通过电子束蒸发的方法制备Ti/Al/Ti/Au多层金属n型欧姆接触电极,同时在p型In0.07Ga0.93N接触层的表面上通过电子束蒸发的方法制备Ni/Au多层结构p型欧姆接触电极,最后制成单颗芯片,即可得到本实施例中增强空穴注入的近紫外光LED器件。在空穴注入获得增强的情况下,薄p型层的LED器件减少了外延原料和时间成本,且更有利于提高器件出光效率。
实施例三:
本实施例中LED器件为倒装结构的近紫外光LED器件,其结构如图2所示。此时,衬底1为导热基底。其外延结构为硅衬底上采用MOCVD生长法由下往上依次外延生长形成的AlN缓冲层、Al0.3Ga0.7N非故意掺杂层、n型Al0.1Ga0.9N电子漂移层、10个周期的In0.02Ga0.98N/Al0.1Ga0.9N多量子阱发光有源区(发光波长约为365nm)、p型电子阻挡层、p型Al0.1Ga0.9N空穴漂移层和p型In0.02Ga0.98N接触层。外延生长的条件和参数与传统近紫外光LED相似。其不同点在于p型电子阻挡层由厚度为3nm的 p-Al0.2Ga0.8N层、厚度依次为3nm/3nm/3nm的p-In0.02Ga0.98N/p-In0.02Ga0.98N/p-In0.02Ga0.98N复合层以及厚度为3nm 的p-Al0.15Ga0.85N层构成。Mg掺杂浓度都为5×1019 cm-3,复合层中In组分依次为0.02/0.02/0.02,以尽量减少对器件向下发光及反射光的吸收。
将得到的外延片按倒装芯片工艺流片,采用ICP刻蚀工艺刻蚀部分外延结构,露出n型Al0.1Ga0.9N电子漂移层,并在该露出的n型Al0.1Ga0.9N电子漂移层的表面上通过电子束蒸发的方法制备V/Al/V/Au多层金属n型欧姆接触电极,同时在p型In0.02Ga0.98N接触层的表面上通过电子束蒸发的方法制备Ag/Ni/Au结构p型欧姆接触反射镜电极,并通过倒装工艺将芯片通过键合层11键合到导热基底上,最后剥离硅衬底,制成单颗芯片,即可得到本实施例中增强空穴注入的近紫外光LED器件。
本发明是通过实施例来描述的,但并不对本发明构成限制,参照本发明的描述,所公开的实施例的其他变化,如对于本领域的专业人士是容易想到的,这样的变化应该属于本发明权利要求限定的范围之内。
Claims (9)
1.一种增强空穴注入的异质结构LED器件,其特征在于:包括衬底(1)及衬底(1)上的外延结构,所述外延结构包括沿外延生长方向依次设置的缓冲层(2)、非故意掺杂层(3)、n型电子漂移层(4)、多量子阱发光有源区(5)、p型电子阻挡层(6)、p型空穴漂移层(7)和p型接触层(8),所述n型电子漂移层(4)上设置有n型欧姆接触电极(9),所述p型接触层(8)上设置有p型欧姆接触电极(10),所述p型电子阻挡层(6)由沿外延生长方向依次设置的p-AlxGa1- xN层(61)、p-Iny1Ga1-y1N/p-Iny2Ga1-y2N/p-Iny3Ga1-y3N复合层(62)及p-AlzGa1-zN层(63)构成,其中所述p-AlxGa1-xN层(61)用于阻挡电子,所述p-Iny1Ga1-y1N/p-Iny2Ga1-y2N/p-Iny3Ga1-y3N复合层(62)用于调整价带和电场强度,使价带更接近空穴的准费米能级而提高空穴浓度,并使空穴在更大的电场下加速获得更高速率,所述p-AlzGa1-zN层(63)用于辅助增强阻挡电子。
2.根据权利要求1所述的增强空穴注入的异质结构LED器件,其特征在于:所述p-AlxGa1-xN层(61)的Al组分x为0.07≤x≤1。
3.根据权利要求1所述的增强空穴注入的异质结构LED器件,其特征在于:所述p-AlxGa1-xN层(61)的厚度为1~5nm。
4.根据权利要求1所述的增强空穴注入的异质结构LED器件,其特征在于:所述p-Iny1Ga1-y1N/p-Iny2Ga1-y2N/p-Iny3Ga1-y3N复合层(62)的In组分y1、y2、y3分别为0.04≤y1≤0.2,0.04≤y2≤0.2,0.04≤y3≤0.2,且y2≤y1≤y3。
5.根据权利要求1所述的增强空穴注入的异质结构LED器件,其特征在于:所述p-Iny1Ga1-y1N/p-Iny2Ga1-y2N/p-Iny3Ga1-y3N复合层(62)中每一层的厚度均为1~5nm。
6.根据权利要求1所述的增强空穴注入的异质结构LED器件,其特征在于:所述p-AlzGa1-zN层(63)的Al组分z为0.07≤z≤1。
7.根据权利要求1所述的增强空穴注入的异质结构LED器件,其特征在于:所述p-AlzGa1-zN层(63)的厚度为1~5nm。
8.根据权利要求1所述的增强空穴注入的异质结构LED器件,其特征在于:所述衬底(1)为生长衬底,所述缓冲层(2)、非故意掺杂层(3)、n型电子漂移层(4)、多量子阱发光有源区(5)、p型电子阻挡层(6)、p型空穴漂移层(7)和p型接触层(8)由生长衬底从下往上依次外延生长而成。
9.根据权利要求1所述的增强空穴注入的异质结构LED器件,其特征在于:所述衬底(1)为导热基底,所述导热基底通过键合层(11)键合在n型欧姆接触电极(9)和p型欧姆接触电极(10)上而实现与外延结构的连接。
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