CN107393980B - A kind of preparation method of paper base graphene-p-type cuprous oxide composite material - Google Patents
A kind of preparation method of paper base graphene-p-type cuprous oxide composite material Download PDFInfo
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- CN107393980B CN107393980B CN201710750831.4A CN201710750831A CN107393980B CN 107393980 B CN107393980 B CN 107393980B CN 201710750831 A CN201710750831 A CN 201710750831A CN 107393980 B CN107393980 B CN 107393980B
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- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 title claims abstract description 31
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229940112669 cuprous oxide Drugs 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000002131 composite material Substances 0.000 title claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 39
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 230000008021 deposition Effects 0.000 claims abstract description 11
- 238000004070 electrodeposition Methods 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 21
- 230000002209 hydrophobic effect Effects 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000003792 electrolyte Substances 0.000 claims description 8
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 230000003252 repetitive effect Effects 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims description 4
- 239000004310 lactic acid Substances 0.000 claims description 4
- 235000014655 lactic acid Nutrition 0.000 claims description 4
- 238000004062 sedimentation Methods 0.000 claims description 4
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 238000001548 drop coating Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 238000004458 analytical method Methods 0.000 abstract description 4
- 230000005518 electrochemistry Effects 0.000 abstract description 2
- 239000000835 fiber Substances 0.000 abstract description 2
- 230000031700 light absorption Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001699 photocatalysis Effects 0.000 description 2
- 238000007146 photocatalysis Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of paper base graphene-p-type cuprous oxide composite material preparation methods, first using paper as substrate, paper base Graphene electrodes are prepared using local reduction way, then paper base graphene-p-type cuprous oxide composite material is obtained in the p-type cuprous oxide of the electro-deposition area deposition octahedral shape of paper base Graphene electrodes by On Potentiometric Stripping Analysis.The preparation method is simple, quick, is conducive to produce in enormous quantities.Based on the excellent electric conductivity of the network of fibers mechanism of paper itself, graphene and the unique shape of octahedron of p-type cuprous oxide, which has big surface area, good electric conductivity and stronger visible light absorption capacity.This unique performance is conducive to greatly improve photoelectric conversion efficiency, makes it in optical electro-chemistry field application value with higher.
Description
Technical field
The present invention relates to technical field of nanometer material preparation, are in particular a kind of paper base graphene-p-type cuprous oxide
The preparation method of composite material.
Background technique
Semiconductor nano material of the cuprous oxide as a kind of narrow band gap, since its is at low cost, small toxicity, raw material are rich
Rich, the advantages that visible absorption is high-efficient, is widely used in area of solar cell.Cuprous oxide can be divided into p-type and N-shaped
Two types.For the solar battery based on cuprous oxide, the effective ways for improving its photoelectric conversion efficiency are usually
The p-n junction formed using p-type and N-shaped cuprous nano material.Compared to N-shaped cuprous oxide, the preparation side of p-type cuprous oxide
Method has less report.In addition, photoelectric conversion efficiency can effectively be enhanced by improving the surface area of cuprous oxide.Therefore, seek
Simply, effectively there is the p-type cuprous oxide of large surface area to have great importance for method preparation.
The criss-cross fibrillar meshwork structure of paper itself makes it have biggish surface area for a large amount of nanometer of functionalization
Material.Graphene can be coated on the surface of network of fibers, further due to its unique laminated structure and excellent electric conductivity
Enhance electric conductivity, surface area and the biocompatibility of paper.Meanwhile three-dimensional graphene paper can effectively increase paper to nanometer material
The load capacity of material can obtain high performance paper base graphene-oxidation in the surface-functionalized conductor oxidate of graphene paper
Object composite material.
Summary of the invention
The purpose of the present invention is have the paper base of bigger serface and satisfactory electrical conductivity by local reduction way preparation first
Graphene electrodes, then, the p-type oxidation for depositing octahedral shape in paper base Graphene electrodes using On Potentiometric Stripping Analysis are sub-
Copper obtains paper base graphene-p-type cuprous oxide composite material.
A kind of preparation method of paper base graphene-p-type cuprous oxide composite material specifically comprises the following steps:
(1) paper base Graphene electrodes are prepared: passing through the hydrophobic wax print pattern of computer software design paper base electrode first,
As shown in Fig. 1, then designed pattern is printed upon on chromatographic paper using wax printer, and the chromatographic paper printed is existed
In 130 DEG C of baking oven, heated at constant temperature 50 seconds, melt wax, form hydrophobic region, finally in the hydrophilic region benefit of paper base electrode
Graphene is grown with local reduction way, obtains paper base Graphene electrodes；
(2) paper base graphene-p-type cuprous oxide composite material is prepared.
Computer software used in step (1) of the present invention is CorelDRAW or Photoshop or Adobe
One of illustrator software.
The size of paper base electrode described in step (1) of the present invention is as shown in Fig. 1, and shape is square, and long and width is equal
For 30 mm, white hydrophilic region is divided into three functional areas, wherein border circular areas above is electro-deposition region, diameter 10
Mm, intermediate rectangular region are strip conductor, and a length of 4 mm, width is 3.5 mm, and square area below is conductive contact
Point, it is long and it is wide be 6 mm, the region of surrounding gray is hydrophobic region.
Graphene, preparation are grown using local reduction way in the hydrophilic region of paper base electrode described in step (1) of the present invention
The detailed process of paper base Graphene electrodes is divided into three steps: the first step is to prepare graphene oxide first with Hummers method, so
Afterwards using secondary water as solvent, by the graphene oxide ultrasonic dissolution of preparation, the graphite oxide that concentration is 0.5-2.0 mg/mL is obtained
Alkene dispersion liquid；Second step is obtained in the positive drop coating first step of paper base electrode hydrophilic region first using " drop coating-drying " method
The graphene oxide dispersion obtained, then spontaneously dries at room temperature, and repetitive operation is somebody's turn to do " drop coating-drying " process 3-5 times, finally
In the reverse side repetitive operation of paper base electrode hydrophilic region above-mentioned " drop coating-drying " process 2-4 times；Third step is to utilize in-situ reducing
Method grows graphene, and the paper base electrode obtained in second step is put into the autoclave containing 10-20 mL mixed liquor, described
The ammonium hydroxide that the hydrazine hydrate and mass fraction that mixed liquor is 0.3%-0.5% by mass fraction are 0.05%-0.2% forms, in 80-90
Heating reaction 2-4 h under the conditions of DEG C, after naturally cooling to room temperature, with secondary water washing, and dry 40 under the conditions of 50 DEG C
Min obtains paper base Graphene electrodes.
Paper base graphene-is prepared described in step (2) of the present invention, and the specific method is as follows for p-type cuprous oxide composite material:
Using Ag/AgCl electrode as reference electrode, platinum electrode is used as to electrode, and the middle paper base Graphene electrodes that obtain of step (1) are as work
Make electrode, using three-electrode system, by On Potentiometric Stripping Analysis, in the electro-deposition area deposition octahedral of paper base Graphene electrodes
The p-type cuprous oxide of shape, deposited electrolyte are 0.2-0.6 M by the copper acetate that concentration is 0.01-0.03 M and concentration
The pH of lactic acid composition, electrolyte is adjusted to 9-10 by the sodium hydroxide that concentration is 0.1 M, and deposition voltage is 0.3-0.6 V, deposition
Temperature is 50-70 DEG C, and sedimentation time is 20-40 min, after the completion of deposition, with secondary water washing and by the paper base graphite of acquisition
Alkene-p-type cuprous oxide composite material spontaneously dries at room temperature.
Beneficial effects of the present invention:
(1) prepare paper base graphene-p-type cuprous oxide composite material have big surface area, good electric conductivity and
Stronger visible light absorption capacity is conducive to improve photoelectric conversion efficiency, can be widely applied to area of solar cell.
(2) paper base graphene-p-type cuprous oxide composite material and preparation method thereof is simple, at low cost, and raw material sources are abundant,
It is suitble to mass production, in optical electro-chemistry field application value with higher.
(3) the unique octahedral structure of p-type cuprous oxide is conducive to the contact area for increasing it with reactant, Ke Yiyou
Effect ground is applied to photocatalysis field, improves photocatalysis efficiency.
Figure of description
Fig. 1 is the hydrophobic wax print pattern of paper base electrode.
Specific embodiment
For a better understanding of the present invention, below with reference to the embodiment content that the present invention is furture elucidated, but it is of the invention
Content is not limited solely to the following examples.
Embodiment 1
A kind of preparation method of paper base graphene-p-type cuprous oxide composite material, specific solution are as follows:
(1) paper base Graphene electrodes are prepared: first by Adobe illustrator CS6 software design paper base electrode
Hydrophobic wax print pattern, as shown in Fig. 1, shape is square, it is long and it is wide be 30 mm, white hydrophilic region is divided into
Three functional areas, wherein border circular areas above is electro-deposition region, diameter is 10 mm, and intermediate rectangular region is conduction
Track, a length of 4 mm, width are 3.5 mm, and following square area is conductive contact, it is long and it is wide be 6 mm, surrounding gray
Region be hydrophobic region；Then the color for designed pattern being printed upon on chromatographic paper, and will be printed using wax printer
Manuscript heated at constant temperature 50 seconds, melts wax in 130 DEG C of baking oven, hydrophobic region is formed, finally in the hydrophilic of paper base electrode
Region grows graphene using local reduction way, and detailed process is divided into three steps: the first step is first with Hummers method system
Standby graphene oxide, then using secondary water as solvent, by the graphene oxide ultrasonic dissolution of preparation, acquisition concentration is 1.0 mg/
The graphene oxide dispersion of mL；Second step is using " drop coating-drying " method first in the front drop of paper base electrode hydrophilic region
The graphene oxide dispersion obtained in the first step is applied, is then spontaneously dried at room temperature, repetitive operation should " drop coating-drying " mistake
Journey 4 times, the finally reverse side repetitive operation in paper base electrode hydrophilic region above-mentioned " drop coating-drying " process 2 times；Third step is to utilize
Local reduction way grows graphene, the paper base electrode obtained in second step is put into the autoclave containing 10 mL mixed liquors, institute
The ammonium hydroxide that the hydrazine hydrate and mass fraction that the mixed liquor stated is 0.32% by mass fraction are 0.1% forms, and adds under the conditions of 90 DEG C
2 h of thermal response, after naturally cooling to room temperature, with secondary water washing, and dry 40 min under the conditions of 50 DEG C, obtain paper base stone
Black alkene electrode；
(2) paper base graphene-p-type cuprous oxide composite material is prepared: using Ag/AgCl electrode as reference electrode, platinum electricity
Pole is used as to electrode, and the middle acquisition paper base Graphene electrodes of step (1) pass through current potential using three-electrode system as working electrode
Stripping Analysis Method For Simultaneous, in the p-type cuprous oxide of the electro-deposition area deposition octahedral shape of paper base Graphene electrodes, deposited electrolyte
It is made of the lactic acid that copper acetate and concentration that concentration is 0.02 M are 0.4 M, the hydroxide that the pH of electrolyte is 0.1 M by concentration
Sodium is adjusted to 9, and deposition voltage is 0.4 V, and depositing temperature is 60 DEG C, and sedimentation time is 27 min, and after the completion of deposition, use is secondary
Water washing simultaneously spontaneously dries the paper base of acquisition graphene-p-type cuprous oxide composite material at room temperature.
Embodiment 2
Preparation step is a difference in that with example 1: utilizing local reduction way in the hydrophilic region of paper base electrode in step (1)
Growing hydrazine hydrate and mass fraction that mixed liquor described in the second step of graphene is 0.48% by mass fraction is 0.15%
Ammonium hydroxide composition.
Embodiment 3
Preparation step is a difference in that with example 1: the second that deposited electrolyte described in step (2) is 0.01 M by concentration
The lactic acid that sour copper and concentration are 0.2 M forms.
Embodiment 4
Preparation step is a difference in that with example 1: the pH of deposited electrolyte described in step (2) is 10.
Embodiment 5
Preparation step is a difference in that with example 1: sedimentation time described in step (2) is 40 min.
Embodiment 6
Preparation step is a difference in that with example 1: depositing temperature described in step (2) is 70 DEG C.
Claims (1)
1. a kind of paper base graphene-p-type cuprous oxide composite material preparation method, it is characterized in that the following steps are included:
(1) paper base Graphene electrodes are prepared: passing through the hydrophobic wax print pattern of computer software design paper base electrode first, is made
Computer software is one of CorelDRAW or Photoshop Adobe illustrator software, set
The shape of the paper base electrode of meter is square, it is long and it is wide be 30 mm, white hydrophilic region is divided into three functional areas, wherein
Border circular areas above is electro-deposition region, and diameter is 10 mm, and intermediate rectangular region is strip conductor, and a length of 4 mm is wide
For 3.5 mm, square area below is conductive contact, it is long and it is wide be 6 mm, the region of surrounding gray is hydrophobic region
Domain；Then designed pattern is printed upon on chromatographic paper using wax printer, and by the chromatographic paper printed at 130 DEG C
In baking oven, heated at constant temperature 50 seconds, melt wax, form hydrophobic region, is finally gone back in the hydrophilic region of paper base electrode using in situ
Former method grows graphene, and detailed process is divided into three steps: the first step is to prepare graphene oxide first with Hummers method, so
Afterwards using secondary water as solvent, by the graphene oxide ultrasonic dissolution of preparation, the graphite oxide that concentration is 0.5-2.0 mg/mL is obtained
Alkene dispersion liquid；Second step is obtained in the positive drop coating first step of paper base electrode hydrophilic region first using " drop coating-drying " method
The graphene oxide dispersion obtained, then spontaneously dries at room temperature, and repetitive operation is somebody's turn to do " drop coating-drying " process 3-5 times, finally
In the reverse side repetitive operation of paper base electrode hydrophilic region above-mentioned " drop coating-drying " process 2-4 times；Third step is to utilize in-situ reducing
Method grows graphene, and the paper base electrode obtained in second step is put into the autoclave containing 10-20 mL mixed liquor, described
The ammonium hydroxide that the hydrazine hydrate and mass fraction that mixed liquor is 0.3%-0.5% by mass fraction are 0.05%-0.2% forms, in 80-90
Heating reaction 2-4 h under the conditions of DEG C, after naturally cooling to room temperature, with secondary water washing, and dry 40 under the conditions of 50 DEG C
Min obtains paper base Graphene electrodes；
(2) prepare paper base graphene-p-type cuprous oxide composite material: using Ag/AgCl electrode as reference electrode, platinum electrode is made
For to electrode, the middle acquisition paper base Graphene electrodes of step (1) pass through potentiometric stripping using three-electrode system as working electrode
Analytic approach, in the p-type cuprous oxide of the electro-deposition area deposition octahedral shape of paper base Graphene electrodes, deposited electrolyte is by dense
The lactic acid composition that the copper acetate and concentration that degree is 0.01-0.03 M are 0.2-0.6 M, the pH of electrolyte are 0.1 M's by concentration
Sodium hydroxide is adjusted to 9-10, and deposition voltage is 0.3-0.6 V, and depositing temperature is 50-70 DEG C, sedimentation time 20-40
Min, after the completion of deposition, with secondary water washing and by the paper base of acquisition graphene-p-type cuprous oxide composite material at room temperature from
It is so dry.
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| CN109192799B (en) * | 2018-09-04 | 2020-03-20 | 北京邮电大学 | Graphene-cuprous oxide quantum dot photoelectric detector and preparation method thereof |
| CN109355971A (en) * | 2018-10-25 | 2019-02-19 | 济南大学 | A kind of preparation method growing flower-like copper oxide nanometer material in conductive substrates |
| CN110376259B (en) * | 2019-07-18 | 2021-10-26 | 济南大学 | Preparation method of paper-based photocathode biosensor for detecting microRNA |
| CN111074311B (en) * | 2020-01-06 | 2021-10-26 | 济南大学 | Preparation method of paper-based gold-quadrangular pyramid-shaped cuprous oxide nanocomposite |
| CN114894870B (en) * | 2022-05-13 | 2024-03-01 | 信阳师范学院 | CuNC/graphene paper-based electrode for sensitively detecting phthalein sulfonamides, and preparation method and application thereof |
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| CN106111136A (en) * | 2016-06-21 | 2016-11-16 | 上海交通大学 | A kind of preparation method and applications of the compound octahedra Red copper oxide material of Graphene |
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