CN107393812A - A kind of wafer cleaning method - Google Patents

A kind of wafer cleaning method Download PDF

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Publication number
CN107393812A
CN107393812A CN201710775192.7A CN201710775192A CN107393812A CN 107393812 A CN107393812 A CN 107393812A CN 201710775192 A CN201710775192 A CN 201710775192A CN 107393812 A CN107393812 A CN 107393812A
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CN
China
Prior art keywords
cleaning
cleaning method
chip
wafer
cleaned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710775192.7A
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Chinese (zh)
Inventor
刘旭华
蒋阳波
汪亚军
李君�
刘开源
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Yangtze Memory Technologies Co Ltd
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Yangtze Memory Technologies Co Ltd
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Publication date
Application filed by Yangtze Memory Technologies Co Ltd filed Critical Yangtze Memory Technologies Co Ltd
Priority to CN201710775192.7A priority Critical patent/CN107393812A/en
Publication of CN107393812A publication Critical patent/CN107393812A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention discloses a kind of wafer cleaning method, and methods described includes：Cleaned using one chip board, during cleaning, first cleaned using Ozone, because Ozone has oxidation, the film layer of pollutant or wafer surface can further be aoxidized, when subsequently using the cleaning of SC1 cleaning fluids, it is easier to remove attachment, cleaning performance is more preferable, improves product yield.In addition, the cleaning way of one chip board is once only to clean a chip, cross-infection can be avoided.And the wafer cleaning method of the present invention reduces the use of chemicals, the cost of wafer cleaning is reduced.

Description

A kind of wafer cleaning method
Technical field
The application is related to semiconductor devices cleaning, and in particular to a kind of wafer cleaning method.
Background technology
In semiconductor fabrication process, the cleaning of chip is one of the most frequently used technique.The purpose of the cleaning of chip is Except attachments such as organic matter, metal or other particles of attachment on a surface of a wafer, to avoid attachment can be to follow-up technique Harmful effect.
In the prior art, the method cleaned to chip is usually to utilize SC1 (ammoniacal liquor hydrogen peroxide solution) and HOM (hydrochloric acid ozone mixed liquor and mega) or SPM (sulfuric acid hydrogen peroxide solution) are completed.With the continuous improvement of device integration, This cleaning method can not meet the requirement of cleaning to the cleaning performance of wafer surface particle.
The content of the invention
In view of this, this application provides a kind of wafer cleaning method, it is possible to increase the cleaning to wafer surface attachment Effect, while the usage amount of chemicals can also be reduced, reduce cost.
The embodiments of the invention provide a kind of wafer cleaning method, methods described includes：
In one chip board, chip is cleaned using ozonated deionized water mixed liquor, then, cleaned using SC1 cleaning fluids The chip.
Optionally, the wafer cleaning method is applied to the cleaning before film growth.
Optionally, the wafer cleaning method is applied to the cleaning of photoresistance.
Optionally, the wafer cleaning method is applied to the cleaning after dry etching.
Optionally, the temperature that SC1 cleaning fluids clean is used as 35 DEG C to 80 DEG C.
Optionally, the temperature that SC1 cleaning fluids clean is used as 50 DEG C to 70 DEG C.
Optionally, the time that SC1 cleaning fluids clean is used as 30-124s.
Optionally, O in the Ozone3Concentration be 5ppm to 80ppm.
Optionally, the volume ratio of each composition is NH in the SC1 cleaning fluids4OH:H2O2:H2O=1：1~4：50~200.
Wafer cleaning method provided by the invention, cleaned using one chip board, during cleaning, first entered using Ozone Row cleaning, the film layer of pollutant or wafer surface because Ozone has oxidation, can further be aoxidized, subsequently adopted When being cleaned with SC1 cleaning fluids, it is easier to remove attachment.In addition, the cleaning way of one chip board is once only to clean one Chip, cross-infection can be avoided.
Brief description of the drawings
In order to illustrate more clearly of the technical scheme in the embodiment of the present application, make required in being described below to embodiment Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present application, for For those of ordinary skill in the art, without having to pay creative labor, it can also be obtained according to these accompanying drawings His accompanying drawing.
Fig. 1 is a kind of flow chart of wafer cleaning method provided in an embodiment of the present invention；
Fig. 2 is the effect contrast figure to wafer surface particle cleaning.
Embodiment
Describe the application in detail below with reference to the accompanying drawings and in conjunction with the embodiments.It should be noted that in the feelings not conflicted Under condition, the feature in embodiment and embodiment in the application can be mutually combined.
It should be noted that term used herein above is merely to describe embodiment, and be not intended to restricted root According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative Be also intended to include plural form, additionally, it should be understood that, when in this manual using belong to "comprising" and/or " bag Include " when, it indicates existing characteristics, step, operation, device, component and/or combinations thereof.
For the ease of description, space relative terms can be used herein, as " ... on ", " ... top ", " ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy The spatial relation of sign.It should be appreciated that space relative terms are intended to comprising the orientation except device described in figure Outside different azimuth in use or operation.For example, if the device in accompanying drawing is squeezed, it is described as " in other devices It will be positioned as " under other devices or construction after the device of part or construction top " or " on other devices or construction " Side " or " under other devices or construction ".Thus, exemplary term " ... top " can include " ... top " and " in ... lower section " two kinds of orientation.The device can also other different modes positioning (being rotated by 90 ° or in other orientation), and And respective explanations are made to the relative description in space used herein above.
As background technology is introduced, in the prior art using SC1 and HOM or SPM wafer cleaning method without Method meets the requirement of current cleaning, in order to improve the effect to wafer surface particle cleaning, the present invention using ozone go from Sub- water mixed liquid (Ozone) and the cleaning way of SC1 cleaning fluids, are removed to wafer surface attachment, produce preferably clear Wash effect.Meanwhile HOM the and SPM prices used in cleaning of the prior art are high so that manufacturing cost improves, this Invention utilizes the ozonated deionized water mixed liquor of almost zero cost, it will be apparent that reduces cleaning cost.
It is a kind of flow chart of wafer cleaning method provided in an embodiment of the present invention with reference to figure 1, wherein, the chip is clear Washing method includes：
In one chip board, S1：Chip is cleaned using ozonated deionized water mixed liquor；Then, S2：Cleaned using SC1 Liquid cleans the chip.
In the present invention, cleaned using one chip board, during cleaning, first cleaned using Ozone, due to Ozone has oxidation, can further aoxidize the film layer of pollutant or wafer surface, is subsequently using SC1 cleaning fluids During cleaning, it is easier to remove attachment.In addition, the cleaning way of one chip board is once only to clean a chip, can keep away Exempt from cross-infection.
Simultaneously as the Ozone costs that the present invention uses are very low, the cost of cleaning can be greatly reduced.
Technical scheme for a better understanding of the present invention and technique effect, below in conjunction with specific embodiment to the present invention Technical scheme be described in detail.
Embodiment one
On chip before growing film, it will usually carry out cleaning, to ensure the cleannes of chip, avoid film from giving birth to Exist after length due to not washing clean and caused embedded particles defect clearly, influence the yield of chip.In the present embodiment, it is applied to Wafer cleaning process before film growth, it is particularly suitable for use in by the wafer cleaning before the film growth of furnace tube device.
In the present embodiment, using the cleaning method of the present invention, will can have been formed using Ozone on chip or chip Film layer structure aoxidized, specifically, Ozone can be sprayed in the upper and lower surface of chip so that oxide layer on chip becomes Thickness, or some attaching particles are aoxidized, then, when using SC1 cleaning fluids cleaning chip, the oxide layer is removed Fall, meanwhile, the attachment of wafer surface can be removed in the lump.Before wafer cleaning, if also there are primary oxidation on chip Nitride layer, native oxide can also be got rid of in the lump using SC1 cleaning fluids.
In the present invention, the chip is semi-conducting material, such as can be Si chips, Ge chips, SiGe chips, SOI (silicon-on-insulator, Silicon On Insulator) or GOI (germanium on insulator, Germanium On Insulator) etc.. In other embodiments, the chip can also be the chip for including other elements semiconductor or compound semiconductor, such as GaAs, InP or SiC etc., can also be laminated construction, such as Si/SiGe etc. can be with other epitaxial structures, such as SGOI is (absolutely Germanium silicon on edge body) etc..Normally, chip is monocrystalline silicon.
Chip can be the not no empty piece Jing Guo any processing technology, can also be already formed with film layer structure, these films For Rotating fields such as can be monocrystalline silicon, polysilicon, silica, silicon nitride, the cleaning in the present invention be to carry out new film The technique carried out before is grown, to ensure the cleaning of chip, is easy to grow the film of high quality.The film of growth for example can be Monocrystalline silicon, polysilicon, silica, silicon nitride etc..
In a preferred embodiment, SC1 cleaning fluids are hot SC1 cleaning fluids, and the speed and lifting for being advantageous to improve cleaning are cleaned Effect, hot SC1 cleaning fluids refer to that the temperature range of SC1 cleaning fluids is 35 DEG C to 80 DEG C.In more excellent embodiment, SC1 cleanings The temperature of liquid can be 50 DEG C to 70 DEG C.
Due to being cleaned using hot SC1 cleaning fluids, scavenging period can be shortened, so as to the damage to existing film layer on chip Consume small.
In addition, the formula of SC1 cleaning fluids is NH4OH:H2O2:H2O.In order to improve removals of the SC1 to crystal surface oxides Effect, the embodiment of the present invention can improve NH in SCI4OH volume accounting, specifically, can be by each composition in SC1 cleaning fluids Volume ratio be defined as NH4OH:H2O2:H2O=1：1~4：50~200.The advantage of selection above parameter area is both to remove The particle of wafer surface, but it is few to chip erosion amount itself.
In addition, O in Ozone3Concentration also contribute to wafer surface attachment particle removal effect, in certain limit, O in Ozone3Concentration it is higher, then it is better to the effect of wafer cleaning.Generally, O in Ozone3Concentration can be 5ppm extremely 80ppm, that is to say, that O in Ozone3Concentration be 80ppm, then to crystal top layer attachment particle removal effect relatively more It is good.
In addition, the time that reasonably control SC1 is cleaned, can also reach the purpose thoroughly cleaned, while on chip The erosion of film layer structure is smaller.Specifically, the time range of SC1 cleaning fluids cleaning may be controlled to 30-124s.
In a specific application, chip is entering boiler tube processing procedure growing single-crystal silicon, polysilicon, silica, silicon nitride Before film layer, it can be cleaned using wafer cleaning method provided in an embodiment of the present invention.
In a kind of preferred embodiment, first, in one chip board, O can be used3Concentration is 30ppm Ozone Crystal surface silicon is aoxidized, forms the oxide of silicon.Secondly, the volume ratio of each composition is used as NH4OH:H2O2:H2O=1：2：50 SC1 cleaning fluids, the oxide of crystal surface silicon is cleaned, and to other particles of crystal top layer, such as primary oxidation Thing is cleaned.It is worth noting that, the temperature for using SC1 cleaning fluids to clean can be 50 DEG C for room temperature, so as to shorten SC1 cleanings The time of liquid cleaning, reduce the erosion to the film layer structure on chip.
By comparing the wafer cleaning method of prior art and the present invention, the removal to crystal top layer attaching particles is imitated respectively Fruit, it is found that more preferable using particle removal effect caused by wafer cleaning method provided by the invention.With reference to figure 2, for crystalline substance The effect contrast figure of piece top layer attachment cleaning, A are the effect after being cleaned using SC1 and HOM to wafer surface attachment Figure, B are the design sketch after being cleaned using Ozone and SC1 to wafer surface attachment, wherein, using Ozone and SC1 couples The particle that wafer surface attachment remains after being cleaned is considerably less than to be carried out clearly using SC1 and HOM to wafer surface attachment The particle remained after washing.So wafer cleaning method provided by the invention improves the cleaning performance of wafer surface attachment, from And product yield is improved, meanwhile, reduce the use of the chemicals such as the hydrochloric acid included in HOM, reduce the cost of wafer cleaning.
Embodiment two
Photoresistance (Photo Resist) is the stop sacrifice layer in ion implanting or etching technics, in ion implanting or etching , it is necessary to carry out cleaning after technique is completed, in cleaning, photoresistance is cleaned up, meanwhile, the film under photoresistance Rotating fields loss is less.In the prior art, using SPM and SC1 cleaning way, in which, structure under photoresistance can be caused Loss.
In the present embodiment, using the wafer cleaning method of the present invention, the photoresistance of organic matter can be carried out using Ozone Oxidation, the photoresistance after aoxidizing can be washed easily when SC1 is cleaned, and therefore, be realized using shorter time can The complete removal of photoresistance, avoids the film layer structure under photoresistance from excessively losing.
In the present embodiment, the photoresistance can be the mask layer in ion implantation technology, for example, can be carry out trap doping, Mask layer during source and drain doping etc.；It can also be the mask layer in etching technics, such as can be etching monocrystalline silicon (Si), polycrystalline Silicon (Si), silica (SiO2), silicon nitride (SiN), silicon oxynitride (SION), hard carbon layer (C) etc..
The selection of technological parameter in this implementation is with the description in embodiment one, and here is omitted.
Embodiment three
Dry etching is the method that film etching is carried out by plasma, in etching process, plasma and film React, produce volatile materials, so as to reach the purpose of etching, while etching, the accessory substance of organic matter can be produced, Therefore, after dry etching, it is necessary to carry out cleaning, in cleaning, accessory substance is cleaned up, meanwhile, it is thin The loss of film in itself is less.In the prior art, using SPM and SC1 cleaning way, in which, film can be caused in itself Loss.
In the present embodiment, using the wafer cleaning method of the present invention, the accessory substance of organic matter can be entered using Ozone Row oxidation, the accessory substance after aoxidizing can be washed easily, therefore, using shorter time can when SC1 is cleaned The complete removal of accessory substance is realized, avoids film from excessively losing in itself.
The selection of technological parameter in this implementation is with the description in embodiment one, and here is omitted.
The above described is only a preferred embodiment of the present invention, any formal limitation not is made to the present invention.Appoint What those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the side of the disclosure above Method and technology contents make many possible changes and modifications to technical solution of the present invention, or are revised as the equivalent reality of equivalent variations Apply example.Therefore, every content without departing from technical solution of the present invention, the technical spirit according to the present invention are done to above example Any simple modifications, equivalents, and modifications, still fall within technical solution of the present invention protection in the range of.
The scheme provided above the embodiment of the present application is described in detail, and specific case used herein is to this The principle and embodiment of application are set forth, the explanation of above example be only intended to help understand the present processes and Its core concept；Meanwhile for those of ordinary skill in the art, according to the thought of the application, in embodiment and answer With there will be changes in scope, in summary, this specification content should not be construed as the limitation to the application.

Claims (9)

1. a kind of wafer cleaning method, it is characterised in that methods described includes：
In one chip board, chip is cleaned using ozonated deionized water mixed liquor, then, using described in the cleaning of SC1 cleaning fluids Chip.
2. cleaning method according to claim 1, it is characterised in that the wafer cleaning method grows it applied to film Preceding cleaning.
3. cleaning method according to claim 1, it is characterised in that the wafer cleaning method is applied to the clear of photoresistance Wash.
4. cleaning method according to claim 1, it is characterised in that the wafer cleaning method be applied to dry etching it Cleaning afterwards.
5. according to the cleaning method any one of claim 1-4, it is characterised in that the temperature cleaned using SC1 cleaning fluids Spend for 35 DEG C to 80 DEG C.
6. cleaning method according to claim 5, it is characterised in that use SC1 cleaning fluids clean temperature for 50 DEG C extremely 70℃。
7. cleaning method according to claim 6, it is characterised in that use the time that SC1 cleaning fluids clean as 30- 124s。
8. according to the cleaning method any one of right 1-4, it is characterised in that O in the Ozone3Concentration for 5ppm extremely 80ppm。
9. according to the cleaning method any one of right 1-4, it is characterised in that the body of each composition in the SC1 cleaning fluids Product ratio is NH4OH:H2O2:H2O=1：1~4：50~200.
CN201710775192.7A 2017-08-31 2017-08-31 A kind of wafer cleaning method Pending CN107393812A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110534414A (en) * 2019-09-29 2019-12-03 武汉新芯集成电路制造有限公司 Semiconductor devices and preparation method thereof
CN111105996A (en) * 2020-01-03 2020-05-05 长江存储科技有限责任公司 Cleaning method and cleaning equipment for workpiece to be cleaned
CN111229685A (en) * 2020-01-08 2020-06-05 长江存储科技有限责任公司 Method for removing crystal defects of aluminum bonding pad of integrated circuit
CN111403268A (en) * 2020-04-27 2020-07-10 上海华力微电子有限公司 Cleaning method for reducing loss of grid oxide layer
CN112837995A (en) * 2020-12-28 2021-05-25 苏州恩腾半导体科技有限公司 Wafer surface pollution cleaning method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1133904A (en) * 1994-12-21 1996-10-23 Memc电子材料有限公司 Cleaning process for hydrophobic silicon wafers
CN101217107A (en) * 2007-12-28 2008-07-09 上海新傲科技有限公司 SOI preparation method of bonding and wafer thinning
CN104658886A (en) * 2013-11-22 2015-05-27 台湾积体电路制造股份有限公司 Mechanisms for cleaning wafers
CN105789203A (en) * 2014-12-25 2016-07-20 中芯国际集成电路制造(上海)有限公司 Semiconductor device and manufacturing method therefor, and electronic equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1133904A (en) * 1994-12-21 1996-10-23 Memc电子材料有限公司 Cleaning process for hydrophobic silicon wafers
CN101217107A (en) * 2007-12-28 2008-07-09 上海新傲科技有限公司 SOI preparation method of bonding and wafer thinning
CN104658886A (en) * 2013-11-22 2015-05-27 台湾积体电路制造股份有限公司 Mechanisms for cleaning wafers
CN105789203A (en) * 2014-12-25 2016-07-20 中芯国际集成电路制造(上海)有限公司 Semiconductor device and manufacturing method therefor, and electronic equipment

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110534414A (en) * 2019-09-29 2019-12-03 武汉新芯集成电路制造有限公司 Semiconductor devices and preparation method thereof
CN111105996A (en) * 2020-01-03 2020-05-05 长江存储科技有限责任公司 Cleaning method and cleaning equipment for workpiece to be cleaned
CN111229685A (en) * 2020-01-08 2020-06-05 长江存储科技有限责任公司 Method for removing crystal defects of aluminum bonding pad of integrated circuit
CN111229685B (en) * 2020-01-08 2021-06-01 长江存储科技有限责任公司 Method for removing crystal defects of aluminum bonding pad of integrated circuit
CN111403268A (en) * 2020-04-27 2020-07-10 上海华力微电子有限公司 Cleaning method for reducing loss of grid oxide layer
CN112837995A (en) * 2020-12-28 2021-05-25 苏州恩腾半导体科技有限公司 Wafer surface pollution cleaning method

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