CN107369706A - One kind display electronic device copper alloy electrode and preparation method thereof - Google Patents
One kind display electronic device copper alloy electrode and preparation method thereof Download PDFInfo
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- CN107369706A CN107369706A CN201710582067.4A CN201710582067A CN107369706A CN 107369706 A CN107369706 A CN 107369706A CN 201710582067 A CN201710582067 A CN 201710582067A CN 107369706 A CN107369706 A CN 107369706A
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- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 76
- 238000002360 preparation method Methods 0.000 title claims abstract description 35
- 239000010949 copper Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 45
- 229910052802 copper Inorganic materials 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 239000010408 film Substances 0.000 claims abstract description 27
- 239000011651 chromium Substances 0.000 claims abstract description 22
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000004411 aluminium Substances 0.000 claims abstract description 15
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 30
- 239000000956 alloy Substances 0.000 claims description 30
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000002848 electrochemical method Methods 0.000 claims description 3
- 239000007792 gaseous phase Substances 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 230000004888 barrier function Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 10
- 229910017526 Cu-Cr-Zr Inorganic materials 0.000 description 8
- 229910017810 Cu—Cr—Zr Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910017813 Cu—Cr Inorganic materials 0.000 description 1
- 229910017985 Cu—Zr Inorganic materials 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000036186 satiety Effects 0.000 description 1
- 235000019627 satiety Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
- H01L29/4958—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo with a multiple layer structure
Abstract
The invention belongs to electronic device material preparing technical field, discloses a kind of display electronic device copper alloy electrode and preparation method thereof.Methods described includes following preparation process：(1) copper alloy thin films of 20~1000nm thickness are deposited on substrate as conductive bodies layer；(2) the fine aluminium film of 5~200nm thickness is deposited on copper alloy thin films as buffer stop layer.Alternative carries out 0.5~2h of annealing under conditions of 100~500 DEG C of temperature after the completion of step (1) and step (2).The material composition of the copper alloy thin films includes copper, chromium and zirconium.The advantages of copper alloy electrode prepared by the present invention has high bond strength, and low-resistivity is good with insulating barrier compatibility, and technique is simple, and cost is cheap.
Description
Technical field
The invention belongs to electronic device material preparing technical field, and in particular to one kind display electronic device copper alloy electricity
Pole and preparation method thereof.
Background technology
Large scale, high-resolution, high refresh rate and low-power consumption panel are the trend of Display Technique development, in recent years, with
The development of this trend, signal delay (RC retardation ratio) phenomenon occurs using Al electrode wirings, it is difficult to meet that high-performance shows need
Ask, exploitation height, which leads wiring electrode material, can make device obtain Low ESR delay.Compared with Al, Cu is connected up because of lower resistivity
Higher deelectric transferred performance and lead routing field in height and obtain extensive concern.
Copper makees TFT device electrodes, mainly faces following difficulty at present：(1) copper easily spreads, and causes " Cu-W ore deposit ", causes TFT
Deep acceptor impurity energy level is formed in the insulating barrier or active layer of device, makes device performance degeneration.(2) Cu films be difficult to glass or
Silicon substrate is bonded, and is caused the adhesion of copper electrode poor, is easily come off from substrate.(3) mechanical strength of copper electrode is low.(4) copper electrode
Surface is oxidizable and vulcanizes, and causes interface to deteriorate, and electrode resistance rate rises.
Based on problem above, current solution method mainly has：(1) copper alloy is used to replace fine copper as electrode material.
Although alloying improves the bond strength of electrode and substrate, but in general copper alloy can substantially weaken copper electrode height and lead spy
Property, it is lost ground or even requirement can not be reached.(2) copper seed layer is grown between copper electrode and substrate, for changing
Kind bond strength and electromigration resisting property.The technology of inculating crystal layer is introduced, although object above can be reached, can not still prevent copper
Diffusion and pollution of the atom to backing material.Need separately to add diffusion impervious layer, this can cause technique to complicate, cost drastically on
Rise, be unfavorable for volume production.(3) contact layer is introduced on fine copper electrode, such as uses Cu/Mo, Cu/Mn, Cu/Ti laminated construction.This
Though method can effectively solve the problems, such as that copper spreads to insulating barrier, to solve with substrate adhesion issues, it is necessary to make Mo/
The structures such as Cu/Mo, Mn/Cu/Mn, Ti/Cu/Ti, not only make preparation process become complicated, and it is poor to there is etching between more laminated construction
The opposite sex, later stage etch step is set to become complicated, process is unmanageable and characteristic size can increase and increase with lamination quantity.
A variety of deficiencies for more than, there is provided a kind of technique is simple, cost is cheap, the display of function admirable electronic device copper
Alloy electrode and preparation method thereof is highly significant.
The content of the invention
In order to solve the shortcomings that above prior art and weak point, primary and foremost purpose of the invention is to provide a kind of display
With the preparation method of electronic device copper alloy electrode.
It is a kind of by the display that the above method is prepared electronic device copper conjunction another object of the present invention is to provide
Gold electrode.
The object of the invention is achieved through the following technical solutions：
A kind of preparation method shown with electronic device copper alloy electrode, including following preparation process：
(1) copper alloy thin films of 20~1000nm thickness are deposited on substrate as conductive bodies layer；
(2) fine aluminium (Al) film of 5~200nm thickness is deposited on copper alloy thin films as buffer stop layer.
Preferably, 0.5~2h of annealing is carried out under conditions of 100~500 DEG C of temperature after the completion of step (1), then carried out
Step (2).More preferably annealed under conditions of 300~350 DEG C of temperature.
Preferably, 0.5~2h of annealing is carried out under conditions of 100~500 DEG C of temperature after the completion of step (2).More preferably exist
Annealed under conditions of 300~350 DEG C of temperature.
Preferably, the substrate includes glass substrate, monocrystalline substrate or flexible substrate.
Preferably, the lattice structure of a variety of non-inculating crystal layers in the copper alloy thin films be present.
The material composition of the copper alloy thin films includes copper, chromium and zirconium, and by weight percentage, Cr accounts for the ratio of alloy total amount
Example is that the ratio that 0.1%~0.39%, Zr accounts for alloy total amount is 0.1%~0.5%.Preferably, Cr accounts for the ratio of alloy total amount
The ratio that alloy total amount is accounted for for 0.29%~0.32%, Zr is 0.18%~0.21%.It is highly preferred that Cr accounts for the ratio of alloy total amount
Example is that the ratio that 0.3%, Zr accounts for alloy total amount is 0.2%.
Preferably, with magnetically controlled sputter method, from sputtering method, ion sputtering method, chemical vapor deposition side in step (1)
Method, method of evaporating or electrochemical method deposit copper alloy thin films as conductive bodies layer on substrate.
Preferably, with magnetically controlled sputter method, from sputtering method, ion sputtering method, chemical vapor deposition side in step (2)
Method, method of evaporating or electrochemical method deposit fine aluminium film as buffer stop layer on copper alloy thin films.
Electronic device copper alloy electrode is used in one kind display, is prepared by the above method.
The principle of the invention is：Due to fine copper film be not easy with glass substrate, monocrystalline substrate or flexible substrate occur it is stronger
Bonding action, cause adhesive strength of the fine copper film on above-mentioned substrate very poor, using copper alloy thin films as conductive bodies
The copper alloy electrode technology of layer, while can making the resistivity of electrode close to fine copper, and can ensures that higher electrode attachment is strong
Degree.From Cu-Cr and Cu-Zr alloy binary phase diagramls, room temperature solid solubility of the two kinds of elements of Cr and Zr in Cu is minimum, and will not
Generate intermediate compound.Using the Cu-Cr-Zr alloys target film forming of supersaturated solid solution, satiety is had by the high temperature anneal
Cr and the Zr discharge of sum, cause to be separated with copper, stable oxygen are combined to form in the interface Cr and Zr of film and substrate and oxygen
Compound, the bond strength of electrode and substrate is caused to significantly improve.Aluminum layer is deposited on copper alloy layer and does buffer stop layer, can be with
Solve the adaptation issues of copper grid and device isolation layer well.Avoid because Cu atoms permeatings cause under devices switch ratio
Drop, performance degradation.
Redeposited fine aluminium film after being made annealing treatment to copper alloy thin films conductive bodies, due to the annealed processing of copper alloy thin films
At substrate interface and upper surface all forms Cr and Zr oxide, after redeposited fine aluminium film, annealed processing aluminum layer
It can occur to be bonded well with metal oxide layer, bond strength is substantially increased.
To copper alloy thin films without annealing Direct precipitation fine aluminium buffer stop layer, because Cr and Zr is nearly all arranged
Form stable oxide at substrate interface, alloy-layer upper surface and aluminium lamination interface form many oxide and close key
Close, the electrode of double-decker can be made firmly to be attached on substrate.Finally prepare the good conductive electrode of overall bond strength.
With prior art between Copper thin film electrode and substrate, one layer of other metal or metal-oxide film are added, is made
Compared for transition zone to stop Cu-W ore deposit and improve bond strength, the present invention is using copper alloy thin films as conductive bodies layer, letter
Electrode structure is changed.While copper alloy thin films improve the bond strength with substrate, the high electric conductivity of electrode in turn ensure that.Copper
Alloy firm can form diffusion barrier adhesion layer with spontaneous at substrate interface.Copper alloy layer is non-inculating crystal layer, it is not necessary to is considered
Complicated growth conditions makes preparation technology substantially simplify, cost substantially reduces to control crystal growth direction.Aluminium buffer stop layer
Addition, can effectively stop that Cu spreads, add the adaptability of copper grid, expand the scope of application of copper grid technology.Due to
Alum gate TFT techniques are very ripe, and using copper alloy and the electrode of aluminium double-decker, the height for both having given full play to copper leads spy
Property, the matched well of the electrode and existing TFT techniques is in turn ensure that, so as to save the cost of producing line transformation.
Relative to prior art, the invention has the advantages that and beneficial effect：
Copper alloy electrode prepared by the present invention has high bond strength, and low-resistivity is good with insulating barrier compatibility, technique letter
Singly, the advantages of cost is cheap.
Brief description of the drawings
Fig. 1 is the structural representation of the copper alloy electrode prepared by the present invention；
Fig. 2 is the XRD material phase analysis collection of illustrative plates contrast of the Cu-Cr-Zr alloy firms and fine copper film deposited in embodiment 1
Figure；
Fig. 3 and Fig. 4 is the output characteristic curve figure of the TFT devices prepared in embodiment 8 by gained copper alloy electrode and turned
Move performance diagram.
Embodiment
With reference to embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are unlimited
In this.
Embodiment 1
A kind of preparation method of display electronic device copper alloy electrode of the present embodiment, is carried out as follows：
(1) copper alloy thin films for depositing 20nm thickness in the method for magnetron sputtering on substrate are used as conductive bodies layer；Copper
The material composition of alloy firm is made up of copper, chromium and zirconium, and by weight percentage, the ratio that Cr accounts for alloy total amount is 0.1%, Zr
The ratio for accounting for alloy total amount is 0.5%；Then annealing 0.5h is carried out under conditions of 100 DEG C of temperature.
(2) after the annealing process, the fine aluminium film of 5nm thickness is deposited with magnetically controlled sputter method on copper alloy thin films, and
Annealing 0.5h is carried out under conditions of 100 DEG C of temperature.
The structural representation of copper alloy electrode prepared by the present embodiment is as shown in Figure 1.
The Cu-Cr-Zr alloy firms of the present embodiment step (1) deposition are with the XRD analysis collection of illustrative plates of fine copper film to such as Fig. 2
It is shown, a variety of non-inculating crystal layer crystal phase structures, and the phase structure and fine copper of copper alloy as shown in Figure 2, in copper alloy thin films be present
It is sufficiently close to, so as to ensure that the high electric conductivity of alloy.
Embodiment 2
A kind of preparation method of display electronic device copper alloy electrode of the present embodiment, is carried out as follows：
(1) copper alloy thin films for depositing 1000nm thickness in the method for magnetron sputtering on substrate are used as conductive bodies layer；
The material composition of copper alloy thin films is made up of copper, chromium and zirconium, and by weight percentage, the ratio that Cr accounts for alloy total amount is 0.1%,
The ratio that Zr accounts for alloy total amount is 0.5%；
(2) the fine aluminium film of 200nm thickness is deposited with magnetically controlled sputter method on copper alloy thin films again.
The structural representation of copper alloy electrode prepared by the present embodiment is as shown in Figure 1.
The XRD analysis collection of illustrative plates of the Cu-Cr-Zr alloy firms of the present embodiment step (1) deposition is same as Example 1, and copper closes
A variety of non-inculating crystal layer crystal phase structures in gold thin film be present.
Embodiment 3
A kind of preparation method of display electronic device copper alloy electrode of the present embodiment, is carried out as follows：
(1) copper alloy thin films for depositing 20nm thickness in the method for magnetron sputtering on substrate are used as conductive bodies layer；Copper
The material composition of alloy firm is made up of copper, chromium and zirconium, and by weight percentage, the ratio that Cr accounts for alloy total amount is 0.39%,
The ratio that Zr accounts for alloy total amount is 0.1%；Then annealing 0.5h is carried out under conditions of 100 DEG C of temperature.
(2) after the annealing process, the fine aluminium film of 5nm thickness is deposited with magnetically controlled sputter method on copper alloy thin films.
The structural representation of Novel copper alloy electrode prepared by the present embodiment is as shown in Figure 1.
The XRD analysis collection of illustrative plates of the Cu-Cr-Zr alloy firms of the present embodiment step (1) deposition is same as Example 1, and copper closes
A variety of non-inculating crystal layer crystal phase structures in gold thin film be present.
Embodiment 4
A kind of preparation method of display electronic device copper alloy electrode of the present embodiment, is carried out as follows：
(1) copper alloy thin films for depositing 1000nm thickness in the method for magnetron sputtering on substrate are used as conductive bodies layer；
The material composition of copper alloy thin films is made up of copper, chromium and zirconium, and by weight percentage, the ratio that Cr accounts for alloy total amount is
The ratio that 0.39%, Zr account for alloy total amount is 0.1%.
(2) the fine aluminium film of 200nm thickness is deposited with magnetically controlled sputter method on copper alloy thin films, and in 500 DEG C of temperature
Under conditions of carry out annealing 2h.
The structural representation of new structure copper alloy electrode prepared by the present embodiment is as shown in Figure 1.
The XRD analysis collection of illustrative plates of the Cu-Cr-Zr alloy firms of the present embodiment step (1) deposition is same as Example 1, and copper closes
A variety of non-inculating crystal layer crystal phase structures in gold thin film be present.
Adhesive tape method according to ASTM D3359 descriptions assesses the adhesiveness of film.The detailed process of adhesiveness test is as follows：
First, the grid that 10 × 10 length of sides are 1mm is marked on film with blade；Then, pressure sensitive adhesive tape is covered on grid, stopped
Torn after staying 1min；Finally observe the situation that comes off of film layer.The adhesion of film is evaluated with the expulsion rate of film layer after test
Property.
Above example 1~4 prepare electrode technique and obtained electrode test effect it is as shown in table 1.
The preparation technology of the embodiment 1~4 of table 1 and obtained electrode test effect
As seen from the results in Table 1, conductive electrode produced by the present invention, have low with substrate bond strength height, electrode resistance rate
The characteristics of.
Embodiment 5
The preparation method of display electronic device copper alloy electrode of the present embodiment a kind of, specific preparation technology and is obtained
Electrode test effect is as shown in table 2.
The test effect of the preparation technology of 2 embodiment of table 5 and obtained electrode
As seen from the results in Table 2, conductive electrode produced by the present invention, have low with substrate bond strength height, electrode resistance rate
The characteristics of.
Embodiment 6
The preparation method of display electronic device copper alloy electrode of the present embodiment a kind of, specific preparation technology and is obtained
Electrode test effect is as shown in table 3.
The test effect of the preparation technology of 3 embodiment of table 6 and obtained electrode
As seen from the results in Table 3, conductive electrode produced by the present invention, have low with substrate bond strength height, electrode resistance rate
The characteristics of.
Embodiment 7
The preparation method of display electronic device copper alloy electrode of the present embodiment a kind of, specific preparation technology and is obtained
Electrode test effect is as shown in table 4.
The test effect of the preparation technology of 4 embodiment of table 7 and obtained electrode
As seen from the results in Table 4, conductive electrode produced by the present invention, have low with substrate bond strength height, electrode resistance rate
The characteristics of.
Embodiment 8
The method for the TFT devices that the present embodiment is prepared by copper alloy electrode, is comprised the following steps that：
(1) Cu-Cr-Zr for being sequentially depositing 60nm thickness using mask method magnetically controlled DC sputtering on the glass substrate of cleaning is thin
The Al films of film and 10nm thickness, form grid.Wherein Cu-Cr-Zr thin film sputterings power is 150W, sputtering pressure 2mtorr；Al
The sputtering power of film is 120W, sputtering pressure 1mtorr.
(2) the thick SiOx insulating barriers of 200nm are deposited on grid using PECVD.
(3) active layer is made using the thick IZO of mask method r. f. magnetron sputtering 13nm on the insulating layer, sputtering power is
60W, sputtering pressure 3mtorr.
(4) after the completion of above step, 300 DEG C of annealing 30min under atmospheric atmosphere.
(5) mask method magnetically controlled DC sputtering 120nm on active layer Al is used as source-drain electrode, wherein sputtering power
For 120W, sputtering pressure 1mtorr.
Above after the completion of the TFT devices with copper alloy electrode structure of the present invention, TFT devices are measured using semiconductor parameter instrument
Part performance, obtained output characteristic curve are as shown in Figure 3, it is seen that TFT devices can reach saturation region under different grid voltages, say
This bright grid structure has the defects of less state with interfacial dielectric layer, it is ensured that the normal pinch off of conducting channel, will not cause height
Lead phenomenon.
For the device transfer characteristic curve of measurement as shown in figure 4, by can be calculated, devices switch ratio is 1.12 × 108, saturation
Mobility is 21.67cm2·V-1·s-1, subthreshold swing 0.12V/dec, threshold voltage is -1.59V.Features above parameter
Reach the advanced level of the type device, illustrate that gained copper alloy electrode structure of the invention is advantageous to improve the total of TFT devices
Body performance.
Above-described embodiment is the preferable embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any Spirit Essences without departing from the present invention with made under principle change, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (10)
1. a kind of preparation method shown with electronic device copper alloy electrode, it is characterised in that including following preparation process：
(1) copper alloy thin films of 20~1000nm thickness are deposited on substrate as conductive bodies layer；
(2) the fine aluminium film of 5~200nm thickness is deposited on copper alloy thin films as buffer stop layer.
A kind of 2. preparation method shown with electronic device copper alloy electrode according to claim 1, it is characterised in that：Step
Suddenly 0.5~2h of annealing is carried out under conditions of 100~500 DEG C of temperature after the completion of (1), then carries out step (2).
A kind of 3. preparation method shown with electronic device copper alloy electrode according to claim 1, it is characterised in that：Step
Suddenly 0.5~2h of annealing is carried out under conditions of 100~500 DEG C of temperature after the completion of (2).
A kind of 4. preparation method shown with electronic device copper alloy electrode according to claim 1, it is characterised in that：Institute
Stating substrate includes glass substrate, monocrystalline substrate or flexible substrate.
A kind of 5. preparation method shown with electronic device copper alloy electrode according to claim 1, it is characterised in that：Institute
State the lattice structure that a variety of non-inculating crystal layers in copper alloy thin films be present.
A kind of 6. preparation method shown with electronic device copper alloy electrode according to claim 1, it is characterised in that：Institute
Stating the material composition of copper alloy thin films includes copper, chromium and zirconium, and by weight percentage, the ratio that Cr accounts for alloy total amount is 0.1%
The ratio that~0.39%, Zr account for alloy total amount is 0.1%~0.5%.
A kind of 7. preparation method shown with electronic device copper alloy electrode according to claim 6, it is characterised in that：Cr
The ratio for accounting for alloy total amount is that the ratio that 0.29%~0.32%, Zr accounts for alloy total amount is 0.18%~0.21%.
A kind of 8. preparation method shown with electronic device copper alloy electrode according to claim 7, it is characterised in that：Cr
The ratio for accounting for alloy total amount is that the ratio that 0.3%, Zr accounts for alloy total amount is 0.2%.
A kind of 9. preparation method shown with electronic device copper alloy electrode according to claim 1, it is characterised in that：Step
Suddenly with magnetically controlled sputter method, from sputtering method, ion sputtering method, chemical gaseous phase depositing process, method of evaporating or electrification in (1)
Method deposits copper alloy thin films as conductive bodies layer on substrate；With magnetically controlled sputter method, certainly sputtering side in step (2)
It is thin that method, ion sputtering method, chemical gaseous phase depositing process, method of evaporating or electrochemical method deposit fine aluminium on copper alloy thin films
Film is as buffer stop layer.
10. electronic device copper alloy electrode is used in one kind display, it is characterised in that：Pass through the side described in any one of claim 1~9
Method is prepared.
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