CN107369647B - A kind of LED array substrate and preparation method thereof, display device - Google Patents
A kind of LED array substrate and preparation method thereof, display device Download PDFInfo
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- CN107369647B CN107369647B CN201710758637.0A CN201710758637A CN107369647B CN 107369647 B CN107369647 B CN 107369647B CN 201710758637 A CN201710758637 A CN 201710758637A CN 107369647 B CN107369647 B CN 107369647B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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Abstract
The present invention provides a kind of LED array substrate and preparation method thereof, display device, is related to field of display technology, can solve the high technical problem of the aligning accuracy of light emitting functional layer and substrate.The preparation method of the LED array substrate, comprising: form at least one set of electrode group on the first substrate, the electrode group includes the first electrode of at least three spaced sets；Under magnetic fields, controls the electrode group and be moved to a pixel region, and each first electrode is located in a subpixel area of the pixel region；The light emitting functional layer of corresponding each first electrode is formed on the first substrate for being formed with the first electrode；By on the first substrate the light emitting functional layer and the first electrode be transferred in the second substrate, so that the light emitting functional layer is corresponded and is contacted with the second electrode for being located at subpixel area in the second substrate, formation LED.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of LED array substrate and preparation method thereof, display device.
Background technique
One kind that LED (Light Emitting Diode, light emitting diode) belongs to semiconductor diode, is a kind of dependence
The luminous photoelectric cell of the unilateral conduction of semiconductor PN, LED are widely used illumination members on current worldwide market
Part has many advantages, such as that small in size, brightness is high, power consumption is low, generates heat less, long service life, environmental protection.
LED plays in the electronic product that mobile phone, TV, computer etc. need backlight display indispensable as backlight
Effect.With the continuous diminution of electronic product size, the size of LED chip is needed also can substantially to reduce, lesser
Stronger more stable display brightness is realized in size range.
Micro LED (micro- LED) technology, i.e. LED chip micromation and matrixing technology are referred in a substrate (this
Field technical staff should be understood that the circuit being provided on the substrate for driving LED array, therefore the substrate is also possible to chip)
The LED array of upper integrated high density microsize forms LED array substrate (or being Micro LED chip).Wherein each
Micro- LED (LED particle) can addressing, single-point driving shine, also have high brightness, low-power consumption, super-resolution degree and color saturation
The advantages that, so that it is widely used.
When by the setting to substrate of micro- LED array, usually the light emitting functional layer of micro- LED is prepared in outside, so
After be transferred on substrate, in order to ensure the light efficiency and wavelength of each micro- LED is consistent, need accurately to set light emitting functional layer
It sets in the subpixel area on substrate.It is in the prior art usually that light emitting functional layer is placed by sub-pixel area by manipulator
In domain, this is very high to the aligning accuracy requirement of manipulator, or even to reach micron order, increases technology difficulty.
Summary of the invention
The embodiment of the present invention provides a kind of LED array substrate and preparation method thereof, display device, can solve light-emitting function
The layer technical problem high with the aligning accuracy of substrate.
In order to achieve the above objectives, the embodiment of the present invention adopts the following technical scheme that
In a first aspect, providing a kind of preparation method of LED array substrate, comprising: formed on the first substrate at least one set of
Electrode group, the electrode group include the first electrode of at least three spaced sets；Under magnetic fields, the electrode group is controlled
It is moved to a pixel region, and each first electrode is located in a subpixel area of the pixel region；In shape
At the light emitting functional layer for forming corresponding each first electrode on the first substrate for having the first electrode；By first base
The light emitting functional layer and the first electrode on plate are transferred in the second substrate, are made the light emitting functional layer and are located at institute
The second electrode for stating subpixel area in the second substrate is corresponded and is contacted, and forms LED.
Preferably, at least one set of electrode group is formed on the first substrate, and the electrode group is equidistantly set including at least three
The first electrode set；Under magnetic fields, controls the electrode group and be moved to a pixel region, and each first electrode
In a subpixel area of the pixel region, specifically include: the surface of first substrate by patterning processes or
Evaporation process forms at least one set of electrode group；The opposite sides face of the first substrate is provided with a pair of of magnetic pole, and described
One electrode moves under the action of the magnetic field that the magnetic pole generates, until each first electrode is located at a sub-pixel
When region, the magnetic field that the magnetic pole generates is eliminated, the first electrode is made to stop movement.
Preferably, the opposite sides face of the first substrate is provided with a pair of of magnetic pole, and the first electrode is in the magnetic pole
It is moved under the action of the magnetic field of generation, until when each first electrode is located at a subpixel area, described in elimination
The magnetic field that magnetic pole generates makes the first electrode stop movement, and specifically include: the opposite sides face of the first substrate is provided with
A pair of of magnetic pole, the pixel region are provided with locating piece, close to the locating piece the first electrode the magnetic field work
It is moved under after being contacted with the locating piece, the magnetic pole stops generating magnetic field.
Preferably, the material of the locating piece is inert polymer compound.
Preferably, shining for corresponding each first electrode is formed on the first substrate for being formed with the first electrode
Functional layer specifically includes: first that the covering electrode group is sequentially formed on the first substrate for being formed with the electrode group is mixed
Miscellaneous film layer, Quantum Well film layer and the second doping film layer；Wherein, the first doping film layer and described second adulterates film layer n each other
Type adulterates film layer and p-type doping film layer；Using dry etch process to the first doping film layer, the Quantum Well film layer and institute
It states the second doping film layer to perform etching, forms the light emitting functional layer.
Preferably, by the first substrate the light emitting functional layer and the first electrode be transferred to the second substrate
On, it corresponds the light emitting functional layer with the second electrode for being located at subpixel area in the second substrate, specifically includes:
By nanometer transfer printing technology, by the first substrate the light emitting functional layer and the first electrode be transferred to the second base
On plate, correspond the light emitting functional layer with the second electrode for being located at subpixel area in the second substrate.
Preferably, by transfer technique, by the light emitting functional layer and the first electrode on the first substrate
It is transferred in the second substrate, makes the light emitting functional layer and is located at the second electrode of subpixel area in the second substrate one by one
It is corresponding, it specifically includes: relatively moving the first substrate and the second substrate, make the light emitting functional layer and second electricity
Pole contact；The first substrate and the second substrate are subjected to pixel region contraposition；It pressurizes, makes described to the first substrate
Light emitting functional layer adheres in the second electrode；It takes off from the first substrate.
Based on above-mentioned, it is preferred that the first substrate is glass substrate or silicon substrate.
Second aspect provides a kind of LED array substrate, is prepared by method described in first aspect.
The third aspect provides a kind of display device, including LED array substrate described in second aspect.
LED array substrate provided in an embodiment of the present invention and preparation method thereof, display device, by using magnetism contraposition
Principle is moved to the first electrode on first substrate in preset subpixel area in magnetic fields, and with the second base
Plate is that its reserved position is corresponding in subpixel area, so, after first substrate and the second substrate contraposition, can directly by
First electrode and corresponding light emitting functional layer are transferred at the reserved location of the second substrate, can simply be realized luminous
The accurate contraposition of functional layer and the second substrate.
In addition, preparation method provided by the invention, once can at least complete the transfer and preparation of a pixel unit, and
And it is not necessarily to exactitude position, the transfer of the single sub-pixel of word is realized using manipulator compared to the prior art, contraposition can be reduced
The requirement of precision improves production efficiency, reduces cost.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of flow chart of OLED array preparation method provided in an embodiment of the present invention；
Fig. 2-7 is the preparation process schematic diagram of OLED array provided in an embodiment of the present invention.
Appended drawing reference
100- first substrate；200- the second substrate；10- electrode group；11- first electrode；20- light emitting functional layer；21- first
Adulterate film layer；22- Quantum Well film layer；23- second adulterates film layer；30- second electrode；41,42- magnetic pole；50- locating piece.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of preparation method of LED array substrate, as shown in Figure 1, comprising:
S10, as shown in Fig. 2, forming at least one set of electrode group 10 on first substrate 100, electrode group 10 includes at least three
A spaced set first electrode 11；Under magnetic fields, coordination electrode group 10 is moved to a pixel region, and each first
Electrode 11 is located in a subpixel area of pixel region.
Herein, the generation type of electrode group 10 is not defined, such as patterning processes or vapor deposition work can be passed through
Skill can also be other techniques certainly.Under magnetic fields, the adsorption capacity of electrode group 10 and first substrate 100 is less than magnetic field force,
The mobile direction of first electrode 11 is parallel with the direction in magnetic field.
Wherein, under the action of a magnetic force, multiple if the movement speed of multiple first electrodes 11 in electrode group 10 is identical
11 spaced set of first electrode, when a first electrode 11 is moved to a subpixel area, in an electrode group 10
Each first electrode 11 is moved in corresponding subpixel area.
It will be understood by those skilled in the art that as shown in Fig. 2, to make position of each first electrode 11 in subpixel area
Set it is identical, the distance between two neighboring 11 central point of first electrode S2 should be equal to two neighboring subpixel area central point between
Distance S1.
In addition, for the number of the electrode group 10 formed on first substrate 100, it can be according to specific technique and structure
It is selected, for the number for the first electrode 11 for including in electrode group 10, what it is according to OLED array to be formed includes
The number of subpixel area determine, the corresponding subpixel area of a first electrode 11.
S20, each first electrode 11 is corresponded to as shown in figure 3, being formed on the first substrate 100 for be formed with first electrode 11
Light emitting functional layer 20.
Wherein, the light that corresponding multiple light emitting functional layers 20 issue in pixel region primary colours each other a, for example, picture
It include three light emitting functional layers 20 in plain region, the light that three light emitting functional layers 20 issue is respectively red, green, blue.Alternatively, one
In pixel region include four light emitting functional layers 20, four light emitting functional layers 20 issue light be respectively red, green, blue, it is white, or
The combination of other primary colours.
In addition, not being defined to the mode for forming light emitting functional layer 20, light emitting functional layer 20 can be formed in the prior art
Technique be suitable for the present invention.
S30, as shown in figure 4, by first substrate 100 light emitting functional layer 20 and first electrode 11 be transferred to the second base
On plate 200, light emitting functional layer 20 is made to correspond and connect with the second electrode 30 for being located at subpixel area in the second substrate 200
Touching forms LED.
It will be understood by those skilled in the art that the light emitting functional layer 20 on first substrate 100 is transferred directly to the second base
On plate 200, then, the size of the pixel region on first substrate 100 and the size of the pixel region in the second substrate 200 answer phase
Together.Also, position of the first electrode 11 in the subpixel area of first substrate 100, should be with the sub-pixel area of the second substrate 200
Domain is corresponding for its reserved position.It, can be by light emitting functional layer 20 and the after first substrate 100 and the second substrate 200 are aligned
One electrode 11 is transferred directly to formation LED array substrate at the reserved location in the second substrate 200.Herein, LED array substrate is
To be formed with the substrate of LED array, LED array includes the micro LED (20) of multiple array arrangements.
The preparation method of LED array substrate provided in an embodiment of the present invention makes first by using the principle of magnetism contraposition
First electrode 11 on substrate 100 is moved in preset subpixel area in magnetic fields, and is existed with the second substrate 200
Subpixel area is corresponding for its reserved position, so, can be direct after first substrate 100 and the second substrate 200 are aligned
First electrode 11 and corresponding light emitting functional layer 20 are transferred at the reserved location of the second substrate 200, it can be simple
Realization light emitting functional layer 20 and the second substrate 200 accurate contraposition.
In addition, preparation method provided by the invention, once can at least complete the transfer and preparation of a pixel unit, and
And it is not necessarily to exactitude position, the transfer of the single sub-pixel of word is realized using manipulator compared to the prior art, contraposition can be reduced
The requirement of precision improves production efficiency, reduces cost.
Preferably, step S10 is specifically included:
Step S11 forms at least one set of electrode by patterning processes or evaporation process on the surface of first substrate 100
Group.
For example, forming one group of electrode group 10 by a patterning processes:
One layer of conductive film layer is formed on first substrate 100；
A layer photoresist is formed on conductive film layer；
By expose, develop to be formed photoresist be fully retained part and photoresist remove part；Wherein, photoresist is protected completely
Stay part corresponding with first electrode 11 to be formed.
First electrode 11 is formed by etching, removes remaining photoresist.
It is of course also possible to use evaporation process, forms first electrode 11.
Step S12, as shown in Fig. 2, the opposite sides face of first substrate 100 is provided with a pair of of magnetic pole (41,42), the first electricity
Pole 11 is moved under the action of the magnetic field that magnetic pole (41,42) generates, until each first electrode 11 is located at a subpixel area
When, the magnetic field that magnetic pole (41,42) generate is eliminated, first electrode 11 is made to stop movement.
As shown in Fig. 2, first substrate 100 has two groups of opposite two sides, first electrode 11 is to being provided with magnetic pole (41 or 42)
Side it is mobile.That is, the line of two magnetic poles (41 and 42) is parallel with the mobile route of first electrode 11.
Wherein, for example, can by using evaporation, sputter or other coating methods by thin magnetic material layer (for example, iron
(Fe), cobalt (Co), nickel (Ni), manganese (Mn) or any combination thereof) it is coated on the two sides of first substrate 100.Magnetic pole (41 and 42) can
To be electromagnet, electromagnet energization is to apply electric field.Magnetic pole (41 and 42) is also possible to permanent magnet to apply magnetic field.
Preferably, as shown in figure 5, pixel region is provided with locating piece 50, the first electrode 11 close to locating piece 50 is in magnetic
After contacting under the action of with locating piece 50, magnetic pole (41 and 42) stops generating magnetic field.
Wherein, it will be understood by those skilled in the art that locating piece 50 is for positioning first electrode 11, therefore, the
One magnetic pole 11 should be mobile to the side for being provided with locating piece 50.As shown in figure 5, if the area of subpixel area is greater than first
The area of electrode 11, then the inside of pixel region is arranged in locating piece 50.If the area of subpixel area is equal to first electrode 11
Area, then locating piece 50 close to pixel region edge and pixel region close to locating piece 50 coincident.
In addition, for example magnetic pole (41 and 42) can be made to stop generating magnetic by way of stopping being powered to magnetic pole (41 and 42)
, it is also possible to that magnetic pole (41 and 42) is made to stop generating magnetic field by the way of removing magnetic pole (41 and 42).
Certainly, when forming multiple electrodes group 10 on first substrate 100, corresponding locating piece 50 should also for a, one
The corresponding locating piece 50 of a electrode group 10.
Preferably, the material of locating piece 50 is inert polymer compound.
Specifically, locating piece 50 for example can be polyethylene, polypropylene, polyvinyl chloride, polystyrene, styrene-propene
The high-molecular compounds such as lonitrile copolymer, acrylonitrile-butadiene-styrene copolymer, polymethacrylates.Forming the function that shines
When ergosphere 20, locating piece 50 will not be had a huge impact.
Preferably, step S20 is specifically included:
S21, as shown in fig. 6, sequentially forming the of covering electrode group 10 on the first substrate 100 for being formed with electrode group 10
One doping film layer 21, Quantum Well film layer 22 and the second doping film layer 23；Wherein, the first doping film layer 21 and the second doping film layer 23
N-type doping film layer and p-type doping film layer each other.
S22, the first doping film layer 21, Quantum Well film layer 22 and the second doping film layer 23 are carried out using dry etch process
Etching forms light emitting functional layer 20.
Wherein, LED is mainly made of PN junction, has unilateral conduction, principle of luminosity are as follows: to LED plus forward voltage
Afterwards, from the area P it is injected into the hole in the area N and by the electronics in the injection area P, the area N, the electricity with the area N respectively in a few micrometers near the PN structure
The hole-recombination of son and the area P, electrons and holes generate photon while disappearance, that is, produce the fluorescence of spontaneous radiation.Different
Energy state locating for electrons and holes (band gap) is different in semiconductor material.When the energy that electrons and holes compound tense releases
How many different, the energy between electrons and holes is bigger, and the energy of the photon of generation is higher.The energy of photon in turn with light
Color it is corresponding, since different materials has different band gap, so as to issue the light of different colours.
First doping film layer 21 can be n-type doping film layer, and the second doping film layer 23 is p-type doping film layer at this time；First
Doping film layer 21 is also possible to p-type doping film layer, and the second doping film layer 23 is n-type doping film layer at this time.
Certainly, may be otherwise is to form the first doping by dry etch process after being initially formed the first doping film layer 21
Layer；Quantum Well film layer 22 is re-formed, quantum well layer is formed by dry etch process, the second doping film layer 23 is re-formed, passes through
Dry etch process forms the second doped layer.
In order to simplify technique, the influence to other film layers is reduced, the embodiment of the present invention preferably first adulterates film layer 21, quantum
After trap film layer 22 and the second doping film layer 23 are respectively formed, light emitting functional layer 20 is formed by dry etch process.
Preferably, step S30 is specifically included: by nanometer transfer printing technology, by the light emitting functional layer on first substrate 100
20 and first electrode 11 be transferred in the second substrate 200, make light emitting functional layer 20 be located at the second substrate 200 on sub-pixel area
The second electrode 30 in domain corresponds.
Wherein, the basic idea of nanometer transfer printing technology is by template by pattern transfer to corresponding bottom at present, this
Template can have the template of certain nano graph, be also possible to the figure prepared, and nanometer transfer printing can simply be divided into
Three kinds: hot Cheng Mo, plastic film and micro-contact printing.Hot Cheng Mo: pattern transfer is carried out by polymer.Polymer coating is heated to
After glass transition temperature (Tg), carrying out cooling after contact template makes figure be fixed up.Plastic film: the poly- of one layer of low viscosity is applied
Monomer adduct, under halogen light irradiation, ultraviolet light light can make these monomers that polymerization reaction occur, and be cross-linked with each other to form solid knot
Structure, so that figure be made to remain.Micro-contact printing: first on the printed board by the figure made preparation, later by connecing
Touching makes self assembled monolayer be attached to substrate surface, completes pattern transfer.
It is further preferred that step S30, specifically includes:
S31, as shown in fig. 7, relative movement first substrate 100 and the second substrate 200, keeps light emitting functional layer 20 electric with second
Pole 30 contacts.
Wherein it is possible to be and the first substrate 100 as shown in fig. 7, first substrate 100 and the second substrate 200 are oppositely arranged
Above the second substrate 200, it can also be and be oppositely arranged first substrate 100 and the second substrate 200, and first substrate 100
In the lower section of the second substrate 200, make first substrate 100 and the second substrate 200 to setting, and relatively move first substrate 100
With the second substrate 200, contact second electrode 30 with light emitting functional layer 20.
S32, first substrate 100 and the second substrate 200 are subjected to pixel region contraposition.
For example, it may be making first substrate 100 by the way that contraposition component is arranged on first substrate 100 and the second substrate 200
Pixel region be aligned completely with the pixel region of the light emitting functional layer 20 to be placed of the second substrate 200 so that light emitting functional layer 20
The region reserved with the second substrate 200 is aligned completely.
S33, to 100 temperature-pressure of first substrate, be adhered to light emitting functional layer 20 in second electrode 30.
Wherein, it will be understood by those skilled in the art that when pressurizeing to first substrate 100, it should be noted that set and applied
Pressure range, avoid excessive other film layers caused on first substrate 100 and the second substrate 200 of pressure from damaging.It applies herein
The pressure added is reasonably selected, without limitation according to the structure of each film layer on first substrate 100 and the second substrate 200.
S34, it takes off from first substrate 100.
That is, as shown in figure 4, taking off from formation LED array substrate after first substrate 100.
Based on above-mentioned, glass substrate or silicon substrate is can be used in first substrate 100；The second substrate 200 can be used glass substrate,
Silicon substrate, plastics or other flexible base boards.
The embodiment of the present invention also provides a kind of LED array substrate, and the LED array substrate is prepared by the above method
It arrives.
The beneficial effect for the LED array substrate being prepared by the above method is identical as the beneficial effect of the above method,
Details are not described herein again.
The embodiment of the present invention also provides a kind of display device, including above-mentioned LED array substrate.
Display device of the invention can be top emitting, bottom emitting or both-side emission structure, and the embodiment of the present invention is to this
It is not construed as limiting.
Display device provided by the invention includes above-mentioned LED array substrate, its advantages and above-mentioned LED array substrate
Beneficial effect is identical, and details are not described herein again.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of preparation method of LED array substrate characterized by comprising
At least one set of electrode group is formed on the first substrate, and the electrode group includes the first electricity of at least three spaced sets
Pole；Under magnetic fields, controls the electrode group and be moved to a pixel region, and each first electrode is located at the picture
In one subpixel area in plain region；
The light emitting functional layer of corresponding each first electrode is formed on the first substrate for being formed with the first electrode；
By on the first substrate the light emitting functional layer and the first electrode be transferred in the second substrate, make the hair
Light functional layer is corresponded and is contacted with the second electrode for being located at subpixel area in the second substrate, forms LED.
2. preparation method according to claim 1, which is characterized in that at least one set of electrode group is formed on the first substrate,
The electrode group includes the first electrode of at least three spaced sets；Under magnetic fields, controls the electrode group and be moved to
One pixel region, and each first electrode is located in a subpixel area of the pixel region, specifically includes:
At least one set of electrode group is formed by patterning processes or evaporation process on the surface of first substrate；
The opposite sides face of the first substrate is provided with a pair of of magnetic pole, and the first electrode is in the magnetic field that the magnetic pole generates
The lower movement of effect, until eliminating the magnetic that the magnetic pole generates when each first electrode is located at a subpixel area
, so that the first electrode is stopped movement.
3. preparation method according to claim 2, which is characterized in that the opposite sides face of the first substrate is provided with one
To magnetic pole, the first electrode moves under the action of the magnetic field that the magnetic pole generates, until each first electrode is located at
When one subpixel area, the magnetic field that the magnetic pole generates is eliminated, so that the first electrode is stopped movement, specifically includes:
The opposite sides face of the first substrate is provided with a pair of of magnetic pole, and the pixel region is provided with locating piece, close to described
The first electrode of locating piece is moved under the action of the magnetic field contacted with the locating piece after, the magnetic pole stops producing
Magnetisation field.
4. preparation method according to claim 3, which is characterized in that the material of the locating piece is inert polymer chemical combination
Object.
5. preparation method according to claim 1, which is characterized in that on the first substrate for being formed with the first electrode
The light emitting functional layer for forming corresponding each first electrode, specifically includes:
The first doping film layer, Quantum Well of the covering electrode group is sequentially formed on the first substrate for being formed with the electrode group
Film layer and the second doping film layer；Wherein, the first doping film layer and described second adulterates film layer n-type doping film layer and p each other
Type adulterates film layer；
The first doping film layer, the Quantum Well film layer and the second doping film layer are carved using dry etch process
Erosion, forms the light emitting functional layer.
6. preparation method according to claim 1, which is characterized in that by the light emitting functional layer on the first substrate
And the first electrode is transferred in the second substrate, is made the light emitting functional layer and is located at sub-pixel area in the second substrate
The second electrode in domain is corresponded and is contacted, and is formed LED, is specifically included:
By nanometer transfer printing technology, by the first substrate the light emitting functional layer and the first electrode be transferred to
On two substrates, the light emitting functional layer is made to correspond and connect with the second electrode for being located at subpixel area in the second substrate
Touching.
7. preparation method according to claim 6, which is characterized in that, will be on the first substrate by transfer technique
The light emitting functional layer and the first electrode are transferred in the second substrate, are made the light emitting functional layer and are located at described second
The second electrode of subpixel area is corresponded and is contacted on substrate, is specifically included:
The first substrate and the second substrate are relatively moved, contacts the light emitting functional layer with the second electrode；
The first substrate and the second substrate are subjected to pixel region contraposition；
It pressurizes to the first substrate, makes the light emitting functional layer adherency in the second electrode；
It takes off from the first substrate.
8. preparation method according to claim 1-7, which is characterized in that the first substrate be glass substrate or
Silicon substrate.
9. a kind of LED array substrate, which is characterized in that be prepared by the described in any item methods of claim 1-8.
10. a kind of display device, which is characterized in that including LED array substrate as claimed in claim 9.
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| WO2019173986A1 (en) | 2018-03-14 | 2019-09-19 | Boe Technology Group Co., Ltd. | Method of transferring a plurality of micro light emitting diodes to a target substrate, array substrate and display apparatus thereof |
| CN111180379B (en) * | 2019-12-26 | 2022-05-13 | 华灿光电(苏州）有限公司 | Micro light-emitting diode epitaxial wafer, display array and manufacturing method thereof |
| CN118016611A (en) * | 2024-04-08 | 2024-05-10 | 惠科股份有限公司 | Display panel and display device |
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| CN106206611A (en) * | 2016-08-19 | 2016-12-07 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display device |
| CN106571371A (en) * | 2015-10-09 | 2017-04-19 | 群创光电股份有限公司 | Array substrate, application device of array substrate, and assembling method of array substrate |
| CN107026124A (en) * | 2014-11-27 | 2017-08-08 | 广州硅芯电子科技有限公司 | Manufacture the method and miniature light-emitting diode display of miniature light-emitting diode display |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107026124A (en) * | 2014-11-27 | 2017-08-08 | 广州硅芯电子科技有限公司 | Manufacture the method and miniature light-emitting diode display of miniature light-emitting diode display |
| CN106571371A (en) * | 2015-10-09 | 2017-04-19 | 群创光电股份有限公司 | Array substrate, application device of array substrate, and assembling method of array substrate |
| CN106206611A (en) * | 2016-08-19 | 2016-12-07 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display device |
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