CN107367330B - Infrared sensor structure and preparation method thereof, detection system - Google Patents
Infrared sensor structure and preparation method thereof, detection system Download PDFInfo
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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Abstract
The present invention provides a kind of infrared sensor structures of multiband output, with multiple probe units, each probe unit has sensing arrangement, frequency spectrum filter structure is provided at the top of each sensing arrangement, selectivity for incident light penetrates, to realize each probe unit to the selective absorbing of incident light；The lambda1-wavelength that property selected by the frequency spectrum filter structure of at least part probe unit penetrates in multiple probe units is not identical.The present invention filters out unwanted incident light using different frequency spectrum filter structures for each probe unit, to which selectivity penetrates required incident light, due to different frequency spectrum filter structures, so that the lambda1-wavelength that probe unit is detected is not identical, to realize the effectively targetedly detection of the infrared incident light progress to different-waveband, the sensitivity of detection is improved.
Description
Technical field
The present invention relates to image sensor technologies fields, and in particular to a kind of infrared sensor structure and preparation method thereof,
Detection system.
Background technique
Conventional infrared sensor output signal is grey scale signal, be only capable of displaying the strong of infra-red absorbance signals in certain wave band and
It is weak, it cannot show the power of some audio range frequency signal, while output signal is grey scale signal, intuitive is poor, it is not easy to
It is intuitively observed and is judged by real user.
Summary of the invention
In order to overcome the above problems, the present invention is intended to provide a kind of infrared sensor structure and infrared detection system, utilize
Frequency spectrum filter structure can be finely divided each wave band of infrared light and targetedly detect, and improve red to different-waveband
The detectivity of outer light, and can intuitively observe detection result.
In order to achieve the above object, the present invention provides a kind of infrared sensor structures of multiband output, have multiple
Probe unit, each probe unit have sensing arrangement, wherein frequency spectrum filtering knot is provided at the top of each sensing arrangement
Structure, the selectivity for incident light penetrates, to realize each probe unit to the selective absorbing of incident light；Multiple detections are single
The lambda1-wavelength that property selected by the frequency spectrum filter structure of at least part probe unit penetrates in member is not identical.
Preferably, at least part probe unit constitutes one group of probe unit and combines, more in infrared sensor structure
The group probe unit combination is arranged in arrays, and in each group of probe unit combination, probe unit is according to frequency spectrum filter structure institute
The size sequential of the lambda1-wavelength selectively penetrated.
Preferably, each probe unit has resonant cavity, and sensing arrangement is set to above resonant cavity；In sensing arrangement bottom
It is additionally provided with the first bottom dielectric layer；Top of first bottom dielectric layer as resonant cavity；The thickness table of first bottom dielectric layer
It is shown as d1=(λ/4-d)/n1, wherein the thickness of the first bottom dielectric layer of d1, n1 are the refractive index of the first bottom dielectric layer, and d is
The thickness of top dielectric layer.
Preferably, each probe unit has resonant cavity, and sensing arrangement is set to above resonant cavity；It is set in resonant cavity bottom
It is equipped with the second bottom dielectric layer；Bottom of second bottom dielectric layer as resonant cavity；The thickness of second bottom dielectric layer is expressed as
D2=(λ/4-d)/(n2-1), d2 are the thickness of the second bottom dielectric layer, and n2 is the refractive index of the second bottom dielectric layer, and d is top
The thickness of portion's dielectric layer.
Preferably, each probe unit has resonant cavity, and sensing arrangement is set to above resonant cavity；In sensing arrangement bottom
It is additionally provided with the first bottom dielectric layer, and resonant cavity bottom is provided with the second bottom dielectric layer；First bottom dielectric layer is made
For the top of resonant cavity, and bottom of second bottom dielectric layer as resonant cavity；First bottom dielectric layer is as resonant cavity
Top；First bottom dielectric layer with a thickness of d1=(λ/4-d-d2 (n2-1))/n1, the second bottom dielectric layer with a thickness of d2=
(λ/4-d-d1n1)/(n2-1), wherein d1 is the thickness of the first bottom dielectric layer, and d2 is the thickness of the second bottom dielectric layer, n1
For the refractive index of the first bottom dielectric layer, n2 is the refractive index of the second bottom dielectric layer, and d is the height of top dielectric layer.
Preferably, the frequency spectrum filter structure with certain gap covering and is enclosed in above sensing arrangement.
Preferably, the material of the frequency spectrum filter structure used corresponding to each probe unit is not identical.
Preferably, the material of the frequency spectrum filter structure is Si, Ge, GeSi or ZnSe or in which at least two kinds of combination
The composite material of composition；Alternatively, be host element with one of Si, Ge, Zn, Se, the binary or polynary multiple formed by ion implanting
Condensation material.
Preferably, include electrode layer, sensitive material in the sensing arrangement, also, also set above sensitive material
It is equipped with filter layer, the incident light of non-targeted wavelength is fallen for selective filter.
It preferably, further include metal interconnecting layer, positioned at the bottom of multiple probe units, corresponding to the interconnection below resonant cavity
It is provided with metallic reflector in layer, is used for resonance intracavity reflecting incident light.
Preferably, be higher by the minimum bottom of the sensor structure at the top of the resonant cavity, the sensor structure according to
That a part being higher by the top of the attached resonant cavity, which is formed, has upward convex bottom, and the bottom of that upward convex a part is institute
State the top of that a part that resonant cavity is higher by.
In order to achieve the above object, the present invention also provides a kind of infrared detection system comprising: above-mentioned infrared sensing
Device structure, color valuator, pixel synthesizer；Wherein, color valuator inhales probe units multiple in infrared sensor structure
The incident light frequency of receipts assigns base color respectively, pixel synthesizer according to probe unit be formed by different base colors with
And the signal strength that is detected of probe unit synthesizes the color value of corresponding probe unit.
Preferably, at least part probe unit constitutes one group of probe unit and combines, more in infrared sensor structure
The group probe unit combination is arranged in arrays, saturating according to property selected by frequency spectrum filter structure in each group of probe unit combination
The size sequential for the lambda1-wavelength crossed；
Color valuator assigns the probe unit in each group of probe unit combination to different base colors respectively, each
Corresponding base color formation base color combination in group probe unit combination, each base color combination and each group of spy
Unit combination is surveyed to correspond.
Preferably, in base color combination, different base colors includes red, green, blue, light blue, each group of detection
Include four probe units in unit combination, color valuator by red, green, blue, it is light blue assign this four probe units respectively, and
And this four probe units are according to 2 × 2 matrix arrangements.
Preferably, the pixel synthesizer sets the synthesis region of each probe unit as 2 × 2 comprising the probe unit
Matrix synthesizes the color value of the probe unit using four different base colors in this 2 × 2 matrix.
Preferably, setting pixel synthesizer is to the scanning direction of probe unit, the synthesis region of each probe unit be with
2 × 2 matrixes of the probe unit along scanning direction and the direction arrangement vertical with scanning direction.
Preferably, the vertical direction in the described and scanning direction in each synthesis region is identical.
In order to achieve the above object, the present invention also provides a kind of preparation method of infrared sensor, infrared sensing utensils
There are multiple probe units, each probe unit has sensing arrangement, is provided with resonant cavity below sensing arrangement, ties in sensing
Frequency spectrum filter structure is provided at the top of structure, the selectivity for incident light penetrates, to realize each probe unit to incidence
The selective absorbing of light；What property selected by the frequency spectrum filter structure of at least part probe unit penetrated in multiple probe units enters
It is not identical to penetrate optical wavelength；Wherein, the lambda1-wavelength penetrated according to property selected by each frequency spectrum filter structure from be short to it is long successively
Prepare the probe unit；If the lambda1-wavelength that property selected by each frequency spectrum filter structure penetrates is divided into N kind, correspond to N class
Frequency spectrum filter structure further corresponds to N class probe unit；It specifically includes:
Step 01: providing a substrate, substrate surface is formed with metal interconnecting layer；Metal interconnecting layer has top layer dielectric layer；
Step 02: etching multiple grooves in top layer dielectric layer, the metal interconnecting layer of bottom is exposed, for shape
At the resonant cavity of multiple probe units；
Step 03: the first sacrificial layer is filled in multiple grooves；
Step 04: on the first sacrificial layer and forming multiple sensing arrangements in top layer dielectric layer；Each sensing arrangement is corresponding
Above corresponding groove；
Step 05: the second sacrificial layer is formed on multiple sensing arrangements and the top layer dielectric layer of exposure, patterning second is sacrificial
Domestic animal layer forms multiple second and sacrifices layer pattern, and each second sacrifice layer pattern envelopes corresponding sensing arrangement；After patterning
The height of second sacrificial layer is equal to the vertical range between frequency spectrum filter structure and sensing arrangement；
Step 06: distinguishing one in the second sacrificial layer patterned surfaces and side wall of the 1st class probe unit to N class probe unit
One is correspondingly formed the 1st class frequency spectrum filter structure to N class frequency spectrum filter structure；Also, in the 1st class frequency spectrum filter structure to N
Relief hole is respectively formed in class frequency spectrum filter structure；N >=1 and be integer；
Step 07: the first sacrificial layer and the second sacrificial layer are removed, thus in each biography through release process by relief hole
Feel and form resonant cavity below structure, forms cavity between frequency spectrum filter layer and sensing arrangement.
Preferably, specific for preparing for the frequency spectrum filter structure of the respective class of every a kind of probe unit in the step 06
Include:
Step 061: forming K class frequency spectrum filter layer over the entire substrate；K is positive integer, and is 1~N-1；
Step 062: the K class frequency spectrum filter layer except removal K class probe unit；
Step 063: using exposure mask, K class probe unit is sheltered from；
Step 064:K progressively increases 1, repeats step 061~062, until completing the 1st class frequency spectrum filter structure to N class frequency spectrum
Filter structure.
Preferably, the step 02 is between 03 further include: forms the second bottom dielectric layer in channel bottom；Second bottom
Bottom of the dielectric layer as resonant cavity；Second bottom dielectric layer with a thickness of d2=(λ/4-d)/(n2-1) wherein, d2 second
The thickness of bottom dielectric layer, n2 are the refractive index of second bottom dielectric layer, and d is the thickness of top dielectric layer, at this time resonant cavity
The thickness d that height is equal to top dielectric layer subtracts the thickness d 2 of the second bottom dielectric layer.
Preferably, the step 03 is between 04 further include: the shape on the first sacrificial layer for corresponding to sensing arrangement bottom
At the first bottom dielectric layer；Top of first bottom dielectric layer as resonant cavity；First bottom dielectric layer with a thickness of d1=(λ/
4-d)/n1, wherein d1 is the thickness of the first bottom dielectric layer, and n1 is the refractive index of the first bottom dielectric layer, and d is top medium
The thickness of layer, the height of resonant cavity is equal to the thickness d of top dielectric layer at this time.
Preferably, step 03 specifically includes: filling full first sacrificial layer in the trench, and makes the first sacrificial layer and trench top
Portion flushes, and then, redeposited one layer of new sacrifice layer at the top of sacrificial layer is higher by the top of the groove at the top of new sacrifice layer；Also, it is new
The sum of the thickness of sacrificial layer and the height of resonant cavity are equal to the 1/4 of the wavelength X for the incident light being incident in resonant cavity.
The present invention filters out unwanted incident light using different frequency spectrum filter structures for each probe unit, from
And selectivity penetrates required incident light, due to different frequency spectrum filter structures, so that the lambda1-wavelength that probe unit is detected
It is not identical, effectively targetedly detection is carried out to the infrared incident light of different-waveband to realize, improves the sensitive of detection
Degree.Further, in order to further enhance the selective absorbing to lambda1-wavelength, below different spectral filter structure
Resonant cavity carries out the Matching and modification of resonant cavity height, such as certain thickness is arranged in sensing arrangement bottom and/or resonant cavity bottom
Certain refractive index dielectric layer, realize effective reflection to incident light using being superimposed for thickness of dielectric layers and resonant cavity height
And it effectively avoids scattering, to improve to incident light selective absorbing, improves signal strength；Also, it is directed to different spectral mistake
The probe unit of filter structure assigns different base colors, and the signal strength or weakness and base color further according to detection are calculated finally
The corresponding color value of pixel, so as to intuitively observe and judge.
Detailed description of the invention
Fig. 1 is the block diagram of the infrared detection system of a preferred embodiment of the invention
Fig. 2 is that the matrix that the probe unit combination for being endowed base color of a preferred embodiment of the invention is constituted shows
It is intended to
Fig. 3 is the schematic diagram of the infrared sensor structure of a preferred embodiment of the invention
Fig. 4 is the flow diagram of the preparation method of the infrared sensor structure of a preferred embodiment of the invention
Fig. 5~11 are each preparation step schematic diagram of the preparation method of the infrared sensor structure of Fig. 4
Figure 12 is the schematic diagram of the infrared sensor structure of another preferred embodiment of the invention
Specific embodiment
To keep the contents of the present invention more clear and easy to understand, below in conjunction with Figure of description, the contents of the present invention are made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, general replacement known to those skilled in the art
It is included within the scope of protection of the present invention.
The infrared sensor structure of multiband output of the invention, has multiple probe units, each probe unit has
Sensing arrangement is provided with frequency spectrum filter structure at the top of each sensing arrangement, and the selectivity for incident light penetrates, thus
Realize each probe unit to the selective absorbing of incident light；The frequency spectrum mistake of at least part probe unit in multiple probe units
It is not identical to filter the lambda1-wavelength that property selected by structure penetrates.
In addition, infrared detection system of the invention, comprising: infrared sensor structure, color valuator, pixel synthesizer；
The incident light frequency that probe units multiple in infrared sensor structure absorb is assigned to base color respectively using color valuator,
It is strong that the signal that different base color and probe unit are detected is formed by according to probe unit using pixel synthesizer
It spends to synthesize the color value of corresponding probe unit, so that the chromaticity diagram of the signal for different frequency range is finally obtained, it can be more
Intuitively observe and judge the signal strength or weakness of each wave band.
A kind of preparation method of infrared sensor of the invention enters according to what property selected by each frequency spectrum filter structure penetrated
It penetrates optical wavelength and is sequentially prepared the probe unit from length is short to；If the incident light wave that property selected by each frequency spectrum filter structure penetrates
Length is divided into N kind, corresponds to N class frequency spectrum filter structure, further corresponds to N class probe unit；It specifically includes:
Step 01: providing a substrate, substrate surface is formed with metal interconnecting layer；Metal interconnecting layer has top layer dielectric layer；
Step 02: etching multiple grooves in top layer dielectric layer, be used to form the resonant cavity of multiple probe units；
Step 03: the first sacrificial layer is filled in multiple grooves；
Step 04: on the first sacrificial layer and forming multiple sensing arrangements in top layer dielectric layer；Each sensing arrangement is corresponding
Above corresponding groove；
Step 05: the second sacrificial layer is formed on multiple sensing arrangements and the top layer dielectric layer of exposure, patterning second is sacrificial
Domestic animal layer forms multiple second and sacrifices layer pattern, and each second sacrifice layer pattern envelopes corresponding sensing arrangement；After patterning
The height of second sacrificial layer is equal to the vertical range between frequency spectrum filter structure and sensing arrangement；
Step 06: distinguishing one in the second sacrificial layer patterned surfaces and side wall of the 1st class probe unit to N class probe unit
One is correspondingly formed the 1st class frequency spectrum filter structure to N class frequency spectrum filter structure；Also, in the 1st class frequency spectrum filter structure to N
Relief hole is respectively formed in class frequency spectrum filter structure；N >=1 and be integer；
Step 07: the first sacrificial layer and the second sacrificial layer are removed, thus in each biography through release process by relief hole
Feel and form resonant cavity below structure, forms cavity between frequency spectrum filter layer and sensing arrangement.
Below in conjunction with attached drawing 1~12 and specific embodiment, invention is further described in detail.It should be noted that attached drawing
It is all made of very simplified form, using non-accurate ratio, and only to facilitate, clearly reach aid illustration the present embodiment
Purpose.
Referring to Fig. 1, a kind of infrared detection system of the present embodiment, comprising: infrared sensor structure, color valuator,
Pixel synthesizer.
In the present embodiment, the incident light frequency that color valuator absorbs probe units multiple in infrared sensor structure divides
Not Fu Yu base color, pixel synthesizer is formed by different base color and probe unit according to probe unit and detected
To signal strength synthesize the color value of corresponding probe unit.
It is combined referring to Fig. 2, setting one group of probe unit at least part probe unit, in infrared sensor structure
The combination of multiple groups probe unit is arranged in arrays, is here 2 × 4 matrixes, and one shares 8 probe unit combinations, and one shares 32 spies
Survey unit；In the combination of each group of probe unit, the size of the lambda1-wavelength penetrated according to property selected by frequency spectrum filter structure according to
Sequence arrangement；Color valuator assigns the probe unit in each group of probe unit combination to different base colors respectively, each
Corresponding base color formation base color combination in group probe unit combination, each base color combination and each group of spy
Unit combination is surveyed to correspond.In the present embodiment, as shown in Fig. 2, base color combination in, different base colors include red R,
Green G, indigo plant B, light blue b, include four probe units in the combination of each group of probe unit, and color valuator is by red R, green G, indigo plant B, shallowly
Blue b assigns this four probe units respectively, and this four probe units are according to 2 × 2 matrix arrangements.
Here, referring to Fig. 2, pixel synthesizer sets the synthesis region of each probe unit as comprising the detection
2 × 2 matrixes of unit synthesize the color value of the probe unit using four different base colors in this 2 × 2 matrix.According to
It is secondary to analogize, complete the color value synthesis of each probe unit in entire infrared sensor structure.
Pixel synthesizer is set to the scanning direction of probe unit, the synthesis region of each probe unit is with the detection list
Member in the present embodiment, can set each synthesis along 2 × 2 matrixes of scanning direction and the arrangement of vertical with scanning direction direction
It is identical as the vertical direction in scanning direction in region.
Referring to Fig. 3, the infrared sensor structure that the multiband of the present embodiment exports, there are multiple probe units, in Fig. 3
It shows and is illustrated for two probe units, but this is not used in and limits the scope of the invention；Multiple probe units are equal
It with resonant cavity Q, please refers to Fig. 2 and combines Fig. 2, four probe units constitute a probe unit combination, detection list here
The different probe unit of the lambda1-wavelength that tool is penetrated there are four property selected by frequency spectrum filter structure 03 in member combination, infrared sensing
The combination of multiple groups probe unit is arranged in arrays in device structure, and in each group of probe unit combination, probe unit is filtered according to frequency spectrum
Property selected by structure 03 penetrate lambda1-wavelength size sequential, here, referring to Fig. 3, frequency spectrum filter structure 03 with
Certain gap covers and is enclosed in 02 top of sensing arrangement, the frequency spectrum filter structure 03 corresponding to the use of each probe unit
Material is not identical.Preferably, the material of frequency spectrum filter structure 03 is Si, Ge, GeSi or ZnSe or in which at least two kinds of combination
The composite material of composition, can also use with one of Si, Ge, Zn, Se as host element, the binary that is formed by ion implanting or
Multi-element composite material.In addition, as shown in figure 3, the bottom for being located at multiple probe units is provided with metal interconnecting layer 01, metal interconnection
Layer 01 has spacer medium 011, the metal 012 between spacer medium 011, positioned at the top layer of 01 top of metal interconnecting layer
Dielectric layer 015, the top layer contact hole 014 in top layer dielectric layer 015.Also, correspond to the metal interconnection below resonant cavity Q
It is provided with metallic reflector 013 in layer 01, for emitting incident light into resonant cavity Q.In another embodiment of the present invention,
Figure 12 is please referred to, the minimum bottom (such as 022 bottom of electrode layer) of sensor structure 02, sensor are higher by the top of resonant cavity Q
Structure 02, which depends on that a part being higher by the top of resonant cavity Q and formed, has upward convex bottom, the bottom of that upward convex a part
Portion is the top of that a part that resonant cavity Q is higher by.
Referring to Fig. 3, being sensing arrangement 02 above resonant cavity Q in the present embodiment, sensing arrangement 02 here is microbridge
Structure, may include in the micro-bridge structure of the present embodiment electrode layer 022, sensitive material 023, upper release guard layer 025 and under
Release guard layer 021.It is of course also possible to contact block is arranged on top layer contact hole 014, then electrode layer 022 and top layer contact block
It is in contact, while contact block also acts as the supporting role to micro-bridge structure.Also, in sensitive material in the present embodiment
023 top is also provided with filter layer 026, and the incident light of non-targeted wavelength is fallen for selective filter.Here, in filter layer
One layer of intermediate release guard layer 024 is also set up between 026 and sensitive material 023.Intermediate release guard layer 024, which is covered on down, to be released
It puts on protective layer 021, electrode layer 022 and sensitive material 023.In addition, this layer of filter layer 026 can also transfer heat to sensitivity
Material layer 023；Sensitive material 023 can export supplementary signal after obtaining heat, be conducive to the enhancing of final output signal, mention
The utilization rate of high incident light.
In addition, in order to realize the absorption of the incident light to bigger wavelength, needing to increase resonant cavity Q high referring to Fig. 3
Degree, but this volume that will lead to probe unit increases, and is directed to bigger wavelength, so that the height of the resonant cavity of probe unit
Have to expand hundred times, eventually affect the integrated level and sensitivity of entire infrared sensor structure, therefore, is avoiding excessively
Under the premise of increasing volume, in the present embodiment, the first bottom dielectric layer 04 is also provided in 02 bottom of sensing arrangement；First
Top of the bottom dielectric layer 04 as resonant cavity Q；If the refractive index of the first bottom dielectric layer be n1, top dielectric layer with a thickness of
D, the height of resonant cavity is equal to the thickness d of top dielectric layer at this time, the first bottom dielectric layer with a thickness of d1, then the first bottom is situated between
Thickness d 1=(λ/4-d)/n1 of matter layer.
Alternatively, being also provided with the second bottom dielectric layer 05 in the bottom resonant cavity Q；Second bottom dielectric layer 05 is as humorous
The bottom of vibration chamber Q；If the refractive index of the second bottom dielectric layer 05 is n2, top dielectric layer 015 with a thickness of d, resonant cavity Q at this time
Height be equal to the thickness d of top dielectric layer 015 and subtract the thickness d 2 of the second bottom dielectric layer 05, then the second bottom dielectric layer 05
Thickness d 2=(λ/4-d)/(n2-1).
Alternatively, being additionally provided with the first bottom dielectric layer 04 in 02 bottom of sensing arrangement, and it is provided in the bottom resonant cavity Q
Second bottom dielectric layer 05；In this way, top of first bottom dielectric layer 04 as resonant cavity Q, and the second bottom dielectric layer 05
Bottom as resonant cavity Q；Top of first bottom dielectric layer 04 as resonant cavity Q；If the refraction of the first bottom dielectric layer 04
Rate is n1, the first bottom dielectric layer 04 with a thickness of d1, if the refractive index of the second bottom dielectric layer 05 is n2, top dielectric layer
015 height is d, the second bottom dielectric layer 05 with a thickness of d2, the height of resonant cavity Q is equal to top dielectric layer 015 at this time
Thickness d subtracts the thickness d 2 of the second bottom dielectric layer 05, then, and thickness d 1=(λ/4-d-d2 (n2- of the first bottom dielectric layer 04
1))/n1, thickness d 2=(λ/4-d-d1n1)/(n2-1) of the second bottom dielectric layer 05.
Referring to Fig. 4, being pressed for the preparation method of the above-mentioned infrared sensor structure of the present embodiment referring to Fig. 3
Probe unit is sequentially prepared from length is short to according to the lambda1-wavelength that property selected by each frequency spectrum filter structure 03 penetrates；Incorporated by reference to figure
2, in the combination of each probe unit, the lambda1-wavelength that property selected by each frequency spectrum filter structure 03 penetrates is divided into 4 kinds, corresponds to
4 class probe units；Due to being to combine composition by 8 probe units of 2 × 4 matrixes in the infrared sensor structure of the present embodiment
, it is therefore, identical for the preparation method of each probe unit combination, it can be prepared simultaneously for this 8 probe unit combinations
And the probe unit for the identical lambda1-wavelength of absorption in this 8 probe unit combinations is also to prepare simultaneously.Specifically
Include: following steps:
Step 01: referring to Fig. 5, providing a substrate 00,00 surface of substrate is formed with metal interconnecting layer 01；Metal interconnecting layer
01 has top layer dielectric layer 015；
Specifically, substrate 00 can be silicon substrate.The forming method of metal interconnecting layer 01 can use conventional interconnection technique, this
In repeat no more.The preparation of metal interconnecting layer 01 can be initially formed metal pattern, then filling isolation is situated between metal pattern
Matter 011 can also be initially formed spacer medium 011, and after etching groove, metal is filled in groove, to form one layer of gold
Belong to interconnection layer 01, multiple layer metal interconnection layer can also be formed in this way.
The top of metal interconnecting layer 01 is top dielectric layer 015, is also formed in top dielectric layer 015 and passes for connecting
Feel the top layer contact hole 014 of structure.014 bottom of top layer contact hole connects the metal 012 in metal interconnecting layer 01.Also, it is located at
Metallic reflector 013 is also formed in the adjacent metal interconnecting layer in 015 bottom of top dielectric layer, metallic reflector 013 corresponds to
The material of the beneath trenches being subsequently formed, metallic reflector 013 can be identical as the 012 ability material of metal of metal interconnecting layer 01,
So as to when preparing metal interconnecting layer 01 while prepare, it is prepared separately without additional process.
Step 02: referring to Fig. 6, etching multiple grooves in top layer dielectric layer 015, it is anti-that channel bottom exposes metal
Layer is penetrated, the resonant cavity of multiple probe units is used to form；
Specifically, can be, but not limited to form groove using lithography and etching technique, it is anti-that channel bottom exposes metal
Layer 013 is penetrated, metallic reflector 013 is used for the resonance intracavity reflecting incident light being subsequently formed.
In the present embodiment, between step 02 to 03 further include: form the second bottom dielectric layer 05 in channel bottom；Second bottom
The bottom of portion's dielectric layer 05 and metallic reflector 013 collectively as resonant cavity；Incorporated by reference to Fig. 3, such as only there is the second bottom dielectric
Layer, then set the refractive index of the second bottom dielectric layer 05 as n2, top dielectric layer 015 with a thickness of d, the height etc. of resonant cavity at this time
The thickness d 2 of the second bottom dielectric layer is subtracted in the thickness d of top dielectric layer, then thickness d 2=(λ/4- of the second bottom dielectric layer
d)/(n2-1).Such as there is the first bottom dielectric layer 04 and the second bottom dielectric layer 05 simultaneously, then the thickness of the second bottom dielectric layer
For d2=(λ/4-d-d1n1)/(n2-1).
Step 03: referring to Fig. 7, filling the first sacrificial layer X1 in multiple grooves；
Specifically, can be, but not limited to deposit the first sacrificial layer X1 in the trench using gas-phase deposition.It can adopt
It can be inorganic sacrificial materials or organic sacrificial that the first sacrificial layer X1, the first sacrificial layer X1 is deposited with physical gas-phase deposite method
Material, such as amorphous silicon etc..
In addition, in other embodiments of the invention, for the structure of Figure 12, this step 03 further include: fill in the trench
Full first sacrificial layer X1, and flush the first sacrificial layer X1 with the top of the groove, then, the redeposition one at the top of the first sacrificial layer X1
The top of the groove is higher by the top of layer new sacrifice layer X1', new sacrifice layer X1'；Also, the thickness d of new sacrifice layer X1' ' and resonant cavity
The sum of height D be equal to the incident light being incident in resonant cavity wavelength X 1/4；As only having the first bottom dielectric layer, top
Dielectric layer with a thickness of d, the first bottom dielectric layer with a thickness of d1, then the height D=d1+d of resonant cavity；As only having the second bottom
Portion's dielectric layer, top dielectric layer with a thickness of d, the second bottom dielectric layer with a thickness of d2, then the height D=d-d2 of resonant cavity；
As there is the first bottom dielectric layer and the second bottom dielectric layer simultaneously, top dielectric layer with a thickness of d, the first bottom dielectric layer
With a thickness of d1, the second bottom dielectric layer with a thickness of d2, then the height D=d-d2 of resonant cavity.
It can also include: in the first sacrificial layer for corresponding to 02 bottom of sensing arrangement incorporated by reference to Fig. 3, between step 03 to 04
The first bottom dielectric layer 04 is formed on X1；The top of first sacrificial layer X1 is flushed with the top of top dielectric layer 015, and first sacrifices
The thickness of layer X1 is equal to the thickness of top dielectric layer 015；Top of first bottom dielectric layer 04 as resonant cavity Q；As only having
First bottom dielectric layer 04, top of first bottom dielectric layer 04 as resonant cavity；If the refractive index of the first bottom dielectric layer is
N1, top dielectric layer with a thickness of d, the height of resonant cavity is equal to the thickness d of top dielectric layer at this time, the first bottom dielectric layer
With a thickness of d1, then thickness d 1=(λ/4-d)/n1 of the first bottom dielectric layer；As having the first bottom dielectric layer 04 and the simultaneously
Two bottom dielectric layers 05, if the refractive index of the first bottom dielectric layer 04 is n1, the first bottom dielectric layer 04 with a thickness of d1, if the
The refractive index of two bottom dielectric layers 05 is n2, and the height of top dielectric layer 015 is d, the second bottom dielectric layer 05 with a thickness of d2,
The thickness d that the height of resonant cavity Q is equal to top dielectric layer 015 at this time subtracts the thickness d 2 of the second bottom dielectric layer 05, then, first
Thickness d 1=(λ/4-d-d2 (n2-1))/n1 of bottom dielectric layer 04.
Step 04: referring to Fig. 8, on the first sacrificial layer X1 and forming multiple sensing arrangements 02 in top layer dielectric layer 015；
Each sensing arrangement 02 corresponds to above corresponding groove；
Specifically, the sensing arrangement 02 of the present embodiment is micro-bridge structure, it may include electricity in the micro-bridge structure of the present embodiment
Pole layer 022, sensitive material 023, upper release guard layer 025 and lower release guard layer 021.Also, on sensitive material 023
Side is additionally provided with filter layer 026, the incident light of non-targeted wavelength is fallen for selective filter, here, in filter layer 026 and sensitivity
One layer of intermediate release guard layer 024 is also set up between material layer 023.Intermediate release guard layer 024 is covered on lower release guard layer
021, on electrode layer 022 and sensitive material 023；Therefore, lower release guard layer 021, electrode layer 022, red can be sequentially prepared
Outer sensitive layer 023, intermediate release guard layer 024, filter layer 026 and upper release guard layer 025.
What needs to be explained here is that relief hole can be set in sensing arrangement 02, it can also be not provided with relief hole, if such as
With shown in the present embodiment, the electrode layer 022 of sensing arrangement 02 is contacted with top layer contact hole 014, then relief hole K1 is arranged；If
In other embodiments, the conductive layer of micro-bridge structure is by contact block and top layer contact holes contact, due to micro-bridge structure and sacrificial layer
Between have gap, then relief hole that no setting is required.
Step 05: being sacrificed referring to Fig. 9, forming second on multiple sensing arrangements 02 and the top layer dielectric layer 015 of exposure
Layer X2, patterns the second sacrificial layer X2, forms multiple second sacrificial layer X2 patterns, and each second sacrificial layer X2 pattern envelopes phase
The sensing arrangement 02 answered；
Specifically, the material of the second sacrificial layer X2 can be identical as the material of the first sacrificial layer X1, incorporated by reference to Fig. 3, pattern
The height of the second sacrificial layer X2 after change is equal to the vertical range between frequency spectrum filter structure 03 and sensing arrangement 02.
Step 06: referring to Fig. 10, in the second sacrificial layer X2 pattern table of the 1st class probe unit to the 4th class probe unit
Face and side wall correspond respectively forms the 1st class frequency spectrum filter structure to the 4th class frequency spectrum filter structure；Also, in the 1st class frequency spectrum
Filter structure is respectively formed relief hole into the 4th class frequency spectrum filter structure；
Specifically, the preparation for the frequency spectrum filter structure of the respective class of every a kind of probe unit specifically includes:
Step 061: forming the 1st class frequency spectrum filter layer over the entire substrate；
Step 062: the 1st class frequency spectrum filter layer except the 1st class probe unit of removal；
Step 063: using exposure mask, the 1st class probe unit is sheltered from, other class probe units are exposed；
Step 064: the 2nd class frequency spectrum filter structure to the 4th class frequency spectrum filter structure is prepared as procedure described above, until complete
At the 1st class frequency spectrum filter structure to the 4th class frequency spectrum filter structure；
What needs to be explained here is that frequency spectrum filter structure 03 covers on sensing arrangement 02 4 such as cover in the present embodiment
Week sensing arrangement 02 is caused to be sealed, therefore, relief hole K2 is set in frequency spectrum filter structure 03.But in the other implementations of the present invention
In example, frequency spectrum filter structure is only covered on sensing arrangement two sides, then relief hole that no setting is required.
Step 07: please referring to Figure 11, it is sacrificial to be removed through release process by relief hole K1, K2 by the first sacrificial layer X1 and second
Domestic animal layer X2 is formed between frequency spectrum filter layer 03 and sensing arrangement 02 to form resonant cavity Q below each sensing arrangement 02
Cavity.
Specifically, release process can be using conventional release process.For different sacrificial layer materials, example can be used
Such as wet corrosion technique release process.
Although the present invention is disclosed as above with preferred embodiment, right embodiment is illustrated only for the purposes of explanation, and
It is non-to limit the present invention, those skilled in the art can make without departing from the spirit and scope of the present invention it is several more
Dynamic and retouching, the protection scope that the present invention is advocated should be subject to claims.
Claims (19)
1. a kind of infrared sensor structure of multiband output, has multiple probe units, each probe unit has sensing knot
Structure, which is characterized in that be provided with frequency spectrum filter structure at the top of each sensing arrangement, the selectivity for incident light is saturating
It crosses, to realize each probe unit to the selective absorbing of incident light；At least part probe unit in multiple probe units
Frequency spectrum filter structure selected by property penetrate lambda1-wavelength it is not identical；
Wherein, each probe unit has resonant cavity, and sensing arrangement is set to above resonant cavity；It is also set up in sensing arrangement bottom
There is the first bottom dielectric layer；Top of first bottom dielectric layer as resonant cavity；The thickness d 1 of first bottom dielectric layer is by following
Formula indicates: d1=(λ/4-d)/n1, wherein n1 is the refractive index of the first bottom dielectric layer, and d is the thickness of top dielectric layer；
Or
Each probe unit has resonant cavity, and sensing arrangement is set to above resonant cavity；Resonant cavity bottom is provided with the second bottom
Portion's dielectric layer；Bottom of second bottom dielectric layer as resonant cavity；The thickness d 2 of second bottom dielectric layer is indicated by the following formula:
D2=(λ/4-d)/(n2-1), n2 are the refractive index of the second bottom dielectric layer, and d is the thickness of top dielectric layer；Or
Each probe unit has resonant cavity, and sensing arrangement is set to above resonant cavity；Is additionally provided in sensing arrangement bottom
One bottom dielectric layer, and resonant cavity bottom is provided with the second bottom dielectric layer；First bottom dielectric layer is as resonant cavity
Top, and bottom of second bottom dielectric layer as resonant cavity；Top of first bottom dielectric layer as resonant cavity；First bottom
The thickness d 1 of portion's dielectric layer is indicated by the following formula: d1=(λ/4-d-d2 (n2-1))/n1, the thickness d 2 of the second bottom dielectric layer
It is indicated by the following formula: d2=(λ/4-d-d1n1)/(n2-1), wherein n1 is the refractive index of the first bottom dielectric layer, n2 the
The refractive index of two bottom dielectric layers, d are the height of top dielectric layer.
2. infrared sensor structure according to claim 1, which is characterized in that at least part probe unit is constituted
One group of probe unit combines, and probe unit described in multiple groups combines arranged in arrays, each group of detection list in infrared sensor structure
In member combination, the size sequential for the lambda1-wavelength that probe unit is penetrated according to property selected by frequency spectrum filter structure.
3. infrared sensor structure according to claim 1, which is characterized in that the frequency spectrum filter structure is between certain
Gap is covered and is enclosed in above sensing arrangement.
4. infrared sensor structure according to claim 3, which is characterized in that the institute used corresponding to each probe unit
The material for stating frequency spectrum filter structure is not identical.
5. infrared sensor structure according to claim 4, which is characterized in that the material of the frequency spectrum filter structure is
The composite material that Si, Ge, GeSi or ZnSe or in which at least two kinds of combination are constituted；Alternatively, being with one of Si, Ge, Zn, Se
Host element, the binary formed by ion implanting or multi-element composite material.
6. infrared sensor structure according to claim 1, which is characterized in that in the sensing arrangement include electrode layer,
Sensitive material, also, filter layer is additionally provided with above sensitive material, fall entering for non-targeted wavelength for selective filter
Penetrate light.
7. infrared sensor structure according to claim 1, which is characterized in that further include metal interconnecting layer, be located at multiple
The bottom of probe unit is used for corresponding to metallic reflector is provided in the interconnection layer below resonant cavity to resonance intracavity reflecting
Incident light.
8. infrared sensor structure according to claim 7, which is characterized in that be higher by the sensing at the top of the resonant cavity
The minimum bottom of device structure, the sensor structure, which depends on that a part being higher by the top of the resonant cavity and formed, to be had upwards
Convex bottom, the bottom of that upward convex a part are the top of that a part that the resonant cavity is higher by.
9. a kind of infrared detection system characterized by comprising infrared sensor structure described in claim 1, color assignment
Device, pixel synthesizer；Wherein, the incident light frequency that color valuator absorbs probe units multiple in infrared sensor structure point
Not Fu Yu base color, pixel synthesizer is formed by different base color and probe unit according to probe unit and detected
To signal strength synthesize the color value of corresponding probe unit.
10. infrared detection system according to claim 9, which is characterized in that at least part probe unit is constituted
One group of probe unit combines, and probe unit described in multiple groups combines arranged in arrays, each group of detection list in infrared sensor structure
In member combination, according to the size sequential for the lambda1-wavelength that property selected by frequency spectrum filter structure penetrates；
Color valuator assigns the probe unit in each group of probe unit combination to different base colors, each group of spy respectively
Survey corresponding base color formation base color combination in unit combination, each base color combination and each group of detection list
Tuple, which is closed, to be corresponded.
11. infrared detection system according to claim 10, which is characterized in that different in the base color combination
Base color includes red, green, blue, light blue, includes four probe units in each group of probe unit combination, color valuator will
Red, green, blue, it is light blue assign this four probe units respectively, and this four probe units are according to 2 × 2 matrix arrangements.
12. infrared detection system according to claim 11, which is characterized in that the pixel synthesizer sets each detection
The synthesis region of unit is 2 × 2 matrixes comprising the probe unit, using four in this 2 × 2 matrix different base colors come
Synthesize the color value of the probe unit.
13. infrared detection system according to claim 12, which is characterized in that setting pixel synthesizer is to probe unit
Scanning direction, the synthesis region of each probe unit are with the probe unit along scanning direction and the direction vertical with scanning direction
2 × 2 matrixes of arrangement.
14. infrared detection system according to claim 13, which is characterized in that the described and scanning side in each synthesis region
It is identical to vertical direction.
15. a kind of preparation method of infrared sensor, infrared sensor has multiple probe units, each probe unit tool
Have a sensing arrangement, be provided with resonant cavity below sensing arrangement, frequency spectrum filter structure is provided at the top of sensing arrangement, be used for into
The selectivity for penetrating light penetrates, to realize each probe unit to the selective absorbing of incident light；In multiple probe units at least
The lambda1-wavelength that property selected by the frequency spectrum filter structure of a part of probe unit penetrates is not identical；It is characterized in that, according to every
The lambda1-wavelength that property selected by a frequency spectrum filter structure penetrates is sequentially prepared the probe unit from length is short to；If each frequency spectrum
The lambda1-wavelength that property selected by filter structure penetrates is divided into N kind, corresponds to N class frequency spectrum filter structure, further corresponds to N class
Probe unit；It specifically includes:
Step 01: providing a substrate, substrate surface is formed with metal interconnecting layer；Metal interconnecting layer has top layer dielectric layer；
Step 02: multiple grooves are etched in top layer dielectric layer, expose the metal interconnecting layer of bottom, it is more for being formed
The resonant cavity of a probe unit；
Step 03: the first sacrificial layer is filled in multiple grooves；
Step 04: on the first sacrificial layer and forming multiple sensing arrangements in top layer dielectric layer；Each sensing arrangement corresponds to phase
Above the groove answered；
Step 05: the second sacrificial layer is formed on multiple sensing arrangements and the top layer dielectric layer of exposure, patterns the second sacrificial layer,
It forms multiple second and sacrifices layer pattern, each second sacrifice layer pattern envelopes corresponding sensing arrangement；Second after patterning
The height of sacrificial layer is equal to the vertical range between frequency spectrum filter structure and sensing arrangement；
Step 06: a pair of in the second sacrificial layer patterned surfaces and the side wall difference one of the 1st class probe unit to N class probe unit
The 1st class frequency spectrum filter structure should be formed to N class frequency spectrum filter structure；Also, in the 1st class frequency spectrum filter structure to N class frequency
Relief hole is respectively formed in spectrum filter structure；N >=1 and be integer；
Step 07: the first sacrificial layer and the second sacrificial layer being removed through release process by relief hole, to tie in each sensing
Resonant cavity is formed below structure, forms cavity between frequency spectrum filter layer and sensing arrangement.
16. preparation method according to claim 15, which is characterized in that for every a kind of probe unit in the step 06
The preparation of frequency spectrum filter structure of respective class specifically include:
Step 061: forming K class frequency spectrum filter layer over the entire substrate；K is positive integer, and is 1~N-1；
Step 062: the K class frequency spectrum filter layer except removal K class probe unit；
Step 063: using exposure mask, K class probe unit is sheltered from；
Step 064:K progressively increases 1, repeats step 061~062, filters until completing the 1st class frequency spectrum filter structure to N class frequency spectrum
Structure.
17. preparation method according to claim 15, which is characterized in that between the step 02 to 03 further include: in ditch
Trench bottom forms the second bottom dielectric layer；Bottom of second bottom dielectric layer as resonant cavity；The thickness of second bottom dielectric layer
Wherein for d2=(λ/4-d)/(n2-1), d2 is the thickness of the second bottom dielectric layer, and n2 is the refractive index of the second bottom dielectric layer,
D is the thickness of top dielectric layer, and the thickness d that the height of resonant cavity is equal to top dielectric layer at this time subtracts the second bottom dielectric layer
Thickness d 2.
18. preparation method according to claim 15, which is characterized in that between the step 03 to 04 further include: right
The first bottom dielectric layer should be formed on the first sacrificial layer of sensing arrangement bottom；Top of first bottom dielectric layer as resonant cavity
Portion；First bottom dielectric layer with a thickness of d1=(λ/4-d)/n1, wherein n1 be the first bottom dielectric layer refractive index, d be top
The thickness of portion's dielectric layer, the height of resonant cavity is equal to the thickness d of top dielectric layer at this time.
19. preparation method according to claim 15, which is characterized in that step 03 specifically includes: filling is full in the trench
First sacrificial layer, and flush the first sacrificial layer with the top of the groove, then, redeposited one layer of new sacrifice layer at the top of sacrificial layer,
The top of the groove is higher by the top of new sacrifice layer；Also, the sum of height of the thickness of new sacrifice layer and resonant cavity be equal to be incident on it is humorous
Shake intracavitary incident light wavelength X 1/4.
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| CN2121022U (en) * | 1992-01-07 | 1992-11-04 | 北京市计量科学研究所 | Color temp. meter |
| JP2674545B2 (en) * | 1995-01-20 | 1997-11-12 | 日本電気株式会社 | Infrared detector and driving method thereof |
| US6392232B1 (en) * | 1995-07-21 | 2002-05-21 | Pharmarcopeia, Inc. | High fill factor bolometer array |
| JP3597069B2 (en) * | 1999-01-12 | 2004-12-02 | 日本電気株式会社 | Thermal infrared array sensor for detecting multiple infrared wavelength bands |
| CN104568756A (en) * | 2015-01-21 | 2015-04-29 | 中国科学院上海技术物理研究所 | Medium-wave infrared spectrum identifiable detector |
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