CN107364104A - A kind of method that thermoplastic shaping prepares LED thin-film materials - Google Patents
A kind of method that thermoplastic shaping prepares LED thin-film materials Download PDFInfo
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- CN107364104A CN107364104A CN201710572529.4A CN201710572529A CN107364104A CN 107364104 A CN107364104 A CN 107364104A CN 201710572529 A CN201710572529 A CN 201710572529A CN 107364104 A CN107364104 A CN 107364104A
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- screw rod
- races
- precursor
- cadmium
- solid precursors
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- 239000000463 material Substances 0.000 title claims abstract description 54
- 229920001169 thermoplastic Polymers 0.000 title claims abstract description 50
- 239000010409 thin film Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000004416 thermosoftening plastic Substances 0.000 title claims abstract description 23
- 238000007493 shaping process Methods 0.000 title claims abstract description 19
- 239000002243 precursor Substances 0.000 claims abstract description 135
- 239000007787 solid Substances 0.000 claims abstract description 72
- 230000012010 growth Effects 0.000 claims abstract description 29
- 239000002096 quantum dot Substances 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000011065 in-situ storage Methods 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 238000013461 design Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 40
- 230000004888 barrier function Effects 0.000 claims description 37
- -1 alkyl amino tellurides Chemical class 0.000 claims description 36
- 239000004743 Polypropylene Substances 0.000 claims description 27
- 238000001125 extrusion Methods 0.000 claims description 26
- 229920001155 polypropylene Polymers 0.000 claims description 26
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 239000011701 zinc Substances 0.000 claims description 9
- 125000006323 alkenyl amino group Chemical group 0.000 claims description 8
- 125000003282 alkyl amino group Chemical group 0.000 claims description 8
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 8
- KPWJBEFBFLRCLH-UHFFFAOYSA-L cadmium bromide Chemical compound Br[Cd]Br KPWJBEFBFLRCLH-UHFFFAOYSA-L 0.000 claims description 6
- OKIIEJOIXGHUKX-UHFFFAOYSA-L cadmium iodide Chemical compound [Cd+2].[I-].[I-] OKIIEJOIXGHUKX-UHFFFAOYSA-L 0.000 claims description 6
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 claims description 6
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 238000004073 vulcanization Methods 0.000 claims description 4
- VNDYJBBGRKZCSX-UHFFFAOYSA-L zinc bromide Chemical compound Br[Zn]Br VNDYJBBGRKZCSX-UHFFFAOYSA-L 0.000 claims description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 4
- IGPFOKFDBICQMC-UHFFFAOYSA-N 3-phenylmethoxyaniline Chemical compound NC1=CC=CC(OCC=2C=CC=CC=2)=C1 IGPFOKFDBICQMC-UHFFFAOYSA-N 0.000 claims description 3
- 239000004425 Makrolon Substances 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims description 3
- 229910000011 cadmium carbonate Inorganic materials 0.000 claims description 3
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 claims description 3
- 229940075417 cadmium iodide Drugs 0.000 claims description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 3
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 claims description 3
- 229910000331 cadmium sulfate Inorganic materials 0.000 claims description 3
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 claims description 3
- GKDXQAKPHKQZSC-UHFFFAOYSA-L cadmium(2+);carbonate Chemical compound [Cd+2].[O-]C([O-])=O GKDXQAKPHKQZSC-UHFFFAOYSA-L 0.000 claims description 3
- PSIBWKDABMPMJN-UHFFFAOYSA-L cadmium(2+);diperchlorate Chemical compound [Cd+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O PSIBWKDABMPMJN-UHFFFAOYSA-L 0.000 claims description 3
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 3
- DLINORNFHVEIFE-UHFFFAOYSA-N hydrogen peroxide;zinc Chemical compound [Zn].OO DLINORNFHVEIFE-UHFFFAOYSA-N 0.000 claims description 3
- LGRLWUINFJPLSH-UHFFFAOYSA-N methanide Chemical compound [CH3-] LGRLWUINFJPLSH-UHFFFAOYSA-N 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 229920005646 polycarboxylate Polymers 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 3
- 239000004800 polyvinyl chloride Substances 0.000 claims description 3
- 239000007790 solid phase Substances 0.000 claims description 3
- 229940105296 zinc peroxide Drugs 0.000 claims description 3
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims description 3
- 229910000368 zinc sulfate Inorganic materials 0.000 claims description 3
- 229960001763 zinc sulfate Drugs 0.000 claims description 3
- RXBXBWBHKPGHIB-UHFFFAOYSA-L zinc;diperchlorate Chemical compound [Zn+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O RXBXBWBHKPGHIB-UHFFFAOYSA-L 0.000 claims description 3
- XIEPJMXMMWZAAV-UHFFFAOYSA-N cadmium nitrate Inorganic materials [Cd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XIEPJMXMMWZAAV-UHFFFAOYSA-N 0.000 claims description 2
- UJYLYGDHTIVYRI-UHFFFAOYSA-N cadmium(2+);ethane Chemical compound [Cd+2].[CH2-]C.[CH2-]C UJYLYGDHTIVYRI-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- NMHMNPHRMNGLLB-UHFFFAOYSA-N phloretic acid Chemical compound OC(=O)CCC1=CC=C(O)C=C1 NMHMNPHRMNGLLB-UHFFFAOYSA-N 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 229940102001 zinc bromide Drugs 0.000 claims description 2
- 239000011592 zinc chloride Substances 0.000 claims description 2
- 235000005074 zinc chloride Nutrition 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
- ONIOAEVPMYCHKX-UHFFFAOYSA-N carbonic acid;zinc Chemical compound [Zn].OC(O)=O ONIOAEVPMYCHKX-UHFFFAOYSA-N 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 239000011669 selenium Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 27
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000007796 conventional method Methods 0.000 abstract description 3
- 230000006835 compression Effects 0.000 description 18
- 238000007906 compression Methods 0.000 description 18
- 238000010008 shearing Methods 0.000 description 16
- 239000010410 layer Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000011056 performance test Methods 0.000 description 6
- 229910017083 AlN Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 2
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011667 zinc carbonate Substances 0.000 description 2
- 229910000010 zinc carbonate Inorganic materials 0.000 description 2
- 235000004416 zinc carbonate Nutrition 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- SOCPHAQYFATGGB-UHFFFAOYSA-N CC[Cd] Chemical compound CC[Cd] SOCPHAQYFATGGB-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000011469 building brick Substances 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000021332 multicellular organism growth Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
- B29C48/25—Component parts, details or accessories; Auxiliary operations
- B29C48/36—Means for plasticising or homogenising the moulding material or forcing it through the nozzle or die
- B29C48/50—Details of extruders
- B29C48/505—Screws
- B29C48/565—Screws having projections other than the thread, e.g. pins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
- B29C48/25—Component parts, details or accessories; Auxiliary operations
- B29C48/36—Means for plasticising or homogenising the moulding material or forcing it through the nozzle or die
- B29C48/375—Plasticisers, homogenisers or feeders comprising two or more stages
- B29C48/385—Plasticisers, homogenisers or feeders comprising two or more stages using two or more serially arranged screws in separate barrels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
- B29C48/25—Component parts, details or accessories; Auxiliary operations
- B29C48/36—Means for plasticising or homogenising the moulding material or forcing it through the nozzle or die
- B29C48/50—Details of extruders
- B29C48/505—Screws
- B29C48/56—Screws having grooves or cavities other than the thread or the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2007/00—Flat articles, e.g. films or sheets
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention belongs to LED technology of thin film material preparation field, there is provided a kind of method that thermoplastic shaping prepares LED thin-film materials.This method is scattered by the way that the solid precursors of the solid precursors of VI races precursor and II races precursor are sheared with thermoplastic polymer in the screw rod 1, screw rod 2 of particular design respectively, it is then fed into the screw rod 3 of particular design, add monocrystalline quantum point condition semiconductor simultaneously, with the solid precursors of II races precursor reaction in-situ occurs in thermoplastic polymer systems for the solid precursors of VI races precursor, using monocrystalline quantum dot as crystal growth core, without substrate growth, large area LED thin-film materials are formed.Compared with conventional method, the invention can effectively control the thickness and area of film, realize that scale low cost prepares large area LED thin-film materials.
Description
Technical field
The present invention relates to LED technology of thin film material preparation field, and LED film materials are prepared more particularly, to a kind of thermoplastic shaping
The method of material.
Background technology
LED is the electronic building brick that can light when being powered, and is luminescence component made of semi-conducting material, materials'use III-
V races chemical element, such as gallium phosphide (GaP), GaAs (GaAs), principle of luminosity is to convert electrical energy into light, that is, to chemical combination
Thing semiconductor applies electric current, and through the combination of electrons and holes, superfluous energy can disengage in the form of light, reach luminous effect
Fruit, belong to cold property and light, long lifespan was up to more than 100,000 hours.The characteristics of LED maximums, is：Need not warm lamp time, reaction speed
Quickly (about 10-9S), small volume, power-saving, pollution is low, is adapted to volume production, there is high-reliability, the need in easy fit applications
Minimum or array type component is made, the scope of application is quite wide, extremely wide in display, automobile, the application of illuminating lamp field.Current shape
Into large-scale productions such as upstream epitaxial material, middle reaches chip manufacturing, downstream components encapsulation.
At present, the LED monocrystal materials and thin-film material of high quality are prepared, be develop luminescent device, electronic device with
And ensure the precondition of device performance and reliability.Because the fusing point of semi-conducting material is high, it is difficult to adopt the liquid of melting
Body prepares monocrystal material, although employing high temperature, high pressure technique, also can only obtain the flat crystal of needle-like or small size.It is existing
There is main preparation method using vapour deposition, the growth of epitaxial layer, but be difficult to control its film thickness, area is small.Therefore, the neck
Field technique personnel try to explore can scale low cost volume production prepare LED materials.Lu etc. has invented a kind of for such as LED light source
High-light-transmittance diffusion type thin film of diffusion and preparation method thereof is played Deng cold light source.The film includes individual layer PC, individual layer PMMA
With double-deck PMMA/PC materials, perfect adaptation precision die process technology, thermoplastic polyester material roll technology and PC, PMMA
The high transmission rate characteristic of material, prepared using the technique of corotating twin-screw die head co-extrusion, be easy to large-scale production and
Popularization and application.Liu etc. provides a kind of method that aluminium nitride film is prepared using Graphene glass low-cost large-area.First honest and clean
Graphene is grown on the pyrocerams such as valency quartz glass, sapphire, is then grown directly upon aluminium nitride film one-step method
On graphene buffer layers, low temperature nitride aluminium growth course is needed not move through, directly considerably reduces AlN film production costs.
To AlN can be further processed into LED component, due to the extraordinary thermal conductivity of graphene, manufactured LED chip can avoid
Problems of excessive heat during use.Cai etc. mixes silicone elastomer matrix liquid and epoxy curing agent, suppress and solidify can
The elastic transparent film of stretching；By the metal nanometer line for wrapping up alloy by ultrasound, centrifugation, it is dispersed in hexane solution, removes
Elastic transparent film surface is distributed evenly in after miscellaneous, and is immersed in lactic acid solution, is then made annealing treatment, that is, is made and leads
Electric elastic transparent film；It is connected into LED light source by wire, the transparent membrane LED dimmer of metal nanometer line is made.Zhu
Etc. a kind of preparation method of ito thin film is provided, by providing a substrate, the substrate is positioned over magnetron sputtering apparatus cavity
It is interior, and argon gas is passed through, then make argon gas build-up of luminance using radio-frequency power supply and produce argon plasma；Apply dc source again, serving as a contrast
Basal surface forms an ITO protective layers；Turn off the radio-frequency power supply, the auxiliary of preset flow is passed through in magnetron sputtering apparatus cavity
Gas, the ito thin film layer that at least one layer of refractive index is less than protective layer refractive index, ITO protective layers and thereon are formed on the protection layer
All ito thin film layers are collectively forming the ito thin film of gradually changed refractive index.The ito thin film is applied in LED chip, and light is in each Jie
The exit angle of plasma membrane layer is larger, and SQW is sent, light is as much as possible to escape into ito film layer, and and can causes ito film
Light in layer is escaped into outside packaging plastic as far as possible, so as to improve the outer quantum luminous efficiency of light emitting diode, lifts device
Brightness.
Obviously it is existing to prepare film LED complex process, and it is difficult to large area deposition.Cost height be present, invest the defects of big.
The content of the invention
It is an object of the invention to provide a kind of method that thermoplastic shaping prepares LED thin-film materials, can solve conventional method can only
The defects of obtaining the flat crystal of needle-like or small size, most important, creative carry out screw design, make solid precursors with
Thermoplastic polymer uniformly mixes, and is cut into nanomorphic, and reaction in-situ occurs upon mixing, using monocrystalline quantum dot as crystal
Growth cores, no substrate growth can scale low cost preparation large area LED thin-film materials.
Concrete technical scheme of the present invention is as follows：
A kind of method that thermoplastic shaping prepares LED thin-film materials, by by the solid precursors of VI races precursor and II races precursor
Solid precursors are sheared with thermoplastic polymer in the screw rod 1, screw rod 2 of particular design respectively disperses, and is then fed into special set
In the screw rod 3 of meter, while monocrystalline quantum point condition semiconductor is added, the solid precursors of VI races precursor and the solid of II races precursor
Reaction in-situ occurs in thermoplastic polymer systems for predecessor, using monocrystalline quantum dot as crystal growth core, no substrate growth, and shape
Into large area LED thin-film materials, comprise the following steps that：
（1）Screw rod 1 is designed, by the solid precursors of VI races precursor and thermoplastic polymer by certain mass ratio in screw rod 1
Sheared in extrusion equipment scattered；Screw rod 2 is designed, the solid precursors of II races precursor and thermoplastic polymer are pressed into certain quality
It is more scattered than being sheared in the extrusion equipment of screw rod 2；Clipped mixed solid precursors should realize that nanomorphic disperses；
（2）Screw rod 3 is designed, by step（1）Two kinds of mixtures of gained are proportionally added into the extrusion equipment of screw rod 3, simultaneously
Monocrystalline quantum point condition semiconductor is added, the solid precursors of VI races precursor are with the solid precursors of II races precursor in thermoplastic poly
Reaction in-situ occurs in compound system, using monocrystalline quantum dot as crystal growth core, no substrate growth, you can form large area LED
Thin-film material；
The screw rod 1 and screw rod 2 are barrier screw, and its designing points is：It is equidistant on the face of cylinder of screw rod to open up two
Group cannelure, two groups of grooves are alternate, and the faceted pebble for separation is different from the gap length of two barrels, and one is normal screw rod and material
The gap of cylinder, one is more than this value, and the outlet of feed well is closed in axis direction, and the entrance of blow tank is closed in axis direction；
The barrier segment length of the screw rod 1 and screw rod 2 is 1 ~ 2 times of screw diameter；The barrier of the new screw 1 and new screw 2
Section set location be：When making material arrival barrier screen, the mass fraction of thermoplastic polymer residual solid phase is 20% ~ 30%；
The screw rod 3 is pin bypass type screw rod, and its designing points is：Many juts, the side of being shaped as are set on screw rod
Shape or cylinder, by the way of annular array, the stream in screw channel is split, changes the flow condition of material, strengthen being kneaded
And homogenizing；In the screw rod 3, the homogenizing zone for being arranged to screw rod of pin；In the screw rod 3, screw diameter is increased to by 50mm
200mm, corresponding pin diameter increase to 6mm by 3mm；In the screw rod 3, the spacing between pin is no more than pin diameter
1.5 again；In the screw rod 3, screw diameter increases to 200mm by 50mm, and corresponding pin quantity increases to 50 by 30.
Preferably, step（1）The solid precursors of VI races precursor are elemental sulfur, vulcanization trialkenyl phosphine, alkyl amino
Sulfide, alkenyl amino sulfide, selenizing trialkyl phosphine, selenizing trialkenyl phosphine, alkyl amino selenides, alkenyl amino selenizing
One or several kinds in thing, telluride trialkyl phosphine, telluride trialkenyl phosphine or alkyl amino tellurides.
Preferably, step（1）The solid precursors of II races precursor are zinc methide, diethyl zinc, zinc polycarboxylate, bromine
Change zinc, zinc chloride, zinc fluoride, zinc carbonate, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, dimethyl cadmium, two
Ethyl-cadmium, cadmium oxide, cadmium carbonate, cadmium acetate, cadmium fluoride, caddy, cadmium iodide, cadmium bromide, cadmium perchlorate, cadmium phosphide, nitric acid
One or several kinds in cadmium, cadmium sulfate or carboxylic acid cadmium.
Preferably, step（1）The thermoplastic polymer is polyethylene, polypropylene, polystyrene, poly-methyl methacrylate
The thermoplastic polymers such as ester, polyvinyl chloride, makrolon, polyurethane；The parameters such as screw speed, heating-up temperature should be according to used
The physicochemical property of thermoplastic polymer is configured.
Preferably, step（2）Before the feed molar ratio should meet the solid precursors of VI races precursor and the solid of II races precursor
Drive the mol ratio that thing reacts.
Preferably, step（2）The monocrystalline quantum point condition semiconductor is spherical GaN quantum dots, AlN quantum dots, InN quantum
One kind in point.
In the method for the invention, screw design is particularly important.The solid precursors of VI races precursor are consolidated with II races precursor
Body predecessor, the shearing in thermoplastic polymer disperse, it is necessary to using Strong shear screw rod, there is powerful stripping dispersivity,
It predecessor is separated into nanomorphic in advance, therefore screw rod 1 and screw rod 2 are designed as barrier screw, melt and not melt but energy
Strong shear action is produced when passing through gap by the solid phase fragment in gap, not only improves the balanced melting of polymer, again
The stripping of solid precursors can be promoted to disperse.Shear gap, barrier segment length and setting are important control points.Shear gap is too
Greatly, shearing dispersion effect can be reduced；Shear gap is too small, can significantly affect production efficiency.Barrier segment length is too big, can increase edge
Journey resistance, increase energy consumption；Barrier length is too small, and shearing dispersion effect is bad.And the position of barrier screen is rationally set, modeling can be improved
Change effect, peel off dispersion effect and output stability.After two kinds of mixtures mix, the solid precursors and II of VI races precursor
Reaction in-situ occurs in thermoplastic polymer systems for the solid precursors of race's precursor, to ensure the full and uniform of solid precursors
Contact, the now effect of screw rod is worked as based on mixing homogenizing, therefore screw rod 3 is designed as pin bypass type screw rod, and pin is set
Put in homogenizing zone.Pin can both smash Solid Bed, increase heat transfer area, strengthen fricting shearing, again can be by material repeated segmentation point
Stream, enhancing are kneaded homogenization, and obtain low temperature extrusion.In pin bypass type screw rod, diameter, quantity and the spacing of pin,
Shape and spread pattern of pin etc., all had an impact to being kneaded homo-effect.
The method that a kind of thermoplastic shaping of the present invention prepares LED thin-film materials.It is essentially consisted in by consolidating VI races precursor
The solid precursors of body predecessor and II races precursor are cut with thermoplastic polymer in the screw rod 1, screw rod 2 of particular design respectively
Cutting dissipates, and is then fed into the screw rod 3 of particular design, while adds monocrystalline quantum point condition semiconductor, before the solid of VI races precursor
Reaction in-situ occurs in thermoplastic polymer systems for the solid precursors for driving thing and II races precursor, using monocrystalline quantum dot as crystalline substance
Body growth cores, no substrate growth, form large area LED thin-film materials.By this method, conventional method can be overcome to can only obtain pin
The defects of shape or the flat crystal of small size, realize that scale low cost prepares large area LED thin-film materials.
The invention provides a kind of method that thermoplastic shaping prepares LED thin-film materials, compared with prior art, what it was protruded
Feature and excellent effect are：
1. the present invention can produce Strong shear effect, realize solid precursors in thermoplastic polymer by the design of new screw
In stripping disperse, ensure that it is separated into nanomorphic in advance, so as to realizing after the reaction using monocrystalline quantum dot as crystal growth core
Without substrate growth.
2. the new screw that the present invention designs, adaptability is stronger, available for polyethylene, polypropylene, polystyrene, poly- first
The mixing homogenizing of a variety of thermoplastic polymers such as base methyl acrylate, polyvinyl chloride, makrolon, polyurethane, realizes thermoplastification
Prepare LED thin-film materials.
3. the method that the present invention uses, it can effectively control the thickness and area of LED films.
4. the method that the present invention uses, cost is low, easy to operate, and the scale volume production of large area LED films can be achieved.
Embodiment
Below by way of embodiment, the present invention is described in further detail, but this should not be interpreted as to the present invention
Scope be only limitted to following example.In the case where not departing from above method thought of the present invention, according to ordinary skill
The various replacements or change that knowledge and customary means are made, should be included in the scope of the present invention.
Embodiment 1
A kind of thermoplastic shaping prepares the preparation method of LED thin-film materials, and it is as follows that it prepares the detailed process of LED films：
Solid forerunner using elemental sulfur, vulcanization trialkenyl phosphine, alkyl amino sulfide and alkenyl amino sulfide as VI races precursor
Thing, the solid precursors using zinc methide, diethyl zinc, zinc polycarboxylate and zinc bromide as II races precursor, using polypropylene as thermoplasticity
Polymer.
Barrier screw 1 and barrier screw 2 are designed as：Screw diameter 100mm, barrier segment length are 150mm, barrier screen
It is arranged in the middle part of compression section.
Pin bypass type screw rod 3 is designed as：Pin is square, using annular array, is arranged on screw rod homogenizing zone.Screw rod is straight
Footpath 120mm, pin diameter 4mm, pin quantity 40, the spacing between pin are 5mm.
The solid precursors of 20molVI races precursor are mixed with 10kg polypropylene, by the extrusion equipment shearing point of screw rod 1
Dissipate.The solid precursors of 20molII races precursor are mixed with 10kg polypropylene, sheared by the extrusion equipment of screw rod 2 scattered.Screw rod
1 and the rotating speed of screw rod 2 be arranged to 100r/min, temperature setting is 170 DEG C of feeding section, 190 DEG C of compression section, 180 DEG C of homogenizing zone.Will
The mixture of screw rod 1 and the scattered gained of the shearing of screw rod 2 is added in the extrusion equipment of screw rod 3, while adds spherical GaN quantum dots,
The rotating speed of screw rod 3 is arranged to 90r/min, and temperature setting is 160 DEG C of feeding section, 195 DEG C of compression section, 170 DEG C of homogenizing zone.Before VI races
With the solid precursors of II races precursor reaction in-situ occurs in polypropylene for the solid precursors of body, using monocrystalline quantum dot as crystal
Growth cores, no substrate growth, you can form large area LED thin-film materials.
The LED films obtained to embodiment 1 carry out performance test, obtain its thickness, surface roughness, visible light transmissivity
And resistance, as shown in table 1.
Embodiment 2
A kind of method that thermoplastic shaping prepares LED thin-film materials, it is as follows that it prepares the detailed process of LED films：
Using selenizing trialkyl phosphine, selenizing trialkenyl phosphine, alkyl amino selenides and alkenyl amino selenides consolidating as VI races precursor
Body predecessor, the solid precursors using dimethyl cadmium, diethyl cadmium, cadmium oxide, cadmium carbonate and cadmium acetate as II races precursor, with poly-
Propylene is thermoplastic polymer.
Barrier screw 1 and barrier screw 2 are designed as：Screw diameter 100mm, barrier segment length are 100mm, barrier screen
It is arranged in the middle part of compression section.
Pin bypass type screw rod 3 is designed as：Pin is cylinder, using annular array, is arranged on screw rod homogenizing zone.Screw rod
Diameter 180mm, pin diameter 5.5mm, pin quantity 50, the spacing between pin are 8mm.
The solid precursors of 25molVI races precursor are mixed with 10kg polypropylene, by the extrusion equipment shearing point of screw rod 1
Dissipate.The solid precursors of 25molII races precursor are mixed with 10kg polypropylene, sheared by the extrusion equipment of screw rod 2 scattered.Screw rod
1 and the rotating speed of screw rod 2 be arranged to 110r/min, temperature setting is 165 DEG C of feeding section, 195 DEG C of compression section, 170 DEG C of homogenizing zone.Will
The mixture of screw rod 1 and the scattered gained of the shearing of screw rod 2 is added in the extrusion equipment of screw rod 3, while adds monocrystalline quantum point condition half
Conductor, the rotating speed of screw rod 3 are arranged to 100r/min, and temperature setting is 170 DEG C of feeding section, 190 DEG C of compression section, 175 DEG C of homogenizing zone.
With the solid precursors of II races precursor reaction in-situ occurs in polypropylene for the solid precursors of VI races precursor, with monocrystalline quantum dot
For crystal growth core, no substrate growth, you can form large area LED thin-film materials.
The LED films obtained to embodiment 2 carry out performance test, obtain its thickness, surface roughness, visible light transmissivity
And resistance, as shown in table 1.
Embodiment 3
A kind of method that thermoplastic shaping prepares LED thin-film materials, it is as follows that it prepares the detailed process of LED films：
Solid precursors using telluride trialkyl phosphine, telluride trialkenyl phosphine and alkyl amino tellurides as VI races precursor, with chlorination
Zinc, zinc fluoride, zinc carbonate and zinc nitrate are the solid precursors of II races precursor, using polypropylene as thermoplastic polymer.
Barrier screw 1 and barrier screw 2 are designed as：Screw diameter 100mm, barrier segment length are 180mm, barrier screen
It is arranged in the middle part of compression section.
Pin bypass type screw rod 3 is designed as：Pin is square, using annular array, is arranged on screw rod homogenizing zone.Screw rod is straight
Footpath 150mm, pin diameter 5mm, pin quantity 45, the spacing between pin are 7mm.
The solid precursors of 18molVI races precursor are mixed with 10kg polypropylene, by the extrusion equipment shearing point of screw rod 1
Dissipate.The solid precursors of 18molII races precursor are mixed with 10kg polypropylene, sheared by the extrusion equipment of screw rod 2 scattered.Screw rod
1 and the rotating speed of screw rod 2 be arranged to 90r/min, temperature setting is 165 DEG C of feeding section, 200 DEG C of compression section, 175 DEG C of homogenizing zone.Will
The mixture of screw rod 1 and the scattered gained of the shearing of screw rod 2 is added in the extrusion equipment of screw rod 3, while adds monocrystalline quantum point condition half
Conductor AlN, the rotating speed of screw rod 3 are arranged to 100r/min, and temperature setting is 160 DEG C of feeding section, 195 DEG C of compression section, homogenizing zone 170
℃.With the solid precursors of II races precursor reaction in-situ occurs in polypropylene for the solid precursors of VI races precursor, with monocrystalline amount
Son point is crystal growth core, no substrate growth, you can form large area LED thin-film materials.
The LED films obtained to embodiment 3 carry out performance test, obtain its thickness, surface roughness, visible light transmissivity
And resistance, as shown in table 1.
Embodiment 4
A kind of method that thermoplastic shaping prepares LED thin-film materials, it is as follows that it prepares the detailed process of LED films：
Solid forerunner using elemental sulfur, vulcanization trialkenyl phosphine, alkyl amino sulfide and alkenyl amino sulfide as VI races precursor
Thing, the solid precursors using cadmium fluoride, caddy, cadmium iodide, cadmium bromide and cadmium perchlorate as II races precursor, using polypropylene as heat
Thermoplastic polymer.
Barrier screw 1 and barrier screw 2 are designed as：Screw diameter 100mm, barrier segment length are 130mm, barrier screen
It is arranged in the middle part of compression section.
Pin bypass type screw rod 3 is designed as：Pin is cylinder, using annular array, is arranged on screw rod homogenizing zone.Screw rod
Diameter 120mm, pin diameter 4.5mm, pin quantity 45, the spacing between pin are 6mm.
The solid precursors of 22molVI races precursor are mixed with 10kg polypropylene, by the extrusion equipment shearing point of screw rod 1
Dissipate.The solid precursors of 22molII races precursor are mixed with 10kg polypropylene, sheared by the extrusion equipment of screw rod 2 scattered.Screw rod
1 and the rotating speed of screw rod 2 be arranged to 100r/min, temperature setting is 170 DEG C of feeding section, 190 DEG C of compression section, 175 DEG C of homogenizing zone.Will
The mixture of screw rod 1 and the scattered gained of the shearing of screw rod 2 is added in the extrusion equipment of screw rod 3, while adds monocrystalline quantum point condition half
Conductor, the rotating speed of screw rod 3 are arranged to 100r/min, and temperature setting is 160 DEG C of feeding section, 200 DEG C of compression section, 170 DEG C of homogenizing zone.
With the solid precursors of II races precursor reaction in-situ occurs in polypropylene for the solid precursors of VI races precursor, with monocrystalline quantum dot
For crystal growth core, no substrate growth, you can form large area LED thin-film materials.
The LED films obtained to embodiment 4 carry out performance test, obtain its thickness, surface roughness, visible light transmissivity
And resistance, as shown in table 1.
Embodiment 5
A kind of method that thermoplastic shaping prepares LED thin-film materials, it is as follows that it prepares the detailed process of LED films：
Using selenizing trialkyl phosphine, selenizing trialkenyl phosphine, alkyl amino selenides and alkenyl amino selenides consolidating as VI races precursor
Body predecessor, the solid precursors using cadmium phosphide, cadmium nitrate, cadmium sulfate and carboxylic acid cadmium as II races precursor, using polypropylene as thermoplastic
Property polymer.
Barrier screw 1 and barrier screw 2 are designed as：Screw diameter 100mm, barrier segment length are 200mm, barrier screen
It is arranged in the middle part of compression section.
Pin bypass type screw rod 3 is designed as：Pin is square, using annular array, is arranged on screw rod homogenizing zone.Screw rod is straight
Footpath 80mm, pin diameter 3.5mm, pin quantity 35, the spacing between pin are 4mm.
The solid precursors of 20molVI races precursor are mixed with 10kg polypropylene, by the extrusion equipment shearing point of screw rod 1
Dissipate.The solid precursors of 20molII races precursor are mixed with 10kg polypropylene, sheared by the extrusion equipment of screw rod 2 scattered.Screw rod
1 and the rotating speed of screw rod 2 be arranged to 100r/min, temperature setting is 165 DEG C of feeding section, 195 DEG C of compression section, 170 DEG C of homogenizing zone.Will
The mixture of screw rod 1 and the scattered gained of the shearing of screw rod 2 is added in the extrusion equipment of screw rod 3, while adds monocrystalline quantum point condition half
The spherical InN quantum dots of conductor, the rotating speed of screw rod 3 are arranged to 110r/min, and temperature setting is 170 DEG C of feeding section, compression section 195
DEG C, 180 DEG C of homogenizing zone.The solid precursors of VI races precursor occur in situ anti-with the solid precursors of II races precursor in polypropylene
Should, using monocrystalline quantum dot as crystal growth core, no substrate growth, you can form large area LED thin-film materials.
The LED films obtained to embodiment 5 carry out performance test, obtain its thickness, surface roughness, visible light transmissivity
And resistance, as shown in table 1.
Embodiment 6
A kind of method that thermoplastic shaping prepares LED thin-film materials, it is as follows that it prepares the detailed process of LED films：
Solid precursors using telluride trialkyl phosphine, telluride trialkenyl phosphine and alkyl amino tellurides as VI races precursor, with oxidation
Zinc, zinc peroxide, zinc perchlorate and zinc sulfate are the solid precursors of II races precursor, using polypropylene as thermoplastic polymer.
Barrier screw 1 and barrier screw 2 are designed as：Screw diameter 100mm, barrier segment length are 150mm, barrier screen
It is arranged in the middle part of compression section.
Pin bypass type screw rod 3 is designed as：Pin is cylinder, using annular array, is arranged on screw rod homogenizing zone.Screw rod
Diameter 100mm, pin diameter 4mm, pin quantity 40, the spacing between pin are 6mm.
The solid precursors of 15molVI races precursor are mixed with 10kg polypropylene, by the extrusion equipment shearing point of screw rod 1
Dissipate.The solid precursors of 15molII races precursor are mixed with 10kg polypropylene, sheared by the extrusion equipment of screw rod 2 scattered.Screw rod
1 and the rotating speed of screw rod 2 be arranged to 110r/min, temperature setting is 160 DEG C of feeding section, 200 DEG C of compression section, 170 DEG C of homogenizing zone.Will
The mixture of screw rod 1 and the scattered gained of the shearing of screw rod 2 is added in the extrusion equipment of screw rod 3, while adds monocrystalline quantum point condition half
The spherical GaN quantum dots of conductor, the rotating speed of screw rod 3 are arranged to 110r/min, and temperature setting is 165 DEG C of feeding section, compression section 200
DEG C, 170 DEG C of homogenizing zone.The solid precursors of VI races precursor occur in situ anti-with the solid precursors of II races precursor in polypropylene
Should, using monocrystalline quantum dot as crystal growth core, no substrate growth, you can form large area LED thin-film materials.
The LED films obtained to embodiment 6 carry out performance test, obtain its thickness, surface roughness, visible light transmissivity
And resistance, as shown in table 1.
Table 1：
| Specific embodiment | Average thickness（nm） | Surface roughness（nm） | Visible light transmissivity（%） | Resistance（×108Ω） |
| Embodiment 1 | 35.8 | 1.92 | 80.4 | 1.9 |
| Embodiment 2 | 33.1 | 2.34 | 84.6 | 2.0 |
| Embodiment 3 | 36.7 | 2.25 | 87.5 | 2.1 |
| Embodiment 4 | 35.2 | 2.43 | 84.8 | 1.8 |
| Embodiment 5 | 39.6 | 1.98 | 83.2 | 1.9 |
| Embodiment 6 | 37.3 | 2.16 | 80.2 | 2.0 |
Claims (5)
1. a kind of method that thermoplastic shaping prepares LED thin-film materials, by by the solid precursors of VI races precursor and II races precursor
Solid precursors sheared respectively with thermoplastic polymer in the screw rod 1, screw rod 2 of particular design scattered, it is special to be then fed into
In the screw rod 3 of design, while monocrystalline quantum point condition semiconductor is added, the solid precursors of VI races precursor and consolidating for II races precursor
Reaction in-situ occurs in thermoplastic polymer systems for body predecessor, using monocrystalline quantum dot as crystal growth core, no substrate growth,
Large area LED thin-film materials are formed, are comprised the following steps that：
（1）Screw rod 1 is designed, by the solid precursors of VI races precursor and thermoplastic polymer by certain mass ratio in screw rod 1
Sheared in extrusion equipment scattered；Screw rod 2 is designed, the solid precursors of II races precursor and thermoplastic polymer are pressed into certain quality
It is more scattered than being sheared in the extrusion equipment of screw rod 2；Clipped mixed solid precursors should realize that nanomorphic disperses；
（2）Screw rod 3 is designed, by step（1）Two kinds of mixtures of gained are proportionally added into the extrusion equipment of screw rod 3, simultaneously
Monocrystalline quantum point condition semiconductor is added, the solid precursors of VI races precursor are with the solid precursors of II races precursor in thermoplastic poly
Reaction in-situ occurs in compound system, using monocrystalline quantum dot as crystal growth core, no substrate growth, you can form large area LED
Thin-film material；
The screw rod 1 and screw rod 2 are barrier screw, and its designing points is：It is equidistant on the face of cylinder of screw rod to open up two
Group cannelure, two groups of grooves are alternate, and the faceted pebble for separation is different from the gap length of two barrels, and one is normal screw rod and material
The gap of cylinder, one is more than this value, and the outlet of feed well is closed in axis direction, and the entrance of blow tank is closed in axis direction；
The barrier segment length of the screw rod 1 and screw rod 2 is 1 ~ 2 times of screw diameter；The barrier of the new screw 1 and new screw 2
Section set location be：When making material arrival barrier screen, the mass fraction of thermoplastic polymer residual solid phase is 20% ~ 30%；
The screw rod 3 is pin bypass type screw rod, and its designing points is：Many juts, the side of being shaped as are set on screw rod
Shape or cylinder, by the way of annular array, the stream in screw channel is split, changes the flow condition of material, strengthen being kneaded
And homogenizing；In the screw rod 3, the homogenizing zone for being arranged to screw rod of pin；In the screw rod 3, screw diameter is increased to by 50mm
200mm, corresponding pin diameter increase to 6mm by 3mm；In the screw rod 3, the spacing between pin is no more than pin diameter
1.5 again；In the screw rod 3, screw diameter increases to 200mm by 50mm, and corresponding pin quantity increases to 50 by 30.
2. a kind of method that thermoplastic shaping prepares LED thin-film materials according to claim 1, it is characterised in that：Step（1）Institute
The solid precursors for stating VI races precursor are elemental sulfur, vulcanization trialkenyl phosphine, alkyl amino sulfide, alkenyl amino sulfide, selenium
Change trialkyl phosphine, selenizing trialkenyl phosphine, alkyl amino selenides, alkenyl amino selenides, telluride trialkyl phosphine, telluride trialkenyl
One or several kinds in phosphine or alkyl amino tellurides.
3. a kind of method that thermoplastic shaping prepares LED thin-film materials according to claim 1, it is characterised in that：Step（1）Institute
The solid precursors for stating II races precursor are zinc methide, diethyl zinc, zinc polycarboxylate, zinc bromide, zinc chloride, zinc fluoride, carbonic acid
Zinc, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, dimethyl cadmium, diethyl cadmium, cadmium oxide, cadmium carbonate, second
One in sour cadmium, cadmium fluoride, caddy, cadmium iodide, cadmium bromide, cadmium perchlorate, cadmium phosphide, cadmium nitrate, cadmium sulfate or carboxylic acid cadmium
Kind is several.
4. a kind of method that thermoplastic shaping prepares LED thin-film materials according to claim 1, it is characterised in that：Step（1）Institute
Thermoplastic polymer is stated as polyethylene, polypropylene, polystyrene, polymethyl methacrylate, polyvinyl chloride, makrolon, poly-
One kind in urethane.
5. a kind of method that thermoplastic shaping prepares LED thin-film materials according to claim 1, it is characterised in that：Step（2）Institute
Monocrystalline quantum point condition semiconductor is stated as one kind in spherical GaN quantum dots, AlN quantum dots, InN quantum dots.
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| CN104022175A (en) * | 2014-06-20 | 2014-09-03 | 中天光伏材料有限公司 | Fluorescent fluorine-containing polymer film for solar cell packaging and preparation method thereof |
| CN104927686A (en) * | 2015-05-21 | 2015-09-23 | 杭州福斯特光伏材料股份有限公司 | Solar cell packaging adhesive film with high light conversion efficiency |
| CN106279924A (en) * | 2016-08-30 | 2017-01-04 | 佛山安亿纳米材料有限公司 | A kind of sulfur indium compound system quantum dot light conversion film and preparation method thereof |
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| CN104022175A (en) * | 2014-06-20 | 2014-09-03 | 中天光伏材料有限公司 | Fluorescent fluorine-containing polymer film for solar cell packaging and preparation method thereof |
| CN104927686A (en) * | 2015-05-21 | 2015-09-23 | 杭州福斯特光伏材料股份有限公司 | Solar cell packaging adhesive film with high light conversion efficiency |
| CN106279924A (en) * | 2016-08-30 | 2017-01-04 | 佛山安亿纳米材料有限公司 | A kind of sulfur indium compound system quantum dot light conversion film and preparation method thereof |
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Effective date of registration: 20240228 Address after: 221400, 1st Floor, 2 #, Da Health Industrial Park, Xiyi High tech Industrial Development Zone, Xinyi City, Xuzhou City, Jiangsu Province Patentee after: Xuzhou Yizhilan Optoelectronic Technology Co.,Ltd. Country or region after: China Address before: 221400 North of Taihangshan Road, Beigou Town, Xinyi City, Xuzhou City, Jiangsu Province, East of Pearl River Road Patentee before: XINYI LINGJUN OPTOELECTRONICS SCIENCE AND TECHNOLOGY Co.,Ltd. Country or region before: China |
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