CN107359391A - Multichannel silicon substrate switch filter group and preparation method thereof - Google Patents
Multichannel silicon substrate switch filter group and preparation method thereof Download PDFInfo
- Publication number
- CN107359391A CN107359391A CN201710399394.6A CN201710399394A CN107359391A CN 107359391 A CN107359391 A CN 107359391A CN 201710399394 A CN201710399394 A CN 201710399394A CN 107359391 A CN107359391 A CN 107359391A
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- silicon substrate
- layer
- filter group
- silicon
- switch
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
Abstract
The invention discloses a kind of multichannel silicon substrate switch filter group and preparation method thereof, is related to semiconductor and technical field of microelectronic devices, including silicon substrate carrier layer, silicon substrate lead finish, silicon substrate housing layer, silicon substrate cover layer and switch chip；The present invention makes switch filter group using silicon substrate MEMS technology, switch chip is embedded on silicon substrate carrier layer, and using the interdigital wave filter of silicon substrate MEMS structure, silicon based substrate has higher dielectric constant, therefore the wave filter of small size can be made on silicon based substrate, use strip lines configuration simultaneously, the wave filter processed using MEMS technology, further reduce the volume of wave filter group, by high-precision semiconductor processing technology, micron order mismachining tolerance can be realized, so as to improve the performance of wave filter group, wave filter group uses switch chip, reduce the power consumption of wave filter group.
Description
Technical field
The present invention relates to semiconductor and technical field of microelectronic devices, more particularly to a kind of multichannel silicon substrate switch filtering
Device group and preparation method thereof.
Background technology
With the development of broadband communications technologies, frequency-selective network is widely used in the systems such as frequency synthesizer, emitter, receiver
In.Frequency-selective network requires that frequency selection signal frequency spectrum will have the performances such as high purity, quick tracking frequency change, broadband.Switch filter
Ripple device group by variable connector wave filter group into, required wave band is switched to by switches set, disclosure satisfy that broadband connections will
Ask.As the important microwave device in frequency-selective network, in the entire system in occupation of considerable status.In order to ensure entirety
The signal to noise ratio of system, it is desirable to have relatively low insertion loss.In order to suppress strong interference signal, to require that single filter has very narrow
Bandwidth, steep intermediate zone and very high stopband suppress.Due to input and output wave filter per road be it is independent, gate it is any one
During path filter, influence of the port Impedance conversion to other channels it is not related to, therefore do not need complicated passive filtering
Device group matches, and can form N with arbitrary single filter and select 1 wave filter group.Contactor is relatively also fairly simple.Combinational network
Network is made up of the structure of switch arrays+wave filter+switch arrays.
Traditional switch wave filter group is bulky, high energy consumption, influences miniaturization, the miniaturization of electronic system.
The content of the invention
The technical problem to be solved in the present invention is to be directed to above-mentioned the deficiencies in the prior art, there is provided a kind of multichannel silicon substrate switch
Wave filter group and preparation method thereof, solve the problems, such as that traditional switch wave filter group volume is big, power consumption is high, there is switch filter group
The characteristics of small volume, low power consumption.
In order to solve the above technical problems, the technical solution used in the present invention is：A kind of multichannel silicon substrate switch filter
Group, including silicon substrate carrier layer, silicon substrate lead finish, silicon substrate housing layer, silicon substrate cover layer and switch chip；Silicon substrate carrier layer,
Silicon substrate lead finish, silicon substrate housing layer, silicon substrate cover layer stack gradually connection, silicon substrate carrier layer, silicon substrate lead from bottom to top
Protective layer, silicon substrate housing layer and silicon substrate cover layer are equipped with through hole, silicon substrate carrier layer, silicon substrate lead finish, silicon substrate housing layer
Metal level is equipped with silicon substrate cover layer upper surface；Switch chip is arranged on silicon substrate carrier layer, switch chip by lead and
Silicon substrate lead finish is connected, and wave filter is provided between silicon substrate lead finish and silicon substrate housing layer.
Preferably, the silicon substrate carrier layer, silicon substrate lead finish, silicon substrate housing layer and silicon substrate cover layer thickness are
250 microns.
Preferably, the through-hole diameter is 120 microns.
Preferably, the metal layer thickness is 3.5 microns.
Preferably, the switch chip is gallium arsenide chips.
Preferably, the switch chip includes input single pole multiple throw chip and output single pole multiple throw chip.
Preferably, the wave filter is interdigital passive filter.
Preferably, the lead is bonding gold wire.
A kind of preparation method of multichannel silicon substrate switch filter group, comprises the following steps：
Photoresist is coated on the surface of silicon based substrate, forms mask layer, silicon based substrate includes silicon substrate carrier layer, silicon substrate pilot protection
Layer, silicon substrate housing layer and silicon substrate cover layer；
Through hole is manufactured on silicon based substrate；
Photoetching development plating is carried out to the surface of silicon based substrate, forms metal erosion figure；
Metal level is thickeied to the electroplating surface of silicon based substrate；
Silicon substrate carrier layer and silicon substrate lead finish are subjected to wafer scale bonding connection, silicon substrate lead finish and silicon substrate housing layer
Wafer scale bonding connection is carried out, interdigital wave filter is formed in the contact surface of silicon substrate lead finish and silicon substrate housing layer；
Install on switch chip to silicon substrate carrier layer, the interconnection of switch chip and silicon substrate lead finish is realized with bonding gold wire；
Silicon substrate cover layer is entered again with silicon substrate carrier layer, silicon substrate lead finish and the silicon substrate housing layer being bonded by wafer scale
Row wafer scale is bonded, and silicon substrate carrier layer, silicon substrate lead finish, silicon substrate housing layer and silicon substrate cover layer stack gradually from bottom to top
Connection.
Preferably, deep reaction ion etching technique manufacture through hole is utilized on the silicon based substrate.
It is using beneficial effect caused by above-mentioned technical proposal：The present invention makes switch filter using silicon substrate MEMS technology
Ripple device group, switch chip is embedded on silicon substrate carrier layer, and using the interdigital wave filter of silicon substrate MEMS structure, silicon based substrate tool
There is higher dielectric constant, therefore the wave filter of small size can be made on silicon based substrate, while use strip lines configuration, should
The wave filter processed with MEMS technology, further reduces the volume of wave filter group, can by high-precision semiconductor processing technology
To realize micron order mismachining tolerance, so as to improve the performance of wave filter group, wave filter group uses switch chip, reduces wave filter
The power consumption of group.
Brief description of the drawings
Fig. 1 is the operation principle block diagram of multichannel silicon substrate switch filter group of the present invention.
Fig. 2 is the sectional view of multichannel silicon substrate switch filter group of the present invention.
Fig. 3 is wave filter group preparation method logical flow chart of the present invention.
In figure：1st, silicon substrate carrier layer；2nd, silicon substrate lead finish；3rd, silicon substrate housing layer；4th, silicon substrate cover layer；5th, metal
Layer；6th, switch chip；7th, through hole；8th, bonding gold wire.
Embodiment
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description, but the protection model of the present invention
Enclose be not limited to it is as described below.
As depicted in figs. 1 and 2, the operation principle block diagram and section view of multichannel silicon substrate switch filter group respectively of the present invention
Figure, multichannel silicon substrate switch filter group include silicon substrate carrier layer 1, silicon substrate lead finish 2, silicon substrate housing layer 3, silicon substrate cover plate
Layer 4 and switch chip 6；Silicon substrate carrier layer 1, silicon substrate lead finish 2, silicon substrate housing layer 3 and silicon substrate cover layer 4 from bottom to top according to
Secondary to stack connection, silicon substrate carrier layer 1, silicon substrate lead finish 2, silicon substrate housing layer 3 and silicon substrate cover layer 4 are equipped with through hole 7, real
The now transmission of signal between layers, in silicon substrate carrier layer 1, silicon substrate lead finish 2, silicon substrate housing layer 3 and silicon substrate cover layer 4
Surface is equipped with metal level 5；Switch chip 6 is arranged on silicon substrate carrier layer 1, and switch chip 6 is drawn by bonding gold wire 8 and silicon substrate
Line protective layer 2 is connected, and interdigital passive filter is provided between silicon substrate lead finish 2 and silicon substrate housing layer 3.
There is the characteristics of rapid reaction, power consumption is low using switch chip 6 in the present invention, it is whole so as to reduce wave filter group
The power consumption of system system, while the reflection speed of system is improved, strengthen the performance of wave filter group.Simultaneously silicon substrate is employed in the present invention
The interdigital wave filter of MEMS structure, there is the characteristics of small with interior differential loss, Out-of-band rejection is high, enhance the overall property of wave filter group
Can, chip installation simultaneously is pounded package system is carried out on silicon based substrate, reduce the volume of total system with this.
Switch chip 6 is gallium arsenide chips, including input single pole multiple throw chip and output single pole multiple throw chip,
The N roads input of frequency selection signal control circuit driving switch chip 6 is arranged to turn on during work, and others input, output are set
For cut-off, make N way switch and wave filter is in running order and the wave filter on other roads is opened due to corresponding input, output
Close cut-off and be in the off state being stopped.
Silicon based substrate thickness is 250 microns in the present invention, 7 a diameter of 120 microns of through hole, and the thickness of metal level 5 is 3.5 micro-
Rice.
Switch filter group is made using silicon substrate MEMS technology, switch chip is embedded on silicon substrate carrier layer, and is used
The interdigital wave filter of silicon substrate MEMS structure, silicon based substrate has higher dielectric constant, therefore can be made on silicon based substrate
The wave filter of small size, while strip lines configuration is used, the wave filter processed using MEMS technology, further reduce wave filter
The volume of group, by high-precision semiconductor processing technology, it is possible to achieve micron order mismachining tolerance, so as to improve the property of wave filter group
Can, wave filter group uses switch chip, reduces the power consumption of wave filter group.
A kind of preparation method of multichannel silicon substrate switch filter group, as shown in figure 3, being wave filter group making side of the present invention
Method logical flow chart, comprises the following steps：
Step S301, photoresist is coated in the upper and lower surface of silicon based substrate, forms mask layer, silicon based substrate includes silicon substrate carrier layer
1st, silicon substrate lead finish 2, silicon substrate housing layer 3 and silicon substrate cover layer 4；Step S302, through hole 7 is manufactured on silicon based substrate；
Step S303, photoetching development plating is carried out to the upper and lower surface of silicon based substrate, forms metal erosion figure；
Step S304, the upper and lower surface plating to silicon based substrate thicken metal level 5；
Step S305, silicon substrate carrier layer 1 and silicon substrate lead finish 2 are subjected to wafer scale bonding connection, silicon substrate lead finish 2
Wafer scale bonding connection is carried out with silicon substrate housing layer 3, is formed and pitched in the contact surface of silicon substrate lead finish 2 and silicon substrate housing layer 3
Refer to wave filter；
Step S306, install on switch chip 6 to silicon substrate carrier layer 1, switch chip 6 and silicon substrate lead are realized with bonding gold wire 8
The interconnection of protective layer 2；
Step S307, silicon substrate carrier layer 1, silicon substrate lead finish 2 and the silicon substrate that silicon substrate cover layer 4 is bonded with by wafer scale
Housing layer 3 carries out wafer scale bonding, silicon substrate carrier layer 1, silicon substrate lead finish 2, silicon substrate housing layer 3 and silicon substrate cover layer again
4 stack gradually connection from bottom to top.
Switch filter group is made using silicon substrate MEMS technology, switch chip is embedded on silicon substrate carrier layer, and is used
The interdigital wave filter of silicon substrate MEMS structure, silicon based substrate has higher dielectric constant, therefore can be made on silicon based substrate
The wave filter of small size, while strip lines configuration is used, the wave filter processed using MEMS technology, further reduce wave filter
The volume of group, by high-precision semiconductor processing technology, it is possible to achieve micron order mismachining tolerance, so as to improve the property of wave filter group
Can, wave filter group uses switch chip, reduces the power consumption of wave filter group.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.
Claims (10)
- A kind of 1. multichannel silicon substrate switch filter group, it is characterised in that：Including silicon substrate carrier layer（1）, silicon substrate lead finish （2）, silicon substrate housing layer（3）, silicon substrate cover layer（4）And switch chip（6）；Silicon substrate carrier layer（1）, silicon substrate lead finish（2）、 Silicon substrate housing layer（3）With silicon substrate cover layer（4）Connection, silicon substrate carrier layer are stacked gradually from bottom to top（1）, silicon substrate lead finish （2）, silicon substrate housing layer（3）With silicon substrate cover layer（4）It is equipped with through hole（7）, silicon substrate carrier layer（1）, silicon substrate lead finish （2）, silicon substrate housing layer（3）With silicon substrate cover layer（4）Upper surface is equipped with metal level（5）；Switch chip（6）Carried installed in silicon substrate Body layer（1）On, switch chip（6）Pass through lead and silicon substrate lead finish（2）Connection, silicon substrate lead finish（2）And silicon substrate Housing layer（3）Between be provided with wave filter.
- 2. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that：The silicon substrate carrier layer（1）、 Silicon substrate lead finish（2）, silicon substrate housing layer（3）With silicon substrate cover layer（4）Thickness is 250 microns.
- 3. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that：The through hole（7）It is a diameter of 120 microns.
- 4. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that：The metal level（5）Thickness For 3.5 microns.
- 5. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that：The switch chip（6）For Gallium arsenide chips.
- 6. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that：The switch chip（6）Bag Include input single pole multiple throw chip and output single pole multiple throw chip.
- 7. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that：The wave filter is interdigital nothing Source filter.
- 8. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that：The lead is bonding gold wire （8）.
- A kind of 9. preparation method of multichannel silicon substrate switch filter group, it is characterised in that：Comprise the following steps：Photoresist is coated on silicon based substrate surface, forms mask layer, silicon based substrate includes silicon substrate carrier layer（1）, silicon substrate lead protect Sheath（2）, silicon substrate housing layer（3）With silicon substrate cover layer（4）；Through hole is manufactured on silicon based substrate（7）；Photoetching development plating is carried out to the surface of silicon based substrate, forms metal erosion figure；Metal level is thickeied to the electroplating surface of silicon based substrate（5）；By silicon substrate carrier layer（1）With silicon substrate lead finish（2）Carry out wafer scale bonding connection, silicon substrate lead finish（2）With Silicon substrate housing layer（3）Wafer scale bonding connection is carried out, in silicon substrate lead finish（2）With silicon substrate housing layer（3）Contact surface shape Into interdigital wave filter；Switch chip is installed（6）To silicon substrate carrier layer（1）On, use bonding gold wire（8）Realize switch chip（6）Protected with silicon substrate lead Sheath（2）Interconnection；By silicon substrate cover layer（4）The silicon substrate carrier layer being bonded with by wafer scale（1）, silicon substrate lead finish（2）Outside silicon substrate Frame layer（3）Wafer scale bonding, silicon substrate carrier layer are carried out again（1）, silicon substrate lead finish（2）, silicon substrate housing layer（3）And silicon substrate Cover layer（4）Connection is stacked gradually from bottom to top.
- 10. the preparation method of multichannel silicon substrate switch filter group according to claim 9, it is characterised in that：Described Deep reaction ion etching technique manufacture through hole is utilized on silicon based substrate（7）.
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| CN201710399394.6A CN107359391B (en) | 2017-05-31 | 2017-05-31 | Multichannel silicon substrate switch filter group and preparation method thereof |
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| CN201710399394.6A CN107359391B (en) | 2017-05-31 | 2017-05-31 | Multichannel silicon substrate switch filter group and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107911081A (en) * | 2017-12-15 | 2018-04-13 | 成都爱科特科技发展有限公司 | A kind of frequency agility, low-power consumption frequency source |
| CN109586683A (en) * | 2018-10-25 | 2019-04-05 | 安徽承鼎电子科技有限公司 | A kind of switch filter device |
| CN111371431A (en) * | 2020-03-20 | 2020-07-03 | 上海航天电子通讯设备研究所 | Three-dimensional packaged multilayer stacked structure switch filter bank |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050212625A1 (en) * | 2004-03-09 | 2005-09-29 | Celinski Zbigniew J | High frequency magnetic thin film filter |
| CN102361113A (en) * | 2011-06-21 | 2012-02-22 | 中国电子科技集团公司第十三研究所 | Silicon-based multi-layer cavity filter |
| CN103779642A (en) * | 2014-01-24 | 2014-05-07 | 中国电子科技集团公司第五十五研究所 | Three-dimensional integrated micro-shielding MEMS filter bank of multiplayer stacking structure |
| CN204333174U (en) * | 2015-01-23 | 2015-05-13 | 安徽奇锦电子科技有限公司 | A kind of Hexamermis spp switch filter group |
| CN206059598U (en) * | 2016-08-24 | 2017-03-29 | 成都九洲迪飞科技有限责任公司 | A kind of X-band low-loss high out-of-side rejection switch filtering component |
-
2017
- 2017-05-31 CN CN201710399394.6A patent/CN107359391B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050212625A1 (en) * | 2004-03-09 | 2005-09-29 | Celinski Zbigniew J | High frequency magnetic thin film filter |
| CN102361113A (en) * | 2011-06-21 | 2012-02-22 | 中国电子科技集团公司第十三研究所 | Silicon-based multi-layer cavity filter |
| CN103779642A (en) * | 2014-01-24 | 2014-05-07 | 中国电子科技集团公司第五十五研究所 | Three-dimensional integrated micro-shielding MEMS filter bank of multiplayer stacking structure |
| CN204333174U (en) * | 2015-01-23 | 2015-05-13 | 安徽奇锦电子科技有限公司 | A kind of Hexamermis spp switch filter group |
| CN206059598U (en) * | 2016-08-24 | 2017-03-29 | 成都九洲迪飞科技有限责任公司 | A kind of X-band low-loss high out-of-side rejection switch filtering component |
Non-Patent Citations (1)
| Title |
|---|
| 翟琼华: "硅基MEMS微波带通滤波器的设计及制备", 《万方学位论文数据库》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107911081A (en) * | 2017-12-15 | 2018-04-13 | 成都爱科特科技发展有限公司 | A kind of frequency agility, low-power consumption frequency source |
| CN109586683A (en) * | 2018-10-25 | 2019-04-05 | 安徽承鼎电子科技有限公司 | A kind of switch filter device |
| CN111371431A (en) * | 2020-03-20 | 2020-07-03 | 上海航天电子通讯设备研究所 | Three-dimensional packaged multilayer stacked structure switch filter bank |
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| CN107359391B (en) | 2019-05-14 |
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