CN107359391B - Multichannel silicon substrate switch filter group and preparation method thereof - Google Patents
Multichannel silicon substrate switch filter group and preparation method thereof Download PDFInfo
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- CN107359391B CN107359391B CN201710399394.6A CN201710399394A CN107359391B CN 107359391 B CN107359391 B CN 107359391B CN 201710399394 A CN201710399394 A CN 201710399394A CN 107359391 B CN107359391 B CN 107359391B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
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Abstract
The invention discloses a kind of multichannel silicon substrate switch filter groups and preparation method thereof, are related to semiconductor and technical field of microelectronic devices, including silicon substrate carrier layer, silicon substrate lead finish, silicon substrate outer frame layer, silicon substrate cover layer and switch chip；The present invention makes switch filter group using silicon substrate MEMS technology, switch chip is embedded on silicon substrate carrier layer, and using the interdigital filter of silicon substrate MEMS structure, silicon based substrate dielectric constant with higher, therefore the filter of small size can be made on silicon based substrate, strip lines configuration is used simultaneously, the filter processed using MEMS technology, further reduce the volume of filter group, by high-precision semiconductor processing technology, micron order mismachining tolerance may be implemented, to improve the performance of filter group, filter group uses switch chip, reduce the energy consumption of filter group.
Description
Technical field
The present invention relates to semiconductors and technical field of microelectronic devices, more particularly to a kind of multichannel silicon substrate switch filtering
Device group and preparation method thereof.
Background technique
With the development of broadband communications technologies, frequency-selective network is widely used in the systems such as frequency synthesizer, transmitter, receiver
In.Frequency-selective network requires frequency selection signal frequency spectrum to have the performances such as purity is high, quick tracking frequency variation, broadband.Switch filter
Wave device group is made of variable connector filter, and required wave band is switched to by switching group, can satisfy wanting for broadband connections
It asks.As the important microwave device in frequency-selective network, in the entire system in occupation of considerable status.In order to guarantee entirety
The signal-to-noise ratio of system, it is desirable that have lower insertion loss.It is very narrow in order to inhibit strong interference signal that single filter is required to have
Bandwidth, steep intermediate zone and very high stopband inhibit.Due to the every road of the filter of input and output be it is independent, gate it is any one
During path filter, influence of the port Impedance transformation to other channels it is not related to, therefore do not need complicated passive filtering
The matching of device group can constitute N with arbitrary single filter and select 1 filter group.Circuit switch is relatively also fairly simple.Combinational network
Network is made of switch arrays+filter+switch arrays structure.
Traditional switch filter group is bulky, and energy consumption is high, influences miniaturization, the miniaturization of electronic system.
Summary of the invention
The technical problem to be solved by the present invention is in view of the above shortcomings of the prior art, provide a kind of multichannel silicon substrate switch
Filter group and preparation method thereof solves the problems, such as that traditional switch filter group volume is big, energy consumption is high, has switch filter group
Feature small in size, energy consumption is low.
In order to solve the above technical problems, the technical solution used in the present invention is: a kind of multichannel silicon substrate switch filter
Group, including silicon substrate carrier layer, silicon substrate lead finish, silicon substrate outer frame layer, silicon substrate cover layer and switch chip；Silicon substrate carrier layer,
Silicon substrate lead finish, silicon substrate outer frame layer, silicon substrate cover layer stack gradually connection, silicon substrate carrier layer, silicon substrate lead from bottom to top
Protective layer, silicon substrate outer frame layer and silicon substrate cover layer are equipped with through-hole, silicon substrate carrier layer, silicon substrate lead finish, silicon substrate outer frame layer
Metal layer is equipped with silicon substrate cover layer upper surface；Switch chip is mounted on silicon substrate carrier layer, switch chip by lead and
The connection of silicon substrate lead finish, is equipped with filter between silicon substrate lead finish and silicon substrate outer frame layer.
Preferably, the silicon substrate carrier layer, silicon substrate lead finish, silicon substrate outer frame layer and silicon substrate cover layer thickness are
250 microns.
Preferably, the through-hole diameter is 120 microns.
Preferably, the metal layer thickness is 3.5 microns.
Preferably, the switch chip is gallium arsenide chips.
Preferably, the switch chip includes input single pole multiple throw chip and output single pole multiple throw chip.
Preferably, the filter is interdigital passive filter.
Preferably, the lead is bonding gold wire.
A kind of production method of multichannel silicon substrate switch filter group, comprising the following steps:
Photoresist is coated on the surface of silicon based substrate, forms mask layer, silicon based substrate includes silicon substrate carrier layer, silicon substrate lead
Protective layer, silicon substrate outer frame layer and silicon substrate cover layer；
Through-hole is manufactured on silicon based substrate；
Photoetching development plating is carried out to the surface of silicon based substrate, forms metal erosion figure；
Metal layer is thickeied to the electroplating surface of silicon based substrate；
Silicon substrate carrier layer and silicon substrate lead finish are carried out wafer scale bonding to connect, outside silicon substrate lead finish and silicon substrate
Frame layer carries out wafer scale bonding connection, forms interdigital filter in the contact surface of silicon substrate lead finish and silicon substrate outer frame layer；
It installs on switch chip to silicon substrate carrier layer, realizes the mutual of switch chip and silicon substrate lead finish with bonding gold wire
Connection；
Silicon substrate carrier layer, silicon substrate lead finish and the silicon substrate outer frame layer that silicon substrate cover layer is bonded with by wafer scale are again
Secondary progress wafer scale bonding, silicon substrate carrier layer, silicon substrate lead finish, silicon substrate outer frame layer and silicon substrate cover layer are from bottom to top successively
Stack connection.
Preferably, through-hole is manufactured using deep reaction ion etching technique on the silicon based substrate.
The beneficial effects of adopting the technical scheme are that the present invention utilizes the production switch filter of silicon substrate MEMS technology
Wave device group, switch chip is embedded on silicon substrate carrier layer, and using the interdigital filter of silicon substrate MEMS structure, silicon based substrate tool
There is higher dielectric constant, therefore the filter of small size can be made on silicon based substrate, while using strip lines configuration, answers
The filter processed with MEMS technology, further reduces the volume of filter group, can by high-precision semiconductor processing technology
To realize micron order mismachining tolerance, to improve the performance of filter group, filter group uses switch chip, reduces filter
The energy consumption of group.
Detailed description of the invention
Fig. 1 is the working principle block diagram of multichannel silicon substrate switch filter group of the present invention.
Fig. 2 is the cross-sectional view of multichannel silicon substrate switch filter group of the present invention.
Fig. 3 is filter group production method logical flow chart of the present invention.
In figure: 1, silicon substrate carrier layer；2, silicon substrate lead finish；3, silicon substrate outer frame layer；4, silicon substrate cover layer；5, metal
Layer；6, switch chip；7, through-hole；8, bonding gold wire.
Specific embodiment
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments, but protection model of the invention
Enclose be not limited to it is as described below.
As depicted in figs. 1 and 2, the working principle block diagram and section view of multichannel silicon substrate switch filter group respectively of the present invention
Figure, multichannel silicon substrate switch filter group includes silicon substrate carrier layer 1, silicon substrate lead finish 2, silicon substrate outer frame layer 3, silicon substrate cover board
Layer 4 and switch chip 6；Silicon substrate carrier layer 1, silicon substrate lead finish 2, silicon substrate outer frame layer 3 and silicon substrate cover layer 4 from bottom to top according to
Secondary stacking connection, silicon substrate carrier layer 1, silicon substrate lead finish 2, silicon substrate outer frame layer 3 and silicon substrate cover layer 4 are equipped with through-hole 7, real
The now transmission of signal between layers, in silicon substrate carrier layer 1, silicon substrate lead finish 2, silicon substrate outer frame layer 3 and silicon substrate cover layer 4
Surface is equipped with metal layer 5；Switch chip 6 is mounted on silicon substrate carrier layer 1, and switch chip 6 is drawn by bonding gold wire 8 and silicon substrate
Line protective layer 2 connects, and interdigital passive filter is equipped between silicon substrate lead finish 2 and silicon substrate outer frame layer 3.
Have the characteristics that rapid reaction, energy consumption are low using switch chip 6 in the present invention, it is whole so as to reduce filter group
The energy consumption of system system, while the reflection speed of system is improved, enhance the performance of filter group.Silicon substrate is used in the present invention simultaneously
The interdigital filter of MEMS structure has with interior differential loss small, the high feature of Out-of-band rejection, enhances the property of filter group entirety
Can, chip installation simultaneously is pounded and carries out package system on silicon based substrate, reduces the volume of total system with this.
Switch chip 6 is gallium arsenide chips, including inputs single pole multiple throw chip and output single pole multiple throw chip,
The road the N input of frequency selection signal control circuit driving switch chip 6 is set as being connected when work, others input, output setting
For cut-off, make N way switch and filter is in running order and the filter on other roads is due to inputting accordingly, exporting and open
It closes cut-off and is in the off state to stop working.
Silicon based substrate is in the present invention with a thickness of 250 microns, and 7 diameter of through-hole is 120 microns, and metal layer 5 is micro- with a thickness of 3.5
Rice.
Switch filter group is made using silicon substrate MEMS technology, switch chip is embedded on silicon substrate carrier layer, and is used
The interdigital filter of silicon substrate MEMS structure, silicon based substrate dielectric constant with higher, therefore can be made on silicon based substrate
The filter of small size, while strip lines configuration is used, using the filter that MEMS technology is processed, further reduce filter
Micron order mismachining tolerance may be implemented by high-precision semiconductor processing technology in the volume of group, to improve the property of filter group
Can, filter group uses switch chip, reduces the energy consumption of filter group.
A kind of production method of multichannel silicon substrate switch filter group, as shown in figure 3, being filter group of the present invention production side
Method logical flow chart, comprising the following steps:
Step S301 coats photoresist in the upper and lower surface of silicon based substrate, forms mask layer, and silicon based substrate includes that silicon substrate carries
Body layer 1, silicon substrate lead finish 2, silicon substrate outer frame layer 3 and silicon substrate cover layer 4；Step S302, manufactures through-hole on silicon based substrate
7；
Step S303 carries out photoetching development plating to the upper and lower surface of silicon based substrate, forms metal erosion figure；
Step S304 thickeies metal layer 5 to the upper and lower surface plating of silicon based substrate；
Silicon substrate carrier layer 1 and silicon substrate lead finish 2 are carried out wafer scale bonding connection by step S305, and silicon substrate lead is protected
Sheath 2 and silicon substrate outer frame layer 3 carry out wafer scale bonding connection, in the contact surface shape of silicon substrate lead finish 2 and silicon substrate outer frame layer 3
At interdigital filter；
Step S306 is installed on switch chip 6 to silicon substrate carrier layer 1, realizes switch chip 6 and silicon substrate with bonding gold wire 8
The interconnection of lead finish 2；
Step S307, the silicon substrate carrier layer 1 that silicon substrate cover layer 4 is bonded with by wafer scale, silicon substrate lead finish 2 and
Silicon substrate outer frame layer 3 carries out wafer scale bonding, silicon substrate carrier layer 1, silicon substrate lead finish 2, silicon substrate outer frame layer 3 and silicon substrate lid again
Plate layer 4 stacks gradually connection from bottom to top.
Switch filter group is made using silicon substrate MEMS technology, switch chip is embedded on silicon substrate carrier layer, and is used
The interdigital filter of silicon substrate MEMS structure, silicon based substrate dielectric constant with higher, therefore can be made on silicon based substrate
The filter of small size, while strip lines configuration is used, using the filter that MEMS technology is processed, further reduce filter
Micron order mismachining tolerance may be implemented by high-precision semiconductor processing technology in the volume of group, to improve the property of filter group
Can, filter group uses switch chip, reduces the energy consumption of filter group.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of multichannel silicon substrate switch filter group, it is characterised in that: including silicon substrate carrier layer (1), silicon substrate lead finish
(2), silicon substrate outer frame layer (3), silicon substrate cover layer (4) and switch chip (6)；Silicon substrate carrier layer (1), silicon substrate lead finish (2),
Silicon substrate outer frame layer (3) and silicon substrate cover layer (4) stack gradually connection, silicon substrate carrier layer (1), silicon substrate lead finish from bottom to top
(2), silicon substrate outer frame layer (3) and silicon substrate cover layer (4) are equipped with through-hole (7), silicon substrate carrier layer (1), silicon substrate lead finish
(2), silicon substrate outer frame layer (3) and silicon substrate cover layer (4) upper surface are equipped with metal layer (5)；Switch chip (6) is mounted on silicon substrate load
On body layer (1), switch chip (6) is connected by lead and silicon substrate lead finish (2), silicon substrate lead finish (2) and silicon substrate
Filter is equipped between outer frame layer (3).
2. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that: the silicon substrate carrier layer (1),
Silicon substrate lead finish (2), silicon substrate outer frame layer (3) and silicon substrate cover layer (4) thickness are 250 microns.
3. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that: through-hole (7) diameter is
120 microns.
4. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that: metal layer (5) thickness
It is 3.5 microns.
5. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that: the switch chip (6) is
Gallium arsenide chips.
6. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that: switch chip (6) packet
Include input single pole multiple throw chip and output single pole multiple throw chip.
7. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that: the filter is interdigital nothing
Source filter.
8. multichannel silicon substrate switch filter group according to claim 1, it is characterised in that: the lead is bonding gold wire
(8)。
9. a kind of production method of multichannel silicon substrate switch filter group, it is characterised in that: the following steps are included:
Photoresist is coated in silicon based substrate upper and lower surface, forms mask layer, silicon based substrate includes that silicon substrate carrier layer (1), silicon substrate are drawn
Line protective layer (2), silicon substrate outer frame layer (3) and silicon substrate cover layer (4)；
Through-hole (7) are manufactured on silicon based substrate；
Photoetching development plating is carried out to the upper and lower surface of silicon based substrate, forms metal erosion figure；
Metal layer (5) are thickeied to the upper and lower surface plating of silicon based substrate；
Silicon substrate carrier layer (1) and silicon substrate lead finish (2) are subjected to wafer scale bonding connection, silicon substrate lead finish (2) and
Silicon substrate outer frame layer (3) carries out wafer scale bonding connection, in the contact surface shape of silicon substrate lead finish (2) and silicon substrate outer frame layer (3)
At interdigital filter；
It installs on switch chip (6) to silicon substrate carrier layer (1), realizes that switch chip (6) and silicon substrate lead are protected with bonding gold wire (8)
The interconnection of sheath (2)；
Outside silicon substrate carrier layer (1), silicon substrate lead finish (2) and the silicon substrate that silicon substrate cover layer (4) is bonded with by wafer scale
Frame layer (3) carries out wafer scale bonding, silicon substrate carrier layer (1), silicon substrate lead finish (2), silicon substrate outer frame layer (3) and silicon substrate again
Cover layer (4) stacks gradually connection from bottom to top.
10. the production method of multichannel silicon substrate switch filter group according to claim 9, it is characterised in that: described
Deep reaction ion etching technique manufacture through-hole (7) is utilized on silicon based substrate.
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| CN201710399394.6A CN107359391B (en) | 2017-05-31 | 2017-05-31 | Multichannel silicon substrate switch filter group and preparation method thereof |
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| CN107359391B true CN107359391B (en) | 2019-05-14 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107911081A (en) * | 2017-12-15 | 2018-04-13 | 成都爱科特科技发展有限公司 | A kind of frequency agility, low-power consumption frequency source |
| CN109586683A (en) * | 2018-10-25 | 2019-04-05 | 安徽承鼎电子科技有限公司 | A kind of switch filter device |
| CN111371431B (en) * | 2020-03-20 | 2023-03-14 | 上海航天电子通讯设备研究所 | Three-dimensional packaged multilayer stacked structure switch filter bank |
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| CN102361113A (en) * | 2011-06-21 | 2012-02-22 | 中国电子科技集团公司第十三研究所 | Silicon-based multi-layer cavity filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7583167B2 (en) * | 2004-03-09 | 2009-09-01 | The Regents Of The University Of Colorado | High frequency magnetic thin film filter |
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