CN107359283A - Preparation method, array base palte, display panel and the display device of array base palte - Google Patents
Preparation method, array base palte, display panel and the display device of array base palte Download PDFInfo
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- CN107359283A CN107359283A CN201710585983.3A CN201710585983A CN107359283A CN 107359283 A CN107359283 A CN 107359283A CN 201710585983 A CN201710585983 A CN 201710585983A CN 107359283 A CN107359283 A CN 107359283A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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Abstract
The invention discloses the preparation method of array base palte, array base palte, display panel and display device, array base palte includes multiple pixel cells, pixel cell includes being arranged alternately first kind pixel cell and the second class pixel cell along line direction, first kind pixel cell and the second class pixel cell include the first sub-pixel unit, the second sub-pixel unit and the 3rd sub-pixel unit, first sub-pixel unit of adjacent first kind pixel cell and the second class pixel cell along the arrangement of line direction order is disposed adjacent, and method includes：First functional layer is formed using the first mask plate；Using forming the second functional layer in the first sub-pixel unit and the second sub-pixel unit of second mask plate in the first functional layer；Using the 3rd functional layer of formation in the first sub-pixel unit of the 3rd mask plate in the first functional layer；The 4th functional layer for covering whole pixel cells is formed using the 4th mask plate.Present invention reduces the machining accuracy of accurate evaporation mask plate, process costs are reduced.
Description
Technical field
The embodiment of the present invention belongs to display technology field, is related to a kind of preparation method of array base palte, array base palte, display
Panel and display device.
Background technology
In the technology for realizing Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) colorization,
Include two kinds of mainstream technologys, i.e. microcavity effect rgb pixel independence luminescence technology, and white luminescent material coordinates chromatic filter layer
Technology.
Wherein, microcavity effect rgb pixel, which independently lights, needs, using accurate evaporation mask plate and pixel technique of counterpoint, to prepare
The red, green, blue three-color light-emitting center of microcavity effect, realizes colorization, generally requires using the accurate evaporation mask plate of polylith, and
The positioning precision of sub-pixel is difficult to ensure that using the method for accurate evaporation mask plate, than the display surface of high pixel density relatively difficult to achieve
Plate, moreover, accurate evaporation mask plate is expensive, cost can be caused to increase.
The content of the invention
In view of this, the purpose of the present invention is to propose to a kind of preparation method of array base palte, array base palte, display panel and
Display device, to reduce the machining accuracy of accurate evaporation mask plate, reduce process costs.
To achieve the above object, the present invention adopts the following technical scheme that：
In a first aspect, the embodiments of the invention provide a kind of preparation method of array base palte,
The array base palte includes multiple pixel cells being arranged in array along line direction and column direction, the pixel cell
Including the first kind pixel cell and the second class pixel cell being arranged alternately along the line direction, the first kind pixel cell and
The second class pixel cell includes the first sub-pixel unit, the second sub-pixel unit and the 3rd sub-pixel unit, along described
The adjacent first kind pixel cell of line direction order arrangement and the first sub-pixel unit of the second class pixel cell
It is disposed adjacent, including：
Substrate is provided；
The first electrode being separated from each other is formed in each sub-pixel unit over the substrate；
Pixel defining layer is formed between the first electrode；
The is formed in side away from the substrate of the first electrode and the pixel defining layer using the first mask plate
One functional layer, wherein, the opening of first mask plate covers whole pixel cells；
Using the second mask plate in first sub-pixel unit of first functional layer away from the substrate side and
The second functional layer is formed in second sub-pixel unit, wherein, at least same opening of second mask plate at least covers
Two adjacent the first sub-pixel units；
Using the 3rd mask plate in first functional layer away from first sub-pixel unit of the substrate side
The 3rd functional layer is formed, wherein, the same opening of the 3rd mask plate covers two adjacent the first sub-pixel units；
The 4th functional layer for covering whole pixel cells is formed using the 4th mask plate；
Second electrode is formed in side of the 4th functional layer away from the substrate.
Second aspect, the embodiments of the invention provide a kind of array base palte, including：
Underlay substrate；
Multiple pixel cells, on the underlay substrate, the pixel cell is arranged along line direction and column direction in array
Cloth, the pixel cell includes the first kind pixel cell and the second class pixel cell being arranged alternately along the line direction, described
First kind pixel cell and the second class pixel cell include the first sub-pixel unit, the second sub-pixel unit and the 3rd son
Pixel cell, the adjacent first kind pixel cell arranged along line direction order and the second class pixel cell
First sub-pixel unit is disposed adjacent；
Each sub-pixel unit includes the first electrode that is separated from each other, formed with pixel defining layer between the first electrode；
Each sub-pixel unit also includes being formed at one of the first electrode and the pixel defining layer away from the substrate
The first functional layer stacked gradually, the 4th functional layer and the second electrode of side；
First sub-pixel unit also includes the be formed between first functional layer and the 4th functional layer
Two functional layers and the 3rd functional layer；
Second sub-pixel unit also includes the institute being formed between first functional layer and the 4th functional layer
State the second functional layer.
The third aspect, the embodiments of the invention provide a kind of display panel, including the array base described in above-mentioned second aspect
Plate and encapsulated layer.
Fourth aspect, the embodiments of the invention provide a kind of display device, including the display surface described in the above-mentioned third aspect
Plate.
The beneficial effects of the invention are as follows：The preparation method of array base palte provided by the invention, array base palte, display panel and
Display device, by the way that the first sub-pixel unit of adjacent first kind pixel cell and the second class pixel cell is disposed adjacent,
When forming functional layer in sub-pixel unit using mask plate, at least the above two adjacent sub-pixel units can be in mask
Functional layer is formed in the same opening of plate, thus, the outs open for the mask plate that the embodiment of the present invention uses is larger, can reduce system
The technology difficulty of standby mask plate, and then reduce process costs；Meanwhile to form the micro- of different cavity length in different subpixel unit
Cavity configuration, different functional layers are formed using different mask plates, such as using the second mask plate in the first functional layer away from substrate
The second functional layer is formed in the first sub-pixel unit and the second sub-pixel unit of side, using the 3rd mask plate in the first function
Layer forms the 3rd functional layer, thus, the mask plate that the embodiment of the present invention uses in the first sub-pixel unit away from substrate side
Opening between spacing it is bigger, further reduction can prepare the technology difficulty of mask plate, reduce process costs.To sum up, with
Prior art is compared, and the embodiment of the present invention reduces the use of accurate evaporation mask plate, reduces adding for accurate evaporation mask plate
Work precision, reduces process costs.
Brief description of the drawings
The exemplary embodiment of the present invention will be described in detail by referring to accompanying drawing below, make one of ordinary skill in the art
The above-mentioned and other feature and advantage of the present invention are become apparent from, in accompanying drawing：
Fig. 1 is the pixel arrangement schematic diagram of array base palte provided in an embodiment of the present invention；
Fig. 2 is the schematic flow sheet of the preparation method of array base palte provided in an embodiment of the present invention；
Fig. 3 a-3i are that cross-section structure corresponding to each flow of preparation method of array base palte provided in an embodiment of the present invention is illustrated
Figure；
Fig. 4 is the opening schematic diagram of the first mask plate provided in an embodiment of the present invention；
Fig. 5 is the opening schematic diagram of the second mask plate provided in an embodiment of the present invention；
Fig. 6 is the opening schematic diagram of the 3rd mask plate provided in an embodiment of the present invention；
Fig. 7 is the opening schematic diagram of the 4th mask plate provided in an embodiment of the present invention；
Fig. 8 is another pixel arrangement schematic diagram of array base palte provided in an embodiment of the present invention；
Fig. 9 is the opening schematic diagram of another the second mask plate provided in an embodiment of the present invention；
Figure 10 is another pixel arrangement schematic diagram of array base palte provided in an embodiment of the present invention；
Figure 11 is the opening schematic diagram of another the second mask plate provided in an embodiment of the present invention；
Figure 12 is the intrinsic luminescent spectrum figure of existing white-light emitting structure；
Figure 13 is the luminescent spectrum figure of pixel cell provided in an embodiment of the present invention；
Figure 14 is the cross-sectional view of array base palte corresponding with Fig. 8 provided in an embodiment of the present invention；
Figure 15 is the cross-sectional view of array base palte corresponding with Figure 10 provided in an embodiment of the present invention.
Embodiment
Further illustrate technical scheme below in conjunction with the accompanying drawings and by embodiment.It is appreciated that
It is that specific embodiment described herein is used only for explaining the present invention, rather than limitation of the invention.Further need exist for illustrating
, for the ease of description, part related to the present invention rather than entire infrastructure are illustrate only in accompanying drawing.
Fig. 1 is the pixel arrangement schematic diagram of array base palte provided in an embodiment of the present invention；Fig. 2 is that the embodiment of the present invention provides
Array base palte preparation method schematic flow sheet.As shown in figure 1, the array base palte of the embodiment of the present invention is including multiple along row
The pixel cell that direction and column direction are arranged in array, pixel cell include the first kind pixel cell being arranged alternately along line direction
10 and the second class pixel cell 20, the class pixel cell 20 of first kind pixel cell 10 and second include the first sub-pixel unit
11st, the second sub-pixel unit 12 and the 3rd sub-pixel unit 13, the adjacent first kind pixel cell arranged along line direction order
10 and second first sub-pixel unit 11 of class pixel cell 20 be disposed adjacent.As shown in Fig. 2 battle array provided in an embodiment of the present invention
The preparation method of row substrate includes：
Step 110, provide substrate.
Optionally, substrate can be rigid substrates or flexible base board, wherein, the material of rigid substrates can be glass, soft
The material of property substrate can be polyimides, and the thickness of substrate can be set according to process requirements and product requirement etc..
Step 120, with reference to figure 3a, form the first electrode being separated from each other in each sub-pixel unit on the substrate 100
101。
Optionally, reflecting electrode can be made based on top emission type display panel, the first electrode 101 of the present embodiment.First
Electrode 101 can be in block distribution, between each other insulation, so that each sub-pixel to be operated alone.
Step 130, with reference to figure 3b, pixel defining layer 102 is formed between first electrode 101.
Optionally, pixel defining layer 102 can be organic material, and the pixel defining layer 102 can limit opening for each sub-pixel
Mouth region (luminous zone).
Step 140, with reference to figure 3c, using the first mask plate in first electrode 101 and pixel defining layer 102 away from substrate
100 side forms the first functional layer 103.
Wherein, as shown in figure 4, the opening a of the first mask plate 1 covers whole pixel cells, the making of first mask plate 1
Cost is extremely low.
Step 150, with reference to figure 3d, using the second mask plate in first son of first functional layer 103 away from the side of substrate 100
The second functional layer 104 is formed in the sub-pixel unit 12 of pixel cell 11 and second.
Wherein, as shown in figure 5, at least same opening b or c of the second mask plate 2 at least covers two first adjacent sons
Pixel cell 11.Optionally, the 3rd sub-pixel unit 13, the second sub-pixel unit of the first kind pixel cell in the present embodiment
12 and first sub-pixel unit 11 arranged along line direction order, the first of sub-pixel unit 11, second of the second class pixel cell
The sub-pixel unit 13 of pixel cell 12 and the 3rd is arranged along line direction order, and now, with reference to figure 5, the second the same of mask plate 2 opens
Mouthful b or c covers two adjacent the first sub-pixel units 11, and adjacent with two adjacent the first sub-pixel units 11 the
Two sub-pixel units 12.The advantage of lower cost of second mask plate 2.
Step 160, with reference to figure 3e, using the 3rd mask plate in first son of first functional layer 103 away from the side of substrate 100
The 3rd functional layer 105 is formed in pixel cell 11.
Wherein, as shown in fig. 6, same the opening d or e of the 3rd mask plate 3 cover two adjacent the first sub-pixel units
11.Although the A/F of the 3rd mask plate 3 is narrower, the spacing between opening (such as between opening d and e) is larger, relative to
Existing accurate evaporation mask plate, the cost of manufacture of the 3rd mask plate 3 are relatively low.
Step 170, with reference to figure 3f and Fig. 7, the 4th functional layer for covering whole pixel cells is formed using the 4th mask plate 4
106。
In the present embodiment, the opening f of the 4th mask plate 4 and the opening of the first mask plate 1 are consistent, optionally, the first mask
The mask plate 4 of plate 1 and the 4th is same mask plate.
Step 180, with reference to figure 3g, form second electrode 107 in side of the 4th functional layer 106 away from substrate 100.
Thus, the micro-cavity structure of different cavity length corresponding to each sub-pixel unit can be formed, for example, with reference to figure 3g, the first electricity
Pole 101, the first functional layer 103, the second functional layer 104, the 3rd functional layer 105, the 4th functional layer 106 and the structure of second electrode 107
Into the micro-cavity structure of the first sub-pixel unit 11, a length of first functional layer 103 of chamber, the second functional layer 104, the 3rd functional layer 105
With the thickness sum of the 4th functional layer 106；First electrode 101, the first functional layer 103, the second functional layer 104, the 4th functional layer
106 and second electrode 107 form the second sub-pixel unit 12 micro-cavity structure, a length of first functional layer 103 of chamber, the second functional layer
104 and the 4th functional layer 106 thickness sum；First electrode 101, the first functional layer 103, the 4th functional layer 106 and the second electricity
Pole 107 forms the micro-cavity structure of the 3rd sub-pixel unit 13, the thickness of a length of functional layer 106 of first functional layer 103 and the 4th of chamber
Sum.And then the embodiment of the present invention can be grown by the chamber of each sub-pixel unit different-thickness, realize feux rouges, green glow and blue light
Strengthen simultaneously.
The preparation method of array base palte provided in an embodiment of the present invention, by by adjacent first kind pixel cell and second
First sub-pixel unit of class pixel cell is disposed adjacent, when forming functional layer in sub-pixel unit using mask plate, extremely
Few above-mentioned two adjacent sub-pixel units can form functional layer in the same opening of mask plate, and thus, the present invention is implemented
The outs open for the mask plate that example uses is larger, can reduce the technology difficulty for preparing mask plate, and then reduce process costs；Together
When, to form the micro-cavity structure of different cavity length in different subpixel unit, different functional layers uses different mask plate shapes
Into such as using the second mask plate in the first functional layer away from the first sub-pixel unit and the second sub-pixel unit of substrate side
The second functional layer is formed, forms in the first functional layer is away from the first sub-pixel unit of substrate side using the 3rd mask plate
Three functional layers, thus, the spacing between the opening for the mask plate that the embodiment of the present invention uses are bigger, can further reduce preparation
The technology difficulty of mask plate, reduce process costs.To sum up, compared with prior art, the embodiment of the present invention reduces accurate evaporation
The use of mask plate, the machining accuracy of accurate evaporation mask plate is reduced, reduces process costs.
Optionally, the first electrode of above-described embodiment is anode, and second electrode is negative electrode.Accordingly, the first functional layer is
Hole injection layer, the second functional layer and the 3rd functional layer are hole transmission layer, and the 4th functional layer includes white-light organic light-emitting layer.Separately
Outside, the embodiment of the present invention may also comprise electron transfer layer and electron injecting layer.
It should be noted that in the preparation method of above-mentioned array base palte, step 150 and step 160 can be shown without sequencing
Example property, step 150 can be first carried out, then perform step 160, i.e., the 3rd functional layer is formed at the second functional layer away from substrate side
Surface.
And then optionally, the first sub-pixel unit in the present embodiment can be red sub-pixel unit, the second sub-pixel list
Member can be green sub-pixels unit, and the 3rd sub-pixel unit can be blue subpixels unit, and the sub-pixel unit of same row is identical.
To improve the quality that each sub-pixel unit sends corresponding light, first functional layer, the second functional layer, the 3rd functional layer of the present embodiment
Meet following relation with the thickness of the 4th functional layer：
Wherein, L1 is the thickness of the first functional layer, and L2 is the thickness of the second functional layer, and L3 is the thickness of the 3rd functional layer,
L4 is the thickness of the 4th functional layer；λbFor blue light centre wavelength, λgFor green glow centre wavelength, λrFor feux rouges centre wavelength；θbFor indigo plant
Light is in first electrode and the reflection phase shift sum of second electrode surface, θgIt is green glow in the anti-of first electrode and second electrode surface
Penetrate phase shift sum, θrIt is feux rouges in first electrode and the reflection phase shift sum of second electrode surface；M is modulus；nbFor the first function
The mean refractive index of layer and the 4th functional layer, ngFor the refractive index of the second functional layer, nrFor the refractive index of the 3rd functional layer.Above-mentioned m
Value be 1 or 2.
In addition, the embodiment of the present invention can also first carry out step 160, then perform step 150.Exemplary, as illustrated in figure 3h,
The 3rd is formed in the first functional layer 103 is away from the first sub-pixel unit 11 of the side surface of substrate 100 1 using the 3rd mask plate
Functional layer 105；As shown in figure 3i, using the second mask plate in the first functional layer 103 away from the side surface of substrate 100 1, Yi Ji
Three functional layers 105 form second in the first sub-pixel unit 11 and the second sub-pixel unit 12 away from the side surface of substrate 100 1
Functional layer 104.
In addition, it is necessary to explanation, the embodiment of the present invention is not limited only to the pixel arrangement mode shown in Fig. 1, as long as along row
The adjacent first kind pixel cell of direction order arrangement and the first sub-pixel unit of the second class pixel cell are disposed adjacent i.e.
Can, thus when preparing array base palte, total cost of manufacture of the mask plate of use can be less than existing accurate evaporation mask plate
Cost of manufacture.
Optionally, as shown in figure 8, the second sub-pixel unit 12, the 3rd sub-pixel unit 13 of first kind pixel cell 10
Arranged with the first sub-pixel unit 11 along line direction order, first the 11, second son of sub-pixel unit of the second class pixel cell 20
The sub-pixel unit 13 of pixel cell 12 and the 3rd is arranged along line direction order, and now, with reference to figure 9, the second the same of mask plate 2 opens
Mouth h or j covers two adjacent the first sub-pixel units 11, and adjacent with the adjacent right side of two the first sub-pixel units 11
The second sub-pixel unit 12, opening g, i and k be covered each by second sub-pixel unit of row 12.The opening of second mask plate 2
Between be spaced a sub-pixel unit, and the h and j that is open covers three sub-pixel units simultaneously in the row direction, and cost of manufacture is relatively low.
Optionally, as shown in Figure 10, the second sub-pixel unit 12, the 3rd sub-pixel unit 13 of first kind pixel cell 10
Arranged with the first sub-pixel unit 11 along line direction order, of the first sub-pixel unit the 11, the 3rd of the second class pixel cell 20
The sub-pixel unit 12 of pixel cell 13 and second along line direction order arrange, now, with reference to figure 11, the second mask plate 2 it is same
The m or o that is open covers two adjacent the first sub-pixel units 11, and same opening l, n or the p covering of the second mask plate 2 are adjacent
Two the second sub-pixel units 12.A sub-pixel unit is spaced between second mask plate 2 opening, and be open l, m, n, o and p
Cover two sub-pixel units simultaneously in the row direction, cost of manufacture is relatively low.
The array base palte of above-mentioned different pixels arrangement can use the preparation method system of the array base palte of the present embodiment offer
Standby, here is omitted.
Optionally, the white-light organic light-emitting layer in the embodiment of the present invention may include blue light-emitting layer, the interval stacked gradually
Layer, red light emitting layer and green light emitting layer.Exemplary, the thickness of blue light-emitting layer is 6nm, including the tertiary fourths of material of main part 3-
Base -9,10- bis- (2- naphthalenes) anthracene (MAND), and guest materials 4,4'- [Isosorbide-5-Nitrae-phenylene two-(1E) -2,1- ethene diyl] two [N,
N- diphenyl aniline] (DSA-ph), the ratio of material of main part and guest materials is 5%；The thickness of wall is 5nm, including 4,
4', 4 "-three (carbazole -9- bases) triphenylamines (TCTA) and 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene (TPBI),
TCTA and TPBI ratios are 5:5；The thickness of red light emitting layer is 5nm, including material of main part TCTA and TPBI, and guest materials
(acetylacetone,2,4-pentanedione) double (2- methyldiphenyls simultaneously [F, H] quinoxaline) closes iridium ((MDQ) Ir (acac)2), TCTA, TPBI and (MDQ) Ir
(acac)2Ratio be 0.5:0.5：0.06；The thickness of green light emitting layer is 20nm, including material of main part TCTA and TPBI, with
And guest materials three (2- phenylpyridines) closes iridium (III) (Ir (ppy)3), TCTA, TPBI and Ir (ppy)3Ratio be 0.5:
0.5：0.15.Now, as shown in figure 12, the green glow (517nm it can be seen from the intrinsic luminescent spectrum figure of white-light organic light-emitting layer
Place) spectrum it is wider and luminous intensity is smaller, feux rouges (at 618nm), the luminous intensity of green glow and blue light (at 466nm) or brightness
It is uneven.
In the embodiment of the present invention, the material of anode can be tin indium oxide, and the material of negative electrode can be aluminium, the first functional layer
The thickness of (hole injection layer) is 100nm, six cyano group of material 2,3,6,7,10,11--Isosorbide-5-Nitrae, 5,8,9,12- six azepine benzos
Luxuriant and rich with fragrance (HAT-CN)；The thickness of second functional layer (hole transmission layer) is 15nm, material N, N'- dinaphthyl-N, N'- diphenyl-
4,4'- benzidines (NPB)；The thickness of 3rd functional layer (hole transmission layer) is 5nm, material TCTA；In addition, the 4th function
Layer may also include electron transfer layer, thickness 35nm, and material is that two (2- hydroxy phenyls pyridines) close beryllium (Bepp2)。
Thus, the luminescent spectrum figure of the pixel cell of the embodiment of the present invention refers to Figure 13, it can be observed from fig. 13 that through
Cross after the micro-cavity structure of the embodiment of the present invention, the half-peak breadth for the rgb light spectrum being finally emitted significantly reduces, luminous intensity or bright
Degree is big and uniform, and the pure degree of color is effectively lifted.
The embodiment of the present invention additionally provides a kind of array base palte, the array base that the array base palte provides according to above-described embodiment
Prepared by the preparation method of plate, with reference to figure 1 and Fig. 3 g, the array base palte includes：
Underlay substrate 100；
Multiple pixel cells, on underlay substrate 100, pixel cell is arranged in array along line direction and column direction, as
Plain unit includes the class pixel cell 20 of first kind pixel cell 10 and second being arranged alternately along line direction, first kind pixel cell
10 and second class pixel cell 20 include the first sub-pixel unit 11, the second sub-pixel unit 12 and the 3rd sub-pixel unit
13, along the first sub-pixel unit of the adjacent class pixel cell 20 of first kind pixel cell 10 and second of line direction order arrangement
11 are disposed adjacent；
Each sub-pixel unit includes the first electrode 101 that is separated from each other, formed with pixel defining layer between first electrode 101
102；
Each sub-pixel unit also include be formed at the side of first electrode 101 and pixel defining layer 102 away from substrate according to
The first functional layer 103, the 4th functional layer 106 and the second electrode 107 of secondary stacking；
First sub-pixel unit 11 also includes the second work(being formed between the first functional layer 103 and the 4th functional layer 106
The functional layer 105 of ergosphere 104 and the 3rd；
Second sub-pixel unit also includes the second function being formed between the first functional layer 103 and the 4th functional layer 106
Layer 104.
Optionally, with reference to figure 1, the 3rd sub-pixel unit 13, the and of the second sub-pixel unit 12 of first kind pixel cell 10
First sub-pixel unit 11 is arranged along line direction order, the first sub-pixel unit 11, the second sub- picture of the second class pixel cell 20
The plain sub-pixel unit 13 of unit 12 and the 3rd is arranged along line direction order.
In addition, it is necessary to explanation, the embodiment of the present invention is not limited only to the pixel arrangement mode shown in Fig. 1, as long as along row
The adjacent first kind pixel cell of direction order arrangement and the first sub-pixel unit of the second class pixel cell are disposed adjacent i.e.
Can.
Optionally, as shown in figure 8, the second sub-pixel unit 12, the 3rd sub-pixel unit 13 of first kind pixel cell 10
Arranged with the first sub-pixel unit 11 along line direction order, first the 11, second son of sub-pixel unit of the second class pixel cell 20
The sub-pixel unit 13 of pixel cell 12 and the 3rd is arranged along line direction order, accordingly, cross-section structure such as Figure 14 of array base palte
It is shown.
Optionally, as shown in Figure 10, the second sub-pixel unit 12, the 3rd sub-pixel unit 13 of first kind pixel cell 10
Arranged with the first sub-pixel unit 11 along line direction order, of the first sub-pixel unit the 11, the 3rd of the second class pixel cell 20
The sub-pixel unit 12 of pixel cell 13 and second is arranged along line direction order, accordingly, cross-section structure such as Figure 15 of array base palte
It is shown.
Optionally, first electrode is anode, and second electrode is negative electrode；
First functional layer is hole injection layer, and the second functional layer and the 3rd functional layer are hole transmission layer, the 4th functional layer
Including white-light organic light-emitting layer.
Optionally, the 3rd functional layer is formed at surface of second functional layer away from substrate side.
Optionally, the thickness of the first functional layer, the second functional layer, the 3rd functional layer and the 4th functional layer meets such as ShiShimonoseki
System：
Wherein, L1 is the thickness of the first functional layer, and L2 is the thickness of the second functional layer, and L3 is the thickness of the 3rd functional layer,
L4 is the thickness of the 4th functional layer；λbFor blue light centre wavelength, λgFor green glow centre wavelength, λrFor feux rouges centre wavelength；θbFor indigo plant
Light is in first electrode and the reflection phase shift sum of second electrode surface, θgIt is green glow in the anti-of first electrode and second electrode surface
Penetrate phase shift sum, θrIt is feux rouges in first electrode and the reflection phase shift sum of second electrode surface；M is modulus；nbFor the first function
The mean refractive index of layer and the 4th functional layer, ngFor the refractive index of the second functional layer, nrFor the refractive index of the 3rd functional layer.
Optionally, the 4th functional layer also includes the electron transfer layer between white-light organic light-emitting layer and negative electrode；
White-light organic light-emitting layer includes blue light-emitting layer, wall, red light emitting layer and the green light emitting layer stacked gradually.
Optionally, the first mask plate and the 4th mask plate are same mask plate.
Optionally, as shown in figure 1, the sub-pixel unit of same row is identical.
The array base palte embodiment of the present invention belongs to same inventive concept with embodiment of the method, possesses identical function and has
Beneficial effect, the content of detailed description not refer to embodiment of the method in array base palte embodiment, and here is omitted.
The embodiment of the present invention additionally provides a kind of display panel, including array base palte and envelope described in any of the above-described embodiment
Fill layer.
Wherein, encapsulated layer can be encapsulation cover plate or thin-film encapsulation layer.
The embodiment of the present invention additionally provides a kind of display device, including the display panel described in above-described embodiment.
Pay attention to, above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious changes,
Readjust and substitute without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
Other more equivalent embodiments can be included, and the scope of the present invention is determined by scope of the appended claims.
Claims (15)
1. a kind of preparation method of array base palte, the array base palte includes multiple being arranged in array along line direction and column direction
Pixel cell, the pixel cell include the first kind pixel cell and the second class pixel list being arranged alternately along the line direction
Member, the first kind pixel cell and the second class pixel cell include the first sub-pixel unit, the second sub-pixel unit
With the 3rd sub-pixel unit, the adjacent first kind pixel cell and the second class picture along line direction order arrangement
First sub-pixel unit of plain unit is disposed adjacent, it is characterised in that including：
Substrate is provided；
The first electrode being separated from each other is formed in each sub-pixel unit over the substrate；
Pixel defining layer is formed between the first electrode；
First work(is formed in the side of the first electrode and the pixel defining layer away from the substrate using the first mask plate
Ergosphere, wherein, the opening of first mask plate covers whole pixel cells；
Using the second mask plate in first sub-pixel unit of first functional layer away from the substrate side and described
The second functional layer is formed in second sub-pixel unit, wherein, at least same opening at least covers phase in second mask plate
Two adjacent the first sub-pixel units；
Formed using the 3rd mask plate in first functional layer is away from first sub-pixel unit of the substrate side
3rd functional layer, wherein, the same opening of the 3rd mask plate covers two adjacent the first sub-pixel units；
The 4th functional layer for covering whole pixel cells is formed using the 4th mask plate；
Second electrode is formed in side of the 4th functional layer away from the substrate.
2. the preparation method of array base palte according to claim 1, it is characterised in that the of the first kind pixel cell
Three sub-pixel units, the second sub-pixel unit and the first sub-pixel unit are arranged along line direction order, the second class picture
The first sub-pixel unit, the second sub-pixel unit and the 3rd sub-pixel unit of plain unit are arranged along line direction order, institute
The same opening for stating the second mask plate covers adjacent two the first sub-pixel units, and with the two first adjacent sons
The second adjacent sub-pixel unit of pixel cell.
3. the preparation method of array base palte according to claim 1 or 2, it is characterised in that the first electrode is anode,
The second electrode is negative electrode；
First functional layer is hole injection layer, and second functional layer and the 3rd functional layer are hole transmission layer, institute
Stating the 4th functional layer includes white-light organic light-emitting layer.
4. the preparation method of array base palte according to claim 3, it is characterised in that the 3rd functional layer is formed at institute
State surface of second functional layer away from the substrate side.
5. the preparation method of array base palte according to claim 4, it is characterised in that first functional layer, described
The thickness of two functional layers, the 3rd functional layer and the 4th functional layer meets following relation：
<mrow>
<mi>L</mi>
<mn>1</mn>
<mo>+</mo>
<mi>L</mi>
<mn>4</mn>
<mo>=</mo>
<mfrac>
<mrow>
<msub>
<mi>&lambda;</mi>
<mi>b</mi>
</msub>
<mrow>
<mo>(</mo>
<mfrac>
<mi>m</mi>
<mn>2</mn>
</mfrac>
<mo>-</mo>
<mfrac>
<msub>
<mi>&theta;</mi>
<mi>b</mi>
</msub>
<mrow>
<mn>4</mn>
<mi>&pi;</mi>
</mrow>
</mfrac>
<mo>)</mo>
</mrow>
</mrow>
<msub>
<mi>n</mi>
<mi>b</mi>
</msub>
</mfrac>
<mo>;</mo>
</mrow>
<mrow>
<mi>L</mi>
<mn>2</mn>
<mo>=</mo>
<mfrac>
<mrow>
<mfrac>
<mrow>
<msub>
<mi>m&lambda;</mi>
<mi>g</mi>
</msub>
</mrow>
<mn>2</mn>
</mfrac>
<mo>-</mo>
<mfrac>
<mrow>
<msub>
<mi>&lambda;</mi>
<mi>g</mi>
</msub>
<msub>
<mi>&theta;</mi>
<mi>g</mi>
</msub>
</mrow>
<mrow>
<mn>4</mn>
<mi>&pi;</mi>
</mrow>
</mfrac>
<mo>-</mo>
<msub>
<mi>n</mi>
<mi>b</mi>
</msub>
<mrow>
<mo>(</mo>
<mi>L</mi>
<mn>1</mn>
<mo>+</mo>
<mi>L</mi>
<mn>4</mn>
<mo>)</mo>
</mrow>
</mrow>
<msub>
<mi>n</mi>
<mi>g</mi>
</msub>
</mfrac>
<mo>;</mo>
</mrow>
1
<mrow>
<mi>L</mi>
<mn>3</mn>
<mo>=</mo>
<mfrac>
<mrow>
<mfrac>
<mrow>
<msub>
<mi>m&lambda;</mi>
<mi>r</mi>
</msub>
</mrow>
<mn>2</mn>
</mfrac>
<mo>-</mo>
<mfrac>
<mrow>
<msub>
<mi>&lambda;</mi>
<mi>r</mi>
</msub>
<msub>
<mi>&theta;</mi>
<mi>r</mi>
</msub>
</mrow>
<mrow>
<mn>4</mn>
<mi>&pi;</mi>
</mrow>
</mfrac>
<mo>-</mo>
<msub>
<mi>n</mi>
<mi>g</mi>
</msub>
<mi>L</mi>
<mn>2</mn>
<mo>-</mo>
<msub>
<mi>n</mi>
<mi>b</mi>
</msub>
<mrow>
<mo>(</mo>
<mi>L</mi>
<mn>1</mn>
<mo>+</mo>
<mi>L</mi>
<mn>4</mn>
<mo>)</mo>
</mrow>
</mrow>
<msub>
<mi>n</mi>
<mi>r</mi>
</msub>
</mfrac>
<mo>;</mo>
</mrow>
Wherein, L1 is the thickness of first functional layer, and L2 is the thickness of second functional layer, and L3 is the 3rd functional layer
Thickness, L4 be the 4th functional layer thickness；λbFor blue light centre wavelength, λgFor green glow centre wavelength, λrFor feux rouges center
Wavelength；θbIt is blue light in the first electrode and the reflection phase shift sum of the second electrode surface, θgIt is green glow described first
The reflection phase shift sum of electrode and the second electrode surface, θrIt is feux rouges in the first electrode and the second electrode surface
Reflection phase shift sum；M is modulus；nbFor first functional layer and the mean refractive index of the 4th functional layer, ngTo be described
The refractive index of second functional layer, nrFor the refractive index of the 3rd functional layer.
6. the array base palte prepared by a kind of preparation method of array base palte according to claim any one of 1-5, it is special
Sign is, including：
Underlay substrate；
Multiple pixel cells, on the underlay substrate, the pixel cell is arranged in array along line direction and column direction, institute
State first kind pixel cell and the second class pixel cell that pixel cell includes being arranged alternately along the line direction, the first kind
Pixel cell and the second class pixel cell include the first sub-pixel unit, the second sub-pixel unit and the 3rd sub-pixel list
Member, along the adjacent first kind pixel cell of line direction order arrangement and the first son of the second class pixel cell
Pixel cell is disposed adjacent；
Each sub-pixel unit includes the first electrode that is separated from each other, formed with pixel defining layer between the first electrode；
Each sub-pixel unit also includes being formed at the side of the first electrode and the pixel defining layer away from the substrate
The first functional layer, the 4th functional layer and the second electrode stacked gradually；
First sub-pixel unit also includes the second work(being formed between first functional layer and the 4th functional layer
Ergosphere and the 3rd functional layer；
Second sub-pixel unit also includes described the be formed between first functional layer and the 4th functional layer
Two functional layers.
7. array base palte according to claim 6, it is characterised in that the 3rd sub-pixel list of the first kind pixel cell
Member, the second sub-pixel unit and the first sub-pixel unit are arranged along line direction order, and the of the second class pixel cell
One sub-pixel unit, the second sub-pixel unit and the 3rd sub-pixel unit are arranged along line direction order.
8. the array base palte according to claim 6 or 7, it is characterised in that the first electrode is anode, second electricity
Extremely negative electrode；
First functional layer is hole injection layer, and second functional layer and the 3rd functional layer are hole transmission layer, institute
Stating the 4th functional layer includes white-light organic light-emitting layer.
9. array base palte according to claim 8, it is characterised in that the 3rd functional layer is formed at second function
Surface of the layer away from the substrate side.
10. array base palte according to claim 9, it is characterised in that first functional layer, second functional layer,
The thickness of 3rd functional layer and the 4th functional layer meets following relation：
<mrow>
<mi>L</mi>
<mn>1</mn>
<mo>+</mo>
<mi>L</mi>
<mn>4</mn>
<mo>=</mo>
<mfrac>
<mrow>
<msub>
<mi>&lambda;</mi>
<mi>b</mi>
</msub>
<mrow>
<mo>(</mo>
<mfrac>
<mi>m</mi>
<mn>2</mn>
</mfrac>
<mo>-</mo>
<mfrac>
<msub>
<mi>&theta;</mi>
<mi>b</mi>
</msub>
<mrow>
<mn>4</mn>
<mi>&pi;</mi>
</mrow>
</mfrac>
<mo>)</mo>
</mrow>
</mrow>
<msub>
<mi>n</mi>
<mi>b</mi>
</msub>
</mfrac>
<mo>;</mo>
</mrow>
2
<mrow>
<mi>L</mi>
<mn>2</mn>
<mo>=</mo>
<mfrac>
<mrow>
<mfrac>
<mrow>
<msub>
<mi>m&lambda;</mi>
<mi>g</mi>
</msub>
</mrow>
<mn>2</mn>
</mfrac>
<mo>-</mo>
<mfrac>
<mrow>
<msub>
<mi>&lambda;</mi>
<mi>g</mi>
</msub>
<msub>
<mi>&theta;</mi>
<mi>g</mi>
</msub>
</mrow>
<mrow>
<mn>4</mn>
<mi>&pi;</mi>
</mrow>
</mfrac>
<mo>-</mo>
<msub>
<mi>n</mi>
<mi>b</mi>
</msub>
<mrow>
<mo>(</mo>
<mi>L</mi>
<mn>1</mn>
<mo>+</mo>
<mi>L</mi>
<mn>4</mn>
<mo>)</mo>
</mrow>
</mrow>
<msub>
<mi>n</mi>
<mi>g</mi>
</msub>
</mfrac>
<mo>;</mo>
</mrow>
<mrow>
<mi>L</mi>
<mn>3</mn>
<mo>=</mo>
<mfrac>
<mrow>
<mfrac>
<mrow>
<msub>
<mi>m&lambda;</mi>
<mi>r</mi>
</msub>
</mrow>
<mn>2</mn>
</mfrac>
<mo>-</mo>
<mfrac>
<mrow>
<msub>
<mi>&lambda;</mi>
<mi>r</mi>
</msub>
<msub>
<mi>&theta;</mi>
<mi>r</mi>
</msub>
</mrow>
<mrow>
<mn>4</mn>
<mi>&pi;</mi>
</mrow>
</mfrac>
<mo>-</mo>
<msub>
<mi>n</mi>
<mi>g</mi>
</msub>
<mi>L</mi>
<mn>2</mn>
<mo>-</mo>
<msub>
<mi>n</mi>
<mi>b</mi>
</msub>
<mrow>
<mo>(</mo>
<mi>L</mi>
<mn>1</mn>
<mo>+</mo>
<mi>L</mi>
<mn>4</mn>
<mo>)</mo>
</mrow>
</mrow>
<msub>
<mi>n</mi>
<mi>r</mi>
</msub>
</mfrac>
<mo>;</mo>
</mrow>
Wherein, L1 is the thickness of first functional layer, and L2 is the thickness of second functional layer, and L3 is the 3rd functional layer
Thickness, L4 be the 4th functional layer thickness；λbFor blue light centre wavelength, λgFor green glow centre wavelength, λrFor feux rouges center
Wavelength；θbIt is blue light in the first electrode and the reflection phase shift sum of the second electrode surface, θgIt is green glow described first
The reflection phase shift sum of electrode and the second electrode surface, θrIt is feux rouges in the first electrode and the second electrode surface
Reflection phase shift sum；M is modulus；nbFor first functional layer and the mean refractive index of the 4th functional layer, ngTo be described
The refractive index of second functional layer, nrFor the refractive index of the 3rd functional layer.
11. array base palte according to claim 8, it is characterised in that the 4th functional layer is also included positioned at described white
Electron transfer layer between light organic luminous layer and the negative electrode；
The white-light organic light-emitting layer includes blue light-emitting layer, wall, red light emitting layer and the green light emitting layer stacked gradually.
12. array base palte according to claim 6, it is characterised in that first mask plate and the 4th mask plate
For same mask plate.
13. array base palte according to claim 6, it is characterised in that the sub-pixel unit of same row is identical.
14. a kind of display panel, it is characterised in that including the array base palte as described in claim any one of 6-13 and encapsulation
Layer.
15. a kind of display device, it is characterised in that including display panel as claimed in claim 14.
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| CN112510073A (en) * | 2020-12-15 | 2021-03-16 | 云谷（固安）科技有限公司 | Display panel and display device |
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