CN107359198A - Novel anode short circuit type IGBT and preparation method thereof - Google Patents
Novel anode short circuit type IGBT and preparation method thereof Download PDFInfo
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- CN107359198A CN107359198A CN201710690341.XA CN201710690341A CN107359198A CN 107359198 A CN107359198 A CN 107359198A CN 201710690341 A CN201710690341 A CN 201710690341A CN 107359198 A CN107359198 A CN 107359198A
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- metallic aluminum
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000007797 corrosion Effects 0.000 claims abstract description 8
- 238000005260 corrosion Methods 0.000 claims abstract description 8
- 238000001465 metallisation Methods 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- 238000002955 isolation Methods 0.000 claims abstract description 3
- 150000002500 ions Chemical class 0.000 claims description 43
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 239000003292 glue Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000047 product Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/6634—Vertical insulated gate bipolar transistors with a recess formed by etching in the source/emitter contact region
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention discloses a kind of Novel anode short circuit type IGBT and preparation method thereof, Novel anode short circuit type IGBT, including is arranged at wafer body；The back side of the wafer is provided with ion implanted layer；Ion implanted layer is provided with metallic aluminum, and metallic aluminum is sheet and is photo-etched screen layer that several intervals are formed after corrosion；Two neighboring screen layer is arranged at intervals and by trench isolations；The back side of wafer is provided with metal layer on back, and metal layer on back is covered in above the groove being spaced between the screen layer being made up of metallic aluminum and two screen layers；Methods described includes：（1）The making of wafer frontside；（2）Wafer rear ion implanting forms ion implanted layer；（3）Wafer rear evaporates to form metallic aluminum；（4）Metallic aluminum photoetching corrosion forms several grooves；（5）Second of ion implanting of wafer rear；（6）Back face metalization forms metal layer on back.
Description
Technical field
The present invention relates to power semiconductor technologies field, more particularly to a kind of Novel anode short circuit type IGBT and its making side
Method.
Background technology
For IGBT, existing IGBT generally has three kinds of structures as described in Figure 1, i.e. punch IGBT, non-break-through
Type IGBT and field resistance type IGBT；For punch IGBT, it has low switching loss, low conduction loss, but uncomfortable
In used in parallel；For non-punch through IGBT, it has medium switching loss, medium conduction loss, is easy to simultaneously
The advantages of connection, and for the resistance type IGBT of field, it has low switching loss, low conduction loss, is easy to the advantages of parallel connection.
From the foregoing, it will be observed that the advantages of field resistance type IGBT, is superior to punch IGBT, non-punch through IGBT, therefore its use range
Extensively, and current development trend and direction, but in addition to above-mentioned three kinds of structures, have also appeared on the basis of resistance type IGBT on the scene
One new concept-anode in short circuit IGBT (SAIGBT)：It allows body diode being embedded into IGBT in a manner of MOSFET
In.Fig. 2 shows the basic structure of field cut-off raceway groove anode in short circuit (FSTSA) IGBT concepts, wherein, " n+ " colelctor electrode is cut with field
Only layer is adjacent, as the negative electrode of PN diodes, and common collector of " p+ " collector layer as FSTIGBT.
At present, this anode in short circuit type IGBT technological process is as follows：（1）Wafer frontside IGBT processing procedures；（3）The big face in the back side
Product phosphorus（Or boron）Ion implanting；（4）Photoetching（Retain photoresist after development at the back side of wafer）；（5）Back side band glue boron（Or
Person's phosphorus）Ion implanting；（6）Remove photoresist；（7）Back face metalization, alloy/annealing.
Above-mentioned technological process is that most manufacturers' preparation IGBT are used always at present, but it is using above-mentioned work
There is one during skill flow not yet solve always, perplex technical staff and unavoidable subject matter：In band glue ion implanting
When, it causes photoresist is very difficult to clean out, and after particularly heavy dose of ion implanting, easily causes successive process to be difficult to control
System, in turn results in scrapping for low yield or wafer, thereby produces reduction, unstable, the production effect of performance of product quality
The low a series of problem of rate.
The content of the invention
It is an object of the invention to overcome the deficiencies in the prior art, adapts to real needs, discloses a kind of Novel anode short circuit
Type IGBT and preparation method thereof.
In order to realize the purpose of the present invention, the technical solution adopted in the present invention is：
The present invention a kind of Novel anode short circuit type IGBT is disclosed, including be arranged at wafer body, the emitter stage positioned at wafer frontside,
Colelctor electrode and grid；
The back side of the wafer is provided with ion implanted layer；
Ion implanted layer is provided with metallic aluminum, and metallic aluminum is sheet and is photo-etched shielding that several intervals are formed after corrosion
Layer；Two neighboring screen layer is arranged at intervals and by trench isolations；
The back side of wafer is provided with metal layer on back, and metal layer on back is covered in the screen layer being made up of metallic aluminum and two shieldings
Above the groove being spaced between layer.
The amount of ions in ion implanted layer between adjacent two screen layer in interval region, which is more than, is located at screen layer
Amount of ions in the ion implanted layer of lower section.
The invention also discloses a kind of preparation method for manufacturing anode in short circuit type IGBT as described above, it includes following step
Suddenly：
（1）The making of wafer frontside；
Characterized in that, it also includes：
（2）Wafer rear ion implanting forms ion implanted layer；
（3）Wafer rear evaporates to form metallic aluminum；
（4）Metallic aluminum photoetching corrosion forms several grooves；
（5）Second of ion implanting of wafer rear；
（6）Back face metalization forms metal layer on back.
Step（2）The thickness of wafer rear is thinned before.
Step（2）Uniform ion should be injected into during ion implanting in wafer rear.
Step（4）In, groove connection ion implanted layer.
The beneficial effects of the present invention are：
The present invention changes existing traditional technological process, and above-mentioned ask can be solved by the make saving the process with glue ion implanting
Topic, is greatly improved using the yield rate of its yield after the present invention, meanwhile, the quality of product is protected.
Brief description of the drawings
Fig. 1 is tri- kinds of structural representations of IGBT of the prior art；
Fig. 2 is anode in short circuit IGBT structure schematic diagram of the prior art；
Fig. 3 is the step in invention（1）Corresponding schematic diagram；
Fig. 4 is the step in invention（2）Corresponding schematic diagram；
Fig. 5 is the step in invention（2）Corresponding schematic diagram；
Fig. 6 is the step in invention（3）Corresponding schematic diagram；
Fig. 7 is the step in invention（4）Corresponding schematic diagram；
Fig. 8 is the step in invention（5）Corresponding schematic diagram；
Fig. 9 is Novel anode short circuit type IGBT and step in invention（6）Corresponding schematic diagram；
In figure：
1. wafer;2. ion implanted layer;3. metallic aluminum;4. metal layer on back;5. groove.
Embodiment
The present invention is further described with reference to the accompanying drawings and examples：
Embodiment 1：A kind of Novel anode short circuit type IGBT, referring to Fig. 9；Wafer body is arranged at including it, positioned at the front of wafer 1
Emitter stage, colelctor electrode and grid；The back side of the wafer is provided with ion implanted layer；（It is above prior art, the present embodiment is not
Excessive repeat is done to it again）.
In the design, ion implanted layer 2 is provided with metallic aluminum 3, and metallic aluminum 3 is sheet and formed after being photo-etched corrosion
The screen layer at several intervals（Screen layer equivalent metal aluminium lamination, in Fig. 9 shown in mark 3）；Two neighboring screen layer 3 is arranged at intervals
And isolated by groove 5.
Further, the back side of the wafer 1 in the design is provided with metal layer on back 4, and metal layer on back 4 is covered in by metal
The top of groove 5 being spaced between screen layer and two screen layers that aluminium lamination is formed.
Further, in the design, the ion implanted layer between adjacent two screen layer 3 in interval region（Groove 5 is just
The ion implanted layer of lower section）In amount of ions be more than amount of ions in the ion implanted layer immediately below the screen layer.
Embodiment 2, a kind of preparation method for manufacturing anode in short circuit type IGBT as described in Example 1, it includes following step
Suddenly：
（1）The making of wafer frontside（Prior art, the present embodiment no longer do excessive repeat to it）, shown in Fig. 3；
（2）The thickness of wafer rear is thinned, wafer rear ion implanting forms the ion implanted layer, Fig. 4, shown in 5；
（3）Wafer rear evaporates to form metallic aluminum, shown in Fig. 6；
（4）Metallic aluminum photoetching corrosion forms several grooves, groove connection ion implanted layer, shown in Fig. 7；
（5）Second of ion implanting of wafer rear, shown in Fig. 8；
（6）Back face metalization forms metal layer on back, shown in Fig. 9.
The Novel anode short circuit type IGBT described in embodiment 1 can be so completed according to above-mentioned steps.
By Novel anode short circuit type IGBT described in above-described embodiment 1 and embodiment 2 and preparation method thereof, in force
When can solve to perplex technical staff always with glue ion implanting, it causes photoresist is very difficult to clean out, particularly heavy dose
After ion implanting, easily cause successive process to be difficult to control, in turn result in the technical problem scrapped of low yield or wafer, adopt
With Novel anode short circuit type IGBT described in embodiment 1 and embodiment 2 and preparation method thereof, yield rate when its in implementation makes
It is greatly improved, meanwhile, the quality of product is protected, and has huge application prospect.
What embodiments of the invention were announced is preferred embodiment, but is not limited thereto, the ordinary skill people of this area
Member, easily according to above-described embodiment, understand the spirit of the present invention, and make different amplification and change, but as long as not departing from this
The spirit of invention, all within the scope of the present invention.
Claims (6)
1. a kind of Novel anode short circuit type IGBT, including be arranged at wafer body, the emitter stage positioned at wafer frontside, colelctor electrode and
Grid；It is characterized in that：The back side of the wafer is provided with ion implanted layer；
Ion implanted layer is provided with metallic aluminum, and metallic aluminum is sheet and is photo-etched shielding that several intervals are formed after corrosion
Layer；Two neighboring screen layer is arranged at intervals and by trench isolations；
The back side of wafer is provided with metal layer on back, and metal layer on back is covered in the screen layer being made up of metallic aluminum and two shieldings
Above the groove being spaced between layer.
2. Novel anode short circuit type IGBT as claimed in claim 1, it is characterised in that：It is spaced between adjacent two screen layer
The amount of ions in ion implanted layer in region is more than the amount of ions in the ion implanted layer below screen layer.
3. a kind of preparation method for manufacturing the anode in short circuit type IGBT as described in claim 1/2, it comprises the following steps：
(1) making of wafer frontside；
Characterized in that, it also includes：
(2) wafer rear ion implanting forms ion implanted layer；
(3) wafer rear evaporates to form metallic aluminum；
(4) metallic aluminum photoetching corrosion forms several grooves；
(5) second of ion implanting of wafer rear；
(6) back face metalization forms metal layer on back.
4. method as claimed in claim 3, it is characterised in that：The thickness of wafer rear is thinned before step (2).
5. method as claimed in claim 3, it is characterised in that：Uniform ion should be injected into crystalline substance during step (2) ion implanting
In the circle back side.
6. method as claimed in claim 3, it is characterised in that：In step (4), groove connection ion implanted layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710690341.XA CN107359198A (en) | 2017-08-14 | 2017-08-14 | Novel anode short circuit type IGBT and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710690341.XA CN107359198A (en) | 2017-08-14 | 2017-08-14 | Novel anode short circuit type IGBT and preparation method thereof |
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| Publication Number | Publication Date |
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| CN107359198A true CN107359198A (en) | 2017-11-17 |
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| CN201710690341.XA Pending CN107359198A (en) | 2017-08-14 | 2017-08-14 | Novel anode short circuit type IGBT and preparation method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903633A (en) * | 2011-07-27 | 2013-01-30 | 万国半导体股份有限公司 | Methods for fabricating anode shorted field stop insulated gate bipolar transistor |
| CN104425258A (en) * | 2013-08-30 | 2015-03-18 | 无锡华润上华半导体有限公司 | Manufacturing method for reverse conducting FS IGBT (field stop insulated gate bipolar transistor) |
| US20150279980A1 (en) * | 2014-03-31 | 2015-10-01 | Pfc Device Holdings Limited | High-performance reverse-conduction field-stop (rcfs) insulated gate bipolar transistor and method for manufacturing the same |
| CN207217543U (en) * | 2017-08-14 | 2018-04-10 | 深圳市芯电元科技有限公司 | Novel anode short circuit type IGBT |
-
2017
- 2017-08-14 CN CN201710690341.XA patent/CN107359198A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903633A (en) * | 2011-07-27 | 2013-01-30 | 万国半导体股份有限公司 | Methods for fabricating anode shorted field stop insulated gate bipolar transistor |
| CN104425258A (en) * | 2013-08-30 | 2015-03-18 | 无锡华润上华半导体有限公司 | Manufacturing method for reverse conducting FS IGBT (field stop insulated gate bipolar transistor) |
| US20150279980A1 (en) * | 2014-03-31 | 2015-10-01 | Pfc Device Holdings Limited | High-performance reverse-conduction field-stop (rcfs) insulated gate bipolar transistor and method for manufacturing the same |
| CN207217543U (en) * | 2017-08-14 | 2018-04-10 | 深圳市芯电元科技有限公司 | Novel anode short circuit type IGBT |
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