CN107356341A - Semiconductor thermoelectric module infrared detector and manufacture method - Google Patents
Semiconductor thermoelectric module infrared detector and manufacture method Download PDFInfo
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- CN107356341A CN107356341A CN201710144113.2A CN201710144113A CN107356341A CN 107356341 A CN107356341 A CN 107356341A CN 201710144113 A CN201710144113 A CN 201710144113A CN 107356341 A CN107356341 A CN 107356341A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000007787 solid Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J5/14—Electrical features thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J2005/103—Absorbing heated plate or film and temperature detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J2005/106—Arrays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J2005/123—Thermoelectric array
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention discloses a kind of semiconductor thermoelectric module infrared detector and manufacture method, including monocrystalline substrate, perpendicular to monocrystalline substrate lower surface and the thermocouple of several upward vertically extending columns, the thermocouple includes the first solid post being made up of the first material and the second solid post being made up of the second material, first solid post and the second solid post extend in parallel, interval is provided between first solid post and the second solid post, the 3rd dielectric layer is equipped with the outside of the first solid post and the second solid post；First solid post of each thermocouple and the top of the second solid post are electrically connected by stretching out the first metal layer of monocrystalline substrate upper surface, between each the first metal layer and first medium layer is equipped with each the first metal layer, first medium layer is provided with infrared absorbing film.The present invention has the characteristics of easily fabricated, good reliability.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly, to a kind of easy to manufacture, the high semiconductor thermoelectric of reliability
Heap infrared detector and manufacture method.
Background technology
Thermopile IR detector is widely used in various infra-red detection fields, and thermopile IR detector generally comprises
Infrared absorbing film and thermoelectric pile.Thermoelectric pile is generally made up of multiple thermocouples being cascaded.Each thermocouple is by two kinds
Different strip material compositions, two kinds of strip materials are electrically connected and contacted with infrared absorbing film at one end, referred to as hot junction, and two
The other end of kind strip material does not contact with infrared absorbing film, referred to as cold junction.Multiple thermocouple series connection refer to cold joint
Electrically connected two-by-two between the different materials of neighboring thermocouple at point.Produced after infrared absorbing film absorbs extraneous incident infrared ray
Heat amount, makes the temperature of thermojunction increase slightly, when temperature difference between hot junction and cold junction be present, due to Seebeck
(Seebeck) effect can produce slight voltage difference, can accumulate slight voltage difference to one by multiple thermocouples of connecting
The size that can be detected by peripheral circuit, so as to realize the detection to extraneous incident infrared ray.
Thermopile IR detector chip based on semiconductor technology manufacture generally comprises monocrystalline substrate, the sky in substrate
Cavity configuration, and the film thermocouple upwardly extended in the side parallel to substrate surface.Thermocouple cold junction is located at monocrystalline silicon lining
On bottom, hot junction and infrared absorbing film are then suspended on cavity., can using the film and showing methods technology of semiconductor
Easily to manufacture infrared absorbing film, such as silicon nitride film, NI-G metal film, or multilayer film with composite construction etc.；
Thermocouple can be easily manufactured, such as N-type and p type single crystal silicon, N-type and p-type polysilicon, monocrystalline silicon and metal, polysilicon and gold
Category etc..But on the whole, prior art has thermocouple and extended parallel to substrate surface, hot junction and part thermocouple film need
It is suspended on the substrate or cavity of hollow out, structural strength is relatively low to be not easy largely to manufacture, and is needed between hot junction and cold junction
Larger distance is wanted, chip area is competed with infrared absorbing film, chip size difficult the problem of reducing.Therefore device is further improved
Part structure and manufacture method are significant.
The content of the invention
The goal of the invention of the present invention is the hot junction in order to overcome thermocouple of the prior art to extend parallel to substrate surface
Needing to be suspended on the substrate or cavity of hollow out with part thermocouple film, structural strength is relatively low to be not easy largely to manufacture, and
Larger distance is needed between hot junction and cold junction, competes chip area with infrared absorbing film, chip size is difficult to be reduced not
Foot, there is provided a kind of easy to manufacture, the high semiconductor thermoelectric module infrared detector of reliability and manufacture method.
To achieve these goals, the present invention uses following technical scheme：
A kind of semiconductor thermoelectric module infrared detector, including monocrystalline substrate, originate in monocrystalline substrate lower surface and wear
The thermocouple for several columns that monocrystalline substrate upwardly extends is crossed, the thermocouple includes the first reality being made up of the first material
Stem and the second solid post being made up of the second material, the first solid post and the second solid post extend in parallel, the first solid post and
Interval is provided between second solid post, the 3rd dielectric layer is equipped with the outside of the first solid post and the second solid post；Each thermocouple
The first solid post and the top of the second solid post electrically connected by the first metal layer, it is between each the first metal layer and each
Be equipped with first medium layer on the first metal layer, first medium layer is provided with infrared absorbing film, the first metal layer and
Forming cavity between first medium layer lower surface and substrate top surface, monocrystalline substrate lower surface is provided with second dielectric layer, and second
Dielectric layer lower surface is provided with second metal layer, second medium corresponding with the first solid post of neighboring thermocouple and the second solid post
First through hole and the second through hole are respectively equipped with layer, second metal layer is electrically connected by first through hole with the first solid post lower end,
Second metal layer is electrically connected by the second through hole with the second solid post lower end.
The thermocouple of present invention composition thermoelectric pile is in the form of a column perpendicular to the extension of the direction on monocrystalline substrate surface, hot junction
Higher than monocrystalline substrate upper surface, cold junction is located at monocrystalline substrate lower surface, and infrared absorbing film is located at hot junction top.With
Compared to having better performance, stronger structure, chip size is easy to reduce prior art, and is possible to array realization figure
As detection.
Preferably, first material is p-type polysilicon, the second material is N-type polycrystalline silicon.
A kind of manufacture method of semiconductor thermoelectric module infrared detector, comprises the following steps：
(1) groove is formed on a monocrystaline silicon substrate；
(2) the 3rd dielectric layer is formed in trenched side-wall；
(3) polysilicon is filled in groove, and polysilicon is doped, adjacent groove difference doped p-type and N-type,
Respectively constitute the first solid post and the second solid post of thermocouple；
(4) the first metal layer is formed on the first solid post of each thermocouple and the top of the second solid post, forms thermocouple
Hot junction；
(5) between each the first metal layer and each the first metal layer is respectively formed on first medium layer；
(6) infrared absorbing film is formed in first medium layer top surface；
(7) perforate around each thermocouple, remove the silicon on monocrystalline substrate top, form cavity；
(8) monocrystalline substrate is thinned, the bottom of the first solid post and the second solid post is exposed in monocrystalline substrate bottom surface,
Form the cold junction of thermocouple；
(9) second dielectric layer is formed in monocrystalline substrate bottom surface；
(10) formed in second dielectric layer and expose the first through hole of the first solid post section bottom, and expose the
Second through hole of two solid post section bottoms；
(11) second metal layer is formed in second dielectric layer lower surface, second metal layer passes through first through hole and the second through hole
The first solid post and the second solid post of adjacent galvanic couple are connected, forms thermocouple thermoelectric pile in series.
The process window of the present invention is easily controllable, can realize that high-volume manufactures.
Compared with prior art, the present invention has the advantages that：
(1) infrared absorbing film does not compete chip area with thermocouple, and device performance and chip size can optimize simultaneously.
(2) the column thermocouple intensity of periodic arrangement is high, and manufacturing process is hardly damaged.
(3) hanging infrared absorption membrane is supported by the column thermocouple of periodic arrangement, and sound construction, manufacturing process is not easy
Damage.
(4) also smaller to the performance impact of device even if partial destruction occurs in hanging infrared absorption membrane, device can
It is higher by property.
Brief description of the drawings
Fig. 1 is a kind of profile of the present invention；
Fig. 2 is a kind of thermocouple cross-sectional view of the present invention；
Fig. 3 is schematic diagram of being connected at a kind of thermocouple cold junction of the present invention；
Fig. 4~Fig. 6 is a kind of manufacture method step schematic diagram of the present invention.
In figure：Monocrystalline substrate 1, thermocouple 2, the first solid post 3, the second solid post 4, the first metal layer 5, first medium
Layer 6, cavity 7, infrared absorbing film 8, second dielectric layer 9, first through hole 10, the second through hole 11, second metal layer the 12, the 3rd are situated between
Matter layer 13, groove 14.
Embodiment
The present invention will be further described with reference to the accompanying drawings and detailed description.
Embodiment as shown in Figure 1, Figure 2, Figure 3 shows is a kind of semiconductor thermoelectric module infrared detector, including monocrystalline substrate
1, originate in the thermocouple 2 of monocrystalline substrate lower surface and two columns upwardly extended through monocrystalline substrate, thermocouple
Including the first solid post 3 being made up of the first material and the second solid post 4 being made up of the second material, the first solid post and second
Solid post is extended in parallel, and interval, the first solid post and the second solid post outside are provided between the first solid post and the second solid post
It is equipped with the 3rd dielectric layer 13；Each first solid post of thermocouple and the top of the second solid post pass through the first metal layer 5
Electrically connect, be equipped with first medium layer 6 between each the first metal layer and on each the first metal layer, set on first medium layer
There is infrared absorbing film 8, cavity 7, monocrystalline silicon are formed between the first metal layer and first medium layer lower surface and substrate top surface
Substrate lower surface is provided with second dielectric layer 9, and second dielectric layer lower surface is provided with second metal layer 12, and first with neighboring thermocouple
The through hole 11 of first through hole 10 and second, second metal layer are respectively equipped with corresponding to solid post and the second solid post in second dielectric layer
Electrically connected by first through hole with the first solid post lower end, second metal layer is electrically connected by the second through hole and the second solid post lower end
Connect.
First material is p-type polysilicon, and the second material is N-type polycrystalline silicon.
A kind of manufacture method of semiconductor thermoelectric module infrared detector, comprises the following steps：
As shown in figure 4, (1) forms groove 14 on a monocrystaline silicon substrate；
As shown in figure 5, (2) form the 3rd dielectric layer 13 in trenched side-wall；
(3) polysilicon is filled in groove, and polysilicon is doped, adjacent groove difference doped p-type and N-type,
Respectively constitute the first solid post 3 and the second solid post 4 of thermocouple；
(4) the first metal layer 5 is formed on the first solid post of each thermocouple and the top of the second solid post, forms thermocouple
Hot junction；
As shown in fig. 6, (5) are between each the first metal layer and each the first metal layer is respectively formed on first medium layer
6；
(6) infrared absorbing film 8 is formed in first medium layer top surface；
(7) perforate around each thermocouple, remove the silicon on monocrystalline substrate top, form cavity 7；
As shown in figure 1, monocrystalline substrate is thinned in (8), the first solid post and second is exposed in monocrystalline substrate bottom surface in fact
The bottom of stem, form the cold junction of thermocouple；
(9) second dielectric layer 9 is formed in monocrystalline substrate bottom surface；
(10) first through hole 10 for exposing the first solid post section bottom is formed in second dielectric layer, and is exposed
Second through hole 11 of the second solid post section bottom；
(11) second metal layer 12 is formed in second dielectric layer lower surface, second metal layer is logical by first through hole and second
Hole connects the first solid post and the second solid post of adjacent galvanic couple, forms thermocouple thermoelectric pile in series.
It should be understood that the present embodiment is only illustrative of the invention and is not intended to limit the scope of the invention.In addition, it is to be understood that
After having read the content of the invention lectured, those skilled in the art can make various changes or modifications to the present invention, these etc.
Valency form equally falls within the application appended claims limited range.
Claims (3)
1. a kind of semiconductor thermoelectric module infrared detector, it is characterized in that, including monocrystalline substrate (1), originate in monocrystalline substrate
Lower surface and the thermocouple (2) of several columns upwardly extended through monocrystalline substrate, the thermocouple are included by the first material
Expect the first solid post (3) formed and the second solid post (4) being made up of the second material, the first solid post and the second solid post are put down
Row extension, interval is provided between the first solid post and the second solid post, the is equipped with the outside of the first solid post and the second solid post
Three dielectric layers (13)；Each first solid post of thermocouple and the top of the second solid post are electrically connected by the first metal layer (5)
Connect, between each the first metal layer and be equipped with first medium layer (6) on each the first metal layer, first medium layer is provided with
Infrared absorbing film (8), cavity (7) is formed between the first metal layer and first medium the layer lower surface and substrate top surface,
Monocrystalline substrate lower surface is provided with second dielectric layer (9), and second dielectric layer lower surface is provided with second metal layer (12), with adjacent heat
Corresponding to the first solid post and the second solid post of galvanic couple first through hole (10) and the second through hole are respectively equipped with second dielectric layer
(11), second metal layer is electrically connected by first through hole with the first solid post lower end, and second metal layer passes through the second through hole and
Two solid post lower ends electrically connect.
2. semiconductor thermoelectric module infrared detector according to claim 1, it is characterized in that, the first material is p-type polysilicon,
Second material is N-type polycrystalline silicon.
3. a kind of manufacture method of semiconductor thermoelectric module infrared detector, it is characterized in that, comprise the following steps：
(1) groove is formed on a monocrystaline silicon substrate；
(2) the 3rd dielectric layer is formed in trenched side-wall；
(3) polysilicon is filled in groove, and polysilicon is doped, adjacent groove difference doped p-type and N-type, respectively
Form the first solid post and the second solid post of thermocouple；
(4) the first metal layer is formed on the first solid post of each thermocouple and the top of the second solid post, forms the heat of thermocouple
Contact；
(5) between each the first metal layer and each the first metal layer is respectively formed on first medium layer；
(6) infrared absorbing film is formed in first medium layer top surface；
(7) perforate around each thermocouple, remove the silicon on monocrystalline substrate top, form cavity；
(8) monocrystalline substrate is thinned, the bottom of the first solid post and the second solid post is exposed in monocrystalline substrate bottom surface, forms
The cold junction of thermocouple；
(9) second dielectric layer is formed in monocrystalline substrate bottom surface；
(10) first through hole for exposing the first solid post section bottom is formed in second dielectric layer, and exposes second in fact
Second through hole of stem portion bottom；
(11) second metal layer is formed in second dielectric layer lower surface, second metal layer is connected by first through hole with the second through hole
The first solid post and the second solid post of adjacent galvanic couple, form thermocouple thermoelectric pile in series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710144113.2A CN107356341A (en) | 2017-03-10 | 2017-03-10 | Semiconductor thermoelectric module infrared detector and manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710144113.2A CN107356341A (en) | 2017-03-10 | 2017-03-10 | Semiconductor thermoelectric module infrared detector and manufacture method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107356341A true CN107356341A (en) | 2017-11-17 |
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ID=60271170
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710144113.2A Pending CN107356341A (en) | 2017-03-10 | 2017-03-10 | Semiconductor thermoelectric module infrared detector and manufacture method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101814867A (en) * | 2009-02-20 | 2010-08-25 | 清华大学 | Thermoelectric generator |
| JP2011117883A (en) * | 2009-12-07 | 2011-06-16 | Hioki Ee Corp | Thermopile infrared detection element and method of manufacturing the same |
| CN102576721A (en) * | 2009-09-29 | 2012-07-11 | 西门子公司 | Thermo-electric energy converter having a three-dimensional micro-structure, method for producing the energy converter and use of the energy converter |
| CN103296191A (en) * | 2012-02-28 | 2013-09-11 | 中国科学院上海微系统与信息技术研究所 | Minitype thermoelectric energy collector and manufacturing method thereof |
| CN103296190A (en) * | 2012-02-28 | 2013-09-11 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional thermoelectricity energy collector and manufacturing method thereof |
-
2017
- 2017-03-10 CN CN201710144113.2A patent/CN107356341A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101814867A (en) * | 2009-02-20 | 2010-08-25 | 清华大学 | Thermoelectric generator |
| CN102576721A (en) * | 2009-09-29 | 2012-07-11 | 西门子公司 | Thermo-electric energy converter having a three-dimensional micro-structure, method for producing the energy converter and use of the energy converter |
| JP2011117883A (en) * | 2009-12-07 | 2011-06-16 | Hioki Ee Corp | Thermopile infrared detection element and method of manufacturing the same |
| CN103296191A (en) * | 2012-02-28 | 2013-09-11 | 中国科学院上海微系统与信息技术研究所 | Minitype thermoelectric energy collector and manufacturing method thereof |
| CN103296190A (en) * | 2012-02-28 | 2013-09-11 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional thermoelectricity energy collector and manufacturing method thereof |
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Application publication date: 20171117 |