CN107331793A - A kind of silicon-based organic light-emitting device bottom electrode structural and its manufacture method - Google Patents
A kind of silicon-based organic light-emitting device bottom electrode structural and its manufacture method Download PDFInfo
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- CN107331793A CN107331793A CN201710614191.4A CN201710614191A CN107331793A CN 107331793 A CN107331793 A CN 107331793A CN 201710614191 A CN201710614191 A CN 201710614191A CN 107331793 A CN107331793 A CN 107331793A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention discloses a kind of silicon-based organic light-emitting device bottom electrode structural and its manufacture method, it is related to silicon-based organic light-emitting field, wherein silicon-based organic light-emitting device hearth electrode includes the first metal layer, connecting hole, transparent insulating film, organic contact layer, contain mos field effect transistor in silicon base, connecting hole is arranged in transparent insulating film, organic contact layer is connected to the first metal layer by connecting hole, and the first metal layer is connected to the output end of mos field effect transistor.The connecting hole of connection the first metal layer and organic contact layer is arranged on the marginal position or corner location of hearth electrode and protrudes from luminous zone.The passivation that insulate coats the peripheral edge of organic contact layer.The silicon-based organic light-emitting device bottom electrode structural of the present invention moves down reflector layer, through hole biases and covering insulation passivation processing is carried out to electrode, greatly improve flatness when organic luminous layer is laid and reduce thickness of electrode, improve luminous efficiency and yields.
Description
Technical field
The present invention relates to silicon-based organic light-emitting devices field, more particularly to a kind of silicon-based organic light-emitting device bottom electrode structural
And its manufacture method.
Background technology
In the device architecture of existing silicon-based organic light-emitting, anode is generally three layers or five-layer structure, usually titanium, nitrogen
Change titanium, aluminium, titanium, the vertical five-layer structure of titanium nitride, such as Authorization Notice No. is " CN102629667B " entitled " silicon substrate top
This structure is disclosed in transmitting organic light-emitting micro-display device and preparation method thereof ", in its disclosed technical scheme, connection sun
The through hole of pole is arranged in the middle of anode, easily causes hearth electrode surface or side out-of-flatness, as shown in Figure 1.In addition, five layers vertical
Anode construction overall height it is higher, when machine luminescent layer is equipped with anode, be easily formed not gentle fold, influence is luminous
Efficiency.
Therefore, those skilled in the art is directed to developing a kind of silicon-based organic light-emitting device and its manufacture method, will be anti-
Photosphere is moved down, through hole biasing and passivation processing of being insulated to electrode progress covering, when greatly improving organic luminous layer laying
Flatness and reduce thickness of electrode, improve luminous efficiency and yields.
The content of the invention
In view of the drawbacks described above of prior art, the technical problems to be solved by the invention are how to improve organic luminous layer
How flatness and reduce thickness during laying, improve luminous efficiency.
To achieve the above object, through hole can be biased and thing covering treatment is passivated to hearth electrode, further, will
Reflector layer is moved down.The invention provides a kind of silicon-based organic light-emitting device bottom electrode structural, including silicon base, it is characterised in that：
The hearth electrode includes containing metal oxygen in the first metal layer, connecting hole, transparent insulating film, organic contact layer, the silicon base
Compound semiconductor field effect transistor, the connecting hole is arranged in transparent insulating film, and the organic contact layer passes through connecting hole
The first metal layer is connected to, the first metal layer is connected to the output of the mos field effect transistor
End, the material of the organic contact layer is ITO, Cr, Mo, Ni, Pt, Au, Cu, Ti, W, Zr, Ta, ZrOx、VOx、MoOx、AlOx、
ZnOx、MoN、TiNx、TiSixNy、WSix、WNx、WSixTy、TaNx、TaSixNy、SiOx、SiNx、SiC、C60Simple substance or its any ratio
The mixture of example.
Further, the hearth electrode also include second metal layer, the second metal layer be arranged at organic contact layer and
Between the first metal layer, the connecting hole highly staggers with the second metal layer in same level to be set and is not connected with, institute
Second metal layer is stated to be included by transparent insulating film.
Further, the organic contact layer is very thin and transparent or translucent, and its thickness is no more than 50nm.
Further, the material of the transparent insulating film is silica or silicon nitride, and thickness is no more than 2 μm.
Further, the first metal layer and the material of second metal layer are Al or Ag, and thickness is not less than 50nm；Institute
The top edge and/or lower edge for stating the first metal layer and second metal layer are optionally coated with silicon substrate contact layer, the silicon
The material of base contact layer is the mixture of Cr, Ti, Ta, Ni, W or its oxide or nitride or its arbitrary proportion, and thickness is not
More than 100nm.
Further, the peripheral edge of the organic contact layer is coated by insulation passivation, is made in the organic contact layer
The region that is not wrapped by forms luminous zone, the insulation passivation be one kind in silica, silicon nitride, photoresist or its
Mixture.
Further, connect the first metal layer and the connecting hole of the organic contact layer is arranged on the hearth electrode
Marginal position or corner location and protrude from the luminous zone.
Further, the hearth electrode has depressed part, and the protuberance of the depressed part and adjacent hearth electrode is mutually embedding.
Further, the hearth electrode part on the connecting hole is by the insulation passivation cladding.
Further, the quantity for being arranged on the through hole of hearth electrode marginal position is 1-4, and hole size is no more than 1um.
Further, all through hole protrusions need not all facing one direction.
In addition, present invention also offers a kind of manufacture method of silicon-based organic light-emitting device hearth electrode, it is characterised in that bag
Include following steps：
Step 1, the mos field effect transistor is grown in the silicon base；
Step 2, the first metal layer is grown above the mos field effect transistor；
Step 3, growth regulation silicon monoxide or silicon nitride layer above the first metal layer；
Step 4, in first silica or silicon nitride layer make the connecting hole；
Step 5, above first silica or silicon nitride layer make the organic contact layer；
Further, if containing the second metal layer in the hearth electrode, also included between step 3 and step 4：
Step 3.1, in first silica or silicon nitride layer grow the second metal layer；
Step 3.2, growth regulation silica or silicon nitride layer in the second metal layer；
Further, first silica or silicon nitride layer and second silica or silicon nitride layer form described
Bright dielectric film；
If containing the insulation passivation in the hearth electrode, also include after step 5：
Step 5.1, at the organic contact layer edge make the insulation passivation.
Silicon-based organic light-emitting device of the present invention and its manufacture method, reflector layer is moved down, and through hole is biased and right
Electrode progress covering insulation passivation processing, greatly improves flatness when organic luminous layer is laid and reduces electrode thickness
Degree, improves luminous efficiency and yields.
The technique effect of the design of the present invention, concrete structure and generation is described further below with reference to accompanying drawing, with
It is fully understood from the purpose of the present invention, feature and effect.
Brief description of the drawings
Fig. 1 is the diagrammatic cross-section of the single hearth electrode of organic luminescent device in the prior art；
Fig. 2 (a) is the vertical section structure schematic diagram of the single hearth electrode of the preferred embodiment of the present invention；
Fig. 2 (b) is the vertical section structure schematic diagram of the single hearth electrode of another preferred embodiment of the present invention；
Fig. 3 (a) is the vertical profile of the single hearth electrode with insulation passivation cladding of the preferred embodiment of the present invention
Face structural representation；
Fig. 3 (b) is the vertical profile of the single hearth electrode with insulation passivation cladding of the preferred embodiment of the present invention
Face structural representation；
Fig. 4 (a) be the present invention a preferred embodiment have insulation passivation cladding and connecting hole biasing it is single
The vertical section structure schematic diagram of hearth electrode；
Fig. 4 (b) be the present invention a preferred embodiment have insulation passivation cladding and connecting hole biasing it is single
The vertical section structure schematic diagram of hearth electrode；
Fig. 5 (a) is the single hearth electrode top view of the preferred embodiment of the present invention；
Fig. 5 (b) is the single hearth electrode top view of another preferred embodiment of the invention；
Fig. 5 (c) is the single hearth electrode top view of another preferred embodiment of the invention；
Fig. 6 is the pel array top view of the preferred embodiment of the present invention；
Fig. 7 (a) is the single hearth electrode top view of another preferred embodiment of the invention；
Fig. 7 (b) is the single hearth electrode top view of another preferred embodiment of the invention；
Fig. 8 (a) is the pel array top view of another preferred embodiment of the invention；
Fig. 8 (b) is the pel array top view of another preferred embodiment of the invention.
Embodiment
Multiple preferred embodiments of the present invention are introduced below with reference to Figure of description, make its technology contents more clear and just
In understanding.The present invention can be emerged from by many various forms of embodiments, and protection scope of the present invention is not only limited
The embodiment that Yu Wenzhong is mentioned.
In the accompanying drawings, structure identical part is represented with same numbers label, everywhere the similar component of structure or function with
Like numeral label is represented.The size and thickness of each component shown in the drawings arbitrarily show that the present invention is not limited
The size and thickness of each component.In order that diagram is apparent, the appropriate thickness for exaggerating part in the place of some in accompanying drawing.
Embodiment one：
As shown in Fig. 2 (a), a kind of hearth electrode 01 of silicon-based organic light-emitting device, including silicon base are present embodiments provided
10, the hearth electrode 01 includes the first metal layer 11, connecting hole 12, transparent insulating film 13, organic contact layer 14, the silicon base
Contain mos field effect transistor 21 in 10, the connecting hole 12 is arranged in transparent insulating film 13, described
Organic contact layer 14 is connected to the first metal layer 11 by connecting hole 12, and the first metal layer 11 passes through plain conductor and inside
Through hole is connected to the output end 31 of the mos field effect transistor 21, the material of the organic contact layer 14
For ITO, Cr, Mo, Ni, Pt, Au, Cu, Ti, W, Zr, Ta, ZrOx、VOx、MoOx、AlOx、ZnOx、MoN、TiNx、TiSixNy、
WSix、WNx、WSixTy、TaNx、TaSixNy、SiOx、SiNx、SiC、C60The mixture of simple substance or its arbitrary proportion.First gold medal
Category layer 11 is used to provide reflecting surface, and it is saturating again after the formation reflection of the first metal layer 11 that incident ray 41 passes through organic contact layer 14
Cross the outgoing to outside electrode of organic contact layer 14.
Further, organic contact layer 14 is very thin and transparent or translucent, its thickness be no more than 50nm, it is excellent
Choosing value is 5~10nm.
Further, the material of transparent insulating film 13 is silica or silicon nitride, and thickness is no more than 2 μm, and preferred value is 1
μm。
Further, the material of the first metal layer 11 be Al or Ag, and thickness be not less than 50nm, preferred value be 500nm~
800nm；Further, the top edge and/or lower edge of the first metal layer 11 can be coated with silicon substrate contact layer, the silicon substrate contact
The material of layer is not more than for Cr, Ti, Ta, Ni, W or the mixture of its oxide or nitride or its arbitrary proportion, and thickness
100nm, preferably 20~50nm.
Embodiment two：
As shown in Fig. 2 (b), a kind of hearth electrode 01 of silicon-based organic light-emitting device, including silicon base are present embodiments provided
10, the hearth electrode 01 includes the first metal layer 11, connecting hole 12, transparent insulating film 13, organic contact layer 14, second metal layer
15, contain mos field effect transistor 21 in the silicon base 10, the connecting hole 12 be arranged at it is transparent absolutely
In velum 13, the organic contact layer 14 is connected to the first metal layer 11 by connecting hole 12, and the second metal layer 15 is set
Between organic contact layer 14 and the first metal layer 11, the connecting hole 12 is with the second metal layer 15 in same level height
Stagger and set and be not connected with, the second metal layer 12 is included by transparent insulating film 13.The first metal layer 11 passes through
Plain conductor and interior bone are connected to the output end 31 of the mos field effect transistor 21, described organic
Contact layer 14 is ITO, Cr, Mo, Ni, Pt, Au, Cu, Ti, W, Zr, Ta, ZrOx、VOx、MoOx、AlOx、ZnOx、MoN、TiNx、
TiSixNy、WSix、WNx、WSixTy、TaNx、TaSixNy、SiOx、SiNx、SiC、C60The mixture of simple substance or its arbitrary proportion.Institute
Stating second metal layer 15 is used to provide reflecting surface, and incident ray 41 reflects through organic contact layer 14 in the formation of second metal layer 15
After be again passed through the outgoing to outside electrode of organic contact layer 14.First metal is used as conductive layer.
Further, organic contact layer 14 is very thin and transparent or translucent, its thickness be no more than 50nm, it is excellent
Choosing value is 5~10nm.
Further, the material of transparent insulating film 13 is silica or silicon nitride, and thickness is no more than 2 μm, and preferred value is 1
μm。
Further, the first metal layer 11 and the material of second metal layer 15 are Al or Ag, and thickness is not less than 50nm, excellent
Choosing value is 500nm~800nm.Further, the first metal layer 11 and the top edge and/or lower edge of second metal layer 15 can be wrapped
It is covered with silicon substrate contact layer, the material of the silicon substrate contact layer is Cr, Ti, Ta, Ni, W or its oxide or nitride or its is any
The mixture of ratio, and thickness is not more than 100nm, preferably 20~50nm.Further, second metal layer can be contained only
The silicon substrate contact layer of edge and/or lower edge is without intermediate layer.
Embodiment three：
As shown in Fig. 3 (a), in this embodiment, hearth electrode 01 and embodiment one are essentially identical, are particular in that have
The peripheral edge of machine contact layer 14 is coated by insulation passivation 16, the region not being wrapped by organic contact layer 14 is formed luminous
Area, the insulation passivation 16 is one kind or its mixture in silica, silicon nitride, photoresist.
Example IV：
As shown in Fig. 3 (b), in this embodiment, hearth electrode 01 and embodiment two are essentially identical, are particular in that have
The peripheral edge of machine contact layer 14 is coated by insulation passivation 16, the region not being wrapped by organic contact layer 14 is formed luminous
Area, the insulation passivation 16 is one kind or its mixture in silica, silicon nitride, photoresist.
Embodiment five：
As shown in Fig. 4 (a), in this embodiment, hearth electrode 01 and embodiment three are essentially identical, are particular in that, even
The connecting hole 12 for connecing the first metal layer 11 and organic contact layer 14 is arranged on the marginal position or corner location of hearth electrode 01 and dashed forward
For luminous zone.
Further, shown in the top view of hearth electrode 01 such as Fig. 5 (a)-(c), insulation is coated with around hearth electrode 01 blunt
Compound 16, ledge is 91, and the hearth electrode part on connecting hole 12 is coated by insulation passivation 16.Fig. 5 (a) is connecting hole 12
The top view of the marginal position of hearth electrode 01 is arranged on, Fig. 5 (b) is the top view that connecting hole 12 is arranged on the corner location of hearth electrode 01
Figure, Fig. 5 (c) is the top view that another connecting hole 12 is arranged on the corner location of hearth electrode 01.
Further, Fig. 6 illustrates the pel array being made up of some hearth electrodes 01, in the array, and connecting hole 12 is dashed forward
Position for hearth electrode 01 is located at the left side and upside of hearth electrode 01.In other examples, connecting hole 12 protrudes from hearth electrode
01 position can be located at the right side or downside of hearth electrode 01.
Further, the hearth electrode 01 has depressed part, and Fig. 7 (a)-(b) gives two kinds of examples.Fig. 7 (a) is connection
Hole 12 is arranged on the marginal position of hearth electrode 01 and the top view with depressed part 92, and Fig. 7 (b) is that connecting hole 12 is arranged on hearth electrode
01 corner location and the top view with depressed part 92.
Further, the depressed part 92 of the hearth electrode 01 and the protuberance 91 of adjacent hearth electrode are mutually embedding, and Fig. 8 illustrates two
Plant the depressed part embodiment mutually embedding with the protuberance of adjacent hearth electrode.In Fig. 8 (a), connecting hole 12 is arranged on the side of hearth electrode 01
The protuberance of edge position and its depressed part and adjacent hearth electrode is mutually embedding.In Fig. 8 (b), connecting hole 12 is arranged on the side of hearth electrode
The protuberance of Angle Position and its depressed part and adjacent hearth electrode is mutually embedding.In other examples, the depressed part of hearth electrode may be disposed at
Any marginal position of hearth electrode and mutually embedding with the protuberance of adjacent hearth electrode.
Further, the quantity for being arranged on the through hole of hearth electrode marginal position is 1-4, and hole size is no more than 1um.
Further, all through hole protrusions need not all facing one direction.
Further, insulation passivation 16 cladding hearth electrode 01 edge forms the angle on inclined-plane, the inclined-plane and plane
Less than 75 degree.
Further, the edge extent of insulation passivation 16 cladding hearth electrode 01 is less than 1 micron and height is micro- less than 0.5
Surface roughness on rice, and the insulation cladding hearth electrode 01 of passivation 16 is less than 1 nanometer.
Embodiment six：
As shown in Fig. 4 (a), in this embodiment, hearth electrode 01 is essentially identical with example IV, is particular in that, even
The connecting hole 12 for connecing the first metal layer 11 and organic contact layer 14 is arranged on the marginal position or corner location of hearth electrode 01 and dashed forward
For luminous zone.
Further, shown in the top view of hearth electrode 01 such as Fig. 5 (a)-(c), insulation is coated with around hearth electrode 01 blunt
Compound 16, ledge is 91, and the hearth electrode part on connecting hole 12 is coated by insulation passivation 16.Fig. 5 (a) is connecting hole 12
The top view of the marginal position of hearth electrode 01 is arranged on, Fig. 5 (b) is the top view that connecting hole 12 is arranged on the corner location of hearth electrode 01
Figure, Fig. 5 (c) is the top view that another connecting hole 12 is arranged on the corner location of hearth electrode 01.
Further, Fig. 6 illustrates the pel array being made up of some hearth electrodes 01, in the array, and connecting hole 12 is dashed forward
Position for hearth electrode 01 is located at the left side and upside of hearth electrode 01.In other examples, connecting hole 12 protrudes from hearth electrode
01 position can be located at the right side or downside of hearth electrode 01.
Further, the hearth electrode 01 has depressed part, and Fig. 7 (a)-(b) gives two kinds of examples.Fig. 7 (a) is connection
Hole 12 is arranged on the marginal position of hearth electrode 01 and the top view with depressed part 92, and Fig. 7 (b) is that connecting hole 12 is arranged on hearth electrode
01 corner location and the top view with depressed part 92.
Further, the depressed part 92 of the hearth electrode 01 and the protuberance 91 of adjacent hearth electrode are mutually embedding, and Fig. 8 illustrates two
Plant the depressed part embodiment mutually embedding with the protuberance of adjacent hearth electrode.In Fig. 8 (a), connecting hole 12 is arranged on the side of hearth electrode 01
The protuberance of edge position and its depressed part and adjacent hearth electrode is mutually embedding.In Fig. 8 (b), connecting hole 12 is arranged on the side of hearth electrode
The protuberance of Angle Position and its depressed part and adjacent hearth electrode is mutually embedding.In other examples, the depressed part of hearth electrode may be disposed at
Any marginal position of hearth electrode and mutually embedding with the protuberance of adjacent hearth electrode.
Further, the quantity for being arranged on the through hole of hearth electrode marginal position is 1-4, and hole size is no more than 1um.
Further, all through hole protrusions need not all facing one direction.
Further, insulation passivation 16 cladding hearth electrode 01 edge forms the angle on inclined-plane, the inclined-plane and plane
Less than 75 degree.
Further, the edge extent of insulation passivation 16 cladding hearth electrode 01 is less than 1 micron and height is micro- less than 0.5
Surface roughness on rice, and the insulation cladding hearth electrode 01 of passivation 16 is less than 1 nanometer.
Embodiment seven：
In this embodiment, it is essentially identical with embodiment one to six, it is particular in that, makes organic on hearth electrode 01
Material, the organic material includes hole injection layer, hole transmission layer, organic luminous layer, electron transfer layer, electron injecting layer.
Further, top electrode is made on the organic material.
Further, thin-film encapsulation layer is made on top electrode.
Further, colour filter can also be made between top electrode and thin-film encapsulation layer.
Embodiment eight：
Present invention also offers the manufacture method of the silicon-based organic light-emitting device hearth electrode 10, comprise the following steps：
Step 1, the growth mos field effect transistor 21 in silicon base 10；
Step 2, the growth the first metal layer 11 above mos field effect transistor 21；
Step 3, on the first metal layer 11 side's growth regulation silicon monoxides or silicon nitride layer 13；
Step 4, the connecting hole 12 is made in first silica or silicon nitride layer 13；
Step 5, the making organic contact layer 14 above first silica or silicon nitride layer 13；
Further, if containing the second metal layer in the hearth electrode 10, also wrapped between step 3 and step 4
Contain：
Step 3.1, the second metal layer 15 is grown in first silica or silicon nitride layer；
Step 3.2, growth regulation silica or silicon nitride layer in the second metal layer 15；
First silica or silicon nitride layer and second silica or silicon nitride layer form the transparent insulating film
13；
Further, if containing the insulation passivation 16 in the hearth electrode 10, also including after step 5：
Step 5.1, the edge of organic contact layer 14 make it is described insulation passivation 16.
Preferred embodiment of the invention described in detail above.It should be appreciated that the ordinary skill of this area is without wound
The property made work just can make many modifications and variations according to the design of the present invention.Therefore, all technical staff in the art
Pass through the available technology of logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Scheme, all should be in the protection domain being defined in the patent claims.
Claims (10)
1. a kind of silicon-based organic light-emitting device bottom electrode structural, including silicon base, it is characterised in that the hearth electrode includes first
It is brilliant containing metal oxide semiconductor field-effect in metal level, connecting hole, transparent insulating film, organic contact layer, the silicon base
Body pipe, the connecting hole is arranged in transparent insulating film, and the organic contact layer is connected to the first metal by the connecting hole
Layer, the first metal layer is connected to the output end of the mos field effect transistor, the organic contact
The material of layer is ITO, Cr, Mo, Ni, Pt, Au, Cu, Ti, W, Zr, Ta, ZrOx、VOx、MoOx、AlOx、ZnOx、MoN、TiNx、
TiSixNy、WSix、WNx、WSixTy、TaNx、TaSixNy、SiOx、SiNx、SiC、C60The mixture of simple substance or its arbitrary proportion.
2. silicon-based organic light-emitting device bottom electrode structural as claimed in claim 1, it is characterised in that the hearth electrode also includes
Second metal layer, the second metal layer is arranged between the organic contact layer and the first metal layer, the connecting hole
Highly stagger in same level with the second metal layer and set and be not connected with, the second metal layer is by transparent insulating film institute
Comprising.
3. silicon-based organic light-emitting device bottom electrode structural as claimed in claim 1 or 2, it is characterised in that the organic contact
The transparent or translucent of layer, and its thickness is no more than 50nm.
4. silicon-based organic light-emitting device bottom electrode structural as claimed in claim 1 or 2, it is characterised in that the transparent insulation
The material of film is silica or silicon nitride, and thickness is no more than 2 μm.
5. silicon-based organic light-emitting device bottom electrode structural as claimed in claim 1 or 2, it is characterised in that first metal
Layer and the material of the second metal layer are Al or Ag, and thickness is not less than 50nm；The first metal layer and second metal layer
Top edge and/or lower edge be optionally coated with silicon substrate contact layer, the material of the silicon substrate contact layer is Cr, Ti, Ta,
The mixture of the arbitrary proportion of Ni, W or its oxide or nitride or above-mentioned material, and thickness is not more than 100nm.
6. silicon-based organic light-emitting device bottom electrode structural as claimed in claim 1 or 2, it is characterised in that the organic contact
The peripheral edge of layer is coated by insulation passivation, the region not being wrapped by the organic contact layer is formed luminous zone, described
Insulation passivation is one kind or its mixture in silica, silicon nitride, photoresist.
7. silicon-based organic light-emitting device bottom electrode structural as claimed in claim 1 or 2, it is characterised in that connection described first
The connecting hole of metal level and the organic contact layer is arranged on the marginal position or corner location of the hearth electrode and protrudes from institute
State luminous zone.
8. silicon-based organic light-emitting device bottom electrode structural as claimed in claim 1 or 2, it is characterised in that the hearth electrode tool
There is depressed part, the protuberance of the depressed part and adjacent hearth electrode is mutually embedding.
9. silicon-based organic light-emitting device bottom electrode structural as claimed in claim 1 or 2, it is characterised in that on the connecting hole
Hearth electrode part by it is described insulation passivation cladding.
10. such as the manufacture method of any one silicon-based organic light-emitting device bottom electrode structural of claim 1-9, it is characterised in that
Comprise the following steps：
Step 1, the mos field effect transistor is grown in the silicon base；
Step 2, the first metal layer is grown above the mos field effect transistor；
Step 3, growth regulation silicon monoxide or silicon nitride layer above the first metal layer；
Step 4, in first silica or silicon nitride layer make the connecting hole；
Step 5, above first silica or silicon nitride layer make the organic contact layer；
If containing the second metal layer in the hearth electrode, also included between step 3 and step 4：
Step 3.1, in first silica or silicon nitride layer grow the second metal layer；
Step 3.2, growth regulation silica or silicon nitride layer in the second metal layer；
First silica or silicon nitride layer and second silica or silicon nitride layer form the transparent insulating film；
If containing the insulation passivation in the hearth electrode, also include after step 5：
Step 5.1, at the organic contact layer edge make the insulation passivation.
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