CN107331793B - A kind of silicon-based organic light-emitting device bottom electrode structural and its manufacturing method - Google Patents
A kind of silicon-based organic light-emitting device bottom electrode structural and its manufacturing method Download PDFInfo
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- CN107331793B CN107331793B CN201710614191.4A CN201710614191A CN107331793B CN 107331793 B CN107331793 B CN 107331793B CN 201710614191 A CN201710614191 A CN 201710614191A CN 107331793 B CN107331793 B CN 107331793B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/805—Electrodes
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- H—ELECTRICITY
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- H10K2102/301—Details of OLEDs
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- H—ELECTRICITY
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Abstract
The invention discloses a kind of silicon-based organic light-emitting device bottom electrode structural and its manufacturing methods, it is related to silicon-based organic light-emitting field, wherein silicon-based organic light-emitting device hearth electrode includes the first metal layer, connecting hole, transparent insulating film, organic contact layer, contain Metal Oxide Semiconductor Field Effect Transistor in silicon base, connecting hole is set in transparent insulating film, organic contact layer is connected to the first metal layer by connecting hole, and the first metal layer is connected to the output end of Metal Oxide Semiconductor Field Effect Transistor.The connecting hole of connection the first metal layer and organic contact layer is arranged in the marginal position of hearth electrode or corner location and protrudes from luminous zone.The peripheral edge of the passivation that insulate cladding organic contact layer.Silicon-based organic light-emitting device bottom electrode structural of the invention moves down reflective layer, through-hole biases and carries out covering insulation passivation processing to electrode, it greatly improves flatness when organic luminous layer is laid with and reduces thickness of electrode, improve luminous efficiency and yields.
Description
Technical field
The present invention relates to silicon-based organic light-emitting devices field more particularly to a kind of silicon-based organic light-emitting device bottom electrode structurals
And its manufacturing method.
Background technique
In the device architecture of existing silicon-based organic light-emitting, anode is generally three layers or five-layer structure, usually titanium, nitrogen
The vertical five-layer structure for changing titanium, aluminium, titanium, titanium nitride, if Authorization Notice No. is entitled " the silicon substrate top " CN102629667B "
Disclose this structure in transmitting organic light-emitting micro-display device and preparation method thereof ", in disclosed technical solution, connection sun
Between the through-hole setting in the anode of pole, it is be easy to cause hearth electrode surface or side out-of-flatness, as shown in Figure 1.In addition, five layers vertical
Anode construction overall height it is higher, when being equipped with machine luminescent layer on anode, be easily formed not gentle fold, influence to shine
Efficiency.
Therefore, those skilled in the art is dedicated to developing a kind of silicon-based organic light-emitting device and its manufacturing method, will be anti-
Photosphere moves down, and through-hole biases and carries out covering insulation passivation processing to electrode, when greatly improving organic luminous layer laying
Flatness and reduce thickness of electrode, improve luminous efficiency and yields.
Summary of the invention
In view of the above drawbacks of the prior art, the technical problem to be solved by the present invention is to how improve organic luminous layer
How flatness and reduction thickness when laying, improve luminous efficiency.
To achieve the above object, through-hole can be biased and object covering treatment is passivated to hearth electrode, it further, will
Reflective layer moves down.The present invention provides a kind of silicon-based organic light-emitting device bottom electrode structurals, including silicon base, it is characterised in that:
The hearth electrode includes the first metal layer, connecting hole, transparent insulating film, organic contact layer, contains metal oxygen in the silicon base
Compound semiconductor field effect transistor, the connecting hole are set in transparent insulating film, and the organic contact layer passes through connecting hole
It is connected to the first metal layer, the first metal layer is connected to the output of the Metal Oxide Semiconductor Field Effect Transistor
End, the material of the organic contact layer are ITO, Cr, Mo, Ni, Pt, Au, Cu, Ti, W, Zr, Ta, ZrOx、VOx、MoOx、AlOx、
ZnOx、MoN、TiNx、TiSixNy、WSix、WNx、WSixTy、TaNx、TaSixNy、SiOx、SiNx、SiC、C60Simple substance or its any ratio
The mixture of example.
Further, the hearth electrode further includes second metal layer, the second metal layer be set to organic contact layer and
Between the first metal layer, the connecting hole is arranged in a staggered manner and is not connected with, institute in same level height with the second metal layer
Second metal layer, which is stated, by transparent insulating film includes.
Further, the organic contact layer is very thin and transparent or translucent, thickness are no more than 50nm.
Further, the material of the transparent insulating film is silicon oxide or silicon nitride, and thickness is no more than 2 μm.
Further, the first metal layer and the material of second metal layer are Al or Ag, and thickness is not less than 50nm；Institute
The top edge and/or lower edge for stating the first metal layer and second metal layer are optionally coated with silicon substrate contact layer, the silicon
The material of base contact layer is the mixture of Cr, Ti, Ta, Ni, W or its oxide or nitride or its arbitrary proportion, and thickness is not
Greater than 100nm.
Further, the peripheral edge of the organic contact layer is coated by insulation passivation, is made in the organic contact layer
The region that is not wrapped by forms luminous zone, the insulation passivation for one of silica, silicon nitride, photoresist or its
Mixture.
Further, the hearth electrode is arranged in the connecting hole for connecting the first metal layer and the organic contact layer
Marginal position or corner location and protrude from the luminous zone.
Further, the hearth electrode has recessed portion, and the protruding portion of the recessed portion and adjacent hearth electrode is mutually embedding.
Further, the hearth electrode part on the connecting hole is coated by the insulation passivation.
Further, the quantity that the through-hole of hearth electrode marginal position is arranged in is 1-4, and hole size is no more than 1um.
Further, all through-hole protrusions need not all facing one direction.
In addition, the present invention also provides a kind of manufacturing methods of silicon-based organic light-emitting device hearth electrode, which is characterized in that packet
Include following steps:
Step 1 grows the Metal Oxide Semiconductor Field Effect Transistor in the silicon base；
Step 2 grows the first metal layer above the Metal Oxide Semiconductor Field Effect Transistor；
Step 3, growth regulation silicon monoxide or silicon nitride layer above the first metal layer；
Step 4 makes the connecting hole in the first silicon oxide or silicon nitride layer；
Step 5 makes the organic contact layer above the first silicon oxide or silicon nitride layer；
Further, if containing the second metal layer in the hearth electrode, also include between step 3 and step 4:
Step 3.1 grows the second metal layer in the first silicon oxide or silicon nitride layer；
Step 3.2, growth regulation silica or silicon nitride layer in the second metal layer；
Further, the first silicon oxide or silicon nitride layer and the second silicon oxide or silicon nitride layer are formed described
Bright insulating film；
If containing the insulation passivation in the hearth electrode, also include after step 5:
Step 5.1 makes the insulation passivation at the organic contact layer edge.
Silicon-based organic light-emitting device of the present invention and its manufacturing method, reflective layer is moved down, through-hole biasing and it is right
Electrode carries out covering insulation passivation processing, greatly improves flatness when organic luminous layer is laid with and reduces electrode thickness
Degree, improves luminous efficiency and yields.
It is described further below with reference to technical effect of the attached drawing to design of the invention, specific structure and generation, with
It is fully understood from the purpose of the present invention, feature and effect.
Detailed description of the invention
Fig. 1 is the diagrammatic cross-section of the single hearth electrode of organic luminescent device in the prior art；
Fig. 2 (a) is the vertical section structure schematic diagram of the single hearth electrode of a preferred embodiment of the invention；
Fig. 2 (b) is the vertical section structure schematic diagram of the single hearth electrode of another preferred embodiment of the invention；
Fig. 3 (a) is the vertical profile of the single hearth electrode with insulation passivation cladding of a preferred embodiment of the invention
Face structural schematic diagram；
Fig. 3 (b) is the vertical profile of the single hearth electrode with insulation passivation cladding of a preferred embodiment of the invention
Face structural schematic diagram；
Fig. 4 (a) be a preferred embodiment of the invention have insulation passivation cladding and connecting hole biasing it is single
The vertical section structure schematic diagram of hearth electrode；
Fig. 4 (b) be a preferred embodiment of the invention have insulation passivation cladding and connecting hole biasing it is single
The vertical section structure schematic diagram of hearth electrode；
Fig. 5 (a) is the single hearth electrode top view of a preferred embodiment of the invention；
Fig. 5 (b) is the single hearth electrode top view of another preferred embodiment of the invention；
Fig. 5 (c) is the single hearth electrode top view of another preferred embodiment of the invention；
Fig. 6 is the pixel array top view of a preferred embodiment of the invention；
Fig. 7 (a) is the single hearth electrode top view of another preferred embodiment of the invention；
Fig. 7 (b) is the single hearth electrode top view of another preferred embodiment of the invention；
Fig. 8 (a) is the pixel array top view of another preferred embodiment of the invention；
Fig. 8 (b) is the pixel array top view of another preferred embodiment of the invention.
Specific embodiment
Multiple preferred embodiments of the invention are introduced below with reference to Figure of description, keep its technology contents more clear and just
In understanding.The present invention can be emerged from by many various forms of embodiments, and protection scope of the present invention not only limits
The embodiment that Yu Wenzhong is mentioned.
In the accompanying drawings, the identical component of structure is indicated with same numbers label, everywhere the similar component of structure or function with
Like numeral label indicates.The size and thickness of each component shown in the drawings are to be arbitrarily shown, and there is no limit by the present invention
The size and thickness of each component.Apparent in order to make to illustrate, some places suitably exaggerate the thickness of component in attached drawing.
Embodiment one:
As shown in Fig. 2 (a), a kind of hearth electrode 01 of silicon-based organic light-emitting device, including silicon base are present embodiments provided
10, the hearth electrode 01 includes the first metal layer 11, connecting hole 12, transparent insulating film 13, organic contact layer 14, the silicon base
Contain Metal Oxide Semiconductor Field Effect Transistor 21 in 10, the connecting hole 12 is set in transparent insulating film 13, described
Organic contact layer 14 is connected to the first metal layer 11 by connecting hole 12, and the first metal layer 11 passes through plain conductor and inside
Through-hole is connected to the output end 31 of the Metal Oxide Semiconductor Field Effect Transistor 21, the material of the organic contact layer 14
For ITO, Cr, Mo, Ni, Pt, Au, Cu, Ti, W, Zr, Ta, ZrOx、VOx、MoOx、AlOx、ZnOx、MoN、TiNx、TiSixNy、
WSix、WNx、WSixTy、TaNx、TaSixNy、SiOx、SiNx、SiC、C60The mixture of simple substance or its arbitrary proportion.First gold medal
For category layer 11 for providing reflecting surface, incident ray 41 is saturating again after the first metal layer 11 forms reflection through organic contact layer 14
Organic contact layer 14 is crossed to be emitted to outside electrode.
Further, organic contact layer 14 is very thin and transparent or translucent, excellent with a thickness of 50nm is no more than
Choosing value is 5~10nm.
Further, the material of transparent insulating film 13 is silicon oxide or silicon nitride, and thickness is no more than 2 μm, preferred value 1
μm。
Further, the material of the first metal layer 11 be Al or Ag, and thickness be not less than 50nm, preferred value be 500nm~
800nm；Further, the top edge of the first metal layer 11 and/or lower edge can be coated with silicon substrate contact layer, the silicon substrate contact
The material of layer is the mixture of Cr, Ti, Ta, Ni, W or its oxide or nitride or its arbitrary proportion, and thickness is not more than
100nm, preferably 20~50nm.
Embodiment two:
As shown in Fig. 2 (b), a kind of hearth electrode 01 of silicon-based organic light-emitting device, including silicon base are present embodiments provided
10, the hearth electrode 01 includes the first metal layer 11, connecting hole 12, transparent insulating film 13, organic contact layer 14, second metal layer
15, contain Metal Oxide Semiconductor Field Effect Transistor 21 in the silicon base 10, the connecting hole 12 be set to it is transparent absolutely
In velum 13, the organic contact layer 14 is connected to the first metal layer 11 by connecting hole 12, and the second metal layer 15 is arranged
Between organic contact layer 14 and the first metal layer 11, the connecting hole 12 is with the second metal layer 15 in same level height
It is arranged in a staggered manner and is not connected with, the second metal layer 12 includes by transparent insulating film 13.The first metal layer 11 passes through
Plain conductor and interior bone are connected to the output end 31 of the Metal Oxide Semiconductor Field Effect Transistor 21, described organic
Contact layer 14 is ITO, Cr, Mo, Ni, Pt, Au, Cu, Ti, W, Zr, Ta, ZrOx、VOx、MoOx、AlOx、ZnOx、MoN、TiNx、
TiSixNy、WSix、WNx、WSixTy、TaNx、TaSixNy、SiOx、SiNx、SiC、C60The mixture of simple substance or its arbitrary proportion.Institute
Second metal layer 15 is stated for providing reflecting surface, incident ray 41, which is formed through organic contact layer 14 in second metal layer 15, to be reflected
After be again passed through organic contact layer 14 and be emitted to outside electrode.First metal is as conductive layer.
Further, organic contact layer 14 is very thin and transparent or translucent, excellent with a thickness of 50nm is no more than
Choosing value is 5~10nm.
Further, the material of transparent insulating film 13 is silicon oxide or silicon nitride, and thickness is no more than 2 μm, preferred value 1
μm。
Further, the first metal layer 11 and the material of second metal layer 15 are Al or Ag, and thickness is not less than 50nm, excellent
Choosing value is 500nm~800nm.Further, the top edge and/or lower edge of the first metal layer 11 and second metal layer 15 can wrap
It is covered with silicon substrate contact layer, the material of the silicon substrate contact layer is Cr, Ti, Ta, Ni, W or its oxide or nitride or it is any
The mixture of ratio, and thickness is not more than 100nm, preferably 20~50nm.Further, second metal layer can be contained only
The silicon substrate contact layer of edge and/or lower edge is without middle layer.
Embodiment three:
As shown in Fig. 3 (a), in this embodiment, hearth electrode 01 is basically the same as the first embodiment, and is particular in that, is had
The peripheral edge of machine contact layer 14 is coated by insulation passivation 16, forms the region not being wrapped by organic contact layer 14 luminous
Area, the insulation passivation 16 are or mixtures thereof one of silica, silicon nitride, photoresist.
Example IV:
As shown in Fig. 3 (b), in this embodiment, hearth electrode 01 and embodiment two are essentially identical, are particular in that have
The peripheral edge of machine contact layer 14 is coated by insulation passivation 16, forms the region not being wrapped by organic contact layer 14 luminous
Area, the insulation passivation 16 are or mixtures thereof one of silica, silicon nitride, photoresist.
Embodiment five:
As shown in Fig. 4 (a), in this embodiment, hearth electrode 01 and embodiment three are essentially identical, are particular in that, even
The marginal position or corner location and prominent of hearth electrode 01 is arranged in the connecting hole 12 for connecing the first metal layer 11 and organic contact layer 14
For luminous zone.
Further, shown in the top view of hearth electrode 01 such as Fig. 5 (a)-(c), it is blunt that insulation is coated with around hearth electrode 01
Compound 16, protrusion 91, the hearth electrode part on connecting hole 12 are coated by insulation passivation 16.Fig. 5 (a) is connecting hole 12
The top view of 01 marginal position of hearth electrode is set, and Fig. 5 (b) is the top view that 01 corner location of hearth electrode is arranged in connecting hole 12
Figure, Fig. 5 (c) are the top view that 01 corner location of hearth electrode is arranged in another connecting hole 12.
Further, Fig. 6 illustrates the pixel array being made of several hearth electrodes 01, and in the array, connecting hole 12 is prominent
It is located at the left side and upside of hearth electrode 01 for the position of hearth electrode 01.In other examples, connecting hole 12 protrudes from hearth electrode
01 position can be located at the right side or downside of hearth electrode 01.
Further, the hearth electrode 01 has recessed portion, and Fig. 7 (a)-(b) gives two kinds of examples.Fig. 7 (a) is connection
01 marginal position of hearth electrode and the top view with recessed portion 92 is arranged in hole 12, and Fig. 7 (b) is that connecting hole 12 is arranged in hearth electrode
01 corner location and the top view with recessed portion 92.
Further, the recessed portion 92 of the hearth electrode 01 and the protruding portion 91 of adjacent hearth electrode are mutually embedding, and Fig. 8 illustrates two
The kind recessed portion embodiment mutually embedding with the protruding portion of adjacent hearth electrode.In Fig. 8 (a), connecting hole 12 is arranged on 01 side of hearth electrode
The protruding portion of edge position and its recessed portion and adjacent hearth electrode is mutually embedding.In Fig. 8 (b), the side of hearth electrode is arranged in connecting hole 12
The protruding portion of Angle Position and its recessed portion and adjacent hearth electrode is mutually embedding.In other examples, the recessed portion of hearth electrode may be disposed at
Any marginal position of hearth electrode and mutually embedding with the protruding portion of adjacent hearth electrode.
Further, the quantity that the through-hole of hearth electrode marginal position is arranged in is 1-4, and hole size is no more than 1um.
Further, all through-hole protrusions need not all facing one direction.
Further, insulation passivation 16 coats 01 edge of hearth electrode and forms inclined-plane, the angle on the inclined-plane and plane
Less than 75 degree.
Further, insulation passivation 16 coats the edge extent of hearth electrode 01 less than 1 micron and height is micro- less than 0.5
Rice, and the passivation 16 that insulate coats the surface roughness on hearth electrode 01 less than 1 nanometer.
Embodiment six:
As shown in Fig. 4 (a), in this embodiment, hearth electrode 01 is essentially identical with example IV, is particular in that, even
The marginal position or corner location and prominent of hearth electrode 01 is arranged in the connecting hole 12 for connecing the first metal layer 11 and organic contact layer 14
For luminous zone.
Further, shown in the top view of hearth electrode 01 such as Fig. 5 (a)-(c), it is blunt that insulation is coated with around hearth electrode 01
Compound 16, protrusion 91, the hearth electrode part on connecting hole 12 are coated by insulation passivation 16.Fig. 5 (a) is connecting hole 12
The top view of 01 marginal position of hearth electrode is set, and Fig. 5 (b) is the top view that 01 corner location of hearth electrode is arranged in connecting hole 12
Figure, Fig. 5 (c) are the top view that 01 corner location of hearth electrode is arranged in another connecting hole 12.
Further, Fig. 6 illustrates the pixel array being made of several hearth electrodes 01, and in the array, connecting hole 12 is prominent
It is located at the left side and upside of hearth electrode 01 for the position of hearth electrode 01.In other examples, connecting hole 12 protrudes from hearth electrode
01 position can be located at the right side or downside of hearth electrode 01.
Further, the hearth electrode 01 has recessed portion, and Fig. 7 (a)-(b) gives two kinds of examples.Fig. 7 (a) is connection
01 marginal position of hearth electrode and the top view with recessed portion 92 is arranged in hole 12, and Fig. 7 (b) is that connecting hole 12 is arranged in hearth electrode
01 corner location and the top view with recessed portion 92.
Further, the recessed portion 92 of the hearth electrode 01 and the protruding portion 91 of adjacent hearth electrode are mutually embedding, and Fig. 8 illustrates two
The kind recessed portion embodiment mutually embedding with the protruding portion of adjacent hearth electrode.In Fig. 8 (a), connecting hole 12 is arranged on 01 side of hearth electrode
The protruding portion of edge position and its recessed portion and adjacent hearth electrode is mutually embedding.In Fig. 8 (b), the side of hearth electrode is arranged in connecting hole 12
The protruding portion of Angle Position and its recessed portion and adjacent hearth electrode is mutually embedding.In other examples, the recessed portion of hearth electrode may be disposed at
Any marginal position of hearth electrode and mutually embedding with the protruding portion of adjacent hearth electrode.
Further, the quantity that the through-hole of hearth electrode marginal position is arranged in is 1-4, and hole size is no more than 1um.
Further, all through-hole protrusions need not all facing one direction.
Further, insulation passivation 16 coats 01 edge of hearth electrode and forms inclined-plane, the angle on the inclined-plane and plane
Less than 75 degree.
Further, insulation passivation 16 coats the edge extent of hearth electrode 01 less than 1 micron and height is micro- less than 0.5
Rice, and the passivation 16 that insulate coats the surface roughness on hearth electrode 01 less than 1 nanometer.
Embodiment seven:
In this embodiment, essentially identical with embodiment one to six, it is particular in that, is made on hearth electrode 01 organic
Material, the organic material include hole injection layer, hole transmission layer, organic luminous layer, electron transfer layer, electron injecting layer.
Further, top electrode is made on the organic material.
Further, thin-film encapsulation layer is made on top electrode.
Further, colour filter can also be made between top electrode and thin-film encapsulation layer.
Embodiment eight:
The present invention also provides the manufacturing methods of the silicon-based organic light-emitting device hearth electrode 10, comprising the following steps:
Step 1 grows Metal Oxide Semiconductor Field Effect Transistor 21 in silicon base 10；
Step 2 grows the first metal layer 11 above Metal Oxide Semiconductor Field Effect Transistor 21；
Step 3, on the first metal layer 11 side's growth regulation silicon monoxides or silicon nitride layer 13；
Step 4 makes the connecting hole 12 in the first silicon oxide or silicon nitride layer 13；
Step 5 makes the organic contact layer 14 above the first silicon oxide or silicon nitride layer 13；
Further, it if containing the second metal layer in the hearth electrode 10, is also wrapped between step 3 and step 4
Contain:
Step 3.1 grows the second metal layer 15 in the first silicon oxide or silicon nitride layer；
Step 3.2, growth regulation silica or silicon nitride layer in the second metal layer 15；
The first silicon oxide or silicon nitride layer and the second silicon oxide or silicon nitride layer form the transparent insulating film
13；
Further, if containing the insulation passivation 16 in the hearth electrode 10, also include after step 5:
Step 5.1 makes the insulation passivation 16 at 14 edge of organic contact layer.
The preferred embodiment of the present invention has been described in detail above.It should be appreciated that the ordinary skill of this field is without wound
The property made labour, which according to the present invention can conceive, makes many modifications and variations.Therefore, all technician in the art
Pass through the available technology of logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Scheme, all should be within the scope of protection determined by the claims.
Claims (7)
1. a kind of silicon-based organic light-emitting device bottom electrode structural, including silicon base, which is characterized in that the hearth electrode includes first
Metal layer, connecting hole, transparent insulating film, organic contact layer, it is brilliant containing metal oxide semiconductor field-effect in the silicon base
Body pipe, the connecting hole are set in transparent insulating film, and the organic contact layer is connected to the first metal by the connecting hole
Layer, the first metal layer are connected to the output end of the Metal Oxide Semiconductor Field Effect Transistor, the organic contact
Layer material be ITO, Cr, Mo, Ni, Pt, Au, Cu, Ti, W, Zr, Ta, ZrOx, VOx, MoOx, AlOx, ZnOx, MoN, TiNx,
One of TiSixNy, WSix, WNx, WSixTy, TaNx, TaSixNy, SiOx, SiNx, SiC material or its arbitrary proportion
Mixture；
The hearth electrode further includes second metal layer, and the second metal layer is set to the organic contact layer and first gold medal
Belong between layer, the connecting hole is arranged in a staggered manner and is not connected with, described second in same level height with the second metal layer
Metal layer includes by transparent insulating film；
The peripheral edge of the organic contact layer is coated by insulation passivation, makes the region not being wrapped by the organic contact layer
Luminous zone is formed, the insulation passivation is or mixtures thereof one of silica, silicon nitride, photoresist；
The hearth electrode has recessed portion, and the protruding portion of the recessed portion and adjacent hearth electrode is mutually embedding.
2. silicon-based organic light-emitting device bottom electrode structural as described in claim 1, which is characterized in that the organic contact layer is in
Transparent or semitransparent state, and its thickness is no more than 50nm.
3. silicon-based organic light-emitting device bottom electrode structural as described in claim 1, which is characterized in that the transparent insulating film
Material is silicon oxide or silicon nitride, and thickness is no more than 2 μm.
4. silicon-based organic light-emitting device bottom electrode structural as described in claim 1, which is characterized in that the first metal layer and
The material of the second metal layer is Al or Ag, and thickness is not less than 50nm；The first metal layer and second metal layer it is upper
Edge and/or lower edge are coated with silicon substrate contact layer, and the material of the silicon substrate contact layer is Cr, Ti, Ta, Ni, W or its oxide
Or the mixture of the arbitrary proportion of nitride or above-mentioned material, and thickness is not more than 100nm.
5. silicon-based organic light-emitting device bottom electrode structural as described in claim 1, which is characterized in that connection first metal
The connecting hole of layer and the organic contact layer is arranged in the marginal position of the hearth electrode or corner location and protrudes from the hair
Light area.
6. silicon-based organic light-emitting device bottom electrode structural as described in claim 1, which is characterized in that the bottom on the connecting hole
Electrode section is coated by the insulation passivation.
7. such as the manufacturing method of silicon-based organic light-emitting device bottom electrode structural of the claim 1-6 as described in any one, feature
It is, comprising the following steps:
Step 1 grows the Metal Oxide Semiconductor Field Effect Transistor in the silicon base；
Step 2 grows the first metal layer above the Metal Oxide Semiconductor Field Effect Transistor；
Step 3, growth regulation silicon monoxide or silicon nitride layer above the first metal layer；
Step 4 makes the connecting hole in the first silicon oxide or silicon nitride layer；
Step 5 makes the organic contact layer above the first silicon oxide or silicon nitride layer；
Contain the second metal layer in the hearth electrode, then also include between step 3 and step 4:
Step 3.1 grows the second metal layer in the first silicon oxide or silicon nitride layer；
Step 3.2, growth regulation silica or silicon nitride layer in the second metal layer；
The first silicon oxide or silicon nitride layer and the second silicon oxide or silicon nitride layer form the transparent insulating film；
Contain the insulation passivation in the hearth electrode, then also include after step 5:
Step 5.1 makes the insulation passivation at the organic contact layer edge.
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| CN1934605A (en) * | 2004-03-17 | 2007-03-21 | 皇家飞利浦电子股份有限公司 | Electroluminescent display devices |
| KR20090003590A (en) * | 2007-07-03 | 2009-01-12 | 엘지디스플레이 주식회사 | Organic light emitting display device and method for fabricating of the same |
| TW201248966A (en) * | 2011-05-31 | 2012-12-01 | Seiko Epson Corp | Organic EL device |
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