CN102655118A - AMOLED (active matrix/organic light-emitting diode) device and production method - Google Patents

AMOLED (active matrix/organic light-emitting diode) device and production method Download PDF

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Publication number
CN102655118A
CN102655118A CN2012100063891A CN201210006389A CN102655118A CN 102655118 A CN102655118 A CN 102655118A CN 2012100063891 A CN2012100063891 A CN 2012100063891A CN 201210006389 A CN201210006389 A CN 201210006389A CN 102655118 A CN102655118 A CN 102655118A
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layer
pixel electrode
pixel
substrate
electrode
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李延钊
王刚
王东方
姜春生
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN2012100063891A priority Critical patent/CN102655118A/en
Publication of CN102655118A publication Critical patent/CN102655118A/en
Priority to PCT/CN2012/082718 priority patent/WO2013104202A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)

Abstract

The invention provides an AMOLED (active matrix/organic light-emitting diode) device and a production method, relating to the field of manufacturing for an active-type organic light-emitting diode device, and used for preparing an all-silicon-based AMOLED device, so as to decrease cost and increase output. The method comprises the following steps of: forming a polycrystalline silicon layer on a substrate; treating the polycrystalline silicon layer to form an active area and a pixel electrode area; forming a gate insulating layer on the active area; forming a gate electrode located on the gate insulating layer on the active area, on the substrate; performing doping process treatment on the active area and the pixel electrode area by taking the gate electrode as a mask, so as to enable the active area to form a source electrode area, an active layer, and a drain electrode area, and enable the pixel electrode area to form a pixel electrode layer; and forming an OLED device on a pixel defining layer corresponding to the pixel electrode layer via thin-film deposition process. The method provided by the invention is used for manufacturing an AMOLED device.

Description

A kind of AMOLED device and manufacture method
Technical field
The present invention relates to the manufacturing field of active organic electroluminescence device, relate in particular to a kind of AMOLED device and manufacture method.
Background technology
When active organic electroluminescence device (AMOLED) was made, traditional T FT switching device adopted amorphous silicon membrane as channel material, but the very low (＜1cm of the mobility of the intrinsic carrier of amorphous silicon 2V -1s -1); Thereby extensively adopt the higher silicon thin films of carrier mobility such as polysilicon and microcrystal silicon at present, and replace the channel material of amorphous silicon membrane as the TFT device, satisfy the requirement of the organic light emitting display that develops rapidly at present.
State in realization in the process of technical scheme; The inventor finds to exist at least in the prior art following problem: in making AMOLED device process, polysilicon membrane adopts the ITO material as the pixel electrode layer material just as the channel material of TFT device; Like this; The AMOLED device architecture needs depositing silicon and ITO double-layer films, and the photoetching of the line correlation of going forward side by side, etching technics have increased technological process and manufacturing cost.
Summary of the invention
Embodiments of the invention provide a kind of AMOLED device and manufacture method, are used to prepare the AMOLED device of total silicon base, and raising output reduces cost.
For achieving the above object, embodiments of the invention adopt following technical scheme:
On the one hand, the embodiment of the invention provides a kind of AMOLED manufacture method, comprising:
On the one side of substrate, form polysilicon layer;
Said polysilicon layer is carried out the composition PROCESS FOR TREATMENT, be formed with source region and pixel electrode district;
On said active area, form gate insulation layer through the composition PROCESS FOR TREATMENT;
On said substrate, form grid through the composition PROCESS FOR TREATMENT, wherein, said grid is positioned on the gate insulation layer on the said active area;
With said grid is that mask carries out the doping process processing to said active area and pixel electrode district, so that said active area forms source area, active layer, drain region, makes said pixel electrode district form pixel electrode layer; Form source electrode, drain electrode in source area, drain region through preparation source metal electrode and drain metal electrode;
Define formation OLED device on the layer through thin film deposition processes in the corresponding said pixel of said pixel electrode layer.
On the one hand, the embodiment of the invention provides a kind of AMOLED device, comprising:
Substrate;
Have source area, active layer, drain region and the pixel electrode layer that is connected with said drain region on the substrate, have source electrode, drain electrode that drain metal electrode and source metal electrode form on source area, the drain region respectively;
Be formed on the gate insulation layer on said source area, active layer, the drain region;
Be formed on the grid on the said gate insulation layer;
Be formed on the OLED device layer of said pixel electrode layer top.
The embodiment of the invention provides a kind of AMOLED device and manufacture method; Through on resilient coating, amorphous silicon material being prepared into polysilicon layer; And polysilicon layer utilized composition technology one time according to required figure, be formed with source region and pixel electrode district simultaneously, thereby prepare the AMOLED device of total silicon base; Thereby reduce composition technology, raising output reduces cost.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
The manufacturing process sketch map one of the AMOLED that Fig. 1 provides for the embodiment of the invention;
The manufacturing process sketch map two of the AMOLED that Fig. 2 provides for the embodiment of the invention;
The manufacturing process sketch map three of the AMOLED that Fig. 3 provides for the embodiment of the invention;
The manufacturing process sketch map four of the AMOLED that Fig. 4 provides for the embodiment of the invention
The manufacturing process sketch map five of the AMOLED that Fig. 5 provides for the embodiment of the invention;
The manufacturing process sketch map six of the AMOLED that Fig. 6 provides for the embodiment of the invention;
The manufacturing process sketch map seven of the AMOLED that Fig. 7 provides for the embodiment of the invention;
The manufacturing process sketch map eight of the AMOLED that Fig. 8 provides for the embodiment of the invention;
The manufacturing process sketch map nine of the AMOLED that Fig. 9 provides for the embodiment of the invention;
The structural representation of the AMOLED that completes that Figure 10 provides for the embodiment of the invention;
The another kind of structural representation of the AMOLED that completes that Figure 11 provides for the embodiment of the invention.
Reference numeral:
The 1-substrate, 2-resilient coating, 3-amorphous silicon layer, 30-polysilicon layer, 301-active area; 302-pixel electrode district, 31-source area, active layer, drain region, 32-pixel electrode layer (male or female), 4-gate insulation layer, 5-grid; The 6-source-drain electrode, the 7-passivation layer, the 8-pixel defines layer, 9-OLED device, 91-hole transmission layer; The 92-organic luminous layer, 93-electron transfer layer, 94-OLED top electrodes (printing opacity or semi-transparent negative electrode, anode), 10-metal reflective layer.
Embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
The embodiment of the invention provides above-mentioned AMOLED device manufacture method, comprising:
A1, on substrate 1, form polysilicon layer 30.
Further, in order to simplify technology, in this step, also comprise before the formation polysilicon layer 30: the deposition buffer layer thin film forms resilient coating 2 through composition technology on substrate 1; On said resilient coating 2, form amorphous silicon layer 3 through thin film deposition processes, said amorphous silicon layer 3 is carried out crystallization process handle formation polysilicon layer 30.
As shown in Figure 1, on substrate 1, adopt the CVD method to deposit the buffer thin film of 200nm, utilize thin film deposition processes to form resilient coating 2.Need to prove that said substrate can be the substrate of arbitrary forms such as transparency carrier, ceramic substrate, metal substrate, the present invention does not limit this.
As shown in Figure 2, on said substrate 1, form amorphous silicon layer 3 to cover said resilient coating 2.
Exemplary, adopt the thick amorphous silicon layer of CVD method deposition 50nm.Can deposit the amorphous silicon layer 3 between 5nm-500nm with said method, the present invention does not limit inferior yet.
As shown in Figure 3, with said amorphous silicon layer 3, in atmosphere of inert gases, carry out dehydrogenation, adopt PRK crystallization mode that amorphous silicon layer is carried out crystallization process afterwards and handle, obtain polysilicon layer 30.
A2, said polysilicon layer 30 is carried out the composition PROCESS FOR TREATMENT, be formed with source region 301 and pixel electrode district 302.
As shown in Figure 4, said polysilicon layer 30 is carried out photoetching, etching technics processing, is formed with source region 301 and pixel electrode district 302 according to required figure.
A3, as shown in Figure 5 forms gate insulation layer through depositing operation and composition PROCESS FOR TREATMENT on said active area.
Exemplary; As shown in Figure 5; Can utilize chemical vapor deposition method (Plasma Enhanced Chemical Vapor Deposition, PECVD) deposit thickness is the gate insulator 4 of 100nm to 150nm on active area, usually the material that uses of gate insulation layer 4 can be SiN xOr SiO 2Deng.
A4, on said substrate, form grid through depositing operation and composition PROCESS FOR TREATMENT, wherein, said grid is positioned on the gate insulation layer on the said active area.
Exemplary, as shown in Figure 6, can use magnetically controlled sputter method, the metal film layer of preparation one layer thickness 200nm on the substrate that is formed with gate insulation layer 1.Metal material can adopt metals such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper usually, also can use the combining structure of above-mentioned different materials film.Then, with mask through exposure, development, etching, the composition PROCESS FOR TREATMENT such as peel off, on certain zone of substrate 1, form grid 5.
A5, to be mask carry out doping process to said active area 301 and pixel electrode district 302 handles with said grid 5, so that said active area forms source area, active layer, drain region 31, makes said pixel electrode district form pixel electrode layer 32; Wherein, said grid 5, active layer 31, source area 31, drain region 31 constitute the TFT zone, and active layer is positioned at 31 of source-drain electrode areas.
Exemplary, as shown in Figure 7, be that mask carries out the doping process processing to said active area and pixel electrode district with said grid 5, form source-drain electrode area 31 and pixel electrode layer 32; Wherein, said active area and pixel electrode district are carried out the doping process processing, comprise and carry out p doping or n doping, the doping back polarity of formation pixel electrode layer accordingly is the source-drain electrode area 31 of male or female and thin-film transistor.
Concrete, be that mask carries out the p doping to polysilicon layer 3 or n mixes with said grid, and in quick anneal oven, carry out activation, form the source-drain electrode area 31 of thin-film transistor and the male or female of pixel electrode layer 32.Wherein, when polysilicon layer being carried out the p doping, the polarity of pixel electrode layer 32 is anode usually, and when polysilicon layer being carried out the n doping, the polarity of pixel electrode layer 32 is negative electrode usually.Need to prove that when polysilicon layer being carried out the p doping, the polarity of pixel electrode layer 32 also can be negative electrode, when polysilicon layer being carried out the n doping, the polarity of pixel electrode layer 32 also can be anode.But generally select the former for use, the present invention does not limit inferior.
A6, form source electrode 6, drain electrode 6 through preparation source metal electrode and drain metal electrode at source area, drain region; Wherein, said source-drain electrode 6 and grid 5 are positioned at on one deck and be positioned at grid 5 both sides, and drain electrode 6 is electrically connected with pixel electrode.
Exemplary, as shown in Figure 8, can use magnetically controlled sputter method, preparation layer of metal thin layer on the substrate that is formed with the grid metal level 1.Metal material can adopt metals such as molybdenum, aluminium, titanium, molybdenum and tungsten alloy, chromium or copper usually, also can use the combining structure of above-mentioned different materials film.Then, with mask through exposure, development, etching, the composition PROCESS FOR TREATMENT such as peel off, form source electrode 6, drain electrode 6 in source area, drain region through preparation source metal electrode and drain metal electrode; Wherein, said source-drain electrode 6 and grid 5 are positioned at on one deck and be positioned at grid 5 both sides, and drain electrode 6 is electrically connected with pixel electrode.
Further, in said grid 5, source electrode 6, drain electrode 6, be formed with passivation layer 7 through depositing operation.
Exemplary, show that like Fig. 9 adopt the method similar with gate insulator 4, deposition one layer thickness arrives the passivation layer 7 of 300nm at 200nm on said TFT zone, its material is SiNx or SiO normally 2Deng.
Further, on said passivation layer and said substrate, form pixel through composition technology and define layer.
Concrete, shown in figure 10, deposition acrylic based material or organic resin material and photoetching on passivation layer 7, solidify pixel and define layer 8; Wherein, pixel defines layer 8 thickness can be at 1um-2.5um, and preferred, its thickness can be 1.5um or 2um, and the present invention does not limit inferior.
A7, define in said pixel electrode layer 32 corresponding said pixels through thin film deposition processes and to form OLED device 9 on the layer 8.
Concrete; Shown in figure 10; Define formation OLED device 9 on the layer 8 in said pixel electrode layer 32 corresponding said pixels; Accordingly, utilize thin film deposition processes to form hole transmission layer 91, organic luminous layer 92, electron transfer layer 93, OLED top electrodes 94 (printing opacity or semi-transparent negative electrode, anode) successively, form OLED device 9.
Wherein, the corresponding said pixel of said pixel electrode layer define form OLED device 9 on the layer 8 before, need handle the surface of said polysilicon layer 30, improve the surface property of polysilicon layer 30 films.Wherein, but the processing of said polysilicon layer 30 using plasmas, like H 2, CF 4Deng, also can adopt liquid handling such as HCl, HF etc. also can adopt heat treatment such as annealing furnace annealing way etc., and polysilicon layer 30 is handled, and also can adopt other modes to handle, and the present invention does not limit this.Moreover, can also adopt the low thermal oxidation method, the surface of passivation polysilicon layer 30 is to strengthen its function as the device anode.
Optional, during preparation OLED part, can adopt following method 1, can be with organic material and cathodic metal thin layer thermal evaporation vapor deposition in OLED/EL-organic metal thin film deposition high vacuum system; At 1x10 -5Thermal evaporation vapor deposition hole transmission layer 91 (about 170 ℃), organic luminous layer 92 and electron transfer layer 93 (about 190 ℃) and transparent cathode 94 (about 900 ℃) successively under the vacuum of Pa; NPB (the N of the about 30-70 nanometer thickness of hole transmission layer 91 usefulness wherein; N '-diphenyl-N-N ' two (1-naphthyl)-1; 1 ' diphenyl-4,4 '-diamines); Electron transfer layer 93 unites two into one with organic luminous layer 92, with the oxine aluminium (AlQ) of about 30-70 nanometer thickness; Light tight negative electrode 94 adopts the LiF/Al layer, and the evaporation rate of LiF is 0.1nm/s, and thickness is 5-10nm; The Al layer thickness is 100-300nm.This AMOLED device green light (luminous peak position is 522nm), the bright dipping mode is end bright dipping.
Optional, during preparation OLED part, also can adopt following method 2, can deposit the V of 5-10nm earlier 2O 5As hole injection layer; Hole transmission layer 91 adopts the NPB (N, N '-diphenyl-N-N ' two (1-naphthyl)-1,1 ' diphenyl-4,4 '-diamines) of 50 nanometer thickness; Organic luminous layer 92 adopts and divides pixel region mask evaporation technology to carry out, and green glow, blue light and ruddiness pixel region adopt the thick CBP of material of main part 25nm of Doping Phosphorus luminescent material respectively: (ppy) 2Ir (acac), CBP:FIrpic and CBP:Btp 2Ir (acac); Electron transfer layer 93 adopts the Bphen of 25 nanometer thickness; The Sm/Al layer of about 200 nanometer thickness of light tight negative electrode 94 usefulness.This AMOLED device is a full-color light-emitting, and the bright dipping mode is end bright dipping.Need to prove, OLED top electrodes 94 in method 1 and the method 2, when pixel electrode layer carried out the p doping, the corresponding OLED top electrodes polarity that forms was negative electrode, concrete is lighttight reflective cathode in method 1,2.
Optional, during preparation OLED part, can also adopt following method 3, at the polysilicon pixel region that carries out doping of n type and activation, the metal M g of deposition 1-10nm thickness forms electron injecting layer, further reduces the surface work function of polycrystalline silicon membrane; Electron transfer layer 93, organic luminous layer 92 and hole transmission layer 91 are integrated, and adopt the spin coating mode to deposit MEH-PPV (gather [2-methoxyl group-5-(2-ethyl hexyl oxy)-1, the support of 4-phenylene ethylene), about 80nm; Anode 94 adopts V 2O 5/ Au layer, V 2O 5Layer thickness is 5-10nm; The evaporation rate of Au is 1nm/min, and thickness is 15-30nm.This AMOLED device glows (luminous peak position is 565nm), and the bright dipping mode is for ejecting light.Need to prove that OLED top electrodes 94 in the method 3 carries out n when mixing at pixel electrode layer, the corresponding OLED top electrodes polarity that forms be anode concrete in method 3, be the printing opacity anode.
Concrete, as can the Doping Phosphorus luminescent material in the organic luminous layer 92 in method 1,2 or 3, other materials etc. also can mix.The present invention does not limit this, and wherein, said AMOLED device can form monochromatic AMOLED, full-color AMOLED according to the difference of organic luminous layer 92 materials; Wherein, monochromatic AMOLED can be monochromatic light such as green glow, ruddiness, blue light; Panchromatic is the combination of ruddiness, blue light, green glow.
Further; Form hole injection layer or electron injecting layer between layer and OLED device as before forming hole transmission layer 91, utilizing thin film deposition processes to define in method 2 or 3 in pixel; Also can add electronic barrier layer, hole blocking layer etc., wherein, hole injection layer can adopt V 2O 5Make, can make with other materials yet, the present invention does not limit this, and is concrete, and hole injection layer is positioned at the lower floor of hole transmission layer 91, and electron injecting layer is positioned at 94 of electron transfer layer 93 and OLED top electrodes.
Need to prove; In the manufacturing process of OLED device 9, the embodiment of the invention has adopted small molecule material as each organic layer structure, and embodiment 3 has adopted the appearance of macromolecule polyalcohol as organic layer; But the present invention is not limited to this, the material that also can adopt other to be fit to.Example)
Further, shown in figure 11, at the metal formation metallic reflector 10 of the regional offside coating 150～300nm of the TFT of said substrate 1.
Concrete, to the thick metal A l of 300nm, form metallic reflector 10 at substrate back vapor deposition 150nm, wherein, realize that through forming metallic reflector 10 top layer in the AMOLED device OLED device method 3 is luminous.
The embodiment of the invention provides a kind of AMOLED manufacturing approach; Through on resilient coating, amorphous silicon material being prepared into polysilicon layer; And polysilicon layer utilized composition technology one time according to required figure, thus be formed with the AMOLED device that source region and pixel electrode district prepare the total silicon base simultaneously, reduced the composition technology of AMOLED element manufacturing; Reduce cost of manufacture, improved output.
The embodiment of the invention provides a kind of AMOLED device, and is shown in figure 10, comprising: substrate 1; Have source area 31, active layer 31, drain region 31 and the pixel electrode layer 32 that is connected with said drain region on the substrate 1, have source electrode 6, drain electrode 6 that drain metal electrode and source metal electrode form on source area 31, the drain region 31 respectively; Be formed on the gate insulation layer 4 on source area 31, active layer 31, the drain region 31; Be formed on grid 5 on the gate insulation layer 4, be formed on pixel electrode layer 32 tops and form OLED device layer 9.
Here, the material of said source area 31, semiconductor active layer 31, drain region 31, pixel electrode layer 32 is the polycrystalline silicon material of same prepared.Like this in the source area, active layer, the drain region 31 that make AMOLED; Just can in a composition technology, form source area 31, active layer 31, drain region 31 and pixel electrode layer 32 during pixel electrode layer 32; So just can reduce composition technology, thereby reduce cost, improve output.
Further, said AMOLED device also comprises: define layer 8 at the resilient coating 2 between said substrate 1 and said source area, active layer, drain region 31 and the pixel electrode layer 32 and in the pixel between 9 layers of said pixel electrode layer 32 and the OLED devices.Wherein, said pixel defines layer and 8 is positioned on the whole base plate 1.
Further, said OLED device layer comprises: hole injection layer, hole transmission layer 91, luminescent layer 92, electron transfer layer 93, electron injecting layer, OLED top electrodes 94, wherein, hole injection layer can adopt V 2O 5Make, can make with other materials yet, the present invention does not limit this, and is concrete, and hole injection layer is positioned at the lower floor of hole transmission layer 91, and electron injecting layer is positioned at 94 of electron transfer layer 93 and OLED top electrodes.
Further, shown in figure 11, on the opposite side in the formation TFT of said substrate 1 zone, be formed with the metallic reflector 10 of 150～300nm.
Concrete, through on the opposite side in the formation TFT zone of said substrate 1, be formed with the metallic reflector 10 of 150～300nm, utilize metallic reflector 10 to realize the light that ejects of AMOLED device.
The embodiment of the invention provides a kind of AMOLED device; Through on resilient coating, amorphous silicon material being prepared into polysilicon layer, and polysilicon layer is utilized composition technology one time according to required figure, be formed with source region and pixel electrode district simultaneously; Thereby prepare the AMOLED device of total silicon base; Reduce the composition technology of AMOLED element manufacturing, reduced cost of manufacture, improved output.
The above; Be merely embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; Can expect easily changing or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of said claim.

Claims (11)

1. the manufacture method of an AMOLED device is characterized in that, comprising:
On the one side of substrate, form polysilicon layer;
Said polysilicon layer is carried out the composition PROCESS FOR TREATMENT, be formed with source region and pixel electrode district;
On said active area, form gate insulation layer through the composition PROCESS FOR TREATMENT;
On said gate insulation layer, form grid through the composition PROCESS FOR TREATMENT, wherein, said grid is positioned on the gate insulation layer on the said active area;
With said grid is that mask carries out the doping process processing to said active area and pixel electrode district, so that said active area forms source area, active layer, drain region, makes said pixel electrode district form pixel electrode layer;
Form source electrode, drain electrode in source area, drain region through preparation source metal electrode and drain metal electrode;
Define formation OLED device on the layer through thin film deposition processes in the corresponding said pixel of said pixel electrode layer.
2. manufacture method according to claim 1 is characterized in that, on said substrate, forms polysilicon layer and also comprises before: on substrate, deposit buffer layer thin film, and form resilient coating through composition technology;
The said polysilicon layer that on substrate, forms comprises:
On said resilient coating, form amorphous silicon layer through thin film deposition processes;
Said amorphous silicon layer is carried out crystallization process handle the formation polysilicon layer.
3. manufacture method according to claim 1 is characterized in that, said active area and pixel electrode district is carried out doping process handle and comprise:
Said active area and pixel electrode district are carried out p doping or the processing of n doping process.
4. manufacture method according to claim 1 is characterized in that, said method also comprises:
In said grid, source electrode, drain electrode, be formed with passivation layer through depositing operation;
On said passivation layer and said pixel electrode layer, form pixel through composition technology and define layer.
5. according to the arbitrary described manufacture method of claim 1 to 4, it is characterized in that, define the OLED device that forms on the layer in the corresponding said pixel of said pixel electrode layer and comprise:
Define and make hole transmission layer on the layer being formed with the corresponding said pixel of said pixel electrode layer;
On said hole transmission layer, form luminescent layer;
On said luminescent layer, form electron transfer layer;
On said electron transfer layer, make the OLED top electrodes.
6. manufacture method according to claim 5; It is characterized in that, define the OLED device that forms on the layer in the corresponding said pixel of said pixel electrode layer and also comprise: making before the hole transmission layer to define and making hole injection layer on the layer in the corresponding said pixel of said pixel electrode layer;
When making the OLED top electrodes, on electron transfer layer, make electron injecting layer.
7. according to claim 1 to 4,6 arbitrary described manufacture methods, it is characterized in that, also comprise:
On the another side of said substrate, be coated with reflective metal layer.
8. an AMOLED device is characterized in that, comprising:
Substrate;
Have source area, active layer, drain region and the pixel electrode layer that is connected with said drain region on the substrate, have source electrode, drain electrode that source metal electrode and drain metal electrode form on source area, the drain region respectively;
Be formed on the gate insulation layer on said source area, active layer, the drain region;
Be formed on the grid on the said gate insulation layer;
Be formed on the OLED device layer of said pixel electrode layer top.
9. AMOLED device according to claim 8 is characterized in that,
Between said substrate and said source area, active layer, drain region and pixel electrode layer, also comprise resilient coating;
Between said pixel electrode layer and OLED device layer, comprise that also pixel defines layer.
10. AMOLED device according to claim 8 is characterized in that, said OLED device layer comprises: hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, OLED top electrodes.
11. AMOLED device according to claim 8 is characterized in that,
On the another side of said substrate, be formed with metallic reflector.
CN2012100063891A 2012-01-10 2012-01-10 AMOLED (active matrix/organic light-emitting diode) device and production method Pending CN102655118A (en)

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CN112038288B (en) * 2020-11-04 2021-02-02 成都中电熊猫显示科技有限公司 Manufacturing method of array substrate and array substrate

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