CN107331754A - A kind of light-emitting diode chip for backlight unit - Google Patents
A kind of light-emitting diode chip for backlight unit Download PDFInfo
- Publication number
- CN107331754A CN107331754A CN201710574308.0A CN201710574308A CN107331754A CN 107331754 A CN107331754 A CN 107331754A CN 201710574308 A CN201710574308 A CN 201710574308A CN 107331754 A CN107331754 A CN 107331754A
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- CN
- China
- Prior art keywords
- chip body
- type electrode
- type
- oxide film
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
Abstract
The invention discloses a kind of light-emitting diode chip for backlight unit, including chip body, chip body includes substrate, epitaxial layer is provided with the substrate layer, epitaxial layer is provided with N, P-type conduction area, in N, active area is provided between P-type conduction area, insulating barrier is provided with N-type conduction region and active area side, on the right side of insulating barrier conductive transparent oxide film layer is equipped with N-type conduction region upper surface, conductive transparent oxide film layer is provided with P-type electrode, conductive transparent oxide film layer is provided with N-type electrode, the side of chip body is provided with isolation P-type electrode and chip body, the insulating barrier of N-type electrode and chip body, chip body lower end is fixed on insulated heat fixed plate, insulated heat fixed plate is provided with pin leadout hole, chip body both sides are provided with several pins, the pin of the chip body left and right sides is arranged on respectively at N, P-type electrode is connected.The present invention is simple in construction, reasonable in design, and cost is low, and service life is long, can avoid being influenceed by other electronic components.
Description
Technical field
The present invention relates to chip, specifically a kind of light-emitting diode chip for backlight unit.
Background technology
Current light emitting diode chip is installed can be influenceed by other electronic components in circuit in circuit, its in circuit
The heat that his electronic component is distributed can raise the temperature of light emitting diode chip, influence the use longevity of light-emitting diode chip for backlight unit
Life.
The content of the invention
In order to solve the above problems, the invention provides it is a kind of can not be influenceed by other electronic component generations luminous two
Pole pipe chip.
In order to achieve the above object, the present invention is achieved through the following technical solutions：
The present invention is a kind of light-emitting diode chip for backlight unit, including chip body, and chip body includes substrate, is provided with the substrate layer
N-type conduction region and P-type conduction area are provided with epitaxial layer, epitaxial layer, has been provided between N-type conduction region and P-type conduction area
Source region, is provided with insulating barrier in N-type conduction region and active area side, conduction is provided with the P-type conduction area on the right side of insulating barrier
Transparent oxide film layer, P-type electrode is provided with conductive transparent oxide film layer, is set in N-type conduction region upper surface
There is conductive transparent oxide film layer, N-type electrode is provided with conductive transparent oxide film layer, in the side of chip body
Isolation P-type electrode and the insulating barrier of chip body, N-type electrode and chip body are provided with, chip body lower end is fixed on insulation
Heat-insulated fixed plate, is provided with pin leadout hole in insulated heat fixed plate, and chip body both sides are provided with several pins, if
The pin in the chip body left and right sides is put respectively at N-type electrode with P-type electrode to be connected.
Further improvement of the present invention is：Insulated heat fixed plate be ceramic fibre thin plate, phlogopite thin plate it is any
One or two kinds of adhesion into thin plate.
Further improvement of the present invention is：The thickness of insulated heat fixed plate is 1-2 millimeters.
Further improvement of the present invention is：In substrate lower end, several downwardly projecting fixed salient points are set, insulation every
Thermosetting fixed board upper surface is provided with the several recesses for clasping several fixed salient points.The beneficial effects of the invention are as follows：Avoid in circuit
The heating of other electronic components produces influence to chip, extends the service life of the present invention.
The present invention is simple in construction, reasonable in design, and cost is low, and service life is long, can avoid by other electronic component shadows
Ring.
Brief description of the drawings
Fig. 1 is schematic structural view of the invention.
Wherein：1- substrates, 2- epitaxial layers, 3-N type conduction regions, 4-P type conduction regions, 5- active areas, the oxidation of 6- conductive, transparents
Thing film layer, 7-P type electrodes, 8-N type electrodes, 9- insulated heat fixed plates.
Embodiment
In order to strengthen the understanding of the present invention, present invention work is further retouched in detail below in conjunction with drawings and examples
State, the embodiment is only used for explaining the present invention, protection scope of the present invention is not constituted and limited.
As shown in figure 1, the present invention is a kind of light-emitting diode chip for backlight unit, including chip body, chip body include substrate 1,
It is provided with 1 layer of substrate on epitaxial layer 2, epitaxial layer 2 and is provided with N-type conduction region 3 and P-type conduction area 4, in the He of N-type conduction region 3
Active area 5 is provided between P-type conduction area 4, N-type conduction region 3 and the side of active area 5 are provided with insulating barrier, it is right in insulating barrier
Conductive transparent oxide film layer 6 is provided with the P-type conduction area 4 of side, P is provided with conductive transparent oxide film layer 6
Type electrode 7, is provided with conductive transparent oxide film layer 6, in conductive transparent oxide film layer 6 in the upper surface of N-type conduction region 3
On be provided with N-type electrode 8, isolation P-type electrode 7 and chip body, N-type electrode 8 and chip are provided with the side of chip body
The insulating barrier of body, chip body lower end is fixed on insulated heat fixed plate 9, and pin is provided with insulated heat fixed plate 9
Leadout hole, several pins are provided with chip body both sides, are arranged on the pin of the chip body left and right sides respectively at N-type electrode
8 are connected with P-type electrode 7, and insulated heat fixed plate 9 is viscous for any one or two kinds of ceramic fibre thin plate, phlogopite thin plate
The thin plate being linked to be, the thickness of insulated heat fixed plate 9 is 1-2 millimeters, sets several downwardly projecting fixations convex in the lower end of substrate 1
Point, the several recesses for clasping several fixed salient points are provided with the upper surface of insulated heat fixed plate 9.
The present invention is simple in construction, reasonable in design, and cost is low, and service life is long, can avoid by other electronic component shadows
Ring.
Claims (4)
1. a kind of light-emitting diode chip for backlight unit, including chip body, it is characterised in that：The chip body includes substrate（1）, institute
State substrate（1）Epitaxial layer is provided with layer（2）, the epitaxial layer（2）On be provided with N-type conduction region（3）With P-type conduction area（4）,
In the N-type conduction region（3）With the P-type conduction area（4）Between be provided with active area（5）, in the N-type conduction region（3）With
The active area（5）Side is provided with insulating barrier, the P-type conduction area on the right side of the insulating barrier（4）On be provided with conduction
Transparent oxide film layer（6）, in the conductive transparent oxide film layer（6）On be provided with P-type electrode（7）, in the N-type
Conduction region（3）Upper surface is provided with conductive transparent oxide film layer（6）, in the conductive transparent oxide film layer（6）On
It is provided with N-type electrode（8）, the isolation P-type electrode is provided with the side of the chip body（7）With chip body, the N
Type electrode（8）With the insulating barrier of the chip body, the chip body lower end is fixed on insulated heat fixed plate（9）, institute
State insulated heat fixed plate（9）On be provided with pin leadout hole, the chip body both sides are provided with several pins, are arranged on
The pin of the chip body left and right sides is respectively at the N-type electrode（8）And P-type electrode（7）It is connected.
2. a kind of light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：The insulated heat fixed plate（9）For
Any one or two kinds of adhesions of ceramic fibre thin plate, phlogopite thin plate into thin plate.
3. a kind of light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：The insulated heat fixed plate（9）'s
Thickness is 1-2 millimeters.
4. a kind of light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：In the substrate（1）Lower end sets number
Individual downwardly projecting fixed salient point, in the insulated heat fixed plate（9）Upper surface, which is provided with, clasps several fixed salient points
Several recesses.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710574308.0A CN107331754B (en) | 2017-07-14 | 2017-07-14 | A kind of light-emitting diode chip for backlight unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710574308.0A CN107331754B (en) | 2017-07-14 | 2017-07-14 | A kind of light-emitting diode chip for backlight unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107331754A true CN107331754A (en) | 2017-11-07 |
| CN107331754B CN107331754B (en) | 2019-10-25 |
Family
ID=60226987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710574308.0A Active CN107331754B (en) | 2017-07-14 | 2017-07-14 | A kind of light-emitting diode chip for backlight unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107331754B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201093263Y (en) * | 2007-09-04 | 2008-07-30 | 蔡建平 | Heat radiation type LED road lamp |
| CN101975340A (en) * | 2010-08-06 | 2011-02-16 | 敬俊 | Packaging structure of luminous semiconductor chip and packaging method thereof |
| CN104602445A (en) * | 2015-02-06 | 2015-05-06 | 长沙信元电子科技有限公司 | Straight-plug terminal applicable to aluminum-base circuit board |
-
2017
- 2017-07-14 CN CN201710574308.0A patent/CN107331754B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201093263Y (en) * | 2007-09-04 | 2008-07-30 | 蔡建平 | Heat radiation type LED road lamp |
| CN101975340A (en) * | 2010-08-06 | 2011-02-16 | 敬俊 | Packaging structure of luminous semiconductor chip and packaging method thereof |
| CN104602445A (en) * | 2015-02-06 | 2015-05-06 | 长沙信元电子科技有限公司 | Straight-plug terminal applicable to aluminum-base circuit board |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107331754B (en) | 2019-10-25 |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 226600, Jiangsu province Nantong city Haian county old dam Town Industrial Park Applicant after: Jiangsu Ming core microelectronic Limited by Share Ltd Address before: 226600 Jiangsu city of Nantong province Haian County Binhai port old dam old dam District Town Industrial Park Applicant before: Nantong Mingxin Microelectronics Co., Ltd. |
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| GR01 | Patent grant |