CN107329070A - A kind of method of junction temperature during fast estimator part hot operation - Google Patents
A kind of method of junction temperature during fast estimator part hot operation Download PDFInfo
- Publication number
- CN107329070A CN107329070A CN201710432208.4A CN201710432208A CN107329070A CN 107329070 A CN107329070 A CN 107329070A CN 201710432208 A CN201710432208 A CN 201710432208A CN 107329070 A CN107329070 A CN 107329070A
- Authority
- CN
- China
- Prior art keywords
- temperature
- junction temperature
- log
- environment
- now
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The invention discloses a kind of method of junction temperature during fast estimator part hot operation, comprise the following steps：Step S1, enough time in a certain environment temperature T1 is placed on by device, so that device chip temperature is identical with environment temperature, now measures device creepage IRT1；Step S2, is placed on continuous firing enough time in hot environment, the temperature range of the hot environment is 75 DEG C to 150 DEG C, after in stable condition by device, i.e., after leakage current stabilization, measure leakage current IR nowT2, now the temperature T2 of chip is junction temperature TJ；Step S3, according to formula IRT2=IR(T1)* { 2^ [(T2 T1)/10] }, can release TJ=T2=a*10+T1, wherein a=log2 IR T2‑log2 IR T1；The method that the present invention puies forward junction temperature when encircleing a kind of fast estimator part hot operation, it can quickly estimate device junction temperature, and be conducive to finding out the rule of higher device temperature electric leakage.
Description
Technical field
The present invention relates to a kind of method of junction temperature during fast estimator part hot operation, belong to technical field of temperature measurement.
Background technology
, it is necessary to ensure that device disclosure satisfy that electrical requirements under maximum junction temperature during semiconductor reliability experiment.But device
During continuous firing, it is impossible to direct measurement device junction temperature, therefore it is difficult to judge whether reliability test reaches requirement.Continue a kind of energy
The method of enough quick estimation junction temperatures.
The content of the invention
The technical problems to be solved by the invention are：Overcome the deficiencies in the prior art, carry a kind of fast estimator part of arch high
The method of junction temperature during temperature work, it can quickly estimate device junction temperature, and be conducive to finding out the rule of higher device temperature electric leakage.
In order to solve the above-mentioned technical problem, the technical scheme is that：Tied during a kind of fast estimator part hot operation
The method of temperature, comprises the following steps：Step S1, enough time in a certain environment temperature T1 is placed on by device, so that device core
Piece temperature is identical with environment temperature, now measures device creepage IRT1；Step S2, device is placed in hot environment and continued
Work enough time, and the temperature range of the hot environment is 75 DEG C to 150 DEG C, after in stable condition, i.e., after leakage current stabilization,
Measure leakage current IR nowT2, now the temperature T2 of chip is junction temperature TJ；Step S3, according to formula IRT2=IR(T1)*{2^
[(T2-T1)/10] }, TJ=T2=a*10+T1, wherein a=log can be released2 IR T2-log2 IR T1。
Further, in the step S2, device, which is placed in hot environment, at least to work 3 hours.
Further, in addition to step S4, programmed according to formula TJ=T2=a*10+T1, input T1, IRT1、IRT2, you can
Draw junction temperature TJ, wherein a=log2 IR T2-log2 IR T1。
Above-mentioned technical proposal is employed, the present invention has following beneficial effect：
1st, when the present invention often raises 10 DEG C according to the operating temperature of device, leakage current amplifies about one times of rule, by inciting somebody to action
Device is placed in two different temperature, and the method for measuring the leakage current of device calculates junction temperature；
2nd, the present invention can find out higher device temperature electric leakage rule, by under high temperature calculate junction temperature formula write-in program in,
Calculated using program, estimate rapidly device work when junction temperature, computational methods simple and fast, efficiently；
3rd, the present invention can also reversely verify the degree of accuracy of junction temperature, when having surveyed certain temperature and temperature gap to be measured is smaller, valuation
It is more accurate.
Brief description of the drawings
Fig. 1 is the present invention according to high-temperature current leakage IR(T2)Obtain junction temperature TJ software flow pattern；
Fig. 2 obtains high-temperature current leakage IR for the present invention according to junction temperature T2(T2)Software flow pattern.
Embodiment
In order that present disclosure is easier to be clearly understood, it is right below according to specific embodiment and with reference to accompanying drawing
The present invention is described in further detail.
The method of junction temperature, comprises the following steps during a kind of fast estimator part hot operation：
Step S1, enough time in a certain environment temperature T1 is placed on by device, so that device chip temperature and environment temperature
Degree is identical, and now leakage current is stable, now measures device creepage IRT1；
Step S2, continuous firing enough time in hot environment, the temperature range of the hot environment are placed on by device
For 75 DEG C to 150 DEG C, after in stable condition, i.e., after leakage current stabilization, leakage current IR now is measuredT2, the now temperature of chip
T2 is junction temperature TJ；
Step S3, according to formula IRT2=IR(T1)* { 2^ [(T2-T1)/10] }, can release TJ=T2=a*10+T1,
Wherein a=log2 IR T2-log2 IR T1。
The present invention according to the operating temperature of device when often raising 10 DEG C, and leakage current amplifies about one times of rule, by by device
Part is placed in two different temperature, and the method for measuring the leakage current of device calculates junction temperature TJ.
In order to ensure device reaches stable state, also allow for manually being operated, in the step S2, device is placed on height
At least worked in warm environment 3 hours.
The method of junction temperature also includes step S4 during the fast estimator part hot operation, according to formula TJ=T2=a*10
+ T1 is programmed, and inputs T1, IRT1、IRT2, you can draw junction temperature TJ, wherein a=log2 IR T2-log2 IR T1。
The present invention can find out the rule of higher device temperature electric leakage, by the formula write-in program that junction temperature is calculated under high temperature, make
Calculated with program, estimate rapidly device work when junction temperature, computational methods simple and fast, efficiently.
The present invention can also reversely verify the degree of accuracy of junction temperature, and when having surveyed certain temperature and temperature gap to be measured is smaller, valuation is got over
Accurately.
Particular embodiments described above, pair present invention solves the technical problem that, technical scheme and beneficial effect carry out
It is further described, should be understood that the specific embodiment that the foregoing is only the present invention, is not limited to this
Invention, within the spirit and principles of the invention, any modification, equivalent substitution and improvements done etc. should be included in this hair
Within bright protection domain.
Claims (3)
1. a kind of method of junction temperature during fast estimator part hot operation, it is characterised in that comprise the following steps：
Step S1, enough time in a certain environment temperature T1 is placed on by device, so that device chip temperature and environment temperature phase
Together, device creepage IR is now measuredT1；
Step S2, is placed on continuous firing enough time in hot environment, the temperature range of the hot environment is 75 by device
DEG C to 150 DEG C, after in stable condition, i.e., leakage current it is stable after, measure leakage current IR nowT2, now the temperature T2 of chip be
It is junction temperature TJ；
Step S3, according to formula IRT2=IR(T1)* { 2^ [(T2-T1)/10] }, can release TJ=T2=a*10+T1,
Wherein a=log2 IR T2-log2 IR T1。
2. the method for junction temperature during a kind of fast estimator part hot operation according to claim 1, it is characterised in that：It is described
In step S2, device, which is placed in hot environment, at least to work 3 hours.
3. the method for junction temperature during a kind of fast estimator part hot operation according to claim 1 or 2, it is characterised in that：
Also include step S4, programmed according to formula TJ=T2=a*10+T1, input T1, IRT1、IRT2, you can draw junction temperature TJ, wherein a
=log2 IR T2-log2 IR T1。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710432208.4A CN107329070B (en) | 2017-06-09 | 2017-06-09 | A kind of method of junction temperature when fast estimator part hot operation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710432208.4A CN107329070B (en) | 2017-06-09 | 2017-06-09 | A kind of method of junction temperature when fast estimator part hot operation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107329070A true CN107329070A (en) | 2017-11-07 |
| CN107329070B CN107329070B (en) | 2019-07-19 |
Family
ID=60194677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710432208.4A Active CN107329070B (en) | 2017-06-09 | 2017-06-09 | A kind of method of junction temperature when fast estimator part hot operation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107329070B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111983415A (en) * | 2020-08-20 | 2020-11-24 | 湖南大学 | Power device junction temperature on-line measuring system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1049755A1 (en) * | 1979-11-13 | 1983-10-23 | Таллинский Политехнический Институт | Process for measuring thermal spike of p-n junction |
| CN101266280A (en) * | 2008-05-13 | 2008-09-17 | 上海大学 | High power light-emitting diode heat resistance and junction temperature test system |
| CN102608511A (en) * | 2012-03-08 | 2012-07-25 | 东南大学 | Method for measuring junction temperature and thermal resistance of metal-oxide semiconductor tube |
| FR2944876B1 (en) * | 2009-04-27 | 2012-12-28 | Peugeot Citroen Automobiles Sa | METHOD AND SYSTEM FOR QUANTIFYING COMPONENT JUNCTION TEMPERATURE. |
| CN105353289A (en) * | 2015-10-22 | 2016-02-24 | 江苏新广联半导体有限公司 | LED chip junction temperature testing method |
-
2017
- 2017-06-09 CN CN201710432208.4A patent/CN107329070B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1049755A1 (en) * | 1979-11-13 | 1983-10-23 | Таллинский Политехнический Институт | Process for measuring thermal spike of p-n junction |
| CN101266280A (en) * | 2008-05-13 | 2008-09-17 | 上海大学 | High power light-emitting diode heat resistance and junction temperature test system |
| FR2944876B1 (en) * | 2009-04-27 | 2012-12-28 | Peugeot Citroen Automobiles Sa | METHOD AND SYSTEM FOR QUANTIFYING COMPONENT JUNCTION TEMPERATURE. |
| CN102608511A (en) * | 2012-03-08 | 2012-07-25 | 东南大学 | Method for measuring junction temperature and thermal resistance of metal-oxide semiconductor tube |
| CN105353289A (en) * | 2015-10-22 | 2016-02-24 | 江苏新广联半导体有限公司 | LED chip junction temperature testing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111983415A (en) * | 2020-08-20 | 2020-11-24 | 湖南大学 | Power device junction temperature on-line measuring system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107329070B (en) | 2019-07-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101601363B1 (en) | Apparatus and method for power cycle test | |
| CN103822731B (en) | A kind of method of testing of VDMOS device junction temperature | |
| CN107783022A (en) | The thermal reliability appraisal procedure of HEMT | |
| EP2573531A3 (en) | Threshold-based temperature-dependent power/thermal management with temperature sensor calibration | |
| CN107609308B (en) | Method and device for measuring equivalent resistance at connecting pipe of cable joint | |
| CN105335269B (en) | Temprature control method, device and mobile terminal | |
| CN111060798B (en) | Automatic power aging test system and test method for MOS (metal oxide semiconductor) tube | |
| CN104330636A (en) | Method for inferring internal DC resistance of lithium ion battery | |
| WO2013009689A8 (en) | Temperature measurement of active device under test on strip tester | |
| CN107329070A (en) | A kind of method of junction temperature during fast estimator part hot operation | |
| CN105097420B (en) | A kind of method of temperature correction for MASSON fast bench heat treaters | |
| CN106092349A (en) | A kind of expanding temperature measuring pawl | |
| CN106197721B (en) | The method and apparatus of wafer temperature detection and the processing of IGBT module temperature detection | |
| CN105527596B (en) | A kind of wafer acceptance testing board pressurization calibration method | |
| CN104048992A (en) | Device for measuring thermal resistance from bottom shell of semiconductor device to air under thermal coupling effect | |
| CN104201125A (en) | Measuring method for hot-pressing product temperature curve | |
| CN104316222B (en) | A kind of method for fast measuring of transformer thermometer ambient temperature effect amount | |
| CN109579998B (en) | Detection method for contact resistance of photovoltaic connector | |
| CN102184877A (en) | Method for measuring temperature by using thermal wave meter | |
| TWI648543B (en) | Rated current testing device | |
| JP6620610B2 (en) | Method for estimating surface heat flux of heat-treated members | |
| CN206683796U (en) | A kind of armoured thermocouple time constant measuring device | |
| CN103499782A (en) | Method for measuring vertical double-diffusion MOSFET | |
| CN102735889A (en) | Probe circuit | |
| CN101562145B (en) | Method for improving wafer-stage electromigration performance test |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |