CN107317633A - A kind of optical sender based on infrared LED - Google Patents
A kind of optical sender based on infrared LED Download PDFInfo
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- CN107317633A CN107317633A CN201710346430.2A CN201710346430A CN107317633A CN 107317633 A CN107317633 A CN 107317633A CN 201710346430 A CN201710346430 A CN 201710346430A CN 107317633 A CN107317633 A CN 107317633A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 33
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000002648 laminated material Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 9
- 238000005499 laser crystallization Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/502—LED transmitters
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to a kind of optical sender based on infrared LED, it is characterised in that including：Input, encoder, signal adapter, drive circuit, infrared LED light source and output end；Wherein, the input, the encoder, the signal adapter, the drive circuit, the infrared LED light source and the output end are connected in series to form transmission link successively.The present invention replaces laser as the light source of optical sender with infrared LED, influence of the temperature to light source light-emitting efficiency is reduced, so as to simplify circuit design.
Description
Technical Field
The invention belongs to the technical field of optical communication, and particularly relates to an optical transmitter based on an infrared LED.
Background
The optical transmitter functions to convert an electrical signal carrying information into an optical signal and to feed the optical signal into an optical fiber, i.e., the optical transmitter functions to convert the HDB3 signal transmitted from the multiplexing device into an NRZ code, then to encode the NRZ code into a code pattern suitable for transmission over an optical cable, and finally to perform electrical/optical conversion to convert the electrical signal into an optical signal and to couple it into an optical fiber. Therefore, the development of optical fiber communication technology is inseparable from the development of light source technology.
At present, the light source of the commonly used optical transmitter is a laser light source, which is an ideal light source for high-speed modulation, but the problem is inevitable. On one hand, a semiconductor laser emitting laser is very sensitive to temperature change, and instability is brought to the laser by the temperature change and the aging of devices, so that the output power is greatly changed; on the other hand, the semiconductor laser has a short service life and high maintenance cost. Therefore, in many short-distance and low-speed communication fields, a light emitting diode can be used as a light source of an optical transmitter instead of a semiconductor laser. However, the conventional light emitting diode has a problem of low light emitting efficiency, thereby greatly limiting its application in the communication field.
Therefore, it becomes extremely important how to design an optical transmitter based on an infrared LED light source.
Disclosure of Invention
In order to solve the above technical problem, the present invention provides an infrared LED-based optical transmitter, comprising: the device comprises an input end, an encoder, a signal converter, a driving circuit, an infrared LED light source and an output end; wherein,
the input end, the encoder, the signal converter, the driving circuit, the infrared LED light source and the output end are sequentially connected in series to form a transmission link.
In one embodiment of the invention, the encoder is an 8B/10B encoder.
In one embodiment of the invention, the signal converter is a D/a converter.
In one embodiment of the present invention, the infrared LED light source includes:
a base;
the lead frame is fixed on the base;
the substrate is arranged on the base;
a semiconductor chip disposed on the substrate;
a lead connecting the lead frame and the semiconductor chip;
a lens disposed on the base;
and the epoxy resin is filled in a space formed by the base and the lens.
In one embodiment of the present invention, the semiconductor chip is a vertical structure semiconductor chip, including:
a Si substrate;
the PiN step structure formed by the Si and Ge laminated materials is arranged at the central position of the surface of the Si substrate;
the positive electrode is arranged on the upper surface of the Pin step structure;
and the negative electrode is arranged on the upper surface of the Si substrate and is positioned at the positions on two sides of the Pin step structure so as to form the semiconductor chip.
In an embodiment of the invention, the PiN step structure sequentially comprises an N-type Si epitaxial layer, a tensile strained Ge layer and a P-type Ge layer, and the N-type Si epitaxial layer, the tensile strained Ge layer and the P-type Ge layer form a PiN structure.
In one embodiment of the present invention, the tensile strained Ge layer comprises a crystallized Ge layer and a Ge epilayer.
In one embodiment of the invention, the Ge epitaxial layer is an intrinsic Ge material and has a thickness of 400-450 nm.
In an embodiment of the invention, the optical transmitter further includes a passivation layer, and the semiconductor chip passivation layer is disposed on the upper surfaces of the Si substrate and the PiN structure and is used for isolating the positive electrode and the negative electrode.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, the infrared LED replaces a laser to be used as a light source of the optical transmitter, so that on one hand, the service life of the equipment is greatly prolonged, and the maintenance cost is reduced; on the other hand, the influence of temperature on the luminous efficiency of the light source is reduced, and therefore the circuit design is simplified.
Drawings
The following detailed description of embodiments of the invention will be made with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an infrared LED-based optical transmitter according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a driving circuit according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of an infrared LED according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a semiconductor chip according to an embodiment of the present invention;
FIG. 5 is a schematic flow chart of a crystallization process according to an embodiment of the present invention;
FIG. 6 is a schematic view of an LRC process according to an embodiment of the present invention;
fig. 7a to 7k are schematic views illustrating a manufacturing process of an LED based on a lateral structure according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The present invention will be described in further detail with reference to the accompanying drawings.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of an infrared LED-based optical transmitter according to an embodiment of the present invention. The optical transmitter 10 includes: the device comprises an input end 11, an encoder 12, a signal converter 13, a driving circuit 14, an infrared LED light source 15 and an output end 16; wherein,
the input end 11, the encoder 12, the signal converter 13, the driving circuit 14, the infrared LED light source 15, and the output end 16 are sequentially connected in series to form a transmission link.
Specifically, the encoder 12 is configured to convert the HDB3 signal received by the input terminal 11 into an NRZ code, and then encode the NRZ code into a code pattern suitable for transmission over an optical cable; the signal converter 13 converts the digital signal coded by the encoder 12 into an analog signal; the driving circuit 14 is used for providing a driving current for the infrared LED light source 15.
Further, referring to fig. 2, fig. 2 is a schematic structural diagram of a driving circuit according to an embodiment of the present invention, where the driving circuit 14 includes a resistor R, a transistor T, a power resistor W, a first capacitor C1, and a second capacitor C2; the resistor R is electrically connected with the output end of the signal converter; the base electrode of the triode T is electrically connected with the resistor R, and the emitter electrode of the triode T is electrically connected with a ground end GND; the infrared light source 15 and the power resistor W are sequentially connected in series between the collector of the triode T and a power supply Vcc; the first capacitor C1 and the second capacitor C2 are connected in parallel and then connected in series between the power Vcc and the ground GND.
Specifically, the driving signal is transmitted to the resistor R through the signal converter 13, the cathode of the infrared light source 15 is connected to the base of the triode to drive the infrared light source 15 to emit light, and the anode of the infrared light source 15 is connected to the power Vcc. The power supply is preferably a 12V dc power supply. In addition, the infrared light source 15 may be connected in series to provide light emitting efficiency. For energy storage, energy storage capacitors C1 and C2 may be added between the power Vcc terminal and the ground GND, for example, the capacitance values of C1 and C2 are 2000 μ f or more.
Further, referring to fig. 3, fig. 3 is a schematic structural diagram of an infrared LED according to an embodiment of the present invention. The infrared LED light source 15 includes a base 151, a substrate 152, a semiconductor chip 153, a lead frame 154, a lead 155, a lens 156, and a resin 157; wherein the substrate 152 is disposed on the base 151; the semiconductor chip 153 is disposed on the substrate 152; the lead frame 144 is fixed on the base 151; the lead 145 connects the electrode of the semiconductor chip 153 and the lead frame 155; the lens 156 is disposed on the base 151; the resin 157 fills a space formed with the base 151 and the lens 156.
Wherein, the light emitting wavelength of the infrared LED light source 15 is 1550nm to 1650 nm.
According to the infrared LED-based optical transmitter, the infrared LED is adopted to replace a laser, so that on one hand, the service life of equipment is greatly prolonged, and the maintenance cost is reduced; on the other hand, the influence of temperature on the luminous efficiency of the light source is reduced, and therefore the circuit design is simplified.
Example two
In this embodiment, the structure and the process of the semiconductor chip are described in detail in the following.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a semiconductor chip according to an embodiment of the present invention.
Specifically, the semiconductor chip 153 includes:
a Si substrate 1531;
a PiN step structure 1533 formed by a Si and Ge laminated material and disposed at a central position of the surface of the Si substrate 11;
a positive electrode 1535 disposed on the upper surface of the PiN step structure 13;
and a negative electrode 1537 disposed on the upper surface of the Si substrate 1531 at positions on both sides of the PiN step structure 1533 to form the semiconductor chip 153.
Preferably, the Si substrate 11 is an N-type single crystal Si material.
Preferably, the PiN step structure 13 sequentially includes an N-type Si epitaxial layer, a tensile strained Ge layer, and a P-type Ge layer, and the N-type Si epitaxial layer, the tensile strained Ge layer, and the P-type Ge layer form a PiN structure.
Wherein the thickness of the N-type Si epitaxial layer is 120-200 nm, and the doping concentration is 5 × 1019～1×1020cm-3。
Wherein the tensile strained Ge layer comprises a crystallized Ge layer and a Ge epitaxial layer.
Further, the crystallized Ge layer is formed by crystallizing the Ge seed layer and the Ge main body layer.
Optionally, the crystallized Ge layer is formed by crystallizing the Ge seed layer and the Ge body layer.
Wherein the thickness of the Ge seed crystal layer is 40-50 nm; the thickness of the Ge main body layer is 150-200 nm.
Preferably, referring to fig. 5, fig. 5 is a schematic flow chart of a crystallization processing process according to an embodiment of the present invention. The crystallization treatment comprises the following steps:
step 1, heating the whole substrate material comprising the SOI substrate, the Ge seed layer and the Ge main body layer to 700 ℃;
step 2, crystallizing the whole substrate material by utilizing a laser-crystallization (LRC) process, wherein the laser wavelength of the LRC process is 808nm, the laser spot size is 10mm and × 1mm, and the laser power is 1.5kW/cm2The laser moving speed is 25 mm/s;
and 3, carrying out high-temperature thermal annealing treatment on the whole substrate material to finish the crystallization treatment.
Referring to fig. 6, fig. 6 is a schematic diagram of an LRC process method according to an embodiment of the present invention, where the LRC process is a thermal phase transition crystallization method, and the Ge epilayer on the SOI substrate is melted and recrystallized by laser heat treatment to laterally release dislocation defects of the Ge epilayer, so that not only can a high-quality Ge epilayer be obtained, but also a crystallization region can be precisely controlled by the LRC process, so that on one hand, the problem of Si and Ge mutual expansion between the SOI substrate and the Ge epilayer in the conventional process is avoided, and on the other hand, the material interface characteristics between Si and Ge are good.
Optionally, the Ge epitaxial layer is an intrinsic Ge material and has a thickness of 400-450 nm.
Optionally, the thickness of the P-type Ge layer is 180-200 nm, and the doping concentration of the P-type Ge layer is 0.5 × 1019～1×1019cm-3。
Optionally, the light emitting diode further includes a passivation layer disposed on the upper surfaces of the Si substrate and the PiN structure for isolating the positive electrode 15 and the negative electrode 17.
Wherein the passivation layer is SiO2The material has a thickness of 150-200 nm.
Preferably, the positive electrode 15 and the negative electrode 17 are made of Cr or Au, and the thickness thereof is 150-200 nm.
The semiconductor chip greatly improves the luminous efficiency of the device by utilizing the advantage of good interface characteristics of the Si substrate and the Ge epitaxial layer and utilizing the longitudinal structure of the N-type Si/tensile strain Ge/P-type Ge.
Referring to fig. 7a to 7k, fig. 7a to 7k are schematic views illustrating a manufacturing process of a vertical structure-based light emitting diode according to an embodiment of the present invention, the manufacturing method includes the following steps:
s101, selecting the doping concentration to be 5 × 1018cm-3The N-type single crystal silicon substrate sheet 001 as shown in fig. 7 a;
s102, growing an N-type Si epitaxial layer 002 with the thickness of 120-200 nm on a Si substrate by utilizing a CVD (chemical vapor deposition) process at the temperature of 300 ℃, wherein the doping concentration is 5 × 1019～1×1020cm-3As shown in fig. 7 b;
s103, growing a Ge seed crystal layer 003 with the thickness of 40-50 nm on the surface of the Si epitaxial layer by utilizing a CVD process at the temperature of 275-325 ℃, as shown in a figure 7 c;
s104, growing a Ge body layer 004 with the thickness of 150-200 nm on the surface of the Ge seed crystal layer by utilizing a CVD process at the temperature of 500-600 ℃, as shown in a figure 7 d;
s105, depositing SiO with the thickness of 100-150 nm on the surface of the Ge main body layer by utilizing a CVD process2Oxide layer 005, as shown in FIG. 7 e;
s106, heating the whole substrate material comprising the single crystal Si substrate, the N-type Si epitaxial layer, the Ge seed crystal layer, the Ge main body layer and the oxide layer to 700 ℃, and crystallizing the whole substrate material by utilizing a laser recrystallization technology, wherein the laser wavelength is 808nm, the laser spot size is 10mm, × 1mm, and the laser power is 1.5kW/cm2The laser moving speed is 25mm/s, then high-temperature thermal annealing is carried out, and meanwhile tensile stress is introduced;
s107, etching the oxide layer 005 by using a dry etching process to obtain a laser crystallized Ge layer 006 as shown in FIG. 7 f;
s108, growing a Ge epitaxial layer 007 with the thickness of 400-450 nm on the Ge layer after laser crystallization by utilizing a CVD process at the temperature of 400 ℃ of 300-; the Ge epitaxial layer is grown on the crystallized Ge layer, so that the Ge has good quality and low lattice mismatch rate.
S109, growing a P-type Ge layer structure 008 with the thickness of 180-200 nm on the surface of the Ge epitaxial layer by using a CVD process at the temperature of 300-400 ℃, wherein the doping concentration is 0.5 × 1019～1×1019cm-3. As shown in fig. 7 h;
s110, at room temperature, makingWith HCl H2O2:H2Performing mesa etching at a stable rate of 100nm/min with a chemical solvent of O1: 1:20, controlling the etching depth to 950nm, and exposing the Si substrate for metal contact, as shown in FIG. 7 i;
s111, depositing SiO with the thickness of 150-200 nm by using a plasma enhanced chemical vapor deposition technology2And a passivation layer 009 isolating the mesa from electrical contact with the outside. Selectively etching off SiO in the designated region by etching process2Forming a contact hole as shown in fig. 7 j;
s112, depositing a Cr/Au layer 010 with the thickness of 150-200 nm by electron beam evaporation. The metal Cr/Au in the designated area is selectively etched away by an etching process, and a planarization process is performed by Chemical Mechanical Polishing (CMP), as shown in FIG. 7 k.
In summary, the structure and the implementation of the present invention are described by using specific examples, and the above description of the examples is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention, and the scope of the present invention should be subject to the appended claims.
Claims (9)
1. An infrared LED based optical transmitter, comprising: the device comprises an input end, an encoder, a signal converter, a driving circuit, an infrared LED light source and an output end; wherein,
the input end, the encoder, the signal converter, the driving circuit, the infrared LED light source and the output end are sequentially connected in series to form a transmission link.
2. The optical transmitter of claim 1, wherein the encoder is an 8B/10B encoder.
3. The optical transmitter of claim 1, wherein the signal converter is a D/a converter.
4. The optical transmitter of claim 1, wherein the infrared LED light source comprises:
a base;
the lead frame is fixed on the base;
the substrate is arranged on the base;
a semiconductor chip disposed on the substrate;
a lead connecting the lead frame and the semiconductor chip;
a lens disposed on the base;
and the epoxy resin is filled in a space formed by the base and the lens.
5. The optical transmitter of claim 4, wherein the semiconductor chip is a vertical structure semiconductor chip comprising:
a Si substrate;
the PiN step structure formed by the Si and Ge laminated materials is arranged at the central position of the surface of the Si substrate;
the positive electrode is arranged on the upper surface of the Pin step structure;
and the negative electrode is arranged on the upper surface of the Si substrate and is positioned at the positions on two sides of the Pin step structure so as to form the semiconductor chip.
6. The optical transmitter of claim 5, wherein the Pin step structure comprises an N-type Si epitaxial layer, a tensile strained Ge layer, and a P-type Ge layer in this order, and the N-type Si epitaxial layer, the tensile strained Ge layer, and the P-type Ge layer form a Pin structure.
7. The optical transmitter of claim 6, wherein the tensile strained Ge layer comprises a crystallized Ge layer and a Ge epilayer.
8. The optical transmitter of claim 7, wherein the Ge epilayer is an intrinsic Ge material and has a thickness of 400-450 nm.
9. The optical transmitter of claim 1, wherein the semiconductor chip further comprises a passivation layer disposed on the upper surfaces of the Si substrate and the PiN structure for isolating the positive electrode and the negative electrode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710346430.2A CN107317633A (en) | 2017-05-17 | 2017-05-17 | A kind of optical sender based on infrared LED |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710346430.2A CN107317633A (en) | 2017-05-17 | 2017-05-17 | A kind of optical sender based on infrared LED |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2829098Y (en) * | 2005-03-04 | 2006-10-18 | 东贝光电科技股份有限公司 | Improved structure of side solid semiconductor light-emitting element |
| CN103326790A (en) * | 2013-06-28 | 2013-09-25 | 成都思迈科技发展有限责任公司 | Optical transmitter capable of automatically controlling power |
| CN103595485A (en) * | 2012-08-13 | 2014-02-19 | 成都思迈科技发展有限责任公司 | A power self-testing optical transmitter |
| CN103595470A (en) * | 2013-11-28 | 2014-02-19 | 重庆理工大学 | Low power consumption infrared light communication system |
-
2017
- 2017-05-17 CN CN201710346430.2A patent/CN107317633A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2829098Y (en) * | 2005-03-04 | 2006-10-18 | 东贝光电科技股份有限公司 | Improved structure of side solid semiconductor light-emitting element |
| CN103595485A (en) * | 2012-08-13 | 2014-02-19 | 成都思迈科技发展有限责任公司 | A power self-testing optical transmitter |
| CN103326790A (en) * | 2013-06-28 | 2013-09-25 | 成都思迈科技发展有限责任公司 | Optical transmitter capable of automatically controlling power |
| CN103595470A (en) * | 2013-11-28 | 2014-02-19 | 重庆理工大学 | Low power consumption infrared light communication system |
Non-Patent Citations (3)
| Title |
|---|
| ZIHENG LIU 等: "Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering", 《THIN SOLID FILMS》 * |
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