CN107317633A - A kind of optical sender based on infrared LED - Google Patents
A kind of optical sender based on infrared LED Download PDFInfo
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- CN107317633A CN107317633A CN201710346430.2A CN201710346430A CN107317633A CN 107317633 A CN107317633 A CN 107317633A CN 201710346430 A CN201710346430 A CN 201710346430A CN 107317633 A CN107317633 A CN 107317633A
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- optical sender
- infrared led
- light source
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/502—LED transmitters
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
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Abstract
The present invention relates to a kind of optical sender based on infrared LED, it is characterised in that including：Input, encoder, signal adapter, drive circuit, infrared LED light source and output end；Wherein, the input, the encoder, the signal adapter, the drive circuit, the infrared LED light source and the output end are connected in series to form transmission link successively.The present invention replaces laser as the light source of optical sender with infrared LED, influence of the temperature to light source light-emitting efficiency is reduced, so as to simplify circuit design.
Description
Technical field
The invention belongs to technical field of photo communication, more particularly to a kind of optical sender based on infrared LED.
Background technology
The basic function of optical sender is that the electric signal for carrying information is converted into optical signal, and optical signal is sent into optical fiber
In, i.e. the effect of optical sender is that the HDB3 that will be sent from multiplexing equipment believes code conversion into NRZ codes, and it is suitable then to compile NRZ codes
The pattern transmitted on lightguide cable link is closed, electrical/optical conversion is finally carried out again, optical signal is converted the electrical signal to and couples entering light
It is fine.Therefore, the development of Fibre Optical Communication Technology is inseparable with the development of light source technology.
At present, the light source of conventional optical sender is LASER Light Source, and LASER Light Source is the perfect light source of High Speed Modulation, but its
There is also it is inevitable the problem of.On the one hand, change of the semiconductor laser of transmitting laser to temperature is very sensitive, temperature
Change and the aging of device bring unstability to laser so that power output changes a lot；The opposing party
Face, the service life of semiconductor laser is shorter, and maintenance cost is higher.Therefore, much closely, low-speed communication field, then
Can be with light emitting diode come instead of light source of the semiconductor laser as optical sender.But there is hair in traditional light emitting diode
The problem of light efficiency is low, so as to greatly limit its application in the field of communications.
Therefore, how to design a kind of optical sender based on infrared LED light source just becomes of crucial importance.
The content of the invention
In order to solve the above-mentioned technical problem, the invention provides a kind of optical sender based on infrared LED, wherein, including：
Input, encoder, signal adapter, drive circuit, infrared LED light source and output end；Wherein,
The input, the encoder, the signal adapter, the drive circuit, the infrared LED light source and
The output end is connected in series to form transmission link successively.
In one embodiment of the invention, the encoder is 8B/10B encoders.
In one embodiment of the invention, the signal adapter is D/A converter.
In one embodiment of the invention, the infrared LED light source includes：
Base；
Lead frame is fixed on the base；
Substrate, is arranged on the base；
Semiconductor chip, is arranged on the substrate；
Lead, connects the lead frame and the semiconductor chip；
Lens, are arranged on the base；
In epoxy resin, the space for being filled in the base and the lens forming.
In one embodiment of the invention, the semiconductor chip is vertical structure semiconductor chip, including：
Si substrates；
The PiN ledge structures of Si, Ge laminated material formation, are arranged at the center position of the Si substrate surfaces；
Positive electrode, is arranged at the upper surface of the PiN ledge structures；
Negative electrode, is arranged at the upper surface of the Si substrates and at the position of PiN ledge structures both sides, to be formed
State semiconductor chip.
In one embodiment of the invention, the PiN ledge structures include N-type Si epitaxial layers, tensile strain Ge successively
Layer, Ge layers of p-type, and the N-type Si epitaxial layers, described tensile strain Ge layers and the p-type Ge layers of formation PiN structures.
In one embodiment of the invention, described tensile strain Ge layers include Ge layers of crystallization and Ge epitaxial layers.
In one embodiment of the invention, the Ge epitaxial layers be intrinsic Ge materials, and its thickness be 400~
450nm。
In one embodiment of the invention, the optical sender also includes passivation layer, the semiconductor chip passivation layer
The upper surface of the Si substrates and the PiN structures is arranged at, for isolating the positive electrode and the negative electrode.
Compared with prior art, the invention has the advantages that：
The present invention replaces laser with infrared LED as the light source of optical sender, on the one hand, greatly improving equipment makes
With the life-span, maintenance cost is reduced；On the other hand, influence of the temperature to light source light-emitting efficiency is reduced, so as to simplify circuit
Design.
Brief description of the drawings
Below in conjunction with accompanying drawing, the embodiment to the present invention is described in detail.
Fig. 1 is a kind of structural representation of the optical sender based on infrared LED provided in an embodiment of the present invention；
Fig. 2 is a kind of structural representation of drive circuit provided in an embodiment of the present invention；
Fig. 3 is a kind of structural representation of infrared LED provided in an embodiment of the present invention；
Fig. 4 is a kind of structural representation of semiconductor chip provided in an embodiment of the present invention；
Fig. 5 is a kind of schematic flow sheet of Crystallizing treatment technique provided in an embodiment of the present invention；
Fig. 6 is a kind of LRC processes schematic diagram provided in an embodiment of the present invention；
Fig. 7 a- Fig. 7 k are a kind of LED based on transversary of embodiment of the present invention preparation technology schematic diagram.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
The present invention is described in further details below in conjunction with the accompanying drawings.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of structural representation of the optical sender based on infrared LED provided in an embodiment of the present invention
Figure.The optical sender 10 includes：Input 11, encoder 12, signal adapter 13, drive circuit 14, infrared LED light source 15 and
Output end 16；Wherein,
The input 11, the encoder 12, signal adapter 13, drive circuit 14, the infrared LED light source 15,
The output end 16 is connected in series to form transmission link successively.
Specifically, the HDB3 that the encoder 12 is used to receiving the input 11 believes code conversion into NRZ codes, so
NRZ codes are compiled afterwards to be adapted to the pattern transmitted on lightguide cable link；The signal adapter 13 is by the coding of encoder 12
Data signal after reason is converted to analog signal；The drive circuit 14 is used to provide driving electricity for the infrared LED light source 15
Stream.
Further, referring to Fig. 2, Fig. 2 is a kind of structural representation of drive circuit provided in an embodiment of the present invention, described
Drive circuit 14 includes resistance R, triode T, power resistor W, the first electric capacity C1, the second electric capacity C2；Wherein, the electricity
Hinder the output end that R electrically connects the signal adapter；The base stage of the triode T electrically connects the resistance R and its emitter stage electricity
It is connected to earth terminal GND；The infrared light supply 15 and the power resistor W be sequentially connected in series colelctor electrode in the triode T with
Between power Vcc；The first electric capacity C1 and the second electric capacity C2 are simultaneously serially connected with the power Vcc and the earth terminal after connecing
Between GND.
Specifically, drive signal is sent at resistance R through signal adapter 13, and infrared light is connected by the base stage of triode
The negative pole in source 15 is to drive infrared light supply 15 to light, and the positive pole of infrared light supply 15 is connected to power Vcc.The power supply is preferably 12V
Dc source.In addition, infrared light supply 15 can concatenate it is multiple to provide luminous efficiency., can be at power Vcc end for energy storage
Increase storage capacitor C1 and C2 between earth terminal GND, such as C1 and C2 capacitance are more than 2000 μ f.
Further, referring to Fig. 3, Fig. 3 is a kind of structural representation of infrared LED provided in an embodiment of the present invention.It is described
Infrared LED light source 15 includes base 151, substrate 152, semiconductor chip 153, lead frame 154, lead 155, lens 156 and tree
Fat 157；Wherein, the substrate 152 is arranged on the base 151；Semiconductor chip 153 be arranged at the substrate 152 it
On；The lead frame 144 is fixed on the base 151；The lead 145 connects the electrode of the semiconductor chip 153
With the lead frame 155；The lens 156 are arranged on the base 151；The filling of resin 157 and the base 151
In the space of the lens 156 formation.
Wherein, the emission wavelength of infrared LED light source 15 is 1550nm~1650nm.
The optical sender based on infrared LED of the present invention, replaces laser, on the one hand, greatly lifted using infrared LED
Service life of equipment, reduces maintenance cost；On the other hand, influence of the temperature to light source light-emitting efficiency is reduced, so that simple
Circuit design is changed.
Embodiment two
The present embodiment is on the basis of above-described embodiment, and emphasis is situated between in detail to the structure and technique of semiconductor chip
Continue.
Fig. 4 is referred to, Fig. 4 is a kind of structural representation of semiconductor chip provided in an embodiment of the present invention.
Specifically, the semiconductor chip 153 includes：
Si substrates 1531；
The PiN ledge structures 1533 of Si, Ge laminated material formation, are arranged at the center on the surface of Si substrates 11
Place；
Positive electrode 1535, is arranged at the upper surface of the PiN ledge structures 13；
Negative electrode 1537, is arranged at the upper surface of the Si substrates 1531 and positioned at the position of the both sides of PiN ledge structures 1533
Place is put, to form the semiconductor chip 153.
Preferably, the Si substrates 11 are N-type single crystalline Si material.
Preferably, the PiN ledge structures 13 include N-type Si epitaxial layers, Ge layers of tensile strain, Ge layers of p-type, and institute successively
State N-type Si epitaxial layers, described tensile strain Ge layers and the p-type Ge layers of formation PiN structures.
Wherein, the thickness of the N-type Si epitaxial layers is 120~200nm, and its doping concentration is 5 × 1019~1 ×
1020cm-3。
Wherein, described tensile strain Ge layers include Ge layers of crystallization and Ge epitaxial layers.
Further, described crystallization Ge layers are formed by Ge inculating crystal layers and Ge body layers after Crystallizing treatment.
Alternatively, described crystallization Ge layers are formed by Ge inculating crystal layers and Ge body layers after Crystallizing treatment.
Wherein, the Ge inculating crystal layers thickness is 40~50nm；The Ge body layers thickness is 150~200nm.
Preferably, Fig. 5 is referred to, Fig. 5 is a kind of schematic flow sheet of Crystallizing treatment technique provided in an embodiment of the present invention.
The Crystallizing treatment comprises the following steps：
Step 1, the whole backing material including the SOI substrate, the Ge inculating crystal layers, the Ge body layers is heated to
700℃；
Step 2, using whole described in laser again crystallization process (Laserre-crystallization, abbreviation LRC) crystallization
Backing material；Wherein the optical maser wavelength of LRC techniques is 808nm, laser spot size 10mm × 1mm, and laser power is 1.5kW/
cm2, laser traverse speed is 25mm/s；
Step 3, carry out high-temperature thermal annealing processing to the whole backing material to complete the Crystallizing treatment.
Please with further reference to Fig. 6, Fig. 6 is a kind of LRC processes schematic diagram provided in an embodiment of the present invention, LRC techniques
It is a kind of method of thermal induced phase transition crystallization, by laser heat treatment, makes Ge epitaxial layers fusing recrystallization in SOI substrate, laterally release
The dislocation defects of Ge epitaxial layers are put, high-quality Ge epitaxial layers can be not only obtained, simultaneously as LRC techniques accurately control crystalline substance
Change region, on the one hand avoid Si, Ge exclusive problem between SOI substrate and Ge epitaxial layers, another aspect Si in common process
Material interface characteristic is good between Ge.
Alternatively, the Ge epitaxial layers are intrinsic Ge materials, and its thickness is 400~450nm.
Alternatively, described p-type Ge layers of thickness is 180~200nm, and its doping concentration is 0.5 × 1019~1 ×
1019cm-3。
Alternatively, the light emitting diode also includes passivation layer, and the passivation layer is arranged at the Si substrates and described
The upper surface of PiN structures, for isolating the positive electrode 15 and the negative electrode 17.
Wherein, the passivation layer is SiO2Material, and its thickness is 150~200nm.
Preferably, the positive electrode 15 and the negative electrode 17 be Cr or Au materials, and its thickness be 150~
200nm。
The semiconductor chip of the present invention, using Si substrates and the good advantage of Ge epitaxial layer interfaces characteristic, is opened using N-type Si/
Ge/P type Ge vertical structures are strained, the luminous efficiency of device is drastically increased.
It refer to a kind of light emitting diode based on vertical structure that Fig. 7 a- Fig. 7 k, Fig. 7 a- Fig. 7 k are the embodiment of the present invention
Preparation technology schematic diagram, the preparation method comprises the following steps：
S101, selection doping concentration are 5 × 1018cm-3N type single crystal silicon substrate slice 001, as shown in Figure 7a；
S102, at a temperature of 300 DEG C, using CVD techniques Si substrate growths thickness for 120~200nm N types Si outside
Prolong layer 002, doping concentration is 5 × 1019~1 × 1020cm-3, as shown in Figure 7b；
S103, at a temperature of 275 DEG C~325 DEG C, using CVD techniques Si epi-layer surfaces growth thickness be 40~
50nm Ge inculating crystal layers 003, as shown in Figure 7 c；
S104, at a temperature of 500 DEG C~600 DEG C, using CVD techniques Ge seed crystal surfaces growth thickness be 150~
200nm Ge body layers 004, as shown in figure 7d；
S105, using CVD techniques in Ge main body layer surfaces deposition thickness be 100~150nm SiO2Oxide layer 005,
As shown in figure 7e；
S106, the whole substrate of single crystal Si substrate, N-type Si epitaxial layers, Ge inculating crystal layers, Ge body layers and oxide layer will be included
Material is heated to 700 DEG C, and using the laser whole backing material of crystallization technology crystallization again, wherein optical maser wavelength is 808nm, laser light
Spot size 10mm × 1mm, laser power is 1.5kW/cm2, laser traverse speed is 25mm/s, then high-temperature thermal annealing, with this
Tensile stress is introduced simultaneously；
S107, using dry etch process etching oxidation layer 005, the layers of the Ge after laser crystallization 006 are obtained, such as Fig. 7 f institutes
Show；
S108, at a temperature of 300-400 DEG C, using CVD techniques on the Ge layers after laser crystallization growth thickness be 400~
450nm Ge epitaxial layers 007, as shown in figure 7g；Wherein, because Ge epitaxial layers are grown on the Ge layers after crystallization, so
Preferably, lattice mismatch rate is relatively low for Ge quality.
S109, at a temperature of 300-400 DEG C, using CVD techniques Ge epi-layer surfaces growth thickness be 180~200nm
P-type Ge Rotating fields 008, doping concentration be 0.5 × 1019~1 × 1019cm-3.As shown in Fig. 7 h；
S110, at room temperature, uses HCl:H2O2:H2O=1:1:20 chemical solvent, is entered with steady rate 100nm/min
Row mesa etch, etching it is deep-controlled in 950nm, expose Si substrates and do metal contact, as shown in figure 7i；
S111, using plasma enhanced chemical vapor deposition technology, deposition thickness is 150~200nm SiO2Passivation
Layer 009, isolation table top makes electrical contact with extraneous.Fall the SiO of designated area with etching technics selective etch2Contact hole is formed, such as
Shown in Fig. 7 j；
S112, utilize electron beam evaporation deposition thickness be 150~200nm Cr/Au layers 010.Carved and selected using etching technics
The metal Cr/Au of selecting property eating away designated area, carries out planarization process, as shown in Fig. 7 k using chemically mechanical polishing (CMP).
In summary, specific case used herein is set forth to structure of the present invention and embodiment, and the above is real
The explanation for applying example is only intended to the method and its core concept for helping to understand the present invention；Simultaneously for the general technology of this area
Personnel, according to the thought of the present invention, will change in specific embodiments and applications, to sum up, this specification
Content be should not be construed as limiting the invention, and protection scope of the present invention should be defined by appended claim.
Claims (9)
1. a kind of optical sender based on infrared LED, it is characterised in that including：Input, encoder, signal adapter, driving
Circuit, infrared LED light source and output end；Wherein,
The input, the encoder, the signal adapter, the drive circuit, the infrared LED light source and described
Output end is connected in series to form transmission link successively.
2. optical sender according to claim 1, it is characterised in that the encoder is 8B/10B encoders.
3. optical sender according to claim 1, it is characterised in that the signal adapter is D/A converter.
4. optical sender according to claim 1, it is characterised in that the infrared LED light source includes：
Base；
Lead frame is fixed on the base；
Substrate, is arranged on the base；
Semiconductor chip, is arranged on the substrate；
Lead, connects the lead frame and the semiconductor chip；
Lens, are arranged on the base；
In epoxy resin, the space for being filled in the base and the lens forming.
5. optical sender according to claim 4, it is characterised in that the semiconductor chip is vertical structure semiconductor core
Piece, including：
Si substrates；
The PiN ledge structures of Si, Ge laminated material formation, are arranged at the center position of the Si substrate surfaces；
Positive electrode, is arranged at the upper surface of the PiN ledge structures；
Negative electrode, is arranged at the upper surface of the Si substrates and at the position of PiN ledge structures both sides, to form described half
Conductor chip.
6. optical sender according to claim 5, it is characterised in that the PiN ledge structures include N-type Si extensions successively
Layer, Ge layers of tensile strain, Ge layers of p-type, and the N-type Si epitaxial layers, described tensile strain Ge layers and described p-type Ge layers form PiN knots
Structure.
7. optical sender according to claim 6, it is characterised in that described tensile strain Ge layers are included outside Ge layers of crystallization and Ge
Prolong layer.
8. optical sender according to claim 7, it is characterised in that the Ge epitaxial layers are intrinsic Ge materials, and it is thick
Spend for 400~450nm.
9. optical sender according to claim 1, it is characterised in that the semiconductor chip also includes passivation layer, described
Passivation layer is arranged at the upper surface of the Si substrates and the PiN structures, for isolating the positive electrode and the negative electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710346430.2A CN107317633A (en) | 2017-05-17 | 2017-05-17 | A kind of optical sender based on infrared LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710346430.2A CN107317633A (en) | 2017-05-17 | 2017-05-17 | A kind of optical sender based on infrared LED |
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| Publication Number | Publication Date |
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| CN107317633A true CN107317633A (en) | 2017-11-03 |
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| CN201710346430.2A Pending CN107317633A (en) | 2017-05-17 | 2017-05-17 | A kind of optical sender based on infrared LED |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2829098Y (en) * | 2005-03-04 | 2006-10-18 | 东贝光电科技股份有限公司 | Improved structure of side solid semiconductor light-emitting element |
| CN103326790A (en) * | 2013-06-28 | 2013-09-25 | 成都思迈科技发展有限责任公司 | Optical transmitter capable of automatically controlling power |
| CN103595485A (en) * | 2012-08-13 | 2014-02-19 | 成都思迈科技发展有限责任公司 | A power self-testing optical transmitter |
| CN103595470A (en) * | 2013-11-28 | 2014-02-19 | 重庆理工大学 | Low power consumption infrared light communication system |
-
2017
- 2017-05-17 CN CN201710346430.2A patent/CN107317633A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2829098Y (en) * | 2005-03-04 | 2006-10-18 | 东贝光电科技股份有限公司 | Improved structure of side solid semiconductor light-emitting element |
| CN103595485A (en) * | 2012-08-13 | 2014-02-19 | 成都思迈科技发展有限责任公司 | A power self-testing optical transmitter |
| CN103326790A (en) * | 2013-06-28 | 2013-09-25 | 成都思迈科技发展有限责任公司 | Optical transmitter capable of automatically controlling power |
| CN103595470A (en) * | 2013-11-28 | 2014-02-19 | 重庆理工大学 | Low power consumption infrared light communication system |
Non-Patent Citations (3)
| Title |
|---|
| ZIHENG LIU 等: "Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering", 《THIN SOLID FILMS》 * |
| 魏璇: "GeSn发光二极管研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
| 黄志伟 等: "激光退火改善Si上外延Ge晶体质量", 《第十一届全国硅基光电子材料及器件研讨会论文摘要集》 * |
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