CN107316922B - LED epitaxial structure and preparation method thereof based on GaN hexagonal pyramid array - Google Patents
LED epitaxial structure and preparation method thereof based on GaN hexagonal pyramid array Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000010410 layer Substances 0.000 claims abstract description 126
- 239000002096 quantum dot Substances 0.000 claims abstract description 24
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000012792 core layer Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 239000012159 carrier gas Substances 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000011258 core-shell material Substances 0.000 abstract description 2
- 238000000605 extraction Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 210000000887 face Anatomy 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005701 quantum confined stark effect Effects 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 210000005252 bulbus oculi Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The present invention relates to semiconductor field, a kind of LED epitaxial structure, including substrate, forming core layer, undoped GaN layer, n-type GaN layer and the porous SiN in n-type GaN layerxLayer；It further include being formed in porous SiNxN-shaped GaN hexagonal pyramid array at layer hole, and the quantum dot positioned at hexagonal pyramid apex, the quantum wire on six ribs and the multiple quantum well layer on six semi-polarity (10-11) crystal faces, are finally p-type GaN filled layers.Quantum dot/line/the well layer formed at GaN hexagonal pyramid and different location on it constitutes three-dimensional core-shell structure.The structure light-emitting area is big, and light extraction efficiency is high, and due to the influence of the factors such as the difference of In content and polarity effect, quantum dot/line/well structure emission wavelength is also different, can be by reasonably controlling realization white light emission.Patterned substrate is not necessarily in GaN hexagonal pyramid array preparation process, process flow is simple, while the GaN crystal quality grown is high, can effectively improve the luminous efficiency of LED.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of LED epitaxial structure based on GaN hexagonal pyramid array and
Preparation method.
Background technique
Nowadays, III-V race's semiconductor material flourishes, and enters in people's lives in many fields,
Middle GaN has even more attracted the eyeball of many people as the important materials for preparing efficient LED.Compared with traditional materials, GaN conduct
The representative of third generation semiconductor material has excellent physics, chemical property, such as: forbidden bandwidth is wider, and thermal stability is good,
Electron mobility is very high, and a kind of still direct band-gap semicondictor material.Therefore, GaN base blue-ray LED large-scale application
The consumption of the energy is greatly reduced in production and living, while bringing convenience to people's lives.But GaN material
The potentiality of material are far above in this way, the space that GaN base LED still has greatly improved.As can sufficiently excavating, utilizing GaN base LED's
Characteristic researches and develops a kind of crystal quality height, and preparation cost is low, and colour rendering is good, the LED that fluorescent powder dependence is low and luminous efficiency is high
Structure will be the key subjects of the industry.
Summary of the invention
For this purpose, present invention generally provides a kind of LED epitaxial structure and preparation method thereof based on hexagonal pyramid array, intends to solve
Existing LED epitaxial structure crystal quality is poor, and preparation cost is high, and colour rendering is poor, and fluorescent powder dependence is strong, and luminous efficiency is low etc. asks
Topic.In addition, The invention also achieves quantum dot, quantum wire and Quantum Well is prepared simultaneously in a three-dimensional hexagonal pyramid structure,
This three's emission wavelength is significantly different, thus can be directly realized by white light emission by rationally controlling.
The technical solution adopted by the invention is as follows:
LED epitaxial structure of the present invention based on GaN hexagonal pyramid array, including substrate, forming core layer, undoped GaN
Layer, n-type GaN layer and the porous SiN in the n-type GaN layerxLayer；It further include being formed in the porous SiNxAt layer hole
N-shaped GaN hexagonal pyramid array, and the quantum dot positioned at hexagonal pyramid apex, the quantum wire on six ribs and in six semi-polarities
Multiple quantum well layer on (10-11) crystal face is finally p-type GaN filled layer.
Optionally, the undoped GaN layer is with a thickness of 2-3 μm, and the n-type GaN layer is with a thickness of 1-3 μm.
Optionally, the porous SiNxLayer is noncrystalline, porous SiNxLayer, with a thickness of 2nm-15nm, aperture is 20 nm-
100nm。
Optionally, the GaN hexagonal pyramid is Si doping, is highly 200nm-900nm, diameter 200nm-900nm.
Optionally, the multiple quantum well layer is InGaN/GaN multiple quantum well layer, InGaN well layer with a thickness of 2nm-10nm,
GaN barrier layer thickness is 10nm-30nm, period 3-10.
Optionally, the region in described ten nanometers of GaN hexagonal pyramid top has also appeared the quantum dot of rich In, in six ribs
Then occurs the quantum wire of rich In on the rib of cone.
Optionally, the p-type GaN is the p-type GaN filled layer of Mg doping, filling thickness 300nm-1000nm.
The preparation method of LED epitaxial structure of the present invention based on GaN hexagonal pyramid array, includes the following steps:
S1, forming core layer, undoped GaN layer and N-type GaN layer are grown on substrate；
S2, porous SiN is grown in the N-type GaN layerxLayer；
S3, in the porous SiNxGrowing n-type GaN hexagonal pyramid array at the hole of layer；
S4, growth quantum point, quantum wire, quantum well layer at six semi-polarity face different locations of hexagonal pyramid；
S5, entire three-dimensional structure is filled with p-type GaN, finally grows up to plane.
Optionally, in the step S1, the growth temperature of the forming core layer is 520 DEG C -570 DEG C, pressure 400mbar-
The growth temperature of 800mbar, time 100s-200s, the undoped GaN layer are 1000 DEG C -1100 DEG C, and pressure is
200mbar-400mbar, time 4000s-5000s, with a thickness of 2 μm -3 μm;The growth temperature of the n-type GaN layer is 1000
DEG C -1100 DEG C, pressure 100mbar-200mbar, growth time 1000s-2000s, with a thickness of 1 μm -3 μm；
Optionally, in the step S2, the porous SiNxThe growth conditions of layer are as follows: the silicon source is SiH4, the nitrogen
Source is NH3, carrier gas H2, growth temperature is 1000 DEG C -1100 DEG C, pressure 133mbar, growth time 100s-200s, it
NH again afterwards3Anneal 400s-600s under atmosphere；
Optionally, in the step S3, the growth conditions of the N-type GaN hexagonal pyramid array are as follows: the gallium source is TMGa,
Silicon source is SiH4, nitrogen source NH3, H2For carrier gas, growth temperature is 980 DEG C -1100 DEG C, pressure 600mbar, and V/III ratio is
10-200 is grown to 3600s-4800s；
Optionally, in the step S4, the quantum dot/line/well layer growing method are as follows: the gallium source is TEGa, nitrogen
Source is NH3, N2As carrier gas, growth temperature is 800 DEG C -860 DEG C, pressure 400mbar, obtains GaN after growing 700s-1200s
Barrier layer；Using TEGa as gallium source, TMIn is indium source, NH3For nitrogen source, N2For carrier gas, growth temperature is 690 DEG C -760 DEG C, and pressure is
400mbar obtains InGaN well layer after growing 400s-700s；The quantum dot and quantum wire are in Quantum Well preparation process six
It is respectively formed on the apex of pyramid and six ribs；
Optionally, in the step S5, the growing method of the p-type GaN filled layer are as follows: using TEGa as gallium source, NH3
As nitrogen source, H2As carrier gas, growth temperature is 900 DEG C -1000 DEG C, chamber pressure 400mbar, and growth time is
900s-2700s.The annealing process time is 900s, and annealing temperature is 930 DEG C.
Above-mentioned technical proposal of the invention has the advantage that compared with prior art
1, a kind of LED epitaxial structure based on GaN hexagonal pyramid array of the present invention, including substrate, forming core layer, non-mix
Miscellaneous GaN layer, n-type GaN layer and the porous SiN in the n-type GaN layerxLayer；It further include being formed in the porous SiNxLayer hole
N-shaped GaN hexagonal pyramid array at hole, and the quantum dot positioned at hexagonal pyramid apex, the quantum wire on six ribs and at six
Multiple quantum well layer on semi-polarity (10-11) crystal face is finally p-type GaN filled layer.The structure light-emitting area is bigger, effectively
Improve internal quantum efficiency.And not only there is Quantum Well on semi-polarity face in the structure, also at hexagonal pyramid top ten
Occur the quantum dot and quantum wire of rich In respectively on region and six ribs in nanometer, so as to be directly realized by white light hair
It penetrates.It is self-assembly of in addition, the structure belongs to, is not necessarily to template and patterned substrate, process costs are simpler.
2, a kind of LED epitaxial structure based on GaN hexagonal pyramid array of the present invention, the hexagonal pyramid array have half
Polar (10-11) crystal face, the polarized electric field very little in the face greatly reduce quantum confined stark effect, the spoke of carrier
Penetrating the probability of recombination can also increase accordingly, and which improves the internal quantum efficiencies of LED.
3, a kind of LED epitaxial structure based on GaN hexagonal pyramid array of the present invention, the porous SiNXIt is easy in place
Fault forming core has the function of shielding dislocation, so the dislocation line in n-type GaN layer can terminate in SiNXPlace, we obtain in this way
GaN hexagonal pyramid structural dislocation it is just seldom, substantially increase the crystal quality of GaN, thus reduce non-radiative recombination center and
Capture of the Trapping Centers to carrier, while the polarization field generated due to defect is also reduced, greatly improve the interior of LED
Quantum efficiency.
4, a kind of LED epitaxial structure based on GaN hexagonal pyramid array of the present invention, the quantum trap growth is in six ribs
On semi-polarity (10-11) crystal face of cone, can have more binding sites, thus In atom in semi-polarity (10-11) crystal face
Incorporation efficiency is very high；The Quantum Dots Growth hexagonal pyramid apex, this is because to be greater than Ga former for the diffusion length of In atom
Son, during quantum trap growth, the In in six semi-polarity faces can diffuse to hexagonal pyramid vertex, the quantum of richness In formed here
Point region, and the polarized electric field at this is larger, and quantum confined stark effect is reinforced, and the emission wavelength of quantum dot is very long；
The quantum wire is grown on six ribs of hexagonal pyramid, due to assembling here after the In diffusion of two neighboring crystal face, is measured
The In content relative quantum trap of sub-line is higher.So we have obtained what emission wavelength successively increased in a three-dimensional structure
White light emission may be implemented by control in Quantum Well, quantum wire, quantum-dot structure.
5, a kind of LED epitaxial structure based on GaN hexagonal pyramid array of the present invention is examined from the angle of production practicability
Consider, fill entire three-dimensional structure with p-type GaN, finally grow up to plane, this can directly utilize ready-made planar LED structure
Plated electrode and encapsulation step are laid a good foundation to be finally prepared into device.
6, the preparation method of a kind of LED epitaxial structure based on GaN hexagonal pyramid array of the present invention, including walk as follows
Rapid S1, forming core layer, undoped GaN layer and n-type GaN layer are grown on substrate；S2, porous SiN is grown in the n-type GaN layer；
S3, the growing n-type GaN hexagonal pyramid at the porous silicon nitride hole；S4, on hexagonal pyramid simultaneously growth quantum point, quantum wire,
Quantum well structure；S5, entire three-dimensional structure is filled with p-type GaN, finally grows up to plane.The preparation method of the LED epitaxial structure
Simple easily to implement, not only process costs are low, and can effectively ensure that product yield.
Detailed description of the invention
In order to make the content of the present invention more clearly understood, it below according to specific embodiments of the present invention and combines
Attached drawing, the present invention is described in further detail, wherein
Fig. 1 is the LED epitaxial structure schematic diagram of the present invention based on GaN hexagonal pyramid array；
Fig. 2 is single N-shaped GaN hexagonal pyramid structural schematic diagram；
Appended drawing reference indicates in Fig. 1 and 2 are as follows: the undoped GaN layer of 1- substrate, 2-, 3-n type GaN layer, the porous SiN of 4-XLayer,
5-p type GaN filled layer, 6- multiple quantum well layer, 7- quantum wire, 8- quantum dot.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to reality of the invention
The mode of applying is described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein.
On the contrary, providing these embodiments, so that the disclosure will be thorough and complete, and design of the invention will be fully conveyed to
Those skilled in the art, the present invention will only be defined by the appended claims.In the accompanying drawings, for clarity, the area Ceng He can be exaggerated
The size and relative size in domain.It should be understood that when element such as layer, region or substrate are referred to as " being formed in " or " setting
" another element "upper" when, which can be arranged directly on another element, or there may also be intermediary elements.
On the contrary, intermediary element is not present when element is referred to as on " being formed directly into " or " being set up directly on " another element.
Embodiment
The present embodiment provides a kind of LED epitaxial structures based on GaN hexagonal pyramid array, as shown in Figure 1: include substrate 1, shape
Stratum nucleare, undoped GaN layer 2, n-type GaN layer 3 and the porous SiN in the n-type GaN layerxLayer 4；Further include be formed in it is described
Porous SiNxLayer 4 porous structure hole at N-shaped GaN hexagonal pyramid array, and positioned at hexagonal pyramid apex quantum dot 8,
The multiple quantum well layer 6 on quantum wire 7 and six semi-polarity (10-11) crystal faces on six ribs, is finally p-type GaN filled layer 5.
The three-dimensional that multiple quantum well layer 6, quantum wire 7 and quantum dot 8 on GaN hexagonal pyramid array and each of which outer surface are constituted
Core-shell structure, light-emitting area are big.Compared to thin-film material, it can produce more number of photons under identical current density, mention
The high internal quantum efficiency of LED epitaxial structure.
Porous SiNxLayer 4 is not only able to the growth templates as N-shaped GaN hexagonal pyramid array, additionally it is possible to the knot be effectively reduced
The continued growth of the dislocation density and dislocation of structure improves LED epitaxial structure to reduce the non-radiative recombination center of active area
Internal quantum efficiency.
Multiple quantum well layer 6 is grown on semi-polarity (10-11) crystal face of GaN hexagonal pyramid, and quantum wire 7 is grown in hexagonal pyramid
On six ribs, quantum dot 8 is then grown in apex, since the diffusion length of In in growth course is larger, the content of three In
Have any different, emission wavelength according to Quantum Well/line/sequence be sequentially increased, we can be by rationally controlling realization unstressed configuration
White light emission under the conditions of powder.
P-type GaN filled layer 5 fills entire three-dimensional structure, has finally grown up to plane, facilitates subsequent plated electrode and encapsulation
Technique.
As an embodiment of the present invention, in the present embodiment, undoped GaN layer 2 is with a thickness of 2 μm, the n-type GaN layer 3
With a thickness of 2 μm.As convertible embodiment of the invention, undoped 2 thickness of GaN layer can also be 1 μm -3 μm, the N-shaped GaN
3 thickness of layer can also be 1 μm -3 μm, and the purpose of the present invention may be implemented, belong to the scope of protection of the present invention.
As an embodiment of the present invention, in the present embodiment, porous SiNxLayer 4 is noncrystalline, porous SiNxLayer, with a thickness of
10nm, aperture 200nm.As convertible embodiment of the invention, porous SiNX4 thickness of layer can also be 2nm-10nm, hole
Diameter can also be 20nm-100nm, and the purpose of the present invention may be implemented, belong to the scope of protection of the present invention.
As an embodiment of the present invention, in the present embodiment, the GaN hexagonal pyramid is Si doping, is highly
380nm, diameter 400nm.As convertible embodiment of the invention, GaN hexagonal pyramid height can also be 200nm-900nm,
Diameter can also be 200nm-900nm, and the purpose of the present invention may be implemented, belong to the scope of protection of the present invention.
As an embodiment of the present invention, in the present embodiment, multiple quantum well layer 6 is InGaN/GaN multiple quantum well layer, partly
With a thickness of 2nm, GaN barrier layer thickness is 10nm for InGaN well layer on polarity (10-11) crystal face, the period 5, is measured on hexagonal pyramid rib
The length of sub-line 7 is 400nm, and the size of apex quantum dot 8 is about in ten nanometers.As convertible implementation of the invention
Example, InGaN well layer thickness can also be 2nm-10nm, GaN barrier layer thickness can also be 10nm-30nm, period 3-10,
To achieve the object of the present invention, belong to the scope of protection of the present invention.
As an embodiment of the present invention, in the present embodiment, p-type GaN filled layer 5 is the p-type GaN filling of Mg doping
Layer, filling thickness 500nm；As convertible embodiment of the invention, growth thickness can also be 300nm-1000nm,
It achieves the object of the present invention, belongs to the scope of protection of the present invention.
A kind of LED epitaxial structure based on GaN hexagonal pyramid array, includes the following steps:
S1, forming core layer, undoped GaN layer 2 and n-type GaN layer 3 are grown on substrate 1；
Substrate 1 selects commercial 2 cun of Sapphire Substrates, and the growth temperature of GaN forming core layer is 520 DEG C -570 DEG C, and pressure is
400mbar-800mbar, time 100s-200s；The growth temperature of undoped GaN layer 2 is 1000 DEG C -1100 DEG C, and pressure is
200mbar-400mbar, time are 4000s-5000s with a thickness of 2 μm -3 μm;The growth temperature of n-type GaN layer 3 be 1000 DEG C-
1100 DEG C, pressure 100mbar-200mbar, time 1000s-2000s, with a thickness of 1 μm -3 μm.As of the invention one
Embodiment, in the present embodiment, it is 530 DEG C, pressure 600mbar, time 158s that GaN, which is nucleated layer growth temperature,；Undoped GaN
The growth temperature of layer 2 is 1055 DEG C, pressure 300mbar, time 4800s；3 growth temperature of n-type GaN layer is 1060 DEG C, pressure
Power is 150mbar, time 1600s.
S2, porous SiN is grown in the n-type GaN layer 3xLayer 4；
Silicon source is SiH4, nitrogen source NH3, carrier gas H2, growth temperature is 1000 DEG C -1100 DEG C, pressure 133mbar, growth
Time 100s-200s, later in NH3400s-600s is annealed under atmosphere as an embodiment of the present invention, in the present embodiment,
Growth temperature is 1020 DEG C, growth time 150s, annealing time 500s.
S3, in the porous SiNxGrowing n-type GaN hexagonal pyramid at 4 hole of layer；
Gallium source is TMGa, silicon source SiH4, nitrogen source NH3, H2For carrier gas, growth temperature is 980 DEG C -1100 DEG C, and pressure is
600mbar, V/III than being 10-200, growth time 3600s-4800s.As an embodiment of the present invention, the present embodiment
In, growth time is 1075 DEG C, and V/III than being 150, growth time 4000s.
S4, multiple quantum well layer 6, quantum wire 7 and quantum dot 8 are grown on each face of hexagonal pyramid；
Gallium source is TEGa, nitrogen source NH3, N2As carrier gas, growth temperature is 800 DEG C -860 DEG C, and chamber pressure is
400mbar grows 700s-1200s, obtains GaN barrier layer；Using TEGa as gallium source, TMIn is indium source, NH3For nitrogen source, N2For carrier gas,
Growth temperature is 690 DEG C -760 DEG C, pressure 400mbar, growth time 400s-700s, obtains InGaN well layer, quantum wire 7
Be respectively formed in 6 growth course of multiple quantum well layer with quantum dot 8 on the apex of hexagonal pyramid and six ribs.As the present invention
One embodiment, in the present embodiment, barrier layer growth temperature is 850 DEG C, time 1000s, and well layer growth temperature is 720 DEG C,
Growth time is 600s.
S5, it is filled at the top of hexagonal pyramid with p-type GaN filled layer 5, finally grows up to plane.
Using TEGa as gallium source, NH3As nitrogen source, H2As carrier gas, growth temperature is 900 DEG C -1000 DEG C, reacts chamber pressure
Power is 400mbar, growth time 900s-2700s.The annealing process time is 900s, and annealing temperature is 930 DEG C.As this hair
Bright one embodiment, in the present embodiment, growth temperature is 920 DEG C, growth time 1300s.
The preparation method of LED epitaxial structure of the present invention based on GaN hexagonal pyramid array is simply easily implemented, not only work
Skill is at low cost, and can effectively ensure that product yield.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
Variation is still in the protection scope of this invention.
Claims (9)
1. a kind of LED epitaxial structure based on GaN hexagonal pyramid array, it is characterised in that: including substrate, forming core layer, undoped GaN
Layer, n-type GaN layer and the porous SiN in the n-type GaN layerxLayer；It further include being formed in the porous SiNxAt layer hole
N-shaped GaN hexagonal pyramid array, and quantum wire on the quantum dot of hexagonal pyramid apex, six ribs of hexagonal pyramid and six
Multiple quantum well layer on six semi-polarity (10-11) crystal faces of pyramid, is finally p-type GaN filled layer.
2. the LED epitaxial structure according to claim 1 based on GaN hexagonal pyramid array, it is characterised in that: described undoped
GaN layer is with a thickness of 2 μm -3 μm, and the n-type GaN layer is with a thickness of 1 μm -3 μm.
3. the LED epitaxial structure according to claim 1 or 2 based on GaN hexagonal pyramid array, it is characterised in that: described more
Hole SiNxLayer is the SiN of noncrystalline, porous structurex, with a thickness of 2nm-15nm, aperture is 20 nm -100nm.
4. the LED epitaxial structure according to claim 1 or 2 based on GaN hexagonal pyramid array, it is characterised in that: the N-shaped
GaN hexagonal pyramid is Si doping, is highly 200nm-900nm, diameter 200nm-900nm.
5. the LED epitaxial structure according to claim 1 or 2 based on GaN hexagonal pyramid array, it is characterised in that: described more
Quantum well layer is InGaN/GaN multiple quantum well layer, and for InGaN well layer with a thickness of 2nm-10nm, GaN barrier layer thickness is 10nm-30nm,
Period is 3-10.
6. the LED epitaxial structure according to claim 1 or 2 based on GaN hexagonal pyramid array, it is characterised in that: the N-shaped
Region in ten nanometers of GaN hexagonal pyramid top has also appeared the quantum dot of rich In, richness then occurs on the rib of hexagonal pyramid
The quantum wire of In.
7. the LED epitaxial structure according to claim 1 or 2 based on GaN hexagonal pyramid array, it is characterised in that: the p-type
GaN filled layer is the p-type GaN filled layer of Mg doping, filling thickness 300nm-1000nm.
8. a kind of preparation method of the LED epitaxial structure based on GaN hexagonal pyramid array, is used to prepare as claim 1-7 is any
The LED epitaxial structure based on GaN hexagonal pyramid array described in, which comprises the steps of:
S1, forming core layer, undoped GaN layer and n-type GaN layer are grown on substrate；
S2, porous SiN is grown in the n-type GaN layerxLayer；
S3, in the porous SiNxGrowing n-type GaN hexagonal pyramid array at the hole of layer；
S4, growth quantum point, quantum wire, quantum well layer at six semi-polarity face different locations of hexagonal pyramid；
S5, entire three-dimensional structure is filled with p-type GaN filled layer, finally grows up to plane.
9. the preparation method of the LED epitaxial structure according to claim 8 based on GaN hexagonal pyramid array, which is characterized in that
In the step S1, the growth temperature of the forming core layer is 520 DEG C -570 DEG C, and the growth temperature of the undoped GaN layer is
1000 DEG C -1100 DEG C, with a thickness of 2 μm -3 μm；The growth temperature of the n-type GaN layer is 1000 DEG C -1100 DEG C, with a thickness of 1 μm -3
μm；
In the step S2, the porous SiNxThe growth conditions of layer are as follows: silicon source SiH4, nitrogen source NH3, carrier gas H2, growth
Temperature is 1000 DEG C -1100 DEG C, pressure 133mbar, growth time 100s-200s, later NH again3Anneal 400s- under atmosphere
600s；
In the step S3, the growth conditions of the N-shaped GaN hexagonal pyramid array are as follows: gallium source is TMGa, silicon source SiH4, nitrogen source is
NH3, H2For carrier gas, growth temperature is 980 DEG C -1100 DEG C, and pressure 600mbar, V/III is 10-200, and growth time is
3600s-4800s；
In the step S4, the growing method of the quantum dot, quantum wire, quantum well layer are as follows: gallium source is TEGa, nitrogen source NH3,
N2As carrier gas, growth temperature is 800 DEG C -860 DEG C, chamber pressure 400mbar, after growing 700s-1200s, obtains GaN
Barrier layer；Using TEGa as gallium source, TMIn is indium source, NH3For nitrogen source, N2For carrier gas, growth temperature is 690 DEG C -760 DEG C, reacts chamber pressure
Power is 400mbar, after growing 400s-700s, obtains InGaN well layer；Quantum dot and quantum wire during quantum trap growth
It is respectively formed on hexagonal pyramid top and rib；
In the step S5, the growing method of the p-type GaN filled layer are as follows: using TEGa as gallium source, NH3As nitrogen source, H2Make
For carrier gas, growth temperature is 900 DEG C -1000 DEG C, chamber pressure 400mbar, growth time 900s-2700s；It is annealed
The journey time is 900s, and annealing temperature is 930 DEG C.
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