CN107316851A - A kind of high-power silicon controlled rectifier radiator - Google Patents
A kind of high-power silicon controlled rectifier radiator Download PDFInfo
- Publication number
- CN107316851A CN107316851A CN201710698143.8A CN201710698143A CN107316851A CN 107316851 A CN107316851 A CN 107316851A CN 201710698143 A CN201710698143 A CN 201710698143A CN 107316851 A CN107316851 A CN 107316851A
- Authority
- CN
- China
- Prior art keywords
- fin
- support plate
- plate
- thickness
- card adapter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4093—Snap-on arrangements, e.g. clips
Abstract
The present invention relates to a kind of high-power silicon controlled rectifier radiator, including main support plate, the cross sectional shape of main support plate is isosceles trapezoidal structure, and the both sides of main support plate are respectively equipped with a curved support plate, and the outside of curved support plate is provided with a card adapter plate；The first fin is sequentially provided with the lower surface of curved support plate from the outside to the core, second fin and the 3rd fin, first fin, the thickness of second fin and the 3rd fin increases successively from bottom to top, the bottom surface of first fin and the bottom surface of card adapter plate are flush, the bottom surface of 3rd fin and the bottom surface of main support plate are flush, the upper surface of curved support plate is sequentially provided with the 4th fin that the top surface of top surface and card adapter plate is flush from the outside to the core, 5th fin, 6th fin, 7th fin, 8th fin and the 9th fin, convenient disassembly, good heat dissipation effect, and cost is low.
Description
Technical field
The present invention relates to a kind of radiator, more particularly to a kind of high-power silicon controlled rectifier radiator.
Background technology
Controllable silicon, is the abbreviation of silicon controlled rectifier, is a kind of high-power half of the four-layer structure with three PN junctions
Conductor device, also known as IGCT.With small volume, structure is relatively easy, function is strong the features such as, be the more commonly used semiconductor
One of device.Controllable silicon operationally, can produce amount of heat, it is necessary to coordinate one piece of radiator to use, at present, in dissipating for using
Hot device is full copper radiator, and radiating effect is poor, and dismounting is complicated, is unfavorable for finishing.
The content of the invention
The present invention proposes a kind of high-power silicon controlled rectifier radiator regarding to the issue above, convenient disassembly, good heat dissipation effect,
And cost is low.
Specific technical scheme is as follows：
A kind of high-power silicon controlled rectifier radiator, including main support plate, the cross sectional shape of main support plate is isosceles trapezoid knot
Structure, the both sides of main support plate are respectively equipped with a curved support plate, and the outside of curved support plate is provided with a card adapter plate；Arc branch
The section of the lower surface of fagging is the arc structure caved inward, and the section of the upper surface of curved support plate is outstanding circle
The first fin, the second fin and the 3rd fin are sequentially provided with arc structure, the lower surface of curved support plate from the outside to the core,
The thickness of first fin, the second fin and the 3rd fin increases successively from bottom to top, the bottom surface of the first fin and card
The bottom surface of fishplate bar is flush, and the bottom surface of the 3rd fin and the bottom surface of main support plate are flush, and the upper surface of curved support plate is certainly
The 4th fin, the 5th fin, the 6th fin, the 7th fin, the 8th fin and the 9th is sequentially provided with outside to inside to dissipate
Backing, the 4th fin, the 5th fin, the 6th fin, the 7th fin, the top surface of the 8th fin and the 9th fin
Top surface with card adapter plate is flush, and the thickness of the 4th fin, the 6th fin and the 8th fin gradually subtracts from top to bottom
Small, the thickness of the 5th fin, the 7th fin and the 9th fin gradually increases from top to bottom；The top surface of the card adapter plate and
It is respectively equipped with ground on first buckling groove, the lateral wall of card adapter plate symmetrical provided with two the second buckling grooves, the first card
The cross sectional shape of access slot and the second buckling groove is T-shaped structure.
A kind of above-mentioned high-power silicon controlled rectifier radiator, wherein, it is perpendicular between the first fin and the second fin bottom
Straight distance is h1, and the vertical distance between the second fin and the 3rd fin is h2, h1=h2.
A kind of above-mentioned high-power silicon controlled rectifier radiator, wherein, first fin, the second fin and the 3rd radiating
The thickness of piece bottom surface is L1, and the top thickness of the 4th fin, the 6th fin and the 8th fin is L2, and described the
The top thickness of five fin, the 7th fin and the 9th fin is L3, L2：L1：L3=4：2：1.
A kind of above-mentioned high-power silicon controlled rectifier radiator, wherein, provided with three heat dissipation channels in the main support plate, radiating
The section of passage is regular hexagon structure, coaxial provided with the support ring that a section is cirque structure, branch in heat dissipation channel
It is uniform on the outer wall of pushing out ring to fix three the first supporting plates, the other end of the first supporting plate vertically be fixed on heat dissipation channel inwall
On, provided with second supporting plate between two adjacent the first supporting plates, second supporting plate one end vertically be fixed on radiating
In vias inner walls, the other end is in contact with support ring.
Beneficial effects of the present invention are：
The present invention, convenient disassembly, good heat dissipation effect and cost is low, heat dissipation channel further adds dissipating for radiator
Thermal effect and shock-proof effect, further increase security performance.
Brief description of the drawings
Fig. 1 is sectional view of the present invention.
Fig. 2 is heat-dissipating channel structure figure of the present invention.
Embodiment
To make technical scheme become apparent from clearly, the present invention is described further below in conjunction with the accompanying drawings,
It is any that guarantor of the present invention is each fallen within to the scheme that the technical characteristic progress equivalencing of technical solution of the present invention and conventional reasoning are drawn
Protect scope.
In the description of the invention, it is necessary to explanation, term " " center ", " on ", " under ", "left", "right", " vertical ",
The orientation or position relationship of the instruction such as " level ", " interior ", " outer " be based on orientation shown in the drawings or position relationship, merely to
Be easy to the description present invention and simplify description, rather than indicate or imply signified device or element must have specific orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.In addition, term " first ", " second ",
" the 3rd " is only used for describing purpose, and it is not intended that indicating or implying relative importance.
Reference
Main support plate 1, curved support plate 2, card adapter plate 3, the first fin 4, the second fin 5, the 3rd fin 6,
Four fin 7, the 5th fin 8, the 6th fin 9, the 7th fin 10, the 8th fin 11, the 9th fin 12, first
Buckling groove 13, the second buckling groove 14, heat dissipation channel 15, support ring 16, the first supporting plate 17, the second supporting plate 18.
A kind of high-power silicon controlled rectifier radiator, including main support plate 1 as shown in the figure, the cross sectional shape of main support plate for etc.
Waist trapezium structure, the both sides of main support plate are respectively equipped with a curved support plate 2, and the outside of curved support plate is provided with a clamping
Plate 3；The section of the lower surface of curved support plate is the arc structure caved inward, the section of the upper surface of curved support plate be to
The first fin 4, the second fin 5 are sequentially provided with the arc structure of outer protrusion, the lower surface of curved support plate from the outside to the core
With the 3rd fin 6, the thickness of the first fin, the second fin and the 3rd fin increases successively from bottom to top, and first dissipates
The bottom surface of backing and the bottom surface of card adapter plate are flush, and the bottom surface of the 3rd fin and the bottom surface of main support plate are flush, arc branch
The upper surface of fagging be sequentially provided with from the outside to the core the 4th fin 7, the 5th fin 8, the 6th fin 9, the 7th fin 10,
8th fin 11 and the 9th fin 12, the 4th fin, the 5th fin, the 6th fin, the 7th fin, the 8th dissipate
Top surface of the top surface of backing and the 9th fin with card adapter plate is flush, the 4th fin, the 6th fin and the 8th radiating
The thickness of piece is gradually reduced from top to bottom, and the thickness of the 5th fin, the 7th fin and the 9th fin is from top to bottom gradually
Increase；It is respectively equipped with the top surface of the card adapter plate and ground on first buckling groove 13, the lateral wall of card adapter plate symmetrical
Provided with two the second buckling grooves 14, the cross sectional shape of the first buckling groove and the second buckling groove is T-shaped structure.
Vertical distance between first fin and the second fin bottom is h1, the second fin and the 3rd radiating
Vertical distance between piece is h2, h1=h2.
First fin, the second fin and the thickness of the 3rd fin bottom surface are L1, the 4th fin,
The top thickness of 6th fin and the 8th fin is L2, the 5th fin, the 7th fin and the 9th fin
Top thickness is L3, L2：L1：L3=4：2：1.
Provided with three heat dissipation channels 15 in the main support plate, the section of heat dissipation channel is regular hexagon structure, and radiating is logical
Coaxial being provided with the support ring 16 that a section is cirque structure, the outer wall of support ring uniformly fixes three first in road
Angle between fagging 17, two neighboring first supporting plate is 120 °, the other end of the first supporting plate vertically be fixed on radiating
In vias inner walls, provided with second supporting plate 18 between two adjacent the first supporting plates, second supporting plate one end is vertical
It is fixed on heat dissipation channel inwall, the other end is in contact with support ring.
Claims (4)
1. a kind of high-power silicon controlled rectifier radiator, it is characterized in that, including main support plate, the cross sectional shape of main support plate is isosceles
Trapezium structure, the both sides of main support plate are respectively equipped with a curved support plate, and the outside of curved support plate is provided with a card adapter plate；
The section of the lower surface of curved support plate is the arc structure caved inward, and the section of the upper surface of curved support plate is to evagination
The first fin, the second fin and the 3rd are sequentially provided with the arc structure gone out, the lower surface of curved support plate from the outside to the core
Fin, the thickness of the first fin, the second fin and the 3rd fin increases successively from bottom to top, the bottom of the first fin
Face and the bottom surface of card adapter plate are flush, and the bottom surface of the 3rd fin and the bottom surface of main support plate are flush, curved support plate it is upper
Surface be sequentially provided with from the outside to the core the 4th fin, the 5th fin, the 6th fin, the 7th fin, the 8th fin and
9th fin, the 4th fin, the 5th fin, the 6th fin, the 7th fin, the 8th fin and the 9th fin
Top surface of the top surface with card adapter plate be flush, the thickness of the 4th fin, the 6th fin and the 8th fin is from top to bottom
It is gradually reduced, the thickness of the 5th fin, the 7th fin and the 9th fin gradually increases from top to bottom；The card adapter plate
It is respectively equipped with top surface and ground on first buckling groove, the lateral wall of card adapter plate symmetrically provided with two the second buckling grooves,
The cross sectional shape of first buckling groove and the second buckling groove is T-shaped structure.
2. a kind of high-power silicon controlled rectifier radiator as claimed in claim 1, it is characterized in that, the first fin and the second radiating
Vertical distance between piece bottom is h1, and the vertical distance between the second fin and the 3rd fin is h2, h1=h2.
3. a kind of high-power silicon controlled rectifier radiator as claimed in claim 1, it is characterized in that, first fin, second
Fin and the thickness of the 3rd fin bottom surface are L1, the top of the 4th fin, the 6th fin and the 8th fin
Face thickness is L2, and the top thickness of the 5th fin, the 7th fin and the 9th fin is L3, L2：L1：L3=4：2：
1。
4. a kind of high-power silicon controlled rectifier radiator as claimed in claim 1, it is characterized in that, three are provided with the main support plate
Individual heat dissipation channel, the section of heat dissipation channel is that the section that is provided with coaxial in regular hexagon structure, heat dissipation channel is annular
It is uniform on the support ring of structure, the outer wall of support ring to fix three the first supporting plates, the other end of the first supporting plate consolidating vertically
It is scheduled on heat dissipation channel inwall, provided with second supporting plate, second supporting plate one end between two adjacent the first supporting plates
Vertical is fixed on heat dissipation channel inwall, and the other end is in contact with support ring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710698143.8A CN107316851A (en) | 2017-08-15 | 2017-08-15 | A kind of high-power silicon controlled rectifier radiator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710698143.8A CN107316851A (en) | 2017-08-15 | 2017-08-15 | A kind of high-power silicon controlled rectifier radiator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107316851A true CN107316851A (en) | 2017-11-03 |
Family
ID=60177098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710698143.8A Withdrawn CN107316851A (en) | 2017-08-15 | 2017-08-15 | A kind of high-power silicon controlled rectifier radiator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107316851A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108633230A (en) * | 2018-06-26 | 2018-10-09 | 江苏英杰电子器件有限公司 | A kind of radiator that heat absorption capacity is fabulous |
-
2017
- 2017-08-15 CN CN201710698143.8A patent/CN107316851A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108633230A (en) * | 2018-06-26 | 2018-10-09 | 江苏英杰电子器件有限公司 | A kind of radiator that heat absorption capacity is fabulous |
| CN108633230B (en) * | 2018-06-26 | 2023-12-12 | 江苏英杰电子器件有限公司 | Radiator with excellent heat absorption performance |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20100270007A1 (en) | Heat sink | |
| JP6582058B2 (en) | Heat exchanger and heat management equipment for battery of electric vehicle or hybrid vehicle | |
| CN108028324A (en) | Cooling fins for battery cooling circuit | |
| US20190323779A1 (en) | Heat sink | |
| US20180317342A1 (en) | Base plate for heat sink as well as heat sink and igbt module having the same | |
| KR100981155B1 (en) | Heat sink | |
| CN107316851A (en) | A kind of high-power silicon controlled rectifier radiator | |
| CN207199605U (en) | A kind of high-power silicon controlled rectifier radiator | |
| US10544993B2 (en) | Cooling device with a plurality of pipe units connected to a common base | |
| US20190334218A1 (en) | Battery module | |
| JP6715338B2 (en) | Spiral fin condenser | |
| JP5606494B2 (en) | Railway vehicle power converter | |
| CN107912005A (en) | A kind of cooled plate | |
| CN111862792B (en) | Display module and display device | |
| WO2019037392A1 (en) | Radiator, outdoor unit, and air conditioner | |
| CN207850136U (en) | A kind of modified cooler | |
| US20070272391A1 (en) | Heat dissipation device | |
| WO2016023280A1 (en) | Vapour deposition wire source | |
| CN207612522U (en) | A kind of cooled plate | |
| CN113179617B (en) | Inflation board radiator and frequency conversion equipment | |
| CN109065330A (en) | A kind of transformer heat sink and its production technology | |
| CN217363595U (en) | Heat radiator | |
| CN208063641U (en) | Radiator in high ferro | |
| CN210128406U (en) | Graphite alkene radiator | |
| CN207572500U (en) | A kind of coldplate of 21700 batteries of new-energy automobile |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20171103 |
|
| WW01 | Invention patent application withdrawn after publication |