CN107304130A - Dielectric composition, dielectric ceramics and capacitor - Google Patents
Dielectric composition, dielectric ceramics and capacitor Download PDFInfo
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- CN107304130A CN107304130A CN201610244671.1A CN201610244671A CN107304130A CN 107304130 A CN107304130 A CN 107304130A CN 201610244671 A CN201610244671 A CN 201610244671A CN 107304130 A CN107304130 A CN 107304130A
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- 239000000203 mixture Substances 0.000 title claims abstract description 79
- 239000003990 capacitor Substances 0.000 title claims description 32
- 239000000919 ceramic Substances 0.000 title claims description 17
- 150000001875 compounds Chemical class 0.000 claims abstract description 34
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 claims abstract description 24
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910002971 CaTiO3 Inorganic materials 0.000 claims abstract description 13
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 13
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 9
- 239000011572 manganese Substances 0.000 claims abstract description 9
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims abstract description 9
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 239000000395 magnesium oxide Substances 0.000 claims description 36
- 239000000377 silicon dioxide Substances 0.000 claims description 26
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 23
- 229910052681 coesite Inorganic materials 0.000 claims description 15
- 229910052906 cristobalite Inorganic materials 0.000 claims description 15
- 229910052682 stishovite Inorganic materials 0.000 claims description 15
- 229910052905 tridymite Inorganic materials 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 6
- 241000790917 Dioxys <bee> Species 0.000 claims description 2
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- 230000003068 static effect Effects 0.000 description 42
- 239000000843 powder Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 17
- 230000005684 electric field Effects 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000011575 calcium Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 238000003991 Rietveld refinement Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 229910052861 titanite Inorganic materials 0.000 description 4
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 3
- WEUCVIBPSSMHJG-UHFFFAOYSA-N calcium titanate Chemical compound [O-2].[O-2].[O-2].[Ca+2].[Ti+4] WEUCVIBPSSMHJG-UHFFFAOYSA-N 0.000 description 3
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229910017676 MgTiO3 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 235000012241 calcium silicate Nutrition 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052839 forsterite Inorganic materials 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910007562 Li2SiO3 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910017682 MgTi Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910009650 Ti1-yZry Inorganic materials 0.000 description 1
- JHXCINJSAAFBDH-UHFFFAOYSA-N [Ca].O[Si](O)(O)O Chemical compound [Ca].O[Si](O)(O)O JHXCINJSAAFBDH-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- OSMSIOKMMFKNIL-UHFFFAOYSA-N calcium;silicon Chemical compound [Ca]=[Si] OSMSIOKMMFKNIL-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000001605 fetal effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003682 vanadium compounds Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
- C04B35/22—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay rich in calcium oxide, e.g. wollastonite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
- C04B2235/3267—MnO2
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/61—Mechanical properties, e.g. fracture toughness, hardness, Young's modulus or strength
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Dielectric composition involved in the present invention is a kind of dielectric composition containing calcium titanium silicate, calcium titanate and the compound comprising manganese or the compound comprising vanadium.In the case of containing the compound comprising manganese, it is set as by the content of calcium titanium silicate with CaSiTiO5Progress is scaled a moles of %；The content of calcium titanate is set as with CaTiO3Progress is scaled b moles of %；The content of compound comprising manganese is set as with MnO2In the case that progress is scaled c moles of %, 23.4≤a≤75.0,21.0≤b≤76.4, c >=0.21, a+b+c=100.In the case of containing the compound comprising vanadium, it is set as by the content of calcium titanium silicate with CaSiTiO5Progress is scaled d moles of %；The content of calcium titanate is set as with CaTiO3Progress is scaled e moles of %；The content of compound comprising vanadium is set as with V2O5In the case that progress is scaled f moles of %, 23.0≤d≤61.7,37.9≤e≤76.8, f >=0.16, d+e+f=100.
Description
Technical field
The present invention relates to dielectric composition, dielectric ceramics and capacitor.
Background technology
In recent years, with the fast development of electronic unit for electronic unit and composition electronics
The requirement of the material of part becomes increasingly to improve.For example, for the electricity of the material as capacitor
Media compositions, high relative dielectric constant and excellent temperature characterisitic are not required nothing more than, also
Seek raising reliability.Then, it is desirable to by improving the reliability of dielectric composition so as to also can
Enough improve the durable years of capacitor.
Further, in order to reduce cost, also requiring the miniaturization of dielectric ceramics and without using high
Expensive rare earth element or harmful substance Pb etc..
On existing dielectric composition, recorded in patent document 1 relevant in regulation model
Contain CaTiO in enclosing3And CaTiSiO5Contain as basis, and in prescribed limit
B2O3、SiO2And at least one or more metal oxide is used as the dielectric ceramics of adding ingredient
The invention of composition.
In addition, having been recorded in patent document 2 about containing CaTiO in prescribed limit3And
CaTiSiO5As basis, and contain in prescribed limit Li2O、SiO2And at least
More than a kind metal oxide as the dielectric ceramic composition of adding ingredient invention.
Further, recorded in patent document 3 it is relevant relative to by
{(Sr1-xCax)O}k{(Ti1-yZry)O2Represent principal component addition Li2SiO3And it is at least one kind of with
The invention of the dielectric ceramic composition of upper alkali earth metal fluoride.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Application 62-222513
Patent document 2：Japanese Unexamined Patent Application 62-222514
Patent document 3：Japanese Unexamined Patent Publication 11-340075
The content of the invention
There is desired relative dielectric constant and direct capacitance it is an object of the invention to provide a kind of
The temperature characterisitic of amount is good, though it is further excellent relative to the resistance to pressure of high alternating voltage and
Applying high-temperature load also will not rupture plain tire, and static capacity change is small, electricity Jie of high reliability
Matter composition, the present invention also aims to provide a kind of electricity being made up of the dielectric composition
Media ceramic and the capacitor with the dielectric ceramics.
Solve the means of technical problem
In order to achieve the above object, the 1st invention of the application involved dielectric composition
It is characterised by：Containing calcium titanium silicate (calcium titanium silicate), calcium titanate and comprising
The compound of manganese, is set as with CaSiTiO by the content of calcium titanium silicate5Progress is scaled a and rubbed
You are %；The content of calcium titanate is set as with CaTiO3Progress is scaled b moles of %；It will include
The content of the compound of manganese is set as with MnO2In the case that progress is scaled c moles of %, 23.4
≤ a≤75.0,21.0≤b≤76.4, c >=0.21, a+b+c=100.
Involved dielectric composition preferably 0.21≤c≤4.0 of the 1st invention of the application.
Involved dielectric composition preferably 0.50≤c≤4.0 of the 1st invention of the application.
Involved dielectric composition preferably 1.00≤c≤4.0 of the 1st invention of the application.
In addition, in order to achieve the above object, the set of dielectrics involved by the 2nd invention of the application
Compound is characterised by：Compound containing calcium titanium silicate, calcium titanate and comprising vanadium, is being incited somebody to action
The content of calcium titanium silicate is set as with CaSiTiO5Progress is scaled d moles of %；By calcium titanate
Content is set as with CaTiO3Progress is scaled e moles of %；By the content of the compound comprising vanadium
It is set as with V2O5In the case that progress is scaled f moles of %, 23.0≤d≤61.7,37.9≤e
≤ 76.8, f >=0.16, d+e+f=100.
Involved dielectric composition preferably 0.16≤f≤0.57 of the 2nd invention of the application.
Dielectric composition involved by present invention due to containing calcium titanium silicate and
Both calcium titanates and the further composition containing manganese or vanadium in prescribed limit, so turning into
Temperature characterisitic with desired relative dielectric constant and static capacity is good, relative to
It is excellent in terms of the resistance to pressure of high alternating voltage, and will not also make plain tire even if high-temperature load is applied
Rupture, static capacity changes small, the dielectric composition of high reliability.
Further, dielectric composition involved in the present invention is due to 0.21≤c≤4.0 or 0.16
≤ f≤0.57 is so as to the feature improved with quality factor (Q).
In dielectric composition involved by present invention, the content of magnesium oxide can be
Carry out being scaled 0~18.1wt% (including 0wt%) with MgO, the content of silica can be
With SiO2It is scaled 0~12.9wt% (including 0wt%).
The content of magnesium oxide is being set to be scaled x (wt%) with MgO, by silica
Content is set to SiO2In the case that progress is scaled y (wt%), involved by the present application
Dielectric composition fully meets following formula (1)~formula (5)：
Y≤- 11.28x+204.27 ... formulas (1)；
Y≤- 0.40x+14.90 ... formulas (2)；
Y≤0.62x+9.80 ... formulas (3)；
X >=0 ... formula (4)；
Y >=0 ... formula (5).
The content of magnesium oxide is changed with MgO in dielectric composition involved by present invention
Calculate as 0~18.1wt% (including 0wt%)；Silica can be substantially free of.
The content of silica is in dielectric composition involved by present invention
0~10wt% (including 0wt%)；Magnesium oxide can be substantially free of.
In addition, dielectric ceramics involved in the present invention is made up of above-mentioned dielectric composition.
Further, capacitor involved in the present invention has above-mentioned dielectric ceramics and a pair of electrodes.
Embodiment
Illustrate the present invention below according to embodiment.
Dielectric composition involved by 1st embodiment contains silicon with the content in particular range
Sour calcium titanium, calcium titanate and the compound comprising manganese.
Specifically it is set as by the content of calcium titanium silicate with CaSiTiO5Progress is scaled a
(mol%)；The content of calcium titanate is set as with CaTiO3Progress is scaled b (mol%)；
The content of compound comprising manganese is set as with MnO2Progress is scaled c (mol%) feelings
Following formula is met under condition.
23.4≤a≤75.0；
21.0≤b≤76.4；
c≥0.21；
A+b+c=100.
Dielectric composition involved by present embodiment by way of meeting above-mentioned formula to contain
There is each composition, so that as the temperature with desired relative dielectric constant and static capacity
Characteristic meets the SL characteristics of JIS standards, is showed in terms of the resistance to pressure relative to high alternating voltage
It is excellent, and even if apply high-temperature load will not also make the rupture of plain tire, static capacity change it is small,
The dielectric composition of high reliability.
It is any in above-mentioned various characteristics in the case where a, b or c are unsatisfactory for above-mentioned mathematical expression
More than one can be deteriorated.
For example, in the case where a is too low, the temperature characterisitic of static capacity is unsatisfactory for JIS standards
SL characteristics.In the case where a is too high, the temperature characterisitic for not only having static capacity is unsatisfactory for JIS
The situation of the SL characteristics of standard, and the change of the static capacity as caused by high-temperature load can also become
Greatly.
In the case where b is too low, the temperature characterisitic for not only having static capacity is unsatisfactory for JIS standards
SL characteristics situation, and the change of the static capacity as caused by high-temperature load can also become big.
In the case where b is too high, the temperature characterisitic of static capacity can be unsatisfactory for the SL characteristics of JIS standards.
In the case where c is too low, the change of the static capacity as caused by high-temperature load becomes big.Separately
Outside, c is preferably more than 0.50, and more preferably more than 1.00.
In addition, there is no the upper limit for the c in present embodiment, usual c≤12.0.Further,
By the way that c controls are improved into quality factor (Q) in c≤4.0.
Calcium titanium silicate (CaSiTiO is included in the dielectric composition involved by present embodiment5)
Crystallization and calcium titanate (CaTiO3) crystallization.This can be analyzed by XRD Rietveld
(X-Ray Diffraction Rietveld analysis) confirms.Further, a, b, c value
It can also be confirmed by XRD Rietveld analyses.A, b, c value are generally before burning till
Substantial change will not occur afterwards.
Dielectric composition involved by 2nd embodiment contains silicon with the content in particular range
Sour calcium titanium, calcium titanate and the compound comprising vanadium.
Specifically, it is set as by the content of calcium titanium silicate with CaSiTiO5Progress is scaled d
(mol%)；The content of calcium titanate is set as with CaTiO3Progress is scaled e (mol%)；
The content of compound comprising vanadium is set as with V2O5Progress is scaled f (mol%) situation
Under, meet following formula：
23.0≤d≤61.7；
37.9≤e≤76.8；
f≥0.16；
D+e+f=100.
Dielectric composition involved by present embodiment by way of meeting above-mentioned formula to contain
There is each composition, so that as the temperature with desired relative dielectric constant and static capacity
Characteristic meets the SL characteristics of JIS standards, is showed in terms of the resistance to pressure relative to high alternating voltage
It is excellent, and even if apply high-temperature load will not also make the rupture of plain tire, static capacity change it is small,
The dielectric composition of high reliability.
It is any in above-mentioned various characteristics in the case where d, e and f are unsatisfactory for above-mentioned mathematical expression
More than one can be deteriorated.
In the case where d, e are too low or it is too high in the case of, the temperature characterisitic of static capacity is all
The SL characteristics of JIS standards will not be met.
In the case where f is too low, the change of the static capacity as caused by high-temperature load becomes big.
In addition, the content (that is, f) of the compound containing vanadium is without the upper limit, but generally f≤2.0.
Further, by the way that f controls are improved into quality factor (Q) in f≤0.57.
Calcium titanium silicate (CaSiTiO is included in the dielectric composition involved by present embodiment5)
Crystallization and calcium titanate (CaTiO3) crystallization.This can be analyzed by XRD Rietveld
(X-Ray Diffraction Rietveld analysis) confirms.Further, d, e, f value
It can also be analyzed by XRD Rietveld analyses.Generally, d, e, f value are before burning till
After will not occur substantial change.
Involved by the dielectric composition and the 2nd embodiment involved by the 1st embodiment
Dielectric composition in, the compound comprising manganese and the compound comprising vanadium can also be contained
Both.
Below in the case where being only designated as " present embodiment ", refer to the 1st embodiment and
Both 2nd embodiments.
Calcium titanium silicate in present embodiment is can be expressed as CaSiTiO5And CaTiSiO5Deng
Compound, and be that Ca is calculated as with atomicity ratio:Si:Ti:O=1:1:1:5 compound.In addition,
Calcium titanium silicate in present embodiment may be called with various titles.For example, it may be possible to
Can be with silicon calcium titanate, silicic acid calcium titanate, metatitanic acid calcium silicates, titanium sphene (titanite), aspidelite
(Sphene) the title address such as.In addition, represented with title, chemical formula outside above-mentioned etc.
As long as compound atomicity ratio is Ca:Si:Ti:O=1:1:1:5 are then all contained in present embodiment
Calcium titanium silicate.
Calcium titanate in present embodiment is can be with CaTiO3The compound of expression, and be atom
Number ratio is calculated as Ca:Ti:O=1:1:3 compound.In addition, with the title outside above-mentioned, chemical formula
As long as the compound atomicity ratio Deng expression is Ca:Ti:O=1:1:3 are then all contained in calcium titanate.
In the dielectric composition involved by present embodiment, it can also be entered according to application target
One step contains except calcium titanium silicate, calcium titanate, the compound comprising manganese and/or comprising vanadium
Compound outside compound.For example, magnesium oxide, titanium oxide (TiO can be contained2), two
Silica (SiO2) etc..For magnesium oxide, also include in addition to magnesia (MgO)
Composite oxides (such as MgTi containing magnesium2O5、Mg2SiO4、MgTiO3Deng).For this
The content of a little compounds is not particularly limited, but is set by dielectric composition entirety
In the case of for 100wt%, below 30.0wt% is preferably added up to.In addition, magnesium oxide contains
Amount is the content converted with MgO.
Especially, in the case of containing magnesium oxide, can further it reduce by high-temperature load
The change of caused static capacity.In the case of containing titanium oxide, IR can be improved.Containing
It can further reduce the temperature change of static capacity in the case of having silica.Further,
The resistance to pressure relative to high alternating voltage can also be improved.
The content of magnesium oxide with MgO converted preferably below 18.1wt% (including
0wt%), particularly preferably 6.0~18.1wt%.In addition, the content in magnesium oxide is 18.1wt%
Silica can be substantially free of in the case of below.
The content of silica is with SiO2Converted preferably below 10wt% (including 0wt%),
Particularly preferably 6.0~10.0wt%.In addition, the content in silica is below 10.0wt%'s
In the case of can be substantially free of magnesium oxide.
In addition, the content of magnesium oxide is being set to be scaled x (wt%) with MgO, by dioxy
The content of SiClx is set to SiO2In the case that progress is scaled y (wt%), preferably completely meet
Following formula (1)~formula (5)：
Y≤- 11.28x+204.27 ... formulas (1)；
Y≤- 0.40x+14.90 ... formulas (2)；
Y≤0.62x+9.80 ... formulas (3)；
X >=0 ... formula (4)；
Y >=0 ... formula (5).
By fully meeting above-mentioned formula (1)~formula (5), relative dielectric constant is readily obtained, quiet
Static capacity rate of change after the temperature characterisitic of capacitance, high-temperature load, relative to high exchange
The complete excellent dielectric composition of the resistance to pressure and insulaion resistance of voltage.
Especially, in the case of the formula that meets (2), relative dielectric constant is easily suitably controlled.
Especially, in the case of the formula that meets (1) and formula (2), phase is easily suitably controlled
To dielectric constant and the temperature characterisitic of static capacity.
Especially, in the case of the formula that meets (3), easily suitably after control high temperature load
Static capacity rate of change.
But, it is not suitable for energetically adding for lithium, boron.Set by dielectric composition entirety
In the case of being set to 100wt%, lithium, the content of boron are respectively with Li2O、B2O3Carry out conversion excellent
Elect below 0.4wt% as.In the case where largely containing lithium, boron, inclining for reliability reduction is had
To.In addition, the resistance to pressure having relative to alternating voltage is deteriorated and insulaion resistance is also reduced
Tendency.
In addition, in the case where adding lithium, the change of static capacity when high-temperature load is applied
Change the tendency for having and becoming big.Further, Q values also have the tendency of reduction.
In addition, in the case where adding boron, the temperature characterisitic of static capacity also has inclining for variation
To.In the case where applying high-temperature load, the change of static capacity has the tendency for becoming big.Enter one
Step, Q values also have the tendency of reduction.
Further, even if the dielectric composition involved by present embodiment contains substantially no lanthanum
Can also have good characteristic Deng harmful substances such as rare earth element and lead.In addition, so-called " real
Do not contained in matter " refer to the content in the case where dielectric composition entirety is set as into 100wt%
For below 0.01wt%.
, can be according to making in addition, the shape for dielectric composition is not particularly limited
Free shape is set with purpose.
Below for the dielectric composition involved by present embodiment, dielectric ceramics and electricity
The manufacture method of container is illustrated, but dielectric composition, dielectric ceramics and electric capacity
The manufacture method of device is not limited to following methods.
First, the material powder of the dielectric composition involved by present embodiment is prepared.As
Material powder, prepares the compound of each composition or can turn into the compound of each composition by burning till
Powder.In each composition, for calcium titanium silicate (CaSiTiO5) and calcium titanate (CaTiO3),
It is preferred that preparing calcium silicates titanium powder and metatitanic acid calcium powder at the time of raw material is prepared.For other
Composition is such as the compound comprising manganese, comprising the compound of vanadium, except the oxide of each element
Outside, it can also prepare that the compound of the oxide of each element can be turned into after burning till, for example
Carbonate, nitrate, sulfate etc..
Then, by mixing the material powder of each composition so as to obtain mixed-powder.For mixing
Method is not limited especially, can use commonly used method such as dry type mixing,
Wet mixed etc..
Then, above-mentioned mixed-powder is granulated and obtains prilling powder.For prilling process
It is not particularly limited.For example, have PVA (polyvinyl alcohol) aqueous solution is made an addition to it is above-mentioned
Mixed-powder is so as to the method granulated.In addition, in order to remove thick make after granulation
Grain powder can be sieved.
Next, prilling powder is molded and obtained the formed body being made up of dielectric composition.
Had no particular limits for forming method, commonly used method can be used.For example may be used
To use extrusion forming method.Pressure during for pressurization is not particularly limited, for example can be with
Apply 250~550MPa pressure.
Then, by burning till obtained formed body so as to obtain what is be made up of dielectric composition
Sintered body (dielectric ceramics).It is not particularly limited for firing condition.Firing temperature can
To be set to 1150~1300 DEG C.Also had no particular limits for firing atmosphere.For example can be in sky
In gas, in blanket of nitrogen or use in the reducing atmosphere of nitrogen and hydrogen, can also be at it
In his atmosphere.
Further, by the way that a pair of electrodes is engaged in into obtained sintered body so as to can just obtain
Capacitor.A pair of electrodes is for example engaged on relative 2 face of obtained sintered body.
In addition, for electrode engagement is not had into special limit in the method for the sintered body obtained
System, for example can be by being coated on obtained sintered body and under the high temperature conditions by electrode pastes
Carry out burning attached, so that just can be by electrode engagement in the sintered body obtained.
The purposes of dielectric composition and dielectric ceramics involved by present embodiment is not limited
Due to capacitor.
In addition, illustrate in the above description be by the capacitor fabrication involved by present embodiment
The method of single panel type capacitor, but the capacitor of the present invention is not limited to single panel type capacitor,
It can also be the capacitor beyond the single panel type capacitor such as multilayer capacitor.For cascade type electricity
The manufacture method of container etc. has no particular limits, and can use known manufacture method.
Embodiment
Hereinafter, detailed embodiment is based further on to further illustrate the present invention, but this hair
It is bright to be not limited to these embodiments.
(embodiment 1)
Prepare CaSiTiO as material powder5Powder, CaTiO3Powder, MnO2Powder, and
Carried out in the form of the embodiment and the sintered body of the composition of comparative example being finally made shown in table 1
Weigh.For a, b, c of table 1, the 2nd after decimal point is rounded up respectively.But
Be, in order to whether clear and definite c is more than 0.21 and by the after decimal point the 3rd in the case of c≤0.24
Position is rounded up.Therefore, there is the sample that a+b+c is not 100.00.
Then, each material powder is subjected to wet mixed.For wet mixed, employ and use
The ball mill of zirconia ball.Solvent for wet mixed is ion exchange water.Then, dry
Raw material after wet mixed simultaneously obtains dielectric composition powder.
Next, by the above-mentioned dielectric composition powder of 100 parts by weight by 10 parts by weight
PVA (polyvinyl alcohol) aqueous solution, which is made an addition in above-mentioned dielectric composition powder, to be granulated,
So as to obtain prilling powder.Above-mentioned prilling powder is sieved to remove thick prilling powder.
To after sieving prilling powder apply 396MPa pressure so that produce a diameter of 7.5mm,
Thickness is 0.7~0.8mm discoideus formed body.
Above-mentioned formed body is carried out at 1175~1250 DEG C in atmosphere and burnt till within 2 hours, and is obtained
Obtain the discoideus sintered body that thickness is about 0.5mm.Confirmed with XRD Rietveld analyses
There is CaSiTiO in the sintered body obtained5Crystallization and CaTiO3Crystallization.In addition, also
Turned into by the XRD Rietveld compositions for being analyzed to identify the sintered body obtained shown in table 1
Composition.Next Cu electrode pastes are coated on to the two sides of above-mentioned sintered body, in blanket of nitrogen
Carry out burning within 15 minutes attached at 800 DEG C, so as to obtain the capacitor sample that electrode diameter is 5mm.
Make to carry out the capacitor sample of evaluation requirement as described below completely.
Then, AC breakdown electric fields, relative dielectric are have rated to the capacitor sample obtained normal
Number, quality factor, static capacity temperature characterisitic, the reliability (static capacity after high-temperature load
Rate of change).Illustrated below for evaluation method.
AC breakdown electric fields Eb (kV/mm) measure is carried out with following methods.To being obtained
The two ends of the capacitor sample obtained apply AC field.AC field is made with 184V/s speed
Size lifted, and with ac voltage withstanding analyzer observation leakage current change.Leakage current is turned into 5mA
When electric field be used as AC breakdown electric fields Eb.Eb is more high then it may be said that relative to height exchange
Performance is more excellent in terms of the resistance to pressure of voltage.In the present embodiment Eb ＞ 10kV/mm to be good
It is good.
Relative dielectric constant (ε) is that basis makes to discoideus capacitor sample at a temperature of 20 DEG C
With LCR testers and be 1MHz using frequency and incoming signal level (measure voltage) is
1.0Vrms condition is measured obtained static capacity to calculate.In the present embodiment ε >=
75 be good.
Static capacity temperature characterisitic ā (ppm/ DEG C) measure is carried out as follows.First,
Temperature is set to change to determine the static capacity of each temperature in the range of+20 DEG C~+85 DEG C.Direct capacitance
Amount is in the bar that frequency is 1MHz and incoming signal level is 1Vrms using LCR testers
It is measured under part.Then, the static capacity at+20 DEG C is being set as C20And by T (DEG C)
Under static capacity be set as CTIn the case of, determine static capacity temperature according to following formulas
Characteristic ā.
ā (ppm/ DEG C)={ (CT-C20)/[C20×(T-20)]}×106
In the present embodiment, will in the range of+20 DEG C~+85 DEG C always turn into -1000≤ā≤
350 situation is as good.In the present embodiment, under the conditions of+85 DEG C meet -1000≤ā≤
350 capacitor sample also meets -1000≤ā at a temperature of other in the range of+20 DEG C~+85 DEG C
≤350.Therefore, the ā at+85 DEG C has been recorded in table 1.
Quality factor (Q) are to be 20 DEG C in temperature to above-mentioned capacitor sample and frequency is
Determined under conditions of 1MHz using LCR testers.In the present embodiment, by Q ＞ 2000
As good.But, it can also reach the mesh of above-mentioned the present application even if Q for less than 2000
's.
The evaluation of the measure and reliability of static capacity rate of change (Δ C) after high-temperature load is
Carried out with following methods.
First, it is 20 DEG C in temperature, measure frequency is 1MHz, measure voltage is 1.0Vrms
Under conditions of the static capacity before high-temperature load is determined using LCR testers.
Next, having carried out high temperature load test.High temperature load test is by by above-mentioned electric capacity
Device sample is impregnated in 150 DEG C of silicone oil and is continuously applied the 7kV alternating voltages of 8 hours to enter
Capable.
In high temperature load test, leakage current is reached that 5mA capacitor sample is judged as rupture.
Rupture is given birth to by the way that 5 capacitor samples are carried out with above-mentioned high temperature load test and plain fetal hair is counted
Number is so as to have rated reliability.The situation that plain one, tire is not all ruptured is as good.
After high temperature load test, with the measure identical with the static capacity before high-temperature load
The capacitor sample that condition does not rupture to plain tire determines the static capacity after high-temperature load.To
Static capacity before high-temperature load is set as C1And the static capacity after high-temperature load is set as C2
In the case of, try to achieve Δ C (%) according to following formulas.In the present embodiment, by Δ C≤5.0
Situation it is good as reliability.
Δ C (%)=[︱ C2-C1︱/C1]×100
As shown in Table 1, the embodiment (sample number with the composition in the range of the present application
1~9) its AC breakdown electric field Eb, static capacity temperature characterisitic ā and reliability are good.
In contrast, ā of the sample number 18 for the comparative example that a is low and b is high at 85 DEG C is less than
-1000.ā of the sample number 19 of comparative example high and low b a at 85 DEG C is more than 350 and can
Also reduced by property.
The reliability of sample number 20~22 that c is less than 0.21 comparative example is reduced.
In addition, the embodiment (sample number 1~13) of 0.21≤c≤4.0 and c ＞ 4.0 embodiment
(sample number 14~17) is excellent compared to quality factor (Q), and Q has exceeded 2000.
(embodiment 2)
Make the MnO of the sample number 12 of embodiment 12It is changed to the Li of ormal weight2O and
SiO2Comparative example (sample number 23~25) capacitor sample and be altered to ormal weight
B2O3And SiO2Comparative example (sample number 26~28) capacitor sample.Except in reality
Apply outside the characteristic determined in example 1, also measured were insulaion resistance (IR) and dielectric loss.
Measurement result is shown in Table 2.In addition, for a, b of table 2, by the after each decimal point the 2nd
Position is rounded up, and for c, the 3rd after decimal point is rounded up.
For insulaion resistance (IR), 500V DC voltage is put on into electricity at a temperature of 20 DEG C
Since container sample simultaneously determine the resistance value (unit Ω) applying voltage after 60 seconds.At this
In embodiment, using more than 1.0E+12 Ω as well.But, even if IR is less than 1.0E+12 Ω
Also the purpose of above-mentioned the present application can be reached.In addition, 1.0E+12 Ω refer to 1.0 × 1012。
Dielectric loss (tan δ) is that capacitor sample is surveyed at 20 DEG C of fiducial temperature using LCR
Examination instrument is under conditions of 1MHz, incoming signal level (measure voltage) are 1.0Vrms in frequency
It is measured.In the present embodiment, using less than 0.05% as well.But, even if tan δ
The purpose of above-mentioned the present application can be also reached more than 0.05%.
As shown in Table 2, containing MnO2Sample number 12 in insulaion resistance and dielectric loss side
Face all shows excellent.In contrast, without MnO2And contain Li2O sample number 23~25 its
Q values, AC breakdown electric fields Eb and reliability result are poorer than sample number 12.In addition, being free of
MnO2And contain B2O3Sample number 26~28 its Q value, AC breakdown electric fields Eb and electrostatic
Capacity temperature characteristic ā results are poorer than sample number 12.Further, its all electric capacity of sample number 23~28
The plain tire of device sample is all ruptured due to high-temperature load sample.
(embodiment 3)
As material powder, except CaSiTiO5Powder, CaTiO3Powder, MnO2Powder it
MgO powder and SiO have been also prepared for it outside2Powder, and weigh to finally giving described in table 3
Composition sintered body.Then, to make capacitor sample with embodiment 1,2 identical methods,
And have rated AC breakdown electric fields, relative dielectric constant, static capacity temperature characterisitic, reliability
(the static capacity rate of change after high-temperature load) and insulaion resistance.Show the result in table 3.
In addition, magnesium oxide in sintered body in addition to MgO also as MgTi2O5、Mg2SiO4、
MgTiO3Exist Deng composite oxides.In table 3, the content of magnesium oxide is converted into MgO
Value be recorded in MgO columns.In addition, the whole samples of table 3 meet above-mentioned formula (1)~formula (5).
[table 3]
As shown in Table 3, samples of the sample number 29B containing magnesium oxide with not containing magnesium oxide
Article Number 29A is compared, Δ C reductions and reliability raising.In addition, containing SiO2Sample number
29D, 29E are with being free of SiO2Sample number 29A compare, AC breakdown electric fields improve and electrostatic
Capacity temperature characteristic is also enhanced.
Further, containing magnesium oxide and SiO2Both, and meet above-mentioned formula (1)~formula
(5) sample number 29F~29M is also that complete characteristic is good.
Further, containing magnesium oxide and without SiO2Sample number 29L, 29M with being free of
Magnesium oxide and without SiO2Sample number 29K compared to Δ C reduce and reliability improve.
(embodiment 4)
Prepare CaSiTiO as material powder5Powder, CaTiO3Powder, V2O5Powder, goes forward side by side
Row weighs the sintered body of the composition to the final embodiment obtained described in table 4 and comparative example.
For d, e of table 4, the 2nd after each decimal point is rounded up respectively, is for f
The 3rd after decimal point is rounded up.Therefore, d+e+f does not turn into 100.00
Sample.Capacitor sample is made similarly to Example 1 below, and has been evaluated.
[table 4]
* it is comparative example
By table 4, the embodiment (sample with the composition in the range of the present application
Numbers 31~39) its AC breakdown electric field Eb, static capacity temperature characterisitic ā and reliability are good.
In contrast, its ā at 85 DEG C of the sample number 40 of the comparative example high low e of d is less than
-1000.Its ā at 85 DEG C of the sample number 41 of the comparative example low high e of d is more than 350.
F is less than its reliability reduction of 0.16 sample number 42,43 of comparative example.
In addition, the embodiment (sample number 31~37) of 0.16≤f≤0.57 and f ＞ 0.57 implementation
Example (sample number 38~39) is compared, and quality factor (Q) are excellent, and Q is more than 2000.
Claims (12)
1. a kind of dielectric composition, it is characterised in that：
Compound containing calcium titanium silicate, calcium titanate and comprising manganese,
It is set as by the content of calcium titanium silicate with CaSiTiO5Progress is scaled a moles of %；Will
The content of calcium titanate is set as with CaTiO3Progress is scaled b moles of %；By the chemical combination comprising manganese
The content of thing is set as with MnO2In the case that progress is scaled c moles of %, 23.4≤a≤75.0,
21.0≤b≤76.4, c >=0.21, a+b+c=100.
2. dielectric composition as claimed in claim 1, it is characterised in that：
0.21≤c≤4.0。
3. dielectric composition as described in claim 1 or 2, it is characterised in that：
0.50≤c≤4.0。
4. dielectric composition as described in claim 1 or 2, it is characterised in that：
1.00≤c≤4.0。
5. a kind of dielectric composition, it is characterised in that：
Compound containing calcium titanium silicate, calcium titanate and comprising vanadium,
It is set as by the content of calcium titanium silicate with CaSiTiO5Progress is scaled d moles of %；Will
The content of calcium titanate is set as with CaTiO3Progress is scaled e moles of %；By the chemical combination comprising vanadium
The content of thing is set as with V2O5In the case that progress is scaled f moles of %, 23.0≤d≤61.7,
37.9≤e≤76.8, f >=0.16, d+e+f=100.
6. dielectric composition as claimed in claim 5, it is characterised in that：
0.16≤f≤0.57。
7. the dielectric composition as described in claim 1 or 5, it is characterised in that：
The content of magnesium oxide is to carry out being scaled 0~18.1wt% with MgO, including
0wt%；
The content of silica is with SiO2Progress is scaled 0~12.9wt%, including 0wt%.
8. the dielectric composition as described in claim 1 or 5, it is characterised in that：
The content of magnesium oxide is being set to be scaled x with MgO, unit is wt%；By dioxy
The content of SiClx is set to SiO2Progress is scaled y, completely full in the case that unit is wt%
Sufficient following formula (1)~formula (5)：
Y≤- 11.28x+204.27 ... formulas (1)；
Y≤- 0.40x+14.90 ... formulas (2)；
Y≤0.62x+9.80 ... formulas (3)；
X >=0 ... formula (4)；
Y >=0 ... formula (5).
9. the dielectric composition as described in claim 1 or 5, it is characterised in that：
The content of magnesium oxide is to carry out being scaled 0~18.1wt% with MgO, including
0wt%；And it is substantially free of silica.
10. the dielectric composition as described in claim 1 or 5, it is characterised in that：
The content of silica is 0~10wt%, including 0wt%；And it is substantially free of magnesium
Oxide.
11. a kind of dielectric ceramics, it is characterised in that：
It is to be made up of dielectric composition according to any one of claims 1 to 10.
12. a kind of capacitor, it is characterised in that：
With the dielectric ceramics and a pair of electrodes described in claim 11.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5736707A (en) * | 1980-08-15 | 1982-02-27 | Nippon Electric Co | |
| JPH10270284A (en) * | 1997-03-24 | 1998-10-09 | Tdk Corp | Manufacture of dielectric ceramic material |
| CN101088960A (en) * | 2006-06-12 | 2007-12-19 | Tdk株式会社 | Electronic device, dielectric ceramic composition and the production method |
| CN103553591A (en) * | 2013-10-11 | 2014-02-05 | 山东国瓷功能材料股份有限公司 | Dielectric ceramic material for multilayer ceramic capacitor with high temperature insulation performance |
-
2016
- 2016-04-18 CN CN201610244671.1A patent/CN107304130B/en active Active
- 2016-10-04 JP JP2016196175A patent/JP6844980B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5736707A (en) * | 1980-08-15 | 1982-02-27 | Nippon Electric Co | |
| JPH10270284A (en) * | 1997-03-24 | 1998-10-09 | Tdk Corp | Manufacture of dielectric ceramic material |
| CN101088960A (en) * | 2006-06-12 | 2007-12-19 | Tdk株式会社 | Electronic device, dielectric ceramic composition and the production method |
| CN103553591A (en) * | 2013-10-11 | 2014-02-05 | 山东国瓷功能材料股份有限公司 | Dielectric ceramic material for multilayer ceramic capacitor with high temperature insulation performance |
Non-Patent Citations (2)
| Title |
|---|
| A. G. COCKBAIN ET AL.: "Ceramic dielectrics with controlled temperature coefficients of permittivity", 《PROC. IEE》 * |
| 黄雯雯等: "低温烧结0.5CaTiO3-0.5CaTiSiO5高频介质陶瓷", 《电子元件与材料》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11158457B2 (en) * | 2018-10-23 | 2021-10-26 | Murata Manufacturing Company, Ltd. | Dielectric ceramic composition and multilayer ceramic capacitor |
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