CN107293621A - A kind of LED chip and preparation method thereof - Google Patents
A kind of LED chip and preparation method thereof Download PDFInfo
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- CN107293621A CN107293621A CN201710606120.XA CN201710606120A CN107293621A CN 107293621 A CN107293621 A CN 107293621A CN 201710606120 A CN201710606120 A CN 201710606120A CN 107293621 A CN107293621 A CN 107293621A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
Abstract
The invention discloses a kind of LED chip and preparation method thereof, in the preparation method step of the LED chip, including：Wavy sidewalls are etched on the epitaxial layer side wall vertical with the first surface of substrate.Wavy sidewalls design adds sidewall area, the total reflection condition of side light extraction is destroyed simultaneously, and then carry High lateral wall light extraction efficiency, improve the brightness of LED chip, the heat produced inside LED is reduced, security is improved, extends the LED chip life-span, wavy sidewalls design the contact area for adding epitaxial layer, improve adhesion strength to each other.
Description
Technical field
The present invention relates to LED chip field, more particularly, to a kind of LED chip and preparation method thereof.
Background technology
Common semi-conducting material has GaN, silicon and germanium etc., and wherein GaN material is a kind of hexagonal wurtzite structure, with taboo
Bandwidth is big, high temperature resistant, strong acid-base resistance, high electronics drift saturated velocity and the features such as stable chemical performance, at present, GaN is
Through one of important member as third generation semi-conducting material.LED is widely used illumination on current worldwide market
Light fixture, with small volume, brightness is high, and power consumption is low, and heating is few, and service life is long, the advantages of environmentally friendly, and with rich and varied
Color category, be well received by consumers.The LED components such as the blue and green light made of GaN material are very normal in daily life
See, in the following application market and commercial promise also having widely.But, due to GaN in epitaxial layer growth process very
Seldom arrive that perfect monocrystalline, epitaxial layer dislocation density be big, p-type Mg efficiency is low and the reason such as N-type carrier concentration height, cause
GaN development is limited, at present, has benefited from being continually striving to for engineers and technicians, and LED technology has obtained quick development, its
Internal quantum efficiency has been greatly improved, but its external quantum efficiency is still relatively low.And on the other hand, with the popularization of LED technology, people
To the brightness requirement of LED illumination also more and more higher, in the prior art, when improving LED brightness, often reduce its safety
Property, therefore, how to ensure its security while LED chip brightness is improved, be current urgent problem to be solved.
The content of the invention
In view of this, the invention provides a kind of LED chip and preparation method thereof, while LED chip brightness is improved
With good security.
In order to solve the above-mentioned technical problem, the application has following technical scheme：
A kind of preparation method of LED chip includes：
Take backing material formation substrate；
In the first surface grown epitaxial layer of substrate, wherein, epitaxial layer includes：Cushion, n type semiconductor layer, Multiple-quantum
Well layer and p type semiconductor layer；
In superficial growth SiO of the epitaxial layer away from substrate side2Layer；
To SiO2Layer is performed etching, so that SiO2The subregion of layer is etched away and exposes epitaxial layer, wherein, SiO2Layer
The part not being etched forms current barrier layer；
Current extending is grown on epitaxial layer and current barrier layer using electron beam evaporation equipment；
The multiple quantum well layer and p type semiconductor layer of epitaxial layer are performed etching to expose n type semiconductor layer, with substrate
The vertical epitaxial layer side wall of first surface on etch wavy sidewalls, wherein, orthographic projection of the wavy sidewalls on substrate
Be shaped as at least one of semi-cylindrical, elliptical cylinder-shape or water-drop-shaped；
N electrode is made on exposed n type semiconductor layer；
P electrode is made on the p type semiconductor layer of epitaxial layer, wherein, P electrode is in contact with current extending；
Away from the side surface of substrate one, the region in addition to N electrode and P electrode makes protective layer；
The second surface of substrate is thinned with grinder so that surface of the second surface to P electrode away from substrate side it
Between ultimate range be 130mm-150mm, wherein, first surface is relative with second surface；
Distributed Bragg reflecting layer is deposited in the second surface of substrate after reduction processing is carried out, obtains LED chip；
Optionally, substrate is one kind in Sapphire Substrate, Si substrates, SiC substrate, GaN substrate or ZnO substrates.
Optionally, it is specially the step of the first surface grown epitaxial layer of substrate：Grown in the first surface of substrate thick
Spend the epitaxial layer for 4um-10um.
Optionally, to SiO2After layer is performed etching, before growth current extending, method also includes：To epitaxial layer
The region not covered by current barrier layer carries out pickling.
Optionally, the material that current extending is used is selected from least one of zinc oxide, aluminium-doped zinc oxide and nickel gold.
Optionally, the thickness of current extending is 100 angstroms -2500 angstroms.
Optionally, in the step of performing etching epitaxial layer to expose n type semiconductor layer, etching depth is 0.8um-
2um。
Optionally, away from the side surface of substrate one, the step of region in addition to N electrode and P electrode makes protective layer has
Body is：
Away from the side surface of substrate one, the region in addition to N electrode and P electrode, using plasma strengthens chemical gaseous phase
Deposition makes protective layer, wherein, the thickness of protective layer is 200 angstroms -2500 angstroms.
Optionally, the material of protective layer includes：
Insulation transparent material, wherein, insulation transparent material is SiO2Or Si3N4。
It is prepared by a kind of LED chip, the preparation method of any one LED chip provided using the present invention.
Compared with prior art, LED chip that the present invention is provided and preparation method thereof, realizes following beneficial effect：
1) wavy sidewalls design adds sidewall area, and then carries High lateral wall light extraction efficiency, improves the bright of LED chip
Degree, while having good anti-static electrictity release ability and high reliability；
2) total reflection condition of side light extraction is destroyed, light extraction efficiency is improved, the heat produced inside LED is reduced
Amount, improves security, extends the LED chip life-span；
3) wavy sidewalls design adds the contact area of epitaxial layer, improves adhesion strength to each other.
Brief description of the drawings
The accompanying drawing for being combined in the description and constituting a part for specification shows embodiments of the invention, and even
It is used for the principle for explaining the present invention together with its explanation.
Fig. 1 is the preparation method flow chart of LED chip of the present invention；
Fig. 2 is LED chip structure schematic diagram in the present invention；
Fig. 3 is the top view of LED chip in the present invention；
Fig. 4 is LED chip structure schematic diagram in comparative example of the present invention；
Fig. 5 is the top view of LED chip in comparative example of the present invention.
Embodiment
The various exemplary embodiments of the present invention are described in detail now with reference to accompanying drawing.It should be noted that：Unless had in addition
Body illustrates that the part and the positioned opposite of step, numerical expression and numerical value otherwise illustrated in these embodiments does not limit this
The scope of invention.
The description only actually at least one exemplary embodiment is illustrative below, never as to the present invention
And its any limitation applied or used.
It may be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable
In the case of, the technology, method and apparatus should be considered as a part for specification.
In shown here and discussion all examples, any occurrence should be construed as merely exemplary, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.It should be noted that：Once a certain item exists
It is defined, then it need not be further discussed in subsequent accompanying drawing in one accompanying drawing.
Embodiment 1
Fig. 1 is the preparation method flow chart of LED chip of the present invention, and Fig. 2 is LED chip structure schematic diagram, Fig. 3 in the present invention
For the top view of LED chip in the present invention, suitably referring to figs. 1 to Fig. 3, this embodiment offers a kind of preparation side of LED chip
Method, using the preparation method prepare LED chip as shown in Figures 2 and 3, preparation flow is as shown in Figure 1.
The preparation method for the LED chip that the embodiment is provided includes：
Step S001：Backing material is taken to prepare substrate 101, in the first surface grown epitaxial layer 201 of substrate 101.Wherein,
Epitaxial layer 201, including：Cushion 102, n type semiconductor layer 103, multiple quantum well layer 104 and p type semiconductor layer 105；
Step S002：In superficial growth SiO of the epitaxial layer 201 away from the side of substrate 1012Layer, to SiO2Layer is performed etching,
So that SiO2The subregion of layer is etched away and exposes epitaxial layer, wherein, SiO2The part that layer is not etched forms current blocking
Layer 106；
Specifically, SiO2Whole surface of the epitaxial layer away from the side of substrate 101 of layer covering, SiO2Layer thickness for 500 angstroms-
Between 4000 angstroms, to SiO2Wet etching is used when performing etching, corrodes and current barrier layer 106, and get rid of SiO2Layer
Other parts so that the part of p type semiconductor layer 105 of epitaxial layer 201 is exposed.
Step S003：Current extending is grown on epitaxial layer 201 and current barrier layer 106 using electron beam evaporation equipment
107；
Specifically, the covering part epitaxial layer 201 of current extending 107 and portion of electrical current barrier layer 106.
Step S004：The multiple quantum well layer 104 and p type semiconductor layer 105 of epitaxial layer 201 are performed etching to expose N
Type semiconductor layer 103, wavy sidewalls are etched on the epitaxial layer side wall 2011 vertical with the first surface of substrate 101.
Wherein, orthographic projection of the wavy sidewalls on substrate is shaped as in semi-cylindrical, elliptical cylinder-shape or water-drop-shaped
It is at least one；
Specifically, when being performed etching to epitaxial layer 201 use inductively coupled plasma dry etching, etching with
In the step of exposing n type semiconductor layer 103, the position of etching is not covered by current barrier layer 106 and current extending 107
Subregion, etching is proceeded by from p type semiconductor layer 105, untill spilling the surface of n type semiconductor layer 103.Such as Fig. 3
Shown, epitaxial layer side wall 2011 includes：The epilayer edges wall vertical with the first surface of substrate 101, the N-type being exposed half
Epitaxial layer cell wall in the groove of conductor layer.
Step S005：N electrode 108 is made on exposed n type semiconductor layer 103, in the P-type semiconductor of epitaxial layer 210
P electrode 109 is made on layer 105.
Wherein, P electrode 109 is in contact with current extending 107.
Specifically, making N electrode 108 and P electrode 109 by the way of evaporation, now, N electrode 108 and N-type are partly led
Body layer 103 is in contact, and P electrode 109 and p type semiconductor layer 105, current barrier layer 106 and current extending 107 are in contact, N
Electrode 108 and the thickness of P electrode 109 are 0.7 μm -5 μm.
Step S006：Away from the side surface of substrate 101 1, the region in addition to N electrode 108 and P electrode 109 makes protection
Layer 110；
Specifically, protective layer 110 covers the epitaxial layer 201, current barrier layer 106 and current extending 107 of all exposures,
In order to ensure to be completely covered above layers, protective layer 110 can be with covering part N electrode 108 and P electrode 109.
Step S007：The second surface of substrate 101 is thinned with grinder so that second surface to P electrode 109 is away from lining
Ultimate range between the surface of the side of bottom 101 is 130mm-150mm.
Wherein, first surface is relative with second surface；
Step S008：Distributed Bragg reflecting layer is deposited in the second surface of substrate after reduction processing is carried out, obtains LED
Chip；
Specifically, obtaining also carrying out a survey after LED chip, LED chip is classified according to a survey result.
Embodiment 2
Suitably referring to figs. 1 to Fig. 3, this embodiment offers the preparation method of another LED chip, using the preparation method
As shown in Figures 2 and 3, preparation flow is as shown in Figure 1 for the LED chip of preparation.
The preparation method for the LED chip that the embodiment is provided includes：
Step S001：Backing material formation substrate 101 is taken, in the first surface grown epitaxial layer 201 of substrate 101.Wherein,
Epitaxial layer 201, including：Cushion 102, n type semiconductor layer 103, multiple quantum well layer 104 and p type semiconductor layer 105；
Specifically, substrate 101 is one kind in Sapphire Substrate, Si substrates, SiC substrate, GaN substrate or ZnO substrates,
The first surface growth thickness of substrate 101 is 4um-10um epitaxial layer 201.
Step S002：In superficial growth SiO of the epitaxial layer 201 away from the side of substrate 1012Layer, to SiO2Layer is performed etching,
So that SiO2The subregion of layer is etched away and exposes epitaxial layer, wherein, SiO2The part that layer is not etched forms current blocking
Layer 106；
Specifically, to SiO2Wet etching is used when performing etching, corrodes and current barrier layer, and get rid of SiO2
The other parts of layer so that the p type semiconductor layer 105 of epitaxial layer 201 is exposed.
Step S003：Current extending is grown on epitaxial layer 201 and current barrier layer 106 using electron beam evaporation equipment
107；
Specifically, to SiO2After layer is performed etching, before growth current extending 107, method also includes：To extension
The region that layer 201 is not covered by current barrier layer 106 carries out pickling, and to remove the pollutant on surface, current extending 107 is used
Material be selected from least one of zinc oxide, aluminium-doped zinc oxide and nickel gold, the thickness of current extending 107 for 100 angstroms-
2500 angstroms, the covering part epitaxial layer 201 of current extending 107 and portion of electrical current barrier layer 106.
Step S004：The multiple quantum well layer 104 and p type semiconductor layer 105 of epitaxial layer 201 are performed etching to expose N
Type semiconductor layer 103, wavy sidewalls are etched on the epitaxial layer side wall 2011 vertical with the first surface of substrate 101.
Wherein, the orthographic projection of wavy sidewalls on the substrate 101 is shaped as in semi-cylindrical, elliptical cylinder-shape or water-drop-shaped
At least one；
Specifically, using inductively coupled plasma dry etching to epitaxial layer 201, partly led being etched to expose out N-type
In the step of body layer 103, etching depth is 0.8um-2um, and the position of etching is not by current barrier layer 106 and current extending
The subregion of 107 coverings, proceeds by etching from p type semiconductor layer 105, is until spilling the surface of n type semiconductor layer 103
Only.As shown in figure 3, epitaxial layer side wall 2011 includes：It is the epilayer edges wall vertical with the first surface of substrate 101, sudden and violent
Epitaxial layer cell wall in the groove of the n type semiconductor layer of dew.
Step S005：N electrode 108 is made on exposed n type semiconductor layer 103, in the P-type semiconductor of epitaxial layer 201
P electrode 109 is made on layer 105.
Wherein, P electrode 109 is in contact with current extending 107.
Specifically, making N electrode 108 and P electrode 109 by the way of evaporation, now, N electrode 108 and N-type are partly led
Body layer 103 is in contact, and P electrode 109 and p type semiconductor layer 105, current barrier layer 106 and current extending 107 are in contact, N
Electrode 108 and the thickness of P electrode 109 are 0.7 μm -5 μm, and evaporation carries out alloy behaviour after terminating to N electrode 108 and P electrode 109
Make, alloy temperature is 100 DEG C -400 DEG C.
Step S006：Away from the side surface of substrate 101 1, the region in addition to N electrode 108 and P electrode 109 makes protection
Layer 110；
Specifically, away from the side surface of backing material one, the region in addition to N electrode 108 and P electrode 109, using etc. from
Daughter enhancing chemical vapor deposition makes protective layer 110, wherein, the thickness of protective layer 110 is 200 angstroms -2500 angstroms, protective layer
110 material includes：Insulation transparent material, wherein, insulation transparent material is SiO2Or Si3N4.In the remote side surface of substrate one,
Protective layer 110 covers the epitaxial layer 201, current barrier layer 106 and current extending 107 of all exposures, in order to ensure to cover completely
Lid above layers, protective layer 110 can be with covering part N electrode 108 and P electrode 109.
Step S007：The second surface of substrate 101 is thinned with grinder so that second surface to P electrode 109 is away from lining
Ultimate range between the surface of the side of bottom 101 is 130mm-150mm.
Wherein, first surface is relative with second surface；
Step S008：Distributed Bragg reflecting layer is deposited in the second surface of substrate after reduction processing is carried out, obtains LED
Chip；
Specifically, obtaining also carrying out a survey after LED chip, LED chip is classified according to a survey result.
Embodiment 3
For the technique effect for the preparation method for further clearly embodying the LED chip that the present invention is provided, presented below one
The embodiment of the preparation method of LED chip is planted, the comparative example of the present invention is used as.
It should be noted that in the comparative example, the explanation that takes a single example its substantially technological process, people in the art
Member knows, and technical process may have the change of some details during specific production.
Fig. 4 is LED chip structure schematic diagram in comparative example of the present invention, and Fig. 5 is LED core in comparative example of the present invention
The top view of piece, using the LED chip structure prepared by the preparation technology of the embodiment 3 as shown in Figure 4 and Figure 5, preparation process
It is as follows：
Substrate 301 is made using sapphire material and structure design is carried out.
Epitaxial growth buffer 302, n type semiconductor layer 303, multiple quantum well layer 304 and the p-type half successively on substrate 301
Conductor layer 305, anneals, detection.
Using dry etching or wet processing etching p type semiconductor layer 305, multiple quantum well layer 304 and n type semiconductor layer
303。
The N electrode 308 being electrically connected with n type semiconductor layer 308 is prepared on n type semiconductor layer 308.In P-type semiconductor
The P electrode 309 being electrically connected with p type semiconductor layer 305 is prepared on layer 305, traditional LED core as shown in Figure 4 and Figure 5 is formed
Piece.
By the comparative example respectively compared with above-described embodiment 1 and embodiment 2, embodiment 1 and embodiment 2 can reach
To following beneficial effect：
1) wavy sidewalls design adds sidewall area, and then carries High lateral wall light extraction efficiency, improves the bright of LED chip
Degree, while having good anti-static electrictity release ability and high reliability；
2) total reflection condition of side light extraction is destroyed, light extraction efficiency is improved, the heat produced inside LED is reduced
Amount, improves security, extends the LED chip life-span；
3) wavy sidewalls design adds the contact area of epitaxial layer, improves adhesion strength to each other.
Although some specific embodiments of the present invention are described in detail by example, the skill of this area
Art personnel are it should be understood that example above is merely to illustrate, the scope being not intended to be limiting of the invention.The skill of this area
Art personnel to above example it should be understood that can modify without departing from the scope and spirit of the present invention.This hair
Bright scope is defined by the following claims.
Claims (10)
1. a kind of preparation method of LED chip, it is characterised in that including：
Take backing material formation substrate；
In the first surface grown epitaxial layer of the substrate, wherein, the epitaxial layer, including：It is cushion, n type semiconductor layer, many
Quantum well layer and p type semiconductor layer；
In superficial growth SiO of the epitaxial layer away from the substrate side2Layer；
To the SiO2Layer is performed etching, so that the SiO2The subregion of layer is etched away and the exposure epitaxial layer, its
In, the SiO2The part that layer is not etched forms current barrier layer；
Current extending is grown on the epitaxial layer and the current barrier layer using electron beam evaporation equipment；
The multiple quantum well layer and the p type semiconductor layer of the epitaxial layer are performed etching and partly led with exposing the N-type
Body layer, wavy sidewalls are etched on the epitaxial layer side wall vertical with the first surface of the substrate, wherein, the waveform
The orthographic projection of side wall over the substrate is shaped as at least one of semi-cylindrical, elliptical cylinder-shape or water-drop-shaped；
N electrode is made on the exposed n type semiconductor layer；
P electrode is made on the p type semiconductor layer of the epitaxial layer, wherein, the P electrode and the current extending phase
Contact；
Away from the side surface of substrate one, the region in addition to the N electrode and the P electrode makes protective layer；
The second surface of the substrate is thinned with grinder so that the second surface to the P electrode is away from the substrate
Ultimate range between the surface of side is 130mm-150mm, wherein, the first surface is relative with the second surface；
Distributed Bragg reflecting layer is deposited in the second surface of the substrate after reduction processing is carried out, obtains the LED chip.
2. the preparation method of LED chip according to claim 1, it is characterised in that the substrate is Sapphire Substrate, Si
One kind in substrate, SiC substrate, GaN substrate or ZnO substrates.
3. the preparation method of LED chip according to claim 1, it is characterised in that given birth in the first surface of the substrate
The step of long epitaxial layer is specially：
The epitaxial layer for being 4um-10um in the first surface growth thickness of the substrate.
4. the preparation method of LED chip according to claim 1, it is characterised in that to the SiO2Layer performs etching it
Afterwards, before growth current extending, methods described also includes：
Pickling is carried out to the region that the epitaxial layer is not covered by the current barrier layer.
5. the preparation method of LED chip according to claim 1, it is characterised in that the material that the current extending is used
Material is selected from least one of zinc oxide, aluminium-doped zinc oxide and nickel gold.
6. the preparation method of LED chip according to claim 1, it is characterised in that the thickness of the current extending is
100 angstroms -2500 angstroms.
7. the preparation method of LED chip according to claim 1, it is characterised in that performed etching to the epitaxial layer
In the step of to expose the n type semiconductor layer, etching depth is 0.8um-2um.
8. the preparation method of LED chip according to claim 1, it is characterised in that in the remote side surface of substrate one,
The step of region in addition to the N electrode and the P electrode makes protective layer be specially：
Away from the side surface of substrate one, the region in addition to the N electrode and the P electrode, using plasma strengthens
Chemical vapor deposition makes the protective layer, wherein, the thickness of the protective layer is 200 angstroms -2500 angstroms.
9. the preparation method of LED chip according to claim 1, it is characterised in that the material of the protective layer includes：
Insulation transparent material, wherein, the insulation transparent material is SiO2Or Si3N4。
10. a kind of LED chip, it is characterised in that the LED chip is using the LED core any one of claim 1 to 9
It is prepared by the preparation method of piece.
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| CN108231961A (en) * | 2018-01-30 | 2018-06-29 | 厦门乾照光电股份有限公司 | A kind of production method of LED chip structure |
| CN108336200A (en) * | 2018-03-27 | 2018-07-27 | 湘能华磊光电股份有限公司 | LED chip structure and preparation method thereof |
| CN109388992A (en) * | 2018-09-28 | 2019-02-26 | 苏宁易购集团股份有限公司 | A kind of scanning device and scanning system |
| CN112670382A (en) * | 2020-12-23 | 2021-04-16 | 天津三安光电有限公司 | LED chip and preparation method thereof |
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