CN107293483A - A kind of laser chip planarization processing unit (plant) and method - Google Patents
A kind of laser chip planarization processing unit (plant) and method Download PDFInfo
- Publication number
- CN107293483A CN107293483A CN201710433770.9A CN201710433770A CN107293483A CN 107293483 A CN107293483 A CN 107293483A CN 201710433770 A CN201710433770 A CN 201710433770A CN 107293483 A CN107293483 A CN 107293483A
- Authority
- CN
- China
- Prior art keywords
- laser
- chip
- output
- energy
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000012545 processing Methods 0.000 title claims abstract description 18
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 25
- 239000012498 ultrapure water Substances 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 230000033228 biological regulation Effects 0.000 claims description 43
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 5
- 238000002309 gasification Methods 0.000 claims description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 4
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 238000003672 processing method Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 230000007613 environmental effect Effects 0.000 abstract description 6
- 238000012423 maintenance Methods 0.000 abstract description 3
- 238000005498 polishing Methods 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Lasers (AREA)
Abstract
Processing unit (plant) is planarized the invention discloses a kind of laser chip, it is sent into including process chamber, chip fixed platform, laser aid, chip and sends out interface, rotation positioning device, laser output reception device, detecting control device and ultrapure water device, provided with chip fixed platform, laser aid and laser output reception device in process chamber, chip fixed platform connection laser output reception device, laser output reception device connection laser aid, chip fixed platform connection chip, which is sent into, sends out interface, rotation positioning device connection chip fixed platform.One kind, which has been made, using above-mentioned technical proposal reduces cost, the reliable laser chip planarization processing unit (plant) of environmental protection, realize the problems such as simplified process solves planarization process efficiency, lifting chip manufacturing yield, and improve chip manufacturing and found the factory, manufacture, maintenance cost and solving environmental issue.
Description
Technical field
The present invention relates to electronic applications IC chip manufacturing technology, more particularly to a kind of laser chip planarization processing
Device.
Background technology
Integrated circuit technique is flourished, and in order to lift production capacity and reduce cost, lamination is must be directed towards on making technology
With granular；Therefore planarization (Planarization) making technology technology is indispensable in the manufacture of IC chip
A kind of technology, due to circuit wire spoke design tinyization demand, technology more makes rapid progress towards high density of integration, for core
Piece surface is after a series of film is deposited with etching, fine copper circuit or tungsten circuit, polysilicon, oxide film dielectric electric layer
Deng the uneven phenomenon of appearance, early utilization wet etching process technology is planarized the storehouse on chip or depression, its technology
Evolution also includes SOG, Re-flow, Etch Back etc., flat from the research and development department's copper wiring of nineteen eighty-three IBM and chip surface
Change pioneering use and chemically-mechanicapolish polish (abbreviation CMP) technology, the equipment dealer Westtech (IPEC companies now) of cooperation,
The CMP tool cooperated with IBM was completed in 1988.Ebara in 1994 releases First and integrates cleaning and CMP board, 1996
Year other manufacturers quickly release integration CMP and wiper mechanism equipment, the manufacturer of integrated board is released at 2000 just have and occupy
Rate, such as IPEC, SpeedFam.Significantly change to CMP tool occupation rate of market in 2000, early stage AMAT thinks that CMP belongs to dirty
Processing procedure is contaminated, chip factory is difficult to use CMP and copper wiring, but but progressively takes off, it is possible to the main flow as IC manufacturing,
AMAT just quickly cuts CMP tool, and current AMAT and Ebara is main flow.Therefore using flatening process to chemically-mechanicapolish polish
After reaching that chip is flat, be conducive to next technique to carry out, solve circuit lithography process and be stranded because flatness becomes official post exposure focusing
Difficulty, or even the problem of can not be focused etc..Important, its primary operational from this CMP process planarization more shape
Component has chemical polishing solution (Slurry), polishing pad (Polishing Pad), polishing pad conditioner (Pad Conditioner),
Chemically-mechanicapolish polish the process of planarization, it is necessary to by polishing liquid mixing system (Slurry Mixing System) and chemicals
The conveying polishing fluid of induction system (Slurry Dispense System) stable and uniform is supplied between chip and polishing pad, is thrown
Light pad surface is full of polishing fluid, and this liquid contains chemical agent (acid solution, oxidant) to corrode new film surface film, while liquid
Countless nanoscale polishing particles (SiO2, Al2O3, CeO2) are inside left floating, they can deeply strike off micro film layer, with chemical erosion
Interacted with mechanical lapping, reach the target of planarization.But the trim that polishing is removed is had in above-mentioned planarization process
Or roughness is deteriorated after polishing pad film difference, the efficiency even scratch chip surface that have impact on polishing has influence on the good of integrated circuit
Rate, therefore polishing pad conditioner must play the part of the key player for doing up polishing pad.
The technology planarized on CMP, it is necessary to the chemical polishing solution of supplier of the use from different qualities,
The running stores such as polishing pad, polishing pad conditioner, wherein there is extremely complex reciprocation, technique adjustment is difficult.Still there is polishing
Liquid mix with the great investment of induction system, and its chemicals and abrasive particle are caused to environment it is unfriendly must handle, trimming device
The problems such as grain causes chip scratch, planarization process efficiency, chip manufacturing yield is fallen in diamond fracture, is all built for chip manufacturing
Factory, manufacture, maintenance cost and environmental issue shortcoming it is to be improved.
The content of the invention
In order to solve the above problems, the present invention, which provides one kind, reduces cost, the reliable laser chip planarization processing of environmental protection
Device.
A kind of laser chip planarization processing unit (plant) in the present invention, including process chamber, chip fixed platform, laser dress
Put, chip is sent into and sends out interface, rotation positioning device, laser output reception device, detecting control device and ultrapure water dress
Put, provided with chip fixed platform, laser aid and laser output reception device, the chip fixed platform in the process chamber
Laser output reception device is connected, the laser output reception device connection laser aid, the chip fixed platform connects core
Piece, which is sent into, sends out interface, and the rotation positioning device connects chip fixed platform,
The rotation positioning device includes displacement location control device and servomotor, and the detecting control device includes
Arrangement for detecting, supervising device, laser multi-wavelength output device, laser pulse ripple output device, laser frequency control device and swash
Luminous energy amount control device, the arrangement for detecting and laser output reception device is connected, the arrangement for detecting with it is in parallel after laser
Multi-wavelength output device, laser pulse ripple output device, laser frequency control device, the connection of Laser energy attenuation device, it is described
After laser multi-wavelength output device, laser pulse ripple output device, laser frequency control device, Laser energy attenuation device are in parallel
Connected with supervising device, the supervising device is connected with laser aid, the laser aid connects servomotor,
The chip fixed platform connects ultrapure water device, and the chip fixed platform is also connected with vacuum plant.
In such scheme, the laser aid includes LASER Light Source, power supply unit, beam directing device, scanner, anti-
Penetrate mirror and lens.
In such scheme, the laser multi-wavelength output device includes fundamental wave generator, the first regulation of energy device, the second energy
Measure modulator, the 3rd regulation of energy device, the first secondary harmonic generator, the second secondary harmonic generator, the production of the 3rd second harmonic
Raw device and triple-frequency harmonics generator, the fundamental wave generator connect the first regulation of energy device, the first regulation of energy device connection
First secondary harmonic generator, first secondary harmonic generator connects triple-frequency harmonics generator, first regulation of energy
Device connects the second regulation of energy device, and the second regulation of energy device connects the second secondary harmonic generator, and described the second two times humorous
Baud generator connects the 3rd regulation of energy device, and the 3rd regulation of energy device connects the 3rd secondary harmonic generator,
Also include the first lens, the second lens, the 3rd lens, the 4th lens, the first speculum and the second speculum, it is described
The laser of triple-frequency harmonics generator output inputs the first lens, and the laser input second of the 3rd regulation of energy device output is saturating
Mirror, the laser of the 3rd secondary harmonic generator output inputs the first speculum, and the laser of the first speculum output is defeated
Enter the 3rd lens, the laser of the second regulation of energy device output inputs the second speculum, and what second speculum was exported swashs
Light inputs the 4th lens, first lens, the second lens, the 3rd lens and the 4th lens output laser.
In such scheme, the laser pulse ripple output device includes impulse wave driver, laser resonator, lasing modes
Data sink, Energy distribution analyzer and energy follower, the laser resonator are switched provided with quality factor.
In such scheme, the ultrapure water device include ultra-pure water source of supply, control device, CO 2 vessels with
Switch, ultrapure water head.
A kind of laser chip processing method for flattening, comprises the following steps：
S1：Chip is passed in and out in the way of vacuum suction and is fixed in chip fixed platform；
S2：By laser aid and detecting control device, regulate and control the laser of output high-power multi-Wavelength Pulses ripple；
S3：Gasification planarization is carried out to chip surface with laser；
S4：Ultra-pure water injection carbon dioxide rinsing, drying completes manufacture craft.
The advantages of the present invention are：The present invention, which provides one kind, reduces cost, the reliable laser chip of environmental protection
Processing unit (plant) is planarized, is disguised by laser planarization and puts the impulse wave laser for exporting various desired wavelengths and energy, by chip system
Fine circuits after the film being deposited in journey and etching on surface, the copper circuit or tungsten circuit of metal level and polysilicon, oxygen
There is uneven surface and awards gasification process in change film medium electric layer etc., the method for carrying out planarization processing.Realize simplified process
The problems such as solving planarization process efficiency, lifting chip manufacturing yield, and improve chip manufacturing found the factory, manufacture, maintenance cost with
Solve environmental issue.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, without having to pay creative labor, may be used also
To obtain other accompanying drawings according to these accompanying drawings.
Fig. 1 is system block diagram of the invention；
Fig. 2 is the system block diagram of laser multi-wavelength output device；
Fig. 3 is the system block diagram of laser pulse ripple output device；
Fig. 4 is the system block diagram of ultrapure water device.
In figure：1st, process chamber 2, chip fixed platform 3, laser aid 4, chip, which are sent into, sends out interface 5, rotates fixed
Position device 6, laser output reception device 7, detecting control device 8, ultrapure water device 7325, vacuum plant 51, position
Move position control device 52, servomotor 71, arrangement for detecting 72, supervising device 73, laser multi-wavelength output device
74th, laser pulse ripple output device 75, laser frequency control device 76, Laser energy attenuation device 731, fundamental wave generator
7312nd, the first regulation of energy device 7313, the first secondary harmonic generator 7314, triple-frequency harmonics generator 7321, the second energy
Modulator 7323, the second secondary harmonic generator 7324, the 3rd regulation of energy device 7333, the 3rd secondary harmonic generator
7315th, the first lens 7325, the second lens 7335, the 3rd lens 7345, the 4th lens 7334, the first speculum 7344,
Second speculum 741, impulse wave driver 742, laser resonator 743, lasing modes data sink 744, energy point
Cloth analyzer 745, energy follower 7421, quality factor switch 81, ultra-pure water source of supply 82, control device 83, dioxy
Change carbon vessel and switch 84, ultrapure water head
Embodiment
With reference to the accompanying drawings and examples, the embodiment to the present invention is further described.Following examples are only
For clearly illustrating technical scheme, and it can not be limited the scope of the invention with this.
As shown in Figure 1 to 4, the present invention is that a kind of laser chip planarizes processing unit (plant), including process chamber 1, chip
Fixed platform 2, laser aid 3, chip, which are sent into, sends out interface 4, rotation positioning device 5, laser output reception device 6, detecting control
Received in device 7 and ultrapure water device 8 processed, process chamber 1 provided with chip fixed platform 2, laser aid 3 and laser output
Device 6, the connection laser output reception device 6 of chip fixed platform 2, the laser output connection laser aid 3 of reception device 6, chip
The connection chip of fixed platform 2, which is sent into, sends out interface 4, the connection chip of rotation positioning device 5 fixed platform 2,
Rotation positioning device 5 includes displacement location control device 51 and servomotor 52, and detecting control device 7 includes detecing
Survey device 71, supervising device 72, laser multi-wavelength output device 73, laser pulse ripple output device 74, laser frequency control dress
Put 75 and Laser energy attenuation device 76, arrangement for detecting 71 is connected with laser output reception device 6, arrangement for detecting 71 with it is in parallel after
Laser multi-wavelength output device 73, laser pulse ripple output device 74, laser frequency control device 75, Laser energy attenuation dress
Put 76 connections, laser multi-wavelength output device 73, laser pulse ripple output device 74, laser frequency control device 75, laser energy
Connected after the parallel connection of amount control device 76 with supervising device 72, supervising device 72 is connected with laser aid 3, the connection of laser aid 3 is watched
Motor 52 is taken,
The connection ultrapure water of chip fixed platform 2 device 8, chip fixed platform 2 is also connected with vacuum plant 22.
Laser aid 3 includes LASER Light Source, power supply unit, beam directing device, scanner, speculum and lens.
Laser multi-wavelength output device 73 includes fundamental wave generator 731, the first regulation of energy device 7312, the second regulation of energy
Device 7321, the 3rd regulation of energy device 7324, the first secondary harmonic generator 7313, the second secondary harmonic generator the 7323, the 3rd
Secondary harmonic generator 7333 and triple-frequency harmonics generator 7314, fundamental wave generator 731 connect the first regulation of energy device 7312, the
One regulation of energy device 7312 connects the first secondary harmonic generator 7313, the first secondary harmonic generator 7313 connection triple-frequency harmonics
Generator 7314, the first regulation of energy device 7312 connects the second regulation of energy device 7321, the second regulation of energy device 7321 connection the
Two secondary harmonic generators 7323, the second secondary harmonic generator 7323 connects the 3rd regulation of energy device 7324, and the 3rd energy is adjusted
Control device 7324 and connect the 3rd secondary harmonic generator 7333,
Also include the first lens 7315, the second lens 7325, the 3rd lens 7335, the 4th lens 7345, the first speculum
7334 and second speculum 7344, the laser that triple-frequency harmonics generator 7314 is exported inputs the first lens 7315, and the 3rd energy is adjusted
Laser the second lens 7325 of input that device 7324 is exported are controlled, the laser input first of the 3rd secondary harmonic generator 7333 output is anti-
Mirror 7334 is penetrated, the laser of the first speculum 7334 output inputs the 3rd lens 7335, and what the second regulation of energy device 7321 was exported swashs
Light inputs the second speculum 7344, and the laser of the second speculum 7344 output inputs the 4th lens 7345, the first lens 7315, the
Two lens 7325, the 3rd lens 7335 and the 4th lens 7345 output laser.
The laser that fundamental wave generator is produced has 4 circuits, and first route laser order passes through the first regulation of energy device
7312nd, the first secondary harmonic generator 7313, the lens 7315 of triple-frequency harmonics generator 7314 and first, export a kind of three times ripple
Long laser；Article 2 route laser order by the first regulation of energy device 7312, the second regulation of energy device 7321, the second two times
Harmonic generator 7323, the 3rd regulation of energy device 7324 and the second lens 7325, export a kind of laser of two times of wavelength；3rd
Article route sequence passes through the first regulation of energy device 7312, the second regulation of energy device 7321, the second secondary harmonic generator 7323,
Three regulation of energy devices 7324, the 3rd secondary harmonic generator 7333, the first speculum 7334 and the 3rd lens 7335, output one
Plant the laser of four times of wavelength；Article 4 route sequence passes through the first regulation of energy device 7312, the second regulation of energy device 7321, second
The lens 7345 of speculum 7344 and the 4th, export a kind of laser of one times of wavelength.Only need to control the first lens when using
7315th, whether the second lens 7325, the 3rd lens 7335 and the 4th lens 7345 are that several times of wavelength of output may be selected by light
Laser.
Laser pulse ripple output device 74 includes impulse wave driver 741, laser resonator 742, lasing modes data and connect
Device 743, Energy distribution analyzer 744 and energy follower 745 are received, laser resonator 742 is provided with quality factor switch 7421.
Ultrapure water device 8 includes ultra-pure water source of supply 81, control device 82, CO 2 vessels and switchs 83, surpasses
Pure water rinsing first 84.
A kind of laser chip processing method for flattening, comprises the following steps：
S1：Chip is passed in and out in the way of vacuum suction and is fixed in chip fixed platform；
S2：By laser aid and detecting control device, regulate and control the laser of output high-power multi-Wavelength Pulses ripple；
S3：Gasification planarization is carried out to chip surface with laser；
S4：Ultra-pure water injection carbon dioxide rinsing, drying completes manufacture craft.
Process chamber 1 is that one kind can open closable confined space, and appropriate pump drainage produces negative pressure, and laser gasification is added
The device that waste gas after work is excluded, chip is sent into submitting interface and is sent into the chip of preceding processing procedure and fixed in the way of vacuum suction
In chip fixed platform；By laser aid and detecting control device, regulate and control the laser of output high-power multi-Wavelength Pulses ripple,
Specific production method has been described in detail above.
Impulse wave is sent to laser resonator 742 and is started quality by impulse wave output device 74 using impulse wave driver 741
Factor switch 7421 sends out laser-driven signal, then continuously reception drive signal is produced by lasing modes data sink 743
Raw lasing modes data, by Energy distribution analyzer 744, analyze Energy distribution mode, after can be defeated after the stand-by period
Go out the impulse wave laser 745 that energy was cut.
Rotation positioning device 5 includes servomotor 52, gear train, displacement location control device 51, after first being positioned,
Chip fixed platform 2 is reversely rotated with laser aid 3 with the same center of circle, is mutually moved with 60RPM~120RPM velocities of rotation, is turned
Speed can adjust with position.
Ultrapure water device 8, its resistance value 18.2M Ω of ultra-pure water source of supply 81 pass through CO 2 vessels and switch
83 injection carbon dioxide bubbles, its flow is controlled by control device 82:10LPM~90LPM, conductance:5uS/cm~50uS/
Cm, resistance value:0.2M Ω~0.02M Ω, are washed away, static electrification can not eliminate quiet on chip yet by first 84 output of ultrapure water
Electricity, cools down the function with rinsing.
The chip that complete processing can be exited chip with operate interface manually or automatically and fixed by chip feeding submitting interface 4
Platform 2.
A kind of laser chip processing method for flattening that the present invention is innovated and its device, the chip flattening method provided
It is with device reusable, it is to avoid above-mentioned setting polishing fluid mixing and the great investment of induction system, and its is used
Chemicals must be handled with abrasive particle, and the situation that environment is polluted is able to thoroughly to solve.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God is with principle, and any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (6)
1. a kind of laser chip planarizes processing unit (plant), it is characterised in that including process chamber, chip fixed platform, laser dress
Put, chip is sent into and sends out interface, rotation positioning device, laser output reception device, detecting control device and ultrapure water dress
Put, provided with chip fixed platform, laser aid and laser output reception device, the chip fixed platform in the process chamber
Laser output reception device is connected, the laser output reception device connection laser aid, the chip fixed platform connects core
Piece, which is sent into, sends out interface, and the rotation positioning device connects chip fixed platform,
The rotation positioning device includes displacement location control device and servomotor, and the detecting control device includes detecting
Device, supervising device, laser multi-wavelength output device, laser pulse ripple output device, laser frequency control device and laser energy
Amount control device, the arrangement for detecting and laser output reception device is connected, the arrangement for detecting with it is in parallel after many ripples of laser
Long output device, laser pulse ripple output device, laser frequency control device, the connection of Laser energy attenuation device, the laser
With prison after multi-wavelength output device, laser pulse ripple output device, laser frequency control device, Laser energy attenuation device are in parallel
Device series connection is controlled, the supervising device is connected with laser aid, and the laser aid connects servomotor,
The chip fixed platform connects ultrapure water device, and the chip fixed platform is also connected with vacuum plant.
2. a kind of laser chip planarization processing unit (plant) according to claim 1, it is characterised in that the laser aid bag
Include LASER Light Source, power supply unit, beam directing device, scanner, speculum and lens.
3. a kind of laser chip planarization processing unit (plant) according to claim 1, it is characterised in that the laser multi-wavelength
Output device include fundamental wave generator, the first regulation of energy device, the second regulation of energy device, the 3rd regulation of energy device, the first two times
Harmonic generator, the second secondary harmonic generator, the 3rd secondary harmonic generator and triple-frequency harmonics generator, the fundamental wave are produced
Device connects the first regulation of energy device, and the first regulation of energy device connects the first secondary harmonic generator, and described the first two times humorous
Baud generator connects triple-frequency harmonics generator, and the first regulation of energy device connects the second regulation of energy device, second energy
Modulator connects the second secondary harmonic generator, and second secondary harmonic generator connects the 3rd regulation of energy device, and described the
Three regulation of energy devices connect the 3rd secondary harmonic generator,
Also include the first lens, the second lens, the 3rd lens, the 4th lens, the first speculum and the second speculum, described three times
The laser of harmonic generator output inputs the first lens, and the laser of the 3rd regulation of energy device output inputs the second lens, institute
The laser for stating the output of the 3rd secondary harmonic generator inputs the first speculum, the laser input the 3rd of the first speculum output
Lens, the laser of the second regulation of energy device output inputs the second speculum, the laser input of the second speculum output
4th lens, first lens, the second lens, the 3rd lens and the 4th lens output laser.
4. a kind of laser chip planarization processing unit (plant) according to claim 1, it is characterised in that the laser pulse ripple
It is defeated that output device includes impulse wave driver, laser resonator, lasing modes data sink, Energy distribution analyzer and energy
Go out device, the laser resonator is switched provided with quality factor.
5. a kind of laser chip planarization processing unit (plant) according to claim 1, it is characterised in that the ultrapure water
Device includes ultra-pure water source of supply, control device, CO 2 vessels and switch, ultrapure water head.
6. a kind of laser chip processing method for flattening, it is characterised in that comprise the following steps：
S1：Chip is passed in and out in the way of vacuum suction and is fixed in chip fixed platform；
S2：By laser aid and detecting control device, regulate and control the laser of output high-power multi-Wavelength Pulses ripple；
S3：Gasification planarization is carried out to chip surface with laser；
S4：Ultra-pure water injection carbon dioxide rinsing, drying completes manufacture craft.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710433770.9A CN107293483A (en) | 2017-06-09 | 2017-06-09 | A kind of laser chip planarization processing unit (plant) and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710433770.9A CN107293483A (en) | 2017-06-09 | 2017-06-09 | A kind of laser chip planarization processing unit (plant) and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107293483A true CN107293483A (en) | 2017-10-24 |
Family
ID=60097594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710433770.9A Pending CN107293483A (en) | 2017-06-09 | 2017-06-09 | A kind of laser chip planarization processing unit (plant) and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107293483A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0542382A (en) * | 1991-08-08 | 1993-02-23 | Amada Co Ltd | Laser beam processing method using higher harmonic wave of yag laser |
| JP2004008381A (en) * | 2002-06-05 | 2004-01-15 | Pentax Corp | Laser light source equipment for probe |
| CN101635251B (en) * | 2008-07-24 | 2013-01-23 | 台湾积体电路制造股份有限公司 | Rinsing wafers using composition-tunable rinse water in chemical mechanical polish |
| CN101425449B (en) * | 2007-11-01 | 2013-04-03 | 株式会社半导体能源研究所 | Method for manufacturing semiconductor substrate, semiconductor device and electronic device |
| CN106654850A (en) * | 2015-07-14 | 2017-05-10 | 中国科学院大连化学物理研究所 | Deep UV-visible region wavelength continuously adjustable nanosecond and picosecond pulsed laser |
| CN207743198U (en) * | 2017-06-09 | 2018-08-17 | 苏晋苗 | A kind of laser chip planarization processing unit (plant) |
-
2017
- 2017-06-09 CN CN201710433770.9A patent/CN107293483A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0542382A (en) * | 1991-08-08 | 1993-02-23 | Amada Co Ltd | Laser beam processing method using higher harmonic wave of yag laser |
| JP2004008381A (en) * | 2002-06-05 | 2004-01-15 | Pentax Corp | Laser light source equipment for probe |
| CN101425449B (en) * | 2007-11-01 | 2013-04-03 | 株式会社半导体能源研究所 | Method for manufacturing semiconductor substrate, semiconductor device and electronic device |
| CN101635251B (en) * | 2008-07-24 | 2013-01-23 | 台湾积体电路制造股份有限公司 | Rinsing wafers using composition-tunable rinse water in chemical mechanical polish |
| CN106654850A (en) * | 2015-07-14 | 2017-05-10 | 中国科学院大连化学物理研究所 | Deep UV-visible region wavelength continuously adjustable nanosecond and picosecond pulsed laser |
| CN207743198U (en) * | 2017-06-09 | 2018-08-17 | 苏晋苗 | A kind of laser chip planarization processing unit (plant) |
Non-Patent Citations (1)
| Title |
|---|
| 陈林 等: "《激光抛光》", 《激光与光电子学进展》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6077785A (en) | Ultrasonic processing of chemical mechanical polishing slurries | |
| Zhong | Advanced polishing, grinding and finishing processes for various manufacturing applications: a review | |
| Malik et al. | Manufacturability of the CMP process | |
| US8039397B2 (en) | Using optical metrology for within wafer feed forward process control | |
| KR100773165B1 (en) | Semiconductor wafer processing apparatus and processing method | |
| US6325698B1 (en) | Cleaning method and polishing apparatus employing such cleaning method | |
| US20200343102A1 (en) | Wafer producing method and wafer producing apparatus | |
| JP2009117782A (en) | Flattening method and flattening apparatus | |
| TW201021969A (en) | Substrate polishing apparatus and method of polishing substrate using the same | |
| CN109465739B (en) | Semiconductor wafer photoelectrochemistry mechanical polishing processingequipment | |
| CN107652900B (en) | A kind of gallium nitride wafer optical electro-chemistry machine polishing liquor and polishing method | |
| CN109693039B (en) | Method for laser polishing of surface of silicon wafer | |
| CN108856128A (en) | Regulation room component | |
| CN109087845B (en) | Monocrystalline material polishing device and method based on inductively coupled plasma | |
| CN207743198U (en) | A kind of laser chip planarization processing unit (plant) | |
| CN101459124A (en) | Chemical mechanical grinding method and wafer cleaning method | |
| JP2000031100A (en) | Slurry supply system for semiconductor cmp process | |
| CN208256622U (en) | A kind of laser chemistry wafer planarization processing unit (plant) | |
| CN107293483A (en) | A kind of laser chip planarization processing unit (plant) and method | |
| CN102485424A (en) | Polishing device and abnormality treatment method thereof | |
| CN102814725A (en) | Chemical mechanical polishing method | |
| US6028006A (en) | Method for maintaining the buffer capacity of siliceous chemical-mechanical silicon polishing slurries | |
| CN211858597U (en) | Processing device for integrated circuit wafer regeneration process | |
| Jeong et al. | Chemical mechanical planarization of copper bumps on printed circuit board | |
| JP2014203990A (en) | Polishing method of wide-gap semiconductor and polishing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20191224 Address after: 604-1, floor 6, building 1, No.22, Ronghua Middle Road, Beijing Economic and Technological Development Zone, Daxing District, Beijing 102199 Applicant after: Beijing xinzhilu enterprise management center (limited partnership) Address before: 14 Lane 12, Gaofeng Road, Xinzhu, Taiwan, China Applicant before: Su Jinmiao |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171024 |