CN107652900B - A kind of gallium nitride wafer optical electro-chemistry machine polishing liquor and polishing method - Google Patents
A kind of gallium nitride wafer optical electro-chemistry machine polishing liquor and polishing method Download PDFInfo
- Publication number
- CN107652900B CN107652900B CN201710994767.4A CN201710994767A CN107652900B CN 107652900 B CN107652900 B CN 107652900B CN 201710994767 A CN201710994767 A CN 201710994767A CN 107652900 B CN107652900 B CN 107652900B
- Authority
- CN
- China
- Prior art keywords
- polishing
- chip
- polishing fluid
- nano
- abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a kind of polishing fluids and its method for the mechanical polishing of ultraviolet assistant chemical, including nano-abrasive and oxidant；The content of the nano-abrasive is 0.05-20wt.%, and the content of the oxidant is 0.1-10wt.%.Polishing fluid provided by the invention is mainly used for the ultraviolet assistant chemical mechanical polishing processing of gallium nitride wafer, high removal rate and low surface roughness can be obtained by carrying out polishing to gallium nitride wafer using the polishing fluid, the polishing fluid ingredient is simple simultaneously, nano silica or cerium oxide abrasive grain concentration are extremely low, the convenient post-treatment of polishing fluid, environmental pollution are small.
Description
Technical field
The invention belongs to polishing technical field, in particular to a kind of gallium nitride wafer optical electro-chemistry machine polishing liquor and
Polishing method.
Technical background
Third generation semiconductor represents material such as gallium nitride, compared with the first and second generation semiconductor material, the big thermal conductivity of forbidden bandwidth
Rate is high, and breakdown electric field is high, and electron saturation velocities height and capability of resistance to radiation are strong, is more suitable for production high temperature, high frequency, high power, resists
Radiate high power device.When gallium nitride wafer is as device or LED substrate, it is desirable that material has high surface integrity (such as low
Surface roughness, the surfaces/sub-surface damage such as no marking, micro-crack, dislocation and residual stress), and in gallium nitride wafer
Surface/sub-surface damage that material can be generated in process of lapping, need to carry out chip polishing remove the surface of chip/
Sub-surface damage and obtain ultra-smooth surface.
Gallium nitride material bond energy is big, hardly chemically reacts with any acid-base reagent under room temperature, belongs to typical case
Hard crisp difficult-to-machine material, removal rate is low in chemically mechanical polishing process leads to long processing time, an equal system at high cost
Column problem.Hideo Aida is published in " Mrs Proceedings ", 2013,1560 (19): the article of 2659-2666 reports nitrogen
The chemically mechanical polishing removal rate for changing gallium chip only has 17nm/h, if after gallium nitride surface oxidation modification capable of being generated gallium oxide
Removal rate can be to 7 μm/h, it is indicated that in the CMP process of gallium nitride wafer, the oxidation modification efficiency of chip is wafered
Learn the rate determining step of mechanical polishing removal rate.Therefore it can be thrown by improving the oxidation modification efficiency of chip during the polishing process to improve
Material removal rate in photoreduction process.Gallium nitride can directly be irradiated using ultraviolet light and be arrived as a kind of semiconductor material
The mode of semiconductor wafer surface generates photo-generate electron-hole pair, and the strong oxidizer in polishing fluid wins light induced electron and promotes light
The separation of raw electron-hole, the hole for recycling separation to reach wafer surface aoxidize wafer surface, and then improve wafer polishing
Material removal rate in the process.
Since the chemically mechanical polishing removal rate of gallium nitride wafer is low, high nano silica abrasive grain would generally be used
The polishing fluid of concentration.If Hideo Aida is published in " Journal of the Electrochemical Society ", 2011,
158 (12): being reported in the experiment in their seminars in the document on H1206, and when polishing GaN using silica solution, abrasive grain is dense
Degree is up to 40wt%, and domestic Tsinghua University Pan Guoshun seminar is published in " Tribology International ", and 2016,110
Document in report, their gallium nitride wafers chemically mechanical polishing experiment in solid abrasive particles concentration also be up to 30wt%, and
Obtain the removal rate of about 120nm/h.However, using the polishing fluid of high wear particle concentration cause the polishing fluid in polishing at
This accounting is high, while also bringing along the increase of polishing fluid post-processing difficulty.D.E.Speed is in Advances in Chemical
P.27, Mechanical Planarization (CMP) points out that polishing adds in Woodhead Publishing (2016) document
Work production unit is pre-processed before discharging in polishing fluid, producer generally use coagulation-flocculation process to waste liquid at
Reason, by sedimentation, filtering, flotation, complex disposal process, post processing cost is high, so increase polishing manufacturer at
This, in addition once processing is not good at, the polishing fluid of high wear particle concentration causes serious pollution to environment.
Therefore, the removal rate for gallium nitride wafer material in the presence of current chemically mechanical polishing process
Low, long processing time, polishing fluid complicated component used, wear particle concentration height easily causes under the background of environmental pollution, needs searching one
Kind of removal rate is higher, ingredient is more simple and environmentally-friendly, the lower polishing fluid of wear particle concentration is to meet the high efficiency manufacture of semiconductor devices
With increasingly strict environmental requirement.
Summary of the invention
The present invention is lower for the chemically mechanical polishing removal rate of gallium nitride in the prior art, and the surface quality after polishing is poor
Present Research, a kind of gallium nitride wafer optical electro-chemistry machine polishing liquor, including nano-abrasive, oxidant and water are provided；It is described
The content of nano-abrasive is the 0.05-20wt.% of polishing fluid；The content of the oxidant is the 0.1-10wt.% of polishing fluid.
Existing polishing fluid wear particle concentration is higher, and translucency is relatively poor, and polishing fluid used in the present invention passes through oxygen
Agent oxidation and the mechanical removal of nano-abrasive synergistic effect realize fast removal rate.
Optical electro-chemistry mechanical polishing of the present invention refers on existing chemically mechanical polishing basis, introduces purple
Outside line directly irradiates and is polished semiconductor workpiece, and it is modified by machine that semiconductor workpiece generates optical electro-chemistry under the auxiliary of ultraviolet light
A kind of processing method of tool polishing removal.
The oxidant is potassium peroxydisulfate, sodium peroxydisulfate, ammonium persulfate, hydrogen peroxide, mistake as a preferred technical solution,
At least one of sodium oxide molybdena, potassium peroxide, potassium permanganate, sodium hypochlorite, postassium hypochlorite, hypochlorous acid ammonia.
The polishing fluid further includes pH adjusting agent as a preferred technical solution,.
The pH adjusting agent is potassium hydroxide, sodium hydroxide, ammonium hydroxide, sodium bicarbonate, phosphorus as a preferred technical solution,
At least one of sour disodium hydrogen, phosphoric acid, acetic acid, hydrochloric acid, nitric acid, sulfuric acid.
The average grain diameter of the nano-abrasive is 15~100nm as a preferred technical solution,；More preferably 15~
30nm, the abrasive grain of fine grain can make polishing fluid transparency high, and the wafer surface quality after polishing is more preferable.
The nano-abrasive is nano-cerium oxide abrasive grain or nano silica abrasive grain as a preferred technical solution,.
The polishing fluid further includes catalyst as a preferred technical solution, the catalyst be platinum, gold, rhodium, palladium,
At least one of iridium and its catalysts supported on carbon, the addition of catalyst can effectively improve the surface modification rate of chip,
And then improve polish removal rate.
The partial size of the catalyst is 15-50nm as a preferred technical solution,；Content is the 0.0001- of polishing fluid
0.0005wt.%.
Polishing fluid provided by the invention is mechanically polished for optical electro-chemistry, is thrown using the polishing fluid to gallium nitride wafer
Light processing can make removal rate reach 201.1nm/h, and material removing rate is much higher than existing report, and surface roughness can achieve~
1.63nm, removal rate and the surface roughness that can reach are much better than existing report.The polishing fluid ingredient is simple simultaneously, nanometer
Wear particle concentration is extremely low, so that the light transmittance of polishing fluid is good, the intensity that UV light permeability polishing fluid reaches wafer surface is high, obtains more
Good modified effect；In addition the convenient post-treatment of polishing fluid, the wear particle concentration in polishing fluid is low, gives up after can reducing polishing
The post processing cost of liquid, environmental pollution are small.
The present invention also provides a kind of optical electro-chemistry mechanical polishing methods of semiconductor, comprising the following steps:
(1) it secures the wafer in polishing liquid pool with polishing liquid pool around axial-rotation, the polishing fluid polished in liquid pool is complete
Submerge chip；
(2) polishing pad is fixed on buff spindle, generates relative motion through driving and chip；The polishing pad and chip
Contact area is less than the area of chip；
(3) ultraviolet light irradiation chip is used in polishing process.
Polishing pad and wafer contact area are smaller than wafer surface product, chip exposing residual surface can be made directly to receive ultraviolet
Light source it is online irradiation and be modified.
The ultraviolet light that ultraviolet source issues can the non-polished pad occlusion part of chip be arrived in online irradiation always during the polishing process
Point, chip is modified in real time and then optical electro-chemistry polishing is carried out to chip.
Preferably, the area of the polishing pad is less than the area of chip.
Preferably, the polishing pad is pasted on buff spindle.
Preferably, the buff spindle can also be moved planar while around axial-rotation, and then drive polishing pad choosing
Polish wafer surface to selecting property.
Preferably, polish pressure can be loaded by buff spindle in polishing process.
The polishing pad load has catalyst as a preferred technical solution,.
The catalyst is supported on polishing pad using following process as a preferred technical solution:
A) first the catalyst of Nano Particle is dispersed in deionized water using supersonic oscillations；
B) polishing pad is immersed in the deionized water for being dispersed with catalyst again, sonic oscillation 1-10min, so that catalyst
It is supported on polishing pad.
The catalyst is dispersed in polishing fluid as a preferred technical solution,.
The catalyst is dispersed in polishing fluid using following process as a preferred technical solution: catalyst is first added
In polishing fluid, then it is set to be uniformly dispersed by sonic oscillation.
The polishing pad is the polishing pad containing abrasive material as a preferred technical solution, the abrasive material be cerium oxide or
One or both of silica.
The material of the polishing pad is polyurethane polishing pad, non-woven fabrics polishing pad, flannelette throwing as a preferred technical solution,
The one of which of light pad.
The ultraviolet source is that LED ultraviolet source, mercury lamp ultraviolet source, xenon lamp are ultraviolet as a preferred technical solution,
One or more of light source, deuterium lamp ultraviolet source, wavelength < 400nm
Compared with prior art: the optical electro-chemistry mechanical polishing method of semiconductor provided by the invention has the advantage that
1. it is high to polish removal efficiency.Present invention employs ultraviolet light on-line uninterruptions to irradiate wafer surface mode, is polishing
It irradiates wafer surface always in the process, can efficiently be modified chip, then modified layer is removed mechanically by polishing pad, in turn
Improve the removal rate in entire polishing process.
2. catalyst can catalysed promoted chip be modified in the case where ultraviolet lighting, improves entire optical electro-chemistry machinery and throw
Material removing rate in photoreduction process.
3. be pasted with polishing pad rubbing head can around axial-rotation can also random shift position, and in the auxiliary of ultraviolet lighting
It helps lower fixed point to polish a certain position of chip, realizes the fixed point polishing removal of chip.
4. the rubbing head for being pasted with polishing pad can also random shift position around axial-rotation, it is ensured that polishing process
The uniformity that middle rubbing head moves on the wafer.
Detailed description of the invention
3 width of attached drawing of the present invention
Fig. 1 is the surface topography before GaN wafer polishing；In Fig. 1, (a) Olympus microscopy surface feature image, (b)
ZYGO white light interferometer surface topography image；
Fig. 2 is the surface topography after the GaN wafer processing using the polishing fluid in embodiment 4；In Fig. 2, (a) Olympus
Microscopy surface feature image, (b) ZYGO white light interferometer surface topography image Ra 1.626nm；
Fig. 3 is Tyndall effect and polishing fluid transparency and colloid effect diagram of the beam of laser by polishing fluid.
Specific embodiment
(1) acetone, alcohol are successively used, deionized water cleaning GaN simultaneously weighs, and material removing rate uses GaN wafer quality
Variation converted.Measure the original shape on GaN wafer surface respectively using Olympus microscope and ZYGO white light interferometer
Shown in looks such as Fig. 1 (a), (b), initial surface is prepared using hydride vapor phase epitaxy method (HVPE), and there are many sizes for wafer surface
Different hexagonal protrusion, larger height of projection have reached about 1 μm, and surface quality is poor.
(2) GaN wafer is adhesively fixed on the work piece holder of polishing machine with paraffin；Polishing pad is SUBA 800；GaN is brilliant
Piece is completely submerged in polishing fluid, and the ingredient of polishing fluid is as shown in table 1, and surplus is and ionized water.
(3) GaN wafer revolving speed 60rpm, polishing pad revolving speed 390rpm, polish pressure 6.5psi, ultraviolet light intensity 20-30mW
cm-2Polish duration 5h.
(4) heating and melting paraffin removes chip and successively uses acetone, and alcohol dries up after deionized water cleaning, weighs matter
Amount, the surface roughness after measurement polishing.
1. embodiment condition of table and polishing effect
After GaN wafer polishing, surface quality improves obviously, and as shown in Fig. 2 (a), hexagonal protrusion disappears, and surface becomes flat
Whole, roughness value is reduced to about 1.63nm, while removal rate has also reached 202.1nm/min.Measuring surface form after polishing
As a result as shown in Fig. 2 (b).The present invention has polishing removal rate fast, and polishing front and back roughness is obviously improved, and polishing pad can be to chip
Surface carries out fixed point polishing, easy to operate, the flexible adjustable advantage of technological parameter.
Claims (9)
1. a kind of gallium nitride wafer optical electro-chemistry mechanical polishing method, it is characterised in that:
The polishing of chip is carried out using polishing pad and polishing fluid；
The contact area of the polishing pad and chip is less than the area of chip；
The polishing fluid includes nano-abrasive, oxidant and water；The content of the nano-abrasive is the 0.18- of polishing fluid
2wt.%；The content of the oxidant is the 0.1-10wt.% of polishing fluid；
The part blocked in polishing process using the ultraviolet source irradiation non-polished pad of chip makes chip expose residual surface direct
Receive the online irradiation of ultraviolet source and is modified.
2. polishing method according to claim 1, it is characterised in that: the oxidant be potassium peroxydisulfate, sodium peroxydisulfate,
Ammonium persulfate, hydrogen peroxide, sodium peroxide, potassium peroxide, potassium permanganate, sodium hypochlorite, postassium hypochlorite, in hypochlorous acid ammonia at least
It is a kind of.
3. polishing method according to claim 1, it is characterised in that: the polishing fluid further includes pH adjusting agent.
4. polishing method according to claim 3, it is characterised in that: the pH adjusting agent is potassium hydroxide, hydroxide
At least one of sodium, ammonium hydroxide, sodium bicarbonate, disodium hydrogen phosphate, phosphoric acid, acetic acid, hydrochloric acid, nitric acid, sulfuric acid.
5. polishing method according to claim 1, it is characterised in that: the average grain diameter of the nano-abrasive be 15~
100nm。
6. polishing method according to claim 1, it is characterised in that: the nano-abrasive is nano-cerium oxide abrasive grain or receives
Rice silica abrasive grain.
7. polishing method according to claim 1, it is characterised in that: the polishing fluid further includes catalyst, and described urges
Agent is at least one of platinum, gold, rhodium, palladium, iridium and its catalysts supported on carbon.
8. polishing method according to claim 7, it is characterised in that: the partial size of the catalyst is 15-50nm, and content is
The 0.0001-0.0005wt.% of polishing fluid.
9. the method according to claim 1, wherein the following steps are included:
(1) it secures the wafer in polishing liquid pool with polishing liquid pool around axial-rotation, the polishing fluid polished in liquid pool is totally submerged
Chip；
(2) polishing pad is fixed on buff spindle, generates relative motion through driving and chip；
(3) ultraviolet light irradiation chip is used in polishing process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710994767.4A CN107652900B (en) | 2017-10-23 | 2017-10-23 | A kind of gallium nitride wafer optical electro-chemistry machine polishing liquor and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710994767.4A CN107652900B (en) | 2017-10-23 | 2017-10-23 | A kind of gallium nitride wafer optical electro-chemistry machine polishing liquor and polishing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107652900A CN107652900A (en) | 2018-02-02 |
| CN107652900B true CN107652900B (en) | 2019-10-29 |
Family
ID=61119310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710994767.4A Active CN107652900B (en) | 2017-10-23 | 2017-10-23 | A kind of gallium nitride wafer optical electro-chemistry machine polishing liquor and polishing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107652900B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109616412A (en) * | 2018-12-14 | 2019-04-12 | 大连理工大学 | A kind of semiconductor wafer processing method that photochemistry is combined with mechanical polishing |
| CN110303385B (en) * | 2019-06-28 | 2021-03-02 | 中国人民解放军国防科技大学 | Monocrystalline silicon nondestructive polishing method based on liquid phase polishing environment regulation and control |
| CN113618502B (en) * | 2021-08-13 | 2023-03-31 | 广东工业大学 | Method and system for calculating material removal rate of diamond wafer polishing |
| CN113894695B (en) * | 2021-10-29 | 2022-12-30 | 广东先导微电子科技有限公司 | Double-sided polishing method of gallium antimonide wafer and gallium antimonide double-polished wafer |
| CN115558427A (en) * | 2022-10-24 | 2023-01-03 | 浙江奥首材料科技有限公司 | Polishing solution based on micro-electrolysis-Fenton oxidation system, preparation method and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104804649A (en) * | 2015-04-24 | 2015-07-29 | 清华大学 | Polishing solution for gallium nitride |
| CN105773399A (en) * | 2016-03-29 | 2016-07-20 | 清华大学 | Polishing solution, polishing machine and polishing method |
| CN105940076A (en) * | 2014-02-06 | 2016-09-14 | 旭日化成工业株式会社 | Polishing abrasive particle, production method therefor, polishing method, polishing device, and slurry |
| CN106189872A (en) * | 2016-07-13 | 2016-12-07 | 清华大学 | A kind of polishing composition and preparation, finishing method |
| CN106398544A (en) * | 2016-07-27 | 2017-02-15 | 清华大学 | A CMP polishing composition suitable for a gallium nitride material |
-
2017
- 2017-10-23 CN CN201710994767.4A patent/CN107652900B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105940076A (en) * | 2014-02-06 | 2016-09-14 | 旭日化成工业株式会社 | Polishing abrasive particle, production method therefor, polishing method, polishing device, and slurry |
| CN104804649A (en) * | 2015-04-24 | 2015-07-29 | 清华大学 | Polishing solution for gallium nitride |
| CN105773399A (en) * | 2016-03-29 | 2016-07-20 | 清华大学 | Polishing solution, polishing machine and polishing method |
| CN106189872A (en) * | 2016-07-13 | 2016-12-07 | 清华大学 | A kind of polishing composition and preparation, finishing method |
| CN106398544A (en) * | 2016-07-27 | 2017-02-15 | 清华大学 | A CMP polishing composition suitable for a gallium nitride material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107652900A (en) | 2018-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107652900B (en) | A kind of gallium nitride wafer optical electro-chemistry machine polishing liquor and polishing method | |
| CN107641835B (en) | A kind of method of semiconductor wafer optical electro-chemistry mechanical polishing | |
| Lee et al. | Approaches to sustainability in chemical mechanical polishing (CMP): a review | |
| US7651625B2 (en) | Catalyst-aided chemical processing method and apparatus | |
| CN105773399A (en) | Polishing solution, polishing machine and polishing method | |
| US20240059557A1 (en) | Hydrogen production apparatus, hydrogen production method, silicon fine particles for hydrogen production, and production method for silicon fine particles for hydrogen production | |
| US10163645B2 (en) | Method for processing wide-bandgap semiconductor substrate and apparatus therefor | |
| US6074546A (en) | Method for photoelectrochemical polishing of silicon wafers | |
| JP2003113370A (en) | Slurry for chemical and mechanical polishing (cmp), method of producing semiconductor device, apparatus for producing semiconductor device and method of handling cmp slurry | |
| JP2008182188A (en) | Cleaning fluid for electronic material and cleaning method | |
| CN109866084A (en) | A kind of UV photocatalysis assistant chemical mechanical polishing apparatus and polishing method | |
| Cui et al. | Unprecedented atomic surface of silicon induced by environmentally friendly chemical mechanical polishing | |
| Zhong | Recent developments and applications of chemical mechanical polishing | |
| JP6566303B2 (en) | Polishing method and apparatus using micro / nano bubbles | |
| CN107384218A (en) | The polishing fluid and polishing method of a kind of Cdl-x_Znx_Te | |
| Ou et al. | Photoelectrochemically combined mechanical polishing of n-type gallium nitride wafer by using metal nanoparticles as photocathodes | |
| Shi et al. | Polishing of diamond, SiC, GaN based on the oxidation modification of hydroxyl radical: status, challenges and strategies | |
| Yan et al. | Controllable electrochemical-magnetorheological finishing of single-crystal gallium nitride wafers | |
| Jiang et al. | A synergistic polishing technology by mixed abrasives with photocatalysis and fenton reaction | |
| Song et al. | Effect of external electric field on ultraviolet-induced nanoparticle colloid jet machining | |
| JP7281226B2 (en) | Photoelectrochemical mechanical polishing processing apparatus and processing method for semiconductor wafer | |
| CN116038551B (en) | Photochemical mechanical grinding method and photosensitive active grinding liquid | |
| Zeng et al. | Recent Advances in Chemical Mechanical Polishing Technologies of Silicon Carbide | |
| JP2016059973A (en) | Regeneration method of polishing slurry and production method of substrate | |
| Chiwaya et al. | Fundamental Verification of Ultraviolet-Excited Abrasion and Polishing Characteristics of Copper-Study of Luminescence Machining |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |