CN107286588A - A kind of special encapsulating material of LED and its preparation technology - Google Patents
A kind of special encapsulating material of LED and its preparation technology Download PDFInfo
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- CN107286588A CN107286588A CN201710652325.1A CN201710652325A CN107286588A CN 107286588 A CN107286588 A CN 107286588A CN 201710652325 A CN201710652325 A CN 201710652325A CN 107286588 A CN107286588 A CN 107286588A
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- encapsulating material
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/014—Additives containing two or more different additives of the same subgroup in C08K
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/08—Stabilised against heat, light or radiation or oxydation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
Abstract
The invention discloses a kind of special encapsulating material of LED and its preparation technology, encapsulating material component includes 20 40 parts of modifying epoxy resin by organosilicon by weight, 20 50 parts of the high phenyl vinyl polysiloxane of methyl, 10 20 parts of graphene oxide, 5 15 parts of dichloromethyl phenylsilane, 3 10 parts of white carbon, 2, 5 10 parts of 6 di-t-butyl, 4 methylphenol, 28 parts of butylated hydroxy anisole, preparation technology of the present invention is simple, obtained encapsulating material is ageing-resistant, compressive property is good, and hardness is high, also there is excellent antioxygenic property simultaneously, the service life of LED can be extended.
Description
Technical field
Techniques of preserving field is prepared the present invention relates to encapsulating material, specially a kind of special encapsulating material of LED and its system
Standby technique.
Background technology
LED is new generation of green environment-friendly products, is widely used in automobile, illumination, electronic equipment backlight, traffic lights
Deng field.In order to protect chip, prevent the undesirable element of external environment condition from being caused damage to chip, extend LED service life,
Its chip is packaged.The traditional material for being presently used for LED encapsulation is epoxy resin, and cheap application is wide, and sets
The features such as fat has excellent electrical insulating property, sealing, dielectric properties, caking property in itself, makes it encapsulate market at home and account for
Sizable ratio.But it is poor due to itself there is humidity resistance and weatherability, and matter is crisp, fatiguability, toughness are low
The problems such as with heat dispersion difference, cause its service life short.
The content of the invention
It is an object of the invention to provide a kind of special encapsulating material of LED and its preparation technology, to solve above-mentioned background
The problem of being proposed in technology.
To achieve the above object, the present invention provides following technical scheme：A kind of special encapsulating material of LED, encapsulating material
Component includes that 20-40 parts of modifying epoxy resin by organosilicon, methyl be high phenyl vinyl polysiloxane 20-50 parts, oxygen by weight
10-20 parts of graphite alkene, 5-15 parts of dichloromethyl phenylsilane, 3-10 parts of white carbon, 2,6- di-tert-butyl-4-methy phenols 5-
10 parts, 2-8 parts of butylated hydroxy anisole.
It is preferred that, the preferred composition proportion of encapsulating material component is：30 parts of modifying epoxy resin by organosilicon, the high phenyl of methyl
35 parts of vinyl polysiloxane, 15 parts of graphene oxide, 10 parts of dichloromethyl phenylsilane, 7 parts of white carbon, 2,6- di-t-butyls-
8 parts of 4- methylphenols, 5 parts of butylated hydroxy anisole.
It is preferred that, its preparation technology comprises the following steps：
A, will the high phenyl vinyl polysiloxane of modifying epoxy resin by organosilicon, methyl mix after dissolved by heating, stir afterwards
Uniformly；
B, addition graphene oxide, dichloromethyl phenylsilane, white carbon in the mixture that step A is obtained, are added after mixing
It is sufficiently stirred for, stirred tank rotating speed is 1000-2000 revs/min, and mixing time is 5min-10min, is stood in stirred tank
10min, obtains mixture；
C, 8 parts of 2,6- di-tert-butyl-4-methy phenols, butylated hydroxy anisole are added in the mixture that step B is obtained, fully
Deaeration processing is carried out after mixing；
D, will step C deaerations handle after mixture add mould in solidified, solidification temperature be 160 DEG C -170 DEG C, solidify
After be cooled to room temperature, prepare LED encapsulating materials.
Compared with prior art, the beneficial effects of the invention are as follows：Preparation technology of the present invention is simple, and obtained encapsulating material is resistance to
Aging, compressive property are good, and hardness is high, while also having excellent antioxygenic property, can extend the service life of LED；
The graphene oxide added in the present invention can improve the overall thermal conductivity factor of encapsulating material；In addition, added in the present invention 2,
6- di-tert-butyl-4-methy phenols, butylated hydroxy anisole, it is possible to increase the inoxidizability of encapsulating material, prevent its Surface Oxygen
Change, influence service life.
Embodiment
The technical scheme in the embodiment of the present invention is clearly and completely described below, it is clear that described embodiment
Only a part of embodiment of the invention, rather than whole embodiments.Based on the embodiment in the present invention, the common skill in this area
The every other embodiment that art personnel are obtained under the premise of creative work is not made, belongs to the model that the present invention is protected
Enclose.
The present invention provides following technical scheme：A kind of special encapsulating material of LED, encapsulating material component is wrapped by weight
Include high phenyl vinyl polysiloxane 20-50 parts 20-40 parts of modifying epoxy resin by organosilicon, methyl, 10-20 parts of graphene oxide,
5-15 parts of dichloromethyl phenylsilane, 3-10 parts of white carbon, 5-10 parts of 2,6- di-tert-butyl-4-methy phenols, butylhydroxy fennel
Fragrant ether 2-8 parts.
Embodiment one：
Encapsulating material component includes 20 parts of modifying epoxy resin by organosilicon, the high phenyl vinyl polysiloxane 20 of methyl by weight
Part, 10 parts of graphene oxide, 5 parts of dichloromethyl phenylsilane, 3 parts of white carbon, 5 parts of 2,6- di-tert-butyl-4-methy phenols, fourth
2 parts of base BHA.
The preparation technology of the present embodiment comprises the following steps：
A, will the high phenyl vinyl polysiloxane of modifying epoxy resin by organosilicon, methyl mix after dissolved by heating, stir afterwards
Uniformly；
B, addition graphene oxide, dichloromethyl phenylsilane, white carbon in the mixture that step A is obtained, are added after mixing
It is sufficiently stirred in stirred tank, stirred tank rotating speed is 1000 revs/min, and mixing time is 5min, stands 10min, mixed
Thing；
C, 2,6- di-tert-butyl-4-methy phenols, butylated hydroxy anisole are added in the mixture that step B is obtained, it is fully mixed
Deaeration processing is carried out after conjunction；
D, will step C deaerations handle after mixture add mould in solidified, solidification temperature be 160 DEG C, after solidification cooling
To room temperature, LED encapsulating materials are prepared.
Embodiment two：
Encapsulating material component includes 40 parts of modifying epoxy resin by organosilicon, the high phenyl vinyl polysiloxane 50 of methyl by weight
Part, 20 parts of graphene oxide, 15 parts of dichloromethyl phenylsilane, 10 parts of white carbon, 2,6- di-tert-butyl-4-methy phenols 10
Part, 8 parts of butylated hydroxy anisole.
The preparation technology of the present embodiment comprises the following steps：
A, will the high phenyl vinyl polysiloxane of modifying epoxy resin by organosilicon, methyl mix after dissolved by heating, stir afterwards
Uniformly；
B, addition graphene oxide, dichloromethyl phenylsilane, white carbon in the mixture that step A is obtained, are added after mixing
It is sufficiently stirred in stirred tank, stirred tank rotating speed is 2000 revs/min, and mixing time is 10min, stands 10min, mixed
Thing；
C, 2,6- di-tert-butyl-4-methy phenols, butylated hydroxy anisole are added in the mixture that step B is obtained, it is fully mixed
Deaeration processing is carried out after conjunction；
D, will step C deaerations handle after mixture add mould in solidified, solidification temperature be 170 DEG C, after solidification cooling
To room temperature, LED encapsulating materials are prepared.
Embodiment three：
Encapsulating material component includes 25 parts of modifying epoxy resin by organosilicon, the high phenyl vinyl polysiloxane 25 of methyl by weight
Part, 12 parts of graphene oxide, 6 parts of dichloromethyl phenylsilane, 4 parts of white carbon, 6 parts of 2,6- di-tert-butyl-4-methy phenols, fourth
3 parts of base BHA.
The preparation technology of the present embodiment comprises the following steps：
A, will the high phenyl vinyl polysiloxane of modifying epoxy resin by organosilicon, methyl mix after dissolved by heating, stir afterwards
Uniformly；
B, addition graphene oxide, dichloromethyl phenylsilane, white carbon in the mixture that step A is obtained, are added after mixing
It is sufficiently stirred in stirred tank, stirred tank rotating speed is 1200 revs/min, and mixing time is 6min, stands 10min, mixed
Thing；
C, 2,6- di-tert-butyl-4-methy phenols, butylated hydroxy anisole are added in the mixture that step B is obtained, it is fully mixed
Deaeration processing is carried out after conjunction；
D, will step C deaerations handle after mixture add mould in solidified, solidification temperature be 162 DEG C, after solidification cooling
To room temperature, LED encapsulating materials are prepared.
Example IV：
Encapsulating material component includes 35 parts of modifying epoxy resin by organosilicon, the high phenyl vinyl polysiloxane 40 of methyl by weight
Part, 18 parts of graphene oxide, 13 parts of dichloromethyl phenylsilane, 9 parts of white carbon, 9 parts of 2,6- di-tert-butyl-4-methy phenols,
7 parts of butylated hydroxy anisole.
The preparation technology of the present embodiment comprises the following steps：
A, will the high phenyl vinyl polysiloxane of modifying epoxy resin by organosilicon, methyl mix after dissolved by heating, stir afterwards
Uniformly；
B, addition graphene oxide, dichloromethyl phenylsilane, white carbon in the mixture that step A is obtained, are added after mixing
It is sufficiently stirred in stirred tank, stirred tank rotating speed is 1800 revs/min, and mixing time is 9min, stands 10min, mixed
Thing；
C, 2,6- di-tert-butyl-4-methy phenols, butylated hydroxy anisole are added in the mixture that step B is obtained, it is fully mixed
Deaeration processing is carried out after conjunction；
D, will step C deaerations handle after mixture add mould in solidified, solidification temperature be 168 DEG C, after solidification cooling
To room temperature, LED encapsulating materials are prepared.
Embodiment five：
Encapsulating material component includes 28 parts of modifying epoxy resin by organosilicon, the high phenyl vinyl polysiloxane 35 of methyl by weight
Part, 16 parts of graphene oxide, 12 parts of dichloromethyl phenylsilane, 8 parts of white carbon, 6 parts of 2,6- di-tert-butyl-4-methy phenols,
2 parts of butylated hydroxy anisole.
The preparation technology of the present embodiment comprises the following steps：
A, will the high phenyl vinyl polysiloxane of modifying epoxy resin by organosilicon, methyl mix after dissolved by heating, stir afterwards
Uniformly；
B, addition graphene oxide, dichloromethyl phenylsilane, white carbon in the mixture that step A is obtained, are added after mixing
It is sufficiently stirred in stirred tank, stirred tank rotating speed is 1400 revs/min, and mixing time is 8min, stands 10min, mixed
Thing；
C, 2,6- di-tert-butyl-4-methy phenols, butylated hydroxy anisole are added in the mixture that step B is obtained, it is fully mixed
Deaeration processing is carried out after conjunction；
D, will step C deaerations handle after mixture add mould in solidified, solidification temperature be 164 DEG C, after solidification cooling
To room temperature, LED encapsulating materials are prepared.
Embodiment six：
Encapsulating material component includes 30 parts of modifying epoxy resin by organosilicon, the high phenyl vinyl polysiloxane 35 of methyl by weight
Part, 15 parts of graphene oxide, 10 parts of dichloromethyl phenylsilane, 7 parts of white carbon, 8 parts of 2,6- di-tert-butyl-4-methy phenols,
5 parts of butylated hydroxy anisole.
The preparation technology of the present embodiment comprises the following steps：
A, will the high phenyl vinyl polysiloxane of modifying epoxy resin by organosilicon, methyl mix after dissolved by heating, stir afterwards
Uniformly；
B, addition graphene oxide, dichloromethyl phenylsilane, white carbon in the mixture that step A is obtained, are added after mixing
It is sufficiently stirred in stirred tank, stirred tank rotating speed is 1500 revs/min, and mixing time is 8min, stands 10min, mixed
Thing；
C, 2,6- di-tert-butyl-4-methy phenols, butylated hydroxy anisole are added in the mixture that step B is obtained, it is fully mixed
Deaeration processing is carried out after conjunction；
D, will step C deaerations handle after mixture add mould in solidified, solidification temperature be 165 DEG C, after solidification cooling
To room temperature, LED encapsulating materials are prepared.
Preparation technology of the present invention is simple, and obtained encapsulating material is ageing-resistant, compressive property is good, and hardness is high, while also having
There is excellent antioxygenic property, the service life of LED can be extended；The graphene oxide added in the present invention can improve envelope
The overall thermal conductivity factor of package material；In addition, 2, the 6- di-tert-butyl-4-methy phenols added in the present invention, butylhydroxy fennel
Ether, it is possible to increase the inoxidizability of encapsulating material, prevents its surface oxidation, influences service life.Through overtesting, add in the present invention
Plus graphene oxide amount of money white carbon, the refractive index of the LED encapsulating materials prepared can be made in 1.58-1.62, Shao
Family name's hardness is 60A to 70A, in addition, using the technological process of stirring, deaeration and solidification in the present invention, it is possible to increase encapsulating material
Adhesion strength, the adhesion strength of encapsulating material can be made to reach 7.2MPa.
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of changes, modification can be carried out to these embodiments, replace without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (3)
1. a kind of special encapsulating material of LED, it is characterised in that：Encapsulating material component includes organic silicon modified epoxy by weight
20-40 parts of oxygen tree fat, methyl are high phenyl vinyl polysiloxane 20-50 parts, 10-20 parts of graphene oxide, aminomethyl phenyl dichloro silicon
5-15 parts of alkane, 3-10 parts of white carbon, 5-10 parts of 2,6- di-tert-butyl-4-methy phenols, 2-8 parts of butylated hydroxy anisole.
2. the special encapsulating material of a kind of LED according to claim 1, it is characterised in that：Encapsulating material component is preferred
Composition proportion is：35 parts of the high phenyl vinyl polysiloxane of 30 parts of modifying epoxy resin by organosilicon, methyl, 15 parts of graphene oxide,
10 parts of dichloromethyl phenylsilane, 7 parts of white carbon, 8 parts of 2,6- di-tert-butyl-4-methy phenols, 5 parts of butylated hydroxy anisole.
3. realize a kind of preparation technology of the special encapsulating material of LED described in claim 1, it is characterised in that：It prepares work
Skill comprises the following steps：
A, will the high phenyl vinyl polysiloxane of modifying epoxy resin by organosilicon, methyl mix after dissolved by heating, stir afterwards
Uniformly；
B, addition graphene oxide, dichloromethyl phenylsilane, white carbon in the mixture that step A is obtained, are added after mixing
It is sufficiently stirred for, stirred tank rotating speed is 1000-2000 revs/min, and mixing time is 5min-10min, is stood in stirred tank
10min, obtains mixture；
C, 8 parts of 2,6- di-tert-butyl-4-methy phenols, butylated hydroxy anisole are added in the mixture that step B is obtained, fully
Deaeration processing is carried out after mixing；
D, will step C deaerations handle after mixture add mould in solidified, solidification temperature be 160 DEG C -170 DEG C, solidify
After be cooled to room temperature, prepare LED encapsulating materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710652325.1A CN107286588A (en) | 2017-08-02 | 2017-08-02 | A kind of special encapsulating material of LED and its preparation technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710652325.1A CN107286588A (en) | 2017-08-02 | 2017-08-02 | A kind of special encapsulating material of LED and its preparation technology |
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| Publication Number | Publication Date |
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| CN107286588A true CN107286588A (en) | 2017-10-24 |
Family
ID=60104298
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| CN201710652325.1A Withdrawn CN107286588A (en) | 2017-08-02 | 2017-08-02 | A kind of special encapsulating material of LED and its preparation technology |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107760034A (en) * | 2017-11-22 | 2018-03-06 | 马鞍山松鹤信息科技有限公司 | A kind of LED Special flexible encapsulating material and its manufacture craft |
| CN107955358A (en) * | 2017-12-15 | 2018-04-24 | 马鞍山松鹤信息科技有限公司 | A kind of special light LED material of optical electron and preparation method thereof |
| CN108511584A (en) * | 2018-03-12 | 2018-09-07 | 合肥同佑电子科技有限公司 | A kind of special encapsulating material of light emitting diode and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102516500A (en) * | 2011-11-30 | 2012-06-27 | 浙江中宙光电股份有限公司 | Organic silicon modified epoxy resin for packaging LED (Light Emitting Diode), and preparation method and application thereof |
| CN105255120A (en) * | 2015-08-21 | 2016-01-20 | 安徽吉思特智能装备有限公司 | Nanometer zinc borate-containing maleic anhydride-grafted polyphenyl ether modified epoxy resin composite used for LED packaging and preparation method thereof |
| CN105400211A (en) * | 2015-12-30 | 2016-03-16 | 殷志杰 | LED packaging material |
-
2017
- 2017-08-02 CN CN201710652325.1A patent/CN107286588A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102516500A (en) * | 2011-11-30 | 2012-06-27 | 浙江中宙光电股份有限公司 | Organic silicon modified epoxy resin for packaging LED (Light Emitting Diode), and preparation method and application thereof |
| CN105255120A (en) * | 2015-08-21 | 2016-01-20 | 安徽吉思特智能装备有限公司 | Nanometer zinc borate-containing maleic anhydride-grafted polyphenyl ether modified epoxy resin composite used for LED packaging and preparation method thereof |
| CN105400211A (en) * | 2015-12-30 | 2016-03-16 | 殷志杰 | LED packaging material |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107760034A (en) * | 2017-11-22 | 2018-03-06 | 马鞍山松鹤信息科技有限公司 | A kind of LED Special flexible encapsulating material and its manufacture craft |
| CN107955358A (en) * | 2017-12-15 | 2018-04-24 | 马鞍山松鹤信息科技有限公司 | A kind of special light LED material of optical electron and preparation method thereof |
| CN108511584A (en) * | 2018-03-12 | 2018-09-07 | 合肥同佑电子科技有限公司 | A kind of special encapsulating material of light emitting diode and preparation method thereof |
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