CN107275073A - A kind of preparation method of the adjustable nano thickness GdFeCo alloy firms of vertical magnetic characteristic - Google Patents
A kind of preparation method of the adjustable nano thickness GdFeCo alloy firms of vertical magnetic characteristic Download PDFInfo
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- CN107275073A CN107275073A CN201710432024.8A CN201710432024A CN107275073A CN 107275073 A CN107275073 A CN 107275073A CN 201710432024 A CN201710432024 A CN 201710432024A CN 107275073 A CN107275073 A CN 107275073A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/133—Amorphous metallic alloys, e.g. glassy metals containing rare earth metals
- H01F10/135—Amorphous metallic alloys, e.g. glassy metals containing rare earth metals containing transition metals
- H01F10/137—Amorphous metallic alloys, e.g. glassy metals containing rare earth metals containing transition metals containing cobalt
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/138—Amorphous metallic alloys, e.g. glassy metals containing nanocrystallites, e.g. obtained by annealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
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Abstract
The invention discloses a kind of simple and new method for preparing the vertical adjustable nano thickness GdFeCo alloy firms of magnetic characteristic, using magnetically controlled sputter method, in the range of certain ingredients, by control the thickness of growing film can effectively adjust preparation nano thickness alloy firm magnetic property, realize a wide range of consecutive variations of vertical magnetic characteristic, and realization can be grown on metal buffer (electrode) layer or oxide buffer layer, it is completely compatible with magnetoelectronic devices.This new technology for preparing the vertical adjustable nano thickness Ferrimagnetic GdFeCo alloy firms of magnetic characteristic is extremely simple, can include coercivity and saturation magnetization in the interior vertical magnetic characteristic for continuously adjusting film in a big way, meets magnetoelectronic devices difference in functionality layer and the material needs in ultrafast magneto-optical recorder field.
Description
Technical field
The invention belongs to magneto-electronicses and ultrafast magneto-optical recorder technical field, it is related to a kind of magnetic spin electronics that is used for passing
The preparation method of the adjustable nano thickness GdFeCo alloy firms of vertical magnetic characteristic of inductor component and ultrafast magneto-optical recorder.
Background technology
Currently with the fast development of emerging magnetic spin electronics, the Ferrimagnetic GdFeCo with perpendicular magnetic anisotropic is closed
Gold thin film material is used widely in the magnetoelectricity storage of high density, low-power consumption and magnetic sensor device field.In ultrafast optomagnetic note
Technical field is recorded, GdFeCo alloy firms can realize laser assisted across the magnetization inversion under the subpicosecond yardstick of magnetic compensation point
And the full optics magnetization inversion that femtosecond circularly polarized light and altra-fast fs heating are excited, it is also the head for developing ultrafast magnetic recording media
Material selection.
It is adjustable and can flexibly realize rich rare earth and the Net magnetic moment transformation of rich transitional type with vertical magnetic characteristic
GdFeCo thin-film materials, can use and meet as the difference in functionality such as free layer and pinning layer layer in magnetic random memory part
The requirement of ultrafast laser recording medium.Finding, there is vertical magnetic characteristic to include coercivity and the adjustable GdFeCo of saturation magnetization
The preparation method of alloy firm, in the particularly novel information storage such as current induced magnetization reversion of current magnetic spin electronics device
Device field and ultrafast magneto-optical recorder field are significant, and are possible to produce huge economic benefits.
The magnetic characteristic of GdFeCo alloy firms includes coercivity and saturation magnetization, with alloy firm middle rare earth Gd and mistake
The composition for crossing element is directly related.It can realize that different magnetic are special by changing the composition ratio of film middle rare earth and transition elements
Property.What the rare earth-transition race alloy firm in practical engineering application was prepared generally by the method for sputtering.Thin film composition can be by
The quantity of paster or position and changed on change combined tessera target using the ternary alloy three-partalloy target of different proportion composition.But
It is to prepare the sample with different magnetic characteristics in a big way to need destruction vacuum to change target, operation inconvenience, long preparation period.Moreover,
Cost price using the ternary alloy three-partalloy target of different proportion composition is high.
The content of the invention
The present invention proposes a kind of method for preparing the vertical adjustable nano thickness GdFeCo alloy firms of magnetic characteristic, and cost is low
It is honest and clean, short preparation period.When thin film sputtering grows, in certain proportion Composition Region, preparation is reached by changing the thickness of growing film
The vertical magnetic characteristic of film adjustable purpose in relative broad range, meets different magnetoelectronic devices functional layers and ultrafast magneto-optical recorder skill
The requirement of art zone material.
The technical scheme is that：
A kind of preparation method of the adjustable nano thickness GdFeCo alloy firms of vertical magnetic characteristic comprises the following steps：
1) the combined tessera target or ternary GdFeCo constituted high-purity rare-earth Gd paster and iron cobalt FeCo alloy target is closed
Gold target is put into the target position of magnetic control co-sputtering room；
2) the substrate placement after cleaning, drying is fixed on the chip bench of vacuum sputtering room, regulation target-substrate distance is 3-8cm；
3) it is evacuated to sputtering vacuum chamber and reaches vacuum 1 × 10-5Below Pa, leads to high purity argon as working gas,
Argon flow amount is 40-80sccm, and sputtering operating air pressure is set as 0.1-0.5Pa, pre-sputtering 10-30min；
4) chip bench rotates 5-15 circles per minute, the baffle plate between chip bench and sputtering target platform is opened, by being sputtered in base
The cushion that thickness is 1-5nm is formed on piece, the cushion is metal or oxide dielectric material；
5) combined tessera target described in magnetron sputtering or ternary GdFeCo alloys targets, sputtering power density are 4-5W/
cm2, by adjusting sputtering time in the GdFeCo alloy firms that growth thickness scope 5-50nm is sputtered on cushion, wherein described
The Gd elements mass fraction of GdFeCo alloy firms is 25-26.5%；
6) sputtering 1-3nm protective layer covering GdFeCo alloy firms.
Optionally, the cushion is Ta, Pd, Pt, SiO2、MgO、Al2O3Or Ta2O5。
Optionally, the protective layer is oxidation-resistant metallic material.
Further, the protective layer is Ta, Cu, Ru, Pt or Pd.
Optionally, the combined tessera target is that some high-purity Gd pasters are uniformly placed on into the FeCo alloy target
On, the high-purity Gd pasters are isosceles triangle and summit is overlapped with the center of circle of the FeCo alloy target.
Optionally, the drift angle of the high-purity Gd pasters is 20-40 degree, a length of FeCo alloy target radius length of waist
70-90%.
Compared with prior art, the invention has the advantages that：
By simply controlling the thickness of growing film, in the range of certain ingredients, nano thickness GdFeCo alloys can be achieved
The consecutive variations of film normal magnetic characteristic, obtain perpendicular coercive force and saturation magnetization with large change scope, meet
Magnetoelectronic devices difference in functionality layer and the material in ultrafast magneto-optical recorder field need.Combined tessera target middle rare earth need not be changed
The quantity of element paster and position or the ternary alloy three-partalloy target using different proportion composition, target is changed not destroying vacuum
In the case of, in 5-50nm thickness ranges, realize the consecutive variations of film normal magnetic characteristic.Perpendicular coercive force can be prepared very
Adjustable nano thickness alloy firm and the rich rare earth of realization and the thin-film material of rich transitional type in wide scope, and can be slow in metal
Rush to grow on (electrode) layer or oxide buffer layer and realize, it is completely compatible with magnetoelectronic devices.The preparation method is simple, operability
By force, it is reproducible, with low cost.The series with different vertical magnetic characteristic can be disposably prepared in the case where not destroying vacuum
GdFeCo alloy firm samples.
Below in conjunction with drawings and examples, the present invention will be further described.
Brief description of the drawings
Fig. 1 is the unusual Hall Curve of a) the GdFeCo films of different-thickness prepared by different sputtering times in embodiment 1；
B) thin film coercitive force and saturation magnetization and Thickness Variation curve.
Fig. 2 is the unusual Hall Curve of a) the GdFeCo films of different-thickness prepared by different sputtering times in embodiment 2；
B) thin film coercitive force and saturation magnetization and Thickness Variation curve.
Embodiment
Embodiment 1
By 3 high-purity Gd pasters (isosceles triangle, wherein drift angle are 28 degree, and a length of 2cm of waist, thickness is 1.5mm),
The even Fe for being placed on a diameter of 2 inches10Co90In alloys target, and make the summit of rare earth paster and the center of circle weight of FeCo alloy target
Close, high-purity described here, refer to that purity is more than or equal to 99.9%.The combined tessera target as magnetron sputtering target,
Combined tessera target is mounted on the sputtering target stand of magnetron sputtering chamber.
Si substrates placement after cleaning, drying is handled is put on the chip bench of magnetron sputtering chamber.Adjustment target-substrate distance is 5cm.
Vacuum chamber is sputtered, reaches that vacuum is better than 1 × 10-5After Pa, high purity argon is passed through as working gas,
The argon flow amount control that works is 60sccm, and sputtering operating air pressure is set as 0.3Pa.Pre-sputtering 20 minutes.Chip bench revolves revolutions per minute
Zhong10Quan, opens the baffle plate between chip bench and sputtering target platform, starts to sputter each layer film.First sputtering thickness delays for 2nm MgO
Rush layer.Then, by controlling sedimentation time to sputter the GdFeCo alloy firms that growth prepares different-thickness, sputtering power is close
Spend for 4.1W/cm2, alloy firm thickness control is the rare-earth Gd elemental composition in 6-45nm, the GdFeCo alloy firms of preparation
~26%；Finally, sputtering 2nm Ta protective mulches are to prevent oxidation.
Sputtering is finished.After after sample cooling, sample thin film is taken out.Fig. 1 is that the different-thickness that different sputtering times are obtained (divides
Not Wei 6,18,24,27,30,45nm) GdFeCo alloy firms performance test, it can be seen that with maximum coercitive
Alloy firm thickness is located at 27nm thickness or so.
Embodiment 2
By 3 high-purity Gd pasters (isosceles triangle, wherein drift angle are 28 degree, and a length of 2cm of waist, thickness is 1.5mm),
The even Fe for being placed on a diameter of 2 inches10Co90In alloys target, and make the summit of rare earth paster and the center of circle weight of FeCo alloy target
Close, high-purity described here, refer to that purity is more than or equal to 99.9%.The combined tessera target as magnetron sputtering target,
Combined tessera target is mounted on the sputtering target stand of magnetron sputtering chamber.
Si substrates placement after cleaning, drying is handled is put on the chip bench of magnetron sputtering chamber.Adjustment target-substrate distance is 5cm.
Vacuum chamber is sputtered, reaches that vacuum is better than 1 × 10-5After Pa, high purity argon is passed through as working gas,
The argon flow amount control that works is 60sccm, and sputtering operating air pressure is set as 0.3Pa.Pre-sputtering 20 minutes.Chip bench revolves revolutions per minute
Zhong10Quan, opens the baffle plate between chip bench and sputtering target platform, starts to sputter each layer film.First sputtering thickness delays for 3nm Ta
Rush layer.Then, by controlling sedimentation time to sputter the GdFeCo alloy firms that growth prepares different-thickness, sputtering power is close
Spend for 4.7W/cm2, alloy firm thickness control is the rare-earth Gd elemental composition in 6-45nm, the GdFeCo alloy firms of preparation
~25.5%；Finally, sputtering 2nm Ta protective mulches are to prevent oxidation.
Sputtering is finished.After after sample cooling, sample thin film is taken out.Fig. 2 is that the different-thickness that different sputtering times are obtained (divides
Not Wei 6,18,24,27,30,45nm) GdFeCo alloy firms performance test, it can be seen that with maximum coercitive
Alloy firm thickness is located at 27nm thickness or so.
Those of ordinary skill in the art understand, when design parameter and component of the invention changes in following ranges, remain to
Access technique effect same as the previously described embodiments or close：
A kind of preparation method of the adjustable nano thickness GdFeCo alloy firms of vertical magnetic characteristic comprises the following steps：
1) the combined tessera target or ternary GdFeCo constituted high-purity rare-earth Gd paster and iron cobalt FeCo alloy target is closed
Gold target is put into the target position of magnetic control co-sputtering room；The combined tessera target be some high-purity Gd pasters are uniformly placed on it is described
On FeCo alloy target, the high-purity Gd pasters are isosceles triangle and summit is overlapped with the center of circle of the FeCo alloy target, institute
The drift angle for stating high-purity Gd pasters is 20-40 degree, the 70-90% of a length of FeCo alloy target radius length of waist；
2) the substrate placement after cleaning, drying is fixed on the chip bench of vacuum sputtering room, regulation target-substrate distance is 3-8cm；
3) it is evacuated to sputtering vacuum chamber and reaches vacuum 1 × 10-5Below Pa, leads to high purity argon as working gas,
Argon flow amount is 40-80sccm, and sputtering operating air pressure is set as 0.1-0.5Pa, pre-sputtering 10-30min；
4) chip bench rotates 5-15 circles per minute, the baffle plate between chip bench and sputtering target platform is opened, by being sputtered in base
The cushion that thickness is 1-5nm is formed on piece；Cushion can be metal (such as Ta, Pd, Pt) or oxide dielectric material
(such as SiO2、MgO、Al2O3、Ta2O5Deng)；
5) combined tessera target described in magnetron sputtering or ternary GdFeCo alloys targets, sputtering power density are 4-5W/
cm2, by adjusting sputtering time in the GdFeCo alloy firms that growth thickness scope 5-50nm is sputtered on cushion, wherein described
The Gd elements mass fraction of GdFeCo alloy firms is 25-26.5%；
7) sputtering 1-3nm protective layer covering GdFeCo alloy firms；Protective layer is oxidation-resistant metallic material, it is optional such as
Ta, Cu, Ru, Pt, Pd etc..
Above-described embodiment is only used for further illustrating that a kind of vertical adjustable nano thickness GdFeCo of magnetic characteristic of the present invention is closed
The preparation method of gold thin film, but the invention is not limited in embodiment, every technical spirit according to the present invention is implemented to more than
Any simple modification, equivalent variations and modification that example is made, each fall within the protection domain of technical solution of the present invention.
Claims (6)
1. a kind of preparation method of the adjustable nano thickness GdFeCo alloy firms of vertical magnetic characteristic, it is characterised in that including following step
Suddenly：
1) the combined tessera target or ternary GdFeCo alloys targets constituted high-purity rare-earth Gd paster and iron cobalt FeCo alloy target
It is put into the target position of magnetic control co-sputtering room；
2) the substrate placement after cleaning, drying is fixed on the chip bench of vacuum sputtering room, regulation target-substrate distance is 3-8cm；
3) it is evacuated to sputtering vacuum chamber and reaches vacuum 1 × 10-5Below Pa, logical high purity argon is used as working gas, argon gas
Flow is 40-80sccm, and sputtering operating air pressure is set as 0.1-0.5Pa, pre-sputtering 10-30min；
4) chip bench rotates 5-15 circles per minute, the baffle plate between chip bench and sputtering target platform is opened, by being sputtered on substrate
The cushion that thickness is 1-5nm is formed, the cushion is metal or oxide dielectric material；
5) combined tessera target described in magnetron sputtering or ternary GdFeCo alloys targets, sputtering power density are 4-5W/cm2, pass through
Sputtering time is adjusted in the GdFeCo alloy firms that growth thickness scope 5-50nm is sputtered on cushion, wherein the GdFeCo is closed
The Gd elements mass fraction of gold thin film is 25-26.5%；
6) sputtering 1-3nm protective layer covering GdFeCo alloy firms.
2. preparation method according to claim 1, it is characterised in that：The cushion is Ta, Pd, Pt, SiO2、MgO、
Al2O3Or Ta2O5。
3. preparation method according to claim 1, it is characterised in that：The protective layer is oxidation-resistant metallic material.
4. preparation method according to claim 3, it is characterised in that：The protective layer is Ta, Cu, Ru, Pt or Pd.
5. preparation method according to claim 1, it is characterised in that：The combined tessera target is by some high-purities
Gd pasters are uniformly placed on the FeCo alloy target, and the high-purity Gd pasters are isosceles triangle and summit is closed with the FeCo
The center of circle of gold target is overlapped.
6. preparation method according to claim 5, it is characterised in that：The drift angle of the high-purity Gd pasters is 20-40 degree,
The 70-90% of a length of FeCo alloy target radius length of waist.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110021481A (en) * | 2019-04-23 | 2019-07-16 | 东华理工大学 | A method of preparing artificial-anti-ferromagnet's composite material |
| CN110016649A (en) * | 2019-05-14 | 2019-07-16 | 东华理工大学 | A kind of coercitive method of rare earth-transition alloy firm adjusting the ion containing Gd |
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|---|---|---|---|---|
| CN1979210A (en) * | 2005-12-09 | 2007-06-13 | 中国科学院物理研究所 | 3-D magnetic-field sensor integrated by planes, preparing method and use |
| CN103531707A (en) * | 2012-07-03 | 2014-01-22 | 中国科学院物理研究所 | Magnetic tunnel junction |
| CN106521439A (en) * | 2016-11-10 | 2017-03-22 | 华侨大学 | Preparation method of coercivity-adjustable rare earth-transition alloy film |
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2017
- 2017-06-09 CN CN201710432024.8A patent/CN107275073A/en active Pending
Patent Citations (3)
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|---|---|---|---|---|
| CN1979210A (en) * | 2005-12-09 | 2007-06-13 | 中国科学院物理研究所 | 3-D magnetic-field sensor integrated by planes, preparing method and use |
| CN103531707A (en) * | 2012-07-03 | 2014-01-22 | 中国科学院物理研究所 | Magnetic tunnel junction |
| CN106521439A (en) * | 2016-11-10 | 2017-03-22 | 华侨大学 | Preparation method of coercivity-adjustable rare earth-transition alloy film |
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| 安玉蓉: ""稀土Gd掺杂FeCo薄膜的结构和磁性"", 《中国优秀硕士学位论文全文数据库•工程科技Ⅰ辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110021481A (en) * | 2019-04-23 | 2019-07-16 | 东华理工大学 | A method of preparing artificial-anti-ferromagnet's composite material |
| CN110016649A (en) * | 2019-05-14 | 2019-07-16 | 东华理工大学 | A kind of coercitive method of rare earth-transition alloy firm adjusting the ion containing Gd |
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