CN107190242A - A kind of preparation method with a wide range of adjustable coercivity nano thickness rare-earth transition alloy firm - Google Patents

A kind of preparation method with a wide range of adjustable coercivity nano thickness rare-earth transition alloy firm Download PDF

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CN107190242A
CN107190242A CN201710334494.0A CN201710334494A CN107190242A CN 107190242 A CN107190242 A CN 107190242A CN 201710334494 A CN201710334494 A CN 201710334494A CN 107190242 A CN107190242 A CN 107190242A
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rare earth
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王可
董硕
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Huaqiao University
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
    • G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
    • G11B5/706—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material
    • G11B5/70605—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material metals or alloys
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
    • G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
    • G11B5/706—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material
    • G11B5/70605—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material metals or alloys
    • G11B5/70615—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material metals or alloys containing Fe metal or alloys
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
    • G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
    • G11B5/706—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material
    • G11B5/70605—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material metals or alloys
    • G11B5/70621—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material metals or alloys containing Co metal or alloys

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Abstract

The present invention discloses a kind of preparation method with a wide range of adjustable coercivity nano thickness rare-earth transition alloy firm, rare earth paster and ferrocobalt target are fitted to form combined tessera target, using the method for magnetron sputtering combined tessera target or ternary alloy three-partalloy target, change the thickness of growing film by simply controlling sputtering time, realize the consecutive variations of film characteristics, effectively the magnetic characteristic of rare-earth transition alloy firm prepared by regulation, realizes coercitive a wide range of consecutive variations.The preparation method of the rare-earth transition alloy firm is simple, and strong operability is reproducible, with low cost, can meet the material needs in different technologies field in the interior magnetic characteristic and coercivity for adjusting film in a big way.

Description

It is a kind of that there is a wide range of adjustable coercivity nano thickness rare earth-transition alloy firm Preparation method
Technical field
The present invention relates to magnetic spin electronics and Magnetographic Technology Material Field, and in particular to be a kind of to be used for magnetic spin The preparation method with a wide range of adjustable coercivity nano thickness rare earth-transition alloy firm of electronic device.
Background technology
Conventional vertical magnetic recording material and laser assisted magnetic recording media amorphous rare earth-transition alloy film material are due to tool There is big perpendicular magnetic anisotropic and high heat endurance and the extensive concern for being constantly subjected to people.This alloy firm Coupled in anti-parallel arrangement is presented in the magnetic moment of material rare earth elements (Tb or Dy) and transition element (FeCo) sublattice, causes A specific compensation point composition is there is likely to be in this kind of material, corresponding to the magnetization of this compensation point composition alloy film Intensity is zero but coercivity is infinitely great.The rare earth-transition alloy firm composition of film surface vertical for direction of easy axis is general Near compensation point composition.The magnetic moment of alloy film material rare earth elements sublattice is more than transition element crystalline substance during room temperature On the contrary then alloy firm composition is rich rare earth to the magnetic moment of lattice, then be richness transition.
Currently, with the fast development of this emerging field of magnetic spin electronics, with big perpendicular magnetic anisotropic and height The rare earth (Tb, Dy) of heat endurance-transition group (FeCo) alloy film material is in high density, the magnetic random memory part of low-power consumption And obtain new application in terms of electric current driving domain wall motion.Magnetic random memory part requires the rare earth-transition race alloy firm With different perpendicular coercive forces, to meet the requirement of difference in functionality layer.Therefore find and can be applicable to typical case spy on magnetoelectronic devices Levy thickness for 3~35nm while having the preparation side of the rare earth-transition race alloy firm of a wide range of tunable characteristic of perpendicular coercive force Method, has weight in novel information memory areas such as the direct induced magnetization upsets of current magnetic spin electronics device particularly electric current Meaning is wanted, and is possible to produce huge economic benefits.
The coercivity size of rare earth-transition alloy firm is directly related with the composition of film middle rare earth and transition elements.It is logical The composition for changing film middle rare earth and transition elements is crossed than different coercivitys can be realized.In practical application, such rare earth-mistake Cross what alloy firm was prepared generally by direct current or the method for radio-frequency sputtering, thin film composition can be on change combined tessera target Patch location and ratio or changed using the ternary alloy three-partalloy target of heterogeneity ratio.But, above method is required for brokenly Bad vacuum changes target, operation inconvenience, long preparation period, moreover, using different proportion composition ternary alloy three-partalloy target it is expensive.
The content of the invention
There is a wide range of adjustable coercivity nano thickness rare earth-transition alloy firm it is an object of the invention to provide one kind Preparation method, with low cost, short preparation period.The preparation method can be in the case where not destroying vacuum, by simply Control sputtering time to change the thickness of growing film, the consecutive variations of film characteristics are realized in control, and expansion prepares rectifying for film Stupid power scope, suitable coercitive rare earth-transition alloy firm easy to find and and exploration optimum performance thickness.
In order to reach above-mentioned purpose, solution of the invention is：
A kind of preparation method with a wide range of adjustable coercivity nano thickness rare earth-transition alloy firm, including it is following Step：
(1) the combined tessera target or ternary alloy three-partalloy target constituted rare earth paster and ferrocobalt target is used as magnetron sputtering Target, is fixed on the sputtering target stand of magnetron sputtering chamber, and the rare earth paster is Tb pasters or Dy pasters, the rare earth The drift angle of paster is 15~40 °, and the ternary alloy three-partalloy target is TbFeCo alloy target or DyFeCo alloys targets, the combined tessera The quantity of target middle rare earth paster is that the content of rare earth in 3~6, the ternary alloy three-partalloy target is 23~28%；
(2) by after cleaning, drying substrate placement be fixed on the chip bench of magnetron sputtering chamber, adjustment target-substrate distance be 4~ 8cm；
(3) sputtering vacuum chamber is reached into vacuum 1 × 10-5Below Pa, the argon gas for being passed through purity >=99.99% is made For working gas, the charge flow rate of argon gas is controlled in the range of 30~100sccm；
(5) under conditions of sputtering 0.2~1.0Pa of operating air pressure, to 10~30min of the target pre-sputtering；
(6) regulation chip bench rotation 5~15 per minute is enclosed, and opens the baffle plate between chip bench and sputtering target stand, with 1.5~ 6W/cm2Sputtering power density sputter the target, sputter rate is 0.1~0.3nm/s, control sputtering time 15~ 150s, obtains the thick rare earth-transition alloy firms of 3~35nm.
In step (1), the rare earth paster is the rare earth paster of purity >=99.9% in isosceles triangle, the iron cobalt Purity >=99.9% of alloys target, each rare earth paster point centered on the center of circle of the ferrocobalt target is attached to the iron On cobalt alloy target, the combined tessera target of sputtering is formed.
In step (1), the quantity of the rare earth paster is 3~6, so as to ensure the rare earth-transition alloy prepared Rare earth elements in film are between 23~28%.
In step (5), before target described in pre-sputtering, first splash-proofing sputtering metal cushion or oxide are slow on the substrate Layer is rushed, the metal buffer layer is Ta cushions, Pd cushions or Pt cushions, and the oxide buffer layer is SiO2Buffering Layer, MgO cushions or Al2O3Cushion.
In step (6), protective layer is sputtered on the obtained rare earth-transition alloy firm, to prevent oxidation, the guarantor Sheath is Ta protective layers, Pd protective layers or Pt protective layers.
After adopting the above technical scheme, the present invention is a kind of there is a wide range of adjustable coercivity nano thickness rare earth-transition to close The preparation method of gold thin film, has the advantage that：Change the film thickness of growth by simply controlling sputtering time, realization is received The consecutive variations of meter Hou Du rare earth-transition alloy firm magnetic characteristics, obtain hanging down with the big excursions more than 2 orders of magnitude Straight coercivity.Need not change combined tessera target rare earth elements paster quantity and position or using different proportion into The ternary alloy three-partalloy target divided, in the case where not destroying vacuum change target, the film thickness scope 3 applied in typical device~ In 35nm, it is possible to achieve the consecutive variations of film magnetic characteristic, the coercivity of convenient adjustment alloy firm.The preparation method can be used for Prepare coercivity adjustable nano thickness rare earth-transition alloy firm and exploration optimum performance thickness in wide range.The system Preparation Method is simple, and strong operability is reproducible, with low cost, can disposably be prepared with not in the case where not destroying vacuum With the series thin film sample of magnetic characteristic, the requirement of different magnetoelectronic devices and recording technique field functional layer material is met.
Brief description of the drawings
Fig. 1 is a) typical commercial band 300nm thermal oxides SiO2The abnormality of the TbFeCo films grown on layer single crystalline Si substrate Hall Curve, b) coercivity and film thickness change curve；
Fig. 2 is the unusual Hall Curve that a) typical case has the TbFeCo films grown on MgO cushion single crystalline Si substrates, b) Coercivity and film thickness change curve；
Fig. 3 is unusual Hall Curve of the typical case with the TbFeCo films grown on Ta cushion single crystalline Si substrates, b) is rectified Stupid power and film thickness change curve.
Embodiment
In order to which technical scheme is explained further, the present invention is explained in detail below by specific embodiment State.
Embodiment one
First, the preparation of thin-film material
A kind of preparation method with a wide range of adjustable coercivity nano thickness rare earth-transition alloy firm, including it is following Step：
(1) it is 1 inch four Tb pasters in the high-purity (purity is 99.95%) of isosceles triangle to be attached into radius On the ferrocobalt target of high-purity (purity is 99.9%), the combined tessera target of sputtering is formed, each Tb paster is closed with iron cobalt Point is distributed on ferrocobalt target centered on the center of circle of gold target, and the drift angle of Tb pasters is 28 °, a length of 2cm of waist of Tb pasters, thickness For 2mm；
(2) combined tessera target is fixed on the sputtering target stand of magnetron sputtering chamber as the target of magnetron sputtering；
(3) with typical commercial band 300nm thermal oxides SiO2Layer single crystalline Si is substrate, to substrate successively with acetone, alcohol, different Propyl alcohol is dried after being cleaned by ultrasonic, and the substrate placement after drying and processing is fixed on the chip bench of magnetron sputtering chamber, target base is adjusted Away from for 6.5cm；
(4) sputtering vacuum chamber is reached that vacuum is 1 × 10-5Pa, being passed through the argon gas of high-purity, (purity is 99.999%) as working gas, the charge flow rate of argon gas is controlled in 60sccm；
(5) degree that adjustment slide valve is closed, stablizes sputtering operating air pressure and maintains 0.6Pa, to combined tessera target Pre-sputtering 20min；
(6) regulation chip bench rotation 10 per minute is enclosed, and the baffle plate between chip bench and sputtering target stand is opened, with 5.18W/ cm2Sputtering power density sputtering combined tessera target, sputter rate is 0.233nm/s, and sputtering time is 15~150s, has been sputtered Cooled down after finishing, that is, obtain the TbFeCo alloy film of 3.5~35nm thickness grown on substrate, the TbFeCo alloy prepared is thin Rare earth elements in film are~26%.
2nd, performance test
The magnetic characteristic of the TbFeCo alloy film is characterized as shown in figure 1, sputtering prepares TbFeCo conjunctions under different sputtering times The unusual Hall Curve of gold thin film shows that the magnetic characteristic occurred level of the TbFeCo alloy film in 3.5~35nm thickness ranges is arrived The vertical and rich consecutive variations for being transitioned into rich rare earth.
Thin film coercitive force shows with film thickness change curve：The TbFeCo alloy film has maximum coercitive thickness position Between 14~21nm.
Embodiment two
First, the preparation of thin-film material
A kind of preparation method with a wide range of adjustable coercivity nano thickness rare earth-transition alloy firm, including it is following Step：
(1) it is 1 inch four Tb pasters in the high-purity (purity is 99.95%) of isosceles triangle to be attached into radius On the ferrocobalt target of high-purity (purity is 99.9%), the combined tessera target of sputtering is formed, each Tb paster is closed with iron cobalt Point is distributed on ferrocobalt target centered on the center of circle of gold target, and the drift angle of Tb pasters is 28 °, a length of 2cm of waist of Tb pasters, thickness For 2mm；
(2) combined tessera target is fixed on the sputtering target stand of magnetron sputtering chamber as the target of magnetron sputtering；
(3) dried after being cleaned by ultrasonic successively with acetone, alcohol, isopropanol to single crystalline Si substrate, by the Si after drying and processing Substrate placement is fixed on the chip bench of magnetron sputtering chamber, and adjustment target-substrate distance is 6.5cm；
(4) sputtering vacuum chamber is reached that vacuum is 1 × 10-5Pa, being passed through the argon gas of high-purity, (purity is 99.999%) as working gas, the charge flow rate of argon gas is controlled in 60sccm；
(5) degree that adjustment slide valve is closed, stablizes sputtering operating air pressure and maintains 0.6Pa, first to single crystalline Si base Piece radio-frequency sputtering 1nm MgO cushions, are obtained with MgO cushion single crystalline Si substrates, then to combined tessera target pre-sputtering 20min；
(6) regulation chip bench rotation 10 per minute is enclosed, and opens the baffle plate between chip bench and sputtering target stand, then with 5.18W/ cm2Sputtering power density sputtering combined tessera target, sputter rate is 0.233nm/s, and sputtering time is 15~150s, has been sputtered Cooled down after finishing, that is, obtain the TbFeCo alloy film of 3.5~35nm thickness grown on substrate, the TbFeCo alloy prepared is thin Rare earth elements in film are~26%.
2nd, performance test
The magnetic characteristic of the TbFeCo alloy film is characterized as shown in Fig. 2 sputtering prepares TbFeCo conjunctions under different sputtering times The unusual Hall Curve of gold thin film shows that the magnetic characteristic occurred level of the TbFeCo alloy film in 3.5~35nm thickness ranges is arrived The vertical and rich consecutive variations for being transitioned into rich rare earth.
Thin film coercitive force shows with film thickness change curve：The TbFeCo alloy film has maximum coercitive thickness position Between 14~21nm.
Embodiment three
First, the preparation of thin-film material
A kind of preparation method with a wide range of adjustable coercivity nano thickness rare earth-transition alloy firm, including it is following Step：
(1) it is 1 inch four Tb pasters in the high-purity (purity is 99.95%) of isosceles triangle to be attached into radius On the ferrocobalt target of high-purity (purity is 99.9%), the combined tessera target of sputtering is formed, each Tb paster is closed with iron cobalt Point is distributed on ferrocobalt target centered on the center of circle of gold target, and the drift angle of Tb pasters is 28 °, a length of 2cm of waist of Tb pasters, thickness For 2mm；
(2) combined tessera target is fixed on the sputtering target stand of magnetron sputtering chamber as the target of magnetron sputtering；
(3) dried after being cleaned by ultrasonic successively with acetone, alcohol, isopropanol to single crystalline Si substrate, by the Si after drying and processing Substrate placement is fixed on the chip bench of magnetron sputtering chamber, and adjustment target-substrate distance is 6.5cm；
(4) sputtering vacuum chamber is reached that vacuum is 1 × 10-5Pa, being passed through the argon gas of high-purity, (purity is 99.999%) as working gas, the charge flow rate of argon gas is controlled in 60sccm；
(5) degree that adjustment slide valve is closed, stablizes sputtering operating air pressure and maintains 0.6Pa, first to single crystalline Si base Piece d.c. sputtering 2nm Ta cushions, are obtained with Ta cushion single crystalline Si substrates, then to combined tessera target pre-sputtering 20min；
(6) regulation chip bench rotation 10 per minute is enclosed, and opens the baffle plate between chip bench and sputtering target stand, then with 5.18W/ cm2Sputtering power density sputtering combined tessera target, sputter rate is 0.233nm/s, and sputtering time is 15~150s, has been sputtered Cooled down after finishing, that is, obtain the TbFeCo alloy film of 3.5~35nm thickness grown on substrate, the TbFeCo alloy prepared is thin Rare earth elements in film are~26%.
2nd, performance test
The magnetic characteristic of the TbFeCo alloy film is characterized as shown in figure 3, sputtering prepares TbFeCo conjunctions under different sputtering times The unusual Hall Curve of gold thin film shows that the magnetic characteristic occurred level of the TbFeCo alloy film in 3.5~35nm thickness ranges is arrived The vertical and rich consecutive variations for being transitioned into rich rare earth.
Thin film coercitive force shows with film thickness change curve：The TbFeCo alloy film has maximum coercitive thickness position Between 14~21nm.
Rare earth paster, ferrocobalt target and single crystalline Si substrate in the various embodiments described above are commercially commercially available, It need to only be bought according to purity requirement.
Above-described embodiment and schema and non-limiting product form of the invention and style, any art it is common Appropriate change or modification that technical staff is done to it, all should be regarded as not departing from the patent category of the present invention.

Claims (4)

1. a kind of preparation method with a wide range of adjustable coercivity nano thickness rare earth-transition alloy firm, it is characterised in that： Comprise the following steps：
(1) target of the combined tessera target or ternary alloy three-partalloy target constituted rare earth paster and ferrocobalt target as magnetron sputtering Material, is fixed on the sputtering target stand of magnetron sputtering chamber, and the rare earth paster is Tb pasters or Dy pasters, the rare earth patch The drift angle of piece is 15~40 °, and the ternary alloy three-partalloy target is TbFeCo alloy target or DyFeCo alloys targets, the combined tessera target The quantity of middle rare earth paster is that the content of rare earth in 3~6, the ternary alloy three-partalloy target is 23~28%；
(2) the substrate placement after cleaning, drying is fixed on the chip bench of magnetron sputtering chamber, adjustment target-substrate distance is 4~8cm；
(3) sputtering vacuum chamber is reached into vacuum 1 × 10-5Below Pa, is passed through the argon gas of purity >=99.99% as work Make gas, control the charge flow rate of argon gas in the range of 30~100sccm；
(5) under conditions of sputtering 0.2~1.0Pa of operating air pressure, to 10~30min of the target pre-sputtering；
(6) regulation chip bench rotation 5~15 per minute is enclosed, and the baffle plate between chip bench and sputtering target stand is opened, with 1.5~6W/ cm2Sputtering power density sputter the target, sputter rate is 0.1~0.3nm/s, control sputtering time in 15~150s, Obtain the thick rare earth-transition alloy firms of 3~35nm.
A kind of there is a wide range of adjustable coercivity nano thickness rare earth-transition alloy firm 2. according to claim 1 Preparation method, it is characterised in that：In step (1), the rare earth paster is the rare earth of purity >=99.9% in isosceles triangle Paster, purity >=99.9% of the ferrocobalt target, each rare earth paster is using the center of circle of the ferrocobalt target in Heart point is attached on the ferrocobalt target, forms the combined tessera target of sputtering.
A kind of there is a wide range of adjustable coercivity nano thickness rare earth-transition alloy firm 3. according to claim 1 Preparation method, it is characterised in that：In step (5), before target described in pre-sputtering, first splash-proofing sputtering metal cushion on the substrate Or oxide buffer layer, the metal buffer layer is Ta cushions, Pd cushions or Pt cushions, the oxide buffer Layer is SiO2Cushion, MgO cushions or Al2O3Cushion.
A kind of there is a wide range of adjustable coercivity nano thickness rare earth-transition alloy firm 4. according to claim 1 Preparation method, it is characterised in that：In step (6), anti-oxidation protection is sputtered on the obtained rare earth-transition alloy firm Layer, the protective layer is Ta protective layers, Pd protective layers or Pt protective layers.
CN201710334494.0A 2017-05-12 2017-05-12 A kind of preparation method with a wide range of adjustable coercivity nano thickness rare-earth transition alloy firm Pending CN107190242A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110016649A (en) * 2019-05-14 2019-07-16 东华理工大学 A kind of coercitive method of rare earth-transition alloy firm adjusting the ion containing Gd

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Application publication date: 20170922