CN109754985A - A method of improving permalloy film anisotropic magnetoresistive - Google Patents
A method of improving permalloy film anisotropic magnetoresistive Download PDFInfo
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Abstract
A method of permalloy film anisotropic magnetoresistive is improved, magnetic thin film technology field is belonged to.The present invention sequentially forms the multi-layer film structure of buffer layer, permalloy film and protective layer on substrate; the metal Nb film for wherein selecting metal Ta film and being arranged on metal Ta film is formed by double membrane structure as buffer layer to replace conventional metals Ta monofilm buffer layer; in contrast; Ta/Nb buffer layer can also preferably induce permalloy film to form the growth of specific (111) crystal orientation at normal temperature, hence it is evident that improve the AMR value of permalloy；Meanwhile Ta/Nb buffer layer compares TaNb alloy buffer layer, is also beneficial to reduce film internal stress while improving AMR value, generates finer and close film, obtains more preferably magnetic property and thermal stability；And Ta/Nb buffer layer has price advantage compared to Ta monofilm buffer layer, can reduce production cost.The raising that the present invention applies to Magnetic Sensor device performance had into huge potential value.
Description
Technical field
The invention belongs to magnetic thin film technology fields, and in particular to a kind of to improve permalloy film anisotropic magnetoresistive
Method.
Background technique
In curie point hereinafter, the resistivity of ferromagnetic material changes as itself intensity of magnetization and current direction angle change
The phenomenon that, referred to as anisotropic magneto-resistive effect (Anisotropic Magnetoresistance, AMR).Amr effect is 1857
Year is found by William Thomson, initially enters transducer market to last century the seventies later.Anisotropic magnetoresistive passes
The magnetic signal received is converted into usable output signal for principle based on amr effect by sensor, always all as detection 10-5Oe is extremely
One of the key method in several magnetic fields Oe.Anisotropic magnetoresistive sensor relies on its low in energy consumption, high sensitivity, small in size, noise
The advantages that small, high reliablity and strong adverse environment resistant ability, is widely used in each face of each side.To anisotropic magnetoresistive sensor
Performance optimization essentially consist in by improving magnetic field sensitivity and realizing in terms of reducing signal-to-noise ratio two.And it improves AMR and subtracts
Small saturation magnetic field and demagnetizing field can effectively improve magnetic field sensitivity.Currently, to anisotropic magnetoresistive sensor material, device junction
The research of structure, peripheral circuit etc. comparative maturity, so that anisotropic magnetoresistive sensor develops into miniaturization, high-precision
Spend the first choice of Magnetic Sensor.Cheap, amr effect is more considerable, coercivity is low, sensitivity because having for permalloy film
The high advantages such as low with saturation magnetic field, especially since permalloy film also has unique angle sensitivity feature, in earth magnetism
It is with a wide range of applications in navigation, guided missile positioning, automobile-used compass and unmanned plane orientation, the positioning system of posture.So slope
Alloy (NiFe) thin-film material is not one of the material of current most widely used anisotropic magneto-resistive effect sensor.
In AMR membrane-film preparation process, needs to make thin film between substrate and permalloy film, that is, buffer
Layer.Buffer layer anisotropic magnetoresistive thin for permalloy plays an important role, and influences the life of permalloy film atom
It is long, that is, influence the quality of forming film of film.According to crystal growth theories, film atom easily can the smallest direction life along surface
Long, solid matter face has the smallest surface energy, and the permalloy film of the film morphology grown on substrate is face cubic structure,
Its solid matter face is (111) face, then film is easier to grow along (111) face.Metal Ta is that permalloy film is the most frequently used at this stage
Buffer layer and protective layer, this is because bottom can obviously improve the crystallinity and induction of permalloy using Ta as buffer layer
(111) texture；And Ta film surface be easy passivation, so on permalloy cover Ta layers can protective film it is not oxidized, together
When have low-resistivity so that Ta layers of shunt effect are unobvious.It can be seen that buffer layer and protective layer are most important for permalloy.
In practical applications, in order to reduce the demagnetization field-effect of permalloy film, need to be deposited is thin as far as possible.But
Being the problem of thus bringing is, with the reduction of permalloy film thickness, the magneto-resistor of permalloy film therewith sharply under
Drop.Also, it will appear magnetic dead layer in the contact interface of Ta and permalloy, this is because the interface of Ta film and NiFe film occurs
React (2Ta+Ni=NiTa2), between buffer layer Ta and permalloy and permalloy and protection interlayer generate " dead layer ",
The effective thickness and magnetic moment for leading to permalloy film are reduced, therefore unfavorable shadow can be generated to the magnetic property of permalloy film
It rings.After the high temperature anneal, due to interface atoms diffusion so that " dead layer " thickness further increases, reduce perm
Phenomenon is mutually mixed between alloy firm median surface, make magnetic property it is more stable be current AMR research a content.
Summary of the invention
For permalloy film in the prior art and buffer layer and protection interface layer diffusion cause its effective thickness and
Magnetic moment reduces the problem of influencing magnetic property, provides a kind of method for improving permalloy film anisotropic magnetoresistive.
In order to solve the above-mentioned technical problem, the present invention adopts the following technical scheme:
A method of permalloy film anisotropic magnetoresistive is improved, buffer layer is sequentially formed on substrate, perm closes
The multi-layer film structure of gold thin film and protective layer, which is characterized in that the buffer layer is metal Ta film and is arranged on metal Ta film
Metal Nb film be formed by double membrane structure.
Further, the protective layer is metal Ta film.
Further, the buffer layer, permalloy film and protective layer use magnetron sputtering method, carry out after the completion of sputtering
Vacuum annealing process.
Further, background vacuum is 1.0 × 10 before sputtering-4Pa is hereinafter, the high-purity argon that sputtering atmosphere is 99.99%
Gas, sputtering pressure are 0.2Pa~0.5Pa.
Further, it is individually sputtered when forming buffer layer using metal Ta and metal Nb, target used in target rifle is respectively Ta
Target and Nb target, the first deposited metal Ta film on substrate, then the deposited metal Nb film on metal Ta film again.
Further, the sputtering power of metal Ta is 90W~130W, and the sputtering power of metal Nb is 50W~80W；Make
For preferred embodiment, the sputtering power of metal Ta is 100W, and the sputtering power of metal Nb is 80W.
Further, alloy NiFe target is used when forming NiFe thin magnetic film, so that the ingredient of NiFe thin magnetic film is made
The mass fraction that mass fraction for Ni is 81%, Fe is 19%, and film impurities content is less than 0.1%.
Further, apply magnetic field, specially 150~300Oe along film easy axis when annealing.
Further, the vacuum degree of vacuum annealing process is 1.0 × 10-4Pa, annealing temperature are 300~400 DEG C, when annealing
Between be 180~240 minutes.
Further, thickness is controlled by adjusting sputtering time when forming buffer layer, permalloy film and protective layer
Degree, it is preferred that, buffer layer with a thickness of 2nm~5nm, metal Nb film with a thickness of 1nm~3nm, the thickness of metal Ta film
Degree is 1nm~4nm, NiFe thin magnetic film with a thickness of 10nm~30nm, protective layer with a thickness of 1nm~5nm.
Compared with prior art, the beneficial effects of the present invention are:
It can be seen that according to embodiment, the present invention replaces conventional metals Ta using metal Ta and metal Nb duplicature (Ta/Nb)
Monofilm is as buffer layer, and in contrast, Ta/Nb buffer layer preferably can also induce permalloy film to form spy at normal temperature
The growth of fixed (111) crystal orientation, hence it is evident that improve the AMR value of permalloy, and in Ta/Nb buffer layer metal Ta film thickness
For 3nm, metal Nb film with a thickness of 2nm when, have on the whole using the multi-layer film structure of permalloy as AMR core function layer
Optimal AMR performance；Meanwhile Ta/Nb buffer layer compares TaNb alloy buffer layer, is also beneficial to reduce while improving AMR value
Film internal stress generates finer and close film, and thermal stability is more excellent, therefore, can be significantly improved using Ta/Nb buffer layer
The magnetoresistive ratio of permalloy film obtains more preferably magnetic property, is applied to the raising of Magnetic Sensor device performance
With huge potential value.In addition, mentioning high performance basis since metal Nb is lower compared to the cost of metal Ta
On, moreover it is possible to it is effectively reduced production cost.
Detailed description of the invention
(a), (b) curve are using metal Ta (5nm), Ta (3nm)/Nb (2nm) duplicature as buffer layer respectively in Fig. 1
The amr effect test curve of multilayer membrane sample.
(a) in Fig. 2, (b) curve are using metal Ta (3nm)/Nb (2nm) duplicature, TaNb alloy (5nm) as slow respectively
Rush the amr effect test curve of the multilayer membrane sample of layer.
(a), (b) curve are using metal Ta (1nm+Xnm), Ta (Xnm)/Nb (1nm) duplicature as buffering respectively in Fig. 3
Layer multilayer membrane sample with buffer layer thickness t (t=1+X) AMR performance change curve.
(a), (b) curve are using metal Ta (2nm+Xnm), Ta (Xnm)/Nb (2nm) duplicature as buffering respectively in Fig. 4
Layer multilayer membrane sample with buffer layer thickness t (t=2+X) AMR performance change curve.
(a), (b) curve are using metal Ta (3+Xnm), Ta (Xnm)/Nb (3nm) duplicature as buffer layer respectively in Fig. 5
Multilayer membrane sample with buffer layer thickness t (t=3+X) AMR performance change curve.
(a) in Fig. 6, (b) curve are the multilayer film sample using metal Ta (Xnm)/Nb (Ynm) duplicature as buffer layer respectively
Product with buffer layer metal thickness t (t=X+Y) AMR performance change curve.
Specific embodiment
In order to enable one of ordinary skill in the art can more understand the present invention program and principle, with reference to the accompanying drawing and have
Body embodiment is described in detail.The contents of the present invention are not limited to any specific embodiment, and also not representing is most preferred embodiment,
General substitution well-known to those skilled in the art is also encompassed within the scope of the invention.
The gist of the invention is to provide a kind of method for improving permalloy film anisotropic magnetoresistive, on substrate according to
The secondary multi-layer film structure for forming buffer layer, permalloy film and protective layer, wherein the protective layer is metal Ta film, described
Buffer layer is that metal Ta film and the metal Nb film being arranged on metal Ta film are formed by double membrane structure.
Embodiment:
Buffer layer, NiFe magnetic are successively formed on the substrate using silicon chip as substrate, using magnetron sputtering method for the present embodiment
Property film and protection layer stackup multi-layer film structure, the material of the buffer layer is Ta and Nb；It is applied in the direction for being parallel to substrate
Add the magnetic field of 100Oe；Before being sputtered, the background vacuum of magnetron sputtering apparatus is 8 × 10-5Pa, sputtering atmosphere are
99.999% high-purity argon gas, sputtering pressure are 0.2Pa；In the present embodiment, it is sequentially depositing Ta and Nb duplicature on it as slow
Layer is rushed, then sputters permalloy layer, i.e. NiFe thin magnetic film again, sputters protective layer Ta film on permalloy layer finally to keep away
Exempt to be aoxidized and destroyed by the external world as the NiFe magnetoresistive film of core function layer；The wherein sputtering of NiFe thin magnetic film and protective layer
Technique is all with the prior art almost without the similarities and differences, and in buffer layer making step, Ta and Nb film all uses RF radio-frequency power supply to carry out
Sputtering, the present embodiment study influence under different-thickness to the AMR performance of multilayer membrane sample of Ta, Nb, and wherein metal Ta splashes
Penetrating power is 100W, and metal Nb sputtering power is 80W, obtains the metal Ta and metal of different-thickness by controlling sputtering time
Nb；Multilayer membrane sample is taken out from coating chamber after the completion of to be sputtered, is put into vacuum annealing furnace and anneals, base vacuum is
5.0×10-4Pa, annealing temperature are 350 DEG C, and annealing time is 180 minutes, need when annealing to apply in the easy axis of film
Add the magnetic field of 100Oe, finally obtained Ta/Nb/NiFe/Ta multilayer membrane sample.
In order to test the magnetic property of the obtained multilayer membrane sample of the present invention, the present embodiment measures Ta/Nb/ using four probe method
NiFe (24nm)/Ta (2nm) multilayer membrane sample anisotropic magnetoresistive and resistivity.Fig. 1 is shown using Ta of the present invention
(3nm)/Nb (2nm) buffer layer and the amr effect comparison song that multilayer membrane sample is made using conventional metals Ta (5nm) buffer layer
Line.From Fig. 1, it was found that, the resistance change rate using Ta/Nb double layer of metal film as the sample of buffer layer is higher than using biography
Resistance change rate of the system metal Ta as the film sample of buffer layer.
Fig. 2 show using Ta of the present invention (3nm)/Nb (2nm) duplicature buffer layer and uses TaNb (5nm) alloy buffered
The amr effect correlation curve of the obtained multilayer membrane sample of layer.It was found that, it is used as and is buffered using Ta/Nb double layer of metal film from Fig. 2
The resistance change rate of the sample of layer, which is higher than, uses resistance change rate of the TaNb alloy as the film sample of buffer layer.It can be with by figure
Find out, Ta (3nm)/Nb (2nm) duplicature is that the AMR value of film AMR value ratio TaNb alloy (5nm) buffer layer of buffer layer improves
About 9%.Film internal stress can reduce using Ta/Ni double membrane structure compared to using TaNb alloy material, generate
Finer and close film, thermal stability are substantially better than compound film, can preferably improve magneto spheric structure, are the life of magnetoresistive film
It is long that good flatness is provided, it can also preferably induce NiFe film to form the growth of specific (111) crystal orientation at normal temperature, from
And improve the AMR characteristic of film.
Fig. 3,4,5 are respectively Ta/Nb double layer of metal film (Nb film thickness is 1nm, 2nm, 3nm) as the thin of buffer layer
The resistance change rate of membrane sample is higher than to be become as the film sample AMR performance of buffer layer with buffer layer thickness using conventional metals Ta
Change curve graph.It is seen that in a certain range, the AMR performance of the double-deck membrane sample increase with metal Ta thickness degree and
Increased changing rule, this is because the duplicature that Ta/Nb is formed can influence the particle in NiFe film as buffer layer
Diameter and distribution, according to scattering mechanism, big crystal grain reduces crystal boundary in film, to reduce the scattering to conduction electronics, leads
Causing the resistance of film reduces, and increases AMR value, but thickening with duplicature, since obstruction of its high resistivity to electric current is made
With enhancing, so that the AMR value of sample is gradually reduced.Therefore the AMR performance of film sample is with the thickness increase of Ta/Nb buffer layer
Presentation first increases the changing rule reduced afterwards.In addition, by comparison diagram 3 to 5 it is also seen that buffer layer metal Ta with a thickness of
3nm, metal Nb are with a thickness of AMR value when 2nm to reach to peak value.Compared with film of the metal Ta as buffer layer, in t=5nm,
About 32% is improved using Ta (3nm)/Nb (2nm) duplicature as the film AMR value ratio Ta buffer layer of buffer layer.
Fig. 6 is double with difference as the resistance change rate of the film sample of buffer layer using the Ta/Nb duplicature of different-thickness
The change curve of film structure (Nb, Ta thickness ratio) buffer layer.With the increase of buffer layer thickness t, the variation of resistance and AMR
Change corresponding, i.e., same raised changing rule after first reduction is presented.With the reduction of resistance, the magnetic domain of NiFe film is orientated
It reaches unanimity, stress in thin films and film defects are reduced, then coercivity also declines therewith.It can also be seen that, buffered from the figure
Layer metal Ta is with a thickness of 3nm, and metal Nb is with a thickness of AMR value when 2nm to reach to peak value.Compared with metal Ta is as the film of buffer layer
Compared with being improved about using Ta (3nm)/Nb (2nm) duplicature as the film AMR value ratio Ta buffer layer of buffer layer in t=5nm
32%.
In conclusion Ta/Nb duplicature is better than metal Ta in terms of improving NiFe multilayer film magnetic property as buffer layer
With TaNb alloy as buffer layer.
The embodiment of the present invention is elaborated in conjunction with attached drawing above, but the invention is not limited to above-mentioned
Specific embodiment, above-mentioned specific embodiment is only schematical, rather than restrictive, the ordinary skill people of this field
Member under the inspiration of the present invention, can also make many in the case where not departing from present inventive concept and claimed range
Deformation, these belong to protection of the invention.
Claims (9)
1. a kind of method for improving permalloy film anisotropic magnetoresistive, sequentially forms buffer layer, permalloy on substrate
The multi-layer film structure of film and protective layer, which is characterized in that the buffer layer is metal Ta film and is arranged on metal Ta film
Metal Nb film is formed by double membrane structure.
2. the method according to claim 1, wherein the buffer layer, permalloy film and protective layer use
Magnetron sputtering method carries out vacuum annealing process after the completion of sputtering.
3. according to the method described in claim 2, it is characterized in that, background vacuum is 1.0 × 10 before sputtering-4Pa is hereinafter, splash
The high-purity argon gas that atmosphere of emanating is 99.99%, sputtering pressure are 0.2Pa~0.5Pa.
4. according to the method described in claim 2, it is characterized in that, individually being splashed when forming buffer layer using metal Ta and metal Nb
It penetrates, target used in target rifle is respectively Ta target and Nb target, and first deposited metal Ta film, then deposits on metal Ta film again on substrate
Metal Nb film.
5. according to the method described in claim 4, it is characterized in that, the sputtering power of metal Ta be 90W~130W, metal Nb's
Sputtering power is 50W~80W；Preferably, the sputtering power of metal Ta is 100W, and the sputtering power of metal Nb is
80W。
6. according to the method described in claim 2, it is characterized in that, formed NiFe thin magnetic film when use alloy NiFe target, make
The mass fraction that the mass fraction that the ingredient that NiFe thin magnetic film must be made is Ni is 81%, Fe is 19%, and film impurities
Content is less than 0.1%.
7. according to the method described in claim 2, it is characterized in that, applying magnetic field, tool along film easy axis when annealing
Body is 150~300Oe.
8. according to the method described in claim 2, it is characterized in that, the vacuum degree of vacuum annealing process is 1.0 × 10-4Pa is moved back
Fiery temperature is 300~400 DEG C, and annealing time is 180~240 minutes.
9. according to the method described in claim 2, it is characterized in that, being formed equal when buffer layer, permalloy film and protective layer
Control thickness by adjusting sputtering time, buffer layer with a thickness of 2nm~5nm, metal Nb film with a thickness of 1nm~3nm, gold
Belong to Ta film with a thickness of 1nm~4nm, NiFe thin magnetic film with a thickness of 10nm~30nm, protective layer with a thickness of 1nm~5nm.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102810630A (en) * | 2011-05-30 | 2012-12-05 | 中国科学院物理研究所 | Anisotropy-modulatable magnetic thin-film structure, magneto-dependent sensor and preparation method of magneto-dependent sensor |
| CN104900800A (en) * | 2014-03-03 | 2015-09-09 | 北京嘉岳同乐极电子有限公司 | GMR magnetic nanometer multilayer film used for magneto-dependent sensor |
| CN105449096A (en) * | 2015-11-17 | 2016-03-30 | 四川大学 | Magnetic thin film structure, manufacturing and usage methods thereof, magnetic sensitive sensing unit and array |
| CN106207364A (en) * | 2015-04-29 | 2016-12-07 | 中国科学院物理研究所 | Spinning microwave oscillator based on hard magnetic material |
| CN109273254A (en) * | 2018-09-25 | 2019-01-25 | 电子科技大学 | A method of improving aeolotropic magneto resistor permalloy thin film magnetic property |
-
2019
- 2019-03-15 CN CN201910195779.XA patent/CN109754985A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102810630A (en) * | 2011-05-30 | 2012-12-05 | 中国科学院物理研究所 | Anisotropy-modulatable magnetic thin-film structure, magneto-dependent sensor and preparation method of magneto-dependent sensor |
| CN104900800A (en) * | 2014-03-03 | 2015-09-09 | 北京嘉岳同乐极电子有限公司 | GMR magnetic nanometer multilayer film used for magneto-dependent sensor |
| CN106207364A (en) * | 2015-04-29 | 2016-12-07 | 中国科学院物理研究所 | Spinning microwave oscillator based on hard magnetic material |
| CN105449096A (en) * | 2015-11-17 | 2016-03-30 | 四川大学 | Magnetic thin film structure, manufacturing and usage methods thereof, magnetic sensitive sensing unit and array |
| CN109273254A (en) * | 2018-09-25 | 2019-01-25 | 电子科技大学 | A method of improving aeolotropic magneto resistor permalloy thin film magnetic property |
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