CN107256924A - Resistive device and preparation method thereof, the preparation method of display base plate, display device - Google Patents
Resistive device and preparation method thereof, the preparation method of display base plate, display device Download PDFInfo
- Publication number
- CN107256924A CN107256924A CN201710434611.0A CN201710434611A CN107256924A CN 107256924 A CN107256924 A CN 107256924A CN 201710434611 A CN201710434611 A CN 201710434611A CN 107256924 A CN107256924 A CN 107256924A
- Authority
- CN
- China
- Prior art keywords
- layer
- metal oxide
- transition metal
- simple substance
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 229910000314 transition metal oxide Inorganic materials 0.000 claims abstract description 75
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 59
- 239000000126 substance Substances 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 238000006479 redox reaction Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 49
- 230000008569 process Effects 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000007639 printing Methods 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- 239000010410 layer Substances 0.000 description 146
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 239000007769 metal material Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 229910021392 nanocarbon Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
The invention discloses a kind of resistive device and preparation method thereof, the preparation method of display base plate, display device, belong to electronic manufacturing field.The preparation method of the resistive device includes：Form first electrode layer；Carbon simple substance layer and transition metal oxide layer that surface contacts with each other are formed in the first electrode layer；The carbon simple substance layer and transition metal oxide layer contacted with each other to the surface is annealed, so that carbon simple substance layer volatilizees in gaseous form at least partially through the redox reaction occurred between the transition metal oxide layer, and the transition metal oxide layer is set to be changed from its internal Lacking oxygen produced to resistive material；Form the second electrode lay.The present invention can solve the problem that the problem of resistive characteristic of resistive device is difficult to adjustment in manufacture craft, realize the manufacture craft of high-quality and the resistive device of low cost.
Description
Technical field
The present invention relates to electronic manufacturing field, more particularly to a kind of resistive device and preparation method thereof, the system of display base plate
Make method, display device.
Background technology
With the progress that new resistive investigation of materials is obtained over the past two years, resistive device starts to be valued by people, and hinders
Become material be it is a kind of can be realized according to applying bias Resistance states change material, and resistive device utilize resistive material
The variable this characteristic of Resistance states carries out the electronic device of Digital Signal Processing.Resistive device can be under forward bias by high-impedance state
It is changed into low resistance state, high-impedance state can also be returned to by low resistance state under reverse bias, so as to be used as switching device, energy
Enough functions of partially or completely substituting transistor in display device.But, it is bound to for example by the manufacturing process of resistive device
When in the manufacture craft of display device, the problem of resistive characteristic for facing resistive device is difficult to adjustment.For example in design technology stream
Cheng Shi, can determine the resistive material of resistive device, and resistive material is made between the electrodes with shape according to many-sided situation
Into required resistive device.And due to resistive material once it is determined that, resistive device in itself resistive characteristic (for example high-impedance state with
Shift voltage between low resistance state) it is exactly relatively-stationary, and can not almost be adjusted by such as changing the means such as technological parameter
It is whole.Thus, at present can only be by changing resistive material and using a whole set of other technical recipe, could make and obtain another
The resistive device of resistive characteristic, and this is extremely difficult in actual production.
The content of the invention
The present invention provides a kind of resistive device and preparation method thereof, the preparation method of display base plate, display device, can solve
The problem of certainly the resistive characteristic of resistive device is difficult to adjustment in manufacture craft.
In a first aspect, the invention provides a kind of preparation method of resistive device, including：
Form first electrode layer；
Carbon simple substance layer and transition metal oxide layer that surface contacts with each other are formed in the first electrode layer；
The carbon simple substance layer and transition metal oxide layer contacted with each other to the surface is annealed, so that carbon simple substance layer is extremely
Volatilize, and make in gaseous form at least partially through the redox reaction occurred between the transition metal oxide layer
The transition metal oxide layer is changed from its internal Lacking oxygen produced to resistive material；
Form the second electrode lay.
It is described that the carbon simple substance that surface contacts with each other is formed in the first electrode layer in a kind of possible implementation
Layer and transition metal oxide layer, including：
Carbon simple substance layer is formed in the first electrode layer；
Transition metal oxide layer is formed on carbon simple substance layer.
It is described to form transition metal oxide layer on carbon simple substance layer in a kind of possible implementation, including：
The colloidal sol of transition metal oxide is printed upon on the carbon simple substance layer by typography, to form transition metal
Oxide skin(coating).
In a kind of possible implementation, the typography is specifically relief printing process or inkjet printing work
Skill.
It is described that the carbon simple substance that surface contacts with each other is formed in the first electrode layer in a kind of possible implementation
Layer and transition metal oxide layer, including：
Transition metal oxide layer is formed in the first electrode layer；
Carbon simple substance layer is formed on the transition metal oxide layer.
In a kind of possible implementation, in the carbon simple substance layer and transition metal oxide contacted with each other to the surface
When layer is made annealing treatment, make carbon simple substance layer volatilization completely in gaseous form.
In a kind of possible implementation, the formation material of the first electrode layer and/or the second electrode lay is metal.
Second aspect, present invention also offers a kind of resistive device, the resistive device uses any one above-mentioned resistive
The preparation method of device makes and obtained.
The third aspect, present invention also offers a kind of preparation method of display base plate, it is characterised in that including：According to upper
Stating the preparation method formation of any one resistive device includes the Rotating fields of resistive device.
Fourth aspect, present invention also offers a kind of display device, including using the system of any one above-mentioned display base plate
Make method and make obtained display base plate.
As shown from the above technical solution, based on the carbon simple substance layer and transiting metal oxidation in annealing process by contacting with each other
Nitride layer formation resistive material, the oxygen that the present invention can be adjusted by adjusting the technological parameter in annealing process in resistive material is empty
Bit distribution, and then the adjustment of the resistive characteristic of resistive device is realized, the resistive characteristic for solving resistive device is difficult in manufacture craft
The problem of to adjust.For prior art, the present invention can be based on realizing high-quality to being adjusted flexibly for resistive characteristic
And the manufacture craft of the resistive device of low cost, large-scale industrial production can be applied to.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, makes required in being described below to embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, rather than
Limitation of the present invention.
Fig. 1 is the schematic flow sheet of the preparation method for the resistive device that one embodiment of the invention is provided；
Fig. 2 is structural representation of the resistive device of one embodiment of the invention offer in manufacturing process；
Fig. 3 is the process and original using relief printing process formation transition metal oxide layer in one embodiment of the invention
Manage schematic diagram；
Fig. 4 is the structural representation for the resistive device that one embodiment of the invention is provided；
Fig. 5 is the schematic diagram of the resistive principle for the resistive device that one embodiment of the invention is provided；
Fig. 6 is the schematic diagram of the resistive characteristic for the resistive device that one embodiment of the invention is provided.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.Obviously, described embodiment is a part of embodiment of the present invention, rather than whole realities
Apply example.Based on described embodiments of the invention, those of ordinary skill in the art institute on the premise of without creative work
The every other embodiment obtained, belongs to the scope of protection of the invention.Unless otherwise defined, the technical term that the present invention is used
Or scientific terminology should be the ordinary meaning that the personage with general technical ability is understood in art of the present invention.In the present invention
" first ", " second " that uses and similar word are not offered as any order, quantity or importance, and are used only to area
Divide different parts.The element or object that " comprising " or similar word mean to occur before the word, which are covered, to be appeared in
The element or object of the word presented hereinafter and its equivalent, and it is not excluded for other elements or object." connection " or " connected "
Physics or machinery connection is not limited to etc. similar word, but electrical connection can be included, and the connection can
To be direct or indirect.
Fig. 1 is the schematic flow sheet of the preparation method for the resistive device that one embodiment of the invention is provided., should referring to Fig. 1
The preparation method of resistive device includes：
Step 101：Form first electrode layer.
Step 102：Carbon simple substance layer and transition metal oxide that surface contacts with each other are formed in the first electrode layer
Layer.
Step 103：The carbon simple substance layer and transition metal oxide layer contacted with each other to the surface is annealed, so that carbon
Simple substance layer at least partially through the redox reaction occurred between the transition metal oxide layer in gaseous form
Volatilization, and the transition metal oxide layer is changed from its internal Lacking oxygen produced to resistive material.
Step 104：Form the second electrode lay.
It should be noted that the execution sequence between step 103 and step 104 can be exchanged with each other, and it is above-mentioned all
One or more step can also be included before step, between each step and after above-mentioned all steps, such as existed
Also include the process for forming insulation material layer and via being formed in insulation material layer after above-mentioned all steps, for another example in step
Also include the process of the transition metal oxide layer conductor of predetermined portions after rapid 103, it is possible to be not limited only to this.
It should also be noted that, above-mentioned first electrode layer and above-mentioned the second electrode lay can be any one conductor material shapes
Into Rotating fields, it is possible to respectively as one in the top electrode and hearth electrode of resistive device.The formation of above-mentioned carbon simple substance layer
Material can be carbon dust, carbon fiber, graphite or nano-carbon material, it is possible to be not limited only to this.Above-mentioned transition metal oxide layer
Formation material can for example including the metal oxide for including one or more kinds of transition metals, can also include two
The polynary complex oxide that kind or two or more transition metal oxides are composited, involved transiting metal oxidation can example
Titanium oxide, nickel oxide, aluminum oxide in this way, it is possible to be not limited only to this.
As can be seen that based in annealing process by contact with each other carbon simple substance layer and transition metal oxide layer form resistance
Become material, the embodiment of the present invention can adjust the Lacking oxygen point in resistive material by adjusting the technological parameter in annealing process
Cloth, and then the adjustment of the resistive characteristic of resistive device is realized, the resistive characteristic for solving resistive device is difficult to adjust in manufacture craft
Whole the problem of.For prior art, the embodiment of the present invention can be based on realizing Gao Pin to being adjusted flexibly for resistive characteristic
The manufacture craft of matter and the resistive device of low cost, can be applied to large-scale industrial production.
Fig. 2 is structural representation of the resistive device of one embodiment of the invention offer in manufacturing process, as shown in Figure 2
The following step that passes through of structure formed：
First step：Being formed on bottom plate includes the figure of first electrode layer.
Wherein, bottom plate may, for example, be the underlay substrate of the materials such as glass, silicon nitride, organic polymer formation, can also
It is the underlay substrate that some Rotating fields are already formed with surface, it is possible to be not limited only to this.First electrode layer in the present embodiment
11 are formed using metal materials, include without being only limitted to copper, aluminium, molybdenum, nickel, silver, platinum, gold (can preferably work function exceed it is specified
The metal material of energy threshold).In a kind of exemplary implementation, forming the process of first electrode layer 11 includes：Clear
With magnetron sputtering technique formation layer of metal film layer on washed bottom plate, and the flow to the metallic diaphragm according to Patternized technique
The processes such as photoresist coating, exposure, development, metal etch, photoresist lift off are carried out, the metallic diaphragm of the patterning formed exists
It is first electrode layer 11 at position shown in Fig. 2.In other implementations, metallic diaphragm can be for example, by vacuum evaporation
Or physical vapour deposition (PVD) (Physical Vapor Deposition, the PVD) technique such as electrochemical deposition is formed on bottom plate, this
The metallic diaphragm of outer patterning can also include in the figures such as horizontal scanning line, transistor electrodes, metal light shield layer, circuit connecting wire
At least one, it is possible to be not limited only to this.
Second step：Being formed in first electrode layer includes the figure of carbon simple substance layer.
In a kind of exemplary implementation, forming the process of carbon simple substance layer 12 includes：After completion of the first step
On substrate, with carbon simple substance material for example, by the physical gas-phase depositions such as vacuum evaporation or magnetron sputtering one layer of C film of formation
(deposit thickness can be much smaller than the thickness of other film layers, such as first electrode layer, transition metal oxide layer and the second electrode lay
Thickness when being in the range of 50~5000nm, the thickness of C film is 1~15nm), then to the C film according to figure
The flow of case chemical industry skill carries out the processes, the figure formed such as photoresist coating, exposure, development, C film etching, photoresist lift off
The C film of case is carbon simple substance layer 12 at the position shown in Fig. 2.In other implementations, one layer of C film is being formed
After can not be patterned, unnecessary C film can be completely removed in follow-up annealing process, or annealing
Etching is employed alone after the completion of process or stripping process is removed, it is possible to this is not limited only to.
Third step：The colloidal sol of transition metal oxide is printed upon on carbon simple substance layer by typography, to be formed
Cross metal oxide layer.
Wherein, typography may, for example, be relief printing process or InkJet printing processes, it is possible to be not limited only to this.
Referring to Fig. 3, in a kind of exemplary implementation, pass through the process of relief printing process formation transition metal oxide layer 13
Including：TiO 2 sol drops to the surface of ink roller 22 at distributor 21, and with inking roller 22 rotate counterclockwise by scraper
23 is floating.As the synchronization of print roller 24 turns clockwise, the relief printing 25 on the roll surface of print roller 24 can pass through
Contact and extruding between the surface of ink roller 22 make TiO 2 sol be transferred to relief printing 25 outer surface each print
In map brushing shape.And turning clockwise with print roller 24, base station 26 can drive sheet material 27 to be printed (i.e. after the completion of second step
Substrate) it is synchronous to left.When the phase mutual connection in surface to be printed of the relief printing 25 in print roller 24 and sheet material 27 to be printed
When touching, TiO 2 sol can be transferred on the surface to be printed of sheet material 27 to be printed under predetermined squeeze pressure effect
Correspondence graphics field, so as to form the printed patterns corresponding with each printed pattern on relief printing 25.It will be appreciated that can
To pass through the point-to-point speed of the rotary speed for controlling ink roller 22, the rotary speed of print roller 24 and base station 26 so that print roller 24
The linear velocity of TiO 2 sol in the linear velocity of the outer surface of upper relief printing 25, ink roller 22, and sheet material to be printed 27
Surface to be printed point-to-point speed it is consistent or approximate consistent, to ensure the order of accuarcy of printing.Pressed by TiO 2 sol
After in specified pattern printing to carbon simple substance layer 12, it can be formed for example, by modes such as dry or sintering with meaning
The transition metal oxide layer of fixed pattern, is transition metal oxide layer 13 at the position shown in Fig. 2.In other realizations
In mode, the selected raw material for being used to form transition metal oxide layer can be the molten of other transition metal oxide materials
Glue (colloid substance lost flowability), it is possible to the colloidal sol of transition metal oxide is printed using other typographies, is wrapped
The process contained can also adjust (increase step, reduction step and/or change step) according to the actual requirements, and the present invention is not done to this
Limitation.
It should be noted that the colloidal sol of above-mentioned transition metal oxide refer specifically to by dry or sintering etc. process can
To form the colloidal sol or gel of transition metal oxide, for example, transition metal oxide is distributed to formed in liquid dispersion system
The colloidal sol or gel without mobility, can by dry or sintering form the transition metal oxide；For another example by metatitanic acid
Butyl ester adds the colloidal sol or gel without mobility formed after absolute ethyl alcohol, can form titanium dioxide after drying or sintering
Titanium, and this can be not limited only to.
Thus, by above-mentioned first to third step, i.e., structure as shown in Figure 2 is formd on bottom plate.A kind of real
Apply in mode, the structure for the resistive device that structure as shown in Figure 2 is ultimately formed is as shown in Figure 4.Specifically, it is as shown in Figure 4
The following step that structure passes through is formed on the basis of the structure shown in Fig. 2：
Four steps：Carbon simple substance layer and transition metal oxide layer are annealed at a predetermined temperature so that carbon simple substance
Layer is volatilized completely in gaseous form by the redox reaction occurred between transition metal oxide layer.
In a kind of exemplary implementation, the first electrode layer that is mainly formed by platinum, mainly formed by titanium dioxide
Transition metal oxide layer and carbon simple substance layer annealed under 200 DEG C~300 DEG C of preset temperature so that carbon simple substance layer and
Redox reaction, i.e. carbon atom and the oxygen atom in transition metal oxide occur on the contact surface for transition metal oxide layer
Combine to form carbon monoxide and/or carbon dioxide.The carbon monoxide and/or carbon dioxide formed can escape in gaseous form
Go out, i.e. carbon simple substance layer can be gradually converted into gas in this course, until carbon simple substance layer is wholly absent.And transiting metal oxidation
Lacking oxygen can be internally formed because some oxygen atoms are lost in nitride layer, the appearance of Lacking oxygen is so that transiting metal oxidation
Nitride layer changes to resistive material.For example shown in Fig. 5, transition metal oxide layer 13 by above-mentioned annealing process with the first electricity
A certain amount of Lacking oxygen Ho is generated at the position that pole layer 11 has a common boundary, these Lacking oxygens Ho can be in the electricity of first electrode layer 11 and second
It is moved, and is arrived when both end voltage reaches the first shift voltage V1 under electric field produced by voltage between pole layer 14 or so
Conductive path is formed at up to the second electrode lay 14, makes the resistance values of the upper and lower ends of transition metal oxide layer 13 from a high resistance
Value mutation is a low-resistance value, that is, realizes transformation of the resistive device from high-impedance state to low resistance state.And if hereafter first
When applying the second shift voltage V2 reverse with the first shift voltage V1 between electrode layer 11 and the second electrode lay 14, Lacking oxygen Ho
Again can be overall to movement at first electrode layer 11 so that conductive path is cut off, and makes the upper and lower ends of transition metal oxide layer 13
Resistance value sport a high resistance from a low-resistance value, that is, realize resistive device from low resistance state to high-impedance state turn
Become.It is used as a kind of more specifically example, a kind of VA characteristic curve of the resistive device formed according to the method for the present embodiment
As shown in Figure 6, it can be seen that when voltage is not above 0.4V all the time, current value is all the time near 0A, representated by the slope of curve
Device resistance value is very big；And current value increases suddenly when voltage reaches 0.5V or so, and with voltage change current value
Also have and more significantly change, the device resistance value representated by the slope of curve is relatively small.As can be seen that the resistive device
Above-mentioned first shift voltage is about in the range of 0.4~0.5V, i.e., device has certain resistive characteristic.
Furthermore, it will be appreciated that what transition metal oxide layer 13 was produced at the position having a common boundary with first electrode layer 11
Lacking oxygen can reduce the barrier height of contact surface so that form good between transition metal oxide layer 13 and first electrode layer 11
Good Ohmic contact, is conducive to the reduction of the resistance of the contact surface.
5th step：Being formed on transition metal oxide layer after annealing includes the figure of the second electrode lay.
Wherein, the second electrode lay 14 can be formed using metal material, include without being only limitted to copper, aluminium, molybdenum, nickel, silver,
Platinum, gold (can preferably work function exceed prescribed energy threshold value metal material).In a kind of exemplary implementation, formed
The process of the second electrode lay 14 includes：Layer of metal film layer is formed on transition metal oxide layer with magnetron sputtering technique, and
Flow to the metallic diaphragm according to Patternized technique carries out photoresist coating, exposure, development, metal etch, photoresist lift off
Etc. process, the metallic diaphragm of the patterning formed is the second electrode lay 14 at the position shown in Fig. 2.In other realization sides
In formula, metallic diaphragm can be for example, by the physical vapour deposition (PVD)s such as vacuum evaporation or electrochemical deposition (Physical Vapor
Deposition, PVD) technique formed, and the metallic diaphragm patterned in addition can also include data wire, transistor electrodes, pixel
At least one of figures such as electrode, public electrode, circuit connecting wire, it is possible to be not limited only to this.Adopted in the second electrode lay 14
When being formed with metal material, Schottky contacts can be formed between the second electrode lay 14 and transition metal oxide layer 13, that is, are had
One very big surface potential barrier height, i.e., the resistance of contact surface also can be relatively large so that the high-resistance resistors foot of resistive device
It is enough big.
Thus, by above-mentioned 4th to the 5th step, i.e., the resistance shown in Fig. 4 is formd on the basis of structure shown in Fig. 2
Become the structure of device, the resistive device there can be resistive characteristic as shown in Figure 6 based on resistive principle as shown in Figure 5.
In the another example of the present invention, the formation material of above-mentioned first electrode layer and/or the second electrode lay be metal with
Outer conductive material, includes but not limited to indium tin oxide, the semi-conducting material of heavy doping, conducting polymer etc..And can manage
Solution, can be easily using metal material formation first electrode layer and/or the second electrode lay for other materials
Schottky resistance and the numerical value of bulk resistor in resistive device are adjusted, the characteristic for the resistive device being more beneficial for required for realizing.
In the another example of the present invention, in the carbon simple substance layer and transition metal oxide layer contacted with each other to the surface
When being made annealing treatment, the carbon simple substance layer is set only partially to volatilize in gaseous form.It will be appreciated that because carbon simple substance can
With with good electric conductivity, therefore when carbon simple substance layer segment is retained between transition metal oxide layer and first electrode layer
Very big influence can not be caused to its contact resistance.And it is understood that compared to volatilizing with making carbon simple substance layer segment, making
The fully volatilization of carbon simple substance layer is more beneficial for being formed the Ohmic contact between transition metal oxide layer and first electrode layer, reduces
Its contact resistance, so that the low resistance state resistance of resistive device is sufficiently small.
The present invention another example in, above-mentioned transition metal oxide layer can also for example, by magnetron sputtering physics
Gas-phase deposition or chemical vapor deposition method are formed, and can equally form the transition metal oxide layer for example shown in Fig. 2
13.And it is understood that compared to other techniques, such as the typography institute of relief printing process or InkJet printing processes
The equipment and processing step needed is simpler, helps to reduce the cost of manufacture of resistive device.
The present invention another example in, served as in above-mentioned example hearth electrode first electrode layer can as top electrode,
And the first electrode layer that top electrode is served as in above-mentioned example can be as hearth electrode, i.e., the preparation method of resistive device can be wrapped
Include：First electrode layer is formed on bottom plate with reference to the production method of above-mentioned 5th step；Exist with reference to the mode of above-mentioned third step
Transition metal oxide layer is formed in first electrode layer；With reference to above-mentioned second step mode on transition metal oxide layer shape
Into carbon simple substance layer；With reference to the mode of above-mentioned first step the second electrode lay is formed on carbon simple substance layer；With reference to above-mentioned four steps
Mode to transition metal oxide layer and carbon simple substance layer anneal.Wherein, the re-annealing after the second electrode lay is formed
Reason for this is that, it can so avoid the oxygen in the Lacking oxygen and air ambient in transition metal oxide layer from being combined, influence resistance
Become the formation of characteristic.It is of course also possible under oxygen-free environment with initial reference to above-mentioned four steps mode to transition metal oxide
Layer and carbon simple substance layer are annealed, and the mode for referring again to above-mentioned first step forms the second electrode lay, can equally avoid oxygen empty
The problem of position is combined with the oxygen in air ambient, but Comparatively speaking it is less favorable for the second electrode lay and transition metal oxide layer
Between Ohmic contact formation.
After be apparent from, the preparation method can form resistive device by the opposite mode of production order, can individually fit
The application scenarios special for some；And according to carbon simple substance layer quilt in the preparation method of the resistive device shown in above-mentioned Fig. 2 and Fig. 4
It is clipped between first electrode layer and transition metal oxide layer and is annealed, therefore external environment can be greatly decreased to annealed
The influence (the problem of being such as combined in the absence of the oxygen in environment with the Lacking oxygen on interface) of journey, thus for resistive device
Resistive characteristic control be easier to carry out.
It is further to note that the mode contacted with each other in the present invention between carbon simple substance layer and transition metal oxide layer
Direct stacking between being not limited only to, can also include being in contact with each other or being covered in outer surface Shangdi by via
Contact etc., it is possible to be not limited only to this.
Based on same inventive concept, the embodiment of the present invention provides a kind of preparation method of display base plate, the display base plate
Preparation method include according to any one above-mentioned resistive device preparation method formation include the Rotating fields of resistive device, the layer
Structure can include without being only limitted to：Grid conducting layer, gate insulator, active layer, source and drain conductive layer, passivation layer, pixel electricity
In pole layer, organic luminous layer, interlayer dielectric layer, common electrode layer, planarization layer any one or it is multiple.Based on above-mentioned
A kind of preparation method of resistive device of anticipating is had the advantage that, includes the preparation method of the display base plate of its all processes
With identical or corresponding beneficial effect.
Based on same inventive concept, the embodiment of the present invention provides a kind of display device, and the display device can include upper
State the display base plate of any one.Display device in the embodiment of the present invention can be：Display panel, mobile phone, tablet personal computer, electricity
Depending on any product or part with display function such as machine, display, notebook computer, DPF, navigator.Based on display
Substrate because comprising resistive device had the advantage that display device also has identical or corresponding advantage.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (10)
1. a kind of preparation method of resistive device, it is characterised in that including：
Form first electrode layer；
Carbon simple substance layer and transition metal oxide layer that surface contacts with each other are formed in the first electrode layer；
The carbon simple substance layer and transition metal oxide layer contacted with each other to the surface is annealed, so that carbon simple substance layer at least portion
Divide ground to be volatilized in gaseous form by the redox reaction occurred between the transition metal oxide layer, and make described
Transition metal oxide layer is changed from its internal Lacking oxygen produced to resistive material；
Form the second electrode lay.
2. according to the method described in claim 1, it is characterised in that described that surface phase mutual connection is formed in the first electrode layer
Tactile carbon simple substance layer and transition metal oxide layer, including：
Carbon simple substance layer is formed in the first electrode layer；
Transition metal oxide layer is formed on carbon simple substance layer.
3. method according to claim 2, it is characterised in that described to form transiting metal oxidation on carbon simple substance layer
Nitride layer, including：
The colloidal sol of transition metal oxide is printed upon on the carbon simple substance layer by typography, to form transiting metal oxidation
Nitride layer.
4. method according to claim 3, it is characterised in that the typography is specifically relief printing process or spray
Black printing technology.
5. according to the method described in claim 1, it is characterised in that described that surface phase mutual connection is formed in the first electrode layer
Tactile carbon simple substance layer and transition metal oxide layer, including：
Transition metal oxide layer is formed in the first electrode layer；
Carbon simple substance layer is formed on the transition metal oxide layer.
6. method according to any one of claim 1 to 5, it is characterised in that in the carbon contacted with each other to the surface
When simple substance layer and transition metal oxide layer are made annealing treatment, make carbon simple substance layer volatilization completely in gaseous form.
7. method according to any one of claim 1 to 5, it is characterised in that the first electrode layer and/or the second electricity
The formation material of pole layer is metal.
8. a kind of resistive device, it is characterised in that the resistive device is using the side as any one of claim 1 to 7
Method makes and obtained.
9. a kind of preparation method of display base plate, it is characterised in that including：According to as any one of claim 1 to 7
Method formation includes the Rotating fields of resistive device.
10. a kind of display device, it is characterised in that including making obtained display base using method as claimed in claim 9
Plate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710434611.0A CN107256924B (en) | 2017-06-09 | 2017-06-09 | Resistive device and preparation method thereof, the production method of display base plate, display device |
| PCT/CN2018/086376 WO2018223801A1 (en) | 2017-06-09 | 2018-05-10 | Resistive device and manufacturing method therefor, manufacturing method for display substrate, and display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710434611.0A CN107256924B (en) | 2017-06-09 | 2017-06-09 | Resistive device and preparation method thereof, the production method of display base plate, display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107256924A true CN107256924A (en) | 2017-10-17 |
| CN107256924B CN107256924B (en) | 2019-10-11 |
Family
ID=60023042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710434611.0A Active CN107256924B (en) | 2017-06-09 | 2017-06-09 | Resistive device and preparation method thereof, the production method of display base plate, display device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107256924B (en) |
| WO (1) | WO2018223801A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018223801A1 (en) * | 2017-06-09 | 2018-12-13 | 京东方科技集团股份有限公司 | Resistive device and manufacturing method therefor, manufacturing method for display substrate, and display apparatus |
| WO2020057053A1 (en) * | 2018-09-20 | 2020-03-26 | Boe Technology Group Co., Ltd. | Method of fabricating display substrate, display substrate, and display apparatus |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW469338B (en) * | 2000-08-07 | 2001-12-21 | Ngk Insulators Ltd | Substrate heating method and the continuous heat treatment furnace thereof |
| WO2009126493A1 (en) * | 2008-04-11 | 2009-10-15 | Sandisk 3D Llc | Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing |
| US20110049463A1 (en) * | 2009-08-28 | 2011-03-03 | Kabushiki Kaisha Toshiba | Nonvolatile memory device and method of fabricating the same |
| US20110227024A1 (en) * | 2010-03-16 | 2011-09-22 | Sekar Deepak C | Resistance-switching memory cell with heavily doped metal oxide layer |
| CN105977379A (en) * | 2016-05-17 | 2016-09-28 | 浙江师范大学 | Silicon oxycarbide film and RRAM (resistive random access memory) |
| CN106340586A (en) * | 2016-09-28 | 2017-01-18 | 西安理工大学 | Preparation method of carbon/nickel oxide resistive memory thin film |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256924B (en) * | 2017-06-09 | 2019-10-11 | 京东方科技集团股份有限公司 | Resistive device and preparation method thereof, the production method of display base plate, display device |
-
2017
- 2017-06-09 CN CN201710434611.0A patent/CN107256924B/en active Active
-
2018
- 2018-05-10 WO PCT/CN2018/086376 patent/WO2018223801A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW469338B (en) * | 2000-08-07 | 2001-12-21 | Ngk Insulators Ltd | Substrate heating method and the continuous heat treatment furnace thereof |
| WO2009126493A1 (en) * | 2008-04-11 | 2009-10-15 | Sandisk 3D Llc | Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing |
| US20110049463A1 (en) * | 2009-08-28 | 2011-03-03 | Kabushiki Kaisha Toshiba | Nonvolatile memory device and method of fabricating the same |
| US20110227024A1 (en) * | 2010-03-16 | 2011-09-22 | Sekar Deepak C | Resistance-switching memory cell with heavily doped metal oxide layer |
| CN105977379A (en) * | 2016-05-17 | 2016-09-28 | 浙江师范大学 | Silicon oxycarbide film and RRAM (resistive random access memory) |
| CN106340586A (en) * | 2016-09-28 | 2017-01-18 | 西安理工大学 | Preparation method of carbon/nickel oxide resistive memory thin film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018223801A1 (en) * | 2017-06-09 | 2018-12-13 | 京东方科技集团股份有限公司 | Resistive device and manufacturing method therefor, manufacturing method for display substrate, and display apparatus |
| WO2020057053A1 (en) * | 2018-09-20 | 2020-03-26 | Boe Technology Group Co., Ltd. | Method of fabricating display substrate, display substrate, and display apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107256924B (en) | 2019-10-11 |
| WO2018223801A1 (en) | 2018-12-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107093500B (en) | A kind of patterning method of silver nanowire flexible transparent conductive film | |
| CN104407734B (en) | The manufacture method and touch screen of touch screen | |
| CN102655146B (en) | Array substrate, array substrate preparation method and display device | |
| WO2016202060A1 (en) | Array substrate and manufacturing method therefor, and display apparatus | |
| EP3093888B1 (en) | Method of fabricating a thin film transistor | |
| CN106155416B (en) | A kind of composite membrane touch sensing and preparation method thereof | |
| CN104766803B (en) | Production method and TFT, array substrate, the display device of TFT | |
| EP3144940B1 (en) | Conductive structure and preparation method therefor | |
| KR101682501B1 (en) | Transparant electrode containing silver nanowire-patterned layer and graphene layer, and manufacturing method thereof | |
| JP2014508373A (en) | Electrode and electronic device including the same | |
| CN103996457A (en) | Silver nanowire thin film and preparation method thereof, array substrate and display device | |
| CN103915451B (en) | A kind of array base palte and manufacture method thereof, display unit | |
| CN104992925A (en) | Manufacturing method for conductive via hole structure, array substrate and display device | |
| CN107256924B (en) | Resistive device and preparation method thereof, the production method of display base plate, display device | |
| CN102508385A (en) | Pixel structure, array substrate and manufacturing method thereof | |
| Hu et al. | Ultra‐low resistivity copper mesh as embedded current collector layer for inkjet‐printed flexible electrochromic device realizing fast response and uniform coloration | |
| CN103700673B (en) | A kind of display device, array base palte and preparation method thereof | |
| KR20140133317A (en) | Transparent conductor comprising silver nanowire and silver grid complex pattern and method of manufacturing the same | |
| CN106133847A (en) | There is transparent conductive body and the manufacture method thereof of the pattern of nanostructured | |
| KR101272713B1 (en) | Manufacturing method of 2 Layer Hybrid transparent electrode | |
| KR20130137851A (en) | Precursor composition for oxide semiconductor, thin film transistor array panel including oxide semiconductor, and manufacturing method of thin film transistor array panel including oxide semiconductor | |
| EP3614426B1 (en) | Conductive pattern structure and preparation method therefor, and array substrate and display device | |
| KR20180007209A (en) | Transparent electrode and its fabrication method | |
| KR100649913B1 (en) | Conductive substrate structure for adjusting resistance by patterning and manufacturing method thereof | |
| CN206020894U (en) | Array base palte and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |