CN106340586A - Preparation method of carbon/nickel oxide resistive memory thin film - Google Patents
Preparation method of carbon/nickel oxide resistive memory thin film Download PDFInfo
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- CN106340586A CN106340586A CN201610859007.8A CN201610859007A CN106340586A CN 106340586 A CN106340586 A CN 106340586A CN 201610859007 A CN201610859007 A CN 201610859007A CN 106340586 A CN106340586 A CN 106340586A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 98
- 229910000480 nickel oxide Inorganic materials 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title claims abstract description 45
- 229910002090 carbon oxide Inorganic materials 0.000 title claims abstract description 15
- 239000010409 thin film Substances 0.000 title abstract description 14
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 80
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000002131 composite material Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 108
- 229910052759 nickel Inorganic materials 0.000 claims description 54
- 230000003647 oxidation Effects 0.000 claims description 48
- 238000007254 oxidation reaction Methods 0.000 claims description 48
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 34
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 24
- 238000001704 evaporation Methods 0.000 claims description 20
- 230000008020 evaporation Effects 0.000 claims description 20
- 229910052697 platinum Inorganic materials 0.000 claims description 17
- 239000012467 final product Substances 0.000 claims description 12
- 108010025899 gelatin film Proteins 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000007738 vacuum evaporation Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 6
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 6
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 claims description 6
- 229940078494 nickel acetate Drugs 0.000 claims description 6
- 239000000835 fiber Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims 1
- 238000010025 steaming Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 78
- 238000010438 heat treatment Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000005477 sputtering target Methods 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 239000002194 amorphous carbon material Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- CSJDCSCTVDEHRN-UHFFFAOYSA-N methane;molecular oxygen Chemical compound C.O=O CSJDCSCTVDEHRN-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a preparation method of a carbon/nickel oxide resistive memory thin film. The method includes the following steps that: a nickel oxide thin film is prepared; and a carbon film is prepared on the nickel oxide thin film, so that a carbon/nickel oxide composite thin film is prepared, top electrode preparation is performed on the carbon/nickel oxide composite thin film through using a sputtering apparatus, and the carbon/nickel oxide resistive memory thin film is obtained. According to the method of the invention, the carbon film and the nickel oxide thin film are composited, and therefore, compared with other materials having resistance variation characteristics, the carbon/nickel oxide composite thin film prepared by the preparation method of the invention has a smooth surface, and the preparation method has the advantages of low preparation cost, simple techniques and easiness in control, and can improve the preparation efficiency of the composite thin film, and the resistance variation performance of the carbon/nickel oxide composite thin film is significantly better than that of a single nickel oxide thin film.
Description
Technical field
The invention belongs to microelectronic material resistance-variable storing device thin-film material technical field is and in particular to a kind of carbon/nickel oxide
The preparation method of Memister film.
Background technology
With the raising of people's life requirement, either notebook computer, portable hard drive or smart mobile phone sum code-phase
The memory that machine etc. is required to excellent performance ensures people to data, the demand to information Store.Meanwhile, the complexity of data and Pang
Substantially make the requirement more and more higher of storage capacity, erasable ability and reading speed to data for the people, low cost, low-power consumption and height
The memory of storage density will become the primary trend of future development.Non-volatility memorizer is mainly with " flash memory " memory
(flash) based on.Flash memory is non-volatile due to having, and each restarting equipment can save substantial amounts of time cost,
Thus be widely used.But its erasable speed slow (more than ms level), and erasing voltage is also higher.These lack
Point makes flash be difficult to meet the demand to information Store for the people.When particularly element height is integrated now, tunnel oxide thickness
Degree more and more thinner, electric charge tunneling effect makes the bad stability of flash memory.Meanwhile, resistance-type memory is continuous
Ground all has each towards low-power consumption, high density, low cost and read or write speed development faster, the resistance-type memory of a new generation
Feature.Therefore, how to reduce erasing voltage while improving its erasable speed is a key issue.
Content of the invention
It is an object of the invention to provide a kind of preparation method of carbon/nickel oxide Memister film, solve existing depositing
The problem that reservoir erasable speed is slow and erasing voltage is high.
The technical solution adopted in the present invention is, a kind of preparation method of carbon/nickel oxide Memister film, specifically presses
Implement according to following steps:
Step 1, prepares nickel oxide film；
Step 2, prepares carbon film on step 1 gained nickel oxide film, obtains carbon/oxidation nickel composite film；
Step 3, carries out top electrode preparation using sputter to step 2 gained carbon/oxidation nickel composite film, obtains final product.
The present invention is further characterized in that,
In step 1, the preparation process of nickel oxide film is:
Step 1.1: prepare oxidation nickel sol；
Step 1.2: at room temperature, using dipping-pulling method by step 1.1 gained oxidation nickel sol in pt platinum electrode base
Lift on plate, obtain nickel oxide gel film；
Step 1.3: after the nickel oxide gel film that step 1.2 is obtained is dried at room temperature for, toast at 60～80 DEG C
10～15min, is subsequently heat-treated 20～30min at a temperature of 300～700 DEG C, after cooling, obtains final product on pt platinum electrode substrate
Nickel oxide film.
In step 1.1, the process for preparation of oxidation nickel sol is: by nickel acetate, acetylacetone,2,4-pentanedione, acrylic acid and EGME
Consumption mixing by 1:1:1:12.
In step 2, the preparation process of carbon/oxidation nickel composite film is:
Step 1 gained nickel oxide film is placed on the supporting spring of vacuum evaporation instrument fixing, then carbon rope is fixed on carbon
Evaporation source on；Open vacuum evaporation instrument power supply, the electric current adjusting evaporation instrument, to 50～60a, is deposited with, after carbon fracture of rope,
Stop evaporation, after cooling, obtain final product carbon/oxidation nickel composite film.
Carbon rope is made up of the graphite fibre of purity 99%, a diameter of 2 millimeters, and carbon rope length degree is 1 centimetre.
In step 3, using the process that sputter carries out top electrode preparation to carbon/oxidation nickel composite film it is: open sputtering
Instrument, carbon/oxidation nickel composite film sample is put into, fixes mask plate (mask), then open sputter power supply, taken out
Gas, when vacuum reaches 1*10-3After pa, the sputtering of top electrode is carried out to it.
Sputtering target material is pt, and purity is 99.9%, and sputtering time is 5～7min.
The invention has the beneficial effects as follows, carbon film is combined with nickel oxide film, is compared to other and there is resistive spy
The material of property, the smooth surface of carbon/oxidation nickel composite film, preparation cost is low, process is simple, be easily controlled, and improves preparation
The preparation efficiency of laminated film, and its change resistance performance is substantially better than single nickel oxide film.
Brief description
Fig. 1 is atomic force (afm) scanned photograph on the embodiment of the present invention 1 gained nickel oxide film surface；
Fig. 2 is atomic force (afm) scanned photograph on the embodiment of the present invention 2 gained nickel oxide film surface；
Fig. 3 is atomic force (afm) scanned photograph on the embodiment of the present invention 3 nickel oxide film surface；
Fig. 4 is nickel oxide film heat treatment cycle curve figure in the inventive method；
Fig. 5 is C-V characteristic (i-v) curve of the embodiment of the present invention 3 gained carbon/nickel oxide Memister thin-film device；
Fig. 6 be the embodiment of the present invention 3 gained carbon/nickel oxide Memister film in each element with etching depth change
Curve map.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawings and detailed description.
A kind of preparation method of carbon of the present invention/nickel oxide Memister film, specifically implements according to following steps:
Step 1, prepares nickel oxide film:
Step 1.1: prepare oxidation nickel sol: nickel acetate, acetylacetone,2,4-pentanedione, acrylic acid and EGME are pressed 1:1:1:12
Consumption (herein amount ratio be mol ratio) mixing, during preparation, in glove box, (under room temperature) is prepared；
Step 1.2: at room temperature, using dipping-pulling method by step 1.1 gained oxidation nickel sol in pt platinum electrode base
Lift on plate, obtain nickel oxide gel film；
Step 1.3: after the nickel oxide gel film that step 1.2 is obtained is dried at room temperature for, toast at 60～80 DEG C
10～15min, the volatilization that can accelerate liquid phase component promotes intermolecular polymerisation, subsequently at heat at a temperature of 300～700 DEG C
Reason 20～30min (heat treatment is carried out in heat-treatment furnace), is finally cooled to room temperature with heat-treatment furnace, that is, heat treatment process is one
The process of individual heating and heat preservation cooling, obtains final product the nickel oxide film on pt platinum electrode substrate.
Step 2, step 1 gained nickel oxide film is placed on the supporting spring of vacuum evaporation instrument fixing, then that carbon rope is solid
It is scheduled on the evaporation source of carbon；Open vacuum evaporation instrument power supply, the electric current adjusting evaporation instrument, to 50～60a, is deposited with, and carbon rope breaks
After splitting, stop evaporation, after cooling, obtain final product carbon/oxidation nickel composite film；Wherein, carbon rope by purity 99%, a diameter of 2 millimeters
Graphite fibre is made, and carbon rope length degree is 1 centimetre.
Step 3, carries out top electrode preparation using sputter to step 2 gained carbon/oxidation nickel composite film: open sputtering
Instrument, carbon/oxidation nickel composite film sample is put into, fixes mask plate (mask), then open sputter power supply, taken out
Gas, when vacuum reaches 1*10-3After pa, the sputtering of top electrode is carried out to it, obtain final product.Sputtering target material is pt, and purity is 99.9%,
Sputtering time is 5～7min.
Embodiment 1
Step 1: weigh nickel acetate, acetylacetone,2,4-pentanedione, acrylic acid and EGME respectively by the amount ratio of 1:1:1:12, mix
After conjunction, obtain oxidation nickel sol；At room temperature, using dipping-pulling method, carry out oxygen using pulling machine on pt platinum electrode substrate
Change the lifting of nickel gel film, after the nickel oxide gel film that lifting is obtained is dried at room temperature, toast at 60 DEG C
10min, is subsequently heat-treated 20min at a temperature of 300 DEG C, then takes out and naturally cool to room temperature, that is, obtain in pt platinum electrode
Nickel oxide film on substrate.
Step 2: the preparation of carbon/oxidation nickel composite film: step 1 gained nickel oxide film is placed on vacuum evaporation instrument
Fixing on supporting spring, then by purity 99%, a diameter of 2 millimeters, the carbon rope of length 1cm is fixed on the evaporation source of carbon；Open true
Empty evaporation instrument power supply, the electric current adjusting evaporation instrument, to 50a, is deposited with, and after carbon fracture of rope, stops evaporation, after cooling, obtains final product
Carbon/oxidation nickel composite film.
Step 3: open sputter, the carbon/oxidation nickel composite film sample of preparation on pt platinum electrode is put into, fixing
Good mask plate (mask), is evacuated, when vacuum reaches 1*10-3The sputtering of top electrode can be carried out to it after pa.Sputtering target material
For pt, purity is 99.9%, and sputtering time is 5 minutes.The pt layer having sputtered is carbon/oxidation nickel composite film Memister
Top electrode.One complete carbon/oxidation nickel composite film resistance memory cell is just prepared and is completed.
Using AFM (afm), the present embodiment (300 DEG C of heat treatments) gained nickel oxide film surface is carried out
Microexamination, Fig. 1 is the flat scanning figure of nickel oxide film, and scan area is 1*1um2.
Embodiment 2
Step 1: weigh nickel acetate, acetylacetone,2,4-pentanedione, acrylic acid and EGME respectively by the amount ratio of 1:1:1:12, mix
After conjunction, obtain oxidation nickel sol；At room temperature, using dipping-pulling method, carry out oxygen using pulling machine on pt platinum electrode substrate
Change the lifting of nickel gel film, after the nickel oxide gel film that lifting is obtained is dried at room temperature, toast at 70 DEG C
13min, is subsequently heat-treated 25min at a temperature of 500 DEG C, then takes out natural cooling, that is, obtain on pt platinum electrode substrate
Nickel oxide film.
Step 2: the preparation of carbon/oxidation nickel composite film: step 1 gained nickel oxide film is placed on vacuum evaporation instrument
Fixing on supporting spring, then by purity 99%, a diameter of 2 millimeters, the carbon rope of length 1cm is fixed on the evaporation source of carbon；Open true
Empty evaporation instrument power supply, the electric current adjusting evaporation instrument, to 55a, is deposited with, and after carbon fracture of rope, stops evaporation, after cooling, obtains final product
Carbon/oxidation nickel composite film.
Step 3: open sputter, the carbon/oxidation nickel composite film sample of preparation on pt platinum electrode is put into, fixing
Good mask plate (mask), is evacuated, when vacuum reaches 1*10-3The sputtering of top electrode can be carried out to it after pa.Sputtering target material
For pt, purity is 99.9%, and sputtering time is 6 minutes.The pt layer having sputtered is carbon/oxidation nickel composite film Memister
Top electrode.One complete carbon/oxidation nickel composite film resistance memory cell is just prepared and is completed.
Using AFM (afm), the present embodiment (500 DEG C of heat treatments) gained nickel oxide film surface is carried out
Microexamination, Fig. 2 is the flat scanning figure of nickel oxide film, and scan area is 1*1um2.
Embodiment 3
Step 1: weigh nickel acetate, acetylacetone,2,4-pentanedione, acrylic acid and EGME respectively by the amount ratio of 1:1:1:12, mix
After conjunction, obtain oxidation nickel sol；At room temperature, using dipping-pulling method, carry out oxygen using pulling machine on pt platinum electrode substrate
Change the lifting of nickel gel film, after the nickel oxide gel film that lifting is obtained is dried at room temperature, toast at 80 DEG C
15min, is subsequently heat-treated 30min at a temperature of 700 DEG C, then takes out and naturally cool to room temperature, that is, obtain in pt platinum electrode
Nickel oxide film on substrate.
Step 2: the preparation of carbon/oxidation nickel composite film: step 1 gained nickel oxide film is placed on vacuum evaporation instrument
Fixing on supporting spring, then by purity 99%, a diameter of 2 millimeters, the carbon rope of length 1cm is fixed on the evaporation source of carbon；Open true
Empty evaporation instrument power supply, the electric current adjusting evaporation instrument, to 60a, is deposited with, and after carbon fracture of rope, stops evaporation, after cooling, obtains final product
Carbon/oxidation nickel composite film.
Step 3: open sputter, the carbon/oxidation nickel composite film sample of preparation on pt platinum electrode is put into, fixing
Good mask plate (mask), is evacuated, when vacuum reaches 1*10-3The sputtering of top electrode can be carried out to it after pa.Sputtering target material
For pt, purity is 99.9%, and sputtering time is 7 minutes.The pt layer having sputtered is carbon/oxidation nickel composite film Memister
Top electrode.One complete carbon/oxidation nickel composite film resistance memory cell is just prepared and is completed.
Using AFM (afm), the present embodiment (700 DEG C of heat treatments) gained nickel oxide film surface is carried out
Microexamination, Fig. 3 is the flat scanning figure of nickel oxide film, and scan area is 1*1um2.
The electrology characteristic test at normal temperatures of the embodiment of the present invention 3 gained carbon/oxidation nickel composite film Memister, if
Put the testing research that current protection limit (compliance current) is 10ma；Nickel oxide film heat treatment in the inventive method
Process curve figure is as shown in Figure 4.
Fig. 5 is C-V characteristic (i-v) curve of carbon/oxidation nickel composite film Memister, and the electric current shown in figure is protected
Shield is limited to 1ma, and the curve of in figure is C-V characteristic (i-v) curve after loop test 10 times, shows more stable bipolar
Resistance switch performance.The electric resistance changing effect that pt/c/nio/pt device can significantly be found out from figure is bipolarity, and device
The initial resistance of part is low resistance state, and therefore pt/c/nio/pt device there occurs reset process.During reset, voltage is little
When 1.3v, the resistance value of low resistance state is kept approximately constant.When voltage reaches 1.3v, with the low-resistance of the increase device of voltage
The resistance of state is gradually reduced, and resistance state is changed into high-impedance state by low resistance state, and device occurs reset process.
Consult work function respectively 4.8ev, 5ev, 5.6ev that pertinent literature obtains nio, c, pt, because the work function of c is little
In pt work function so that the Interfacial Potential Barrier area of c and pt is very thin, carrier tunnelling probability greatly enhances, and has high load
Flowing sub- injection effect, so being Ohmic contact between c/pt, being also Ohmic contact in the same manner between nio/c.The interface of Ohmic contact
Resistance value is smaller, it is only necessary to the test voltage of a very little or electric current just can promote pt/ when to device applied voltage
Nio/c/pt resistive memory be internally formed conductive filament.
Carry out deep etching using x-ray photoelectron spectroscopy (xps) to carbon/oxidation nickel composite film Memister to divide
Analysis, obtains Fig. 6.Wherein, curve a is the percentage composition change curve of oxygen element, and b is the percentage composition change curve of carbon, c
Percentage composition change curve for ni element.As can be seen from the figure the percentage composition of sample element is with etch period and etching
Depth constantly improves generation and significantly changes.Because carbon has good adsorptivity, can adsorb a certain amount of on the surface of carbon
Oxygen element, with the increase of etching depth, the oxygen element on surface can constantly be worn away, and constituent content constantly declines.Work as quarter
When erosion depth progressivelyes reach the top layer of carbon film, the content of carbon constantly can improve with the increase of etching depth, further
Etching, the content of carbon keeps constant.
The preparation based on carbon/oxidation nickel composite film for the present invention, is compared to the material that other have resistive characteristic, binary
Metal oxide and amorphous carbon material have the characteristics that structure is simple, material component is easily controlled, and its resistive characteristic is excellent
In single nickel oxide film, with traditional cmos technique, there is good compatibility simultaneously.
The present invention is using the preparation carrying out carbon/oxidation nickel composite film on pt platinum electrode and further to carbon/oxidation
The electric property of nickel composite film is studied.
Sol-gel process is respectively adopted using the inventive method and vacuum vapour deposition combines, the oxidation nickel sol of configuration
Nickel oxide film stable and being obtained on pt platinum electrode using this preparation method, is then made on the surface of nickel oxide film
Prepare carbon film with vacuum vapour deposition, just can obtain the excellent carbon of change resistance performance/oxidation nickel composite film.Carbon/nickel oxide THIN COMPOSITE
The smooth surface of film, preparation cost is low, process is simple, be easily controlled, and improves the preparation efficiency preparing laminated film, and its
Change resistance performance is substantially better than single nickel oxide film.
Claims (7)
1. a kind of preparation method of carbon/nickel oxide Memister film is it is characterised in that specifically implement according to following steps:
Step 1, prepares nickel oxide film；
Step 2, prepares carbon film on step 1 gained nickel oxide film, obtains carbon/oxidation nickel composite film；
Step 3, carries out top electrode preparation using sputter to step 2 gained carbon/oxidation nickel composite film, obtains final product.
2. a kind of preparation method of carbon according to claim 1/nickel oxide Memister film is it is characterised in that walk
In rapid 1, the preparation process of nickel oxide film is:
Step 1.1: prepare oxidation nickel sol；
Step 1.2: at room temperature, step 1.1 gained is aoxidized on pt platinum electrode substrate by nickel sol using dipping-pulling method
Lifting, obtains nickel oxide gel film；
Step 1.3: by step 1.2 be obtained nickel oxide gel film be dried at room temperature for after, at 60～80 DEG C baking 10～
15min, is subsequently heat-treated 20～30min at a temperature of 300～700 DEG C, after cooling, obtains final product the oxygen on pt platinum electrode substrate
Change nickel film.
3. a kind of preparation method of carbon according to claim 2/nickel oxide Memister film is it is characterised in that walk
In rapid 1.1, the process for preparation of oxidation nickel sol is: by nickel acetate, acetylacetone,2,4-pentanedione, acrylic acid and EGME by 1:1:1:12
Consumption mixing.
4. a kind of preparation method of carbon according to claim 1/nickel oxide Memister film is it is characterised in that walk
In rapid 2, the preparation process of carbon/oxidation nickel composite film is:
Step 1 gained nickel oxide film is placed on the supporting spring of vacuum evaporation instrument fixing, then carbon rope is fixed on the steaming of carbon
On rising；Open vacuum evaporation instrument power supply, the electric current adjusting evaporation instrument, to 50～60a, is deposited with, after carbon fracture of rope, stop
Evaporation, after cooling, obtains final product carbon/oxidation nickel composite film.
5. a kind of preparation method of carbon according to claim 4/nickel oxide Memister film is it is characterised in that carbon
Rope is made up of the graphite fibre of purity 99%, a diameter of 2 millimeters, and carbon rope length degree is 1 centimetre.
6. a kind of preparation method of carbon according to claim 1/nickel oxide Memister film is it is characterised in that walk
In rapid 3, using the process that sputter carries out top electrode preparation to carbon/oxidation nickel composite film it is: open sputter, by carbon/oxygen
Change nickel composite film sample to put into, fix mask plate, then open sputter power supply, be evacuated, when vacuum reaches 1*
10-3After pa, the sputtering of top electrode is carried out to it.
7. a kind of preparation method of carbon according to claim 6/nickel oxide Memister film is it is characterised in that splash
Material of shooting at the target is pt, and purity is 99.9%, and sputtering time is 5～7min.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256924A (en) * | 2017-06-09 | 2017-10-17 | 京东方科技集团股份有限公司 | Resistive device and preparation method thereof, the preparation method of display base plate, display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140175355A1 (en) * | 2012-12-20 | 2014-06-26 | Intermolecular Inc. | Carbon Doped Resistive Switching Layers |
| CN104518083A (en) * | 2013-09-26 | 2015-04-15 | 中国科学院宁波材料技术与工程研究所 | Memory cell of resistive random access memory and preparation method thereof |
| CN105714250A (en) * | 2016-02-19 | 2016-06-29 | 西安理工大学 | Preparation method of N-doped amorphous carbon film resistive random access memory |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140175355A1 (en) * | 2012-12-20 | 2014-06-26 | Intermolecular Inc. | Carbon Doped Resistive Switching Layers |
| CN104518083A (en) * | 2013-09-26 | 2015-04-15 | 中国科学院宁波材料技术与工程研究所 | Memory cell of resistive random access memory and preparation method thereof |
| CN105714250A (en) * | 2016-02-19 | 2016-06-29 | 西安理工大学 | Preparation method of N-doped amorphous carbon film resistive random access memory |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107256924A (en) * | 2017-06-09 | 2017-10-17 | 京东方科技集团股份有限公司 | Resistive device and preparation method thereof, the preparation method of display base plate, display device |
| CN107256924B (en) * | 2017-06-09 | 2019-10-11 | 京东方科技集团股份有限公司 | Resistive device and preparation method thereof, the production method of display base plate, display device |
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