CN107253100A - The system and method that a kind of utilization magnetic field and laser are ground to wafer - Google Patents
The system and method that a kind of utilization magnetic field and laser are ground to wafer Download PDFInfo
- Publication number
- CN107253100A CN107253100A CN201710652981.1A CN201710652981A CN107253100A CN 107253100 A CN107253100 A CN 107253100A CN 201710652981 A CN201710652981 A CN 201710652981A CN 107253100 A CN107253100 A CN 107253100A
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- China
- Prior art keywords
- wafer
- magnetic field
- grinding
- femtosecond laser
- laser
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/005—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using a magnetic polishing agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses the system and method that a kind of utilization magnetic field and laser are ground to wafer, system includes femtosecond laser generator, robotic arm, 3D image-forming modules, wafer, operating platform, magnetic field generator, grinding sap cavity；Grinding sap cavity is fixedly installed on operating platform, and wafer is fixedly installed on lapping liquid intracavitary, and lapping liquid intracavitary is filled with lapping liquid；Femtosecond laser generator and magnetic field generator are fixedly installed on robotic arm；3D image-forming modules are used to obtain crystal column surface shape characteristic and set up 3D models, calculate the surfacing position coordinate for needing to remove.The present invention provide it is a kind of control magnetic nanoparticle in lapping liquid to carry out the method for carrying out point grinding after the grinding of face to wafer using femtosecond laser to wafer using magnetic field, while there is efficiency high, the characteristics of precision is high.
Description
Technical field
The invention belongs to grinding wafer technical field magnetic nanoparticle pair in magnetic field control lapping liquid is utilized there is provided one kind
Wafer wafer is carried out using femtosecond laser after the grinding of face the system and method for point grinding.
Background technology
Wafer refers to the silicon wafer used in silicon semiconductor production of integrated circuits, because it is shaped as circle, therefore referred to as wafer；
Various circuit component structures can be manufactured on silicon, and as the IC products for having specific electrical functionality.The original of wafer
Beginning material is silicon, and there is nexhaustible silica on earth's crust surface.Silica ore is refined via electric arc furnaces, hydrochloric acid chlorine
Change, and after distillation, the polysilicon of high-purity has been made.Pass through photomechanical production again, grind, polish, the program such as section, by polycrystalline
Silicon melts pull-out monocrystalline silicon crystal bar, is then cut into wafer very thin one by one.
Wafer is during the attrition process of its thinning back side, and the control of surface quality is particularly significant.Surface quality is bad
Wafer can have the hidden danger such as stress concentration, crack, split wafer when, the massive losses that wafer can be caused to burst apart, or
Influence the failure of subsequent wafer low-temperature bonding technique.Surface roughness is to weigh the important parameter of surface quality, and it is to processing
The overall merit of the microcosmic geometries characteristic of all small spacing in surface and peak valley unevenness, can reflect that surface stress is distributed
Situation, the quality of surface quality is judged with this.The surface roughness parameter Ra (profile arithmetic average error) of wafer is typically required
Between 0.01 μm to 0.8 μm.
In industry the method on current grinding crystal wafer surface be use traditional abrasion wheel grinding method, or improve after change
Learn mechanical grinding method (CMP).For example, CN101879700B《Chemical mechanical polishing, the Ginding process of wafer and wafer are ground
Grinding system》, CN102909646B《Chemical and mechanical grinding method》.Foregoing both of which is to go contact brilliant using a plane
The method for processing surface of circular surfaces, although can effectively meet general production requirement, but such as further to reach fine point processing
Then it is unable to reach in technical principle.
The content of the invention
In order to solve the above-mentioned technical problem, magnetic nanoparticle in magnetic field control lapping liquid is utilized the invention provides one kind
Carry out carrying out wafer using femtosecond laser after the grinding of face the system and method for point grinding to wafer, ground for solving existing wafer
Grinding process can not realize the problem processed efficient face and be combined with the high-precision dot processing of nanometer resolution.
The technical scheme that is used of system of the present invention is：What a kind of utilization magnetic field and laser were ground to wafer is
System, it is characterised in that：Occur including femtosecond laser generator, robotic arm, 3D image-forming modules, wafer, operating platform, magnetic field
Device, grinding sap cavity；
The grinding sap cavity is fixedly installed on the operating platform, and the wafer is fixedly installed on the grinding sap cavity
Interior, the lapping liquid intracavitary is filled with lapping liquid；
The femtosecond laser generator and magnetic field generator are fixedly installed on the robotic arm；The 3D is imaged mould
Block is used to obtain the crystal column surface shape characteristic and sets up 3D models, calculates the surfacing position coordinate for needing to remove.
The technical scheme that is used of method of the present invention is：The side that a kind of utilization magnetic field and laser are ground to wafer
Method, it is characterised in that comprise the following steps：
Step 1：Magnetic field generator produces magnetic field, and mechanical arm carries magnetic field generator close to grinding sap cavity, and does parallel
In the rotary motion of crystal column surface, obtain rotating excitation field to drive magnetic nanoparticle to reach the surfacing mesh of grinding crystal wafer
's；
Step 2：3D image-forming modules obtain the crystal column surface shape characteristic and set up 3D models, calculate the table for needing to remove
Facestock material position coordinate；
Step 3：Robotic arm is moved according to the surfacing position coordinate of calculating, makes femtosecond laser generator alignment surface
The coordinate position at material position, occurring femtosecond laser beam irradiation needs to remove the surfacing of material.
The invention has the advantages that：
Control the magnetic nano-particle in lapping liquid to carry out efficient grinding to wafer using magnetic field, then use
The a diameter of sub-micron of femtosecond laser beam, minimum machining area can reach nano level machining resolution, realize that nanoscale is differentiated
The point processing grinding technics of rate, improves the precision of grinding wafer processing technology.The method that the present invention is provided have efficiency high and
The characteristics of precision is high.
Brief description of the drawings
Fig. 1 is the system structure diagram of the embodiment of the present invention；
Fig. 2 is the method flow diagram of the embodiment of the present invention；
The method schematic that Fig. 3 is ground for the utilization magnetic field of inventive embodiments to wafer；
The method schematic that Fig. 4 is ground for the utilization laser that the present invention is implemented to wafer.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is all other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
The system being ground see Fig. 1, the present invention a kind of utilization magnetic field provided and laser to wafer, including femtosecond swash
Optical generator 11, robotic arm 12,3D image-forming modules 13, wafer 14, operating platform 15, magnetic field generator 17, grinding sap cavity 18；
Grinding sap cavity 18 is fixedly installed on operating platform 15, and wafer 14 is fixedly installed in grinding sap cavity 18, is filled out in grinding sap cavity 18
Filled with lapping liquid 16；Femtosecond laser generator 11 and magnetic field generator 17 are fixedly installed on robotic arm 12；3D is imaged mould
Block 13 is used to obtain the surface appearance feature of wafer 14 and sets up 3D models, calculates the position coordinate of surfacing 141 for needing to remove.
The surfacing 141 at illuminated position under superenergy through molten state direct gasification or as high density, it is superthermal,
The plasmoid of high pressure and be removed.Repeat other positions for needing removal material on action irradiation wafer 14 i.e. reachable
To the purpose on the surface of grinding crystal wafer 14.And due to the phase of surfacing 141 at the illuminated position of femtosecond laser beam 141 and crystal column surface
Interaction time is very short, and the edges of regions being lasered almost is not damaged.And because femtosecond laser beam 141 has sub-micron
Diameter, machining area is minimum, and the existing face widely used in the industrial production of high-precision processing technology contrast of point processing can be achieved
The cmp of processing.
The method being ground see Fig. 2, the present invention a kind of utilization magnetic field provided and laser to wafer, its feature exists
In comprising the following steps：
Step 1：Magnetic field generator 17 produces magnetic field, and mechanical arm 12 carries magnetic field generator 17 close to grinding sap cavity 18,
And rotary motion parallel to the surface of wafer 14 is done, rotating excitation field is obtained to drive magnetic nanoparticle 161 to reach grinding crystal wafer
14 purpose of surfacing 141；
Step 2：3D image-forming modules 13 obtain the surface appearance feature of wafer 14 and set up 3D models, calculate the table for needing to remove
The position coordinate of facestock material 141；
Step 3：Robotic arm 12 is moved according to the position coordinate of surfacing 141 of calculating, makes femtosecond laser generator 11
The coordinate position at the position of alignment surface material 141, occurs femtosecond laser beam 111 and irradiates the surfacing 141 for needing to remove material.
Referring to Fig. 3, present invention could apply in the grinding technics of wafer 14.Lapping liquid 16 is full of around wafer 14, is ground
Magnetic nanoparticle 161 is uniformly distributed in grinding fluid 16, magnetic field generator 17 produces magnetic field B, and magnetic field is received by rotation driving magnetic
The mobile mutual collision friction of protrusion material 141 with the surface of wafer 14 in lapping liquid 16 of rice grain 161, causes the surface of wafer 14
Protrusion material 141 come off, so as to play the purpose of grinding.
Referring to Fig. 4, femtosecond laser generator 11 produces the vertical irradiation wafer of femtosecond laser beam 111 with sub-micron diameter
The protruding parts material 141 on 14 surfaces.The pulse width of femtosecond laser beam 111 is short so that heat energy has little time to be diffused into laser Jiao very much
Region beyond point, the heat energy of deposition is limited at the shallow region of crystal column surface, makes the material at the illuminated position of crystal column surface
141 under superenergy through molten state direct gasification.Even the material 141 at illuminated position is absorbing photon because the energy produced
The electron temperature generated after amount is significantly larger than gasification temperature and causes it to eventually become high density, superthermal, high pressure plasma
State.So that the material 141 at illuminated position is removed.Resetting is used on the irradiation wafer 14 of femtosecond laser beam 111
Protruding parts material, you can reach the purpose of grinding crystal wafer 14.Due to femtosecond laser beam 141 and the illuminated position of crystal column surface
The interaction time of material 141 is very short, and the edges of regions being lasered almost is not damaged.Cut due to femtosecond laser beam 141
With sub-micron diameter, machining area is minimum, and the high-precision processing technology of point processing can be achieved.
The wafer 14 of the present embodiment is placed in the grinding sap cavity 18 of the closing full of lapping liquid, uniform in lapping liquid 16
Be studded with the magnetic nano-particle of tool, using magnetic field generator 17 produce field drives have magnetic nano-particle motion with
The surface collision of wafer 14, friction are with the femtosecond laser beam of the material for the protruding parts for removing crystal column surface, then sub-micron diameter
The position that 111 fixed point irradiation wafer 14 surfaces are protruded.Energy density is not less than 0.8Jcm-2, no more than 1.5Jcm-2Femtosecond swash
Light impulse length is short so that heat energy has little time to be diffused into the region beyond laser spot very much, and the heat energy of deposition is limited at wafer
The shallow region on surface, makes the material at the illuminated position of crystal column surface under superenergy through molten state direct gasification.Or even material
Expect absorbing photon because the electron temperature generated after the energy produced is significantly larger than gasification temperature and causes it to eventually become height
Density, superthermal, high pressure plasmoid.Laser and the material interaction time at the illuminated position of crystal column surface are very short,
The edges of regions being lasered almost is not damaged.The crystal column surface polished in other needs all repeats this process, so that it may
To reach the purpose on fine wafer polishing surface.And in 0.8Jcm-2With 1.5Jcm-2In the range of adjustment femtosecond laser energy it is close
Degree, the then material thickness that each hair femto-second laser pulse can be controlled to be removed.When the energy density of femtosecond laser is in 0.8Jcm-2
With 1.5Jcm-2In the range of when changing, the material thickness removed changes between 100nm to 300nm.In actual grinding process
In, high-precision grinding technics can be realized by adjusting the energy density of femtosecond laser.
Magnetic nanoparticle makes after carrying out face grinding to wafer in a kind of lapping liquid using magnetic field control that the present invention is provided
The method of some grindings is carried out to wafer with femtosecond laser, while there is efficiency high, the characteristics of precision is high.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God is with principle, and any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (5)
1. the system that a kind of utilization magnetic field and laser are ground to wafer, it is characterised in that：Including femtosecond laser generator
(11), robotic arm (12), 3D image-forming modules (13), wafer (14), operating platform (15), magnetic field generator (17), lapping liquid
Chamber (18)；
The grinding sap cavity (18) is fixedly installed on the operating platform (15), and the wafer (14) is fixedly installed on described grind
In grinding fluid chamber (18), lapping liquid (16) is filled with the grinding sap cavity (18)；
The femtosecond laser generator (11) and magnetic field generator (17) are fixedly installed on the robotic arm (12)；It is described
3D image-forming modules (13) are used to obtain the wafer (14) surface appearance feature and set up 3D models, calculate the surface for needing to remove
Material (141) position coordinate.
2. a kind of method that utilization magnetic field and laser are ground to wafer, it is characterised in that comprise the following steps：
Step 1：Magnetic field generator (17) produces magnetic field, and mechanical arm (12) carries magnetic field generator (17) close to grinding sap cavity
(18), and rotary motion parallel to wafer (14) surface is done, obtains rotating excitation field to drive magnetic nanoparticle (161) to reach
Surfacing (141) purpose of grinding crystal wafer (14)；
Step 2：3D image-forming modules (13) obtain wafer (14) surface appearance feature and set up 3D models, and calculating needs to remove
Surfacing (141) position coordinate；
Step 3：Robotic arm (12) is moved according to surfacing (141) position coordinate of calculating, makes femtosecond laser generator
(11) coordinate position at alignment surface material (141) position, occurring femtosecond laser beam (111) irradiation needs to remove the surface of material
Material (141).
3. the method that utilization magnetic field according to claim 2 and laser are ground to wafer, it is characterised in that：It is described to fly
A diameter of sub-micron diameter of second laser beam (111).
4. the method that the utilization magnetic field and laser according to Claims 2 or 3 are ground to wafer, it is characterised in that：Institute
The laser of femtosecond laser beam (111) is stated, energy density is not less than 0.8Jcm-2, no more than 1.5Jcm-2。
5. the method that the utilization magnetic field and laser according to Claims 2 or 3 are ground to wafer, it is characterised in that：Step
In rapid 3, on femtosecond laser beam (111) vertical irradiation to the wafer (14) surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710652981.1A CN107253100A (en) | 2017-08-02 | 2017-08-02 | The system and method that a kind of utilization magnetic field and laser are ground to wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710652981.1A CN107253100A (en) | 2017-08-02 | 2017-08-02 | The system and method that a kind of utilization magnetic field and laser are ground to wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107253100A true CN107253100A (en) | 2017-10-17 |
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ID=60026482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710652981.1A Pending CN107253100A (en) | 2017-08-02 | 2017-08-02 | The system and method that a kind of utilization magnetic field and laser are ground to wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109623516A (en) * | 2018-12-26 | 2019-04-16 | 湖北攀峰钻石科技有限公司 | A kind of diamond segment blade grinding machine |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1178868A1 (en) * | 1999-04-21 | 2002-02-13 | H-Semitran LLC | Ferrofluidic finishing |
| CN103372806A (en) * | 2012-04-13 | 2013-10-30 | 纳米及先进材料研发院有限公司 | Automatic polishing device for surface finishing of complex-curved-profile parts |
| CN105563328A (en) * | 2016-02-23 | 2016-05-11 | 武汉大学 | Grinding and polishing system and grinding and polishing method based on femtosecond laser robot |
| CN105666287A (en) * | 2016-02-23 | 2016-06-15 | 武汉大学 | Robot grinding and polishing system based on CMP |
| CN105881196A (en) * | 2016-06-08 | 2016-08-24 | 浙江科技学院 | Ultraprecise grinding head device |
-
2017
- 2017-08-02 CN CN201710652981.1A patent/CN107253100A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1178868A1 (en) * | 1999-04-21 | 2002-02-13 | H-Semitran LLC | Ferrofluidic finishing |
| CN103372806A (en) * | 2012-04-13 | 2013-10-30 | 纳米及先进材料研发院有限公司 | Automatic polishing device for surface finishing of complex-curved-profile parts |
| CN105563328A (en) * | 2016-02-23 | 2016-05-11 | 武汉大学 | Grinding and polishing system and grinding and polishing method based on femtosecond laser robot |
| CN105666287A (en) * | 2016-02-23 | 2016-06-15 | 武汉大学 | Robot grinding and polishing system based on CMP |
| CN105881196A (en) * | 2016-06-08 | 2016-08-24 | 浙江科技学院 | Ultraprecise grinding head device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109623516A (en) * | 2018-12-26 | 2019-04-16 | 湖北攀峰钻石科技有限公司 | A kind of diamond segment blade grinding machine |
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Application publication date: 20171017 |